Multi-channel radio frequency current detection device applied to wafer production equipment

Abstract

The utility model discloses a multichannel radio frequency current detection device applied to wafer production equipment. The multichannel radio frequency current detection device comprises a channel selector and a detection circuit, the circuit output end is connected with the input end of the selector; the output end of the selector is connected with wafer production equipment; the detection circuit detects a radio frequency current signal, converts the radio frequency current signal into a voltage signal and outputs the voltage signal to the channel selector, and comprises a detection sensor, a connection cable and a signal transmission circuit; the detection sensor detects the radio frequency current signal and converts the signal into a voltage signal; the cable transmits the voltage signal to the signal transmission circuit; the signal transmission circuit comprises a signal receiving circuit and a signal conversion output circuit; the receiving circuit is used for receiving the voltage signal; the conversion output circuit is used for amplifying the voltage signal and outputting the voltage signal to the channel selector; the device can be matched with multi-channel 6-inch PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, select different numbers of channels, detect whether a radio frequency power supply is input into a cavity or not in real time and determine whether gas is input into the cavity or not, so that the wafer production quality is ensured, and the production waste is reduced.

Description

Technical Field

[0001] The utility model relates to the field of plasma enhanced chemical vapor deposition equipment, in particular to a multi-channel radio frequency current detection device applied to wafer production equipment. Background Art

[0002] In the semiconductor production process, plasma chemical vapor deposition (PECVD) equipment is a device that uses radio frequency power to ionize gaseous substances of certain components to form plasma, promote chemical reactions, and deposit thin film materials. In this process, the chemical reaction in the chamber is generated by the intake of radio frequency power. The radio frequency power is input into the reaction chamber through a power matcher and an radio frequency distributor. The control system of the equipment needs to determine whether the cavity where the wafer is placed receives the power of the radio frequency power supply and make a judgment on whether to execute the next action. Existing PECVD equipment only has a current acquisition device in the 12-inch equipment, while the 6-inch equipment lacks a corresponding current acquisition device. It cannot detect whether each channel has radio frequency output, and cannot judge the status of each radio frequency in real time. It directly inputs gas into the chamber. At this time, if one channel has no radio frequency output, then the corresponding wafer on this channel will be damaged, resulting in production waste. Utility Model Content

[0003] The utility model provides a multi-channel radio frequency current detection device for wafer production equipment to overcome the technical problem that existing 6-inch equipment lacks a radio frequency current detection device, cannot judge the radio frequency power supply status in real time, and is prone to inputting gas into the production equipment chamber when there is no radio frequency output, causing damage to the wafer.

[0004] In order to achieve the above purpose, the technical solution of the utility model is:

[0005] A multi-channel radio frequency current detection device for wafer production equipment includes: a channel selector and multiple independent detection circuits;

[0006] The output ends of the multiple independent detection circuits are connected to the multiple input ports of the channel selector; the multiple output ports of the channel selector are connected to wafer production equipment;

[0007] The channel selector is used to provide a connection channel between the wafer production equipment and the detection circuit, and the number of the connection channels can be adjusted as needed; the detection circuit is used to detect the radio frequency current signal and convert the radio frequency current signal into a voltage signal and output it to the channel selector;

[0008] The detection circuit includes a detection sensor, a connecting cable and a signal transmission circuit;

[0009] The detection sensor is a coil inductor, which is used to detect the radio frequency current signal in the device and convert the radio frequency current signal into a voltage signal; the connecting cable is used to transmit the voltage signal to the signal transmission circuit;

[0010] The signal transmission circuit includes a signal receiving circuit and a signal conversion output circuit; the signal receiving circuit is used to receive the voltage signal transmitted by the detection sensor; the signal conversion output circuit is used to amplify the voltage signal and output it to the channel selector.

[0011] Furthermore, the signal receiving circuit includes a first resistor R1, a second resistor R2, a first capacitor C1, a second capacitor C2, a first diode D1, and a second diode D2;

[0012] One end of the first resistor R1 is respectively connected to the positive output electrode of the detection sensor and one end of the first capacitor C1, and the other end of the first resistor R1 is respectively connected to the negative output electrode of the detection sensor and the positive electrode of the first diode D1; the other end of the first capacitor C1 is respectively connected to the negative electrode of the first diode D1 and the positive electrode of the second diode D2; one end of the second capacitor C2 is respectively connected to the negative electrode of the second diode D2 and one end of the second resistor R2; the other end of the second capacitor C2 is respectively connected to the positive electrode of the first diode D1 and the other end of the second capacitor C2.

[0013] Furthermore, the signal conversion output circuit includes a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a third diode D3, a third capacitor C3, a differential comparator U1 and a comparator power supply;

[0014] One end of the third resistor R3 is respectively connected to one end of the second resistor R2 and the cathode of the third diode D3; the cathode of the third diode D3 is respectively connected to one end of the third capacitor C3 and the negative input terminal of the differential comparator U1; the anode of the third diode D3 is respectively connected to the other end of the third capacitor C3 and the negative power supply terminal of the differential comparator U1; the positive power supply terminal of the differential comparator U1 is respectively connected to one end of the fifth resistor R5 and the comparator power supply; the positive input terminal of the differential comparator U1 is respectively connected to one end of the fourth resistor R4, the other end of the fifth resistor R5 and one end of the sixth resistor R6 and the said, the output end of the differential comparator U1 is respectively connected to the other end of the fourth resistor R4 and the wafer production equipment; the other end of the sixth resistor R6 is grounded, and the negative power supply terminal of the differential comparator U1 is grounded.

[0015] Furthermore, the inductance of the coil inductor is 1.5uH±15%.

[0016] Furthermore, the first resistor R1 is 51Ω, the second resistor R2 is 100KΩ, and the first capacitor C1 and the second capacitor C2 are 1nF / 100V.

[0017] Furthermore, the first diode D1 and the second diode D2 are of type 1N4148.

[0018] Furthermore, the third resistor R3 is 10KΩ, the fourth resistor R4 is 1MΩ, the fifth resistor R5 is 10MΩ, the sixth resistor R6 is 20KΩ, and the third capacitor C3 is 1nF / 100V.

[0019] Furthermore, the third diode D3 is a voltage stabilizing diode of model 1N5231B.

[0020] Furthermore, the model of the differential comparator U1 is LM339.

[0021] Furthermore, the number of the connection channels is selected from 4 to 8.

[0022] This utility model designs an RF current acquisition device that matches 6-inch PECVD equipment. When the equipment's control system issues an RF power output signal, the device can detect in real time whether the RF power is input into the chamber and transmit the detected signal to the control system. The control system determines whether to input gas into the chamber by judging whether there is RF current input on the channel. This ensures wafer production quality and reduces production waste. At the same time, this device provides 8 detection channels, which can match multi-channel 6-inch PECVD equipment. Different numbers of channels can be selected according to different needs, saving time and reducing waste. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0024] Figure 1 This is a circuit diagram of a multi-channel radio frequency current detection device used in wafer production equipment according to the present utility model;

[0025] Figure 2 This is a schematic diagram of the detection sensor coil inductance of the utility model;

[0026] Figure 3 This is a circuit diagram of the signal receiving circuit of the utility model;

[0027] Figure 4 This is a circuit diagram of the signal conversion output circuit of the utility model;

[0028] Figure 5 This is the overall connection framework diagram of the utility model. DETAILED DESCRIPTION

[0029] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0030] This embodiment provides a multi-channel radio frequency current detection device for wafer production equipment, such as Figure 1 and Figure 5 As shown, it includes: a channel selector and a plurality of independent detection circuits;

[0031] The output ends of the multiple independent detection circuits are connected to the multiple input ports of the channel selector; the multiple output ports of the channel selector are connected to wafer production equipment;

[0032] The channel selector is used to provide a connection channel between the wafer production equipment and the detection circuit, and the number of the connection channels can be adjusted as needed; the detection circuit is used to detect the radio frequency current signal and convert the radio frequency current signal into a voltage signal and output it to the channel selector;

[0033] The detection circuit includes a detection sensor, a connecting cable and a signal transmission circuit;

[0034] The detection sensor is a coil inductor, which is used to detect the radio frequency current signal in the device and convert the radio frequency current signal into a voltage signal; the connecting cable is used to transmit the voltage signal to the signal transmission circuit;

[0035] The signal transmission circuit includes a signal receiving circuit and a signal conversion output circuit; the signal receiving circuit is used to receive the voltage signal transmitted by the detection sensor; the signal conversion output circuit is used to amplify the voltage signal and output it to the channel selector.

[0036] Specifically, the detection sensor in the detection circuit is a coil inductor, such as Figure 2As shown, after the radio frequency current in the channel is detected, according to Faraday's law of electromagnetic induction, the coil inductance will generate an electromotive force, converting the current signal into a voltage signal. In this embodiment, an SMA coaxial cable is selected as the connecting cable, and the voltage signal is transmitted to the signal transmission circuit through the SMA coaxial cable. The voltage signal is amplified by the signal transmission circuit and output to the channel selector. According to actual conditions, multiple detection circuits are connected to the wafer production equipment through the channel selector.

[0037] In a specific embodiment, Figure 3 As shown, the signal receiving circuit includes a first resistor R1, a second resistor R2, a first capacitor C1, a second capacitor C2, a first diode D1, and a second diode D2;

[0038] One end of the first resistor R1 is respectively connected to the positive output electrode of the detection sensor and one end of the first capacitor C1, and the other end of the first resistor R1 is respectively connected to the negative output electrode of the detection sensor and the positive electrode of the first diode D1; the other end of the first capacitor C1 is respectively connected to the negative electrode of the first diode D1 and the positive electrode of the second diode D2; one end of the second capacitor C2 is respectively connected to the negative electrode of the second diode D2 and one end of the second resistor R2; the other end of the second capacitor C2 is respectively connected to the positive electrode of the first diode D1 and the other end of the second capacitor C2.

[0039] The signal receiving circuit in this solution is a frequency multiplication circuit, which can increase the frequency of the input signal to ensure the accuracy and stability of data transmission.

[0040] In a specific embodiment, Figure 4 As shown, the signal conversion output circuit includes a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a third diode D3, a third capacitor C3, a differential comparator U1 and a comparator power supply;

[0041] One end of the third resistor R3 is respectively connected to one end of the second resistor R2 and the cathode of the third diode D3; the cathode of the third diode D3 is respectively connected to one end of the third capacitor C3 and the negative input terminal of the differential comparator U1; the anode of the third diode D3 is respectively connected to the other end of the third capacitor C3 and the negative power supply terminal of the differential comparator U1; the positive power supply terminal of the differential comparator U1 is respectively connected to one end of the fifth resistor R5 and the comparator power supply; the positive input terminal of the differential comparator U1 is respectively connected to one end of the fourth resistor R4, the other end of the fifth resistor R5 and one end of the sixth resistor R6 and the device, and the output end of the differential comparator U1 is respectively connected to the other end of the fourth resistor R4 and the device; the other end of the sixth resistor R6 is grounded, and the negative power supply terminal of the differential comparator U1 is grounded.

[0042] In this solution, the signal conversion output circuit is a differential circuit, which can amplify the voltage signal and effectively improve the accuracy and stability of the signal.

[0043] In a specific embodiment, the inductance of the coil inductor is 1.5uH±15%.

[0044] The coil inductance is set as the detection sensor, and the inductance is set to 1.5uH±15%. This inductance can detect the most accurate current and output voltage to ensure that the components on the back-end signal transmission circuit are not damaged.

[0045] In a specific embodiment, the first resistor R1 is 51Ω, the second resistor R2 is 100KΩ, and the first capacitor C1 and the second capacitor C2 are 1nF / 100V.

[0046] Setting the values ​​of resistance and capacitance to fixed values ​​can ensure the stability of the voltage in the circuit, ensuring that the components in the circuit are not damaged while achieving voltage transmission.

[0047] In a specific embodiment, the first diode D1 and the second diode D2 are of type IN4148.

[0048] The 1N4148 is a small, high-speed switching diode that switches quickly and is widely used in circuits with higher signal frequencies. It is a small-signal, high-frequency diode that is very easy to obtain, inexpensive, and extremely versatile. Using this type of diode can reduce costs while achieving basic functions.

[0049] In a specific embodiment, the third resistor R3 is 10KΩ, the fourth resistor R4 is 1MΩ, the fifth resistor R5 is 10MΩ, the sixth resistor R6 is 20KΩ, and the third capacitor C3 is 1nF / 100V.

[0050] Setting the values ​​of resistance and capacitance to fixed values ​​can ensure the stability of the voltage in the circuit, ensure that the components in the circuit are not damaged, and at the same time achieve voltage transmission and reduce voltage loss.

[0051] In a specific embodiment, the third diode D3 is a voltage stabilizing diode of model IN5231B.

[0052] The voltage stabilizing diode plays the role of voltage stabilization in the circuit. It uses the characteristic that after the diode is reversely broken down, the reverse voltage does not change with the reverse current within a certain reverse current range. At the same time, 1N5231B is selected because it is a voltage stabilizing diode that is very easy to obtain, low-priced, and extremely versatile. Using this diode can reduce costs while achieving basic functions.

[0053] In a specific embodiment, the differential comparator U1 is a LM339.

[0054] This type of comparator has a wide range of power supply voltage options, a wide limit on the internal resistance of the comparison signal source, and the output terminal potential can be flexibly and conveniently selected. It is widely used in amplifiers, filters, integrators and other circuits. It can amplify the voltage in the circuit so that the voltage can match the voltage of the production equipment.

[0055] In a specific embodiment, the number of the connecting channels is selected from 4 to 8.

[0056] The device has 8 RF detection channels and can simultaneously detect the output status of up to 8 RF currents. It can be used with multi-channel equipment (PECVD).

[0057] When used on a four-channel device, connect 4 detection channels and connect them to the detection circuit through 4 SMA coaxial cables. When used on a six-station device, connect 6 detection channels and connect them to the detection circuit through 6 SMA coaxial cables. When used on an eight-station device, connect 8 detection channels and connect them to the detection circuit through 8 SMA coaxial cables. At the same time, if used on a 4-station or 6-station device, the idle and unconnected lines can be used as backup channels in case of damage, without the need for re-repair, saving time and reducing waste.

[0058] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A multi-channel radio frequency current detection device for wafer production equipment, characterized in that: include: Channel selector and multiple independent detection circuits; The output ends of the multiple independent detection circuits are connected to the multiple input ports of the channel selector; the multiple output ports of the channel selector are connected to wafer production equipment; The channel selector is used to provide connection channels between the wafer production equipment and the detection circuit, and can adjust the number of the connection channels as needed; The detection circuit is used to detect the radio frequency current signal and convert the radio frequency current signal into a voltage signal and output it to the channel selector; The detection circuit includes a detection sensor, a connecting cable and a signal transmission circuit; The detection sensor is a coil inductor, which is used to detect the radio frequency current signal in the device and convert the radio frequency current signal into a voltage signal; the connecting cable is used to transmit the voltage signal to the signal transmission circuit; The signal transmission circuit includes a signal receiving circuit and a signal conversion output circuit; the signal receiving circuit is used to receive the voltage signal transmitted by the detection sensor; the signal conversion output circuit is used to amplify the voltage signal and output it to the channel selector.

2. The multi-channel radio frequency current detection device for wafer production equipment according to claim 1, characterized in that: The signal receiving circuit includes a first resistor R1, a second resistor R2, a first capacitor C1, a second capacitor C2, a first diode D1, and a second diode D2; One end of the first resistor R1 is respectively connected to the positive output electrode of the detection sensor and one end of the first capacitor C1, and the other end of the first resistor R1 is respectively connected to the negative output electrode of the detection sensor and the positive electrode of the first diode D1; the other end of the first capacitor C1 is respectively connected to the negative electrode of the first diode D1 and the positive electrode of the second diode D2; one end of the second capacitor C2 is respectively connected to the negative electrode of the second diode D2 and one end of the second resistor R2; the other end of the second capacitor C2 is respectively connected to the positive electrode of the first diode D1 and the other end of the second capacitor C2.

3. The multi-channel radio frequency current detection device for wafer production equipment according to claim 2, characterized in that: The signal conversion output circuit includes a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a third diode D3, a third capacitor C3, a differential comparator U1 and a comparator power supply; One end of the third resistor R3 is respectively connected to one end of the second resistor R2 and the cathode of the third diode D3; the cathode of the third diode D3 is respectively connected to one end of the third capacitor C3 and the negative input terminal of the differential comparator U1; the anode of the third diode D3 is respectively connected to the other end of the third capacitor C3 and the negative power supply terminal of the differential comparator U1; the positive power supply terminal of the differential comparator U1 is respectively connected to one end of the fifth resistor R5 and the comparator power supply; the positive input terminal of the differential comparator U1 is respectively connected to one end of the fourth resistor R4, the other end of the fifth resistor R5 and one end of the sixth resistor R6 and the said, the output end of the differential comparator U1 is respectively connected to the other end of the fourth resistor R4 and the wafer production equipment; the other end of the sixth resistor R6 is grounded, and the negative power supply terminal of the differential comparator U1 is grounded.

4. The multi-channel radio frequency current detection device for wafer production equipment according to claim 1, characterized in that: The inductance of the coil inductor is 1.5uH±15%.

5. The multi-channel radio frequency current detection device for wafer production equipment according to claim 2, characterized in that: The first resistor R1 is 51Ω, the second resistor R2 is 100KΩ, and the first capacitor C1 and the second capacitor C2 are 1nF / 100V.

6. The multi-channel radio frequency current detection device for wafer production equipment according to claim 2, characterized in that: The first diode D1 and the second diode D2 are of type 1N4148.

7. The multi-channel radio frequency current detection device for wafer production equipment according to claim 3, characterized in that: The third resistor R3 is 10KΩ, the fourth resistor R4 is 1MΩ, the fifth resistor R5 is 10MΩ, the sixth resistor R6 is 20KΩ, and the third capacitor C3 is 1nF / 100V.

8. The multi-channel radio frequency current detection device for wafer production equipment according to claim 3, characterized in that: The third diode D3 is a voltage stabilizing diode of model 1N5231B.

9. The multi-channel radio frequency current detection device for wafer production equipment according to claim 3, characterized in that: The model of the differential comparator U1 is LM339.

10. The multi-channel radio frequency current detection device for wafer production equipment according to claim 1, characterized in that: The number of the connecting channels is selected from 4 to 8.

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