Intelligent power module

Abstract

The utility model provides an intelligent power module, which comprises a control circuit, a rectifying circuit and an inverter circuit, the control circuit is respectively connected with the inverter circuit and the rectifying circuit and is used for controlling the working states of the inverter circuit and the rectifying circuit, and the rectifying circuit is connected with the inverter circuit and is used for receiving external alternating current. External alternating current is converted into direct current, and the direct current is transmitted to the inverter circuit; and the inverter circuit is used for converting the direct current into target alternating current and transmitting the target alternating current to a load connected with the inverter circuit. According to the intelligent power module, the control circuit, the inverter circuit and the rectifying circuit are integrated, so that the circuit size of the intelligent power module is reduced, the functionality of the intelligent power module is enriched, and meanwhile, the space occupied by a system on a PCB is effectively reduced. In addition, due to the fact that an external rectifying circuit and a PFC circuit are omitted, the system is more advantageous in cost, and due to the fact that the length of a circuit path is shortened and stray inductance is reduced, operation of the system is more stable and reliable.

Description

Technical Field

[0001] The utility model relates to the technical field of intelligent power modules, in particular to an intelligent power module. Background Art

[0002] Intelligent Power Modules (IPMs), as intelligent power modules, are widely used in power electronics, playing a key role in driving high-power electrical equipment such as motors, inverters, and frequency converters. They are highly integrated devices that combine multiple power semiconductors, drive circuits, temperature sensors, protection functions, and control logic. The core goal of IPMs is to provide efficient, compact, and reliable solutions for controlling and driving high-power circuits.

[0003] The internal structure of an intelligent power module (IPM) consists of two core components: the inverter circuit and the control circuit. The inverter circuit is composed of power semiconductor devices, which can be flexibly selected and combined according to specific application requirements. The control circuit primarily includes the drive circuit, with built-in temperature sensors, protection functions, and control logic to ensure stable operation under various operating conditions. With its compact internal structure, small form factor, and comprehensive functionality, IPMs have been widely used in various fields, including home appliances, energy systems, and transportation.

[0004] However, currently available intelligent power modules (IPMs) only integrate control and inverter circuits. Using an IPM requires external circuitry to convert AC power to DC, typically involving a rectifier and power factor correction (PFC) circuit. Consequently, IPMs require numerous peripheral circuits, otherwise they will not function properly. This design not only increases system complexity but also occupies a considerable amount of space, contradicting the current trend toward high integration and miniaturization in electronic products. Utility Model Content

[0005] In view of the above problems, the present invention is proposed to provide an intelligent power module that overcomes the above problems or at least partially solves the above problems.

[0006] In order to solve the above problems, the utility model discloses an intelligent power module, comprising: a control circuit, a rectifier circuit and an inverter circuit;

[0007] The control circuit is connected to the inverter circuit and the rectifier circuit respectively, and is used to control the working states of the inverter circuit and the rectifier circuit;

[0008] The rectifier circuit is connected to the inverter circuit, and is configured to receive external AC power, convert the external AC power into DC power, and transmit the DC power to the inverter circuit;

[0009] The inverter circuit is used to convert the direct current into a target alternating current, and transmit the target alternating current to a load connected to the inverter circuit.

[0010] Optionally, the control circuit includes a first control circuit connected to the rectifier circuit; the rectifier circuit includes at least one insulated gate bipolar transistor and a corresponding fast recovery diode; the first control circuit is used to control the at least one insulated gate bipolar transistor and the corresponding fast recovery diode of the rectifier circuit to be turned on or off, so that the rectifier circuit converts the external alternating current into direct current.

[0011] Optionally, the first control circuit includes two upper bridge integrated circuits; the rectifier circuit includes four insulated gate bipolar transistors and corresponding fast recovery diodes; the two upper bridge integrated circuits are respectively connected to the two insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit.

[0012] Optionally, the first control circuit includes two upper bridge integrated circuits; the rectifier circuit includes two insulated gate bipolar transistors and corresponding fast recovery diodes; the two upper bridge integrated circuits are respectively connected to the insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit.

[0013] Optionally, the first control circuit includes an upper bridge integrated circuit; the rectifier circuit includes four insulated gate bipolar transistors and corresponding fast recovery diodes; the upper bridge integrated circuit is connected to the four insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit.

[0014] Optionally, the first control circuit includes an upper bridge integrated circuit; the rectifier circuit includes two insulated gate bipolar transistors and corresponding fast recovery diodes; the upper bridge integrated circuit is connected to the two insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit.

[0015] Optionally, the control circuit also includes a second control circuit connected to the inverter circuit; the inverter circuit includes at least one insulated gate bipolar transistor and a corresponding fast recovery diode; the second control circuit is used to control the at least one insulated gate bipolar transistor and the corresponding fast recovery diode of the inverter circuit to be turned on or off, so that the inverter circuit converts the direct current into the target alternating current.

[0016] Optionally, the second control circuit includes an upper bridge integrated circuit and a lower bridge integrated circuit; the inverter circuit includes six insulated gate bipolar transistors and corresponding fast recovery diodes; the upper bridge integrated circuit and the lower bridge integrated circuit are respectively connected to the three insulated gate bipolar transistors and corresponding fast recovery diodes in the inverter circuit.

[0017] Optionally, the second control circuit includes a full-bridge integrated circuit; the inverter circuit includes six insulated gate bipolar transistors and corresponding fast recovery diodes; the full-bridge integrated circuit is connected to the six insulated gate bipolar transistors and corresponding fast recovery diodes in the inverter circuit.

[0018] Optionally, a bootstrap diode is provided between the input terminals of the upper bridge integrated circuit.

[0019] Optionally, the bootstrap diodes are respectively provided between the logic power input terminal of the upper bridge integrated circuit and the driving high-side driving floating power terminal, the first low-end driving power input terminal and the second low-end driving power input terminal.

[0020] Optionally, the load is a three-phase motor; the three insulated gate bipolar transistors and corresponding fast recovery diodes connected to the upper bridge integrated circuit, and the corresponding three output terminals are connected to the corresponding three input terminals of the three-phase motor.

[0021] The present invention has the following advantages: The intelligent power module of the present invention includes a control circuit, a rectifier circuit, and an inverter circuit. The control circuit is connected to the inverter circuit and the rectifier circuit, respectively, for controlling the operating states of the inverter circuit and the rectifier circuit. The rectifier circuit is connected to the inverter circuit for receiving external AC power, converting the external AC power into DC power, and transmitting the DC power to the inverter circuit. The inverter circuit is configured to convert the DC power into a target AC power and transmit the target AC power to a load connected to the inverter circuit. The intelligent power module of the present invention integrates the control circuit, the inverter circuit, and the rectifier circuit into one device, significantly reducing the circuit size of the intelligent power module, enriching its functionality, and effectively reducing the space occupied by the system on the PCB. Furthermore, by eliminating the external rectifier circuit and PFC circuit, the system has a greater cost advantage. The shortened circuit path length and reduced stray inductance make the system more stable and reliable. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a schematic structural diagram of an intelligent power module according to an embodiment of the present utility model;

[0023] Figure 2 This is a structural diagram of another intelligent power module according to an embodiment of the present utility model;

[0024] Figure 3 This is a schematic diagram of the appearance of an intelligent power module according to an embodiment of the present utility model;

[0025] Figure 4 It is a front view schematic diagram of the internal structure of the intelligent power module according to an embodiment of the present utility model.

[0026] Reference numerals: control circuit 10, first control circuit 11, first upper bridge integrated circuit 111, second upper bridge integrated circuit 112, second control circuit 12, third upper bridge integrated circuit 121, lower bridge integrated circuit 122, rectifier circuit 20, first insulated gate bipolar transistor 21, first fast recovery diode 211, second insulated gate bipolar transistor 22, second fast recovery diode 221, third insulated gate bipolar transistor 23, third fast recovery diode 231, fourth insulated gate bipolar transistor 24, fourth fast recovery diode 241, inverter Variable circuit 30, fifth insulated gate bipolar transistor 31, fifth fast recovery diode 311, sixth insulated gate bipolar transistor 32, sixth fast recovery diode 321, seventh insulated gate bipolar transistor 33, seventh fast recovery diode 331, eighth insulated gate bipolar transistor 34, eighth fast recovery diode 341, ninth insulated gate bipolar transistor 35, ninth fast recovery diode 351, tenth insulated gate bipolar transistor 36, tenth fast recovery diode 361, eleventh fast recovery diode 25, twelfth fast recovery diode 26. DETAILED DESCRIPTION

[0027] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0028] Currently, the intelligent power modules (IPMs) on the market only integrate control and inverter circuits. When using an IPM, AC mains power must be converted to DC via external circuitry, typically involving rectifiers and power factor correction (PFC) circuits. Consequently, IPMs require numerous peripheral circuits, otherwise they will not function properly. This design not only increases system complexity but also occupies considerable space, contradicting the current trend toward high integration and miniaturization in electronic products.

[0029] A key concept of this utility model is the integration of control, inverter, and rectifier circuits. This significantly reduces the size of the intelligent power module, enriches its functionality, and effectively reduces the system's footprint on the PCB. Furthermore, by eliminating the external rectifier and PFC circuits, the system offers significant cost advantages. The shortened circuit path and reduced stray inductance ensure more stable and reliable operation.

[0030] Reference Figure 1 , shows a schematic structural diagram of an intelligent power module according to an embodiment of the present utility model. The intelligent power module 01 may specifically include: a control circuit 10, a rectifier circuit 20 and an inverter circuit 30.

[0031] The control circuit 10 is connected to the rectifier circuit 20 and the inverter circuit 30 respectively, and is used to control the working states of the rectifier circuit 20 and the inverter circuit 30 .

[0032] The control circuit 10 is responsible for managing and controlling the operation of the entire power module. It receives commands from an external controller, such as PWM (pulse-width modulation) signals, which determine the switching state of the power devices. It converts these signals into signals suitable for driving the power devices, ensuring they switch as intended. It monitors the module's operating status, such as current, voltage, and temperature, and takes protective measures when anomalies are detected, such as shutting down the power devices to prevent damage. It also includes a communication interface with external controllers or other systems for data exchange and status monitoring. The control circuit is typically implemented using a microcontroller, digital logic circuit, or application-specific integrated circuit (ASIC), capable of quickly responding and processing complex control algorithms.

[0033] The rectifier circuit 20 is connected to the inverter circuit 30 and is configured to receive external AC power, convert the external AC power into DC power, and transmit the DC power to the inverter circuit 30 .

[0034] In existing technology, the rectifier and PFC circuits are typically located at the front end of an intelligent power module. The rectifier circuit's primary function is to convert alternating current (AC) into direct current (DC), providing stable DC power for the subsequent inverter circuit or power module. The power factor correction (PFC) circuit's primary purpose is to improve the power factor and reduce the harmonic content of the input current, thereby increasing power efficiency and reducing grid pollution. The rectifier and PFC circuits work closely together within the power supply system to ensure the quality and efficiency of the input power. The rectifier circuit converts AC to DC, while the PFC circuit further optimizes the input current waveform and improves the power factor. This collaborative work ensures efficient and stable operation of the power supply system and provides high-quality DC power for the subsequent intelligent power module.

[0035] The rectifier circuit 20 of the embodiment of the present invention has the functions of the rectifier circuit and the PFC circuit in the prior art, and integrates the rectifier circuit and the PFC circuit, and is used to receive external AC power, illustratively, receive mains power supply, which refers to the power supply provided by the public power grid, usually referring to the AC power obtained by household, commercial and industrial users from local power companies, and then converts the external AC power into DC power, and transmits the DC power to the inverter circuit 30.

[0036] The inverter circuit 30 is configured to convert direct current into target alternating current, and transmit the target alternating current to a load connected to the inverter circuit 30 .

[0037] The inverter circuit 30 includes power semiconductor devices, such as IGBTs or MOSFETs. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device that combines the advantages of a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and a BJT (Bipolar Junction Transistor). IGBTs have high input impedance (similar to a MOSFET) and low on-state voltage drop (similar to a BJT) and are widely used in high-voltage, high-current power control applications. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a widely used semiconductor device primarily used for switching and amplification in electronic circuits. MOSFETs are key components in modern electronic devices, particularly in power electronics, microprocessors, memory, and other integrated circuits. These devices serve as switches in the inverter circuit 30, responsible for converting between direct current and alternating current. The operating principle of the inverter circuit 30 is to convert direct current into alternating current with a specific frequency and amplitude by controlling the switching state of the power semiconductor devices. This process is usually achieved through PWM technology, that is, controlling the output voltage waveform by adjusting the on and off time of the switching device.

[0038] The intelligent power module of the present invention includes a control circuit, a rectifier circuit, and an inverter circuit. The control circuit is connected to the inverter circuit and the rectifier circuit, respectively, for controlling the operating states of the inverter circuit and the rectifier circuit. The rectifier circuit is connected to the inverter circuit for receiving external AC power, converting the external AC power into DC power, and transmitting the DC power to the inverter circuit. The inverter circuit is configured to convert the DC power into a target AC power and transmit the target AC power to a load connected to the inverter circuit. The intelligent power module of the present invention integrates the control circuit, the inverter circuit, and the rectifier circuit into one, significantly reducing the circuit size of the intelligent power module and enriching its functionality while effectively reducing the space occupied by the system on the PCB board. In addition, since the external rectifier circuit and PFC circuit are omitted, the system has a greater cost advantage. The shortened circuit path length and reduced stray inductance make the system more stable and reliable.

[0039] Reference Figure 2 , shows a schematic structural diagram of another intelligent power module according to an embodiment of the present utility model, which may specifically include the following:

[0040] The control circuit 10 includes a first control circuit 11 connected to the rectifier circuit 20; the rectifier circuit 20 includes at least one insulated gate bipolar transistor and a corresponding fast recovery diode; the first control circuit 11 is used to control the at least one insulated gate bipolar transistor and the corresponding fast recovery diode of the rectifier circuit 20 to be turned on or off, so that the rectifier circuit converts external alternating current into direct current.

[0041] In the embodiment of the present invention, the first control circuit 11 includes two upper bridge integrated circuits: a first upper bridge integrated circuit 111 and a second upper bridge integrated circuit 112 .

[0042] The rectifier circuit 20 includes four insulated gate bipolar transistors and corresponding fast recovery diodes: a first insulated gate bipolar transistor 21 and a first fast recovery diode 211 connected in series with the first insulated gate bipolar transistor 21, a second insulated gate bipolar transistor 22 and a second fast recovery diode 221 connected in series with the second insulated gate bipolar transistor 22, a third insulated gate bipolar transistor 23 and a third fast recovery diode 231 connected in series with the third insulated gate bipolar transistor 23, and a fourth insulated gate bipolar transistor 24 and a fourth fast recovery diode 241 connected in series with the fourth insulated gate bipolar transistor 24.

[0043] The rectifier circuit 20 also includes two fast recovery diodes: an eleventh fast recovery diode 25 and a twelfth fast recovery diode 26. Specifically, the eleventh fast recovery diode 25 and the twelfth fast recovery diode 26 are connected in series. The eleventh fast recovery diode 25 and the twelfth fast recovery diode 26 are connected in series with the four insulated gate bipolar transistors and the corresponding fast recovery diodes in the rectifier circuit 20 and in parallel. The twelfth fast recovery diode 26 is connected in series with the inverter circuit 30. The eleventh fast recovery diode 25 and the twelfth fast recovery diode 26 are used for commutation, processing the positive half-cycle and the negative half-cycle of the alternating current AC, and realizing efficient current commutation.

[0044] The two upper bridge integrated circuits are respectively connected to the two insulated gate bipolar transistors (IGBTs) and corresponding fast recovery diodes in the rectifier circuit. For example, the first upper bridge integrated circuit 111 is connected to the first IGBT 21 and the first fast recovery diode 211, as well as the second IGBT 22 and the second fast recovery diode 221; the second upper bridge integrated circuit 112 is connected to the third IGBT 23 and the third fast recovery diode 231, as well as the fourth IGBT 24 and the fourth fast recovery diode 241.

[0045] The first insulated gate bipolar transistor 21 and the first fast recovery diode 211 are connected to the second insulated gate bipolar transistor 22 and the second fast recovery diode 221, and the connection point is connected to the phase line input terminal AC-P2 of the AC power supply; the third insulated gate bipolar transistor 23 and the third fast recovery diode 231 are connected to the fourth insulated gate bipolar transistor 24 and the fourth fast recovery diode 241, and the connection point is connected to the connection point of the first upper bridge integrated circuit 111, the first insulated gate bipolar transistor 21 and the second insulated gate bipolar transistor 22 and the second fast recovery diode 221, and the connection point is connected to the neutral line input terminal AC-N and the phase line input terminal AC-P1 of the AC power supply, and the phase line input terminal AC-P1 and the phase line input terminal AC-P2 are connected to the ground terminal.

[0046] An AC power supply of 220V is input, and a series inductor is connected to the intelligent power module to provide power for the intelligent power module. Inside the intelligent power module, the AC is converted to DC through the switching of the insulated gate bipolar transistors and diodes in the rectifier circuit 20. The utility model uses two groups of insulated gate bipolar transistors + diodes to convert AC to DC, and this can be achieved through a set of logic for controlling the switching of the insulated gate bipolar transistors. The existing technology usually uses a rectifier bridge plus a PFC circuit for conversion in the peripheral circuit of the intelligent power module.

[0047] The first upper bridge integrated circuit 111 is connected to the logic power input terminal VCC, the high-side driving floating power terminal VB, the low-end input signal terminal LIN and the high-end input signal terminal HIN; the second upper bridge integrated circuit 112 is connected to the logic power input terminal VCC, the high-side driving power input terminal VB-A, the low-end input signal terminal LIN1 and the high-end input signal terminal HIN1.

[0048] In another implementation, the first control circuit 11 includes two upper bridge integrated circuits: a first upper bridge integrated circuit 111 and a second upper bridge integrated circuit 112; the rectifier circuit includes two insulated gate bipolar transistors and corresponding fast recovery diodes: a second insulated gate bipolar transistor 22 and a second fast recovery diode 221 connected in series with the second insulated gate bipolar transistor 22, a fourth insulated gate bipolar transistor 24 and a fourth fast recovery diode 241 connected in series with the fourth insulated gate bipolar transistor 24; the two upper bridge integrated circuits are respectively connected to the insulated gate bipolar transistors and the corresponding fast recovery diodes in the rectifier circuit 10. For example, the first upper bridge integrated circuit 111 is connected to the second insulated gate bipolar transistor 22 and the second fast recovery diode 221, and the second upper bridge integrated circuit 112 is connected to the fourth insulated gate bipolar transistor 24 and the fourth fast recovery diode 241.

[0049] In another implementation, the first control circuit 11 includes an upper bridge integrated circuit; the rectifier circuit includes four insulated gate bipolar transistors and corresponding fast recovery diodes; the upper bridge integrated circuit is connected to the four insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit 20, that is, only one upper bridge integrated circuit is used, and one upper bridge integrated circuit includes four channels for connecting the four insulated gate bipolar transistors and the corresponding fast recovery diodes.

[0050] In another implementation, the first control circuit 11 includes an upper bridge integrated circuit; the rectifier circuit 20 includes two insulated gate bipolar transistors and corresponding fast recovery diodes; the upper bridge integrated circuit is connected to the two insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit, that is, only one upper bridge integrated circuit is used, and one upper bridge integrated circuit includes two channels for connecting the two insulated gate bipolar transistors and the corresponding fast recovery diodes.

[0051] In an embodiment of the present invention, the control circuit 10 also includes a second control circuit 12 connected to the inverter circuit 30; the inverter circuit 30 includes at least one insulated gate bipolar transistor and a corresponding fast recovery diode; the second control circuit 12 is used to control the at least one insulated gate bipolar transistor and the corresponding fast recovery diode of the inverter circuit 30 to be turned on or off, so that the inverter circuit 30 converts direct current into target alternating current.

[0052] In the embodiment of the present invention, the second control circuit 12 includes a third upper bridge integrated circuit 121 and a lower bridge integrated circuit 122 .

[0053] The inverter circuit 30 includes six insulated gate bipolar transistors and corresponding fast recovery diodes: a fifth insulated gate bipolar transistor 31, a fifth fast recovery diode 311 connected in series with the fifth insulated gate bipolar transistor 31, a sixth insulated gate bipolar transistor 32, a sixth fast recovery diode 321 connected in series with the sixth insulated gate bipolar transistor 32, a seventh insulated gate bipolar transistor 33, a seventh fast recovery diode 331 connected in series with the seventh insulated gate bipolar transistor 33, an eighth insulated gate bipolar transistor 34, an eighth fast recovery diode 341 connected in series with the eighth insulated gate bipolar transistor 34, a ninth insulated gate bipolar transistor 35, a ninth fast recovery diode 351 connected in series with the ninth insulated gate bipolar transistor 35, and a tenth insulated gate bipolar transistor 36, and a tenth fast recovery diode 361 connected in series with the tenth insulated gate bipolar transistor 36.

[0054] The third upper bridge integrated circuit 121 and the lower bridge integrated circuit 122 are respectively connected to the three insulated gate bipolar transistors and corresponding fast recovery diodes in the inverter circuit 30. For example, the third upper bridge integrated circuit 121 is connected to the fifth insulated gate bipolar transistor 31 and the fifth fast recovery diode 311, the sixth insulated gate bipolar transistor 32 and the sixth fast recovery diode 321, and the seventh insulated gate bipolar transistor 33 and the seventh fast recovery diode 331; the lower bridge integrated circuit 122 is connected to the eighth insulated gate bipolar transistor 34 and the eighth fast recovery diode 341, the ninth insulated gate bipolar transistor 35 and the ninth fast recovery diode 351, and the tenth insulated gate bipolar transistor 36 and the tenth fast recovery diode 361.

[0055] The third upper bridge integrated circuit 121 is connected to the high-side driving floating power terminal VB1, the first low-end driving power input terminal VB2, the second low-end driving power input terminal VB3, the high-end input signal terminal INUH corresponding to the U phase of the motor, the high-end input signal terminal INVH corresponding to the V phase of the motor, the high-end input signal terminal INWH corresponding to the W phase of the motor, the logic power input terminal VCCH and the common ground terminal COM1, and the first upper bridge integrated circuit 111 and the second upper bridge integrated circuit 112 are connected to the common ground terminal COM1.

[0056] The lower bridge integrated circuit 122 is connected to a low-side input signal terminal INUL corresponding to the motor's U phase, a low-side input signal terminal INVL corresponding to the motor's V phase, a low-side input signal terminal INWL corresponding to the motor's W phase, a low-side drive power supply voltage VCCL, a fault output terminal FO, a power supply voltage monitoring terminal VSC, a temperature monitoring terminal VOT, and a common ground terminal COM2. The common ground terminal COM1 is connected to the common ground terminal COM2. The output of the lower bridge integrated circuit 122 is grounded.

[0057] In this embodiment of the present invention, bootstrap diodes are provided between the input terminals of the third upper bridge integrated circuit 121. Bootstrap diodes 131, 132, and 133 are provided between the logic power input terminal VCCH of the third upper bridge integrated circuit 121 and the high-side driver floating power terminal VB1, the first low-side driver power input terminal VB2, and the second low-side driver power input terminal VB3, respectively.

[0058] In the embodiment of the present utility model, the load is a three-phase motor; the third upper bridge integrated circuit 121 is connected to three insulated gate bipolar transistors and corresponding fast recovery diodes, and the corresponding three output terminals are connected to the corresponding three input terminals of the three-phase motor.

[0059] In another implementation, the second control circuit 12 includes a full-bridge integrated circuit; the inverter circuit 30 includes six insulated gate bipolar transistors and corresponding fast recovery diodes; the full-bridge integrated circuit is connected to the six insulated gate bipolar transistors and corresponding fast recovery diodes in the inverter circuit 30, that is, the full-bridge integrated circuit includes six channels for connecting the six insulated gate bipolar transistors and corresponding fast recovery diodes.

[0060] Reference Figure 3 , shows a schematic diagram of the appearance of the intelligent power module of an embodiment of the present utility model.

[0061] The intelligent power module (IPM) consists of a plastic package, pins, and a heat sink. The plastic package protects the internal circuits and chips of the IPM, improving its reliability and strength. The pins electrically connect the IPM's internal circuits to the peripheral circuits, maximizing the IPM's electrical function. The heat sink conducts away heat generated during operation, ensuring the module's stability and reliability.

[0062] Reference Figure 4 , shows a front schematic diagram of the internal structure of the intelligent power module of an embodiment of the present utility model.

[0063] The interior of the intelligent power module includes a driver IC, lead frame, power chip, aluminum wire, and gold wire. The main function of the driver chip is to control the switching and protection of the power chip, and it integrates overcurrent, short circuit, overtemperature and other protection functions; the main function of the lead frame is to realize the internal circuit connection and external circuit connection of the intelligent power module, fix the internal chip and provide internal support for the intelligent power module; the function of the power chip is to convert AC power into DC power and then into AC power; the electrical connection between the insulated gate bipolar transistor and the lead frame is realized through aluminum wire. When the module is installed on the PCB, the electrical connection between the insulated gate bipolar transistor and the PCB is realized; the electrical connection between the driver IC and the lead frame is realized through gold wire. After the module is installed, it can be electrically connected to the MCB through the lead frame.

[0064] The present invention provides a highly integrated intelligent power module (IPM). It integrates a rectifier circuit, a PFC circuit, an inverter circuit, and a control circuit. The IPM can directly convert AC power to DC power. The IPM can achieve controllable AC power conversion (AC) to DC power and then to AC power. It also includes numerous detection and protection features to ensure stable and safe operation.

[0065] More circuits are integrated internally, resulting in a high degree of integration. Compared to traditional intelligent power modules, the external rectifier and PFC circuits can be eliminated, resulting in a smaller module and easier layout. The intelligent power module is small in size, occupies less PCB area, and has a more compact system layout. By eliminating the external rectifier and PFC circuits, the system cost is lower. The internal circuit routing of the intelligent power module is shorter than the external PCB routing of traditional solutions, resulting in smaller stray inductance of the system and higher operating stability of the intelligent power module. The rectifier circuit, PFC circuit, inverter circuit, and control circuit of this solution are all wrapped in epoxy resin, which is more reliable than the traditional solution connected via PCB.

[0066] In the embodiment of the present utility model, the production steps of the intelligent power module are as follows:

[0067] 1) Slicing. Paste the wafer on the blue film or UV film and ensure that there are no bubbles on the contact surface between the wafer and the film; send the wafer to the wafer saw for dicing. After dicing, the dies are neatly arranged on the blue film.

[0068] 2) Solder paste printing: The DBC (copper-clad ceramic substrate) is placed in a jig and then conveyed to a conveyor belt. The stencil is pressed against a fixed position on the DBC, and a scraper prints solder paste on a fixed position on the DBC to facilitate chip placement.

[0069] 3) Power chip placement. The printed DBC is transferred to the placement equipment. The equipment grabs the chip from the blue film or UV film and places it on the DBC solder paste. Due to the large variety of power chips, this process needs to be repeated to complete the placement of multiple power chips.

[0070] 4) Frame assembly. The DBC is placed in a fixture after patching. The lead frame is then placed in the same fixture. The DBC, lead frame, and fixture are then transferred to the reflow equipment. After reflowing, the solder paste solidifies, and the lead frame and DBC are assembled.

[0071] 5) Cleaning process. After the frame is assembled, volatiles from the solder paste may adhere to the surface. After reflow soldering, the product needs to be sent to the cleaning equipment for cleaning. Chemicals are used to clean the volatiles from the solder paste and other foreign matter in the product to prevent quality problems in the aluminum and gold wire bonding.

[0072] 6) Driver chip placement. After the lead frame is transferred to the placement equipment's dispensing station, the equipment applies silver glue to the designated soldering locations on the frame. It is then transferred to the placement station, where the equipment's nozzle grabs the chip from the blue film and places it on the silver glue on the frame. Once completed, the frame is placed in a high-temperature oven for curing.

[0073] 7) Aluminum wire bonding. The lead frame is fixed to the device by the equipment, and the aluminum wire bonding equipment completes the electrical connection between the chip and the lead frame through aluminum wire bonding.

[0074] 8) Gold wire bonding: The lead frame is fixed to the device by the equipment, and the gold wire bonding equipment completes the electrical connection between the chip, the lead frame and the power chip through gold wire bonding.

[0075] 9) Plastic encapsulation. After the product is assembled, the frame is transferred to the mold cavity of the plastic encapsulation equipment. The mold is closed and the equipment is evacuated. Once the set vacuum value is reached, melted plastic encapsulation material is introduced into the mold cavity to fill the gaps. After the plastic encapsulation material pre-cures, the mold is opened and the product is removed.

[0076] 10) PMC. The pre-cured product is sent to the oven at 125℃. After 6 hours, the plastic package is completely cured.

[0077] 11) Reinforcement cutting and forming. The cured frame is sent into the mold of the reinforcement cutting equipment. After the mold is stamped, the reinforcement of the frame is cut off, and then it is sent into the forming mold to complete the bending of the functional legs of the product.

[0078] 12) Printing: The product is sent to the laser printing device to complete the labeling of product-related information.

[0079] 13) FT test: After the product is printed, it will undergo the final electrical performance test. Modules that meet the test requirements will be shipped normally.

[0080] 14) Packing and shipment. After the product has completed the FT test, it will be packaged into the specified form and shipped.

[0081] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or terminal device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or terminal device that includes the element.

[0082] The above is a detailed introduction to an intelligent power module provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only intended to help understand the method and core idea of ​​the present invention. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there may be changes in the specific implementation methods and application scopes. In summary, the contents of this specification should not be understood as limiting the present invention.

Claims

1. An intelligent power module, characterized in that: include: Control circuit, rectifier circuit and inverter circuit; The control circuit is connected to the inverter circuit and the rectifier circuit respectively, and is used to control the working states of the inverter circuit and the rectifier circuit; The rectifier circuit is connected to the inverter circuit, and is configured to receive external AC power, convert the external AC power into DC power, and transmit the DC power to the inverter circuit; The inverter circuit is used to convert the direct current into a target alternating current, and transmit the target alternating current to a load connected to the inverter circuit.

2. The module according to claim 1, characterized in that The control circuit includes a first control circuit connected to the rectifier circuit; the rectifier circuit includes at least one insulated gate bipolar transistor and a corresponding fast recovery diode; the first control circuit is used to control the at least one insulated gate bipolar transistor and the corresponding fast recovery diode of the rectifier circuit to be turned on or off, so that the rectifier circuit converts the external alternating current into direct current.

3. The module according to claim 2, characterized in that The first control circuit includes two upper bridge integrated circuits; the rectifier circuit includes four insulated gate bipolar transistors and corresponding fast recovery diodes; the two upper bridge integrated circuits are respectively connected to the two insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit.

4. The module according to claim 2, characterized in that The first control circuit includes two upper bridge integrated circuits; the rectifier circuit includes two insulated gate bipolar transistors and corresponding fast recovery diodes; the two upper bridge integrated circuits are respectively connected to the insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit.

5. The module according to claim 2, characterized in that The first control circuit includes an upper bridge integrated circuit; the rectifier circuit includes four insulated gate bipolar transistors and corresponding fast recovery diodes; the upper bridge integrated circuit is connected to the four insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit.

6. The module according to claim 2, characterized in that The first control circuit includes an upper bridge integrated circuit; the rectifier circuit includes two insulated gate bipolar transistors and corresponding fast recovery diodes; the upper bridge integrated circuit is connected to the two insulated gate bipolar transistors and corresponding fast recovery diodes in the rectifier circuit.

7. The module according to claim 1, characterized in that The control circuit also includes a second control circuit connected to the inverter circuit; the inverter circuit includes at least one insulated gate bipolar transistor and a corresponding fast recovery diode; the second control circuit is used to control the at least one insulated gate bipolar transistor and the corresponding fast recovery diode of the inverter circuit to be turned on or off, so that the inverter circuit converts the direct current into the target alternating current.

8. The module according to claim 7, characterized in that The second control circuit includes an upper bridge integrated circuit and a lower bridge integrated circuit; the inverter circuit includes six insulated gate bipolar transistors and corresponding fast recovery diodes; the upper bridge integrated circuit and the lower bridge integrated circuit are respectively connected to the three insulated gate bipolar transistors and corresponding fast recovery diodes in the inverter circuit.

9. The module according to claim 7, characterized in that The second control circuit includes a full-bridge integrated circuit; the inverter circuit includes six insulated gate bipolar transistors and corresponding fast recovery diodes; the full-bridge integrated circuit is connected to the six insulated gate bipolar transistors and corresponding fast recovery diodes in the inverter circuit.

10. The module according to claim 8, characterized in that A bootstrap diode is provided between the input terminals of the upper bridge integrated circuit.

11. The module according to claim 10, characterized in that The bootstrap diodes are respectively arranged between the logic power input terminal of the upper bridge integrated circuit and the driving high-side driving floating power terminal, the first low-end driving power input terminal and the second low-end driving power input terminal.

12. The module according to claim 8, characterized in that The load is a three-phase motor; the upper bridge integrated circuit is connected to three insulated gate bipolar transistors and corresponding fast recovery diodes, and the corresponding three output terminals are connected to the corresponding three input terminals of the three-phase motor.

Images