Integrated multi-base-island sealing heating chip applied to high-low edge control and PCB (Printed Circuit Board)

Abstract

The utility model provides an integrated multi-base-island sealed heating chip applied to high and low edge control and a PCB (Printed Circuit Board), which adopt a sealed chip frame with two base islands, a first base island and a second base island are arranged on the same plane, and the effective isolation distance is 100-400 microns; pins of the chip comprise a chip power supply input pin and a high-side output port which are connected with the first base island, and a low-side return and output port which is connected with the second base island; the chip power supply input pins are arranged on a first side edge, far away from the second base island, of the chip and an adjacent second side edge; the high-side output port is arranged on the third side edge and is adjacent to the first side edge; the low-side return port is arranged on the third side and is far away from the first side, and the low-side output port is arranged on the second side and is far away from the first side. The chip provided by the utility model effectively isolates high-side driving and low-side driving at the same time, ensures that single-point failure does not influence other circuits, reduces the risk of failure, greatly reduces the packaging area at the same time, and realizes the microminiaturization of the chip.

Description

Technical Field

[0001] The utility model belongs to the field of integrated circuits, and in particular relates to an integrated multi-island sealed heating chip and a PCB board for high-side and low-side control. Background Art

[0002] Currently, when heating a single-channel heating load such as a heating pad, the industry usually needs to use a discrete design to achieve single-channel heating control. Specifically, Figure 1 As shown, the existing single-channel heating drive circuit includes a high-side driver chip 101, a low-side driver MOS transistor and a low-side diagnostic circuit 103 that are integrated on the same circuit board. The existing high-side driver chip 101 is an intelligent IC with an area of ​​approximately 7mm×6mm; the low-side driver MOS transistor has an area of ​​approximately 6mm×6mm.

[0003] Therefore, using the aforementioned single-channel heating driver circuit as a typical example, current heating high- and low-side driver control products face the challenges of small PCB layout size and high design difficulty. Furthermore, with the increasing prevalence of functional safety development, simultaneous high- and low-side heating control has become the mainstream design trend. This further increases the layout difficulty when functionality cannot be reduced.

[0004] Although some existing technologies have been developed to reduce PCB size by improving packaging methods, there are no products that can be applied to the drive control of high and low side heating. Usually, a vertically stacked chip frame design is used, and the number of base islands is arbitrary. Summary of the Invention

[0005] The purpose of the utility model is to provide an integrated multi-island sealed heating chip and PCB board for high and low side control, so as to reduce the failure risk during the application process, while greatly reducing the packaging area and realizing ultra-miniaturization of the chip.

[0006] In order to achieve the above-mentioned purpose, the utility model provides an integrated multi-island sealed heating chip for high- and low-side control, which adopts a two-island sealed chip frame, wherein the first base island and the second base island are arranged on the same plane and the effective isolation spacing is between 100μm and 400μm; the pins of the integrated multi-island sealed heating chip include a plurality of chip power input pins and a plurality of high-side output ports electrically connected to the first base island, and a plurality of low-side return ports and a plurality of low-side output ports electrically connected to the second base island; the chip power input pin is used to connect the power supply, the high The high-side output port is used to connect one end of the heating load, the low-side output port is used for grounding, and the low-side return port is used to connect the other end of the heating load; most of the chip power input pins are located on the first side of the integrated multi-island sealed heating chip away from the second base island, and a small part is located on the second side adjacent to the first side and adjacent to the first side; the high-side output port is located on the third side opposite to the second side and adjacent to the first side; the low-side return port is located on the third side and away from the first side, and the low-side output port is located on the second side and away from the first side.

[0007] The first base island and the second base island are arranged in parallel; the total length of the integrated multi-island sealed heating chip in the parallel arrangement direction is 6.5 mm, and the length in the other direction is 4 mm. The length of the first base island in the parallel arrangement direction is 3.75 mm, and the length of the second base island in the parallel arrangement direction is 2.225 mm.

[0008] The first base island integrates a high-side drive circuit, a high-side output sampling circuit, and a diagnostic function circuit; the second base island integrates a low-side drive circuit and a low-side output diagnostic function circuit; the high-side output sampling circuit includes a load current detection circuit to realize current diagnosis of the high-side output; the high-side output diagnostic function circuit is configured to realize short-circuit diagnosis, overcurrent diagnosis, and open-circuit diagnosis, and automatically shut down the high-side drive circuit when the diagnosis result is abnormal.

[0009] The pins of the integrated multi-base island sealed heating chip also include a high-side switch control port and a high-side diagnostic enable port electrically connected to the first base island, a high-side current recovery pin, a low-side switch control port electrically connected to the second base island, a ground port, and a reserved pin.

[0010] The high-side output port is the source of the high-side MOS tube of the high-side driving circuit in the first base island, the low-side output port is the drain of the low-side MOS tube of the low-side driving circuit in the second base island, and the high-side switch control port and the low-side switch control port are used to control the gates of the high-side MOS tube and the low-side MOS tube, respectively.

[0011] The high-side MOS transistor and the low-side MOS transistor are both NMOS transistors.

[0012] The integrated multi-island sealed heating chip is used for a heating controller of a heating pad load, and the heating controller of the heating pad load is a cabin heating controller.

[0013] The cabin heating controller includes at least one of a steering wheel heating controller, a rearview mirror heating controller and a seat heating controller.

[0014] On the other hand, the utility model provides a PCB board, which is installed with an integrated multi-island sealed heating chip for high and low side control as described above, the third side of the integrated multi-island sealed heating chip faces the interface side of the PCB board, and the PCB traces of the power input pin, the PCB traces of the high side output port, the PCB traces of the low side return port, and the PCB traces of the low side output port are arranged in sequence along the interface side to connect the power supply, the two ends of the heating pad load and the ground in sequence.

[0015] The lengths of the PCB traces of the high-side output port and the PCB traces of the low-side return port are both less than 1 cm.

[0016] The integrated multi-island sealed heating chip for high- and low-side control of the utility model adopts a planar and reasonable layout based on the sealed chip frame of 2 base islands, and designs an effective isolation distance between the base islands to effectively isolate the high-side drive and low-side drive designs at the same time, ensuring that single-point failure has no impact on other projects, reducing the risk of failure during the application process, and at the same time greatly reducing the packaging area to achieve ultra-miniaturization of the chip; and under the premise of size optimization, the performance of the heating function is improved: load capacity, heat dissipation capacity, EMC performance; the cost of single-channel high and low-side control is reduced, bringing more superior cost advantages.

[0017] Specifically, the enhanced load capacity is achieved by selecting a sealed high-side intelligent driver chip and the low-side MOS itself has a higher load capacity; EMC performance is achieved by shortening the power path and power loop path to the greatest extent through PCB design, and optimizing the radiation emission path, which mainly improves the performance of EMC emission tests; heat dissipation capacity: This is achieved by maximizing the heat dissipation area through chip substrate design, as well as the chip QFN frame design and internal thermal design, which greatly enhances the chip's heat dissipation capacity.

[0018] The integrated multi-island sealed heating chip for high and low side control of the utility model adopts a specific pin arrangement to adapt to the interface of the PCB board, realizes the optimal arrangement of the PCB board, and can realize a small size of the PCB.

[0019] The integrated multi-island sealed heating chip for high- and low-side control of the utility model adopts a 2-island sealed chip frame, which is used for the heating pad load and integrates high-side drive, low-side drive, sampling and diagnosis of high-side drive, sampling and diagnosis functions of low-side drive, and meets the redundant design of low-side control and diagnosis design of functional safety level B; through the 2-island sealed chip frame, it also includes the redundant design required by functional safety, which is more in line with customer needs, and can be horizontally applied to a variety of similar high and low-side control products, with high flexibility in use. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural diagram of an existing driving solution for a single-channel heating function.

[0021] Figure 2 The present invention is a schematic structural diagram of an integrated multi-island sealed heating chip for high-side and low-side control according to an embodiment of the present invention.

[0022] Figure 3 Is installed as Figure 2 The structure diagram of the PCB board with integrated multi-island sealed heating chip for high and low side control is shown.

[0023] Figure 4 Yes Figure 2 The current loop diagram shown is for an integrated multi-island sealed heating chip for high- and low-side control when the first island fails.

[0024] Figure 5 Yes Figure 2 The current loop diagram shown is a diagram of an integrated multi-island sealed heating chip for high- and low-side control when the second island fails.

[0025] Figure 6 Yes Figure 2 The structure block diagram of the first base island and the second base island of the integrated multi-island sealed heating chip applied to high and low side control is shown. DETAILED DESCRIPTION

[0026] The present invention will be further described below with reference to the embodiments and drawings, but the scope of protection of the present invention shall not be limited thereby.

[0027] like Figure 2 The figure shows a schematic structural diagram of an integrated multi-island sealed heating chip for high-side and low-side control according to an embodiment of the present invention, which is used for a heating controller for a heating pad load. The heating controller for the heating pad load is a cabin heating controller, for example, a steering wheel heating controller, a rearview mirror heating controller, a seat heating controller, etc. Figure 2As shown, the integrated multi-island sealed heating chip for high and low side control includes a first base island 10, a second base island 20 and a two-island sealed chip frame, wherein the first base island 10 and the second base island 20 are arranged on the same plane.

[0028] Among them, the packaging area of ​​the integrated multi-island co-packaged heating chip is 4mm×6.5mm, which is smaller than the packaging area of ​​the main IC and MOSFET of the benchmark solution. Therefore, all the functions of the existing discrete chip heating solution are achieved through a co-packaged chip, and the total packaging area is reduced by at least 50%.

[0029] In this embodiment, the integrated multi-island sealed heater chip is packaged in a QFN (Quad Flat No-leads Package). Therefore, both sides of the integrated multi-island sealed heater chip have a 0.25mm wide edge seal. Therefore, the actual package area of ​​the integrated multi-island sealed heater chip is (4+0.5)mm×(6.5+0.5)mm. The 0.5mm here does not represent the package area, but the area after soldering to the chip plus 0.5, which is the edge seal width.

[0030] The first base island 10 and the second base island 20 are arranged in parallel. The total length of the integrated multi-island sealed heating chip in the parallel arrangement direction is 6.5mm, and the length in the other direction is 4mm. The length of the first base island 10 in the parallel arrangement direction is 3.6mm, and the length of the first base island 10 in the other direction is 2.4mm. The length of the second base island 20 in the parallel arrangement direction is 2.225mm, and the length of the second base island 20 in the other direction is 2.95mm. The effective isolation distance D1 between the first base island 10 and the second base island 20 is between 100μm and 400μm, and in this embodiment, it is 375μm. In this way, effective electrical isolation is achieved between the first base island 10 and the second base island 20, ensuring that the failure of a single base island has no impact on other base islands.

[0031] The integrated multi-island packaged heater chip's pinout includes seven power input pins (HD) electrically connected to the first island (10), four high-side output pins (HS), a high-side switch control pin (IN), a high-side current recovery pin (IS), and a high-side diagnostic enable pin (DEN). It also includes five low-side return pins (LD), four low-side output pins (LS), and a low-side switch control pin (LG) electrically connected to the second island (20). It also includes a ground pin (GND) and a reserved pin (NC) for the voltage sampling output of the low-side driver circuit. The power input pin (HD) is used to connect to a power source, and the high-side output pin (HS) is used to connect to one end of the heating load. The ground pin (GND) is connected to the ground of both the first and second islands. The low-side return pin (LD) (i.e., the drain of the low-side MOSFET) is connected to the other end of the heating pad. The low-side output pin (LS) (i.e., the source of the low-side MOSFET) is grounded.

[0032] The high-side diagnostic enable port, DEN, enables diagnostics (when receiving the DEN_HIGH signal) and disables them (when receiving the DEN_LOW signal). The high-side diagnostic feedback pin and current sampling pin reuse the high-side current sampling pin, IS, hence the design of the high-side diagnostic enable port, DEN. The low-side second base island uses the diagnostic circuitry of the first base island to diagnose the sampling results and directly process or not process the diagnostics. This function does not reuse other functions, so a diagnostic port is not required.

[0033] The width of the pins at the four corners of the chip is 225μm, and the width of the other pins is 250μm; the center distance between the pins at the four corners of the chip and the adjacent pins on the same side is 488μm, and the center distance between the other two adjacent pins is 500μm.

[0034] In order to optimize the routing of the integrated multi-island sealed heating chip for high- and low-side control when it is mounted on a PCB board, so that the wiring distance is the shortest path, in the present invention, most of the chip power input pins HD are located on the first side of the integrated multi-island sealed heating chip away from the second island, and a small portion is located on the second side adjacent to the first side and adjacent to the first side; the high-side output port HS is located on the third side opposite to the second side and adjacent to one side; the low-side return port LD is located on the third side and away from the first side, and the low-side output port LS is located on the second side and away from the first side; the high-side switch control port IN, the high-side diagnostic enable port DEN, the high-side current recovery pin IS, the ground port GND, and the low-side switch control port LG are all located on the second side and between the chip power input pin HD and the low-side output port LS.

[0035] Therefore, the PCB board with the integrated multi-island sealed heating chip for high and low side control of the present invention is installed as follows: Figure 3 As shown, the third side faces the interface side 210 of the PCB board 200, and the PCB trace 201 of the power input pin HD, the PCB trace 202 of the high-side output port HS, the PCB trace 203 of the low-side return port LD, and the PCB trace 204 of the low-side output port LS are arranged in sequence along the interface side 210 to sequentially connect the power supply, the two ends of the heating pad load, and the ground. The length of the PCB trace 202 of the high-side output port HS and the PCB trace 203 of the low-side return port LD are both less than 1 cm.

[0036] The first base island 10 integrates a high-side driver circuit, a high-side output sampling circuit, and a diagnostic circuit 11. The second base island 20 integrates a low-side driver circuit. The second base island 20 may also include a short-circuit protection circuit 21, independent of the diagnostic circuit 11. The high-side smart chip (i.e., MCU) integrated within the first base island 10 is an existing chip, and the diagnostic circuit 11 is implemented by the MCU. The MOS driver transistor (i.e., NMOS transistor) integrated within the second base island 20 is also an existing chip. Figure 6 The internal electronic architecture of the first base island 10 and the second base island 20 is described.

[0037] The internal reverse polarity protection circuit 12 in the first base island 10 detects reverse polarity and sends a signal to the reverse protection switch 119 of the diagnostic function circuit 11. This reverse protection switch 119 shuts down the circuit, ensuring that even if reverse polarity occurs, the circuit will not burn out, thereby achieving reverse polarity protection. The input logic processing unit 13 processes signals from the high-side switch control port IN and the high-side diagnostic enable port DEN and sends them to the diagnostic function circuit 11. The overvoltage clamping protection circuit 111 within the diagnostic function circuit 11 of the first base island 10 is connected to the source and drain of the high-side MOS transistor of the high-side driver circuit to implement overvoltage protection. The overcurrent protection circuit 113 within the diagnostic circuit 11 of the first base island 10 determines whether an overcurrent condition exists. If so, the load current detection circuit 112 simultaneously outputs an overcurrent signal to the sensor output interface circuit 14, limiting the current. The high-side current sampling pin IS then outputs a fault signal (serving as a full-scale signal). If there is no overcurrent condition, a properly sampled voltage value signal is output via the load current detection circuit 112 and the high-side current sampling pin IS (confirming that the output signal is a voltage, not a current, which is converted to a current value by an external circuit mechanism). The output voltage limiting circuit 117 of the diagnostic circuit 11 is used to limit the voltage if the voltage detection sensor 118 of the diagnostic circuit 11 detects an overvoltage condition.

[0038] Furthermore, the short-circuit protection circuit 21 of the second base island 20, independent of the diagnostic circuit 11, can also prevent short circuits. The short-circuit protection circuit 21 directs a signal to the gate of the low-side MOS transistor of the second base island 20, shutting down the low-side MOS transistor and protecting the low-side MOS transistor. The voltage detection sensor 218 of the second base island 20 is used to collect the voltage of the low-side MOS transistor and output the voltage value through the NC pin. Furthermore, when the diagnostic circuit 11 of the first base island 10 determines a short circuit, it outputs a shutdown voltage (typically in software form) to the gate of the low-side MOS transistor, shutting down the low-side MOS transistor.

[0039] The base island is a general concept and part of the general chip framework design. It should be noted that in other embodiments, the internal design of the base island is determined and adjusted by the chip manufacturer based on the chip's functional requirements. The base island can also adopt various existing base island structures. The structure of the base island itself is not limited to the solution of this utility model.

[0040] In this embodiment, the high-side output port HS serves as the source of the high-side MOS transistor of the high-side driver circuit in the first base island 10, and the low-side output port LS serves as the drain of the low-side MOS transistor of the low-side driver circuit in the second base island 20. The high-side switch control port IN and the low-side switch control port LG control the gates of the high-side MOS transistor and the low-side MOS transistor, respectively, via the input logic processing unit 13 and the gate control circuit 23. The high-side control port does not directly control the gate of the high-side MOS transistor. Instead, it controls the gate of the high-side MOS transistor in the second base island 10 by combining the gate voltage with the internal boost circuit 116 (i.e., the current pump) of the second base island 10. The MOS driver transistor in the first base island 10 is a high-side MOS transistor, while the MOS driver transistor in the second base island 20 is a low-side MOS transistor. Both are NMOS transistors.

[0041] Among them, the sampling circuit of the high-side output includes a load current detection circuit 112 to realize the current diagnosis of the high-side output; the diagnostic function circuit is configured to realize short-circuit diagnosis and overcurrent diagnosis, and when the diagnosis result is abnormal, the high-side drive circuit and the low-side drive circuit are shut down through its drive logic control unit 115; in addition, it is also configured to realize open-circuit diagnosis.

[0042] The basic working principle of the load current detection circuit 112 is as follows: when the diagnostic function is turned off through the high-side diagnostic enable port DEN, the load current detection circuit 112 collects the R DSON Resistance (R DSONThe resistor is connected in parallel with the high-side MOS transistor, connected to the source and drain respectively, and the voltage across the resistor (the natural impedance value between the source and drain) passes through a built-in high-precision operational amplifier. The load current detection circuit 112 feeds back the IS sampling value through the high-side current recovery pin IS and the sensor output interface circuit 14; the diagnostic function circuit of the first base island calculates the received IS sampling value through the actual current value acquisition module to obtain the actual current value; in addition, when the diagnostic function is enabled through the high-side diagnostic enable port DEN, the high-side current recovery pin IS and the diagnostic function circuit can be used to diagnose short circuits, open circuits, and overcurrents, and the drive logic control unit 115 or the overcurrent protection circuit 113 of the diagnostic function circuit 11 shuts down the high-side drive circuit (i.e., the high-side NMOS).

[0043] The first base island 10 further includes a temperature sensor 15 disposed adjacent to the high-side driver circuit. The temperature sensor 15 is connected to an overheat protection circuit 114 of the diagnostic function circuit 11. When the diagnostic function circuit determines through the overheat protection circuit 114 that the temperature exceeds a threshold, the drive logic control unit 115 of the diagnostic function circuit shuts down the high-side driver circuit.

[0044] The result of the high-side current sampling is processed by the diagnostic function circuit in the first base island 10 to determine whether to disable the automatic shutdown of the low-side driver circuit, and is not directly transmitted to the second base island 20 .

[0045] The following combination Figure 4 and Figure 5 The failure working principle of the integrated multi-island sealed heating chip applied to high and low side control of the utility model is described.

[0046] like Figure 4 As shown, when the high-side driver circuit in the first base island 10 fails, i.e., the switch of the high-side driver circuit (i.e., the high-side NMOS) is uncontrolled and cannot be properly turned off, resulting in a short circuit to the high-side of the heating element, the low-side driver circuit (i.e., the low-side NMOS) in the second base island 20 can still ensure normal switching function. Based on the abnormal diagnosis result obtained by the diagnostic function circuit in the first base island 20, the second base island 20 automatically shuts down the low-side driver circuit, disconnecting the entire circuit of the chip of the present invention and stopping the heating function.

[0047] That is, when the first base island 10 fails, the logic for triggering the shutdown of the second base island 20 is completed by the diagnostic function circuit in the first base island 10. Possible situations include:

[0048] 1) The diagnostic circuit 11 generates a heating shutdown command when it detects an abnormality. Upon receiving the heating shutdown command (switch / bus), the diagnostic circuit shuts down the heating high-side driver circuit and the low-side driver circuit. Therefore, even if the first base island 10 fails, the heating function can still be shut down.

[0049] 2) The heating control function of the diagnostic circuit has a heating timeout control logic. If the heating time exceeds a certain limit, the diagnostic circuit will automatically shut down the high-side and bottom-side heating. Even if the first base island fails, the heating function can still be turned off.

[0050] It should be noted that the diagnostic circuit (i.e., MCU) cannot currently detect chip failures. Thermal runaway can only be avoided through control strategies and chip architecture integration.

[0051] like Figure 5 As shown, when the low-side driver circuit in the second base island 20 fails, i.e., the low-side driver circuit's switch is uncontrolled and cannot be properly shut down, causing the low-side of the heating element to be constantly shorted to ground, the high-side driver circuit in the first base island 10 can still ensure normal switching function. The control strategy for failure of the second base island (low-side) is the same as that for the first base island. When the diagnosis result of the first base island 10 is abnormal, the high-side driver circuit can be automatically shut down, disconnecting the entire circuit of the chip of the present invention and stopping the heating function.

[0052] Thus, the present invention, through the combined diagnostic functions of the first base island 10 and the second base island 20, implements reverse power supply protection, high-side overcurrent protection, and overvoltage protection, achieving a redundant design for functional safety and meeting the ISO 26262 standard for automotive system functional safety level B heating functions. This invention implements all the functions of current discrete heating solutions in a single chip.

[0053] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Various modifications are possible to the above embodiments of the present invention. In other words, any simple, equivalent changes and modifications made in accordance with the claims and description of the present invention fall within the scope of protection of the present invention. Anything not fully described in this invention represents conventional technology.

Claims

1. An integrated multi-island sealed heating chip for high-side and low-side control, characterized in that: The invention comprises a first base island, a second base island, and a two-base island sealed chip frame, wherein the first base island and the second base island are arranged on the same plane and the effective isolation spacing is between 100 μm and 400 μm; The pins of the integrated multi-island sealed heating chip include a plurality of chip power input pins and a plurality of high-side output ports electrically connected to the first base island, and a plurality of low-side return ports and a plurality of low-side output ports electrically connected to the second base island; The chip power input pin is used to connect the power supply, the high-side output port is used to connect one end of the heating load, the low-side output port is used for grounding, and the low-side return port is used to connect the other end of the heating load; most of the chip power input pins are arranged on the first side of the integrated multi-base island sealed heating chip away from the second base island, and a small part is arranged on the second side adjacent to the first side and adjacent to the first side; the high-side output port is arranged on the third side opposite to the second side and adjacent to the first side; the low-side return port is arranged on the third side and away from the first side, and the low-side output port is arranged on the second side and away from the first side.

2. The integrated multi-island sealed heating chip for high-side and low-side control according to claim 1, characterized in that: The first base island is integrated with a high-side driving circuit, a sampling circuit for high-side output, and a diagnostic function circuit, and the second base island is integrated with a low-side driving circuit; The sampling circuit of the high-side output includes a load current detection circuit to realize current diagnosis of the high-side output; the diagnostic function circuit of the high-side output is configured to realize overcurrent diagnosis and short-circuit diagnosis, and automatically shut down the high-side drive circuit and the low-side drive circuit when the diagnosis result is abnormal; it is also configured to realize open circuit diagnosis.

3. The integrated multi-island sealed heating chip for high-side and low-side control according to claim 2, characterized in that: The pins of the integrated multi-base island sealed heating chip also include a high-side switch control port and a high-side diagnostic enable port electrically connected to the first base island, a high-side current recovery pin, a low-side switch control port electrically connected to the second base island, a ground port, and a reserved pin.

4. The integrated multi-island sealed heating chip for high-side and low-side control according to claim 3, characterized in that: The high-side output port is the source of the high-side MOS tube of the high-side driving circuit in the first base island, the low-side output port is the drain of the low-side MOS tube of the low-side driving circuit in the second base island, and the high-side switch control port and the low-side switch control port are used to control the gates of the high-side MOS tube and the low-side MOS tube, respectively.

5. The integrated multi-island sealed heating chip for high-side and low-side control according to claim 4, characterized in that: The high-side MOS transistor and the low-side MOS transistor are both NMOS transistors.

6. The integrated multi-island sealed heating chip for high-side and low-side control according to claim 1, characterized in that: The integrated multi-island sealed heating chip is used for a heating controller of a heating pad load, and the heating controller of the heating pad load is a cabin heating controller.

7. The integrated multi-island sealed heating chip for high-side and low-side control according to claim 6, characterized in that: The cabin heating controller includes at least one of a steering wheel heating controller, a rearview mirror heating controller and a seat heating controller.

8. The integrated multi-island sealed heating chip for high-side and low-side control according to claim 1, characterized in that: The first base island and the second base island are arranged in parallel; the total length of the integrated multi-island sealed heating chip in the parallel arrangement direction is 6-7mm, and the length in the other direction is 3.5-4.5mm. The length of the first base island in the parallel arrangement direction is 3-4.5mm, and the length of the second base island in the parallel arrangement direction is 2-2.5mm.

9. A PCB board, characterized in that: It is installed with an integrated multi-island sealed heating chip for high and low side control according to one of claims 1-8, the third side of the integrated multi-island sealed heating chip faces the interface side of the PCB board, and the PCB traces of the power input pin, the PCB traces of the high side output port, the PCB traces of the low side return port, and the PCB traces of the low side output port are arranged in sequence along the interface side to connect the power supply, the two ends of the heating pad load and the ground in sequence.

10. The PCB board according to claim 9, characterized in that: The lengths of the PCB traces of the high-side output port and the PCB traces of the low-side return port are both less than 1 cm.

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