Heating base for multi-wafer deposition in PECVD process chamber
By optimizing the heating base design of the PECVD equipment, the problems of slow temperature response and uneven film thickness are solved, fast and uniform wafer heating is achieved, and the deposition quality and equipment stability are improved.
Patent Information
- Application Number
- CN202422540521.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-21
- Publication Date
- 2025-08-29
- Estimated Expiration
- 2034-10-21
AI Technical Summary
The heating structure design of existing PECVD equipment leads to slow temperature response and it is difficult to quickly adapt to process requirements, resulting in uneven film thickness, affecting the deposition quality and equipment repeatability, and increasing maintenance costs.
The heating base for multi-wafer deposition of PECVD process chambers is adopted, including the hot disk top shell, resistance heating structure, K coupler and hot disk bottom shell. By optimizing the resistance heating structure and aluminum powder filling design, temperature uniformity and rapid response are ensured.
The uniform heating of the wafer is achieved, the uniformity and consistency of the film is improved, energy consumption is reduced, equipment life is extended, and maintenance costs are reduced.
Smart Images
Figure CN223280938U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of PECVD equipment, in particular to a heating base for multi-wafer deposition in a PECVD process chamber. Background Art
[0002] In semiconductor manufacturing, plasma-enhanced chemical vapor deposition (PECVD) equipment is widely used in thin film deposition processes. The heater plays a crucial role in the entire process, directly affecting deposition temperature uniformity, deposition rate, and the quality of the resulting film. Designing and optimizing the heater structure is key to ensuring stable performance and improving production efficiency.
[0003] Current plasma-enhanced chemical vapor deposition (PECVD) equipment typically uses resistance heating or infrared heating to heat process chamber components. These heating methods typically involve resistor wires embedded in the heating plate, or infrared lamps directly heating the wafer. The controller monitors the temperature in real time using thermocouples or infrared sensors, and adjusts the current through a closed-loop feedback system to maintain the set temperature.
[0004] Some equipment in the existing technology places all wafers on a large single heating plate. This design places high standards on the processing equipment. Due to the large size of the heating plate, its installation process is also quite challenging, which increases the difficulty of installation and subsequently increases the cost of subsequent maintenance. In addition, the temperature response of the heating plate is relatively slow, and it is difficult to quickly adapt to rapidly changing process requirements. When rapid process switching or completion of the process in a short time is required, the temperature often cannot reach the ideal set value, which in turn affects the deposition effect. What is more serious is that the grooves on the surface of a single large heating plate make it difficult to uniformly control the thickness of the film, and local overheating or cooling may occur, which not only reduces the deposition quality, but also affects the repeatability of the equipment, thereby reducing the product yield and increasing manufacturing costs. Especially after long-term use, the aging of the heating element and the drift of the sensor may cause unstable temperature control, further exacerbating the frequency and difficulty of maintenance. Utility Model Content
[0005] The purpose of the present invention is to provide a heating base for multi-wafer deposition in a PECVD process chamber, which is used to heat a single wafer and has a fast temperature response capability to ensure that the base temperature can quickly reach the set value and maintain a high degree of uniformity.
[0006] To achieve the above objectives, the present application proposes a heating pedestal for multi-wafer deposition in a PECVD process chamber, comprising:
[0007] The top shell of the hot plate is in direct contact with the wafer and has a receiving groove at the bottom;
[0008] A resistance heating structure, comprising a heating plate formed by winding a heating tube body and a lead tube, wherein a resistance wire is built into the heating plate and a resistance wire is built into the lead tube, wherein the heating plate is located in the receiving groove;
[0009] K couple, inserted into the top shell of the hot plate to measure its temperature;
[0010] The heat plate bottom shell serves as the lower end cover of the encapsulated resistance heating structure, and has a first through hole in the middle thereof for the lead tube to pass through;
[0011] The hot plate neck shell is connected to the bottom of the hot plate bottom shell. The hot plate neck shell has a second through hole which is through-set. The second through hole is connected to the first through hole.
[0012] In one embodiment, a hot plate base is connected to the lower portion of the hot plate neck shell, and the hot plate base is installed on the PM chamber of the PECVD equipment.
[0013] In one embodiment, the gap between the heating plate and the wall of the receiving groove of the heating plate top shell is filled with aluminum powder and vacuum brazing is performed.
[0014] In one embodiment, the material of the hot plate top shell and the hot plate bottom shell is AL3003P-H112; the material of the hot plate neck shell is AL3003B-H112.
[0015] In one embodiment, the heating plate includes a symmetrically arranged first arc portion, a symmetrically arranged second arc portion and an annular portion with an opening structure, the second arc portion is located on the inner side of the first arc portion and the two are connected by a first bending portion, and there is a first spacing between the first bending portions; the annular portion is connected to the second arc portion through the second bending portion, and there is a second spacing between the second bending portions, and the second spacing is greater than the first spacing.
[0016] In one embodiment, the first arc-shaped portion, the second arc-shaped portion, and the annular portion have the same center.
[0017] In one embodiment, the second arc portion is connected to the corresponding lead tube through the second straight tube and the third bent portion in sequence.
[0018] In one embodiment, magnesium oxide powder is filled between the heating tube and the resistance wire.
[0019] In one embodiment, the heating plate and the lead tube are arranged vertically.
[0020] The above technical solution adopted by the present invention has the following advantages compared with the prior art:
[0021] 1) Through reasonable layout and optimized resistance heating structure, each wafer can be ensured to be heated evenly and stably. This helps to reduce temperature differences between wafers, thereby improving the uniformity and consistency of the film.
[0022] 2) The heating plate of the present application can quickly transfer heat energy to the wafer, ensuring that the wafer reaches the required deposition temperature in a short time. This helps to improve production efficiency and reduce energy consumption.
[0023] 3) The optimized resistance heating structure ensures uniform heat distribution on the wafer heating base; through the reasonable winding method and spacing design, the temperature uniformity is further optimized, so that the wafer is heated more evenly during the heating process, avoiding local overheating or insufficient temperature, which helps to improve the quality and consistency of wafer processing.
[0024] 4) The circular coiled heating wire design helps reduce heat loss and improve the thermal efficiency of semiconductor equipment. It has good structural stability and durability, which can extend the service life of the equipment and reduce maintenance costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 A cross-sectional view of a heated pedestal for multi-wafer deposition in a PECVD process chamber;
[0026] Figure 2 This is the appearance of the heating pedestal used for multi-wafer deposition in the PECVD process chamber;
[0027] Figure 3 Schematic diagram of resistance heating structure;
[0028] Figure 4 This is a top view of the resistance heating structure.
[0029] Wherein: 1. resistance heating structure, 2. heating plate top shell, 3. K couple, 4. heating plate neck shell, 5. heating plate base, 6. positioning pin;
[0030] 11. First arc-shaped portion, 12. Second arc-shaped portion, 13. Ring-shaped portion, 14. Lead tube, 21. First bent portion, 211. First bent tube, 212. First straight tube, 22. Second bent portion, 23. Third bent portion, 231. Short tube, 232. Third straight tube, 232. Third bent tube. DETAILED DESCRIPTION
[0031] In order to make the technical problems, technical solutions and beneficial effects to be solved by this application more clearly understood, this application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.
[0032] It should be noted that when an element is referred to as being “fixed on” or “disposed on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or indirectly connected to the other element.
[0033] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined. "Several" means one or more, unless otherwise clearly and specifically defined.
[0034] In the description of this application, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.
[0035] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to internal communication between two components or the interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.
[0036] Example 1
[0037] like Figure 1-2 As shown, this embodiment provides a heating base for multi-wafer deposition in a PECVD process chamber, comprising:
[0038] The top shell of the hot plate is in direct contact with the wafer and is also the heating layer. There is a accommodating groove at the bottom.
[0039] The resistance heating structure includes a heating plate formed by winding a heating tube and a lead tube. The heating plate contains a resistance wire, and the space between the heating tube and the resistance wire is filled with magnesium oxide powder. Magnesium oxide powder has a high thermal conductivity coefficient and can effectively transfer the heat generated by the resistance wire to the heating tube, and then further to the wafer to be heated, thereby achieving a highly efficient heating effect. Magnesium oxide powder is an excellent insulator, which can effectively isolate the electrical contact between the resistance wire and the heating tube, ensuring that the surface of the heating tube is not charged, thereby improving the safety performance of the heating tube. The resistance wire conductor is built into the lead tube, and this part of the lead tube does not conduct heat.
[0040] K couple, inserted into the top shell of the hot plate to measure its temperature;
[0041] The heat plate bottom shell serves as the lower end cover of the encapsulated resistance heating structure, and has a first through hole in the middle thereof for the lead tube to pass through;
[0042] The hot plate neck shell is connected to the bottom of the hot plate bottom shell, and the hot plate neck shell has a second through hole arranged therethrough, and the second through hole is connected to the first through hole;
[0043] The heating plate base is connected to the lower portion of the heating plate neck shell. It is mounted on the PM chamber of the PECVD equipment using locating pins and a sealing ring. It supports the entire heating base and prevents deformation. The heating plate base is made of AL6061-T6 material, which ensures the heating base has excellent physical and mechanical properties, good thermal performance, and easy processing and welding.
[0044] As a preferred embodiment provided in this example, the top and bottom shells of the hot plate are made of AL3003P-H112; the neck shell of the hot plate is made of AL3003B-H112, which has superior strength. The selection of AL3003P-H112 and AL3003B-H112 as the materials for the top, bottom, and neck shells of the hot plate used in the PECVD process chamber for multi-wafer deposition ensures the hot plate exhibits excellent corrosion resistance, good formability and plasticity, outstanding weldability, good thermal conductivity, high strength, and durability. These advantages collectively improve the quality and uniformity of deposited thin films, reduce production costs, and increase production efficiency.
[0045] As a preferred embodiment provided by this embodiment, the gap between the heating plate and the wall of the receiving groove of the heating plate top shell is filled with aluminum powder and vacuum brazed to form a continuous and tight heat conduction path. This helps to reduce heat loss during the transfer process and improve the overall heat conduction efficiency of the heating base. Efficient heat conduction ensures that the wafer obtains a uniform and stable temperature distribution during the deposition process, thereby improving the quality and uniformity of the deposited film. After the aluminum powder is filled and welded, the connection strength between the heating plate and the heating plate top shell is significantly enhanced. This reinforced structure can resist the thermal and mechanical stresses generated during the process, ensuring the long-term stability and reliability of the heating base. The stable structure helps to reduce process fluctuations and improve the controllability and repeatability of the deposition process.
[0046] Example 2
[0047] like Figure 3-4 As shown, this embodiment provides a detailed introduction to the resistance heating structure in Example 1, wherein the heating disk includes a symmetrically arranged first arc-shaped portion, a symmetrically arranged second arc-shaped portion, and an annular portion with an opening structure, wherein the second arc-shaped portion is located inside the first arc-shaped portion and the two are connected via a first bend, and the annular portion is connected to the second arc-shaped portion via a second bend, respectively, and the second arc-shaped portion is connected to the corresponding lead tube via a second straight tube and a third bend in turn. By designing the shape of the heating disk, the shape of the resistance wire is restricted, ensuring uniform energy distribution of the wafer during the heating process. This not only helps to achieve consistent heating effects in various areas on the wafer, but also avoids wafer quality problems caused by local overheating or insufficient overheating. Uniform heating can also reduce thermal stress inside the wafer and prevent deformation or cracking of the wafer due to thermal expansion and contraction.
[0048] There is a first spacing between the first bending parts; there is a second spacing between the second bending parts, and the second spacing is greater than the first spacing, which helps to optimize the current distribution on the entire resistance wire and reduce local overheating and energy loss.
[0049] The first bent portion includes first bent tubes arranged at both ends of the first straight tube, one of which is connected to the first curved portion, and the other first bent tube is connected to the second curved portion. This not only enhances the overall structural strength of the resistance wire, but also improves its stability in high-temperature environments and reduces deformation or damage caused by thermal expansion and contraction. The second bent portion is an arc-shaped tube, which increases the contact area between the resistance wire and the top structure of the heating plate, thereby improving the heat dissipation efficiency. This helps to reduce the operating temperature of the resistance wire, extend its service life, and reduce energy loss. The third bent portions extending into the annular portion have an inwardly expanding spacing between them, which helps to optimize current distribution. Each third bent portion includes a short tube, a third straight tube, and a third bent tube connected in sequence, wherein the short tube is connected to the second straight tube, and the third bent tube is connected to the lead tube. The straight tubes are spaced parallel to each other. This structure can guide the current to flow more evenly through the resistance wire, reduce local overheating and energy loss, and improve energy efficiency.
[0050] The first arc-shaped portion, the second arc-shaped portion, and the annular portion share the same center. The entire resistance wire structure exhibits a high degree of symmetry, helping to ensure uniformity and stability during heating. The shared center design simplifies the design and manufacturing process of the resistance wire. Designers can more easily determine the size and shape of the arc-shaped portions, while manufacturers can use standardized tools and molds to produce these portions, thereby improving production efficiency and reducing costs.
[0051] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims
1. A heating base for multi-wafer deposition in a PECVD process chamber, characterized in that: include: The top shell of the hot plate is in direct contact with the wafer and has a receiving groove at the bottom; A resistance heating structure, comprising a heating plate formed by winding a heating tube body and a lead tube, wherein a resistance wire is built into the heating plate and a resistance wire is built into the lead tube, wherein the heating plate is located in the receiving groove; K couple, inserted into the top shell of the hot plate to measure its temperature; The heat plate bottom shell serves as the lower end cover of the encapsulated resistance heating structure, and has a first through hole in the middle thereof for the lead tube to pass through; The hot plate neck shell is connected to the bottom of the hot plate bottom shell. The hot plate neck shell has a second through hole which is through-set. The second through hole is connected to the first through hole.
2. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 1, characterized in that: The lower part of the hot plate neck shell is connected to a hot plate base, which is installed on the PM cavity of the PECVD equipment.
3. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 1, characterized in that: The gap between the heating plate and the wall of the accommodating groove of the heating plate top shell is filled with aluminum powder and vacuum brazing is performed.
4. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 1, characterized in that: The material of the hot plate top shell and the hot plate bottom shell is AL3003P-H112; the material of the hot plate neck shell is AL3003B-H112.
5. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 2, characterized in that: The hot plate base is made of AL6061-T6.
6. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 1, characterized in that: The heating plate includes a symmetrically arranged first arc-shaped portion, a symmetrically arranged second arc-shaped portion and an annular portion with an opening structure, the second arc-shaped portion is located on the inner side of the first arc-shaped portion and the two are connected by a first bending portion, and there is a first spacing between the first bending portions; the annular portion is connected to the second arc-shaped portion through the second bending portion, and there is a second spacing between the second bending portions, and the second spacing is greater than the first spacing.
7. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 1, characterized in that: The first arc-shaped portion, the second arc-shaped portion, and the annular portion have the same center.
8. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 1, characterized in that: The second arc portion is connected to the corresponding lead tube through the second straight tube and the third bent portion in sequence.
9. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 1, characterized in that: The space between the heating tube and the resistance wire is filled with magnesium oxide powder.
10. The heating base for multi-wafer deposition in a PECVD process chamber according to claim 1, characterized in that: The heating plate and the lead tube are arranged vertically.