Polycrystalline silicon reduction furnace with 70 pairs of rods
By using concentric circle arrangement of 70 pairs of electrode rods in the polysilicon reduction furnace and reasonably setting nozzles and exhaust pores, the problems of low output and high power consumption of the existing polysilicon reduction furnace are solved, and the effect of efficient production of high-quality polysilicon is achieved.
Patent Information
- Application Number
- CN202422690238.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-05
- Publication Date
- 2025-08-26
- Estimated Expiration
- 2034-11-05
AI Technical Summary
The current 60 pairs of rod polysilicon reduction furnaces have low production, low thermal radiation utilization and high power consumption, while the 72 pairs of rod polysilicon reduction furnaces have high production efficiency but unstable operation and poor polysilicon quality.
A 70 pair of rod polysilicon reduction furnace is designed. The electrode rods are arranged in concentric circles in 6 circles, and the number of electrode rods per circle increases in sequence, adopts a nine-phase layout, and the air field uniformity and temperature field uniformity are ensured by reasonably setting the nozzles and exhaust pores.
It improves production efficiency and produces polysilicon of better quality, while reducing operating power consumption and enhancing industry competitiveness.
Smart Images
Figure CN223271680U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of polysilicon reduction furnaces, in particular to a polysilicon reduction furnace with 70 pairs of rods. Background Art
[0002] Polycrystalline silicon, with its semiconductor properties, is a vital and high-quality semiconductor material. It is widely used in the electronics industry to manufacture semiconductor radios, tape recorders, refrigerators, color TVs, VCRs, and computers. Polycrystalline silicon is also the primary raw material for solar cells, enabling the production of various solar cell modules that convert solar energy into electricity. As a key renewable energy source that is both abundant and pollution-free, solar energy is a key area of support for various countries.
[0003] The modified Siemens process is the mainstream mature process for producing polysilicon at home and abroad. It uses trichlorosilane as raw material and reduces it with high-purity hydrogen on a high-purity silicon core under high-temperature conditions to generate polysilicon and deposit it on the silicon core to obtain polysilicon rod-shaped products. The reduction furnace is the core equipment of this process.
[0004] Currently, 60-pair-rod polysilicon reduction furnaces, along with a smaller number of 72-pair-rod polysilicon reduction furnaces, are widely used both domestically and internationally. 60-pair-rod polysilicon reduction furnaces have relatively low production output, low thermal radiation utilization, and relatively high power consumption. While 72-pair-rod polysilicon reduction furnaces offer high production efficiency, their operation is less stable, resulting in poorer polysilicon quality. Utility Model Content
[0005] In response to the shortcomings of the existing technology, the utility model provides a 70-pair-rod polysilicon reduction furnace, which has high production efficiency and can produce polysilicon of better quality. At the same time, the operating power consumption is relatively low and the industry competitiveness is strong.
[0006] To achieve the above objectives, the present invention provides the following technical solutions:
[0007] A 70-pair polysilicon reduction furnace, comprising:
[0008] a chassis, located inside the reduction furnace body; and
[0009] Electrode rods, 70 pairs in total, mounted on the chassis and used to heat the silicon core;
[0010] Among them, the 70 pairs of electrode rods are arranged into 6 circles in the form of concentric circles, and the number of electrode rods in each circle from the inside to the outside is 4 pairs of electrode rods, 7 pairs of electrode rods, 10 pairs of electrode rods, 13 pairs of electrode rods, 16 pairs of electrode rods and 20 pairs of electrode rods.
[0011] In one embodiment disclosed in the present application, the distance between two adjacent electrode rods in each circle of electrode rods is 245 mm, and the distance between two adjacent circles of electrode rods is 240-260 mm.
[0012] In one embodiment disclosed in the present application, the 70 pairs of electrode rods are arranged in a nine-phase system, that is, divided into nine groups, each group corresponding to one phase current.
[0013] In one embodiment disclosed in the present application, from the inside to the outside, the four pairs of electrode rods in the first circle and the four consecutively adjacent pairs of electrode rods in the 20 pairs in the sixth circle are the first group;
[0014] The 7 pairs of electrode rods in the second circle are the second group;
[0015] Among the 10 pairs of electrode rods in the third circle, the 8 consecutive adjacent pairs of electrode rods are the third group;
[0016] The remaining two pairs of electrode rods in the third circle and the six pairs of electrode rods in the fourth circle form the fourth group;
[0017] The remaining 7 pairs of electrode rods in the fourth circle are the fifth group;
[0018] Among the 16 pairs of electrode rods in the fifth circle, the eight consecutive adjacent pairs of electrode rods are the sixth group;
[0019] The remaining 8 pairs of electrode rods in the fifth circle are the seventh group;
[0020] Among the remaining 16 pairs of electrode rods in the sixth circle, the eight consecutive adjacent pairs of electrode rods are the eighth group;
[0021] The last 8 pairs of electrodes in the sixth circle are the ninth group.
[0022] In one embodiment disclosed in the present application, a circle of nozzles is provided on the chassis between two adjacent circles of electrode rods;
[0023] Each circle of nozzles includes a plurality of nozzles uniformly distributed around the circumference.
[0024] In one embodiment disclosed in the present application, the number of nozzles in each circle of nozzles is 8, 9, 9, 14 and 24, from the inside to the outside.
[0025] In one embodiment disclosed in the present application, a nozzle is further provided at the center of the chassis.
[0026] In one embodiment disclosed in the present application, the inner diameter of the nozzle is 40 mm.
[0027] In one embodiment disclosed in the present application, the chassis is provided with an exhaust hole;
[0028] A plurality of tail gas holes are evenly distributed around the circumference of the outermost electrode rod.
[0029] In one embodiment disclosed in the present application, there are 8 exhaust holes evenly distributed around the circumference of the outermost electrode rod;
[0030] The inner diameter of each tail gas hole is 125 mm.
[0031] Compared with the prior art, the beneficial effects of the present invention are:
[0032] 1. Compared with the 60-pair-rod polysilicon reduction furnace, the present invention has more electrodes and can significantly improve production efficiency; and compared with the 72-pair-rod polysilicon reduction furnace, the present invention can produce silicon rods of better quality.
[0033] 2. Dividing the 70 pairs of electrode rods into nine groups of approximately equal number from the inside to the outside can balance the current in each group, so that the silicon core on each circle of electrode rods is in a suitable temperature field, thereby further ensuring the growth quality of the silicon rods.
[0034] 3. By setting the number and position of the nozzles, it is beneficial to achieve uniform air intake in the reduction furnace, thereby ensuring the growth quality of the silicon rods and improving the production efficiency of the reduction furnace.
[0035] 4. The 8 exhaust holes evenly distributed around the circumference can effectively reduce the influence of gas phase deviation, thereby ensuring the uniformity of the gas field. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0037] Figure 1 It is a structural diagram of the present utility model. DETAILED DESCRIPTION
[0038] Hereinafter, only certain exemplary embodiments are briefly described. As will be appreciated by those skilled in the art, the described embodiments may be modified in various ways without departing from the spirit or scope of the present invention. Therefore, the drawings and description are to be regarded as illustrative in nature and not restrictive.
[0039] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
[0040] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of this utility model, "plurality" means two or more, unless otherwise specifically defined.
[0041] In this utility model, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; they can refer to direct connection or indirect connection through an intermediate medium; they can refer to internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on specific circumstances.
[0042] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.
[0043] The disclosure below provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are only examples and are not intended to limit the present invention.
[0044] The embodiments of the present invention are described in detail below with reference to the accompanying drawings.
[0045] See also Figure 1 As shown, the utility model provides a 70-pair polysilicon reduction furnace, comprising:
[0046] Chassis 1, arranged in the reduction furnace body (not shown); and
[0047] Electrode rods 2, 70 pairs in total, mounted on the chassis 1 and used to heat the silicon core (not shown);
[0048] Among them, 70 pairs of electrode rods 2 are arranged into 6 circles in the form of concentric circles, and the number of electrode rods in each circle from the inside to the outside is 4 pairs of electrode rods, 7 pairs of electrode rods, 10 pairs of electrode rods, 13 pairs of electrode rods, 16 pairs of electrode rods and 20 pairs of electrode rods.
[0049] Specifically, the rod spacing between two adjacent electrode rods 2 in each circle of electrode rods is 245 mm, and the circle spacing between two adjacent circles of electrode rods is 240-260 mm. In the 72-pair rod polysilicon reduction furnace in the prior art, the rod spacing is 230 mm and the circle spacing is 230 mm. Both the rod spacing and the circle spacing are relatively small, which will cause the gas phase temperature to be relatively high, which will easily affect the quality of the silicon rods. In the present utility model, both the rod spacing and the circle spacing are larger, which is conducive to the uniform distribution of the temperature field and the gas field, thereby ensuring the later growth quality of the silicon rods uniformly distributed in the reduction furnace. That is to say, compared with the 60-pair rod polysilicon reduction furnace, the present utility model has more electrodes and can significantly improve production efficiency; and compared with the 72-pair rod polysilicon reduction furnace, the present utility model can produce silicon rods of better quality.
[0050] The 70 pairs of electrode rods 2 are arranged in a nine-phase system, that is, they are divided into nine groups, each group corresponding to one phase current. Specifically, from the inside to the outside, the 4 pairs of electrode rods in the first circle and the 4 consecutive adjacent pairs of electrode rods in the 20 pairs in the sixth circle are the first group, recorded as B1 phase; the 7 pairs of electrode rods in the second circle are the second group, recorded as B2 phase; among the 10 pairs of electrode rods in the third circle, the 8 consecutive adjacent pairs of electrode rods are the third group, recorded as C1 phase; the remaining 2 pairs of electrode rods in the third circle and the 6 consecutive adjacent pairs of electrode rods in the fourth circle are the fourth group, recorded as C2 phase; the remaining 7 pairs of electrode rods in the fourth circle are the fifth group, recorded as A3 phase; among the 16 pairs of electrode rods in the fifth circle, the 8 consecutive adjacent pairs of electrode rods are the sixth group, recorded as B3 phase; the remaining 8 pairs of electrode rods in the fifth circle are the seventh group, recorded as A1 phase; among the remaining 16 pairs of electrode rods in the sixth circle, the 8 consecutive adjacent pairs of electrode rods are the eighth group, recorded as A2 phase; and the last 8 pairs of electrode rods in the sixth circle are the ninth group, recorded as C3 phase. Dividing the 70 pairs of electrode rods 2 into nine groups of approximately equal number from the inside to the outside can balance the current in each group, so that the silicon core on each circle of electrode rods is in a suitable temperature field, thereby further ensuring the growth quality of the silicon rods.
[0051] A circle of nozzles 3 is provided on the chassis 1 between two adjacent circles of electrode rods. Each circle of nozzles 3 includes multiple nozzles evenly distributed around the circumference. Specifically, from the innermost circle to the outermost circle, the number of nozzles in each circle 3 is 8, 9, 9, 14, and 24, respectively. That is, 8 nozzles are provided between the first and second circles of electrode rods; 9 nozzles are provided between the second and third circles of electrode rods; 9 nozzles are provided between the third and fourth circles of electrode rods; 14 nozzles are provided between the fourth and fifth circles of electrode rods; and 24 nozzles are provided between the fifth and sixth circles of electrode rods. This ensures a uniform gas field, thereby improving the growth quality of the silicon rods.
[0052] In addition, a nozzle 3 is located at the center of the chassis 1 to further ensure uniformity of the gas field. The denser the electrode rods 2, the more nozzles 3 are required. By adjusting the number and position of nozzles, uniform air intake into the reduction furnace is achieved, thereby ensuring the growth quality of the silicon rods and improving the production efficiency of the reduction furnace.
[0053] In this embodiment, the inner diameter of the nozzle 3 is 40 mm.
[0054] The chassis 1 is provided with multiple exhaust holes 4, evenly distributed around the circumference of the outermost electrode rod 2. Specifically, there are eight exhaust holes 4 evenly distributed around the circumference of the outermost electrode rod 2, each with an inner diameter of 125 mm. The eight evenly distributed exhaust holes 4 effectively reduce the effects of gas phase drift, thereby ensuring a uniform gas field.
[0055] To sum up, the utility model sets the number and position of electrode rods, nozzles and exhaust holes, fully utilizes the heat radiation between the electrode rods, effectively solves the problems of limited output, high power consumption and poor product quality of existing polysilicon reduction furnaces, thereby greatly reducing the production cost of polysilicon.
[0056] The above embodiments are only preferred embodiments of the present invention and are not limitations on the technical solutions of the present invention. Any technical solution that can be implemented on the basis of the above embodiments without creative work should be deemed to fall within the scope of protection of the patent of the present invention.
Claims
1. A 70-pair polysilicon reduction furnace, characterized in that: include: The chassis is arranged inside the reduction furnace body; and Electrode rods, 70 pairs in total, mounted on the chassis and used to heat the silicon core; Among them, the 70 pairs of electrode rods are arranged into 6 circles in the form of concentric circles, and the number of electrode rods in each circle from the inside to the outside is 4 pairs of electrode rods, 7 pairs of electrode rods, 10 pairs of electrode rods, 13 pairs of electrode rods, 16 pairs of electrode rods and 20 pairs of electrode rods.
2. The 70-pair polysilicon reduction furnace according to claim 1, characterized in that: The distance between two adjacent electrode rods in each circle of electrode rods is 245 mm, and the distance between two adjacent circles of electrode rods is 240-260 mm.
3. The 70-pair polysilicon reduction furnace according to claim 1 or 2, characterized in that: The 70 pairs of electrode rods are arranged in a nine-phase system, that is, they are divided into nine groups, each group corresponding to one phase current.
4. The 70-pair polysilicon reduction furnace according to claim 3, characterized in that: From the inside to the outside, the four pairs of electrode rods in the first circle and the four consecutive pairs of electrode rods in the 20 pairs in the sixth circle are the first group; The 7 pairs of electrode rods in the second circle are the second group; Among the 10 pairs of electrode rods in the third circle, the 8 consecutive adjacent pairs of electrode rods are the third group; The remaining two pairs of electrode rods in the third circle and the six pairs of electrode rods in the fourth circle form the fourth group; The remaining 7 pairs of electrode rods in the fourth circle are the fifth group; Among the 16 pairs of electrode rods in the fifth circle, the eight consecutive adjacent pairs of electrode rods are the sixth group; The remaining 8 pairs of electrode rods in the fifth circle are the seventh group; Among the remaining 16 pairs of electrode rods in the sixth circle, the eight consecutive adjacent pairs of electrode rods are the eighth group; The last 8 pairs of electrodes in the sixth circle are the ninth group.
5. The 70-pair polysilicon reduction furnace according to claim 1 or 4, characterized in that: A circle of nozzles is provided on the chassis between two adjacent circles of electrode rods; Each circle of nozzles includes a plurality of nozzles uniformly distributed around the circumference.
6. The 70-pair polysilicon reduction furnace according to claim 5, characterized in that: From the inside to the outside, the number of nozzles in each circle is 8, 9, 9, 14 and 24 respectively.
7. The 70-pair polysilicon reduction furnace according to claim 6, characterized in that: A nozzle is also provided at the center of the chassis.
8. The 70-pair polysilicon reduction furnace according to claim 6 or 7, characterized in that: The inner diameter of the nozzle is 40 mm.
9. The 70-pair polysilicon reduction furnace according to claim 1, characterized in that: The chassis is provided with an exhaust hole; A plurality of tail gas holes are evenly distributed around the circumference of the outermost electrode rod.
10. The 70-pair polysilicon reduction furnace according to claim 9, characterized in that: There are 8 exhaust holes evenly distributed around the circumference of the outermost electrode rod; The inner diameter of each tail gas hole is 125 mm.