Light emitting device and product
By setting up a retaining wall outside the light-transmitting wall and filling it with electrical isolation material, the light loss and optical crosstalk problems of the light-emitting device are solved, the production is simplified, the cost is reduced, and the electrical isolation and stability are improved.
Patent Information
- Application Number
- CN202422216257.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-10
- Publication Date
- 2025-09-09
- Estimated Expiration
- 2034-09-10
AI Technical Summary
Existing light-emitting devices have problems with light loss and optical crosstalk, and the production steps are cumbersome and costly. The metal aluminum retaining wall is easily deformed and the electrical isolation effect is poor.
A retaining wall is set outside the light-transmitting wall. The retaining wall is attached to the light-transmitting wall, adjacent retaining walls are spaced apart, and filled with electrical isolation materials. The retaining wall is made of titanium dioxide, metal aluminum or metal tungsten, with a thickness of 3-5 microns, forming an array distribution.
Effectively prevent optical crosstalk, reduce light loss, simplify production processes, reduce costs, and improve electrical isolation effects and the stability of light-emitting units.
Smart Images
Figure CN223322375U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a light-emitting device and a product provided with the light-emitting device. Background Art
[0002] Light-emitting devices (such as Micro LEDs) are widely used in various products, such as displays, monitors, lamps, projectors, wearable devices (such as smart watches, AR / VR devices, etc.), mobile terminals (such as mobile phones, tablets, notebooks, etc.), transportation vehicles, etc.
[0003] like Figure 1 As shown, a conventional light-emitting device 9 includes a substrate 91, a GaN base, a buffer layer 92, and a light-emitting unit 93, which are sequentially distributed. The light-emitting unit 93 includes a light-emitting module 931 and a light-transmitting wall 932. The light-emitting module 931 includes n-type GaN 9311, a multi-layer quantum well 9312, and a p-type GaN 9313, which are sequentially distributed. The n-type GaN 9311 is located between the buffer layer 92 and the multi-layer quantum well 9312. The light-transmitting wall 932 is provided around the periphery of the light-emitting module 931 to protect the light-emitting module 931 and ensure its electrical stability. However, the light emitted by the light-emitting module 931 easily passes through the light-transmitting wall 932 and scatters from all sides, resulting in light loss. In addition, optical crosstalk is easily generated between the light-emitting modules 931.
[0004] like Figure 2 As shown, an existing optimization method is to fill metal aluminum 94 between the light-emitting modules 931 as a retaining wall to prevent light crosstalk between the light-emitting modules 931. However, a disadvantage of this optimization method is that the metal aluminum 94 easily creates voids 941 when filling the retaining wall. The heat generated by the light-emitting device 9 when emitting light can cause the retaining wall with the void 941 to deform, thereby reducing the performance of the light-emitting device 9.
[0005] In this regard, Figure 3 As shown, in order to further optimize the light-emitting device 9 after the above-mentioned optimization treatment, after the metal aluminum retaining wall 94 is formed, the middle area of the metal aluminum retaining wall 94 (at the location of the cavity 941) is etched to form a to-be-filled area. Then, the to-be-filled area is filled with metal tungsten 95 to improve the filling capacity of the retaining wall. This prevents the metal aluminum retaining wall 94 from deforming due to the presence of the cavity 941 when the light-emitting device 9 emits light, thereby effectively improving the performance, luminous efficiency, and reliability of the light-emitting device 9. However, this optimization treatment still has shortcomings:
[0006] First, the need to use two different metal materials results in complicated production steps and high production costs for the light emitting device 9;
[0007] Second, since the metal aluminum 94 and the metal tungsten 95 almost fill the gaps between the light emitting modules 931 , and the metal aluminum 94 and the metal tungsten 95 are conductive, the light emitting modules 931 cannot be well electrically isolated. Summary of the Invention
[0008] The main purpose of the utility model is to provide a light emitting device which prevents light loss, has a good light crosstalk effect, is easy to produce and has a low production cost.
[0009] Another object of the present invention is to provide a product provided with the above-mentioned light-emitting device.
[0010] In order to achieve the main purpose of the present invention, the present invention provides a light-emitting device, including a substrate and more than two light-emitting units, the light-emitting unit including a light-emitting module and a light-transmitting wall, the light-emitting module including n-type GaN, multi-layer quantum well and p-type GaN distributed in sequence, the light-transmitting wall being adhered and arranged on the periphery of the light-emitting module, wherein the light-emitting unit also includes a retaining wall, the retaining wall being adhered and arranged on the periphery of the light-transmitting wall, the retaining walls of adjacent light-emitting units are not connected to each other and are spaced apart from each other, and a filling layer is provided in the spacing space.
[0011] As can be seen from the above, by setting a retaining wall outside the light-transmitting wall, the light emitted by the light-emitting module can be reflected by the retaining wall, thereby preventing light crosstalk between the light-emitting units; through the design of the retaining wall, the production of this light-emitting device is simpler and the production cost is lower than that of existing light-emitting devices. Since the retaining wall is attached to the light-transmitting wall, the distance between the light-emitting module and the retaining wall is small, thereby better reducing the light loss of the light-emitting unit and making the light of the light-emitting unit more concentrated and not divergent.
[0012] A further solution is that the retaining wall is also used to reflect the light emitted from the periphery of the light-emitting unit; the bottom of the retaining wall is flush with the bottom of the light-emitting module; the top of the retaining wall is flush with the top of the light-emitting module; or the top of the retaining wall is located between the top of the light-emitting module and the top of the multi-layer quantum well.
[0013] As can be seen from the above, by setting the top of the retaining wall to be flush with the top of the light-emitting module, the light-shielding retaining wall can achieve the best effect of preventing light crosstalk and light loss between the light-emitting modules.
[0014] A further solution is that the retaining wall is made of titanium dioxide, metallic aluminum or metallic tungsten.
[0015] As can be seen from the above, this design can ensure the light-shielding wall's reflection and shielding effects on light, thereby ensuring the light-shielding wall's effect of preventing light crosstalk and light loss between light-emitting modules.
[0016] A further solution is that the thickness of the retaining wall is between 3 nanometers and 5 microns.
[0017] As can be seen from the above, this design can not only ensure the strength of the retaining wall, but also ensure the light reflection and shielding effects of the retaining wall, and avoid the retaining wall occupying too much space, while reducing the material consumption of the retaining wall, thereby reducing production costs.
[0018] A further solution is that the light-transmitting wall is made of silicon dioxide, aluminum oxide, silicon nitride, silicon oxynitride or polyimide.
[0019] As can be seen from the above, this design enables the translucent fence to protect the light-emitting unit, preventing the light-emitting unit from being invaded by external impurities, water vapor and chemicals, and at the same time avoiding short circuits or leakage between adjacent light-emitting units, ensuring that each light-emitting unit can work independently and stably. At the same time, it can also assist in controlling the propagation direction of light emitted by the light-emitting module, reducing the reflection loss and scattering loss of light inside the light-emitting unit.
[0020] A preferred solution is that more than two light-emitting units are distributed in an array; and the filling layer is silicon dioxide.
[0021] As can be seen from the above, by filling the gaps between the light-emitting units with silicon dioxide as a filling layer, better electrical isolation is achieved between the light-emitting units, thereby ensuring the stability and reliability of the light-emitting units.
[0022] Another preferred solution is that the light-emitting module is columnar; the light-transmitting wall is formed by a patterning process and an etching process, and the retaining wall is formed by a patterning process and an etching process.
[0023] As can be seen from the above, the shape of the light-emitting module can be adjusted according to needs and layout, so as to expand the application range and practicality of the light-emitting device and enhance the flexibility of the light-emitting unit configuration.
[0024] Another preferred solution is that a GaN base and a buffer layer are provided on the substrate, and the bottom of the retaining wall is provided on the GaN base and the buffer layer.
[0025] A further solution is that the light emitting device further includes an n-type GaN layer, the n-type GaN layer is arranged between the buffer layer and the light emitting unit, and the bottom of the retaining wall is arranged on the n-type GaN layer.
[0026] It can be seen from the above that this design can improve the performance and quality of the light-emitting device.
[0027] In order to achieve another purpose of the present invention, the present invention provides a product, wherein the product is provided with the above-mentioned light-emitting device.
[0028] As can be seen from the above, the product provided with the above-mentioned light-emitting device is simpler to produce, has lower production costs, and has better light emission effect and / or better display image quality. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] Figure 1 It is a structural schematic diagram of the first existing light-emitting device.
[0030] Figure 2 It is a structural schematic diagram of the second existing light-emitting device.
[0031] Figure 3 It is a schematic structural diagram of the third existing light-emitting device.
[0032] Figure 4 It is a structural schematic diagram of the first embodiment of the light-emitting device of the present invention at a first viewing angle.
[0033] Figure 5 It is a structural schematic diagram of the first embodiment of the light-emitting device of the present invention at a second viewing angle.
[0034] Figure 6 This is a schematic diagram of the production of the first embodiment of the light-emitting device of the present invention.
[0035] Figure 7 It is a structural schematic diagram of the second embodiment of the light emitting device of the present invention.
[0036] The present invention will be further described below with reference to the accompanying drawings and embodiments. DETAILED DESCRIPTION
[0037] First embodiment of the light emitting device
[0038] Reference Figure 4 and Figure 5 The light emitting device 100 includes a substrate 1, a GaN substrate, a buffer layer 2 and a light emitting unit 3. In this embodiment, the substrate 1, the GaN substrate and the buffer layer 2 are arranged in sequence; wherein the substrate 1 is preferably a silicon substrate 1.
[0039] The number of light-emitting units 3 is more than two, and the light-emitting unit 3 includes a light-emitting module 31, a light-transmitting wall 32 and a retaining wall 33. The light-emitting module 31 includes n-type GaN 311, a multi-layer quantum well 312 and a p-type GaN 313 distributed in sequence, and the n-type GaN 311 is located between the buffer layer 2 and the multi-layer quantum well 312.
[0040] A light-transmitting wall 32 is disposed around the periphery of the light-emitting module 31. The top of the light-transmitting wall 32 is preferably substantially flush with the top of the light-emitting module 31 (i.e., the top of the p-type GaN 313). The light-transmitting wall 32 is preferably made of silicon dioxide, aluminum oxide, silicon nitride, silicon oxynitride, or polyimide. The light-transmitting wall 32 protects the light-emitting units 3 from external impurities, moisture, and chemical substances. It also prevents short circuits or leakage between adjacent light-emitting units 3, thereby ensuring that each light-emitting unit 3 can operate independently and stably. Furthermore, the light-transmitting wall 32 helps control the propagation direction of light emitted by the light-emitting module 31, thereby reducing reflection and scattering losses within the light-emitting units 3. Alternatively, the top of the light-transmitting wall 32 can be slightly higher or lower than the top of the light-emitting module 31, but this would diminish the function of the light-transmitting wall 32 as a passivation layer.
[0041] The retaining wall 33 is positioned around the outer perimeter of the light-transmitting enclosure 32. The retaining wall 33 is positioned outside the light-transmitting enclosure 32 so that light emitted by the light-emitting module 31 is reflected by the retaining wall 33, thereby preventing optical crosstalk between the light-emitting units 3. Furthermore, the provision of the retaining wall 33 and its location and structural design make the light-emitting device 100 easier to manufacture and less expensive than existing light-emitting devices. Furthermore, because the retaining wall 33 is positioned around the light-transmitting enclosure 32, the distance between the light-emitting module 31 and the retaining wall 33 is reduced, thereby further reducing light loss within the light-emitting units 3 and concentrating the light from the light-emitting units 3.
[0042] Preferably, the bottom of the retaining wall 33 is flush with the bottom of the light-emitting module 31, and the top of the retaining wall 33 is flush with the top of the light-emitting module 31, so that the light-shielding retaining wall can achieve the best effect in preventing light crosstalk and light loss between the light-emitting modules 31. Of course, as an alternative solution, the top of the retaining wall 33 can also be located between the top of the light-emitting module 31 and the top of the multi-layer quantum well 312; preferably, the top of the retaining wall 33 is slightly lower than the top of the light-emitting module 31, but this design will weaken the retaining wall 33's ability to prevent light crosstalk and light loss.
[0043] Furthermore, the thickness of the barrier wall 33 is preferably between 3 nanometers and 5 micrometers. This thickness design ensures both the strength of the barrier wall 33 and its ability to reflect and block light. This prevents the barrier wall 33 from occupying too much space, reduces the material used, and thus reduces production costs. The barrier wall 33 is preferably made of titanium dioxide, aluminum, or tungsten to ensure both its ability to reflect and block light, thereby ensuring that the barrier wall effectively prevents light crosstalk and light loss between the light-emitting modules 31.
[0044] The two or more light-emitting units 3 are arranged in an array; the array distribution can be linear (such as a straight line, a curve, etc.), rectangular, circular (such as an annular, concentric annular, etc.), polygonal, or random, so that the number and array form of the light-emitting units 3 can be flexibly adjusted according to the type and requirements of the product to be used, thereby ensuring the lighting effect of the light-emitting device 100. Furthermore, the light-emitting module 31, the light-transmitting wall 32, and the retaining wall 33 are preferably columnar. For example, the light-emitting module 31, the light-transmitting wall 32, and the retaining wall 33 are all arranged in a cylindrical, quadrangular, or triangular prism shape. Of course, the light-emitting module 31, the light-transmitting wall 32, and the retaining wall 33 can also be other columnar structures. It can be seen that the shape of the light-emitting module 31 can be adjusted according to needs and layout to expand the scope of application and practicality of the light-emitting device 100 and enhance the flexibility of the arrangement of the light-emitting units 3.
[0045] In addition, the retaining walls 33 of any adjacent light-emitting units 3 of the light-emitting device 100 are not connected to each other and are spaced apart from each other. In order to better electrically isolate the light-emitting units 3 to ensure the stability and reliability of the operation of the light-emitting units 3, a filling layer is set in the spacing space between any adjacent light-emitting units 3, and the filling layer is preferably silicon dioxide.
[0046] The following, combined Figure 6 The manufacturing process of the light emitting device 100 is briefly described:
[0047] First, if Figure 6 As shown in (a), a GaN base, a buffer layer 2, an n-type GaN 311, a multi-layer quantum well 312 and a p-type GaN 313 are epitaxially grown on a substrate 1 in sequence.
[0048] Then, if Figure 6 As shown in (b), a plurality of light-emitting modules 31 are patterned on the n-type GaN 311 , the multi-layer quantum well 312 and the p-type GaN 313 , and isolation regions are etched between the light-emitting modules 31 .
[0049] Then, if Figure 6 As shown in (c), a light-transmitting material (such as silicon dioxide, aluminum oxide, silicon nitride, silicon oxynitride or polyimide) is deposited on the buffer layer 2, the n-type GaN 311, the multi-layer quantum well 312 and the p-type GaN 313.
[0050] Then, if Figure 6 As shown in (d), the light-transmitting material is patterned and light-transmitting retaining walls are etched.
[0051] Then, if Figure 6 As shown in (e), a light-shielding material (such as titanium dioxide, metal aluminum or metal tungsten) is deposited on the buffer layer 2, the p-type GaN 313 and the transparent barrier wall.
[0052] Then, if Figure 6 As shown in (f), the light-shielding material is patterned and light-blocking walls are etched.
[0053] In subsequent processing, the gaps between the light-emitting units 3 are filled with silicon dioxide and wires are arranged.
[0054] In summary, the design of the light-emitting device 100 enables the light-emitting device 100 to have the advantages of preventing light loss, having a good optical crosstalk effect, being easy to produce, and having a low production cost.
[0055] Second embodiment of the light emitting device
[0056] Reference Figure 7 The difference between this embodiment and the first embodiment of the light-emitting device is that, in this embodiment, the light-emitting device 100 further includes an n-type GaN layer 4, the n-type GaN layer 4 is arranged between the buffer layer 2 and the light-emitting unit 3, and the bottom of the retaining wall 33 is arranged on the n-type GaN layer 4; this design can improve the performance and quality of the light-emitting device 100; wherein, the n-type GaN layer 4 acts as a buffer layer.
[0057] Product Examples
[0058] Products equipped with the aforementioned light-emitting devices can include display screens, monitors, lamps, projectors, wearable devices (such as smartwatches and AR / VR devices), mobile terminals (such as mobile phones, tablets, and laptops), and vehicles. In the case of vehicles, the display screens, instrument panels, heads-up displays, and lights on these vehicles can all be manufactured using these light-emitting devices. Products equipped with these light-emitting devices offer simplified production, lower production costs, and improved light output and / or higher-quality display images.
[0059] Finally, it should be emphasized that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various changes and modifications. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.
Claims
1. A light-emitting device comprising a substrate and two or more light-emitting units, wherein the light-emitting units include a light-emitting module and a light-transmitting enclosure, wherein the light-emitting module includes n-type GaN, a multi-layer quantum well, and a p-type GaN layer distributed in sequence, and the light-transmitting enclosure is laminated and arranged around the periphery of the light-emitting module, characterized in that: The light-emitting unit further includes a retaining wall, which is arranged on the outer periphery of the light-transmitting wall. The retaining walls of adjacent light-emitting units are not connected to each other and are spaced apart from each other, and a filling layer is provided in the space between them.
2. The light emitting device according to claim 1, wherein: The retaining wall is also used to reflect the light emitted from the periphery of the light-emitting module; The bottom of the retaining wall is flush with the bottom of the light-emitting module; The top of the retaining wall is flush with the top of the light-emitting module; or The top of the retaining wall is located between the top of the light-emitting module and the top of the multi-layer quantum well.
3. The light emitting device according to claim 2, wherein: The retaining wall is made of titanium dioxide, metal aluminum or metal tungsten.
4. The light emitting device according to claim 3, wherein: The thickness of the retaining wall is between 3 nanometers and 5 micrometers.
5. The light emitting device according to any one of claims 1 to 4, characterized in that: The light-transmitting enclosure is made of silicon dioxide, aluminum oxide, silicon nitride, silicon oxynitride or polyimide.
6. The light emitting device according to claim 5, characterized in that: The two or more light-emitting units are distributed in an array; The filling layer is silicon dioxide.
7. The light emitting device according to claim 5, characterized in that: The light-emitting module, light-transmitting wall and retaining wall are columnar; The light-transmitting enclosure is formed by a patterning process and an etching process, and the retaining wall is formed by a patterning process and an etching process.
8. The light emitting device according to claim 5, wherein: A GaN base and a buffer layer are provided on the substrate, and the bottom of the retaining wall is provided on the GaN base and the buffer layer.
9. The light emitting device according to claim 8, wherein: The light emitting device further includes an n-type GaN layer, which is arranged between the buffer layer and the light emitting unit, and the bottom of the retaining wall is arranged on the n-type GaN layer.
10. The product is characterized in that The product is provided with the light-emitting device according to any one of claims 1 to 9.