Electrostatic chuck, electrostatic adsorption device and semiconductor equipment

Abstract

The utility model relates to the technical field of semiconductor manufacturing, and provides an electrostatic chuck, an electrostatic adsorption device and semiconductor equipment, and the electrostatic chuck comprises a base layer, a dielectric layer and an electrode group. The electrode group is positioned between the dielectric layer and the base layer; the dielectric layer is divided into a plurality of adsorption areas, the electrode group comprises a plurality of electrodes, and in the direction perpendicular to the dielectric layer, one adsorption area in the dielectric layer corresponds to at least one electrode. The dielectric layer of the electrostatic chuck is divided into a plurality of areas, each area is internally provided with an electrode, the adsorption force of each area of the electrostatic chuck can be controlled through the electrodes, and then part of defects of a vacuum adsorption type chuck are overcome, and the phenomenon that an existing electrostatic chuck is uneven in adsorption is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to an electrostatic chuck, an electrostatic adsorption device and semiconductor equipment. Background Art

[0002] The chuck is one of the core components of semiconductor manufacturing equipment and is used in processes such as dry etching, chemical vapor deposition (CVD), and physical vapor deposition (PVD). Its core function is to adsorb and fix the wafer during each wafer manufacturing process.

[0003] Existing chucks are generally divided into two categories: one is a vacuum adsorption chuck, and the other is an electrostatic adsorption chuck.

[0004] Vacuum adsorption chucks are divided into multi-bump support vacuum chucks and ring groove vacuum chucks; the adsorption structure of the multi-bump support vacuum chuck is multiple bumps, which relies on a vacuum source to extract the air between the bumps of the chuck and the wafer to create a negative pressure environment, thereby achieving adsorption of the wafer; the adsorption structure of the ring groove vacuum chuck is an annular groove, which relies on a vacuum source to extract the air between the annular groove of the chuck and the wafer to create a negative pressure environment, thereby achieving adsorption of the wafer.

[0005] Vacuum adsorption chucks are currently widely used in various semiconductor manufacturing processes. Vacuum adsorption chucks have the following defects:

[0006] During vacuum adsorption, the adsorption force is determined by the vacuum degree and the gap between the bonding surfaces. When there is a local gap between the wafer and the chuck, the force generated by the vacuum is difficult to fully act on the wafer, which makes it difficult to control the vacuum-adjusted adsorption force. In particular, it is difficult to increase the vacuum to adjust the adsorption force for a deformed wafer to fit the chuck. During the chuck adsorption process, vacuum needs to be drawn, which causes the air between the wafer and the chuck to flow rapidly. Therefore, during the adsorption process, tiny particles may be sucked into the space between the wafer and the chuck with the air flow, causing local deformation of the wafer and affecting the processing accuracy of the wafer. Chuck vacuum adsorption requires a The vacuum air line is prepared, resulting in a high frequency of operation and maintenance of the vacuum adsorption chuck. The blockage of the vacuum air line or the filter will cause the vacuum to drop. Therefore, the vacuum value needs to be checked and adjusted monthly, and the filter needs to be replaced quarterly. Vacuum adsorption is not suitable for wafers with special processes, such as perforation processes or wafers with a high degree of bending and warping. The vacuum response speed of the vacuum adsorption chuck is slow and cannot be switched on and off quickly, resulting in problems of air suction and vacuum residue. The vacuum adsorption force of the vacuum adsorption chuck is uneven, and local stress concentration is prone to occur during adsorption. In addition, the vacuum adsorption chuck cannot be used in a vacuum environment, and its applicable scenarios are relatively limited.

[0007] In addition, the adsorption force of the existing electrostatic adsorption chuck cannot be locally adjusted. For chips with high degrees of bending, warping or other deformations, the adsorption force is uneven, resulting in insufficient local adsorption force or local stress concentration on the chip. Therefore, it is not suitable for chips with high degrees of bending, warping or other deformations.

[0008] To this end, the present invention provides an electrostatic chuck, an electrostatic adsorption device, and a semiconductor device to improve the defects of the above-mentioned vacuum adsorption chuck and the uneven adsorption phenomenon of the existing electrostatic chuck. Utility Model Content

[0009] The purpose of the present utility model is to provide an electrostatic chuck, an electrostatic adsorption device and a semiconductor device. The dielectric layer of the electrostatic chuck is divided into several areas, and an electrode is provided in each area. By independently controlling each electrode, the adsorption force of each area of ​​the electrostatic chuck can be adjusted, thereby improving the defects of the above-mentioned vacuum adsorption chuck and the uneven adsorption phenomenon of the existing electrostatic chuck.

[0010] The utility model provides an electrostatic chuck, comprising a base layer, a dielectric layer and an electrode group; the electrode group is located between the dielectric layer and the base layer; the dielectric layer is divided into a plurality of adsorption areas, and the electrode group includes a plurality of electrodes, and along a direction perpendicular to the dielectric layer, one of the adsorption areas in the dielectric layer corresponds to at least one of the electrodes. Each electrode can be independently controlled by an external power supply group, so that the electrostatic adsorption force of each adsorption area in the dielectric layer can be independently controlled and adjusted. Therefore, the electrostatic chuck can achieve independent adjustment of the adsorption force of specific parts for wafers with high degrees of bending, warping or other deformations, so as to cope with the adsorption of wafers with different warping and deformations. Therefore, the electrostatic chuck is suitable for the adsorption of wafers with high degrees of bending, warping or other deformations. The above-mentioned adsorption method can also improve the phenomenon of insufficient local adsorption force or local stress concentration of the wafer, making the adsorption force more uniform, thereby improving the phenomenon of scars and wrinkles on the wafer caused by uneven adsorption.

[0011] Optionally, the electrostatic chuck further includes a pressure-sensitive layer, the pressure-sensitive layer being located between the electrode group and the base layer, and the pressure-sensitive layer being used to detect pressure distribution on the surface of the dielectric layer.

[0012] Optionally, the electrostatic chuck further includes an insulating layer, wherein the insulating layer is located between the electrode group and the pressure-sensitive layer.

[0013] Optionally, the electrode includes reciprocatingly bent electrode wires, and the electrode wires are evenly distributed in the adsorption area.

[0014] Optionally, the dielectric layer is circular, and each of the adsorption regions is fan-shaped.

[0015] Optionally, the central angles of the adsorption regions are the same.

[0016] Optionally, the adsorption area is divided radially into a first sub-area in a sector shape and a second sub-area in a sector ring shape, and both the first sub-area and the second sub-area correspond to one of the electrodes.

[0017] The utility model also provides an electrostatic adsorption device, comprising the electrostatic chuck and a power supply group as described above, wherein one of the electrodes is individually connected to one of the power supply groups.

[0018] Optionally, the electrostatic adsorption device further includes a controller, and the controller is connected to the power pack;

[0019] When the electrostatic chuck includes a pressure-sensitive layer, the controller is connected to the pressure-sensitive layer.

[0020] The utility model also provides a semiconductor device, which includes the electrostatic adsorption device described above.

[0021] In summary, the electrostatic chuck includes a base layer, a dielectric layer and an electrode group; the electrode group is located between the dielectric layer and the base layer; the dielectric layer is divided into multiple adsorption areas, and the electrode group includes multiple electrodes. Along the direction perpendicular to the dielectric layer, one of the adsorption areas in the dielectric layer corresponds to at least one of the electrodes.

[0022] With this configuration, each electrode can be independently controlled by an external power supply, allowing the electrostatic adsorption force of each adsorption area in the dielectric layer to be independently controlled and adjusted. Therefore, for wafers with significant warping or other deformations, the electrostatic chuck can independently adjust the adsorption force at specific locations to accommodate wafers with varying degrees of warping and deformation. This electrostatic chuck is therefore suitable for adsorbing wafers with significant warping or other deformations. This adsorption method can also improve localized adsorption force or localized stress concentration on the wafer, making the adsorption force more uniform and thereby alleviating scratches and wrinkles on the wafer caused by uneven adsorption.

[0023] Compared with the vacuum chuck, the electrostatic chuck does not rely on vacuum for its adsorption force. When there is a local gap between the wafer and the chuck, the wafer is adsorbed by increasing the electrostatic adsorption force, and almost all of the adsorption force acts on the wafer, making the electrostatic adsorption force more controllable and improving the reliability of the chuck adsorption. The electrostatic chuck does not require vacuum during the adsorption process, so there is no air flow during the adsorption process. Therefore, during the adsorption process, small particles will not be sucked into the space between the wafer and the chuck with the air, which is beneficial to improving the adsorption effect and improving the local deformation of the wafer surface caused by small particles, thereby improving the processing accuracy. The electrostatic chuck does not require a complex air path, which helps to reduce the frequency of subsequent operation and maintenance. The electrostatic chuck can be used for adsorption of wafers with special processes such as perforation or high-degree bending and warping. It can also be used for adsorption of conductors, semiconductors, insulators and porous materials, making the electrostatic chuck more applicable. The electrostatic chuck has a fast response speed and can be switched on and off quickly, without the stress residual problem of vacuum adsorption. The electrostatic chuck does not require vacuum during the adsorption process and can be used simultaneously in atmospheric and vacuum environments, further improving its scope of application. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a schematic structural diagram of an electrostatic chuck according to an embodiment of the present invention;

[0025] Figure 2 This is a schematic diagram of the distribution structure of each adsorption area of ​​the dielectric layer according to an embodiment of the present invention;

[0026] Figure 3 This is a schematic diagram of the distribution structure of electrodes and adsorption areas according to an embodiment of the present invention;

[0027] Figure 4 This is a schematic structural diagram of a pressure-sensitive layer according to an embodiment of the present invention;

[0028] Figure 5 Schematic diagram of the structure of an electrostatic adsorption device according to an embodiment of the present invention.

[0029] Among them, in the accompanying drawings:

[0030] 10-base layer; 11-mounting through hole;

[0031] 20 - dielectric layer; 21 - adsorption region; 211 - first sub-region; 212 - second sub-region;

[0032] 30-electrode group; 311-first electrode; 312-second electrode;

[0033] 40-pressure-sensitive layer;

[0034] 50-insulation layer;

[0035] 60-power supply group; 61-RF power supply; 62-voltage regulator. DETAILED DESCRIPTION

[0036] The following is a detailed description of the electrostatic chuck, electrostatic adsorption device, and semiconductor device proposed in the present invention, with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are highly simplified and not to exact scale, and are intended solely to facilitate and clarify the description of the embodiments of the present invention.

[0037] As used in the present invention, the singular forms "a", "an", and "the" include plural objects, the term "or" is generally used to include the meaning of "and / or", the term "several" is generally used to include the meaning of "at least one", and the terms "at least two" or "a plurality" are generally used to include the meaning of "two or more". In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features specified as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features. In addition, as used in the present invention, "installed", "connected", "connected", and one element is "set" on another element should be understood in a broad sense, usually only indicating that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the connection, coupling, cooperation or transmission between the two elements can be direct or indirect through an intermediate element, and cannot be understood as indicating or implying the spatial position relationship between the two elements, that is, one element can be in any orientation such as inside, outside, above, below or on one side of another element, unless the content clearly indicates otherwise. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used relative to the exemplary embodiments as they are shown in the figures, with the upward or upper direction toward the top of the corresponding figure, and the downward or lower direction toward the bottom of the corresponding figure.

[0038] The utility model provides an electrostatic chuck, comprising a base layer 10, a dielectric layer 20 and an electrode group 30;

[0039] like Figure 1 As shown, the electrostatic chuck is in the shape of a disk as a whole, and the base layer 10 and the dielectric layer 20 are both adaptively configured as circular structures.

[0040] The base layer 10 is preferably made of insulating material. As the base of the electrostatic chuck, the base layer 10 has the function of ensuring the overall structural strength of the electrostatic chuck. The material of the base layer 10 can be selected based on the adaptability of actual use requirements, such as ceramics, alumina and other materials.

[0041] The dielectric layer 20 is used to directly contact the wafer and adsorb the wafer through electrostatic action. The resistivity of dielectrics is generally very high and they are called insulators. Therefore, dielectrics are usually insulators that can be polarized. Any phenomenon that produces a macroscopically non-zero electric dipole moment under the action of an external electric field, thereby forming a macroscopic bound charge, is called polarization. Materials that can produce polarization are collectively referred to as dielectrics. The charged particles of the dielectric are tightly bound by the internal forces of atoms and molecules or the forces between molecules, so the charges of these particles are bound charges. Under the action of an external electric field, these charges can move in a microscopic range, resulting in polarization. In an electrostatic field, an electric field can exist inside the dielectric layer, which is the basic difference between dielectrics and conductors.

[0042] In this embodiment, the dielectric layer 20 can be made of aluminum nitride or aluminum oxide ceramics, which have good mechanical strength, high temperature resistance, and thermal conductivity. In other alternative embodiments, the dielectric layer 20 can also be selected based on actual use requirements, such as glass, resin, and polymer.

[0043] The electrode group 30 is located between the dielectric layer 20 and the base layer 10 .

[0044] The electrode group 30 is connected to an external power source to generate an electrostatic force electric field to polarize the dielectric layer 20 and thereby adsorb the wafer.

[0045] The dielectric layer 20 is a thin sheet structure, which is divided into a plurality of adsorption regions 21. Figure 2 As shown, the dielectric layer 20 is circular and has eight independent adsorption regions 21. Each adsorption region 21 is symmetrically distributed around the center of the dielectric layer 20. Each adsorption region 21 is fan-shaped, with a central angle of 60°. Furthermore, each adsorption region 21 is radially divided into a first fan-shaped sub-region 211 and a second fan-shaped sub-region 212. This arrangement effectively divides the dielectric layer 20 into 16 regions.

[0046] Please refer to Figure 3 As shown, the electrode group 30 includes a plurality of electrodes. Along a direction perpendicular to the dielectric layer 20 , one adsorption region 21 corresponds to two of the electrodes.

[0047] Taking one of the adsorption regions 21 as an example, the first sub-region 211 and the second sub-region 212 in the adsorption region each correspond to an electrode, wherein the first sub-region 211 corresponds to the first electrode 311, and the second sub-region 212 corresponds to the second electrode 312, and the first electrode 311 and the second electrode 312 are independent of each other and not connected; similarly, the 16 regions of the dielectric layer 20 each correspond to an electrode, so the electrode group 30 includes 16 independent electrodes, each of which can be independently controlled to adjust the electrostatic adsorption force in the corresponding region of the dielectric layer 20.

[0048] In this embodiment, each electrode comprises a reciprocatingly bent electrode wire. The electrode wire can be made of a conductive material such as a conductive metal or conductive plastic. Each electrode wire is bent to form a planar shape, and the electrode conforms to the shape of the corresponding region. For example, the first electrode 311 corresponds to the first subregion 211, so the first electrode 311 bends to form a fan-shaped planar structure that matches the first subregion 211. Similarly, the second electrode 312 corresponds to the second subregion 212, so the second electrode 312 bends to form a fan-shaped planar structure that matches the second subregion 212.

[0049] Please refer to Figure 3 As shown, the electrode includes a plurality of electrode wires, each of which is an arc structure. Each electrode wire extends along the circumference of the dielectric layer 20, and each electrode wire is concentrically distributed. Adjacent electrode wires along the radial direction of the dielectric layer 20 are connected end to end in sequence, forming a reciprocating bending structure. The bending structure is adapted to the shape of the corresponding area so that a uniform electrostatic adsorption force is generated in the area. In other alternative embodiments, the bending method of the electrode wire can be a straight reciprocating bending or other bending structure. It should be ensured that the electrode wire is distributed as evenly as possible in the corresponding area to ensure that a uniform electric field distribution is formed in each area of ​​the dielectric layer 20, thereby ensuring a uniform electrostatic adsorption force of the dielectric layer 20.

[0050] In this embodiment, the material of the electrode can be selected from metals with good conductivity, such as aluminum, copper, and tungsten. The electrode is connected to an external power supply group, which changes the electric field strength by adjusting the voltage applied to the electrode, thereby changing the electrostatic adsorption force on the dielectric layer 20. When the electrode is connected to a high-voltage DC power supply, polarized charges are generated on the surface of the dielectric layer, thereby forming an electric field. This electric field will further generate polarized charges on the surface of the wafer placed on the electrostatic chuck, and through the principle of electrostatic charge attraction, the wafer is firmly adsorbed on the surface of the dielectric layer 20 of the electrostatic chuck. When releasing the wafer, the residual charge can be eliminated by turning off the high-voltage DC power supply or applying a reverse electrostatic voltage, thereby achieving the release of the wafer.

[0051] In this embodiment, each electrode can be independently controlled by an external power supply, allowing the electrostatic adsorption force of each adsorption region or sub-adsorption region in the dielectric layer 20 to be independently controlled and adjusted. Therefore, for wafers with severe warpage or other deformations, the electrostatic chuck can independently adjust the adsorption force at specific locations to accommodate wafers with varying degrees of warpage and deformation. This makes it suitable for adsorption of wafers with severe warpage or other deformations. This adsorption method can also improve localized adsorption force or localized stress concentration on the wafer, making the adsorption force more uniform and thereby alleviating scratches and wrinkles on the wafer caused by uneven adsorption.

[0052] Compared with the vacuum chuck, the electrostatic chuck does not rely on vacuum for its adsorption force. When there is a local gap between the wafer and the chuck, the wafer is adsorbed by increasing the electrostatic adsorption force, and almost all of the adsorption force acts on the wafer, making the electrostatic adsorption force more controllable and improving the reliability of the chuck adsorption. The electrostatic chuck does not require vacuum during the adsorption process, so there is no air flow during the adsorption process. Therefore, during the adsorption process, small particles will not be sucked into the space between the wafer and the chuck with the air, which is beneficial to improving the adsorption effect and improving the local deformation of the wafer surface caused by small particles, thereby improving the processing accuracy. The electrostatic chuck does not require a complex air path, which helps to reduce the frequency of subsequent operation and maintenance. The electrostatic chuck can be used for adsorption of wafers with special processes such as perforation or high-degree bending and warping. It can also be used for adsorption of conductors, semiconductors, insulators and porous materials, making the electrostatic chuck more applicable. The electrostatic chuck has a fast response speed and can be switched on and off quickly, without the stress residual problem of vacuum adsorption. The electrostatic chuck does not require vacuum during the adsorption process and can be used simultaneously in atmospheric and vacuum environments, further improving its scope of application.

[0053] In this embodiment, the dielectric layer 20 is circular, and therefore is divided into several sector-shaped adsorption regions based on the shape of the dielectric layer 20. In other alternative embodiments, the specific shape of the dielectric layer 20 can be adaptively adjusted based on the shape of the wafer being adsorbed. For example, if the wafer is square, the dielectric layer 20 can be adaptively configured to have a square structure, and the electrostatic chuck as a whole can be adaptively configured to have a square structure. In this case, the shape of each adsorption region can also be adaptively adjusted based on the shape of the dielectric layer 20. For example, each adsorption region can be configured to have a square shape, thereby dividing the dielectric layer 20 into a square grid.

[0054] In this embodiment, the dielectric layer 20 is divided into eight sector-shaped adsorption regions, each of which is further divided into a first sub-region 211 and a second sub-region 212. In other alternative embodiments, the number and shape of the adsorption regions can be adaptively adjusted. The number of sub-regions within each adsorption region can also be adaptively adjusted. By increasing the number of adsorption regions and sub-regions, more refined adjustment and control of the adsorption force can be achieved.

[0055] In this embodiment, two electrodes are provided in each adsorption region 21, namely, one electrode in each of the first sub-region 211 and the second sub-region 212. The voltage is adjusted by adjusting the electrodes in each region, thereby adjusting the local electrostatic adsorption force. In other alternative embodiments, the number of electrodes in each adsorption region 21 and each sub-region can be adjusted based on actual usage needs. For example, the number of electrodes in each adsorption region 21 can be increased and distributed among the sub-regions. For example, since the area of ​​the second sub-region 212 is larger, the number of electrodes corresponding to the second sub-region 212 can be increased accordingly.

[0056] In this embodiment, each adsorption region 21 has the same area, but the first sub-region 211 and the second sub-region 212 have different areas and shapes. The first sub-region 211 is fan-shaped, the second sub-region 212 is fan-shaped, and the area of ​​the second sub-region 212 is slightly larger than the area of ​​the first sub-region 211. In other alternative embodiments, the sub-regions under the adsorption region 21 can be configured to have the same area and shape. For example, the adsorption region 21 can be divided into a grid structure of uniform size and shape, with each grid serving as a sub-region.

[0057] Furthermore, the electrostatic chuck further includes a pressure-sensitive layer 40 , which is located between the electrode group 30 and the base layer 10 . The pressure-sensitive layer 40 is used to detect the pressure distribution on the surface of the dielectric layer 20 .

[0058] To prevent the electrode group 30 from directly contacting the piezoresistive layer 40, which could interfere with the current flow and cause damage, an insulating layer 50 is added in this embodiment. The insulating layer 50 is positioned between the electrode group 30 and the piezoresistive layer 40 to provide insulation. The piezoresistive layer 40 is evenly laid flat on the base layer 10, effectively preventing breakdown of the lower RF electrode.

[0059] The insulating layer 50 may be made of aluminum nitride or aluminum oxide ceramics because of their good mechanical strength, high temperature resistance and thermal conductivity. Of course, the insulating layer 50 may be made of a material that is adaptable based on actual use requirements.

[0060] The pressure-sensitive layer 40 is used to collect force after the wafer is adsorbed on the dielectric layer 20 , so as to provide feedback on the force applied to the dielectric layer 20 .

[0061] Please refer to Figure 4 As shown, in this embodiment, the pressure-sensitive layer 40 is a pressure-sensitive sensor composed of concentrically distributed annular coils, each of which is evenly laid on the base layer 10. When the coil is subjected to pressure, the resistance changes with the pressure, and the pressure distribution on the surface of the dielectric layer 20 is obtained by detecting the resistance change.

[0062] In other alternative embodiments, an existing piezoresistive pressure sensor, such as an RXD pressure sensor, can be used. This sensor is manufactured by transferring nano-force-sensitive materials, silver paste, and other materials onto a substrate, drying and curing them. Its piezoresistive characteristic exhibits a power function relationship between resistance and pressure. The pressure-sensitive layer 40 can also utilize other existing pressure sensors. The structure, configuration, and operating principles of the pressure-sensitive layer 40 are all prior art and will not be further described here.

[0063] The electrostatic chuck cannot rely on vacuum suction to obtain a vacuum value to determine whether a chip is adsorbed on the chuck. If it relies solely on the machine memory, there may be a risk that the actual value will not match the memory storage. The setting of the above-mentioned pressure-sensitive layer 40 can be used to determine whether a chip is adsorbed on the electrostatic chuck through pressure detection, which is used to accurately identify chip adsorption and reduce the risk of misjudgment. In addition, the pressure-sensitive layer 40 can collect the pressure distribution map of the dielectric layer 20 according to the force applied to the chip on the electrostatic chuck. If the pressure is low in an area, there may be a weak adsorption force. The electrostatic adsorption force can be increased by increasing the voltage of the electrode corresponding to the area. If the locally collected pressure is large, there may be a situation such as particulate contamination. The machine alarm is linked to the alarm for alarm processing, or the voltage of the electrode corresponding to the area is reduced to reduce the local electrostatic adsorption force to obtain a more uniform pressure distribution.

[0064] The electrostatic chuck also includes an ejector pin and a helium channel (not shown in the accompanying drawings). The ejector pin is used to transport the wafer. A mounting hole is provided in the center of the electrostatic chuck, and the ejector pin is positioned within the mounting hole in a retractable manner. The ejector pin is connected to an external lift drive mechanism. When a wafer needs to be transported to the electrostatic chuck, the ejector pin rises to receive the wafer, then descends to place the wafer on the surface of the dielectric layer 20 of the electrostatic chuck.

[0065] In this embodiment Figure 1 and Figure 2 In order to clearly show the structure of the electrostatic chuck, the structure of the mounting holes is not shown. Figure 3 and Figure 4As shown, in this embodiment, three mounting holes 11 are provided. These holes extend through the electrostatic chuck and extend along the chuck's axis. Each hole is symmetrically arranged about the chuck's central axis, and each hole is fitted with a pin. The pin is hollow, creating a helium channel within the pin. Helium can flow into the microscopic space between the chuck surface and the wafer while the wafer is being held. This improves thermal conductivity between the wafer and the chuck, enhancing heat dissipation.

[0066] The electrostatic chuck is also equipped with cooling channels, which are located on a base layer 10. The base layer 10 is typically multi-layered, with the cooling channels located between adjacent layers. These channels allow coolant to flow through the electrostatic chuck, enhancing its heat dissipation and enabling temperature control. This helps regulate the wafer temperature and improve temperature uniformity.

[0067] The structure of the ejector pin and the cooling channel is consistent with that of the existing chuck. The structure, setting method and working principle of the ejector pin and the cooling channel are all existing technologies and will not be described in detail here.

[0068] Please refer to Figure 5 As shown, this embodiment further provides an electrostatic adsorption device, which includes the electrostatic chuck and a power supply group 60 described above, and one of the electrodes is individually connected to one of the power supply groups 60.

[0069] The power supply assembly 60 includes an RF power supply 61 and a voltage regulator 62. The RF power supply 61 and the voltage regulator 62 are connected to each other, and the voltage regulator 62 is connected to the electrodes. The RF power supply 61 provides high-voltage direct current to the electrodes, and the voltage regulator is used to regulate the voltage of the RF power supply 61. The electrodes in each region are powered and voltage-regulated by a separate RF power supply and transformer, enabling regional electrode voltage regulation.

[0070] The configuration of the voltage regulator 62 can realize manual voltage adjustment, so that the energy consumption of electrostatic adsorption is reduced while maintaining basic functions, thereby increasing economic benefits.

[0071] A radio frequency power supply (RF Power Supply or RFGenerator for short) is a power supply device that can generate a fixed-frequency sinusoidal voltage or pulse voltage. Its operating frequency is usually within the radio frequency range (3KHz to 300GHz) and has a certain power output capability. The core function of an RF power supply is to convert low-frequency electrical energy into high-frequency electric field energy to meet the needs of specific applications. The working principle of an RF power supply involves a series of complex circuit systems, mainly including key components such as transformers, rectifier circuits, filter circuits, regulation circuits, and high-frequency oscillation circuits. Among them, the high-frequency oscillation circuit is the core of the RF power supply, which is responsible for converting a DC voltage into a high-frequency AC voltage and stably outputting it to subsequent devices.

[0072] Specifically, the working process of RF power supply is as follows:

[0073] Input power: The RF power supply first receives low-frequency power from the grid or other power sources.

[0074] Rectification and filtering: The rectifier circuit converts AC power into DC power, and the filter circuit removes the ripple in the DC power to obtain a stable DC voltage.

[0075] High-frequency oscillation: The high-frequency oscillation circuit converts a stable DC voltage into a high-frequency AC voltage. This process depends on the design of the oscillator, including LC oscillators, crystal oscillators, etc.

[0076] Power amplification and matching: To meet the needs of specific applications, high-frequency AC voltage needs to be amplified by a power amplifier and matched with the load through an impedance matcher to ensure efficient energy transmission.

[0077] Output high-frequency electric field: Ultimately, the RF power supply outputs high-frequency electric field energy for use by subsequent devices such as antennas, plasma generators, RF induction heaters, and electrostatic chucks.

[0078] Due to their unique performance characteristics, RF power supplies have been widely used in various fields. They play a vital role in semiconductor processing equipment, particularly in etching and thin-film deposition equipment. They generate stable high-frequency electric fields to stimulate plasma reactions, enabling precise etching and deposition of materials. The structure and operating principles of RF power supplies are well-known technologies and will not be elaborated here.

[0079] In this embodiment, the RF power supply utilizes existing equipment, such as a commercially available RSG-type RF power supply. Some existing RF power supplies include a transformer, so the power supply assembly 60 may include only the RF power supply 61 without the external voltage regulator 62. Furthermore, the voltage regulator 62 is also conventional, such as a commercially available T-type RF transformer. The structure and operating principle of the voltage regulator 62 are both conventional and will not be further described here.

[0080] In addition, the electrostatic adsorption device further includes a controller (not shown in the figure), which is connected to the power supply group 60. Specifically, the controller is connected to the voltage regulator 62; the controller is also connected to the pressure-sensitive layer 40.

[0081] The pressure-sensitive layer 40 transmits the detected pressure signal to the controller. The controller calculates and determines the pressure in different areas based on the pressure distribution map collected by the pressure-sensitive layer 40. If the pressure distribution uniformity meets the requirements, no adjustment is made. If the required uniformity is not achieved, a control signal is sent to the voltage regulator 62 to control the RF power supply 61 to control the voltage and adjust the electrostatic adsorption force. By adjusting the adsorption force of each area of ​​the dielectric layer 20, the wafer adsorption requirements are met. Ultimately, the wafer's bending, warping, and other higher-order deformations caused by the wafer itself or during processing are overcome, ensuring that the wafer is uniformly adsorbed by the electrostatic chuck to achieve the required flatness.

[0082] The controller usually includes at least one processor, which can be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0083] The at least one processor can communicate with a plurality of peripheral devices via the bus subsystem. These peripheral devices may include a storage system, a user interface input device, a user interface output device, and a network interface.

[0084] The network interface includes one or more interfaces known in the art, such as LAN, WLAN, Bluetooth, other wired and wireless interfaces, and the like.

[0085] User interface input devices may include keyboards, pointing devices such as mice, trackballs, touchpads or graphics tablets, scanners, foot pedals, joysticks, touch screens embedded in displays, audio input devices such as voice recognition systems, microphones, and other types of input devices. Generally speaking, the term "input device" is intended to include a variety of conventional and proprietary devices and methods for inputting information into a controller.

[0086] User interface output devices may include a display subsystem, a printer, a fax machine, or a non-visual display such as an audio output device. The display subsystem may be a flat panel device such as a liquid crystal display (LCD), a light emitting diode (LED) display, a touch screen display, etc. The display subsystem may also provide a non-visual display, such as via an audio output device. Generally speaking, the term "output device" is intended to include various conventional and proprietary devices and methods for outputting information from a controller to a user.

[0087] The storage system can store the basic programming and data structures that implement the various functions of the present invention. For example, as described herein, the databases and modules that implement the functions of the method of the present invention can be stored in the storage system. These software modules are usually executed by a processor. In a distributed environment, the software modules can be stored on multiple computer systems and executed by the processors of multiple computer systems. The storage system usually includes a memory subsystem and a file storage system. The memory subsystem usually includes multiple memories, including a main random access memory (RAM) for storing instructions and data during program execution and a read-only memory (ROM) in which fixed instructions are stored. The file storage subsystem provides permanent (non-volatile) storage for program and data files. The file storage system can include a hard drive and associated removable media, a compact disc (CD) drive, an optical drive, a DVD, a solid-state memory and / or other removable media. One or more of these drives can be located at a remote location on other connected computers at other sites connected to the controller. The modules that implement the functions of the present invention can be stored by the file storage system.

[0088] The bus subsystem enables the various components and subsystems of a controller to communicate with each other as intended. The various subsystems and components of a controller do not need to be in the same physical location; instead, they can be distributed across a distributed network. The bus subsystem can consist of a single bus or multiple buses, depending on the needs.

[0089] The controller described above is intended to be used as an example only to illustrate only one embodiment of the present invention. Due to the ever-changing nature of computers and networks, in other alternative embodiments, the controller may also have certain differences from the configuration of the controller described above, which will not be repeated here.

[0090] This embodiment further provides a semiconductor device including the electrostatic adsorption device described above. The semiconductor device may be a chemical vapor deposition device, a physical vapor deposition device, an etching device, or any other semiconductor device including an electrostatic chuck.

[0091] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0092] The above description is only a description of the preferred embodiment of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. An electrostatic chuck, characterized in that: including a base layer, a dielectric layer and an electrode group; The electrode group is located between the dielectric layer and the base layer; The dielectric layer is divided into a plurality of adsorption regions, and the electrode group includes a plurality of electrodes; Along a direction perpendicular to the dielectric layer, one of the adsorption regions in the dielectric layer corresponds to at least one of the electrodes.

2. The electrostatic chuck according to claim 1, wherein The electrostatic chuck further includes a pressure-sensitive layer, which is located between the electrode group and the base layer and is used to detect pressure distribution on the surface of the dielectric layer.

3. The electrostatic chuck according to claim 2, wherein: The electrostatic chuck further includes an insulating layer located between the electrode group and the pressure-sensitive layer.

4. The electrostatic chuck according to claim 1, wherein The electrode includes an electrode wire bent back and forth.

5. The electrostatic chuck according to claim 1, wherein The dielectric layer is circular, and each of the adsorption regions is fan-shaped.

6. The electrostatic chuck according to claim 5, wherein: The central angles of the adsorption regions are the same.

7. The electrostatic chuck according to claim 5, wherein: The adsorption area is divided radially into a first sub-area in the shape of a sector and a second sub-area in the shape of a sector ring; Along a direction perpendicular to the dielectric layer, each of the first sub-region and the second sub-region corresponds to one of the electrodes.

8. An electrostatic adsorption device, characterized in that: The electrostatic chuck comprises the electrostatic chuck according to any one of claims 1 to 7 and a power supply group, wherein each electrode is individually connected to the power supply group.

9. The electrostatic adsorption device according to claim 8, wherein: The electrostatic adsorption device further includes a controller connected to the power supply group; When the electrostatic chuck includes a pressure-sensitive layer, the controller is connected to the pressure-sensitive layer.

10. A semiconductor device, characterized in that: The semiconductor device includes the electrostatic adsorption device as claimed in claim 8 or 9.

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