Ion implantation equipment

Abstract

The present application provides an ion implantation device, comprising: a reaction chamber, the reaction chamber comprising a bottom plate, the bottom plate being provided with a through hole penetrating through the bottom plate; the first slit plate is connected with the outer wall of the bottom plate and covers the through hole, a first slit penetrating through the first slit plate is formed in the first slit plate, and the length-width ratio of the first slit is (73-76): (5.5-6.5); the first slit plate is arranged outside the reaction cavity, the second slit plate is arranged outside the reaction cavity and is opposite to the first slit plate, the second slit plate is provided with a second slit penetrating through the second slit plate, the second slit is opposite to the first slit, the length-width ratio of the second slit is (88-92): (6.5-7.5), and the length-width ratio of the second slit is (88-92): (6.5-7.5). The area of the second slit is larger than that of the first slit, and ions in the reaction cavity are accelerated after passing through the first slit and the second slit in sequence. According to the ion implantation equipment provided by the invention, the utilization rate of ions in the ion implantation process can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to an ion implantation device. Background Art

[0002] In the semiconductor manufacturing process, ion implantation is performed on the surface of the wafer. Specifically, ion implantation is the process of ionizing the atoms of a certain element into charged ions, which are accelerated to a certain energy in a strong electric field and injected into the surface of the wafer to change the physical or chemical properties of the wafer surface.

[0003] In the ion implantation process, the ion source of the ion implantation machine is heated by a filament to form a gas, and then ions are generated by bombarding the gas with thermal electrons. The generated ions are then accelerated by an electric field, analyzed by an analyzing magnetic field, screened by a screening magnetic field, and shaped by a shaping magnetic field before being implanted into the wafer in a set shape.

[0004] During the ion source's ion generation process, the filament in the ion source is heated by electric current to produce thermal electrons. The greater the filament power, the more ions are dissociated. However, excessive power will cause the filament life to drop sharply, increasing the cost of ion implantation. Reducing the filament power will result in too low an ion count, which cannot meet actual process requirements.

[0005] Therefore, an ion implantation device is needed that can improve the utilization rate of ions generated by the ion source during the ion implantation process, thereby improving the ion implantation effect while maintaining the original filament power or maintaining the original ion implantation effect while reducing the filament power. Utility Model Content

[0006] The purpose of this application is to provide an ion implantation device to improve the utilization rate of ions generated by an ion source during the ion implantation process.

[0007] An embodiment of the present application provides an ion implantation device, comprising: a reaction chamber, the reaction chamber comprising a bottom plate, the bottom plate being provided with a through hole penetrating the bottom plate; a first slit plate connected to an outer wall of the bottom plate and covering the through hole, the first slit plate having a first slit penetrating the first slit plate, the aspect ratio of the first slit being (73-76):(5.5-6.5); a second slit plate, the second slit plate being arranged outside the reaction chamber and opposite to the first slit plate, the second slit having a second slit penetrating the second slit plate, the second slit being directly opposite to the first slit, the aspect ratio of the second slit being (88-92):(6.5-7.5), the area of the second slit being larger than the area of the first slit, and the ions in the reaction chamber being accelerated after passing through the first slit and the second slit in sequence.

[0008] In some embodiments, there are multiple second slits.

[0009] In some embodiments, the material of the first slit plate includes tungsten; and the material of the second slit plate includes tungsten.

[0010] In some embodiments, the ion implantation device further includes an acceleration assembly, which is arranged on the side of the second slit plate away from the first slit plate, and the acceleration assembly includes: a first conductive plate, which is in contact with the second slit; a second conductive plate, which matches the first conductive plate, and by applying different voltages to the first conductive plate and the second conductive plate, an accelerating electric field can be formed between the first conductive plate and the second conductive plate to accelerate the ions; and a first conductive block, which is arranged between the first conductive plate and the second conductive plate, and a first channel is provided inside the first conductive block that passes through the first conductive block for allowing the ions to pass through.

[0011] In some embodiments, a second conductive block is further provided on a side of the second conductive plate away from the first conductive plate, a second channel penetrating the second conductive block is provided inside the second conductive block, and the second conductive block is integrally connected to the first conductive block.

[0012] In some embodiments, the length ratio of the second conductive block to the first conductive block is 1:(0.9-1.1).

[0013] In some embodiments, the material of the first conductive block and the second conductive block includes graphite.

[0014] In some embodiments, the first conductive plate is provided with a plurality of first threaded holes, the second conductive plate is provided with a plurality of second threaded holes, the first conductive plate and the second conductive plate are connected by a plurality of insulating connection components, the insulating connection components include a connecting column, a first screw and a second screw, the connecting column is provided between the first conductive plate and the second conductive plate, the end faces of the connecting column are respectively provided with internal threads matching the first screw and the second screw, the first screw passes through the first threaded hole to connect the first conductive plate to the connecting column, and the second screw passes through the second threaded hole to connect the second conductive plate to the connecting column.

[0015] In some embodiments, the ion implantation device further includes an insulating ring, which is sleeved on the outer surface of the first conductive block and arranged between the first conductive plate and the second conductive plate; the insulating ring further includes a plurality of through holes passing through the insulating ring, and the through holes match the connecting column.

[0016] In some embodiments, a filament is provided in the reaction chamber for generating thermal electrons.

[0017] The beneficial effects of the ion implantation apparatus provided by the embodiments of the present application include but are not limited to the following:

[0018] The ion implantation apparatus provided herein adjusts the aspect ratio of the first and second slits to further concentrate the ions leaving the reaction chamber, reducing ion divergence and thereby increasing the number of ions reaching the analytical magnetic unit (AMU), thereby improving the ion implantation effect. Therefore, the ion implantation apparatus provided herein can improve the ion implantation effect without changing the number of ions generated in the reaction chamber. Alternatively, the number of ions generated in the reaction chamber can be reduced while maintaining the original ion implantation effect, i.e., by reducing the power of the filament in the reaction chamber, thereby increasing the service life of the filament.

[0019] In addition, the second conductive block of the present application can prevent the accelerated ions from diverging before reaching the analysis magnetic field unit, thereby increasing the number of ions entering the analysis magnetic field unit and further improving the ion injection effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The following figures describe in detail exemplary embodiments disclosed in this application. Like reference numerals denote similar structures throughout the several views of the drawings. Those skilled in the art will appreciate that these embodiments are non-limiting, exemplary embodiments, and that the drawings are provided for illustration and description purposes only and are not intended to limit the scope of this application. Other embodiments may also achieve the inventive intent of this application. It should be understood that the drawings are not drawn to scale.

[0021] in:

[0022] Figure 1 is a schematic structural diagram of an ion device according to some embodiments of the present application;

[0023] Figure 2 Schematic diagram of the structure of the first slit plate and the reaction chamber according to some embodiments of the present application;

[0024] Figure 3 is a schematic structural diagram of a second slit plate according to some embodiments of the present application; and

[0025] Figure 4 Schematic diagram of the structure of an acceleration component according to some embodiments of the present application. DETAILED DESCRIPTION

[0026] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content of this application. Various local modifications to the disclosed embodiments will be apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of this application. Therefore, this application is not limited to the embodiments shown, but is intended to be of the widest scope consistent with the claims.

[0027] The present application provides an ion implantation device, comprising: a reaction chamber, the reaction chamber comprising a bottom plate, the bottom plate being provided with a through hole; a first slit plate connected to an outer wall of the bottom plate and covering the through hole, the first slit plate having a first slit penetrating the first slit plate, the aspect ratio of the first slit being (73-76):(5.5-6.5); a second slit plate, the second slit plate being arranged outside the reaction chamber and opposite to the first slit plate, the second slit having a second slit penetrating the second slit plate, the second slit being directly opposite to the first slit, the aspect ratio of the second slit being (88-92):(6.5-7.5), and ions in the reaction chamber being accelerated after passing through the first slit and the second slit in sequence.

[0028] The ion implantation apparatus provided herein adjusts the aspect ratio of the first and second slits to further concentrate the ions leaving the reaction chamber, reducing ion divergence and thereby increasing the number of ions reaching the analytical magnetic unit (AMU), thereby improving the ion implantation effect. Therefore, the ion implantation apparatus provided herein can improve the ion implantation effect without changing the number of ions generated in the reaction chamber. Alternatively, the number of ions generated in the reaction chamber can be reduced while maintaining the original ion implantation effect, i.e., by reducing the power of the filament in the reaction chamber, thereby increasing the service life of the filament.

[0029] The ion implantation device provided in this application will be described in detail below with reference to the embodiments and drawings.

[0030] refer to Figure 1 An embodiment of the present application provides an ion implantation device, which includes a reaction chamber 100, a first slit plate 200, a second slit plate 300, and an acceleration assembly 400. The ion beam generated in the reaction chamber 100 passes through the first slit plate 200, the second slit plate 300, and the acceleration assembly 400 in sequence and then reaches the analysis magnetic field unit 500. After undergoing process steps such as analysis, screening, and shaping, it is finally implanted into a wafer.

[0031] In some embodiments, a filament 101 is provided in the reaction chamber 100 for generating thermal electrons. The thermal electrons can bombard the gas in the reaction chamber 100 to generate ions.

[0032] In some embodiments, the reaction chamber 100 includes a bottom plate 102 , and a through hole 102 a is provided on the bottom plate 102 , penetrating the bottom plate 102 . Ions generated in the reaction chamber 100 can leave the reaction chamber 100 through the through hole 102 a .

[0033] In some embodiments, the first slit plate 200 is provided with a first slit 201 penetrating the first slit plate 200 , and ions passing through the through hole pass through the first slit 201 and leave the first slit plate 200 in the form of an ion beam.

[0034] In some embodiments, the aspect ratio of the first slit 201 is (73-76): (5.5-6.5). In some embodiments, the length of the first slit 201 is 73-76 mm; and the width of the first slit 201 is 5.5-6.5 mm. In some embodiments, the length of the first slit 201 can be 73 mm, 75 mm, or 76 mm. In some embodiments, the width of the first slit 201 can be 5.5 mm, 6 mm, or 6.5 mm. While maintaining or increasing the area of the first slit 201, the present application reduces the length of the first slit 201 and increases the width of the first slit 201, so that the ion beam emitted from the first slit 201 is more concentrated, reducing the loss of ions due to divergence when reaching the second slit.

[0035] In some embodiments, the first slit plate 200 is connected to the outer wall of the bottom plate 102 and covers the through hole 102a. An external power supply applies different voltages to the first slit plate 200 and the reaction chamber 100, so that ions in the reaction chamber 100 move from the reaction chamber 100 through the through hole 102a to the first slit plate 200 due to the potential difference.

[0036] In some embodiments, the first slit plate 200 is connected to the base plate 102 by a pin. Specifically, the first slit plate 200 is provided with a plurality of first connection holes 202 passing through the first slit plate 200, and the base plate 102 is provided with a second connection hole (not shown) matching the first connection hole 202. One end of the pin passes through the first connection hole 202 and is placed in the second connection hole, thereby connecting the first slit plate 200 to the base plate 102.

[0037] In some embodiments, there are two first connection holes 202 , which are located at two ends of the first slit plate 200 .

[0038] In some embodiments, the edge of the first slit plate 200 is further provided with a plurality of grooves, which mate with the fixing member 800 provided on the outer wall of the reaction chamber 100. In some embodiments, the fixing member 800 includes a housing 801 fixedly connected to the outer wall of the reaction chamber 100, and a telescopic column 802 located within the housing 801 and movable along the axial direction of the housing 801. When further securing the first slit plate 200 is required, the telescopic column 802 is controlled to extend into the slots to secure the first slit plate 200 along its circumference.

[0039] In some embodiments, the material of the first slit plate 200 includes tungsten.

[0040] In some embodiments, the second slit plate 300 is disposed outside the reaction chamber 100 and opposite to the first slit plate 200 .

[0041] In some embodiments, the second slit plate 300 includes a second slit 301 extending through the second slit plate 300. The second slit 301 is aligned with the first slit 201, and the aspect ratio of the second slit 301 is (88-92):(6.5-7.5). The area of the second slit 301 is greater than that of the first slit 201. In some embodiments, the length of the second slit 301 is 88-92 mm; the length of the second slit 301 is 6.5-7.5 mm. In some embodiments, the length of the second slit 301 can be 88 mm, 90 mm, or 92 mm; the width of the second slit 301 is 6.5 mm, 7 mm, or 7.5 mm. The second slit 301 provided herein matches the first slit 201, and the area of the second slit 301 is greater than that of the first slit 201. The length of the second slit 301 is greater than that of the first slit 201, and the width of the second slit 301 is greater than that of the first slit 201.

[0042] In some embodiments, the number of the second slits 301 is multiple to increase the number of ions from the first slit plate 200 passing through the second slit plate 300 and reduce ion loss during transmission. In some embodiments, the number of the second slits 301 is two, three, or four.

[0043] In some embodiments, the second slit plate 300 further includes a plurality of third connection holes 302 passing through the second slit plate 300, and a connector passes through the third connection holes 302 to connect the second slit plate 300 to the acceleration assembly 400. In some embodiments, the connector includes a pin or a screw.

[0044] In some embodiments, the material of the second slit plate 300 includes tungsten.

[0045] In some embodiments, the ions in the reaction chamber 100 are accelerated after passing through the first slit 201 and the second slit 301 in sequence.

[0046] In some embodiments, the acceleration assembly 400 is disposed on a side of the second slit plate 300 away from the first slit plate 200. Figure 1 and 4 The accelerating component 400 includes a first conductive plate 401, a first conductive block 402 and a second conductive plate 403 arranged in sequence.

[0047] In some embodiments, the first conductive plate 401 contacts the second slit plate 300. In some embodiments, the first conductive plate 401 is provided with a fourth connection hole 401a that matches the third connection hole 302. The connector passes through the third connection hole 302 and extends into the fourth connection hole 401a, connecting the second slit plate 300 to the first conductive plate 401. In some embodiments, the connector comprises a pin or a screw.

[0048] In some embodiments, the first conductive plate 401 is a hollow ring, and the inner diameter of the first conductive plate 401 is adapted to the first conductive block 402, so that the first conductive block 402 is inserted into the first conductive plate 401 and contacts the end face of the second slit plate 300 facing the first conductive plate 401, so that the ions can enter the interior of the first conductive block 402 after passing through the second slit 301.

[0049] In some embodiments, the first conductive plate 401 further includes a fixing portion 401b, and the fixing portion 401b is provided with a fixing connection hole 401c for fixing the first conductive plate 401 to a related component or device (not shown in the figure).

[0050] In some embodiments, the second conductive plate 403 matches the first conductive plate 401 , and by applying different voltages to the first conductive plate 401 and the second conductive plate 403 , an accelerating electric field can be formed between the first conductive plate 401 and the second conductive plate 403 to accelerate the ions.

[0051] In some embodiments, the second conductive plate 403 is in a hollow ring shape, and the inner diameter of the second conductive plate 403 is adapted to the first conductive block 402 .

[0052] In some embodiments, the second conductive plate 403 is connected to the first conductive plate 401 via a plurality of insulating connection components 600. In some embodiments, the insulating connection components 600 include a connecting post 601, a first screw 602, and a second screw 603. The connecting post 601, the first screw 602, and the second screw 603 are electrically insulating.

[0053] In some embodiments, the second conductive plate 403 is provided with a plurality of second threaded holes 403a, the first conductive plate 401 is provided with a plurality of first threaded holes 401a, the end faces of the connecting column 601 are respectively provided with internal threads matching the first screw 602 and the second screw 603, the first screw 602 passes through the first threaded hole 401a to connect the first conductive plate 401 to the connecting column 601, and the second screw 603 passes through the second threaded hole 403a to connect the second conductive plate 403 to the connecting column 601.

[0054] In some embodiments, the first conductive block 402 is provided with a first channel 402 a penetrating the first conductive block for allowing the ions to pass through. The number of the first channels matches the number of the second slits 301 .

[0055] In some embodiments, the first conductive block 402 is sleeved with an insulating ring 700, which is disposed between the first conductive plate 401 and the second conductive plate 403. The insulating ring 700 is provided with a through hole 701 that matches the connecting post 601, and the relative position of the insulating ring 700 and the connecting post 601 remains fixed. In some embodiments, the connecting post 601 is provided with an external thread, and the through hole 701 is provided with an internal thread to achieve a fixed connection between the insulating ring 700 and the connecting post 601.

[0056] In some embodiments, the first conductive block 402 is integrally connected with a connecting portion 402b, and the connecting portion 402b is arranged on a side of the insulating ring 700 away from the first conductive plate 401. The connecting portion 402b is provided with a third threaded hole 402c, and the insulating ring 700 is provided with a fourth threaded hole 702. The third screw 703 passes through the fourth threaded hole 702 and the third threaded hole 402c respectively, thereby achieving a fixed connection between the first conductive block 402 and the insulating ring 700.

[0057] In some embodiments, a second conductive block 404 is further provided on a side of the second conductive plate 403 away from the first conductive plate 401. A second channel (not shown) is provided within the second conductive block 404 and extends through the second conductive block 404. The second channel has the same size and shape as the first channel. The second channel prevents the accelerated ions from dispersing before reaching the analysis magnetic field unit 500, thereby increasing the number of ions entering the analysis magnetic field unit 500.

[0058] In some embodiments, the length ratio of the second conductive block 404 to the first conductive block 402 is 1:(0.9-1.1), such as 1:0.9, 1:1, or 1:1.1. The length of the second conductive block 404 can be adjusted according to the distance between the second conductive plate 403 and the magnetic field analyzing unit 500.

[0059] In some embodiments, the second conductive block 404 is integrally connected to the first conductive block 402 .

[0060] In some embodiments, the material of the first conductive block 402 and the second conductive block 404 is a conductive material. In some embodiments, in some embodiments, the material of the first conductive block 402 and the second conductive block 404 includes graphite.

[0061] The analysis magnetic field unit 500 is well known to those skilled in the art and will not be described in detail here.

[0062] The ion transmission process of the ion implantation device provided in the embodiment of the present application is as follows: the thermal electrons generated by the filament in the reaction chamber 100 bombard the gas in the reaction chamber 100, thereby generating ions. The ions leave the reaction chamber 100 through the first slit 201, enter the second slit 301, and enter the acceleration component 400 through the second slit, and finally leave the acceleration component and enter the analysis magnetic field unit 500 for subsequent processes.

[0063] The beneficial effects of the ion implantation apparatus provided by the embodiments of the present application include but are not limited to the following:

[0064] The ion implantation apparatus provided herein adjusts the aspect ratio of the first and second slits to further concentrate the ions leaving the reaction chamber, reducing ion divergence and thereby increasing the number of ions reaching the analytical magnetic unit (AMU), thereby improving the ion implantation effect. Therefore, the ion implantation apparatus provided herein can improve the ion implantation effect without changing the number of ions generated in the reaction chamber. Alternatively, the number of ions generated in the reaction chamber can be reduced while maintaining the original ion implantation effect, i.e., by reducing the power of the filament in the reaction chamber, thereby increasing the service life of the filament.

[0065] In addition, the second conductive block of the present application can prevent the accelerated ions from diverging before reaching the analysis magnetic field unit, thereby increasing the number of ions entering the analysis magnetic field unit and further improving the ion injection effect.

[0066] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other possible beneficial effects.

[0067] The basic concepts have been described above. It will be apparent to those skilled in the art that the detailed disclosure above is merely illustrative and does not limit this specification. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and revisions to this application. Such modifications, improvements, and revisions are suggested in this specification and remain within the spirit and scope of the exemplary embodiments of this application.

[0068] It should be noted that, in the description of this application, unless otherwise expressly specified or limited, the terms "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections, electrical connections; rotational connections, or sliding connections; direct connections, or indirect connections through an intermediate medium; and can refer to internal communication between two components or the interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application in light of specific circumstances.

[0069] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.

[0070] In addition, this specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or perspective views. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as limited to the shapes of the regions shown herein, but should include deviations in shapes due to, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.

[0071] At the same time, this application uses specific terms to describe the embodiments of this specification. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a certain feature, structure, or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment," "an embodiment," or "an alternative embodiment" mentioned twice or multiple times in different locations in this application does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the present application may be appropriately combined.

[0072] Similarly, it should be noted that, in order to simplify the presentation of this application and thus facilitate understanding of one or more embodiments of the invention, the foregoing descriptions of the embodiments of this application sometimes combine multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not mean that the subject matter of this application requires more features than those recited in the claims. In fact, an embodiment may have fewer features than all of the features of a single embodiment disclosed above.

[0073] Finally, it should be understood that the embodiments described in this application are merely illustrative of the principles of the embodiments of this application. Other variations may also fall within the scope of this application. Therefore, by way of example and not limitation, alternative configurations of the embodiments of this application may be considered consistent with the teachings of this application. Accordingly, the embodiments of this application are not limited to the embodiments explicitly introduced and described in this application.

Claims

1. An ion implantation device, characterized in that: include: A reaction chamber, the reaction chamber comprising a bottom plate, the bottom plate being provided with a through hole penetrating the bottom plate; a first slit plate connected to the outer wall of the bottom plate and covering the through hole, wherein the first slit plate has a first slit running through the first slit plate, and the aspect ratio of the first slit is (73-76):(5.5-6.5); as well as A second slit plate is arranged outside the reaction chamber and opposite to the first slit plate. The second slit plate has a second slit running through the second slit plate. The second slit is directly opposite to the first slit. The aspect ratio of the second slit is (88-92): (6.5-7.5). The area of the second slit is larger than that of the first slit. The ions in the reaction chamber are accelerated after passing through the first slit and the second slit in sequence.

2. The ion implantation apparatus according to claim 1, wherein The number of the second slits is plural.

3. The ion implantation apparatus according to claim 1, wherein A material of the first slit plate includes tungsten; and a material of the second slit plate includes tungsten.

4. The ion implantation apparatus according to claim 1, wherein: The invention also includes an acceleration component, which is arranged on a side of the second slit plate away from the first slit plate, and the acceleration component includes: a first conductive plate, wherein the first conductive plate is in contact with the second slit; a second conductive plate, matched with the first conductive plate, and capable of forming an accelerating electric field between the first conductive plate and the second conductive plate by applying different voltages to the first conductive plate and the second conductive plate, so as to accelerate the ions; and The first conductive block is arranged between the first conductive plate and the second conductive plate. A first channel penetrating the first conductive block is arranged inside the first conductive block for allowing the ions to pass through.

5. The ion implantation apparatus according to claim 4, wherein: A second conductive block is further provided on a side of the second conductive plate away from the first conductive plate. A second channel penetrating the second conductive block is provided inside the second conductive block, and the second conductive block is integrally connected to the first conductive block.

6. The ion implantation apparatus according to claim 5, wherein: The length ratio of the second conductive block to the first conductive block is 1:(0.9-1.1).

7. The ion implantation apparatus according to claim 5, wherein: The material of the first conductive block and the second conductive block includes graphite.

8. The ion implantation apparatus according to claim 4, wherein: The first conductive plate is provided with a plurality of first threaded holes, and the second conductive plate is provided with a plurality of second threaded holes. The first conductive plate and the second conductive plate are connected by a plurality of insulating connection components, and the insulating connection components include a connecting column, a first screw and a second screw. The connecting column is provided between the first conductive plate and the second conductive plate, and the end faces of the connecting column are respectively provided with internal threads matching the first screw and the second screw. The first screw passes through the first threaded hole to connect the first conductive plate to the connecting column, and the second screw passes through the second threaded hole to connect the second conductive plate to the connecting column.

9. The ion implantation apparatus according to claim 8, wherein: It also includes an insulating ring, which is sleeved on the outer surface of the first conductive block and arranged between the first conductive plate and the second conductive plate; the insulating ring also includes a plurality of through holes passing through the insulating ring, and the through holes match the connecting pillars.

10. The ion implantation apparatus according to claim 1, wherein: A filament is provided in the reaction chamber for generating thermal electrons.

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