Ultrahigh-purity silicon carbide chemical vapor deposition equipment

Abstract

The utility model relates to ultra-pure silicon carbide chemical vapor deposition equipment, which belongs to the technical field of silicon carbide processing and comprises a support plate, the top of the support plate is detachably connected with a reaction chamber, and a placement structure is arranged on the support plate; the placing structure comprises a connecting plate arranged on the outer wall of the reaction chamber, the bottom of the connecting plate is fixedly connected with an electric telescopic rod, and the fixed end of the electric telescopic rod is fixedly connected with the supporting plate. When the device needs to be used, the reaction chamber can move downwards through the electric telescopic rod, the placement plate and related parts of the placement plate can be exposed through downward movement of the reaction chamber, at the moment, a worker can place a base material on the placement plate, the base material is clamped through the spring and the clamping plate, and the device is started for deposition; the motor drives the rotating rod and the placing plate to rotate, and the placing plate rotates to drive the base material to rotate slowly, so that the condition of defect formation or non-uniform deposition is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon carbide processing, in particular to ultra-high purity silicon carbide chemical vapor deposition equipment. Background Art

[0002] As a typical representative of the third-generation semiconductor materials, silicon carbide occupies a pivotal position in the modern semiconductor industry due to its excellent physical and chemical properties. It has advantages such as wide bandgap, high electron saturation migration velocity, and high thermal conductivity, which enable semiconductor devices based on silicon carbide to operate stably in extreme environments such as high temperature, high pressure, and high frequency.

[0003] Ultra-high-purity silicon carbide chemical vapor deposition equipment usually includes multiple components such as a reaction chamber, a heater and temperature controller, and a gas supply system. When in use, a substrate is usually placed inside the reaction chamber to achieve ultra-high-purity silicon carbide chemical vapor deposition. The placement of the substrate usually goes through multiple steps, such as precise positioning, avoiding contamination, and temperature control. The substrate is usually placed by workers by hand. However, during the substrate placement process, if the reaction chamber is high, the workers usually use special clamps or brackets to achieve this. When the clamp is clamping the substrate, if the worker's hands shake, it may cause damage to the substrate, resulting in defects in the substrate during ultra-high-purity silicon carbide chemical vapor deposition, resulting in product scrapping;

[0004] To solve the above problems, this application proposes an ultra-high purity silicon carbide chemical vapor deposition device. Utility Model Content

[0005] The utility model aims to solve the technical problems existing in the prior art and provides an ultra-high purity silicon carbide chemical vapor deposition device.

[0006] The technical solution of the utility model for solving the above-mentioned technical problems is as follows: An ultra-high purity silicon carbide chemical vapor deposition device comprises a support plate, the top of the support plate is detachably connected to a reaction chamber, and a placement structure is provided on the support plate; the placement structure comprises a connecting plate provided on the outer wall of the reaction chamber, the bottom of the connecting plate is fixedly connected to an electric telescopic rod, the fixed end of the electric telescopic rod is fixedly connected to the support plate, the bottom of the electric telescopic rod is fixedly connected to a base, a connecting bar is fixedly connected to the base, a motor is provided on the connecting bar, a rotating shaft of the motor is provided with a rotating rod, the top of the rotating rod is fixedly connected to the placement plate, the placement plate is located inside the reaction chamber, the top of the placement plate is fixedly connected to a spring, one end of the spring is fixedly connected to a clamping plate, and the clamping plate is slidably connected to the placement plate.

[0007] A sealing structure is provided at the bottom of the support plate, and the sealing structure includes a rotating ring rotatably connected to the bottom of the support plate, a first sealing gasket is fixedly connected to the top of the rotating ring, and a second sealing gasket is fixedly connected to the rotating rod. One side of the second sealing gasket is in contact with one side of the first sealing gasket. By providing the sealing structure, the rotating part of the rotating rod, the support plate and the reaction chamber is sealed to avoid air leakage at the rotating connection between the support plate and the reaction chamber.

[0008] A groove is provided inside the reaction chamber, and a sealing ring is fixedly connected to the bottom of the placement plate. The sealing ring fits in the groove provided in the reaction chamber. By providing the groove and the sealing ring, the joint between the placement plate and the interior of the reaction chamber is sealed to prevent gas from flowing out through the joint between the placement plate and the reaction chamber.

[0009] The bottom of the sealing ring is rotatably connected to a ball, and the outer wall of the ball fits in the groove opened in the reaction chamber. By providing the ball, the friction at the fitting point between the sealing ring and the groove opened in the reaction chamber is reduced, avoiding wear and tear to produce debris that affects the deposition effect.

[0010] A telescopic plate is fixedly connected to the top of the placement plate, and one end of the telescopic plate is fixedly connected to one side of the clamping plate. By providing the telescopic plate, the spring is protected to avoid affecting the clamping effect of the clamping plate on the substrate.

[0011] An insert block is fixedly connected to the top of the motor's rotating shaft, and a slot is provided at the bottom of the rotating rod. The insert block and the slot provided on the rotating rod are engaged with each other. By providing the slot and the insert block, the motor and the rotating rod can be separated and merged, thereby preventing impurities from adhering to the placement plate and related components and affecting subsequent use.

[0012] The beneficial effects of the utility model are:

[0013] When the device needs to be used, the reaction chamber can be moved downward by the electric telescopic rod. The downward movement of the reaction chamber will cause the placement plate and its related components to leak out. At this time, the staff can place the substrate on the placement plate and clamp it with the spring and clamping plate, and start the device for deposition. When started, the motor drives the rotating rod and the placement plate to rotate, and the rotation of the placement plate drives the substrate to rotate slowly, thereby avoiding the formation of defects or uneven deposition.

[0014] By setting up a sealing structure, the sealing of the rotating rod, the support plate and the reaction chamber is achieved. When the device is in use, the second sealing gasket and the first sealing gasket fit tightly together. At this time, the second sealing gasket rotates under the rotation of the rotating rod. At the same time, the second sealing gasket will drive the first sealing gasket and the rotating ring to rotate, thereby avoiding air leakage at the rotating connection between the support plate and the reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This utility model is a schematic diagram showing the overall structure and related parts;

[0016] Figure 2 This utility model is a schematic diagram showing the placement plate structure and its related parts;

[0017] Figure 3 This is a schematic diagram showing the rotating ring structure and its related parts of the present invention.

[0018] In the accompanying drawings, the components represented by the reference numerals are as follows:

[0019] 1. Support plate; 2. Reaction chamber;

[0020] 3. Placement structure; 301. Connecting plate; 302. Electric telescopic rod; 303. Base; 304. Connecting bar; 305. Motor; 306. Rotating rod; 307. Placement plate; 308. Spring; 309. Clamping plate;

[0021] 4. Sealing structure; 401. Rotating ring; 402. First sealing gasket; 403. Second sealing gasket;

[0022] 5. Groove; 6. Sealing ring; 7. Ball; 8. Slot; 9. Telescopic plate; 10. Insert. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0024] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the described features. In the description of this application, "plurality" means two or more, unless otherwise specifically specified.

[0025] In the description of this application, the term "for example" is used to mean "used as an example, illustration or explanation". Any embodiment described as "for example" in this application is not necessarily to be construed as being more preferred or advantageous than other embodiments. In order to enable any person skilled in the art to implement and use the present invention, the following description is given. In the following description, details are listed for the purpose of explanation. It should be understood that a person of ordinary skill in the art can recognize that the present invention can be implemented without using these specific details. In other examples, well-known structures and processes will not be elaborated in detail to avoid obscuring the description of the present invention with unnecessary details. Therefore, the present invention is not intended to be limited to the embodiments shown, but is consistent with the widest scope consistent with the principles and features disclosed in this application.

[0026] Reference Figure 1-3 , an ultra-high purity silicon carbide chemical vapor deposition equipment, including a support plate 1, the top of the support plate 1 is detachably connected to a reaction chamber 2, the reaction chamber 2 is used to realize ultra-high purity silicon carbide chemical vapor deposition, and a placement structure 3 is provided on the support plate 1; the placement structure 3 is used to facilitate the staff to place the substrate and realize the rotation of the substrate at the same time, the placement structure 3 includes a connecting plate 301 provided on the outer wall of the reaction chamber 2, the bottom of the connecting plate 301 is fixedly connected to an electric telescopic rod 302, the connecting plate 301 is used to connect the reaction chamber 2 and the electric telescopic rod 302, and the reaction chamber 2 is lifted and lowered by the electric telescopic rod 302, the fixed end of the electric telescopic rod 302 is fixedly connected to the support plate 1, the bottom of the electric telescopic rod 302 is fixedly connected to a base 303, the base 303 is used to support the connecting plate 301, and the base 303 is fixedly connected to a connecting bar 304. A motor 305 is provided on the connecting bar 304. The connecting bar 304 is used to connect the motor 305 and the base 303 together, and at the same time fix the motor 305. The rotating shaft of the motor 305 is provided with a rotating rod 306. The motor 305 is used to realize the rotation of the rotating rod 306. The top of the rotating rod 306 is fixedly connected to a placing plate 307. The rotation of the rotating rod 306 can drive the placing plate 307 to rotate. The placing plate 307 is located inside the reaction chamber 2. The placing plate 307 is used to place the substrate. The top of the placing plate 307 is fixedly connected to a spring 308. One end of the spring 308 is fixedly connected to a clamping plate 309. The clamping plate 309 is slidably connected to the placing plate 307. The cooperation of the spring 308 and the clamping plate 309 can simply clamp the substrate, so as to avoid the substrate from shaking during rotation.

[0027] Reference Figure 2 and Figure 3A sealing structure 4 is provided at the bottom of the support plate 1. The sealing structure 4 includes a rotating ring 401 rotatably connected to the bottom of the support plate 1. A first sealing gasket 402 is fixedly connected to the top of the rotating ring 401. The rotating ring 401 is used to realize the connection of the first sealing gasket 402 and realize the rotation of the first sealing gasket 402. A second sealing gasket 403 is fixedly connected to the rotating rod 306. One side of the second sealing gasket 403 is in contact with one side of the first sealing gasket 402. Through the combination of the second sealing gasket 403 and the rotating ring 401, the sealing of the rotating part of the support plate 1 and the reaction chamber 2 is realized, thereby avoiding air leakage at the rotating connection between the support plate 1 and the reaction chamber 2.

[0028] Reference Figure 3 A groove 5 is provided inside the reaction chamber 2, and a sealing ring 6 is fixedly connected to the bottom of the placement plate 307. The sealing ring 6 fits in the groove 5 provided in the reaction chamber 2. The combined use of the groove 5 and the sealing ring 6 can achieve sealing at the joint between the placement plate 307 and the inside of the reaction chamber 2, thereby preventing gas from flowing out through the joint between the placement plate 307 and the reaction chamber 2.

[0029] Reference Figure 3 The bottom of the sealing ring 6 is rotatably connected to a ball 7, and the outer wall of the ball 7 fits in with the groove 5 opened in the reaction chamber 2. The ball 7 is used to reduce the friction at the fitting point between the sealing ring 6 and the groove 5 opened in the reaction chamber 2. By reducing the friction, severe wear at the fitting point between the sealing ring 6 and the reaction chamber 2 is avoided, thereby avoiding the wear and tear that causes debris to affect the deposition effect.

[0030] Reference Figure 2 A telescopic plate 9 is fixedly connected to the top of the placement plate 307, and one end of the telescopic plate 9 is fixedly connected to one side of the clamping plate 309. The telescopic plate 9 is used to protect the spring 308 to prevent the spring 308 from being affected by the deposition gas inside the reaction chamber 2, which makes it difficult to compress or stretch, thereby avoiding affecting the clamping effect of the clamping plate 309 on the substrate.

[0031] Reference Figure 1 and Figure 2 The top of the rotating shaft of the motor 305 is fixedly connected with an insert block 10, and a slot 8 is provided at the bottom of the rotating rod 306. The insert block 10 and the slot 8 provided on the rotating rod 306 are engaged with each other. The coordinated use of the slot 8 and the insert block 10 can realize the separation and merging of the motor 305 and the rotating rod 306, thereby realizing the disassembly and cleaning of the placement plate 307 and its related components, thereby avoiding impurities adhering to the placement plate 307 and its related components and affecting subsequent use.

[0032] Working principle:

[0033] When ultra-high-purity silicon carbide chemical vapor deposition equipment needs to perform ultra-high-purity silicon carbide chemical vapor deposition, the staff extends and retracts the electric telescopic rod 302 to move the reaction chamber 2 and the support plate 1 downward. After the reaction chamber 2 is lowered, the placement plate 307 and its related components will leak out. At this time, the staff places the substrate on the placement plate 307 and simply clamps the substrate with the spring 308 and the clamping plate 309 to prevent the substrate from shaking. After the substrate is placed, the staff starts the device to perform ultra-high-purity silicon carbide chemical vapor deposition. During the deposition process, the staff starts the motor 305, so that the motor 305 drives the rotating rod 306 and the placement plate 307 to rotate, thereby driving the substrate to rotate slowly through the rotation of the placement plate 307, thereby avoiding the formation of defects or uneven deposition. At the same time, the rotation of the rotating rod 306 also drives the first sealing gasket 402 and the rotating ring 401 to rotate, thereby preventing air leakage at the rotating connection between the support plate 1 and the reaction chamber 2 through the rotation of the first sealing gasket 402 and the rotating ring 401.

[0034] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0035] Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and variations fall within the scope of the claims of the present invention and their equivalents, the present invention is intended to include such modifications and variations.

Claims

1. An ultra-high purity silicon carbide chemical vapor deposition device, comprising a support plate (1), the top of which is detachably connected to a reaction chamber (2), and a placement structure (3) provided on the support plate (1), characterized in that: The placement structure (3) includes a connecting plate (301) provided on the outer wall of the reaction chamber (2), the bottom of the connecting plate (301) is fixedly connected to an electric telescopic rod (302), the fixed end of the electric telescopic rod (302) is fixedly connected to the support plate (1), the bottom of the electric telescopic rod (302) is fixedly connected to a base (303), the base (303) is fixedly connected to a connecting bar (304), a motor (305) is provided on the connecting bar (304), the rotating shaft of the motor (305) is provided with a rotating rod (306), the top of the rotating rod (306) is fixedly connected to a placement plate (307), the placement plate (307) is located inside the reaction chamber (2), the top of the placement plate (307) is fixedly connected to a spring (308), one end of the spring (308) is fixedly connected to a clamping plate (309), and the clamping plate (309) is slidably connected to the placement plate (307).

2. The ultra-high purity silicon carbide chemical vapor deposition equipment according to claim 1, characterized in that: A sealing structure (4) is provided at the bottom of the support plate (1), and the sealing structure (4) comprises a rotating ring (401) rotatably connected to the bottom of the support plate (1), a first sealing gasket (402) is fixedly connected to the top of the rotating ring (401), and a second sealing gasket (403) is fixedly connected to the rotating rod (306), and one side of the second sealing gasket (403) is in contact with one side of the first sealing gasket (402).

3. The ultra-high purity silicon carbide chemical vapor deposition equipment according to claim 1, characterized in that: A groove (5) is provided inside the reaction chamber (2), and a sealing ring (6) is fixedly connected to the bottom of the placement plate (307), and the sealing ring (6) fits in the groove (5) provided in the reaction chamber (2).

4. The ultra-high purity silicon carbide chemical vapor deposition equipment according to claim 3, characterized in that: The bottom of the sealing ring (6) is rotatably connected to a ball (7), and the outer wall of the ball (7) is fitted with a groove (5) provided in the reaction chamber (2).

5. The ultra-high purity silicon carbide chemical vapor deposition equipment according to claim 1, characterized in that: The top of the placement plate (307) is fixedly connected to a telescopic plate (9), and one end of the telescopic plate (9) is fixedly connected to one side of the clamping plate (309).

6. The ultra-high purity silicon carbide chemical vapor deposition equipment according to claim 1, characterized in that: The top of the rotating shaft of the motor (305) is fixedly connected with an insert block (10), the bottom of the rotating rod (306) is provided with a slot (8), and the insert block (10) and the slot (8) provided on the rotating rod (306) are mutually engaged.

Images