Single wafer processing apparatus

Abstract

The utility model provides a single wafer processing device. The single wafer processing apparatus includes a wafer holding portion, a two-fluid nozzle, a pressure correction device, and a moving device. The wafer holding portion is configured to carry a wafer. The two-fluid nozzle is configured to provide a mixed fluid composed of a gas and a process liquid to the wafer. The pressure correction device is configured to measure a pressure value of the mixed fluid provided by the two-fluid nozzle. And the moving device is connected with the two-fluid nozzle and is configured to control the two-fluid nozzle to move between the pressure correction device and the wafer holding part.

Description

Technical Field

[0001] The present application relates to the field of semiconductor equipment, and in particular to single wafer processing equipment. Background Art

[0002] Currently, single-fluid and two-fluid nozzles are widely used for wafer surface cleaning in semiconductor processes. Single-fluid nozzles can only spray a single medium, such as deionized water (DI water) or a specific cleaning agent, resulting in relatively limited cleaning effectiveness. In contrast, two-fluid nozzles can mix and vaporize two media, such as DI water and nitrogen, to produce high-pressure water mist particles. These particles have a powerful impact force, enabling more efficient cleaning of wafer surfaces, especially in precision semiconductor processes.

[0003] However, the use of two-fluid nozzles in existing technologies still faces certain challenges. First, their pressure regulation systems are relatively complex, making precise control of pressure and flow difficult. Second, pressure calibration is not sensitive enough, which can easily lead to unstable or insufficient cleaning results, potentially affecting the removal of minor defects in semiconductor processes.

[0004] In view of this, it is necessary to provide a single wafer processing equipment to solve the above technical problems. Utility Model Content

[0005] In order to solve the above-mentioned problems of the prior art, the purpose of this application is to provide a single wafer processing equipment, which can achieve precise control of the pressure of the two-fluid nozzle, thereby improving the wet processing efficiency of the wafer and stabilizing the etching or cleaning effect.

[0006] In the first aspect, the present application provides a single wafer processing device, comprising: a wafer holding part, which can rotate around an axis and is configured to carry a wafer; a two-fluid nozzle, which is configured to provide a mixed fluid composed of gas and process liquid to the wafer; a pressure correction device, which is arranged on one side of the wafer holding part and is configured to measure the pressure value of the mixed fluid provided by the two-fluid nozzle; and a moving device, which is connected to the two-fluid nozzle and is configured to control the movement of the two-fluid nozzle between the pressure correction device and the wafer holding part.

[0007] In some embodiments, the single wafer processing equipment further includes: a liquid supply device connected to the two-fluid nozzle for providing the process liquid; and a gas supply device connected to the two-fluid nozzle for providing the gas.

[0008] In some embodiments, the single wafer processing equipment also includes: a host, electrically connected to the pressure correction device, the liquid supply device and the gas supply device, wherein the host receives the measured pressure value and adjusts the flow rate of the process liquid and / or the gas according to the pressure value.

[0009] In some embodiments, the pressure correction device includes a thin film pressure sensor.

[0010] In some embodiments, the single wafer processing equipment further includes: a memory configured to store a correspondence between the flow rates of the gas and the process liquid and the pressure values.

[0011] Compared with the previous technology, the present application provides a single wafer processing equipment, which uses a pressure correction device to measure and record the pressure value of the mixed fluid output by the two-fluid nozzle before officially starting the wafer cleaning process, and immediately feeds back these measurement results to the host. After receiving these pressure data, the host automatically adjusts the flow rate of the process liquid and / or gas according to the actual measured pressure value to ensure that the pressure of the mixed fluid sprayed from the two-fluid nozzle to the wafer surface can meet the preset cleaning process requirements. This design not only solves the complexity problem in the pressure regulation process, but also significantly improves the consistency and stability of the overall cleaning process through a precise pressure correction mechanism. In situations where extremely high precision is required for semiconductor processes, this precise control mechanism is particularly important to ensure that each cleaning can achieve the best results. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The following detailed description of the specific embodiments of the present application in conjunction with the accompanying drawings will make the technical solutions and other beneficial effects of the present application apparent.

[0013] Figure 1 A top view of a single wafer processing apparatus according to an embodiment of the present application is shown.

[0014] Figure 2 show Figure 1 Schematic diagram of single wafer processing equipment in the correction position.

[0015] Figure 3 show Figure 1 Schematic diagram of single wafer processing equipment in operating position.

[0016] Figure 4 A flow chart showing a method for controlling a single wafer processing device according to an embodiment of the present application. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0018] Please refer to Figure 1 and Figure 3 ,in Figure 1 A top view of a single wafer processing device according to an embodiment of the present application, and Figure 3 show Figure 1 Schematic diagram of a single wafer processing device in an operating position. The single wafer processing device 10 is used to perform various processes on the wafer, such as wet etching or removing particles on the surface of the wafer. The single wafer processing device 10 includes a wafer holding portion 11, a pressure correction device 12, a two-fluid nozzle 13 and a moving device 14. It should be understood that in Figure 1 In the embodiment, the single wafer processing equipment 10 includes three nozzles. However, in other embodiments, other numbers of two-fluid nozzles 13 may be included, and the present invention is not limited thereto.

[0019] like Figure 1 and Figure 3 As shown, the wafer holding portion 11 is used to carry the wafer 2 thereon. Its design can be selected to be rotatable around an axis and can use vacuum suction or clamping to maintain the stability of the wafer 2, but is not limited to this. The pressure correction device 12 is set on one side of the wafer holding portion 11, and the two-fluid nozzle 13 is set to be movable above the wafer holding portion 11 to provide a mixed fluid composed of gas and process liquid. The moving device 14 is connected to the two-fluid nozzle 13 and is mainly used to control the movement of the two-fluid nozzle 13 between the correction position P1 and the operating position (i.e., the position above the wafer holding portion 11).

[0020] Please refer to Figure 2 , which shows Figure 1Schematic diagram of a single wafer processing device in a correction position. The single wafer processing device 10 also includes a liquid supply device 15, a gas supply device 16, a first pipeline 151, a second pipeline 161 and a host 17. The liquid supply device 15 and the gas supply device 16 are connected to the two-fluid nozzle 13 through the first pipeline 151 and the second pipeline 161 respectively. The liquid supply device 15 can be used to provide various process liquids, such as etching liquid, deionized water (DI water), etc., while the gas supply device 16 is used to supply gas, such as clean dry air or nitrogen (N2). In addition, a pressure sensor 121 is provided in the pressure correction device 12 for accurately measuring the pressure value of the mixed fluid output by the two-fluid nozzle. The host 17 is communicatively connected to each component of the single wafer processing device 10 (for example, electrically connected to the pressure sensor 121 of the pressure correction device 12, the liquid supply device 15 and the gas supply device 16), and includes an electrically connected processor 171 and a memory 172.

[0021] In certain embodiments, when performing a wafer cleaning process, the two-fluid nozzle 13 mixes DI water with nitrogen and vaporizes it to form water mist particles (i.e., a mixed fluid) with strong impact to clean the wafer surface. In the prior art, since the pressure regulation of the two-fluid nozzle is relatively complex and difficult to accurately control, this can have a negative impact on the cleaning effect. Specifically, traditional single-wafer processing equipment generally calculates the possible output pressure of the mixed fluid of the two-fluid nozzle 13 based on the flow rate of the process liquid and gas. However, since changes in the internal environmental conditions of the equipment (such as temperature, pressure fluctuations, etc.) are difficult to accurately predict, there is often an error between the calculated pressure value and the actual output pressure value. This error can cause pressure instability during the cleaning process, thereby affecting the cleaning effect of the wafer. In addition, in order to verify whether the calculated pressure value can achieve the expected cleaning effect, it is usually necessary to perform routine tests on the wafer after cleaning, such as measuring the line width or checking for surface residues. Such a testing process not only consumes a lot of time and manpower, but also fails to provide immediate pressure correction information during the cleaning process, resulting in reduced process efficiency.

[0022] In order to solve the problem of difficulty in regulating the pressure of the two-fluid nozzle, the present application proposes an effective solution: a pressure correction device 12 is set in the single wafer processing equipment. Figure 2As shown, before the wafer cleaning process is officially carried out, the two-fluid nozzle 13 is first moved to the position of the pressure correction device 12. The pressure value of the water mist particles output by the two-fluid nozzle 13 is measured and recorded by the pressure correction device 12. Specifically, the pressure sensor 121 equipped with the pressure correction device 12 can accurately measure the pressure of the nozzle and immediately feed back the measurement result to the host 17. The host 17 receives the measured pressure value and adjusts the flow rate of the process liquid and / or gas (such as DI water and / or nitrogen) according to the pressure value to ensure that the pressure of the mixed fluid sprayed by the two-fluid nozzle 13 to the wafer surface reaches the set value required by the cleaning process. This correction and adjustment process significantly improves the efficiency of the cleaning process and ensures that the pressure adjustment process is more stable and accurate, thereby achieving the best cleaning effect. This design not only solves the complexity of pressure regulation, but also improves the consistency of the overall cleaning process through a precise pressure correction mechanism, which is particularly important in semiconductor processes that require extremely high precision.

[0023] In some embodiments, when adjusting pressure, it's best to maintain a constant process liquid flow rate and precisely adjust the pressure by adjusting the gas flow rate. This ensures a sufficient supply of process liquid, thus ensuring the smooth progress of the chemical reaction. While maintaining a constant process liquid flow rate helps maintain the consistency and stability of the chemical reaction, adjusting the gas flow rate allows for flexible control of pressure levels to meet varying cleaning requirements.

[0024] It should be understood that a setpoint can be either a fixed value or a range. A fixed value is a fixed, unchanging value that requires pressure to meet a specific standard. A range, on the other hand, is a range of values ​​between upper and lower limits, allowing for a certain degree of variation to accommodate actual process variations or uncertainties. Choosing the appropriate setpoint format based on different needs and application scenarios can better meet pressure control requirements and ensure equipment operational stability and cleaning effectiveness.

[0025] In some embodiments, the set values ​​are stored in the memory 172 of the host computer 17. The host computer 17 not only records the measured pressure values ​​of the two fluids but also stores the corresponding relationships between the gas flow rate and the process liquid flow rate and pressure values. This allows the host computer 17 to automatically call the optimal set values ​​for different wafer or substrate types during subsequent processes. Based on these set values, the host computer 17 adjusts the gas and process liquid flow rates accordingly to achieve optimal cleaning results and process control. This automatic adjustment function improves process flexibility and accuracy, adapting to different cleaning requirements.

[0026] Preferably, the pressure sensor 121 of the pressure calibration device 12 is a thin-film pressure sensor, made of, for example, a plastic film. This type of sensor offers high-precision measurement capabilities, capable of measuring pressure values ​​down to the gram level, providing extremely accurate data. The high resolution and stability of thin-film pressure sensors enable precise measurement and control during the pressure calibration process, significantly improving the effectiveness and consistency of the cleaning process.

[0027] Please refer to Figure 1 and Figure 3 ,in Figure 3 show Figure 1 Schematic diagram of the single wafer processing equipment in the operating position. After the pressure value of the mixed fluid output by the two-fluid nozzle 13 is calibrated, the wafer cleaning process is formally carried out. Specifically, the two-fluid nozzle 13 is controlled by the moving device 14 to move from the calibration position P1 to the operating position (i.e., the position above the wafer holding part 11). The moving device 14 is composed of a rotating lifting column 141 and a long arm 142, wherein the two-fluid nozzle 13 is fixed to one end of the long arm 142, and the other end of the long arm 142 is connected to the rotating lifting column 141. The rotating lifting column 141 is arranged on the periphery of the wafer holding part 11 and maintains a certain distance from it. When the rotating lifting column 141 rotates, the long arm 142 will drive the two-fluid nozzle 13 to move together. For example, the moving device 14 can control the two-fluid nozzle 13 to move from the calibration position P1 to above the wafer holding part 11, so that the first nozzle 121 can spray the mixed fluid above the wafer 2 along the predetermined path R. The path R includes: moving from point A on the edge of the wafer 2 toward the center point O of the wafer 2 , and then moving from the center point O toward point B on the other edge of the wafer 2 .

[0028] In some embodiments, the rotary lifting column 141 is connected to the rotary drive unit and the lifting drive unit at the same time. The two drive units can control the rotation and lifting motion respectively through two independent drive devices (such as motors), or the two can be integrated into one drive device and connected to the rotary lifting column 141. Through the movement of the rotary drive unit, the rotary lifting column 141 rotates around its axis, so that the long arm 142 drives the two-fluid nozzle 13 to move along the path R on the horizontal plane. Through the movement of the lifting drive unit, the rotary lifting column 141 can perform lifting motion in a direction perpendicular to the horizontal plane, thereby changing the height of the two-fluid nozzle 13. This design allows the two-fluid nozzle 13 to move flexibly in both the horizontal and vertical directions, thereby achieving precise cleaning of different areas, and can effectively adjust the nozzle height to meet different cleaning needs.

[0029] The present application also provides a control method for a single wafer processing device, which is executed by the above-mentioned single wafer processing device 10, wherein the structure of the single wafer processing device 10 is as described above and will not be repeated here. The processor 171 and the memory 172 of the host 17 of the single wafer processing device 10 are arranged on a circuit board. The memory 172 is configured to store executable program codes. The processor 171 reads the executable program codes stored in the memory and runs the program corresponding to these executable program codes to execute the control method of the present application. In addition, the host 17 of the single wafer processing device 10 may also include one or more of the following components: a circuit board, a power supply circuit, etc.

[0030] In this embodiment, the processor 171 is generally configured to control the overall operation of the host 17. The processor 171 may include one or more processors to execute instructions and thereby perform actions in all or part of the steps involved in the operation of the single-wafer processing equipment 10 described above. Furthermore, the processor 171 may include one or more modules to facilitate interaction between the processor and other components. For example, the processor 171 may include a communication module to facilitate interaction between the communication component and the processor. The memory 172 is configured to store various types of data to support the operation of the host. Examples of such data include instructions for any application or method operating on the host. The memory 172 may be implemented using any type of volatile or non-volatile memory device, or a combination thereof. The power supply circuitry provides power to the various components of the host 17. The power supply circuitry may include a power management system, one or more power supplies, and any other components associated with the generation, management, and distribution of power for the host. In exemplary embodiments, the host 17 may be implemented as a standalone terminal device or as an electronic component such as a controller or microcontroller integrated into the single-wafer processing equipment 10.

[0031] Please refer to Figure 4 , which shows a flow chart of a control method of a single wafer processing device according to an embodiment of the present application. The control method of the present application comprises: first, providing the single wafer processing device 10 as described above. Figures 1 to 3 As shown, the single wafer processing equipment 10 includes a wafer holding portion 11, a pressure correction device 12, a two-fluid nozzle 13, a moving device 14, a liquid supply device 15, a gas supply device 16, a first pipeline 151, a second pipeline 161, and a host 17. The structures of these components are as described above and are not further described here.

[0032] In step 41, a wafer 2 is placed on a wafer holding portion 11. The wafer holding portion 11 can be rotatable around an axis and can use vacuum suction or clamping to keep the wafer 2 stable.

[0033] like Figure 1 and Figure 2As shown, in step 42 , the two-fluid nozzle 13 is controlled by the moving device 14 to move to above the pressure sensor 121 of the pressure correction device 12 and a mixed fluid consisting of gas and process liquid is applied to the pressure correction device 12 .

[0034] like Figure 1 and Figure 2 As shown, in step 43 , the pressure correction device 12 is controlled to measure the pressure value of the mixed fluid provided by the two-fluid nozzle 13 .

[0035] In step 44, host computer 17 determines whether the pressure value meets the set value. Specifically, in this embodiment, before the wafer cleaning process officially begins, pressure calibration device 12 measures and records the pressure of the water mist particles output by the two-fluid nozzle 13, and immediately feeds the measurement result back to host computer 17. Host computer 17 receives the measured pressure value and adjusts the flow rate of the process liquid and / or gas accordingly to ensure that the pressure of the mixed fluid sprayed onto the wafer surface by the two-fluid nozzle 13 reaches the set value required for the cleaning process. The specific pressure adjustment mechanism and method are described above and will not be elaborated on here.

[0036] In step 45, if yes, the two-fluid nozzle 13 is controlled by the moving device 14 to spray the mixed fluid along a path above the wafer 2. For example, Figure 1 As shown, the moving device 14 can control the two-fluid nozzle 13 to move from the calibration position P1 to above the wafer holding portion 11, so that the first nozzle 121 can spray the mixed fluid above the wafer 2 along a predetermined path R. The path R includes: moving from point A on the edge of the wafer 2 toward the center point O of the wafer 2, and then moving from the center point O toward point B on the other edge of the wafer 2.

[0037] It should be understood that, in some embodiments, the wafer 2 may be placed on the wafer holding portion 11 only after it is determined that the pressure value meets the set value (ie, step 41 is performed before step 45 ).

[0038] In summary, this application uses a pressure correction device to measure and record the pressure value of the mixed fluid output by the two-fluid nozzle before officially starting the wafer cleaning process, and immediately feeds back these measurement results to the host. After receiving these pressure data, the host automatically adjusts the flow rate of the process liquid and / or gas according to the actual measured pressure value to ensure that the pressure of the mixed fluid sprayed from the two-fluid nozzle to the wafer surface can meet the preset cleaning process requirements. This design not only solves the complexity problem in the pressure regulation process, but also significantly improves the consistency and stability of the overall cleaning process through a precise pressure correction mechanism. In situations where extremely high precision is required for semiconductor processes, this precise control mechanism is particularly important to ensure that each cleaning can achieve the best results.

[0039] The above is a detailed introduction to a single-wafer processing device provided by an embodiment of the present application. Specific embodiments are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only intended to help understand the technical solutions and core ideas of the present application. Those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some of the technical features therein with equivalents. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A single wafer processing device, characterized in that: include: a wafer holding portion rotatable about an axis and configured to carry a wafer; a two-fluid nozzle configured to provide a mixed fluid consisting of a gas and a process liquid to the wafer; a pressure correction device, disposed on one side of the wafer holding portion, configured to measure a pressure value of the mixed fluid provided by the two-fluid nozzle; as well as The moving device is connected to the two-fluid nozzle and is configured to control the two-fluid nozzle to move between the pressure correction device and the wafer holding portion.

2. The single wafer processing equipment according to claim 1, wherein: The single wafer processing equipment further includes: a liquid supply device connected to the two-fluid nozzle and configured to supply the process liquid; and A gas supply device is connected to the two-fluid nozzle and is used to provide the gas.

3. The single wafer processing equipment according to claim 2, wherein: The single wafer processing equipment also includes: a host, which is electrically connected to the pressure correction device, the liquid supply device and the gas supply device, wherein the host receives the measured pressure value and adjusts the flow rate of the process liquid and / or the gas according to the pressure value.

4. The single wafer processing equipment according to claim 1, wherein: The pressure correction device includes a thin film pressure sensor.

5. The single wafer processing equipment according to claim 1, wherein: The single wafer processing equipment further includes: a memory configured to store a corresponding relationship between the flow rates of the gas and the process liquid and the pressure values.

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