Wafer cleaning device

Abstract

The utility model discloses a wafer cleaning device, which comprises a measuring assembly for measuring initial measurement parameters and actual measurement parameters of a reference wafer; the reference assembly is used for measuring an initial ranging parameter, and measuring an actual ranging parameter of the reference wafer when the reference wafer is tripped into the groove of the driven wheel and meets a ranging condition; the adjusting assembly adjusts the relative position of the driving supporting structure according to the actual insertion amount to enable the actual insertion amount to meet a preset threshold value; the driving support structure is used for vertically supporting and driving the wafer to rotate; and the cleaning brush scrubs the front and back surfaces of the wafer. The wafer cleaning device can accurately measure the depth of the wafer falling into the groove of the driven wheel, and the position of the driven wheel is adjusted by obtaining the insertion depth of the reference wafer and according to the preset threshold value of the insertion amount, so that the to-be-cleaned wafer of the same type as the reference wafer can be exactly inserted into the groove of the driven wheel, the rotating speed is not influenced, and the wafer cleaning efficiency is improved. And the cleaning effect of the wafer is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of wafer cleaning, in particular to a wafer cleaning device. Background Art

[0002] The integrated circuit industry is the core of the information technology industry and plays a key role in promoting the transformation and upgrading of the manufacturing industry towards digitalization and intelligentization. Chips are the carriers of integrated circuits. Chip manufacturing involves chip design, wafer fabrication, wafer processing, electrical measurement, cutting, packaging, and testing.

[0003] Wafer cleaning is a critical step in the chip manufacturing process, primarily used to remove contaminants and impurities from the wafer surface to ensure the quality and reliability of subsequent processes. Wafers undergo multiple cleanings during the manufacturing process, and the effectiveness of the cleaning process directly impacts the performance and yield of the chip. The purpose of wafer cleaning is to remove particulate matter, organic contaminants, and metal impurities from the wafer surface. There may be tiny particles on the wafer surface. If not removed, these particles may cause defects in the subsequent photolithography and etching processes, affecting circuit formation. Organic matter such as photoresist residues and grease may affect thin film deposition and etching processes and need to be removed during the cleaning process. Metal ion contamination may occur during the manufacturing process, and metal impurities may cause the electrical performance of the device to degrade and need to be removed during cleaning.

[0004] Wet cleaning is the most common cleaning method, which involves cleaning the wafer with a chemical solution. During the wet cleaning process, wafer clamping typically involves mechanical clamping, rotating roller brush clamping, contactless clamping, and adsorption clamping. Roller brush cleaning is the most widely used method, but it also presents some problems. For example, in existing vertical cleaning chambers, wafers vary in thickness, with specifications ranging from 0.75mm, 0.85mm, and 1.00mm. There are machining errors in the thickness of wafers of various specifications, and each wafer needs to be inserted to a certain depth into the driven wheel groove to drive the driven wheel to rotate through friction. However, the amount of wafer inserted into the driven wheel groove cannot remain constant. When the wafer is inserted too deeply into the driven wheel wafer positioning groove, it affects the actual rotational speed of the wafer. When inserted too shallowly, the speed measurement fails. Therefore, the amount of wafer inserted into the driven wheel plays an important role in the design of the shaft system and the stable operation of the speed measurement shaft system. However, the existing technology cannot ensure that the insertion amount of the wafer in the driven wheel remains constant; in addition, when the wafer enters the cleaning chamber, the wafer may tilt, resulting in a virtual contact between the wafer and the driving wheel, affecting the speed measurement accuracy. Utility Model Content

[0005] Therefore, the purpose of the present invention is to solve the problem of wafers being inserted too deep or too shallow in the prior art, and to provide a wafer cleaning device comprising:

[0006] A measurement component, used to measure an initial measurement parameter F1 and an actual measurement parameter F2 of a reference wafer;

[0007] The reference assembly measures the initial distance measurement parameters when the reference wafer maintains the reference state; and measures the actual distance measurement parameters of the reference wafer when the reference wafer is lowered into the wafer positioning groove of the driven wheel and the distance measurement conditions are met;

[0008] An adjustment component adjusts the relative position of the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold;

[0009] Drive support structure, vertically support and drive the reference wafer or wafer to be cleaned to rotate;

[0010] Cleaning brush, used to clean the front and back sides of the wafer to be cleaned.

[0011] Further preferably, the measurement assembly includes a measurement frame, a displacement platform, a floating joint, a reference wafer clamping plate and a first sensor connected in sequence;

[0012] The measuring frame is detachably mounted on the cleaning box. When measuring the initial measurement parameter F1 of the reference wafer, the measuring frame is inverted; when measuring the actual measurement parameter F2, the measuring frame is mounted on the cleaning box.

[0013] The displacement platform is used to slowly adjust the distance of the reference wafer into the driven wheel wafer positioning groove to meet the distance measurement conditions.

[0014] Further preferably, the ranging condition is that when the value collected by the first sensor is the difference F2-F1 between the actual measurement parameter and the initial measurement parameter, the actual ranging parameter of the reference wafer is obtained.

[0015] Further preferably, the reference component includes:

[0016] A reference block is used to keep the reference wafer vertical and without flipping;

[0017] The distance measuring device obtains the distance from the calibration point to the tangent point between the lower edge of the reference wafer and the reference block as the initial distance measurement parameter.

[0018] Further preferably, the distance measuring device is fixed to a calibration point of the reference wafer via a fixing block.

[0019] Further preferably, an orientation block is provided below the distance measuring device, and the orientation block is installed at a specific position of the reference wafer. When the clamped reference wafer is slowly lowered vertically, the orientation block sinks into the auxiliary detection groove of the driven wheel to obtain the actual measurement parameter F2 of the reference wafer at this time.

[0020] Further preferably, the adjustment component includes:

[0021] Three-wheel mounting plate for mounting two driving wheels and adjusting the platform;

[0022] The adjusting platform is used for installing the driven wheel and adjusting the position of the driven wheel.

[0023] Further preferably, the orientation block is a U-shaped structure, and the opening of the U-shaped structure is fixed toward the reference wafer to enclose and form a closed opening; the distance measuring device transmits a signal downward through the closed opening.

[0024] Further preferably, the orientation block is provided with a protrusion, which is arranged below the orientation block; the shape and size of the protrusion match the shape and size of the auxiliary detection groove of the driven wheel.

[0025] Further preferably, the orientation block is made of polyvinyl chloride.

[0026] The wafer cleaning device disclosed in this application has at least the following advantages over the prior art:

[0027] The present invention can accurately measure the depth of the wafer inserted into the wafer positioning groove of the driven wheel by using a measuring component and a reference component in combination. By obtaining the insertion depth of the reference wafer, the position of the driven wheel is adjusted according to a preset threshold of the insertion amount, so that the wafer to be cleaned of the same type as the reference wafer can be exactly inserted into the wafer positioning groove of the driven wheel. If the insertion amount of the wafer in the driven wheel wafer positioning groove is inaccurate, it may cause the rotation speed deviation of the wafer during the cleaning process, thereby affecting the cleaning effect. By obtaining the initial measurement parameters and actual distance measurement parameters of the reference wafer and the reference wafer, the present application can accurately calculate the actual insertion amount of the wafer, ensure the consistency and accuracy of the insertion depth; avoid the situation where the wafer is inserted too deep or too shallow, help maintain a stable rotation speed of the wafer during the cleaning process, and thus improve the uniformity and thoroughness of the wafer surface cleaning. This is crucial for ensuring that there are no residual particles, inorganic pollutants and metal impurities on the wafer surface, thereby ensuring the quality of subsequent processes such as photolithography and etching.

[0028] When measuring the depth of the wafer inserted into the wafer positioning groove of the driven wheel, the present application calculates the difference between the tensile and pressure readings of the wafer measured twice as an important condition for determining whether to measure the distance. This is more accurate than observation based on experience, and can ensure that the depth of the wafer inserted will not be too shallow, affecting the cleaning effect, nor too deep, affecting the rotation speed.

[0029] This application uses a displacement platform and a floating joint in the process of lowering the wafer, which can effectively reduce the adverse effects of the wafer tilting in the cleaning chamber, such as virtual contact with a certain drive wheel. By precisely controlling the clamping and insertion process of the reference wafer, good contact between the wafer and the drive wheel is ensured, avoiding the occurrence of virtual contact. This not only helps to improve the speed control accuracy of the wafer, but also improves the overall stability and reliability of the cleaning process, reducing quality fluctuations caused by unstable equipment operation.

[0030] Due to the processing errors in the thickness of wafers of different specifications, these errors can easily lead to inconsistent cleaning effects during the cleaning process, thereby affecting the performance of different wafers. This application can effectively eliminate the differences in cleaning effects caused by thickness errors by measuring and correcting the actual insertion amount of the reference wafer; ensuring the same insertion depth and cleaning status of each wafer during the cleaning process can significantly improve the yield rate of the product. This is of great advantage for manufacturing high-quality, stable performance chip products. In addition, the consistent cleaning process also reduces the variability in subsequent process steps, further improving the reliability of the overall manufacturing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of a reference assembly in a wafer cleaning device provided in one embodiment of the present invention.

[0032] Figure 2 A schematic diagram of a measurement component in a wafer cleaning device according to an embodiment of the present invention.

[0033] Figure 3 A schematic diagram of an adjustment component in a wafer cleaning device provided in one embodiment of the present invention.

[0034] Figure 4 A schematic diagram of a wafer cleaning device provided in one embodiment of the present invention;

[0035] Figure 5 A schematic diagram of an orienting block sinking into an auxiliary detection groove provided by an embodiment of the present utility model.

[0036] In the picture:

[0037] 1-reference wafer; 2-reference block; 3-sensor fixing block; 4-distance measuring device; 5-anti-tilt fixing block; 101-measuring frame; 102-displacement platform; 103-floating joint; 104-first sensor; 105-reference wafer clamping plate; 106-driving wheel gasket; 107-driving wheel; 108-orientation block; 109-wafer positioning groove; 110-driven wheel; 111-cleaning box; 112-cleaning brush; 113-three-wheel mounting plate; 114-adjustment platform; 115-detection auxiliary groove. DETAILED DESCRIPTION

[0038] The present invention will be further described in detail below through the accompanying drawings and specific implementation methods.

[0039] Figures 1 to 5 1 is a schematic diagram of a wafer cleaning device provided by an embodiment of the present invention, which includes:

[0040] The measurement component is used to measure the initial measurement parameter F1 and the actual measurement parameter F2 of the reference wafer 1; wherein, Figure 1 As shown, the measurement component includes a measurement frame 101, a displacement platform 102, a floating joint 103, a reference wafer clamp 105 and a first sensor 104 connected in sequence; wherein the first sensor 104 is a tension pressure sensor. When measuring the initial measurement parameter F1 of the reference wafer 1, the reference wafer 1 is clamped by the reference wafer clamp 105 and placed on the tension pressure sensor. At this time, the measurement frame 101 is inverted and the bottom is flat, which is convenient for placement. At this time, the reading of the tension pressure sensor is the deadweight F1 of the wafer clamp and the reference wafer.

[0041] When obtaining the actual measurement parameter F2, the measuring rack 101 is fixed on the side wall of the cleaning box, and the reading F2 of the tension pressure sensor is read. The reading of the tension pressure sensor at this time is the combined force of the gravity of the wafer clamp and the reference wafer and the pressure of the measuring rack.

[0042] The distance from the displacement platform 102 to the reference wafer 1 entering the wafer positioning groove 109 is adjusted to meet the distance measurement condition.

[0043] The distance measurement condition is that when the value collected by the first sensor 104 is the difference F2-F1 between the actual measurement parameter and the initial measurement parameter, the actual distance measurement parameter of the reference wafer 1 is obtained.

[0044] When adjusting displacement platform 102, after reference wafer 1 is lowered into the groove of driven wheel 110, the upward support force of the driven wheel groove is obtained. If the value collected by first sensor 104 is the difference between the actual measured parameter and the initial measured parameter, it means that the support force of the driven wheel groove is now equal to the weight of the wafer itself. This ensures that the wafer is lowered neither too shallowly, which would affect the cleaning effect, nor too deep, which would affect the rotation speed.

[0045] The reference assembly measures the initial distance measurement parameters when the reference wafer 1 maintains the reference state; when the reference wafer 1 is lowered into the wafer positioning groove 109 of the driven wheel 110 and the distance measurement conditions are met, the actual distance measurement parameters of the reference wafer 1 are measured;

[0046] like Figure 2As shown, the reference assembly includes a reference block 2, which is used to maintain the reference wafer 1 vertically and without tilting; a distance measuring device 4, which obtains the distance from the calibration point to the tangent point between the reference wafer 1 and the lower edge of the reference block 2 as the initial distance measurement parameter. It also includes an anti-tilt fixing block 5, which is used to mount the reference wafer 1 within the reference block 2 to maintain its vertical position without tilting or flipping. The reference block 2 has grooves on both sides with a width of 0.75mm and a depth of 1-3mm. This ensures that the sensor light is vertical and without tilting. At this time, the laser distance sensor reading L1 is read. The distance measuring device is fixed to the calibration point of the reference wafer via a fixing block.

[0047] The design of the reference assembly ensures that the reference wafer remains upright, without flipping, ensuring the accuracy of the initial distance measurement parameters. This precise distance measurement allows the device to better control the wafer's insertion depth, avoiding poor cleaning results caused by wafer tilt or position deviation, and further improving cleaning uniformity and reliability.

[0048] An orientation block 108 is positioned below the distance measuring device. It is mounted at a specific position on the reference wafer. When the reference wafer is slowly lowered vertically, the orientation block 108 sinks into the auxiliary detection groove 115 of the driven wheel 110, acquiring the actual measurement parameter F2 of the reference wafer. When measuring the actual measurement parameter F2, the protrusion of the orientation block extends into the groove of the driven wheel and slowly descends as the displacement platform moves downward. Orientation block 108 has a self-balancing function, preventing the reference wafer from tilting left or right, ensuring that the signal transmitted by the laser sensor 4 is directed vertically downward. That is, adjust the manual displacement stage (recommended step unit 0.01mm) to make the tooling slowly descend vertically. Due to the setting of the floating joint, the tooling wafer can be prevented from contacting the single-sided driving wheel during the descent process. During the descent process, the tooling wafer first contacts the driven wheel dyeing washer and inserts into the gap, and the laser falls on the outer edge of the driven wheel dyeing washer; then it contacts the two driving wheel washers at the same time. At this time, the pull-pressure sensor reading decreases, and the tooling wafer is continuously lowered, pressing down the two driving wheel washers, causing them to produce flexible deformation and continuously insert into the groove of the driven wheel dyeing washer. When the pull-pressure sensor reading is equal to F2-F1, the descent stops. This process is equivalent to the robot arm placing the wafer and the actual wafer sliding into the groove of the driven wheel washer by its own weight; at this time, the laser sensor reading L2 is read, and the actual insertion amount is |L2-L1|.

[0049] It should be noted that the orientation block 108 is a U-shaped structure, and the opening of the U-shaped structure is fixed toward the reference wafer to enclose and form a closed opening ( Figure 5 The ranging device 4 transmits a signal downward through the closed opening to obtain distance information.

[0050] Furthermore, the orientation block 108 is provided with a protrusion, which is arranged below the orientation block; specifically, the shape and size of the protrusion match the shape and size of the driven wheel detection auxiliary groove to ensure that the positioning block 108 is smoothly inserted into the wafer positioning groove 109.

[0051] In some embodiments, the orientation block 108 is made of polyvinyl chloride. Specifically, the orientation block 108 is made of engineering plastic rather than metal to prevent the negative impact of metal ions on wafer cleaning. As an aspect of this embodiment, the orientation block 108 is constructed of a different material than the driven wheel 110 to prevent adhesion caused by reciprocating motion of the same material. This extends the service life of the orientation block 108 and ensures accurate wafer insertion depth measurement.

[0052] Orientation block 108 helps ensure accurate insertion depth. When measuring the actual measurement parameter F2, the orientation block 108 extends through its protruding portion into the groove of the driven wheel and slowly descends as the displacement platform moves downward. This design ensures that the wafer insertion depth meets the measurement requirements, avoiding excessive or shallow insertion, improving control accuracy during the cleaning process, and reducing the occurrence of errors.

[0053] When the distance measurement conditions are met, the actual distance measurement parameters of the reference wafer 1 are measured; see Figure 4 At this time, the laser sensor landing point should be at the upper edge of the driven wheel groove. The laser landing point can easily reflect and receive the displayed reading L2. The difference between the readings L2 and L1 is the actual insertion depth of the wafer in the wafer positioning groove 109.

[0054] The adjustment component adjusts the relative position of the driving support structure according to the actual insertion amount so that the actual insertion amount meets the preset threshold; Figure 3 As shown, the adjustment assembly includes: a three-wheel mounting plate 113 for mounting two driving wheels and an adjustment platform; an adjustment platform 114 for mounting a driven wheel 110 and adjusting the position of the driven wheel 110 .

[0055] Drive support structure, vertically support and drive the reference wafer or wafer to be cleaned to rotate;

[0056] The cleaning brush 112 is used to clean the front and back surfaces of the wafer to be cleaned.

[0057] The design of the adjustment assembly provides the cleaning system with excellent dynamic adjustment capabilities. The relative position of the drive support structure is adjusted based on the actual insertion volume, ensuring that the actual insertion volume meets the preset threshold. This flexible adjustment function allows the cleaning system to adapt to wafers of varying thicknesses and specifications, enhancing the system's applicability and process flexibility to meet diverse production needs.

[0058] After measurement by the above-mentioned measuring device, the position of the driven wheel is adjusted according to the measurement result. When a wafer of the same model as the reference wafer needs to be cleaned, the wafer to be cleaned is directly placed on the driving support assembly and the front and back sides are cleaned using a cleaning brush.

[0059] The device integrates multiple measurement and adjustment functions with a high degree of automation. Through precise measurement and automatic adjustment, the operator only needs to perform simple operations to complete the cleaning process, greatly reducing reliance on manual operation, reducing human errors, and improving the automation level and efficiency of the production line.

[0060] It should be noted that when using a reference wafer for wafer insertion depth measurement, the wafers are not cleaned. If an abnormal wafer insertion depth is detected during a single measurement of the same batch of wafers, an alert is issued, allowing on-site process personnel to adjust the tachometer wheel (driven wheel). Wafer insertion depth measurements can be performed regularly during field use.

[0061] During the wafer cleaning process, the insertion depth of the wafer is crucial to the cleaning effect. If the insertion amount of the wafer in the driven wheel groove is inaccurate, it may cause the wafer rotation speed to deviate during the cleaning process, thereby affecting the cleaning effect. By obtaining the initial measurement parameters and actual distance measurement parameters of the reference wafer and the reference wafer, the actual insertion amount of the wafer can be accurately calculated to ensure the consistency and accuracy of the insertion depth. This precise insertion control avoids the situation where the wafer is inserted too deep or too shallow, helps to maintain a stable rotation speed of the wafer during the cleaning process, and thus improves the uniformity and thoroughness of the wafer surface cleaning. This is crucial to ensure that there are no residual particles, inorganic pollutants and metal impurities on the wafer surface, thereby ensuring the quality of subsequent processes such as photolithography and etching.

[0062] When wafers enter the cleaning chamber, thickness variations or improper mechanical clamping can cause them to tilt or make contact with the drive wheel. These issues not only affect the actual cleaning performance but can also lead to inaccurate speed measurements, thus affecting the stability of the entire cleaning process. By measuring and correcting the actual insertion depth of the reference wafer, variations in cleaning performance caused by thickness errors can be effectively eliminated. This ensures that every wafer is inserted to the same depth and cleansing conditions during the cleaning process, significantly improving product yield. This is a significant advantage for manufacturing high-quality, stable-performance chip products.

[0063] In traditional wafer cleaning processes, operators need to adjust the wafer insertion depth based on experience, which is time-consuming and error-prone. However, through precise measurement and automated correction, this application makes this process simpler and more efficient.

[0064] The following is a brief description of the general steps of wafer insertion depth measurement mentioned in the present invention:

[0065] S1, placing a reference wafer of the same model as the wafer to be cleaned on the measurement assembly and the reference assembly respectively, and obtaining the initial measurement parameter F1 and initial distance measurement parameter of the reference wafer;

[0066] In S1, obtaining initial measurement parameters of the reference wafer includes the following steps:

[0067] The reference wafer is clamped on the measurement component, and the measurement component is turned upside down, and the reading of the sensor is recorded as the initial measurement parameter of the reference wafer.

[0068] Further preferably, the method further includes obtaining the distance from the calibration point on the reference wafer to the frame of the reference component as an initial distance measurement parameter, including:

[0069] Install the reference wafer in the reference block of the reference assembly, keeping the reference wafer vertical and without flipping;

[0070] Place the distance measuring device at the calibration point of the reference wafer, and obtain the distance from the calibration point to the tangent point between the reference wafer and the lower edge of the reference block as the initial distance measurement parameter.

[0071] Specifically, the process involves first mounting the laser rangefinder sensor 4 on the sensor fixing block 3, then securing the sensor fixing block 3 to the reference wafer 1. Finally, the reference wafer 1 is connected to the anti-tilt fixing block 5 and placed on the reference block 2. Positioning pins and screws are used to secure the laser rangefinder 4 to the sensor fixing block 3, the sensor fixing block 3 to the reference wafer 1, the reference wafer 1 to the anti-tilt fixing block 5, and the anti-tilt fixing block 5 to the reference block 2, ensuring that the laser falls vertically onto the reference block 2 without deviation or rotation. Furthermore, a groove is machined into the inner wall of the reference block 2 to allow the reference wafer 1 to slide in and limit its forward and backward movement. The laser rangefinder reading, L1, is then read.

[0072] It should also be noted that a groove is provided on the reference wafer clamping plate 105 with a width of 0.8 to 1.5 mm and a depth of 1 to 3 mm to facilitate the placement of the wafer to be tested / reference wafer; the material of the reference wafer clamping plate 105 should be a high-cleanliness material, such as PPS / PEEK;

[0073] S2, use the measuring assembly to clamp the reference wafer, install the orientation block 108 at a specific position of the reference wafer, clamp the reference wafer vertically and slowly lower it, and the orientation block 108 sinks into the detection auxiliary groove 115 of the driven wheel 110 ( Figure 5 ), obtaining the actual measurement parameter F2 of the reference wafer at this time;

[0074] When obtaining the actual measurement parameter F2 of the reference wafer, it includes:

[0075] The distance measuring device (including the laser distance measuring sensor 4 and the sensor fixing block 3) is installed on the reference wafer 1 through positioning pins and bolts, and the orientation block 108 is installed on the lower end of the tooling wafer through positioning pins and bolts. At the same time, the reference wafer 1 is installed and connected to the reference wafer clamp 105 through positioning pins and bolts; then the measuring frame 101, the displacement platform 102, the floating joint 103, the tension and pressure sensor 104, and the reference wafer clamp 105 are connected through fasteners, and then the measuring frame 101 is fixed to the cleaning box using positioning pins and bolts to ensure that the entire device is located in the center of the box without offset.

[0076] like Figure 5 As shown, at this time, the reference wafer has no contact with the driving wheel gasket 106 and the driven wheel 110, and the orientation block 108 sinks into the detection auxiliary groove 115 of the driven wheel 110. The two are clearance-matched, and a single-side clearance of 0.5 to 1.0 mm is recommended to prevent the driven wheel from rotating during the measurement and affecting the data. At this time, read the pull pressure sensor reading F2 (tooling weight).

[0077] S3, when the reference wafer contacts the wafer positioning groove 109 of the driven wheel, it contacts the driving wheel 107 synchronously, and continues to lower the reference wafer, causing the driving wheel washer 106 to produce flexible deformation. When the measurement parameter shows the difference F2-F1 between the actual measurement parameter F2 and the initial measurement parameter F1, the lowering stops;

[0078] During this process, ensure that the protrusion of the orientation block 108 extends into the auxiliary detection groove 115 of the driven wheel 110, adjust the displacement platform 102, and slowly move the reference wafer 1 downward. The floating joint 103 can effectively reduce the adverse effects of the reference wafer 1 tilting, such as virtual contact with a certain drive wheel washer 106. This movement process moves the reference wafer 1 vertically downward, and is equivalent to the wafer descending within the chamber.

[0079] When the reading of the pull pressure sensor 104 is equal to F2-F1, the reference wafer 1 stops descending. This state is equivalent to the end of the wafer being placed in the wafer positioning groove 109 of the dyeing driven wheel; the displacement platform 102 is made of non-metal. If coarse adjustment devices such as screws are used, the reference wafer 1 will produce slight vibration and tilt during the downward movement, and it is easy to produce adverse effects such as metal debris contaminating the box 111.

[0080] S4, obtaining actual distance measurement parameters of the reference wafer, and calculating the actual insertion amount according to the actual distance measurement parameters and the initial distance measurement parameters;

[0081] The method further includes S5 , adjusting the relative position of the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold.

[0082] Furthermore, this approach effectively reduces errors caused by improper manual operation through measurement and feedback mechanisms. This not only shortens operation time and reduces the frequency of equipment commissioning, but also reduces dependence on operator skill, ultimately improving overall production efficiency. Furthermore, the simplified operating process helps reduce human error, improves equipment operational stability, and enhances the consistency of cleaning results.

[0083] Obviously, the above embodiments are merely examples for clarity of explanation and are not intended to limit the implementation methods. Those skilled in the art will readily appreciate that other variations or modifications based on the above descriptions are possible. It is not necessary and impossible to enumerate all implementation methods here. Obvious variations or modifications arising therefrom remain within the scope of protection of the present invention.

Claims

1. A wafer cleaning device, characterized in that: include: A measurement component, used for measuring an initial measurement parameter F1 and an actual measurement parameter F2 of a reference wafer; a reference assembly for measuring initial ranging parameters while the reference wafer maintains a reference state; When the reference wafer is lowered into the groove of the driven wheel and the distance measurement condition is met, the actual distance measurement parameters of the reference wafer are measured; An adjustment component adjusts the relative position of the driving support structure according to the actual insertion amount so that the actual insertion amount meets a preset threshold; Drive support structure, vertically support and drive the wafer to be cleaned to rotate; Cleaning brush, used to clean the front and back sides of the wafer to be cleaned.

2. The wafer cleaning device according to claim 1, wherein: The measurement assembly includes a measurement frame, a displacement platform, a floating joint, a reference wafer clamping plate and a first sensor connected in sequence; The measuring frame is detachably mounted on the cleaning box, and when measuring the initial measurement parameter F1 of the reference wafer, the measuring frame is inverted; When measuring the actual measurement parameter F2, the measuring frame is installed in the cleaning box; The displacement platform is used to slowly adjust the distance that the reference wafer is lowered into the groove of the driven wheel to meet the distance measurement conditions.

3. The wafer cleaning device according to claim 1 or 2, characterized in that: The distance measurement condition is to obtain the actual distance measurement parameter of the reference wafer when the value collected by the first sensor is the difference between the actual measurement parameter and the initial measurement parameter.

4. The wafer cleaning device according to claim 1 or 2, characterized in that: The benchmark components include: A reference block is used to keep the reference wafer vertical and without flipping; The distance measuring device obtains the distance from the calibration point to the tangent point between the lower edge of the reference wafer and the reference block as the initial distance measurement parameter.

5. The wafer cleaning device according to claim 4, characterized in that: The distance measuring device is fixed to a calibration point of the reference wafer through a sensor fixing block.

6. The wafer cleaning device according to claim 4, characterized in that: An orientation block is provided below the distance measuring device and is installed at a specific position of the reference wafer. When the reference wafer is clamped and slowly lowered vertically, the orientation block sinks into the auxiliary detection groove of the driven wheel, and the actual measurement parameter F2 of the reference wafer at this time is obtained.

7. The wafer cleaning device according to claim 1 or 2, characterized in that: The adjustment component includes: Three-wheel mounting plate for mounting two driving wheels and adjusting the platform; The adjusting platform is used for installing the driven wheel and adjusting the position of the driven wheel.

8. The wafer cleaning device according to claim 6, wherein: The orientation block is a U-shaped structure, and the opening of the U-shaped structure is fixed toward the reference wafer to enclose and form a closed opening; the distance measuring device transmits a signal downward through the closed opening.

9. The wafer cleaning device according to claim 8, characterized in that: The orientation block is provided with a protrusion, which is arranged below the orientation block; the shape and size of the protrusion match the shape and size of the auxiliary groove for detection of the driven wheel.

10. The wafer cleaning device according to claim 8, wherein: The orientation block is made of polyvinyl chloride.

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