Semiconductor frame structure, semiconductor power device and semiconductor module
By setting solid partitions and/or opening notches on the back of the slide stage of the semiconductor frame, the problem of poor bonding between the edge of the heat sink and the plastic seal material is solved, stress dispersion is achieved, and product reliability and service life are improved.
Patent Information
- Application Number
- CN202422700239.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-06
- Publication Date
- 2025-08-26
- Estimated Expiration
- 2034-11-06
AI Technical Summary
The heat sink edges of existing semiconductor frames have poor bonding properties with plastic sealing materials, which leads to prone to cracking of plastic sealing bodies during high and low temperature cycle tests, affecting product reliability and service life.
A semi-corrosion area is provided on the back of the slide stage of the semiconductor frame, and a solid partition and/or a notch are provided on this area to enhance the bonding of the heat sink and the plastic sealing material and disperse stress.
Effectively disperse stress, avoid cracking of plastic seals, and improve the reliability and service life of the product in high and low temperature cycle testing.
Smart Images
Figure CN223273286U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor frame structure, a semiconductor power device, and a semiconductor module. Background Art
[0002] With the continuous development of high-power electronic devices, the requirements for semiconductor power devices are becoming increasingly higher. Among them, the semiconductor frame is the basis of semiconductor power device packaging. It can not only provide mechanical support for the chip, but also realize electrical connection between the chip and external components.
[0003] To prevent chip overheating and device performance degradation, some semiconductor frames are equipped with heat sinks. Existing semiconductor frames with heat sinks are all flat, bare copper frames on the front and "stepped" heat sinks on the back. This design suffers from poor adhesion between the heat sink edge and the plastic encapsulation compound during plastic encapsulation, making it difficult to withstand sufficient product stress and deformation. During subsequent reliability verification, the plastic encapsulation often cracks at the edge of the heat sink on the back during high- and low-temperature cycling tests, seriously impacting subsequent product use. Utility Model Content
[0004] In view of this, the embodiments of the present application provide a semiconductor frame structure, a semiconductor power device and a semiconductor module, which can improve the structure of the semiconductor frame so that the stress distribution of the heat sink and the plastic packaging material is no longer concentrated, thereby improving the reliability and service life of the product.
[0005] In a first aspect, an embodiment of the present application provides a semiconductor frame structure, comprising: a wafer carrier and a heat sink;
[0006] The heat sink is arranged on the back side of the wafer stage;
[0007] The wafer stage includes a semi-corroded area; wherein the semi-corroded area is an area of the wafer stage that is not covered by the heat sink;
[0008] At least one physical partition is provided on the semi-corroded area and / or at least one notch is opened on the semi-corroded area; wherein, the physical partition is connected to the heat sink; and the notch is connected to the heat sink.
[0009] In some embodiments, when at least one of the physical partitions is provided on the semi-corroded area and at least one of the gaps is opened on the semi-corroded area, the physical partitions and the gaps are staggered.
[0010] In some embodiments, the thickness of the physical partition is 50%-100% of the thickness of the heat sink.
[0011] In some embodiments, the maximum width of the physical partition is 50%-100% of the width of the semi-corroded region where the physical partition is currently located;
[0012] The maximum length of the physical partition is 10%-50% of the length of the semi-corrosion area where the physical partition is currently located.
[0013] In some embodiments, the opening of the notch faces one side of the heat sink; and the thickness of the notch is 50%-100% of the thickness of the semi-corroded region.
[0014] In some embodiments, the maximum width of the notch is 50%-100% of the width of the semi-corroded region where the notch is currently located;
[0015] The maximum length of the notch is 10%-50% of the length of the semi-corrosion region where the notch is currently located.
[0016] In some embodiments, the cross-sectional shape of the solid partition is polygonal, arc-shaped or sawtooth-shaped.
[0017] In some embodiments, the cross-sectional shape of the notch is polygonal, arc-shaped, or sawtooth-shaped.
[0018] In a second aspect, an embodiment of the present application provides a semiconductor power device, comprising: a chip, the above-mentioned semiconductor frame structure and a plastic package, wherein the chip is arranged on the semiconductor frame structure, and the plastic package is coated on the chip and the semiconductor frame structure.
[0019] In a third aspect, an embodiment of the present application provides a semiconductor module, which includes the above-mentioned semiconductor power device.
[0020] The embodiments of the present application have the following beneficial effects: in the present application, a physical partition is provided on the semi-corroded area and / or a notch is opened on the semi-corroded area, and the physical partition is connected to the heat sink; the notch is connected to the heat sink, so that after the semiconductor frame and the chip are plastic-sealed, the bonding between the edge of the heat sink and the plastic sealing material is strengthened, the stress is effectively dispersed, and the problem of cracking of the plastic sealing body caused by stress concentration is avoided. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.
[0022] Figure 1The figure shows a schematic structural diagram of the front side (chip carrier surface) of a semiconductor frame structure in the prior art;
[0023] Figure 2 The figure shows a schematic structural diagram of the reverse side (heat sink side) of the semiconductor frame structure in the prior art;
[0024] Figure 3 A schematic diagram of the three-dimensional structure of a semiconductor frame structure in the prior art is shown;
[0025] Figure 4 A first structural schematic diagram of a semiconductor frame structure according to an embodiment of the present application is shown;
[0026] Figure 5 A second structural schematic diagram of the semiconductor frame structure according to an embodiment of the present application is shown;
[0027] Figure 6 A third structural schematic diagram of the semiconductor frame structure according to an embodiment of the present application is shown;
[0028] Figure 7 A fourth structural schematic diagram of the semiconductor frame structure according to an embodiment of the present application is shown;
[0029] Figure 8 A fifth structural schematic diagram of the semiconductor frame structure according to an embodiment of the present application is shown.
[0030] Description of main component symbols:
[0031] 100-carrier; 200-heat sink; 300-semi-corrosion area; 400-pin; 500 (500a, 500b, 500c, 500d, 500e, 500f)-solid partition; 600 (600a, 600b, 600c, 600d, 600e, 600f, 600g, 600h)-notch. DETAILED DESCRIPTION
[0032] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments.
[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, each embodiment of the present application will be described in detail below with reference to the accompanying drawings. However, it will be understood by those skilled in the art that in each embodiment of the present application, many technical details are proposed in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present application can be implemented. The division of the following embodiments is for convenience of description and should not constitute any limitation on the specific implementation of the present application. The various embodiments can be combined with each other and referenced to each other under the premise of no contradiction.
[0034] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. Conversely, when an element is referred to as being "directly on" another element, there is no intermediate element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only.
[0035] In this application, unless otherwise expressly specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal connections between two components or interactions between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on specific circumstances.
[0036] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. Throughout the description of this application, "plurality" means two or more, unless otherwise specifically defined.
[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. The terms used in the template description herein are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.
[0038] The following describes some embodiments of the present application in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.
[0039] In the field of semiconductor chip packaging, especially in chip packaging using plastic packaging materials as filling materials, the chip is very sensitive to TC high and low temperature cycle tests. Especially for surface mount chip packaging, these chips need to undergo moisture sensitivity level (MSL) pretreatment tests before high and low temperature cycle tests. Figure 1-Figure 3 As shown, the existing semiconductor frames including heat sinks 200 all have a wafer stage 100 on the front and a "step" type heat sink 200 on the back. During the manufacturing process of semiconductor power devices, the chip, wafer stage 100 and heat sink 200 are packaged together, mainly using materials such as epoxy resin (Epoxy Molding Compound, EMC) to wrap these components to protect the internal electronic components from environmental influences such as moisture, mechanical damage, etc. This design of the prior art is likely to cause poor bonding between the edge of the heat sink 200 on the back of the frame and the plastic molding compound during plastic molding, making it difficult to withstand sufficient product stress deformation, resulting in cracking of the plastic molding body during high-temperature and low-temperature cycle testing, seriously affecting the reliability and service life of the product. Therefore, it is necessary to improve the structure of the semiconductor frame so that the stress dispersion of the heat sink 200 and the plastic molding compound is no longer concentrated, thereby improving the reliability and service life of the product.
[0040] Based on this, this application proposes a semiconductor frame structure, semiconductor power device, and semiconductor module. By adding a physical partition 500 and / or creating a notch 600 in the semi-etched region 300, these structures improve stress release during high- and low-temperature cycling tests, thereby enhancing product reliability and quality. The product comprises a packaged chip, semiconductor frame structure, and other related components, such as a microcontroller, AC-DC controller, and optocoupler.
[0041] The semiconductor frame structure is described below with reference to some specific embodiments.
[0042] Figure 4 A schematic diagram of a semiconductor frame structure according to an embodiment of the present application is shown. Exemplarily, the semiconductor frame structure includes a wafer stage 100 and a heat sink 200. The wafer stage 100 is used to support the chip, while the heat sink 200 is primarily used to effectively conduct heat generated by the chip, thereby maintaining the chip's normal operating temperature and preventing performance degradation or even damage due to overheating.
[0043] like Figure 4As shown, the heat sink 200 is arranged on the back side of the wafer carrier 100; the wafer carrier 100 includes a semi-corrosion area 300; wherein the semi-corrosion area 300 is an area of the wafer carrier 100 that is not covered by the heat sink 200; at least one physical partition 500 is provided on the semi-corrosion area 300 and / or at least one notch 600 is opened on the semi-corrosion area 300; wherein the physical partition 500 is connected to the heat sink 200; and the notch 600 is connected to the heat sink 200.
[0044] Demonstratively, Figure 4 The four protruding legs of the wafer stage 100 in the middle and the two protruding legs of the wafer stage 100 on the left and right sides are pins 400, which are used to electrically connect with external components. In the following description of the semiconductor frame, the pins 400 will not be described again, but it should be clear that the pins 400 exist. In this embodiment, the size of the heat sink 200 is smaller than the size of the wafer stage 100. The area of the wafer stage 100 not covered by the heat sink 200 is surrounded by the left, right, top and bottom parts of the heat sink 200. The area not covered by the heat sink 200 is the semi-corroded area 300. Among them, the semi-corroded area 300 on the left side of the heat sink 200 is the same width as the semi-corroded area 300 on the right side of the heat sink 200. It should be noted that the "up" mentioned in this embodiment refers to the orientation of the four pins 400, and the "down" refers to the opposite direction of the four pins 400. Therefore, the left and right can also be determined based on the direction of the four pins 400.
[0045] In this embodiment, in order to disperse the stress, Figure 5 As shown, at least one physical partition 500 is set on the semi-corrosion area 300. The physical partition 500 can change the original long step surface into a plurality of small steps. The physical partition 500 is connected to the heat sink 200. When one physical partition 500 is set, the physical partition 500 can be set at any position of the semi-corrosion area 300. If multiple physical partitions 500 are set, the multiple physical partitions 500 are not connected. The physical partition 500 can be set on the semi-corrosion area 300 on the left side, the semi-corrosion area 300 on the right side, the lower semi-corrosion area 300 or the upper semi-corrosion area 300. Usually, since four pins 400 are set on the upper side, if multiple physical partitions 500 are set, they are usually set on the semi-corrosion area 300 on the left side, the semi-corrosion area 300 on the right side or the lower semi-corrosion area 300. However, in order to ensure that each edge of the heat sink 200 is well bonded with the molding compound, when multiple physical partitions 500 are provided, the multiple physical partitions 500 are dispersedly provided on the semi-corroded area 300 on each side.
[0046] In one embodiment, if Figure 6 As shown, to disperse stress, at least one notch 600 may be provided in the semi-etched region 300, changing the semi-etched region 300 from a flat surface to an uneven surface or a jagged shape. The notch 600 is intended to be connected to the heat sink 200. When a single notch 600 is provided, the notch 600 may be provided at any location in the semi-etched region 300. If multiple notches 600 are provided, they are not connected to each other. The notches 600 may be provided in at least one of the left, right, bottom, or top semi-etched regions 300. Typically, since four pins 400 are provided on the top side, multiple notches 600 are typically provided in at least one of the left, right, or bottom semi-etched regions 300. However, in order to ensure that each edge of the heat sink 200 is well bonded with the molding compound, when the plurality of notches 600 are formed, the plurality of notches 600 are dispersedly disposed on the semi-corroded area 300 on each side.
[0047] In one embodiment, if Figure 4 As shown, in order to disperse the stress, in this embodiment, at least one physical partition 500 can be provided on the semi-corroded area 300, and at least one notch 600 can be opened on the semi-corroded area 300. However, if at least one physical partition 500 is provided on the semi-corroded area 300 and at least one notch 600 is opened on the semi-corroded area 300, the physical partition 500 and the notch 600 are staggered, that is, the physical partition 500 and the notch 600 cannot be provided at the same place in the semi-corroded area 300. Figure 4 In the figure, the semi-etched area 300 is provided with physical partitions 500e and 500f, and has gaps 600e, 600f, 600g and 600h.
[0048] In this embodiment, as in the above embodiment, the physical partitions 500 are not connected to each other, and the gaps 600 are not connected to each other. The number of physical partitions 500 and gaps 600 can be set as needed. The physical partitions 500 can be set on the semi-corroded area 300 on the left side, the semi-corroded area 300 on the right side, the semi-corroded area 300 on the bottom side, or the semi-corroded area 300 on the top side. Usually, since four pins 400 are set on the upper side, if multiple physical partitions 500 are set, they are usually set on the semi-corroded area 300 on the left side, the semi-corroded area 300 on the right side, or the semi-corroded area 300 on the bottom side. The gaps 600 can be opened on the semi-corroded area 300 on the left side, the semi-corroded area 300 on the right side, the semi-corroded area 300 on the bottom side, or the semi-corroded area 300 on the top side. Usually, since four pins 400 are set on the upper side, Therefore, if multiple notches 600 are opened, they are usually opened on the semi-corroded area 300 on the left, the semi-corroded area 300 on the right, or the semi-corroded area 300 on the bottom. However, in order to ensure that each edge of the heat sink 200 is better combined with the plastic packaging material, when multiple physical partitions 500 are set, the multiple physical partitions 500 are dispersed on the semi-corroded area 300 on each side, and when multiple notches 600 are opened, the multiple notches 600 are dispersed on the semi-corroded area 300 on each side.
[0049] In some embodiments, the shape of the physical partition 500 in the above embodiment can be a polygon (such as a triangular shape, a quadrilateral, a pentagon, a hexagon, etc.), an arc shape, a zigzag shape, etc. It can be understood that if multiple physical partitions 500 are provided, the shapes of the multiple physical partitions 500 in the same semiconductor frame can be different or the same. In addition, the number of physical partitions 500 in the semi-etched area 300 on each side can also be different. Figure 5 、 Figure 7 and Figure 8 As shown, Figure 5 The shape of the middle solid partition 500 is the same, both are rectangular. Figure 7 and Figure 8 The difference between the various entities in the partition 500 is that, Figure 5 、 Figure 7 、 Figure 8 The arrangement of the solid partition 500 is only exemplary. Figure 8 In the figure, the shapes of the physical partition 500a, the physical partition 500b, the physical partition 500c, and the physical partition 500d are all different. When actually designing the semiconductor frame structure, the physical partition 500 is designed according to needs; the best situation is that the physical partitions 500 are evenly distributed on the semi-corrosion area 300.
[0050] In some embodiments, as Figure 6 As shown, the shape of the notch 600 in the above embodiment can be a polygon (such as a triangular deformation, a quadrilateral, a pentagon, a hexagon, etc.), an arc shape, a zigzag shape, etc. It can be understood that if multiple notches 600 are provided, the shapes of the multiple notches 600 in the same semiconductor frame can be different or the same. In addition, the number of notches 600 in the semi-etched region 300 on each side can also be different, such as Figure 6 In, such as Figure 6 , notch 600a, notch 600b, notch 600c and notch 600d are shown.
[0051] In some embodiments, the thickness of the physical partition 500 in the above embodiment is 50%-100% of the thickness of the heat sink 200, that is, the minimum thickness of the physical partition 500 is half the thickness of the heat sink 200, and the maximum thickness is the same as the thickness of the heat sink 200 (that is, the physical partition 500 cannot protrude from the heat sink 200).
[0052] In some embodiments, the maximum width of the physical partition 500 in the above embodiment is 50%-100% of the width of the semi-corroded region 300 where the physical partition 500 is currently located. It is understood that, generally, the widths of the left and right semi-corroded regions 300 are the same, and the widths of the upper and lower semi-corroded regions 300 are the same, but the widths of the left and right semi-corroded regions 300 may be different, and the widths of the upper and lower semi-corroded regions 300 may also be different. In this embodiment, the maximum width of the physical partition 500 refers to the maximum width of the edge of the physical partition 500 from the edge of the heat sink 200 to the outer edge of the physical partition 500 close to the semi-corroded region 300. The maximum width must be at least half the width of the semi-corroded region 300 where the physical partition 500 is located, and the maximum dimension of the maximum width is equal to the width of the semi-corroded region 300 where the physical partition 500 is located (i.e., the physical partition 500 cannot protrude from the semi-corroded region 300).
[0053] In some embodiments, the maximum length of the physical partition 500 in the above embodiment is 10%-50% of the length of the semi-corrosion area 300 where the current physical partition 500 is located. It can be understood that the maximum length of the physical partition 500 is the maximum length of the physical partition 500 in the up and down directions. The minimum of the maximum length should be set to 1 / 10 of the length of the semi-corrosion area 300 where the physical partition 500 is located, and the maximum of the maximum length should be set to half of the length of the semi-corrosion area 300 where the physical partition 500 is located. In this way, the physical partition 500 will not be too small and play a small role, and the physical partition 500 will not be too large, which makes it convenient to set up multiple physical partitions 500.
[0054] In some embodiments, in the above embodiment, the opening of the notch 600 faces one side of the heat sink 200; the thickness of the notch 600 is 50%-100% of the thickness of the semi-corroded area 300. It can be understood that the minimum thickness of the notch 600 is half of the thickness of the semi-corroded area 300, and the maximum thickness of the notch 600 is equal to the thickness of the semi-corroded area 300.
[0055] In some embodiments, in the above embodiment, the maximum width of the notch 600 is 50%-100% of the width of the semi-corrosion region 300 where the notch 600 is currently located; it can be understood that the minimum value of the maximum width of the notch 600 is half of the width of the semi-corrosion region 300 where the notch 600 is located, and the maximum value of the maximum width of the notch 600 is equal to the width of the semi-corrosion region 300 where the notch 600 is located.
[0056] In some embodiments, in the above embodiment, the maximum length of the notch 600 is 10%-50% of the length of the semi-corrosion region 300 where the notch 600 is currently located; it can be understood that the minimum value of the maximum length of the notch 600 is 1 / 10 of the length of the semi-corrosion region 300 where the notch 600 is located, and the maximum value of the maximum length of the notch 600 is half of the length of the semi-corrosion region 300 where the notch 600 is located.
[0057] In the present application, a physical partition 500 is provided on the semi-corroded area 300 and / or a notch 600 is opened on the semi-corroded area 300, and the physical partition 500 is connected to the heat sink 200; the notch 600 is connected to the heat sink 200, so that after the semiconductor frame and the chip are plastic-sealed, the bonding between the edge of the heat sink 200 and the plastic sealing material is strengthened, which effectively disperses the stress and avoids the problem of cracking of the plastic sealing body caused by stress concentration; in addition, since the bonding between the edge of the heat sink 200 and the plastic sealing material of the present application is strengthened and can withstand sufficient product stress deformation, the semiconductor frame structure of the present application significantly improves the reliability of the product in high and low temperature cycle tests and extends the service life of the product.
[0058] Some embodiments of the present application further provide a semiconductor power device, comprising: a chip, the above-mentioned semiconductor frame structure and a plastic package, wherein the chip is arranged on the semiconductor frame structure, and the plastic package covers the chip and the semiconductor frame structure.
[0059] The chip is the core control part of the semiconductor power device, which includes transistors; the plastic package is the part that encapsulates the chip, which is formed after the plastic package material is solidified. The plastic package wraps the chip to prevent the chip from being easily affected by interference from the external environment and increase the chip's service life.
[0060] Some embodiments of the present application further provide a semiconductor module, which includes the above-mentioned semiconductor power device.
[0061] It can be understood that the options in the above embodiment are also applicable to this embodiment, so they will not be described again here.
[0062] The above is only a specific implementation method of the present application, but the scope of protection of the present application is not limited thereto. Any technician familiar with this technical field can easily think of changes or replacements within the technical scope disclosed in this application, which should be covered by the scope of protection of the present application.
Claims
1. A semiconductor frame structure, characterized in that: include: wafer stage and heat sink; The heat sink is arranged on the back side of the wafer stage; The wafer stage includes a semi-corroded area; wherein the semi-corroded area is an area of the wafer stage that is not covered by the heat sink; At least one physical partition is provided on the semi-corroded area and / or at least one notch is opened on the semi-corroded area; wherein, the physical partition is connected to the heat sink; and the notch is connected to the heat sink.
2. The semiconductor frame structure according to claim 1, characterized in that When at least one of the physical partitions is provided on the semi-corroded area and at least one of the gaps is opened on the semi-corroded area, the physical partition and the gap are staggered.
3. The semiconductor frame structure according to claim 1, wherein: The thickness of the physical partition is 50%-100% of the thickness of the heat sink.
4. The semiconductor frame structure according to claim 1, wherein: The maximum width of the physical partition is 50%-100% of the width of the semi-corroded area where the physical partition is currently located; The maximum length of the physical partition is 10%-50% of the length of the semi-corrosion area where the physical partition is currently located.
5. The semiconductor frame structure according to claim 1, wherein: The opening of the notch faces one side of the heat sink; the thickness of the notch is 50%-100% of the thickness of the semi-corroded area.
6. The semiconductor frame structure according to claim 1, wherein: The maximum width of the notch is 50%-100% of the width of the semi-corroded area where the notch is currently located; The maximum length of the notch is 10%-50% of the length of the semi-corrosion region where the notch is currently located.
7. The semiconductor frame structure according to claim 1, wherein: The cross-sectional shape of the solid partition is polygonal, arc-shaped or sawtooth-shaped.
8. The semiconductor frame structure according to claim 1, wherein: The cross-sectional shape of the notch is polygonal, arc-shaped or sawtooth-shaped.
9. A semiconductor power device, characterized in that: include: The invention comprises a chip, a semiconductor frame structure according to any one of claims 1 to 8, and a plastic package, wherein the chip is arranged on the semiconductor frame structure, and the plastic package covers the chip and the semiconductor frame structure.
10. A semiconductor module, characterized in that: The semiconductor module includes the semiconductor power device according to claim 9.