Semiconductor etching equipment
By introducing adjustment rings and driving components into the semiconductor etching equipment, the problems of etching asymmetry and etching morphology are solved, and the etching uniformity and morphology are improved, and the etching performance is improved.
Patent Information
- Application Number
- CN202422475669.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-12
- Publication Date
- 2025-08-22
- Estimated Expiration
- 2034-10-12
AI Technical Summary
There are problems of etching asymmetry and etching morphology offset in the existing plasma etching process. The etching performance is poor, making it difficult to achieve uniformity of film etching and vertical morphology of high-deep and aspect ratio etching.
The adjustment ring and driving assembly are introduced in the semiconductor etching equipment. The plasma sheath and radical concentration distribution are changed by the movement of the adjustment ring, and the sealing assembly is combined to ensure airtightness, improve etch uniformity and etch morphology.
The etching uniformity and etching morphology are improved, the etching performance is improved, and the process requirements of semiconductor devices are met.
Smart Images
Figure CN223260558U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor etching device. Background Art
[0002] Etching technology is a technology that selectively corrodes or strips the surface of a substrate (such as a wafer) or the thin film covering the surface according to the mask pattern or design requirements in the semiconductor manufacturing process. It is not only a basic manufacturing process for semiconductor devices and integrated circuits, but also used in the processing of thin film circuits, printed circuits and other fine patterns.
[0003] Etching technology includes plasma etching process. In the plasma etching process, different process gas combinations (such as C x F y , O2 and Ar and other gases) are excited by radio frequency to form plasma in a radio frequency environment. Under the action of the electric field of the first electrode and the second electrode of the reaction chamber, the formed plasma undergoes physical bombardment and chemical reaction with the surface of the substrate to be processed, completing the processing of the designed pattern and key process of the substrate surface to be processed.
[0004] However, the above plasma etching process has problems of etching asymmetry and / or etching morphology deviation, resulting in poor etching performance. Utility Model Content
[0005] An embodiment of the present application provides a semiconductor etching device for improving etching performance.
[0006] An embodiment of the present application provides a semiconductor etching device, comprising: a first electrode, a second electrode, a backplate, and a plasma adjustment device, wherein the first electrode and the second electrode are arranged opposite to each other along a first direction, the backplate is provided on a side of the second electrode facing away from the first electrode, and a substrate to be processed is supported on the first electrode;
[0007] The plasma adjustment device includes an adjustment ring, a drive assembly, and a sealing assembly. The adjustment ring is sleeved on the outside of the second electrode and is in transmission connection with the drive assembly. The drive assembly drives the adjustment ring to move relative to the back plate along the first direction. The sealing assembly is arranged between the adjustment ring and the back plate.
[0008] In some possible embodiments, a plasma reaction chamber is formed between the first electrode and the second electrode;
[0009] The driving assembly drives the adjustment ring to move relative to the back plate along the first direction to change the plasma distribution at the edge of the reaction chamber.
[0010] In some possible embodiments, the sealing assembly includes a first sealing bellows and a second sealing bellows sleeved on the outside of the first sealing bellows;
[0011] The first sealing bellows and the second sealing bellows are both arranged on a side of the adjustment ring facing the back plate, and the first sealing bellows is connected to the inner ring of the adjustment ring, and the second sealing bellows is connected to the outer ring of the adjustment ring.
[0012] In some possible embodiments, the backplate includes a cooling disk, the drive assembly is arranged on the side of the cooling disk facing the second electrode, one end of the sealing assembly is connected to the adjustment ring, and the other end is connected to the cooling disk and / or the drive assembly.
[0013] In some possible embodiments, a cooling pipe is provided in the cooling disk, and a receiving groove is further provided on the surface of the cooling disk facing the first electrode. The receiving groove is not connected to the cooling pipe, and the driving assembly is installed in the receiving groove.
[0014] In some possible embodiments, the drive assembly includes a lifting rod and a tubular linear motor connected to each other, and the lifting rod is further connected to the adjustment ring;
[0015] And / or, the second electrode is provided with a plurality of gas injection channels, and one end of each of the plurality of gas injection channels extends to the surface of the second electrode facing the first electrode.
[0016] In some possible embodiments, at least three drive assemblies are provided, and the at least three drive assemblies are connected to the adjustment ring at equal intervals in the circumferential direction and are driven synchronously.
[0017] In some possible embodiments, a coating is provided on the surface of the adjustment ring, and a material of the coating includes silicon nitride, silicon, or yttrium oxide.
[0018] In some possible embodiments, the moving distance of the adjustment ring is less than or equal to the height of the adjustment ring;
[0019] When the adjustment ring moves to the first extreme position, the surface of the adjustment ring facing the first electrode is aligned with the surface of the second electrode facing the first electrode; when the adjustment ring moves to the second extreme position, the surface of the adjustment ring facing the first electrode is located on the side of the surface of the second electrode facing the first electrode adjacent to the first electrode.
[0020] In some possible embodiments, the adjustment ring is made of a conductor material or a semiconductor material.
[0021] The semiconductor etching apparatus in the embodiments of the present application includes a first electrode, a second electrode, a backplate, and a plasma control device. The first and second electrodes are arranged relative to each other along a first direction, and a plasma is formed using the first and second electrodes. A backplate is provided on the side of the second electrode facing away from the first electrode, and a substrate to be processed is supported on the first electrode. The plasma control device includes an adjustment ring, a drive assembly, and a sealing assembly. The adjustment ring is positioned outside the second electrode, which reduces the impact on the second electrode. Positioning the adjustment ring at the edge of the second electrode increases its service life. The adjustment ring is also in transmission connection with the drive assembly, which drives the adjustment ring relative to the backplate in the first direction. By adjusting the position of the adjustment ring, the plasma sheath and the distribution of free radical concentration at the center and edge of the substrate to be processed can be adjusted, thereby adjusting the etching uniformity of each film layer, the plasma edge etching behavior, and improving the etched topography deviation at the edge of the substrate to be processed. A sealing assembly is provided between the adjustment ring and the backplate to ensure airtightness and prevent ignition due to plasma leakage. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.
[0023] Figure 1 is a schematic diagram of a plasma adjustment device in an embodiment of the present application;
[0024] Figure 2 is a schematic diagram of a sealing assembly in an embodiment of the present application;
[0025] Figure 3 A top view of the adjustment ring, the sealing assembly, and the drive assembly in an embodiment of the present application;
[0026] Figure 4 Schematic diagram of the adjustment ring rising during the etching process of the organic material layer in an embodiment of the present application;
[0027] Figure 5 for Figure 4 Etching rate diagram of the organic material layer;
[0028] Figure 6 Schematic diagram of the lowering of the adjustment ring during the etching process of the organic material layer in an embodiment of the present application;
[0029] Figure 7 for Figure 6 Etching rate diagram of the organic material layer;
[0030] Figure 8 Schematic diagram of the adjustment ring rising during the dielectric layer etching process in an embodiment of the present application;
[0031] Figure 9 for Figure 8 Etch rate diagram of the middle dielectric layer;
[0032] Figure 10 Schematic diagram of the adjustment ring rising during the dielectric layer etching process in an embodiment of the present application;
[0033] Figure 11 for Figure 10 Etch rate of the dielectric layer;
[0034] Figure 12 This is a diagram showing the improvement of the etching behavior of the adjustment ring on the edge of the substrate to be processed in an embodiment of the present application;
[0035] Figure 13 This is an adjustment diagram of the plasma sheath distribution by the adjustment ring in the embodiment of the present application;
[0036] Figure 14 Another adjustment diagram of the plasma sheath distribution by the adjustment ring in the embodiment of the present application;
[0037] Figure 15 This is another adjustment diagram of the plasma sheath distribution by the adjustment ring in the embodiment of the present application;
[0038] Figure 16 2 are diagrams of the two extreme positions of the adjustment ring in the embodiment of the present application.
[0039] Description of reference numerals:
[0040] 11- reaction chamber;
[0041] 12-first electrode;
[0042] 13- second electrode;
[0043] 14- cooling plate;
[0044] 15-first sealing bellows;
[0045] 16- second sealing bellows;
[0046] 17-Adjusting ring;
[0047] 18-Drive assembly;
[0048] 20-Substrate to be processed.
[0049] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and the textual description are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of the present application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION
[0050] There are problems of etching asymmetry and / or etching morphology offset in the related technology, and the etching performance is poor. The author of the utility model has found that with the continuous development of semiconductor technology, the line width has gradually shrunk, and the etching film layer structure has become more and more complex. Different film layer structures, different etching conditions, plasma sheaths and free radical concentration distributions are different. In the same reaction chamber, it is difficult to achieve etching uniformity of all film layers, and the etching of each film layer is uneven.
[0051] In high-aspect-ratio etching systems, due to radially non-uniform exhaust, etch byproducts from the center of the substrate are more easily extracted than those from the edges. These byproducts can even be deposited at the edges. As etching progresses, the previously uniform etching behavior is disrupted, and byproducts accumulate at the edges, causing the etch rate at the edges to gradually decrease, resulting in uneven etching between the center and edges.
[0052] During the etching process, as the edge ring on the outside of the lower electrode is consumed, the plasma sheath distribution at the center and edge of the substrate to be processed is different, causing the motion trajectory of the plasma ions at the edge of the substrate to be processed to shift. This is more obvious in high aspect ratio etching systems, and the etching morphology at the edge of the substrate to be processed shifts, making it difficult to meet uniform vertical etching morphology.
[0053] To this end, an embodiment of the present application provides a semiconductor etching device, in which a backplate is provided on the side of the second electrode facing away from the first electrode, and an adjustment ring is sleeved on the outer side of the second electrode, a sealing assembly is provided between the adjustment ring and the backplate, and the adjustment ring is also transmission-connected to the driving assembly, and the driving assembly drives the adjustment ring close to or away from the backplate, thereby adjusting the distribution of the plasma sheath and the free radical concentration at the center and edge of the substrate to be processed, and then adjusting the etching uniformity of each film layer, the plasma edge etching behavior, and improving the etching morphology offset of the edge of the substrate to be processed.
[0054] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present disclosure more obvious and easy to understand, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present disclosure.
[0055] The present invention provides a semiconductor etching device, which is a processing device used to etch a substrate (e.g., a wafer) to be processed to manufacture semiconductor devices. The semiconductor etching device may include a capacitively coupled plasma (CCP) etching device, an inductively coupled plasma (ICP) etching device, and an electron cyclotron resonance (ECR) etching device.
[0056] The semiconductor etching equipment includes a first electrode 12, a second electrode 13, a back plate, and a plasma adjustment device. The plasma adjustment device is used to adjust the volume of plasma used for the substrate to be processed to improve the problem of uneven etching speed and reduce the difference between the maximum and minimum etching speeds, thereby improving the etching uniformity of the substrate to be processed and meeting the process requirements of semiconductor devices.
[0057] See Figures 1 to 4 , the first electrode 12 and the second electrode 13 are arranged opposite to each other along a first direction, and the first direction is a vertical direction ( Figure 1 The first electrode 12 is located below the substrate 20 to be processed and is used to support the substrate 20 to be processed. The second electrode 13 is located above the substrate 20 to be processed, that is, the second electrode 13 is located above the first electrode 12. The second electrode 13 is an upper electrode and the first electrode 12 is a lower electrode.
[0058] A plasma reaction chamber 11 is formed between the first electrode 12 and the second electrode 13. Specifically, the reaction chamber 11 is the space defined by the first electrode 12 and the second electrode 13. A substrate 20 to be processed is located within the reaction chamber 11, and plasma is formed within the reaction chamber 11. An electrostatic chuck (E-Chuck) may also be provided between the first electrode 12 and the substrate 20 to be processed. The electrostatic chuck is used to attract and secure the substrate 20 to be processed.
[0059] The first electrode 12 and the second electrode 13 are configured to inject a reaction gas into the reaction chamber 11, and when a radio frequency signal is applied to the first electrode 12, cause the reaction gas to form a plasma between the second electrode 13 and the first electrode 12. Exemplarily, the first electrode 12 is connected to an input terminal of a radio frequency source to apply the radio frequency signal to the first electrode 12.
[0060] The second electrode 13 is provided with multiple gas injection channels, each of which extends at one end to the surface of the second electrode 13 facing the first electrode 12, forming pores. This configuration allows the second electrode 13 to function as a gas showerhead, injecting reactive gas into the reaction chamber 11 through the gas injection channels. The reactive gas enters between the first electrode 12 and the second electrode 13, where it forms a plasma under the influence of the radio frequency signal. This plasma can then etch the substrate 20 to be processed, located above the first electrode 12. The multiple pores can be evenly distributed across the corresponding surface of the second electrode 13 to improve the uniformity of reactive gas injection.
[0061] A backplate is provided on the side of the second electrode 13 facing away from the first electrode 12, that is, a backplate is provided above the second electrode 13. The backplate can be a cooling component, for example, including a cooling plate 14, which has a cooling pipe provided in the cooling plate 14 for flowing a coolant (e.g., water). In other words, the cooling plate 14 is a water-cooled plate to cool the second electrode 13.
[0062] An adjustment ring 17 is sleeved around the outer side of the second electrode 13. The second electrode 13 serves as the upper electrode, and the first electrode 12 serves as the lower electrode. The electrode area of the second electrode 13 is much larger than that of the first electrode 12, resulting in a lower DC bias voltage for the second electrode 13 than for the first electrode 12. This reduces the impact on the second electrode 13, and the adjustment ring 17, positioned at the edge of the second electrode 13, has a longer service life and lowers relative cost. The inner ring of the adjustment ring 17 matches the shape of the second electrode 13, while the outer ring of the adjustment ring 17 matches the shape of the reaction chamber 11. For example, the adjustment ring 17 is a circular ring.
[0063] In some possible examples, the surfaces of the adjustment ring 17 and the second electrode 13 facing each other are parallel to each other, which facilitates the adjustment ring 17 to move relative to the second electrode 13 and also facilitates the sealing between the adjustment ring 17 and the back plate through the sealing assembly. Figure 1 As shown, the outer circumference of the adjustment ring 17 is parallel to the outer circumference of the second electrode 13 and extends along the first direction. The opposing surfaces of the adjustment ring 17 and the second electrode 13 may also be in contact to ensure airtightness.
[0064] The adjustment ring 17 can have a uniform thickness, that is, the dimensions of the adjustment ring 17 along the first direction are the same. Alternatively, the thickness of the portion of the adjustment ring 17 adjacent to the second electrode 13 is smaller than the thickness of the portion of the adjustment ring 17 distal from the second electrode 13, that is, the inner side of the adjustment ring 17 is thinner and the outer side is thicker. Exemplarily, the portion of the surface of the adjustment ring 17 adjacent to the second electrode 13, which faces the first electrode 12, is inclined toward the second electrode 13, that is, this portion of the surface forms a cone.
[0065] Adjustment ring 17 is made of a conductive material or a semiconductor material. Exemplary conductive materials include aluminum alloys, while semiconductor materials include silicon or silicon carbide. Silicon carbide has a longer service life. Adjustment ring 17 is coated to reduce metal or particulate contamination and increase its service life. The coating is made of silicon nitride, silicon, or yttrium oxide.
[0066] A sealing component is provided between the adjustment ring 17 and the back plate, and the sealing component is used to seal the adjustment ring 17 and the back plate to ensure airtightness and prevent ignition due to plasma leakage. Figure 2 As shown, in some possible implementations, the sealing assembly includes a first sealing bellows 15 and a second sealing bellows 16, and the second sealing bellows 16 is sleeved outside the first sealing bellows 15. For example, the second sealing bellows 16 and the first sealing bellows 15 can be coaxially arranged and can be coaxially arranged with the second electrode 13.
[0067] like Figure 3 As shown, the first sealing bellows 15 and the second sealing bellows 16 are both arranged on the side of the adjustment ring 17 facing the back plate, and the first sealing bellows 15 is connected to the inner ring of the adjustment ring 17, and the second bellows is connected to the outer ring of the adjustment ring 17.
[0068] The inner and outer rings of first and second sealing bellows 15, 16 respectively seal the inner ring of adjustment ring 17 against the back plate, and the outer ring of adjustment ring 17 against the back plate, thereby ensuring airtightness during movement of adjustment ring 17. Both first and second sealing bellows 15, 16 can be made of materials with good thermal conductivity, thereby indirectly controlling the temperature of adjustment ring 17.
[0069] The adjustment ring 17 is in transmission connection with the drive assembly 18, and the drive assembly 18 drives the adjustment ring 17 to move relatively in the first direction, so that the adjustment ring 17 can rise or fall, thereby changing the height of the adjustment ring 17, that is, changing the position of the adjustment ring 17 relative to the second electrode 13, so as to change the plasma distribution at the edge of the reaction chamber 11. Specifically, by changing the position of the adjustment ring 17 relative to the second electrode 13, the distribution of the plasma sheath and the free radical concentration in the reaction chamber 11 can be adjusted, so that the distribution of the plasma at the center and edge of the substrate 20 to be processed is more uniform, thereby adjusting the etching uniformity of each film layer, the plasma edge etching behavior, and slowing down or preventing the etching morphology at the edge of the substrate 20 to be processed from shifting, that is, improving the non-perpendicular morphology of the edge of the substrate 20 to be processed.
[0070] For details, see Figures 4 to 10The etching rate (ER) at the center and edge of the substrate 20 to be processed is mainly related to the distribution of free radicals and plasma sheath. By changing the height of the adjustment ring 17, the etching uniformity of all film layers can be achieved in the same reaction chamber 11 (under the same spacing between the first electrode 12 and the second electrode 13). Figures 4 to 7 As shown, for an organic material layer, such as a photoresist layer (PR), the adjustment ring 17 is raised, that is, the adjustment ring 17 is close to the back plate, which can effectively reduce the free radical concentration at the edge of the substrate 20 to be processed, thereby reducing the etching rate at the edge of the substrate 20 to be processed and improving the etching uniformity. Specifically, before the adjustment ring 17 is raised, as shown in FIG. Figure 5 As shown, the etching rate at the edge of the substrate 20 to be processed is faster than the etching rate at the center; after the adjustment ring 17 rises, the free radical concentration at the edge of the substrate 20 to be processed decreases, as shown in FIG. Figure 7 As shown, the edge etching rate of the substrate 20 to be processed decreases and approaches the center etching rate of the substrate 20 to be processed, and the etching uniformity is improved.
[0071] like Figures 8 to 11 As shown, for a dielectric layer, such as a silicon oxide layer, the adjustment ring 17 is lowered, that is, the adjustment ring 17 is moved away from the back plate, which can enhance the plasma sheath at the edge of the substrate 20 to be processed, thereby enhancing the ion bombardment energy at the edge of the substrate 20 to be processed and improving the etching uniformity. Specifically, before the adjustment ring 17 is lowered, as shown in FIG. Figure 8 As shown, the etching rate of the edge of the substrate 20 to be processed is slower than the etching rate of the center of the substrate 20 to be processed. After the adjustment ring 17 is lowered, the edge bombardment of the substrate 20 to be processed is strengthened, as shown in FIG. Figure 10 As shown, the etching rate at the edge of the substrate 20 to be processed is increased, while the etching rate near the center of the substrate 20 to be processed is improved, and the etching uniformity is improved. At the same time, changing the height of the adjustment ring 17 does not significantly change the flow conductance of the reaction chamber 11, nor does it aggravate the micro-loading effect.
[0072] See Figure 12 By changing the height of the adjustment ring 17, the plasma edge etching behavior can be improved. When the adjustment ring 17 is lowered, the ion bombardment energy at the edge of the substrate 20 to be processed can be increased, thereby expanding the process window and effectively alleviating the problem of reduced etching rate at the edge of the substrate 20 to be processed.
[0073] See Figures 13 to 15 By changing the height of the adjustment ring 17, the plasma sheath distribution can be adjusted, thereby adjusting the plasma motion trajectory of the substrate 20 to be processed and improving the etching morphology of the edge of the substrate 20 to be processed. Figure 13 As shown, the adjustment ring 17 rises, and the deep hole etching morphology at the edge of the substrate 20 to be processed tilts outward. Figure 14As shown, the height of the adjustment ring 17 is appropriate, and the deep hole etching morphology at the edge of the substrate 20 to be processed will not be offset. Figure 15 As shown, the adjustment ring 17 descends, and the deep hole etching morphology at the edge of the substrate 20 to be processed tilts inward.
[0074] See Figure 16 , the adjustment ring 17 moves along the first direction, and there are two limit positions, namely the first limit position and the second limit position. Figure 16 As shown at A in the middle, the second limit position is as follows Figure 16 As shown at point B in the figure, the adjustment ring 17 moves between a first limit position and a second limit position. The range between the first limit position and the second limit position represents the adjustable lifting range of the adjustment ring 17. The first limit position is located on the side of the second limit position closer to the back plate, i.e., the first limit position is located above and the second limit position is located below. The second limit position also represents the limit of the drive assembly 18.
[0075] The second extreme position of the adjustment ring 17 can be adjusted to avoid directly exposing the sealing assembly to the plasma. In some possible implementations, the movement distance of the adjustment ring 17 is less than or equal to the height of the adjustment ring 17. When the adjustment ring 17 moves to the first extreme position, the surface of the adjustment ring 17 facing the first electrode 12 is aligned with the surface of the second electrode 13 facing the first electrode 12. When the adjustment ring 17 moves to the second extreme position, the surface of the adjustment ring 17 facing the first electrode 12 is located on the side of the surface of the second electrode 13 facing the first electrode 12 adjacent to the first electrode 12, that is, the surface of the adjustment ring 17 facing the first electrode 12 protrudes relative to the surface of the second electrode 13 facing the first electrode 12. By increasing the height of the adjustment ring 17, the adjustment range can be increased, thereby increasing the window for process control.
[0076] To improve the stability of adjustment ring 17's movement along the first direction, at least three drive assemblies 18 are provided. These at least three drive assemblies 18 are connected to adjustment ring 17 at equal intervals around the circumference and driven synchronously. Thus, at least three drive assemblies 18 are symmetrically distributed around adjustment ring 17. By driving adjustment ring 17 at the same frequency and amplitude, the drive assemblies 18 ensure central symmetry in the movement of adjustment ring 17, preventing circumferential unevenness in etching.
[0077] In some possible implementations, the drive assembly 18 includes a connected lifting rod and a tubular linear motor. The lifting rod is also connected to the adjustment ring 17. The lifting rod is connected to the tubular linear motor, and the tubular linear motor is used to control the lifting and lowering of the lifting rod. The lifting rod is also connected to the adjustment ring 17, thereby controlling the movement of the adjustment ring 17. In other examples, the tubular linear motor can also be replaced with a pneumatic cylinder or a hydraulic cylinder.
[0078] The driving assembly 18 can be fixedly installed in the semiconductor etching equipment so that the adjustment range of the driving assembly 18 is fixed relative to the second electrode 13. For example, the driving assembly 18 can be set on the back plate. In the example where the back plate includes a cooling plate 14, the driving assembly 18 is set on the side of the cooling plate 14 facing the second electrode 13, that is, the driving assembly 18 can be placed in the cooling plate 14 in an embedded manner. One end of the sealing assembly ( Figure 1 The lower end shown) is connected to the adjustment ring 17, and the other end ( Figure 1 The upper end shown in FIG. 1 is connected to the cooling plate 14 and / or the drive assembly 18. The drive assembly 18 is at least partially located above the adjustment ring 17, so that the sealing assembly is connected to the drive assembly 18.
[0079] Specifically, the orthographic projection of the drive assembly 18 on the second electrode 13 partially overlaps with the orthographic projection of the adjustment ring 17 on the second electrode 13. The lower portion of the drive assembly 18 is directly connected to the first and second sealing bellows 15, 16. The lower portions of the first and second sealing bellows 15, 16 are directly connected to the adjustment ring 17. Where the drive assembly 18 is absent, the lower portion of the cooling plate 14 is directly connected to the first and second sealing bellows 15, 16.
[0080] In some possible examples, a receiving groove is provided on the surface of the cooling plate 14 facing the first electrode 12. The receiving groove is not connected to the cooling pipe inside the cooling plate 14, and the drive assembly 18 is installed in the receiving groove. The shape and size of the receiving groove are respectively adapted to the shape and size of the drive assembly 18, so that the drive assembly 18 fills the receiving groove, thereby improving the impact on the airflow in the reaction chamber 11.
[0081] In summary, the semiconductor etching apparatus in the embodiments of the present application includes: a first electrode 12, a second electrode 13, a backplate, and a plasma adjustment device. The first electrode 12 and the second electrode 13 are arranged relative to each other along a first direction, and a backplate is provided on the side of the second electrode 13 facing away from the first electrode 12. The first electrode 12 supports the substrate 20 to be processed, and plasma can be formed using the first and second electrodes 12, 13. The plasma adjustment device includes an adjustment ring 17, a drive assembly 18, and a sealing assembly. The adjustment ring 17 is arranged outside the second electrode 13, which reduces the bombardment on the second electrode 13. The adjustment ring 17 is arranged at the edge of the second electrode 13, which has a longer service life. The adjustment ring 17 is also in transmission connection with the drive assembly 18, which drives the adjustment ring 17 to move relative to the backplate in the first direction. By adjusting the position of the adjustment ring 17, the distribution of plasma at the center and edge of the substrate 20 to be processed can be adjusted, thereby adjusting the etching uniformity of each film layer, the plasma edge etching behavior, and improving the etched morphology deviation at the edge of the substrate 20 to be processed. A sealing component is provided between the adjustment ring 17 and the back plate, and the sealing component is used to seal the adjustment ring 17 and the back plate to ensure airtightness and prevent ignition due to plasma leakage.
[0082] In the description of the embodiments of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to a fixed connection, an indirect connection through an intermediate medium, internal communication between two components, or an interaction between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of this application based on the specific circumstances. The terms "first," "second," "third," "fourth," etc. (if any) are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.
[0083] All directional indications (e.g., up, down, left, right, front, back, etc.) used in the various embodiments of this specification are intended solely to explain the relative positional and motion relationships between components in a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications will also change accordingly. The term "and / or" used throughout this specification encompasses all three parallel options. For example, "A and / or B" encompasses Option A, Option B, or both Option A and Option B.
[0084] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of the present application, rather than to limit them. Although the embodiments of the present application have been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. These modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.
Claims
1. A semiconductor etching device, characterized in that: include: A first electrode, a second electrode, a back plate, and a plasma adjustment device, wherein the first electrode and the second electrode are arranged opposite to each other along a first direction, the back plate is arranged on a side of the second electrode facing away from the first electrode, and a substrate to be processed is carried on the first electrode; The plasma adjustment device includes an adjustment ring, a drive assembly, and a sealing assembly. The adjustment ring is sleeved on the outside of the second electrode and is in transmission connection with the drive assembly. The drive assembly drives the adjustment ring to move relative to the back plate along the first direction. The sealing assembly is arranged between the adjustment ring and the back plate.
2. The semiconductor etching equipment according to claim 1, wherein: A plasma reaction chamber is formed between the first electrode and the second electrode; The driving assembly drives the adjustment ring to move relative to the back plate along the first direction to change the plasma distribution at the edge of the reaction chamber.
3. The semiconductor etching equipment according to claim 1, wherein: The sealing assembly includes a first sealing bellows and a second sealing bellows sleeved on the outside of the first sealing bellows; The first sealing bellows and the second sealing bellows are both arranged on a side of the adjustment ring facing the back plate, and the first sealing bellows is connected to the inner ring of the adjustment ring, and the second sealing bellows is connected to the outer ring of the adjustment ring.
4. The semiconductor etching equipment according to claim 1, wherein: The back plate includes a cooling disk, the driving assembly is arranged on a side of the cooling disk facing the second electrode, one end of the sealing assembly is connected to the adjustment ring, and the other end is connected to the cooling disk and / or the driving assembly.
5. The semiconductor etching equipment according to claim 4, characterized in that: A cooling pipe is provided in the cooling disk. A receiving groove is further provided on the surface of the cooling disk facing the first electrode. The receiving groove is not connected to the cooling pipe, and the driving component is installed in the receiving groove.
6. The semiconductor etching equipment according to claim 1, wherein: The drive assembly includes a lifting rod and a tubular linear motor connected to each other, and the lifting rod is also connected to the adjustment ring; And / or, the second electrode is provided with a plurality of gas injection channels, and one end of each of the plurality of gas injection channels extends to the surface of the second electrode facing the first electrode.
7. The semiconductor etching equipment according to claim 1, wherein: At least three drive assemblies are provided, and the at least three drive assemblies are connected to the adjustment ring at equal intervals in the circumferential direction and are driven synchronously.
8. The semiconductor etching equipment according to any one of claims 1 to 7, characterized in that: The surface of the adjustment ring is provided with a coating, and the material of the coating includes silicon nitride, silicon or yttrium oxide.
9. The semiconductor etching equipment according to any one of claims 1 to 7, characterized in that: The moving distance of the adjusting ring is less than or equal to the height of the adjusting ring; When the adjustment ring moves to the first extreme position, the surface of the adjustment ring facing the first electrode is aligned with the surface of the second electrode facing the first electrode; when the adjustment ring moves to the second extreme position, the surface of the adjustment ring facing the first electrode is located on the side of the surface of the second electrode facing the first electrode adjacent to the first electrode.
10. The semiconductor etching equipment according to any one of claims 1 to 7, characterized in that: The adjusting ring is made of a conductive material or a semiconductor material.