IGBT module detection device

Abstract

The utility model discloses an IGBT (Insulated Gate Bipolar Translator) module detection device, which relates to the field of detection and comprises a signal generation module used for generating square wave signals, amplifying and shaping the signals and pushing a post-stage isolation transformer to send the signals to an IGBT module; the IGBT module is used as a device to be tested; the pulse detection module is used for judging the performance and the quality of the IGBT according to whether a light-emitting tube emits light or not; the signal generation module is connected with the IGBT module, and the IGBT module is connected with the pulse detection module; compared with the prior art, the beneficial effects of the utility model are that the IGBT module performance can be comprehensively tested, the stability and reliability of the IGBT module under different working conditions can be ensured, and the electrical parameters and switching characteristics of the IGBT module can be tested; the reliability test of the IGBT module is realized; therefore, the protection function test of the IGBT module is realized.

Description

Technical Field

[0001] The utility model relates to the field of detection, in particular to an IGBT module detection device. Background Art

[0002] With the continuous development of power electronics technology, IGBT (Insulated Gate Bipolar Transistor) modules have been widely used in industries, transportation, power systems, and other fields. As an important power switching component, the stability and reliability of IGBT modules are crucial to the operation of the system.

[0003] If there is an IGBT module detection device that can evaluate and ensure the performance and quality of the IGBT module, it will help improve the stability and working efficiency of the system where the IGBT module is located. Utility Model Content

[0004] The purpose of the present invention is to provide an IGBT module detection device to solve the problems raised in the above background technology.

[0005] To achieve the above objectives, the present invention provides the following technical solutions:

[0006] An IGBT module detection device, comprising:

[0007] The signal generation module is used to generate a square wave signal, amplify and shape the signal, and then drive the subsequent isolation transformer to send it to the IGBT module;

[0008] IGBT module, used as the device under test;

[0009] Pulse detection module, used to judge the performance and quality of IGBT by whether the light-emitting tube emits light;

[0010] The signal generation module is connected to the IGBT module, and the IGBT module is connected to the pulse detection module.

[0011] As a further solution of the present invention: the signal generating module includes a timer U2 and an amplifier chip U1. The timer U2 is a 555 timer. The amplifier chip U1 is UCC27322. The square wave signal output from pin 3 of the amplifier U2 is input to pin 2 of the amplifier chip U1. Pin 7 of the amplifier chip U1 is connected to an isolation transformer.

[0012] As a further solution of the present invention: the pulse detection module includes a capacitor C11, a resistor R27, a transistor Q7, a resistor R22, a capacitor C10, an optocoupler GD1, a diode D13, and a diode D14. One end of the capacitor C11 is connected to the IGBT module and one end of the resistor R21. The other end of the resistor R21 is connected to the cathode of the diode D13 and the anode of the diode D14. The other end of the capacitor C11 is connected to one end of the resistor R27 and one end of the resistor R26. The other end of the resistor R26 is connected to one end of the resistor R23. The other end of the resistor R23 is connected to a 12V voltage and one end of the resistor R22. The first terminal of the optical coupler GD1 is connected to the cathode of the circuit, the second terminal of the optical coupler GD1 is connected to the anode of the diode D25 through the resistor R31, the cathode of the diode D25 is connected to the cathode of the circuit, the fourth terminal of the optical coupler GD1 is connected to the cathode of the circuit, the emitter of the optical coupler GD1 is connected to the cathode of the circuit, and the collector of the optical coupler GD1 is connected to the other terminal of the optical coupler R22, the other terminal of the optical coupler C10, the anode of the diode D13, and the first terminal of the optical coupler GD1.

[0013] As a further solution of the present invention: the IGBT module detection device also includes a high voltage generating module to generate a 1.0KV voltage.

[0014] As a further solution of the present invention: the IGBT module detection device also includes a power supply module for generating 12V and 3.3V voltages.

[0015] Compared with the existing technology, the beneficial effects of the present invention are: the present invention can comprehensively test the performance of the IGBT module, ensure its stability and reliability under different working conditions, realize the test of the electrical parameters and switching characteristics of the IGBT module; realize the reliability test of the IGBT module; realize the protection function test of the IGBT module. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is the circuit diagram of the signal generation module, IGBT module, and pulse detection module.

[0017] Figure 2 This is the circuit diagram of the high voltage generation module.

[0018] Figure 3 Circuit diagram for outputting 12V to the power supply module.

[0019] Figure 4 Circuit diagram for outputting 3.3V to the power supply module.

[0020] Figure 5 This is the circuit diagram of the current generating module. DETAILED DESCRIPTION

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0022] See also Figure 1 , an IGBT module detection device, comprising:

[0023] The signal generation module is used to generate a square wave signal, amplify and shape the signal, and then drive the subsequent isolation transformer to send it to the IGBT module;

[0024] IGBT module, used as the device under test;

[0025] Pulse detection module, used to judge the performance and quality of IGBT by whether the light-emitting tube emits light;

[0026] The signal generation module is connected to the IGBT module, and the IGBT module is connected to the pulse detection module.

[0027] In this example: See Figure 1 The signal generation module includes a timer U2 and an amplifier chip U1. The timer U2 is a 555 timer, and the amplifier chip U1 is UCC27322. The square wave signal output by pin 3 of the amplifier U2 is input to pin 2 of the amplifier chip U1, and pin 7 of the amplifier chip U1 is connected to the isolation transformer.

[0028] The 555 timer is a versatile timer / counter widely used in electronic circuit design due to its stability, reliability, and wide range of applications. When power is applied to the circuit, capacitor C15 begins charging through resistors R37 and R39 until the voltage reaches the voltage level of pin 6 of timer U2, at which point pin 3 of timer U2 goes low. Capacitor C15 continues to discharge through resistor R38. When the voltage drops below the voltage level of pin 2 of timer U2, pin 3 of timer U2 goes high, and capacitor C15 begins charging again, repeating the cycle. By adjusting the values ​​of the circuit components, square wave signals with different frequencies and duty cycles can be generated. By adjusting the values ​​of the resistors and capacitors, the signal frequency (period) and duty cycle (the ratio of the high-level time to the period) can be changed. Depending on the specific circuit parameter design, signal waveforms with different frequencies and duty cycles can be obtained.

[0029] The calculation equation is f=1 / T, T=1.44 / (R37+R39+R38)C15, and the calculated frequency is approximately 1KHZ.

[0030] Amplifier chip U1 is a UCC27322 chip. The UCC27322 high-speed driver provides a peak drive current of 9A on an industry-standard pinout. The chip inputs a square wave signal from pin 2, amplifies and shapes the signal, and then drives the subsequent isolation transformer to the IGBT module.

[0031] In this example: See Figure 1 The pulse detection module includes capacitor C11, resistor R27, transistor Q7, resistor R22, capacitor C10, optocoupler GD1, diode D13, and diode D14. One end of capacitor C11 is connected to the IGBT module and one end of resistor R21. The other end of resistor R21 is connected to the cathode of diode D13 and the anode of diode D14. The other end of capacitor C11 is connected to one end of resistor R27 and one end of resistor R26. The other end of resistor R26 is connected to one end of resistor R23. The other end of resistor R23 is connected to 12V voltage, one end of resistor R22, and capacitor C10. The other end of the resistor R27 is connected to one end of the resistor R29 and the base of the transistor Q7. The other end of the resistor R29 is connected to the negative electrode of the circuit. The emitter of the transistor Q7 is connected to the negative electrode of the circuit. The collector of the transistor Q7 is connected to the other end of the resistor R22, the other end of the capacitor C10, the anode of the diode D13, and the first end of the optocoupler GD1. The second end of the optocoupler GD1 is connected to the anode of the diode D25 through the resistor R31. The cathode of the diode D25 is connected to the negative electrode of the circuit. The fourth end of the optocoupler GD1 is connected to the cathode of the diode D14. The third end of the optocoupler GD1 is connected to the negative electrode of the circuit.

[0032] The signal generation module generates appropriate pulse width, frequency and amplitude, generates a series of pulses according to the required test requirements and the specifications of the IGBT module, and applies them to the control pin of the IGBT module. At the end of each pulse cycle, the pulse signal is restored to the initial state.

[0033] If the IGBT module is not connected, there is no pulse on capacitor C11. At this time, the base potential of transistor Q7 is clamped by diode D20. The voltage across diode D20 is approximately 0.7V. After being divided by resistors R26 and R27, the base potential of transistor Q7 is lower than 0.7V. Transistor Q7 is in the cut-off state and the collector is high. At this time, optocoupler GD1 is turned on, and diodes D14 and D25 light up, indicating that the IGBT module is not connected. When the pulse is normal, the pulse is coupled to the base of transistor Q7 through capacitor C11. Due to the AC effect of the capacitor, the base of transistor Q7 has a pulse voltage higher than 0.7V for the pulse, and transistor Q7 is turned on, indicating that the IGBT module is normal.

[0034] Pulse testing can also assess the switching speed, response time, and power amplification capability of the IGBT module. A normal IGBT module should have a fast switching response and a stable output waveform. Abnormal waveforms, rise and fall times, or amplitudes may indicate a module failure or performance degradation. Furthermore, if an IGBT open circuit or short circuit is detected, an automatic notification will be displayed: diode D13 indicates a short circuit, and diode D14 also indicates an open circuit.

[0035] In this example: See Figure 2 The IGBT module detection device also includes a high voltage generating module that generates a 1.0KV voltage.

[0036] The insulation performance and conduction state of the IGBT module are determined by measuring the resistance between the insulated gate (G pole) and the collector (C pole), as well as the resistance between the control pole and the collector.

[0037] For insulation testing, a high-voltage power supply can be used to apply 1.0 kV between the C and E terminals and measure the resistance between the gate and collector to ensure proper insulation performance under high voltage. Abnormal resistance or leakage indicates a module problem. The 1.0 kV voltage is generated by a high-voltage generator module.

[0038] In this example: See Figure 3 and Figure 4 The IGBT module detection device also includes a power supply module for generating 12V and 3.3V voltages.

[0039] like Figure 3 As shown, the AC power generates a 12V voltage by passing through the AC-DC conversion chip M1.

[0040] like Figure 4 As shown, 48V DC is converted into 3.3V voltage by DC-DC converter chip M2. Generating the corresponding voltage by voltage conversion chip is a common technology and will not be described in detail here.

[0041] The IGBT module detection device also includes a current generating module, which determines its conduction state and current carrying capacity by applying a certain current and measuring the voltage drop between the collector (C) and the emitter (E), and the voltage drop between the control electrode and the collector.

[0042] like Figure 5The figure shows the current generating module, which generates current for the IGBT module. A high-power power module is used. To reduce size and maintain performance, the output is filtered with a 6.3V 1500uF polymer capacitor. The module can output 1.2V at 30A. This module uses a planar transformer constructed with a multilayer PCB, ensuring stable output at high currents. For high-current testing of 20A, a 20A current is applied using the current source on the control module. The voltage drop between the collector and the insulated gate, as well as the voltage drop between the control electrode and the collector, is measured. Abnormally high voltage drops indicate current concentration or channel damage within the module. High-current testing of IGBT modules utilizes low voltage and high current to reduce heat generation. For IGBT modules with higher voltage drops, the output voltage can be adjusted to around 2.5V. However, this results in a significant increase in power and heat generation. Testers should monitor the IGBT module's heat generation at all times, or conduct tests on a heat sink with forced air cooling to prevent damage from excessive heat generation.

[0043] When conducting a large current test, the input circuit will generate a 1KHZ pulse at the same time, amplify the 20A current and generate a corresponding induced electromotive force on the transformer, output rectification, and detect whether the IGBT module is normal through the light condition of diode D6.

[0044] The working principle of the utility model is as follows: the signal generation module is used to generate a square wave signal, amplify and shape the signal, and then drive the subsequent isolation transformer to send it to the IGBT module; the IGBT module is used as the device to be tested; the pulse detection module is used to judge the performance and quality of the IGBT by whether the light-emitting tube emits light or not.

[0045] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be considered in all respects as exemplary and non-restrictive.

[0046] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

Claims

1. An IGBT module detection device, characterized in that: The IGBT module detection device includes: The signal generation module is used to generate a square wave signal, amplify and shape the signal, and then drive the subsequent isolation transformer to send it to the IGBT module; IGBT module, used as the device under test; Pulse detection module, used to judge the performance and quality of IGBT by whether the light-emitting tube emits light; The signal generation module is connected to the IGBT module, and the IGBT module is connected to the pulse detection module.

2. The IGBT module detection device according to claim 1, characterized in that: The signal generation module includes timer U2 and amplifier chip U1. Timer U2 is a 555 timer. The amplifier chip U1 is UCC27322. The square wave signal output from pin 3 of amplifier U2 is input to pin 2 of amplifier chip U1. Pin 7 of amplifier chip U1 is connected to the isolation transformer.

3. The IGBT module detection device according to claim 1 or 2, characterized in that: The pulse detection module includes capacitor C11, resistor R27, transistor Q7, resistor R22, capacitor C10, optocoupler GD1, diode D13, and diode D14. One end of capacitor C11 is connected to the IGBT module and one end of resistor R21. The other end of resistor R21 is connected to the cathode of diode D13 and the anode of diode D14. The other end of capacitor C11 is connected to one end of resistor R27 and one end of resistor R26. The other end of resistor R26 is connected to one end of resistor R23. The other end of resistor R23 is connected to 12V voltage, one end of resistor R22, and the cathode of capacitor C10. One end of the resistor R27 is connected to one end of the resistor R29 and the base of the transistor Q7. The other end of the resistor R29 is connected to the cathode of the circuit. The emitter of the transistor Q7 is connected to the cathode of the circuit. The collector of the transistor Q7 is connected to the other end of the resistor R22, the other end of the capacitor C10, the anode of the diode D13, and the first end of the optocoupler GD1. The second end of the optocoupler GD1 is connected to the anode of the diode D25 through the resistor R31. The cathode of the diode D25 is connected to the cathode of the circuit. The fourth end of the optocoupler GD1 is connected to the cathode of the diode D14. The third end of the optocoupler GD1 is connected to the cathode of the circuit.

4. The IGBT module detection device according to claim 1, characterized in that: The IGBT module detection device also includes a high voltage generating module that generates a 1.0KV voltage.

5. The IGBT module detection device according to claim 1, characterized in that: The IGBT module detection device also includes a power supply module for generating 12V and 3.3V voltages.

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