Gas conveying device and chemical vapor deposition equipment

Abstract

The utility model relates to the technical field of chemical vapor deposition processes, and particularly provides a gas conveying device and chemical vapor deposition equipment. The gas conveying device comprises an operation pipeline, an exhaust pipeline, a gas guide pipeline, at least one gas conveying pipeline, a first flow controller and a second flow controller. Part of carrier gas can be directly conveyed to the reaction cavity through the gas guide pipeline, so that the flow and pressure of other pipelines are reduced. The first flow controller is used for controlling the operation flow of the operation pipeline or the exhaust flow of the exhaust pipeline, and the second flow controller is used for controlling the flow of the carrier gas in the gas guide pipeline, so that the adjustable threshold values of the convergence flow and pressure of the process gas corresponding to each gas conveying pipeline can be improved; therefore, the difficulty in adjusting the pipeline pressure and the pipeline flow is reduced, and the stability of the pipeline pressure and the pipeline flow is improved.

Description

Technical Field

[0001] The present application relates to the technical field of chemical vapor deposition processes, and in particular to a gas delivery device and a chemical vapor deposition apparatus. Background Art

[0002] Chemical Vapor Deposition (CVD) is a technique that uses gaseous or vaporous substances to react on a substrate surface to form solid deposits. These reactions typically occur on a heated substrate and can form thin films of various materials and structures. During the CVD process, one or more process gases are introduced into a reaction chamber and react chemically under the influence of external energy, forming the desired thin film on the heated substrate surface.

[0003] During the CVD process, carrier gases play a role in promoting the reaction, assisting in substrate cleaning, providing hydrogen atoms, and controlling reaction conditions. However, currently, most carrier gases are located at the process gas end, entering the reaction chamber along with the process gas. This can easily lead to excessively high total flow and pressure at the process gas inlet, necessitating a correspondingly higher source pressure for the process gas. This, in turn, increases the difficulty of regulating pipeline pressure and flow, hindering their stability. Utility Model Content

[0004] In view of this, the purpose of the embodiments of the present application is to provide a gas delivery device and a chemical vapor deposition device to solve the technical problems of high difficulty in adjusting pipeline pressure and pipeline flow and poor stability in existing CVD equipment.

[0005] In a first aspect, an embodiment of the present application provides a gas delivery device, the device comprising: an operating pipeline, an exhaust pipeline, a gas guide pipeline, at least one gas delivery pipeline, a first flow controller and a second flow controller;

[0006] One end of the operation pipeline, the exhaust pipeline, and the gas guide pipeline is connected to the carrier gas input end; the other end of the operation pipeline is connected to the reaction chamber, the other end of the exhaust pipeline is connected to the exhaust gas treatment equipment, and the other end of the gas guide pipeline is connected to the end of the operation pipeline close to the reaction chamber; one end of the gas delivery pipeline is connected to the process gas input end, and the other end is connected to the operation pipeline or the exhaust pipeline;

[0007] The first flow controller is connected to the operating pipeline or the exhaust pipeline; wherein the first flow controller is used to control the operating flow of the operating pipeline or the exhaust flow of the exhaust pipeline;

[0008] The second flow controller is connected to the air guide line; wherein, the second flow controller is used to control the air guide flow of the air guide line.

[0009] In the above implementation process, the gas delivery device includes an operating pipeline, an exhaust pipeline, a gas guide pipeline, at least one gas delivery pipeline, a first flow controller, and a second flow controller. Since one end of the gas guide pipeline is connected to the carrier gas input end and the other end is connected to the end of the operating pipeline close to the reaction chamber, part of the carrier gas can be directly delivered to the reaction chamber through the gas guide pipeline to reduce the flow and pressure of the remaining pipelines, thereby reducing the flow and pressure of each process gas inlet and the source pressure required by the process gas. By reducing the flow and pressure of each process gas inlet and the source pressure required by the process gas, and controlling the operating flow of the operating pipeline or the exhaust flow of the exhaust pipeline by the first flow controller, and controlling the carrier gas flow in the gas guide pipeline by the second flow controller, the adjustable threshold value of the process gas inlet flow and pressure corresponding to each gas delivery pipeline can be increased, thereby reducing the difficulty of adjusting the pipeline pressure and pipeline flow, and improving the stability of the pipeline pressure and pipeline flow. The technical problem of high difficulty in adjusting the pipeline pressure and pipeline flow and poor stability in existing CVD equipment is solved.

[0010] Optionally, in an embodiment of the present application, the device further includes: a regulating pipeline and a regulating flow controller; one end of the regulating pipeline is connected to the carrier gas input end, and the other end is connected to the end of the operating pipeline close to the reaction chamber; the regulating flow controller is connected to the regulating pipeline; wherein, the regulating flow controller is used to control the regulating flow of the regulating pipeline.

[0011] In the above implementation process, part of the carrier gas can be delivered to the end of the operating pipeline close to the reaction chamber through the regulating pipeline, and the carrier gas flow in the regulating pipeline can be controlled by adjusting the flow controller to adjust the process gas inlet flow and pressure corresponding to each gas delivery pipeline, thereby further improving the stability of the pipeline pressure and pipeline flow.

[0012] Optionally, in an embodiment of the present application, the device further includes: a first interlocking unit and at least one second interlocking unit; the first flow controller is connected to the operating pipeline or the exhaust pipeline based on the first interlocking unit; the other end of the gas delivery pipeline is connected to the operating pipeline or the exhaust pipeline based on the second interlocking unit.

[0013] In the above implementation, the first interlock unit enables switching the first flow controller to the operating or exhaust line based on actual needs, thereby controlling the flow rate in the operating or exhaust line based on the first flow controller. The second interlock unit enables switching the gas delivery line to the operating or exhaust line based on actual needs, thereby delivering process gas to the operating or exhaust line based on the gas delivery line. This ensures the normal operation of the CVD reaction process.

[0014] Optionally, in an embodiment of the present application, the other end of the regulating pipeline is arranged on the inner side of the other end of the gas guide pipeline; the first flow controller includes a pipeline flow regulator and an operation flow controller; one end of the pipeline flow regulator is connected to the carrier gas input end, and the other end is connected to the operation pipeline or the exhaust pipeline based on the first interlocking unit; the pipeline flow regulator is used to regulate the carrier gas input amount of the operation pipeline or the exhaust pipeline; the operation flow controller is arranged on the operation pipeline, and specifically between the other end of the regulating pipeline and the other end of the gas guide pipeline; the operation flow controller is used to control the operation flow of the operation pipeline.

[0015] In the above implementation process, since the pipeline flow controller can be used to control the carrier gas input amount of the operating pipeline or the exhaust pipeline, and the operating flow controller can be used to control the operating flow of the operating pipeline, based on the pipeline flow controller and the operating flow controller, the process gas inlet flow corresponding to each gas delivery pipeline can be indirectly controlled.

[0016] Optionally, in an embodiment of the present application, the device further includes: an operating pressure controller and an exhaust pressure controller; the operating pressure controller is connected to a side of the operating pipeline close to the carrier gas input end; wherein, the operating pressure controller is used to control the pressure of the operating pipeline; the exhaust pressure controller is connected to a side of the exhaust pipeline close to the carrier gas input end; wherein, the exhaust pressure controller is used to control the pressure of the exhaust pipeline.

[0017] In the above implementation process, the pressures of the operating pipeline and the exhaust pipeline can be controlled respectively by the operating pressure controller and the exhaust pressure controller, thereby improving the control accuracy of the CVD reaction process and obtaining a better process reaction effect.

[0018] Optionally, in an embodiment of the present application, the gas delivery pipeline includes a first gas delivery pipeline and a second gas delivery pipeline; one end of the first gas delivery pipeline is connected to the input end of the solid and liquid process gas, and one end of the second gas delivery pipeline is connected to the input end of the gaseous process gas; the other ends of the first gas delivery pipeline and the second gas delivery pipeline are connected to the operation pipeline or the exhaust pipeline.

[0019] Optionally, in an embodiment of the present application, the first gas delivery pipeline includes: a carrier gas delivery pipeline, a process gas source delivery pipeline, a gas source dilution pipeline, a reaction gas source delivery pipeline and a reaction gas source exhaust pipeline; one end of the carrier gas delivery pipeline is connected to the carrier gas input end, and the other end is inserted into the bottom of the solid-liquid process gas source storage unit; one end of the process gas source delivery pipeline is inserted into the solid-liquid process gas source storage unit, and the other end is connected to one end of the gas source dilution pipeline; the other end of the gas source dilution pipeline is connected to the carrier gas input end; one end of the reaction gas source delivery pipeline is respectively connected to the other end of the process gas source delivery pipeline and one end of the gas source dilution pipeline, and the other end is connected to the operation pipeline or the exhaust pipeline; one end of the reaction gas source exhaust pipeline is connected to one end of the reaction gas source delivery pipeline, and the other end is connected to the waste gas treatment equipment.

[0020] In the above implementation process, the carrier gas can be delivered to the bottom of the solid-liquid process gas storage unit via the carrier gas delivery pipeline, and the corresponding process gas source can be removed from the solid-liquid process gas storage unit. The carrier gas and the removed process gas source are then delivered to the reaction gas source delivery pipeline via the process gas source delivery pipeline. The reaction gas source delivery pipeline is then mixed with the carrier gas delivered by the gas source dilution pipeline to obtain the reaction gas source. Finally, the reaction gas source is delivered to the operation pipeline or exhaust pipeline via the reaction gas source delivery pipeline, or excess reaction gas source is delivered to the exhaust gas treatment equipment via the reaction gas source discharge pipeline.

[0021] Optionally, in an embodiment of the present application, the device further includes: a carrier gas delivery flow controller, a gas source dilution flow controller and a reaction gas source delivery flow controller respectively arranged on the carrier gas delivery pipeline, the gas source dilution pipeline and the reaction gas source delivery pipeline.

[0022] In the above implementation process, the carrier gas delivery flow controller, the gas source dilution flow controller and the reaction gas source delivery flow controller can respectively control the gas flow of the carrier gas delivery pipeline, the gas source dilution pipeline and the reaction gas source delivery pipeline, thereby achieving precise control of the gas flow delivered from the first gas delivery pipeline to the operation pipeline or the exhaust pipeline, so as to obtain better process reaction effects.

[0023] Optionally, in an embodiment of the present application, the device further includes: a linkage controller; the linkage controller includes a first control unit and a second control unit; the first control unit is arranged on the carrier gas delivery pipeline, and the second control unit is arranged on the process gas source delivery pipeline; the linkage controller is used to control the on and off of the carrier gas delivery pipeline and the process gas source delivery pipeline based on the first control unit and the second control unit.

[0024] In the above implementation process, the first and second control units based on the linkage controller can simultaneously disconnect the carrier gas delivery pipeline and the process gas source delivery pipeline, facilitating replacement of the process gas source. After the process gas source is replaced, the carrier gas delivery pipeline and the process gas source delivery pipeline are simultaneously connected to quickly restore normal operation of the pipelines. This improves the efficiency of replacing and inspecting the process gas source.

[0025] In a second aspect, an embodiment of the present application further provides a chemical vapor deposition device, the device comprising: a reaction chamber, an exhaust gas treatment device, a heating device, and a gas delivery device as described in any one of the first aspects above;

[0026] The heating device is used to heat the reaction chamber to a target reaction temperature.

[0027] The beneficial effects of the present application are as follows: the gas delivery device includes an operating pipeline, an exhaust pipeline, a gas guide pipeline, at least one gas delivery pipeline, a first flow controller and a second flow controller. Since one end of the gas guide pipeline is connected to the carrier gas input end and the other end is connected to the end of the operating pipeline close to the reaction chamber, part of the carrier gas can be directly delivered to the reaction chamber through the gas guide pipeline to reduce the flow and pressure of the remaining pipelines, thereby reducing the flow and pressure of each process gas inlet and the source pressure required for the process gas. By reducing the flow and pressure of each process gas inlet and the source pressure required for the process gas, and controlling the carrier gas flow in the gas guide pipeline through the second flow controller, the adjustable threshold value of the process gas inlet flow and pressure corresponding to each gas delivery pipeline can be increased, thereby reducing the difficulty of adjusting the pipeline pressure and pipeline flow, and improving the stability of the pipeline pressure and pipeline flow. The technical problem of high difficulty in adjusting the pipeline pressure and pipeline flow and poor stability in the existing CVD equipment is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0029] Figure 1 A schematic structural diagram of a gas delivery device provided in an embodiment of the present application;

[0030] Figure 2 A schematic structural diagram of another gas delivery device provided in an embodiment of the present application.

[0031] Reference numerals: 01-gas delivery device; Run-running pipeline; Vent-exhaust pipeline; Inject-gas pipeline; Xn-gas delivery pipeline; M100-first flow controller; M101-pipeline flow controller; M102-running flow controller; M200-second flow controller; CG-carrier gas input end; Push-regulating pipeline; M300-regulating flow controller; V1-first interlocking unit; V2n-second interlocking unit; PC01- Operating pressure controller; PC02-exhaust pressure controller; X101-carrier gas delivery pipeline; X102-process gas source delivery pipeline; X103-gas source dilution pipeline; X104-reaction gas source delivery pipeline; X105-reaction gas source exhaust pipeline; M401-carrier gas delivery flow controller; M403-gas source dilution flow controller; M404-reaction gas source delivery flow controller; V3-linkage controller; V31-first control unit; V32-second control unit. DETAILED DESCRIPTION

[0032] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0034] In the description of the embodiments of this application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood to indicate or imply relative importance or implicitly specify the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is two or more, unless otherwise specifically defined.

[0035] Please refer to Figure 1 , Figure 1 Schematic diagram of the structure of a gas delivery device 01 provided in an embodiment of the present application. The gas delivery device 01 includes: a running pipeline Run, an exhaust pipeline Vent, a gas guide pipeline Inject, at least one gas delivery pipeline Xn, a first flow controller M100, and a second flow controller M200;

[0036] One end of the running pipeline Run, the exhaust pipeline Vent, and the gas guide pipeline Inject is connected to the carrier gas input terminal CG; the other end of the running pipeline Run is connected to the reaction chamber, the other end of the exhaust pipeline Vent is connected to the exhaust gas treatment equipment, and the other end of the gas guide pipeline Inject is connected to the end of the running pipeline Run close to the reaction chamber; one end of the gas delivery pipeline Xn is connected to the process gas input terminal, and the other end is connected to the running pipeline Run or the exhaust pipeline Vent;

[0037] The first flow controller M100 is connected to the running pipeline Run or the exhaust pipeline Vent; wherein the first flow controller M100 is used to control the running flow of the running pipeline Run or the exhaust flow of the exhaust pipeline Vent;

[0038] The second flow controller M200 is connected to the gas guiding pipeline Inject; wherein, the second flow controller M200 is used to control the gas guiding flow of the gas guiding pipeline Inject.

[0039] Among them, the running pipeline Run is used to introduce the reaction gas into the heated reaction chamber, so that these gases undergo chemical reactions on the surface of the substrate to generate the required thin film material. The exhaust pipeline Vent is used to discharge excess reaction gas out of the system (specifically, it can be discharged to the exhaust gas treatment equipment); and after the thin film deposition process is completed, the remaining gas in the reaction chamber is discharged out of the system (specifically, it can be discharged to the exhaust gas treatment equipment). The gas guide pipeline Inject is used to deliver part of the carrier gas directly to the reaction chamber to reduce the flow and pressure of the remaining pipelines. The first flow controller M100 can be connected to the running pipeline Run or the exhaust pipeline Vent through an interlocking device. The number of gas delivery pipelines can be 1 or more, Figure 1 Multiple gas delivery pipelines (X1, X2, Xn-1, and Xn; where n is a positive integer) are shown. The control range of the second flow controller M200 can be 50 SLM (standard liters per minute), 25 SLM, or other reasonable values. The second flow controller M200 can control the gas flow rate of the carrier gas delivered in the gas pipeline Inject. The gas flow rate of the gas pipeline Inject can be adjusted according to the actual application scenario.

[0040] Thus, the gas delivery device 01 provided in the embodiment of the present application includes a run pipeline Run, an exhaust pipeline Vent, a gas pipeline Inject, at least one gas delivery pipeline Xn, a first flow controller M100, and a second flow controller M200. Because one end of the gas pipeline Inject is connected to the carrier gas input terminal CG and the other end is connected to the end of the run pipeline Run close to the reaction chamber, part of the carrier gas can be directly delivered to the reaction chamber through the gas pipeline Inject, thereby reducing the flow rate and pressure of the remaining pipelines, thereby reducing the flow rate and pressure at the inlet of each process gas and the source pressure required by the process gas. By reducing the flow rate and pressure at each process gas inlet and the required source pressure of the process gas, controlling the operating flow rate of the operating pipeline Run or the exhaust flow rate of the exhaust pipeline Vent through the first flow controller M100, and controlling the carrier gas flow rate in the gas guide pipeline Inject through the second flow controller M200, the adjustable thresholds of the process gas inlet flow rate and pressure corresponding to each gas delivery pipeline Xn can be increased, thereby reducing the difficulty of adjusting the pipeline pressure and pipeline flow rate and improving the stability of the pipeline pressure and pipeline flow rate. This solves the technical problem of high difficulty in adjusting pipeline pressure and pipeline flow rate and poor stability in existing CVD equipment.

[0041] Please refer to Figure 2 , Figure 2 A schematic diagram of the structure of another gas delivery device 01 provided in an embodiment of the present application. In some optional embodiments, the gas delivery device 01 further includes: a regulating pipeline Push and a regulating flow controller M300; one end of the regulating pipeline Push is connected to the carrier gas input terminal CG, and the other end is connected to the end of the run pipeline Run near the reaction chamber; the regulating flow controller M300 is connected to the regulating pipeline Push; wherein the regulating flow controller M300 is used to control the regulating flow of the regulating pipeline Push.

[0042] The control range of the flow controller M300 can be 5 SLM or other reasonable values. The Push line can be used to deliver some carrier gas to the end of the Run line, near the reaction chamber. The flow controller M300 controls the carrier gas flow in the Push line to adjust the process gas inlet flow and pressure corresponding to each gas delivery line Xn, further improving the stability of the line pressure and flow.

[0043] In some optional embodiments, the gas delivery device 01 also includes: a first interlocking unit V1 and at least one second interlocking unit V2n; the first flow controller M100 is connected to the running pipeline Run or the exhaust pipeline Vent based on the first interlocking unit V1; the other end of the gas delivery pipeline Xn is connected to the running pipeline Run or the exhaust pipeline Vent based on the second interlocking unit V2n.

[0044] The first interlocking unit V1 can be implemented by an interlocking valve (only one valve can be opened at the same time). The second interlocking unit V2n can also be implemented by an interlocking valve, such as a pneumatic interlocking valve. The number of the second interlocking units V2n can be consistent with the number of the gas delivery pipelines Xn. The number of the second interlocking units V2n can be one or more. Figure 2 The figure shows the case where there are multiple second interlocking units (specifically including V21, V22, V2(n-1) and V2n; where n is a positive integer). Different second interlocking units V2n can be connected to the same pipeline (either the running pipeline Run or the exhaust pipeline Vent) at the same time, or they can be connected to different pipelines at the same time (some connected to the running pipeline Run, and the other connected to the exhaust pipeline Vent). This application does not make any specific restrictions on this. Figure 2 Taking the gas delivery device 01 shown as an example, when the upper valve of one of the second interlock units (V21) is open, the gas delivery pipeline (X1) is connected to the operation pipeline Run; when the lower valve of one of the second interlock units (V21) is open, the gas delivery pipeline (X1) is connected to the exhaust pipeline Vent. Through the first interlock unit V1, the first flow controller M100 can be switched to access the operation pipeline Run or the exhaust pipeline Vent according to actual needs, so as to control the flow of the operation pipeline Run or the exhaust pipeline Vent based on the first flow controller M100. Through the second interlock unit V2n, the gas delivery pipeline Xn can be switched to access the operation pipeline Run or the exhaust pipeline Vent according to actual needs, so as to deliver the process gas to the operation pipeline Run or the exhaust pipeline Vent based on the gas delivery pipeline Xn. The normal progress of the CVD reaction process is guaranteed.

[0045] In some optional embodiments, the other end of the regulating pipeline Push is arranged on the inner side of the other end of the gas guiding pipeline Inject; the first flow controller M100 includes a pipeline flow regulator M101 and an operation flow controller M102; one end of the pipeline flow regulator M101 is connected to the carrier gas input end CG, and the other end is connected to the operation pipeline Run or the exhaust pipeline Vent based on the first interlocking unit V1; the pipeline flow regulator M101 is used to regulate the carrier gas input amount of the operation pipeline Run or the exhaust pipeline Vent; the operation flow controller M102 is arranged on the operation pipeline Run, and is specifically arranged between the other end of the regulating pipeline Push and the other end of the gas guiding pipeline Inject; the operation flow controller M102 is used to control the operation flow of the operation pipeline Run.

[0046] Among them, when the control range of the flow controller M300 is adjusted to 5SLM, the control range of the pipeline flow controller M101 can also be 5SLM; accordingly, the control range of the running flow controller M102 can be 10SLM or other reasonable values. Figure 2 Taking the illustrated gas delivery device 01 as an example, when the upper valve of the first interlock unit V1 is open, the pipeline flow controller M101 is connected to the run pipeline Run; when the lower valve of the first interlock unit V1 is open, the pipeline flow controller M101 is connected to the exhaust pipeline Vent. Since the pipeline flow controller M101 can regulate the carrier gas input amount of the run pipeline Run or the exhaust pipeline Vent, and the operation flow controller M102 can control the operating flow of the run pipeline Run, the pipeline flow controller M101 and the operation flow controller M102 can indirectly control the process gas inflow flow corresponding to each gas delivery pipeline Xn.

[0047] In some optional embodiments, the gas delivery device 01 further includes: an operating pressure controller PC01 and an exhaust pressure controller PC02; the operating pressure controller PC01 is connected to the side of the operating pipeline Run close to the carrier gas input end CG; wherein, the operating pressure controller PC01 is used to control the pressure of the operating pipeline Run; the exhaust pressure controller PC02 is connected to the side of the exhaust pipeline Vent close to the carrier gas input end CG; wherein, the exhaust pressure controller PC02 is used to control the pressure of the exhaust pipeline Vent.

[0048] Among them, the running pressure controller PC01 and the exhaust pressure controller PC02 can be implemented by pressure controllers. The running pressure controller PC01 and the exhaust pressure controller PC02 can be implemented by the same model of pressure controller or by different models of pressure controllers. For example, the pressure range of the running pressure controller PC01 and the exhaust pressure controller PC02 can be 0-300mbar or 0-150mbar. The running pressure controller PC01 and the exhaust pressure controller PC02 can also be set to the back-end pressure control mode to improve the control accuracy of the corresponding pipeline pressure; the specific implementation method of the running pressure controller PC01 and the exhaust pressure controller PC02 can be adjusted according to actual application requirements. The running pressure controller PC01 and the exhaust pressure controller PC02 can be used to control the pressure of the running pipeline Run and the exhaust pipeline Vent respectively, thereby improving the control accuracy of the CVD reaction process and obtaining better process reaction effects.

[0049] In some optional embodiments, the gas delivery pipeline Xn includes a first gas delivery pipeline and a second gas delivery pipeline; one end of the first gas delivery pipeline is connected to the input end of the solid and liquid process gas, and one end of the second gas delivery pipeline is connected to the input end of the gaseous process gas; the other ends of the first gas delivery pipeline and the second gas delivery pipeline are connected to the operation pipeline Run or the exhaust pipeline Vent.

[0050] The process gas includes gaseous process gas stored in gaseous form and solid-liquid storage gas stored in solid-liquid form. The first gas delivery pipeline refers to the pipeline used to deliver the process gas stored in solid-liquid form, and the second gas delivery pipeline refers to the pipeline used to deliver the process gas stored in gaseous form. It should be noted that Figure 1 and Figure 2 Specifically shown is a situation where X1 is a first gas delivery pipeline, and one end of X1 is connected to an input end of solid and liquid process gases.

[0051] In some optional embodiments, Figure 1 and Figure 2The first gas delivery pipeline X1 is shown as an example. The first gas delivery pipeline may specifically include: a carrier gas delivery pipeline X101, a process gas source delivery pipeline X102, a gas source dilution pipeline X103, a reaction gas source delivery pipeline X104 and a reaction gas source exhaust pipeline X105; one end of the carrier gas delivery pipeline X101 is connected to the carrier gas input terminal CG, and the other end is inserted into the bottom of the solid-liquid process gas source storage unit; one end of the process gas source delivery pipeline X102 is inserted into the solid-liquid process gas source storage unit, and the other end is connected to one end of the gas source dilution pipeline X103; the other end of the gas source dilution pipeline X103 is connected to the carrier gas input terminal CG; one end of the reaction gas source delivery pipeline X104 is respectively connected to the other end of the process gas source delivery pipeline X102 and one end of the gas source dilution pipeline X103, and the other end is connected to the operation pipeline Run or the exhaust pipeline Vent; one end of the reaction gas source exhaust pipeline X105 is connected to one end of the reaction gas source delivery pipeline X104, and the other end is connected to the exhaust gas treatment equipment.

[0052] The carrier gas delivery pipeline X101 delivers the carrier gas to the bottom of the solid-liquid process gas storage unit, where it then removes the corresponding process gas. The carrier gas and the removed process gas are delivered to the reaction gas delivery pipeline X104 via the process gas delivery pipeline X102, where they are mixed with the carrier gas delivered by the gas dilution pipeline X103 to produce the reaction gas. Finally, the reaction gas is delivered to the run pipeline Run or the exhaust pipeline Vent via the reaction gas delivery pipeline X104, or excess reaction gas is delivered to the exhaust gas treatment equipment via the reaction gas exhaust pipeline X105.

[0053] In some optional embodiments, the gas delivery device 01 also includes: a carrier gas delivery flow controller M401, a gas source dilution flow controller M403 and a reaction gas source delivery flow controller M404, which are respectively arranged on the carrier gas delivery pipeline X101, the gas source dilution flow controller M403 and the reaction gas source delivery pipeline X104.

[0054] Among them, the control range of the carrier gas delivery flow controller M401 can be 500 SCCM (standard cubic centimeters per minute) or other reasonable values, and the control ranges of the gas source dilution flow controller M403 and the reaction gas source delivery flow controller M404 can both be 1000 SCCM. It should be noted that the specific ranges of different flow controllers can be adjusted according to actual application requirements. The gas flow rates of the carrier gas delivery pipeline X101, the gas source dilution pipeline X103 and the reaction gas source delivery pipeline X104 can be controlled respectively by the carrier gas delivery flow controller M401, the gas source dilution flow controller M403 and the reaction gas source delivery flow controller M404, so as to achieve precise control of the gas flow rate delivered by the first gas delivery pipeline to the operation pipeline Run or the exhaust pipeline Vent, so as to obtain better process reaction effects.

[0055] In some optional embodiments, the gas delivery device 01 further includes: a reaction gas source exhaust flow controller provided on the reaction gas source exhaust pipeline X105; and controlling the gas flow on the reaction gas source exhaust pipeline X105 based on the reaction gas source exhaust flow controller.

[0056] In some optional embodiments, the gas delivery device 01 also includes: a linkage controller V3; the linkage controller V3 includes a first control unit V31 and a second control unit V32; the first control unit V31 is arranged on the carrier gas delivery pipeline X101, and the second control unit V32 is arranged on the process gas source delivery pipeline X102; the linkage controller V3 is used to control the on and off of the carrier gas delivery pipeline X101 and the process gas source delivery pipeline X102 based on the first control unit V31 and the second control unit V32.

[0057] The linkage controller V3 can be implemented by two valves that can be opened or closed simultaneously (for example, two normally closed pneumatic valves controlled in a linked manner). The first control unit V31 and the second control unit V32 based on the linkage controller V3 can simultaneously disconnect the carrier gas delivery pipeline X101 and the process gas source delivery pipeline X102, facilitating process gas source replacement. After the process gas source is replaced, the carrier gas delivery pipeline X101 and the process gas source delivery pipeline X102 are simultaneously connected, quickly restoring normal operation of the pipelines. This improves the efficiency of process gas source replacement and inspection.

[0058] In some optional embodiments, the gas delivery device 01 further includes: a flow regulator and / or a pipeline on-off controller; the flow regulator and / or the pipeline on-off controller are arranged on the exhaust pipeline.

[0059] In some optional embodiments, the gas delivery device 01 further includes: a short-circuit controller; one end of the short-circuit controller is connected to the carrier gas delivery pipeline, and the other end is connected to the process gas source delivery pipeline.

[0060] In some optional embodiments, the gas delivery device 01 further includes: an operating exhaust branch and an operating exhaust controller; the two ends of the operating exhaust branch are respectively connected to the reaction chamber and the exhaust gas treatment equipment; the operating exhaust controller is arranged on the operating exhaust branch to control the discharge of residual gas in the operating pipeline.

[0061] Among them, the flow regulator can be realized by a needle valve, the pipeline on-off controller and the short-circuit controller can be realized by a normally open pneumatic valve, and the operation exhaust controller can be realized by a normally closed pneumatic valve.

[0062] The embodiment of the present application further provides a chemical vapor deposition device, the chemical vapor deposition device comprising: a reaction chamber, an exhaust gas treatment device, a heating device, and a gas delivery device 01 as described in any one of the first aspects above;

[0063] The heating device is used to heat the reaction chamber to a target reaction temperature.

[0064] It should be understood that the chemical vapor deposition equipment corresponds to the above-mentioned gas delivery device 01 embodiment. The specific implementation method of the chemical vapor deposition equipment can be found in the description above. To avoid repetition, the detailed description is appropriately omitted here.

[0065] In the several embodiments provided in the embodiments of the present application, it should be understood that the disclosed apparatus / device may also be implemented in other ways. The apparatus embodiments described above are merely schematic. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architectures, functions, and operations of the apparatus according to the multiple embodiments of the embodiments of the present application. In this regard, each box in the flowchart or block diagram may represent a module or a portion of a module. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart, may be implemented using a dedicated hardware-based system that performs the specified functions or actions, or may be implemented using a combination of dedicated hardware and computer instructions.

[0066] In addition, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0067] The above description is only an optional implementation method of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited to this. Any technician familiar with this technical field can easily think of changes or replacements within the technical scope disclosed in the embodiment of the present application, and they should all be covered by the protection scope of the embodiment of the present application.

Claims

1. A gas delivery device, characterized in that: The device comprises: an operating pipeline, an exhaust pipeline, a gas guide pipeline, at least one gas delivery pipeline, a first flow controller and a second flow controller; One end of the operation pipeline, the exhaust pipeline, and the gas guide pipeline is connected to the carrier gas input end; the other end of the operation pipeline is connected to the reaction chamber, the other end of the exhaust pipeline is connected to the exhaust gas treatment equipment, and the other end of the gas guide pipeline is connected to the end of the operation pipeline close to the reaction chamber; one end of the gas delivery pipeline is connected to the process gas input end, and the other end is connected to the operation pipeline or the exhaust pipeline; The first flow controller is connected to the operating pipeline or the exhaust pipeline; wherein the first flow controller is used to control the operating flow of the operating pipeline or the exhaust flow of the exhaust pipeline; The second flow controller is connected to the air guide line; wherein, the second flow controller is used to control the air guide flow of the air guide line.

2. The device according to claim 1, characterized in that The device also includes: an adjustment pipeline and an adjustment flow controller; One end of the regulating pipeline is connected to the carrier gas input end, and the other end is connected to the end of the operating pipeline close to the reaction chamber; The regulating flow controller is connected to the regulating pipeline; wherein the regulating flow controller is used to control the regulating flow of the regulating pipeline.

3. The device according to claim 2, characterized in that The device further comprises: a first interlocking unit and at least one second interlocking unit; The first flow controller is connected to the operating pipeline or the exhaust pipeline based on the first interlocking unit; The other end of the gas delivery pipeline is connected to the operation pipeline or the exhaust pipeline based on the second interlocking unit.

4. The device according to claim 3, characterized in that in, The other end of the regulating pipeline is arranged on the inner side of the other end of the air guide pipeline; the first flow controller includes a pipeline flow regulator and an operation flow controller; One end of the pipeline flow controller is connected to the carrier gas input end, and the other end is connected to the operating pipeline or the exhaust pipeline based on the first interlocking unit; The pipeline flow controller is used to control the carrier gas input amount of the operating pipeline or the exhaust pipeline; The operating flow controller is arranged on the operating pipeline, and is specifically arranged between the other end of the regulating pipeline and the other end of the air guide pipeline; the operating flow controller is used to control the operating flow of the operating pipeline.

5. The device according to any one of claims 1 to 4, characterized in that: The device further comprises: an operating pressure controller and an exhaust pressure controller; The operating pressure controller is connected to a side of the operating pipeline close to the carrier gas input end; wherein the operating pressure controller is used to control the pressure of the operating pipeline; The exhaust pressure controller is connected to a side of the exhaust pipeline close to the carrier gas input end; wherein, the exhaust pressure controller is used to control the pressure of the exhaust pipeline.

6. The device according to claim 1, characterized in that in, The gas delivery pipeline includes a first gas delivery pipeline and a second gas delivery pipeline; One end of the first gas delivery pipeline is connected to the input end of the solid and liquid process gas, and one end of the second gas delivery pipeline is connected to the input end of the gaseous process gas; The other ends of the first gas delivery pipeline and the second gas delivery pipeline are connected to the operation pipeline or the exhaust pipeline.

7. The device according to claim 6, characterized in that in, The first gas delivery pipeline includes: a carrier gas delivery pipeline, a process gas source delivery pipeline, a gas source dilution pipeline, a reaction gas source delivery pipeline and a reaction gas source exhaust pipeline; One end of the carrier gas delivery pipeline is connected to the carrier gas input end, and the other end is inserted into the bottom of the solid-liquid process gas source storage unit; One end of the process gas source delivery pipeline is inserted into the solid-liquid process gas source storage unit, and the other end is connected to one end of the gas source dilution pipeline; The other end of the gas source dilution pipeline is connected to the carrier gas input end; One end of the reaction gas source delivery pipeline is respectively connected to the other end of the process gas source delivery pipeline and one end of the gas source dilution pipeline, and the other end is connected to the operation pipeline or the exhaust pipeline; One end of the reaction gas source exhaust pipeline is connected to one end of the reaction gas source delivery pipeline, and the other end is connected to the waste gas treatment equipment.

8. The device according to claim 7, characterized in that The device further comprises: a carrier gas delivery flow controller, a gas source dilution flow controller and a reaction gas source delivery flow controller which are respectively arranged on the carrier gas delivery pipeline, the gas source dilution pipeline and the reaction gas source delivery pipeline.

9. The device according to claim 7, characterized in that The device further comprises: a linkage controller; The linkage controller includes a first control unit and a second control unit; the first control unit is arranged on the carrier gas delivery pipeline, and the second control unit is arranged on the process gas source delivery pipeline; The linkage controller is used to control the on / off of the carrier gas delivery pipeline and the process gas source delivery pipeline based on the first control unit and the second control unit.

10. A chemical vapor deposition device, characterized in that: The device comprises: a reaction chamber, an exhaust gas treatment device, a heating device, and a gas delivery device as described in any one of claims 1 to 9 above; The heating device is used to heat the reaction chamber to a target reaction temperature.

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