Semiconductor device

Abstract

The utility model relates to a semiconductor device, and the device is characterized in that a heating pedestal is disposed in a reaction chamber, the heating pedestal is provided with a bearing surface, the bearing surface is used for bearing a wafer, and the heating pedestal is used for heating the wafer; the isolation hood is arranged on the surface, deviating from the bearing surface, of the heating base and surrounds at least part of the heating base, and the isolation hood and the at least part of the surrounded heating base form a sealed cavity; the air disc is arranged in the sealing cavity and is of a hollow structure, and a plurality of air outlet holes are formed in the surface of the air disc; one end of the gas inlet pipeline is communicated with the gas disc, and the other end of the gas inlet pipeline is connected with a gas input source outside the reaction chamber; and the gas outlet pipeline is communicated with the sealing chamber and the outer part of the reaction chamber. The heat dissipation efficiency of the semiconductor device can be improved, and the situation that overheat protection is triggered due to the fact that the temperature of the heating base is too high is avoided.

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