Top cover of silicon carbide horizontal epitaxial furnace and silicon carbide horizontal epitaxial furnace

Abstract

The utility model discloses a silicon carbide horizontal epitaxial furnace top cover and a silicon carbide horizontal epitaxial furnace, the silicon carbide horizontal epitaxial furnace top cover comprises a seat body and a cover body, the seat body and the cover body are detachably connected together in an up-down corresponding mode, and then the seat body can be separated, detached and replaced relative to the cover body. The top cover of the silicon carbide horizontal epitaxial furnace is formed by detachably connecting the base body and the cover body in an up-and-down corresponding mode, in the using process, when silicon carbide crystals are attached to the base body, the top cover can be detached, and a new base body structure is independently replaced, so that the cover body of the arc-shaped vault part is reserved for continuous use, and therefore the service life of the silicon carbide horizontal epitaxial furnace is prolonged. And the replacement and maintenance cost of the top cover is effectively reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon carbide epitaxial furnaces, in particular to a top cover of a silicon carbide horizontal epitaxial furnace and the silicon carbide horizontal epitaxial furnace. Background Art

[0002] During the epitaxial growth, the LPE epitaxial furnace is prone to epitaxial silicon carbide crystals inside its cavity, which can easily cause an increase in epitaxial wafer drop defects, and the dropped objects are likely to fall from the top cover. The epitaxial furnace top cover is always directly above the silicon carbide epitaxial wafer during the epitaxial growth process. During the epitaxial growth process, the silicon carbide crystal attachments will continue to grow thicker, which will increase the probability of silicon carbide epitaxial wafers producing drop defects during the epitaxial growth process, affecting the yield of the finished product. The top cover of the silicon carbide horizontal epitaxial furnace in the prior art is usually as shown in the attached Figure 4 As shown, the top cover of the silicon carbide horizontal epitaxial furnace is an integral structure. When replacement is needed, the entire top cover is replaced. However, during the epitaxial process, the arc-shaped dome portion of the top cover is usually not affected by the adhesion of silicon carbide. Therefore, the arc-shaped dome portion does not actually need to be replaced. However, the existing integral structure of the top cover cannot continue to retain the arc-shaped dome portion for reuse, which results in a high cost for replacing the top cover accessories. Utility Model Content

[0003] In view of the deficiencies in the prior art, the utility model provides a top cover for a silicon carbide horizontal epitaxial furnace, which mainly solves the technical problem that the existing top cover with an integral structure has a high replacement cost.

[0004] To achieve the above-mentioned purpose, the present invention is realized through the following technical solutions:

[0005] A top cover of a silicon carbide horizontal epitaxial furnace comprises a base body and a cover body, wherein the base body and the cover body are detachably connected together at upper and lower positions, so that the base body can be separated, disassembled and replaced relative to the cover body.

[0006] Furthermore, a plug-in detachable connection structure is provided between the mating surfaces of the base body and the cover body so that the base body and the cover body can be detachably connected together.

[0007] Furthermore, the base body and the cover body are configured to be pulled out and disassembled horizontally.

[0008] Furthermore, a plug-in limit groove is provided on the base body, and a plug-in limit protrusion adapted to the plug-in limit groove is provided on the cover body. The plug-in limit cooperation between the plug-in limit protrusion and the plug-in limit groove enables the base body and the cover body to be detachably connected together.

[0009] Furthermore, a plurality of plug-in limit grooves extending along the length direction of the base body are provided on the base body, and a plurality of plug-in limit protrusions corresponding to the plug-in limit grooves are provided on the cover body. The plug-in limit cooperation between the plug-in limit protrusions and the corresponding plug-in limit grooves enables the base body and the cover body to be firmly and detachably connected together.

[0010] Furthermore, three plug-in limiting grooves are evenly distributed on the base body, and three plug-in limiting protrusions are correspondingly arranged on the cover body.

[0011] Furthermore, the seat body is configured to be composed of at least two parts that are spliced together front and back to form a split splicing structure.

[0012] Furthermore, the seat body includes a front section and a rear section that are spliced together front and back.

[0013] Furthermore, the length of the front section is 1 / 3 to 1 / 2 of the total length of the seat body.

[0014] Based on the same inventive concept, the present invention also provides a silicon carbide horizontal epitaxial furnace, including a top cover of any of the above-mentioned silicon carbide horizontal epitaxial furnaces.

[0015] The above technical solution has the following advantages or beneficial effects:

[0016] In the top cover of the silicon carbide horizontal epitaxial furnace and the silicon carbide horizontal epitaxial furnace described in the present invention, the top cover of the silicon carbide horizontal epitaxial furnace is formed by a base body and a cover body that are detachably connected together correspondingly at the upper and lower parts. In this way, during use, when silicon carbide crystals are attached to the base body, the top cover can be removed and replaced with a new base body structure separately, thereby retaining the arc-shaped arch part of the cover body for continued use, thereby effectively reducing the replacement and maintenance costs of the top cover. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural sectional view of the top cover of an embodiment of the present utility model.

[0018] Figure 2 It is a schematic diagram of the three-dimensional structure of the top cover of an embodiment of the utility model.

[0019] Figure 3 This is a diagram of the top cover in use according to an embodiment of the present invention.

[0020] Figure 4 This is a diagram showing the usage status of the top cover of a silicon carbide horizontal epitaxial furnace in the prior art.

[0021] Description of labels:

[0022] 1. Base body, 2. Cover body, 11. Insertion limiting groove, 12. Front section, 13. Rear section, 21. Insertion limiting protrusion. DETAILED DESCRIPTION

[0023] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0024] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "top", "bottom", "inside", "outside", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present invention.

[0025] Please refer to the attached Figure 1 To the attached Figure 3 One embodiment of the utility model provides a top cover of a silicon carbide horizontal epitaxial furnace, comprising a base body 1 and a cover body 2, wherein the base body 1 and the cover body 2 are detachably connected together in correspondence with each other up and down, thereby enabling the base body 1 to be separated, disassembled, and replaced relative to the cover body 2. It can be understood that in this embodiment, the top cover of the silicon carbide horizontal epitaxial furnace is formed by the base body 1 and the cover body 2 being detachably connected together in correspondence with each other up and down. In this way, during use, when silicon carbide crystals are attached to the base body 1, the top cover can be disassembled and replaced with a new base body 1 structure alone, thereby retaining the arc-shaped dome portion of the cover body 2 for continued use, thereby effectively reducing the replacement and maintenance costs of the top cover.

[0026] Please refer to the attached Figure 1 To the attached Figure 3 In one preferred embodiment, a plug-in detachable connection structure is provided between the mating surfaces of the base body 1 and the cover body 2, so that the base body 1 and the cover body 2 are detachably connected together. The base body 1 and the cover body 2 are configured to be pulled out and disassembled horizontally from the horizontal direction. In one preferred embodiment, preferably, a plug-in limit groove 11 is provided on the base body 1, and a plug-in limit protrusion 21 adapted to the plug-in limit groove 11 is provided on the cover body 2. The plug-in limit cooperation between the plug-in limit protrusion 21 and the plug-in limit groove 11 enables the base body 1 and the cover body 2 to be detachably connected together. However, it should be understood by those skilled in the art that in other embodiments, the detachable connection structure between the mating surfaces of the base body 1 and the cover body 2 is not limited to the specific embodiment disclosed in this embodiment, and may also be other existing detachable connection structures, such as mortise and tenon connection structures of other shapes, as long as the base body 1 and the cover body 2 can be stably and detachably connected.

[0027] Please refer to the attached Figure 1 To the attached Figure 3In one preferred embodiment, a plurality of plug-in limit grooves 11 extending along the length of the base body 1 are provided on the base body 1, and a plurality of plug-in limit protrusions 21 are provided on the cover body 2, each corresponding to each plug-in limit groove 11. The plug-in and limit cooperation of each plug-in limit protrusion 21 with each corresponding plug-in limit groove 11 ensures that the base body 1 and the cover body 2 are firmly and detachably connected together. In one preferred embodiment, preferably, three plug-in limit grooves 11 are evenly distributed on the base body 1, and three plug-in limit protrusions 21 are correspondingly provided on the cover body 2. However, it should be understood by those skilled in the art that in other embodiments, other numbers of plug-in limit grooves 11 and corresponding plug-in limit protrusions 21 may be provided between the base body 1 and the cover body 2, as long as a detachable connection between the base body 1 and the cover body 2 can be achieved. Those skilled in the art may specifically set the number and arrangement positions of the plug-in limit grooves 11 and the plug-in limit protrusions 21 according to specific needs.

[0028] Please refer to the attached Figure 1 To the attached Figure 3 In one preferred embodiment, the base body 1 is configured to be composed of at least two parts that are spliced together front to back to form a split splicing structure. In this embodiment, preferably, the base body 1 includes a front section 12 and a rear section 13 that are spliced together front to back. Furthermore, the length of the front section 12 is 1 / 3 to 1 / 2 of the total length of the base body 1. It can be understood that in this embodiment, since the source gas of the silicon carbide horizontal epitaxial furnace is input corresponding to the front end of the top cover, the front end of the base body 1 is more prone to silicon carbide crystal adhesion problems, while the rear end of the base body 1 may not have silicon carbide crystals attached. Therefore, during maintenance, only the front half of the base body 1 can be replaced, and the rear half of the base body 1 can be retained for continued use. In this way, the maintenance cost of the top cover can be further reduced.

[0029] Please refer to the attached Figure 1 To the attached Figure 3 An embodiment of the present invention further provides a silicon carbide horizontal epitaxial furnace, comprising the top cover of the silicon carbide horizontal epitaxial furnace of any of the above embodiments.

[0030] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate from the spirit and scope of the technical solutions of the embodiments of the present invention. Therefore, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present invention.

Claims

1. A top cover of a silicon carbide horizontal epitaxial furnace, characterized in that: The invention comprises a base body (1) and a cover body (2), wherein the base body (1) and the cover body (2) are detachably connected together at the upper and lower parts thereof, so that the base body (1) can be separated, disassembled and replaced relative to the cover body (2); A plug-in detachable connection structure is provided between the mating surfaces of the base body (1) and the cover body (2), so that the base body (1) and the cover body (2) can be detachably connected together; The base body (1) and the cover body (2) are configured to be pulled out and disassembled horizontally; A plug-in limiting groove (11) is provided on the base body (1), and a plug-in limiting protrusion (21) adapted to the plug-in limiting groove (11) is provided on the cover body (2). The plug-in limiting cooperation between the plug-in limiting protrusion (21) and the plug-in limiting groove (11) enables the base body (1) and the cover body (2) to be detachably connected together.

2. The top cover of the silicon carbide horizontal epitaxial furnace according to claim 1, characterized in that: A plurality of plug-in limiting grooves (11) extending along the length direction of the base body (1) are provided on the base body (1), and a plurality of plug-in limiting protrusions (21) respectively arranged corresponding to the plug-in limiting grooves (11) are provided on the cover body (2). The base body (1) and the cover body (2) are stably and detachably connected together by the plug-in limiting cooperation of the plug-in limiting protrusions (21) and the corresponding plug-in limiting grooves (11).

3. The top cover of the silicon carbide horizontal epitaxial furnace according to claim 2, characterized in that: Three plug-in limiting grooves (11) are evenly distributed on the base body (1), and three plug-in limiting protrusions (21) are correspondingly arranged on the cover body (2).

4. The top cover of the silicon carbide horizontal epitaxial furnace according to any one of claims 1 to 3, characterized in that: The seat body (1) is configured to be composed of at least two parts that are spliced together front and back to form a split splicing structure.

5. The top cover of the silicon carbide horizontal epitaxial furnace according to claim 4, characterized in that: The seat body (1) comprises a front section (12) and a rear section (13) which are spliced together front and back.

6. The top cover of the silicon carbide horizontal epitaxial furnace according to claim 5, characterized in that: The length of the front section (12) is 1 / 3 to 1 / 2 of the total length of the seat body (1).

7. A silicon carbide horizontal epitaxial furnace, characterized in that: A top cover of a silicon carbide horizontal epitaxial furnace comprising the top cover of any one of claims 1 to 6.

Images