Crucible support assembly and single crystal furnace

Abstract

The utility model provides a crucible support assembly and a single crystal furnace. The crucible support assembly comprises a crucible support body, the crucible support body is located at the top of a support rod, and a first channel and a second channel which are not communicated with each other are arranged in the support rod; wherein a third channel communicated with the first channel is arranged in the crucible support body, and a fourth channel communicated with the second channel is also arranged in the crucible support body; the third channel is not communicated with the fourth channel; and the first channel, the second channel, the third channel and the fourth channel are all communicated with the single crystal furnace. The first channel and the third channel jointly form a first cooling channel, the second channel and the fourth channel jointly form a second cooling channel, argon is introduced after the single crystal furnace is shut down, and the argon respectively flows through the first cooling channel and the second cooling channel to quickly cool the graphite crucible and components around the graphite crucible; the effect of accelerating the cooling speed of the single crystal furnace table is achieved, the blowing-out time of the single crystal furnace is greatly shortened, and the crystal pulling efficiency and the per unit yield are effectively improved.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal silicon production equipment, and in particular to a crucible support assembly and a single crystal furnace. Background Art

[0002] Czochralski single crystal pulling is a cyclical production process. After each production cycle, the temperature inside the single crystal furnace must cool down to below 300°C before dismantling, cleaning, and preparing for the next production cycle can begin. Because the furnace must maintain a high temperature during production and is equipped with insulation, it takes 6-10 hours to cool down after shutting down. This significant time consumption impacts the single crystal pulling efficiency, and consequently, the output and efficiency of the entire production line.

[0003] The specific area of ​​a single crystal furnace used for growing single crystal silicon is called the single crystal furnace table. The crucible support assembly, located within the single crystal furnace table, is a crucial component of the furnace. It supports the graphite crucible within the furnace. Currently, conventional crucible supports primarily support the graphite crucible and do not accelerate the cooling rate of the single crystal furnace table. Consequently, single crystal furnaces using conventional crucible supports still experience prolonged cooling times.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the Invention

[0005] In response to the shortcomings of the prior art, the purpose of this application is to provide a crucible support assembly and a single crystal furnace. A first channel, a second channel, a third channel, and a fourth channel are provided on the crucible support assembly. The first channel and the third channel together constitute a first cooling channel, and the second channel and the fourth channel together constitute a second cooling channel. After the single crystal furnace is shut down, argon gas can be introduced into the single crystal furnace. The argon gas flows through the first cooling channel and the second cooling channel respectively, rapidly cooling the graphite crucible and the components around the graphite crucible, assisting in the rapid cooling of the graphite crucible and the components around the graphite crucible, thereby accelerating the cooling speed of the single crystal furnace, significantly reducing the shutdown time of the single crystal furnace, and effectively improving the crystal pulling efficiency and unit yield (the number of products produced by a single production unit within a certain period of time).

[0006] To achieve the above objectives, this application adopts the following technical solutions:

[0007] A crucible support assembly, comprising:

[0008] A crucible support body, the crucible support body being located on the top of a support rod, and the support rod being provided with a first channel and a second channel which are not communicated with each other;

[0009] Wherein, a third channel communicating with the first channel is provided in the crucible support body, and a fourth channel communicating with the second channel is also provided in the crucible support body; the third channel and the fourth channel are not communicated with each other;

[0010] The first channel, the second channel, the third channel, and the fourth channel are all connected to the single crystal furnace;

[0011] The third channel is a spiral channel; and / or

[0012] The fourth channel is a spiral channel.

[0013] In some embodiments, the first channel is tubular, and the diameter of the first channel is 8-12 mm; and / or

[0014] The second channel is tubular, and the diameter of the second channel is 8-12 mm; and / or

[0015] The third channel is tubular, and the diameter of the third channel is 8-12 mm; and / or

[0016] The fourth channel is tubular, and the diameter of the fourth channel is 8-12 mm.

[0017] In some embodiments, the diameter of the first channel is smaller than the diameter of the third channel; and the diameter of the second channel is smaller than the diameter of the fourth channel.

[0018] In some embodiments, the number of turns of the third channel around the crucible support body is recorded as N, the number of turns of the fourth channel around the crucible support body is recorded as N', and the difference between N and N' is 1.5-2.5.

[0019] In some embodiments, one end of the third channel away from the first channel is arranged on one side of the crucible holder body, and one end of the fourth channel away from the second channel is arranged on the other side of the crucible holder body; and / or

[0020] One end of the first channel away from the third channel is arranged on one side of the support rod, and one end of the second channel away from the fourth channel is arranged on the other side of the support rod.

[0021] In some embodiments, the third channel wraps around the crucible holder body 1 to 2 times, and the fourth channel wraps around the crucible holder body 2.5 to 4.5 times.

[0022] In some embodiments, the third channel includes an air inlet channel II and an annular channel III; an air inlet I is provided at one end of the air inlet channel II, and the other end of the air inlet channel II is connected to the annular channel III, and an air outlet IV is provided on the annular channel III;

[0023] The fourth channel includes an intake channel b, an annular channel c, an intake channel d, an annular channel e, an intake channel f, and an annular channel g, which are sequentially connected; an intake port a is provided at one end of the intake channel b, and the other end of the intake channel b is connected to the annular channel c; the annular channel c and the annular channel e are connected via the intake channel d, and the annular channel e and the annular channel g are connected via the intake channel f; and the annular channel g is provided with an outlet h;

[0024] Wherein, the first channel is connected to the third channel through the air inlet I, and the air outlet IV is connected to the single crystal furnace;

[0025] The second channel is connected to the fourth channel through the air inlet a, and the air outlet h is connected to the single crystal furnace.

[0026] In some embodiments, a diameter of the third channel is larger than a diameter of the fourth channel.

[0027] In some embodiments, the top end of the first channel is connected to the third channel through a first arc-shaped air inlet channel; a first ZrC-SiC ceramic coating with a thickness of 100-200 μm is provided on the inner side wall of the first arc-shaped air inlet channel;

[0028] The top end of the second channel is connected to the fourth channel through a second arc-shaped air inlet channel, and a second ZrC-SiC ceramic coating with a thickness of 100-200 μm is provided on the inner side wall of the second arc-shaped air inlet channel.

[0029] The present application also provides a single crystal furnace, comprising a support rod and the above-mentioned crucible support assembly.

[0030] In the technical solution of the present application, a first channel, a second channel, a third channel and a fourth channel are provided on the crucible support assembly. The first channel and the third channel together constitute a first cooling channel, and the second channel and the fourth channel together constitute a second cooling channel. After the single crystal furnace is stopped, argon gas can be introduced into the single crystal furnace. The argon gas flows through the first cooling channel and the second cooling channel respectively, and quickly cools the graphite crucible and the components around the graphite crucible, assisting the graphite crucible and the components around the graphite crucible to quickly cool down, thereby accelerating the cooling speed of the single crystal furnace, greatly reducing the shutdown time of the single crystal furnace, and effectively improving the crystal pulling efficiency and unit output. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar components or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0032] Figure 1 Schematic diagram of the structure of the crucible support assembly according to an embodiment of the present application.

[0033] Figure 2 This is a schematic structural diagram of the third channel in the crucible body of the embodiment of the present application.

[0034] Figure 3 Schematic diagram of the structure of the fourth channel in the crucible body of the embodiment of the present application.

[0035] Reference numerals in the figure: 1, supporting rod; 2, crucible support body; 11, first channel; 12, second channel; 13, first arc-shaped air inlet channel; 14, second arc-shaped air inlet channel; 21, third channel; 22, fourth channel. DETAILED DESCRIPTION

[0036] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, the sizes of layers, regions, and elements and their relative sizes may be exaggerated for clarity. The same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be understood as limiting the present application. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other unless there is a conflict.

[0037] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that while the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another. Thus, without departing from the teachings of the present disclosure, a first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. Furthermore, when a second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part is present in the present disclosure.

[0038] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0039] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way are interchangeable where appropriate, so that the embodiments of the present application described herein can, for example, be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0040] The present application provides a crucible support assembly and a single crystal furnace. A first channel, a second channel, a third channel, and a fourth channel are provided on the crucible support assembly. The first channel and the third channel together constitute a first cooling channel, and the second channel and the fourth channel together constitute a second cooling channel. After the single crystal furnace is stopped, argon gas can be introduced into the single crystal furnace. The argon gas flows through the first cooling channel and the second cooling channel respectively, and quickly cools the graphite crucible, assisting the graphite crucible to cool down quickly, thereby accelerating the cooling speed of the single crystal furnace, greatly reducing the shutdown time of the single crystal furnace, and effectively improving the crystal pulling efficiency and unit yield. Specifically, after the single crystal furnace is shut down, argon needs to be continuously introduced into the single crystal furnace and then exhausted. Argon, as an inert gas, can prevent the reaction with oxygen and moisture in the air during the growth of single crystal silicon, thereby protecting the purity and quality of the single crystal silicon. The crucible support assembly (that is, the traditional crucible support assembly) without the first cooling channel and the second cooling channel only serves to support the graphite crucible. Under this type of structure, the introduction of inert gas mainly plays an anti-oxidation role. The single crystal furnace still has the problem of too long cooling time of the single crystal furnace table. The specific reason is that the single crystal furnace table is provided with components such as the graphite crucible, and the heat of components such as the graphite crucible is quite large. Since a large amount of heat is concentrated in the single crystal furnace table area, it is difficult for the traditional crucible support assembly to accelerate the cooling speed of the single crystal furnace table. The first channel, the second channel, the third channel and the fourth channel are arranged on the crucible support assembly, and argon gas is continuously introduced into the single crystal furnace, which not only prevents oxidation, but also quickly cools the graphite crucible and the components around the graphite crucible, assists in quickly cooling the graphite crucible and the components around the graphite crucible, accelerates the cooling speed of the single crystal furnace, greatly reduces the shutdown time of the single crystal furnace, and effectively improves the crystal pulling efficiency and unit output.

[0041] The embodiment of the present application provides a crucible support assembly, comprising: a crucible support body, the crucible support body being located on the top of a support rod, the support rod being provided with a first channel and a second channel which are not connected to each other;

[0042] Wherein, a third channel communicating with the first channel is provided in the crucible support body, and a fourth channel communicating with the second channel is also provided in the crucible support body; the third channel and the fourth channel are not communicated with each other;

[0043] The first channel, the second channel, the third channel, and the fourth channel are all connected to the single crystal furnace;

[0044] The third channel is a spiral channel; and / or

[0045] The fourth channel is a spiral channel.

[0046] In the embodiments of the present application, the structure and connection method of the support rod and the crucible support body are consistent with those of the traditional support rod and crucible support. The difference is that the present application solution adds a first channel, a second channel, a third channel, and a fourth channel to the original structure of the support rod and the crucible support body. The shapes of the first channel, the second channel, the third channel, and the fourth channel can be set according to the preparation process and actual needs. The shapes of these four channels can be tubular, U-shaped, serpentine, and other regular or irregular shapes. The purpose of providing a spiral channel in these four channels is to facilitate the cooling gas to carry away more heat, which helps to improve the cooling efficiency. The first channel and the second channel can be set along the length of the support rod or along a specific direction and position of the support rod, so as not to affect the mechanical properties of the support rod; the third channel and the fourth channel can be set along the circumference of the crucible support body or along a specific direction and position of the crucible support body, so as not to affect the mechanical properties of the support rod. In addition, the crucible support assembly composed of the support rod and the crucible support body is used to support the graphite crucible, so the structure of the support rod and the crucible support body can also be different from that of the traditional support rod and the crucible support, as long as it can effectively support the graphite crucible.

[0047] In an embodiment of the present application, a first channel, a second channel, a third channel, and a fourth channel are provided on the crucible support assembly to form two cooling channels that are not connected to each other. After the single crystal furnace is shut down, cooling gas (argon) is continuously introduced into the single crystal furnace. The cooling gas (argon) flows in the two cooling channels that are not connected to each other, taking away a large amount of heat, thereby enabling rapid cooling of the single crystal furnace platform so that the furnace can be dismantled in advance. Lowering the furnace chamber temperature before dismantling the single crystal furnace can avoid oxidation of graphite parts and spontaneous combustion and pulverization of thermal field felt caused by external cold stress due to the thermal field in the furnace chamber after dismantling. The purpose of rapid cooling of the furnace platform is achieved by modifying the crucible support assembly, which has no impact on the crystal pulling process and the normal operation of the equipment. The shutdown time is expected to be saved by 2-4 hours. It has the advantages of simple structure, reasonable design, and can greatly improve the crystal pulling efficiency. It should be noted that, in the traditional scheme, the purpose of continuously introducing argon into the single crystal furnace after the furnace is stopped is to prevent oxidation; in the present application, the effect of continuously introducing gas into the single crystal furnace is to prevent oxidation and cool down. Therefore, after the furnace is stopped, the gas selected to be introduced can be argon, or other gases other than argon that can prevent oxidation and cool down.

[0048] In the embodiment of the present application, the first channel and the third channel together constitute a first cooling channel, and the second channel and the fourth channel together constitute a second cooling channel, that is, two cooling channels that are not connected to each other are provided. Compared with only one cooling channel, the cooling gas can take away more heat, which helps to improve the cooling efficiency, and will not affect the bearing capacity and other mechanical properties of the crucible support assembly, and is highly practical; the third channel is a spiral channel; and / or the fourth channel is a spiral channel. When a spiral channel is provided, the cooling gas has a longer travel distance and a larger contact area with the object to be cooled. The cooling gas can take away more heat, which helps to improve the cooling efficiency.

[0049] In an optional embodiment, the first channel is tubular, and the diameter of the first channel is 8-12 mm (eg, 8 mm, 9 mm, 10 mm, 11 mm, 12 mm); and / or

[0050] The second channel is tubular, and the diameter of the second channel is 8-12 mm (eg, 8 mm, 9 mm, 10 mm, 11 mm, 12 mm); and / or

[0051] The third channel is tubular, and the diameter of the third channel is 8-12 mm (eg, 8 mm, 9 mm, 10 mm, 11 mm, 12 mm); and / or

[0052] The fourth channel is tubular, and a diameter of the fourth channel is 8-12 mm (eg, 8 mm, 9 mm, 10 mm, 11 mm, 12 mm).

[0053] In the embodiments of the present application, the first channel, the second channel, the third channel, and the fourth channel are all tubular structures. The tubular structure can increase the contact area between the cooling gas and the cavity wall, thereby more effectively transferring heat and improving the heat exchange efficiency. Controlling the diameter of each channel not only improves the cooling efficiency but also ensures the bearing capacity and other mechanical properties of the crucible support assembly. In addition, it should be noted that the third channel being tubular specifically means that the third channel is a tubular channel or a spiral pipe; similarly, the fourth channel being tubular specifically means that the fourth channel is a tubular channel or a spiral pipe.

[0054] In an optional embodiment, the diameter of the first channel is smaller than the diameter of the third channel; and the diameter of the second channel is smaller than the diameter of the fourth channel.

[0055] In the embodiment of the present application, taking into comprehensive consideration the stress borne by the support rod and the stress borne by the crucible support, the relatively low diameters of the first channel and the second channel can better ensure the bearing capacity and other mechanical properties of the crucible support assembly; there is a certain difference in diameter between the first channel and the third channel, and there is a certain difference in diameter between the second channel and the fourth channel, which helps to optimize the gas flow path and improve the cooling efficiency.

[0056] In an optional embodiment, the number of turns of the third channel around the crucible support body is recorded as N, the number of turns of the fourth channel around the crucible support body is recorded as N', and the difference between N and N' is 1.5-2.5.

[0057] In the embodiment of the present application, the first channel and the third channel together constitute a first cooling channel, and the second channel and the fourth channel together constitute a second cooling channel; the purpose of controlling the difference between N and N' is to create a temperature difference between the temperature of the cooling gas flowing out of the first cooling channel and the temperature of the cooling gas flowing out of the second cooling channel. The existence of a temperature difference means convection, which accelerates heat exchange and further accelerates the cooling speed of the single crystal furnace.

[0058] In an optional embodiment, one end of the third channel away from the first channel is arranged on one side of the crucible holder body, and one end of the fourth channel away from the second channel is arranged on the other side of the crucible holder body; and / or

[0059] One end of the first channel away from the third channel is arranged on one side of the support rod, and one end of the second channel away from the fourth channel is arranged on the other side of the support rod.

[0060] In the embodiment of the present application, there is a temperature difference between the temperature of the cooling gas flowing out of the first cooling channel and the temperature of the cooling gas flowing out of the second cooling channel. When there is a temperature difference, there is convection. The outlets of the cooling gas are relatively arranged, and the convection effect is more obvious, which serves to further accelerate the heat exchange, and then further accelerate the cooling speed of the single crystal furnace. Specifically, if the cooling gas enters from the top of the single crystal furnace and then flows out from the bottom of the single crystal furnace, then the bottom end of the first channel can be set on the left side of the support rod, and the bottom end of the second channel can be set on the right side of the support rod. At this time, there is a temperature difference between the bottom end of the first channel and the bottom end of the second channel, and the convection effect is more obvious. If the cooling gas enters from the bottom of the single crystal furnace and flows out from the top of the single crystal furnace, the top end of the third channel can be set on the left side of the crucible support body, and the top end of the fourth channel can be set on the right side of the crucible support body. At this time, there is a temperature difference between the top end of the third channel and the top end of the fourth channel, and the convection effect is more obvious; in addition, for the single crystal furnace structure in which the cooling gas can enter from the top and the bottom of the single crystal furnace; the top end outlets of the first cooling channel and the second cooling channel are relatively set (such as one outlet is located on the left and the corresponding other outlet is located on the right), and the bottom end outlets of the first cooling channel and the second cooling channel are also relatively set (such as one outlet is located on the left and the corresponding other outlet is located on the right).

[0061] In an optional embodiment, the third channel wraps around the crucible support body 1-2 times, and the fourth channel wraps around the crucible support body 2.5-4.5 times. In the embodiment of the present application, the number of wraps of the third channel and the fourth channel is reasonably set to ensure the mechanical properties of the crucible support body and further accelerate the cooling speed of the single crystal furnace.

[0062] In an optional embodiment, the third channel includes an air inlet channel II and an annular channel III; an air inlet I is provided at one end of the air inlet channel II, and the other end of the air inlet channel II is connected to the annular channel III, and an air outlet IV is provided on the annular channel III;

[0063] The fourth channel includes an intake channel b, an annular channel c, an intake channel d, an annular channel e, an intake channel f, and an annular channel g, which are sequentially connected; an intake port a is provided at one end of the intake channel b, and the other end of the intake channel b is connected to the annular channel c; the annular channel c and the annular channel e are connected via the intake channel d, and the annular channel e and the annular channel g are connected via the intake channel f; and the annular channel g is provided with an outlet h;

[0064] Wherein, the first channel is connected to the third channel through the air inlet I, and the air outlet IV is connected to the single crystal furnace;

[0065] The second channel is connected to the fourth channel through the air inlet a, and the air outlet h is connected to the single crystal furnace.

[0066] In the embodiment of the present application, the third channel is wound around the crucible support body once, and the fourth channel is wound around the crucible support body three times, which can ensure the mechanical properties of the crucible support body and further accelerate the cooling speed of the single crystal furnace.

[0067] In an optional embodiment, the diameter of the third channel is greater than the diameter of the fourth channel. In the embodiment of the present application, the diameter of the third channel is greater than the fourth channel to achieve a greater temperature difference between the temperature of the cooling gas flowing out of the first cooling channel and the temperature of the cooling gas flowing out of the second cooling channel, making the convection phenomenon more obvious, thereby accelerating heat exchange and further accelerating the cooling speed of the single crystal furnace.

[0068] In an optional embodiment, the top end of the first channel is connected to the third channel through a first curved air inlet channel; a first ZrC-SiC ceramic coating having a thickness of 100 to 200 μm (e.g., 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, or 200 μm) is provided on an inner sidewall of the first curved air inlet channel;

[0069] The top of the second channel is connected to the fourth channel through a second curved air inlet channel, and a second ZrC-SiC ceramic coating with a thickness of 100~200μm (for example, 100μm, 120μm, 140μm, 160μm, 180μm, 200μm) is provided on the inner side wall of the second curved air inlet channel.

[0070] In the embodiment of the present application, the first and third channels are connected by a first curved air inlet channel, which can reduce the impact of cooling gas on the air channel walls, thereby reducing the possibility of relative positional shift between the support rod and the crucible support body. Providing a first ZrC-SiC ceramic coating can reduce the wear rate of the first curved air inlet channel and increase the operational stability of the crucible support assembly. The second and fourth channels are connected by a second curved air inlet channel, which can reduce the impact of cooling gas on the air channel walls, thereby reducing the possibility of relative positional shift between the support rod and the crucible support body. Providing a second ZrC-SiC ceramic coating can reduce the wear rate of the second curved air inlet channel and increase the operational stability of the crucible support assembly.

[0071] The following specific examples further illustrate the present invention, but should not be construed as limiting the present invention. Modifications or substitutions made to the methods, steps, or conditions of the present invention without departing from the spirit and substance of the present invention are within the scope of the present invention. Specific embodiments

[0073] Example 1

[0074] A single crystal furnace includes a crucible support assembly. Figure 1 As shown, the crucible support assembly includes a crucible support body 2, and the crucible support body 2 is located on the top of the support rod 1;

[0075] The support rod 1 is provided with a first channel 11 and a second channel 12 which are not connected to each other; the bottom end of the first channel 11 is provided on the left side of the support rod 1, and the bottom end of the second channel 12 is provided on the right side of the support rod 1;

[0076] The crucible holder body 2 is provided with a third channel 21 communicating with the first channel 11, and the crucible holder body 2 is further provided with a fourth channel 22 communicating with the second channel 12; the third channel 21 and the fourth channel 22 are not connected to each other; more specifically, the top end of the first channel 11 is connected to the third channel 21 via a first arc-shaped air inlet channel 13; a first ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the first arc-shaped air inlet channel 13; the top end of the second channel 12 is connected to the fourth channel 22 via a second arc-shaped air inlet channel 14; a second ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the second arc-shaped air inlet channel 14;

[0077] The first channel 11, the second channel 12, the third channel 21, and the fourth channel 22 are all connected to the single crystal furnace; more specifically, the bottom end of the first channel 11 is connected to the single crystal furnace, the bottom end of the second channel 12 is connected to the single crystal furnace, the top end of the third channel 21 is connected to the single crystal furnace, and the top end of the fourth channel 22 is connected to the single crystal furnace;

[0078] The third channel 21 is a spiral channel; the third channel circles around the crucible body once;

[0079] The fourth channel 22 is a spiral channel; the fourth channel is wound around the crucible body 2.5 times; the top of the third channel 21 is arranged on the left side of the crucible body 2, and the top of the fourth channel 22 is arranged on the left side of the crucible body 2;

[0080] The first channel 11 is tubular and has a diameter of 10 mm.

[0081] The second channel 12 is tubular, and the diameter of the second channel is 10 mm;

[0082] The third channel 21 is tubular, and the diameter of the third channel is 10 mm;

[0083] The fourth channel 22 is tubular, and the diameter of the fourth channel is 10 mm.

[0084] The single crystal furnace is operated as follows: Argon is introduced from below the furnace as a shielding and cooling gas, starting with shutdown. The argon flow rate remains the same as during the original shutdown process. This rapidly cools the graphite crucible and surrounding components through the crucible support assembly, accelerating the cooling of the single crystal furnace table and dissipating heat until the furnace temperature drops below the dismantling temperature. Argon flow route one: argon flows sequentially through the first channel 11, the first curved inlet channel 13, and the third channel 21. Argon flow route two: argon flows sequentially through the second channel 12, the second curved inlet channel 14, and the fourth channel 22.

[0085] Example 2

[0086] A single crystal furnace includes a crucible support assembly. Figure 1 As shown, the crucible support assembly includes a crucible support body 2, and the crucible support body 2 is located on the top of the support rod 1;

[0087] The support rod 1 is provided with a first channel 11 and a second channel 12 which are not connected to each other; the bottom end of the first channel 11 is provided on the left side of the support rod 1, and the bottom end of the second channel 12 is provided on the right side of the support rod 1;

[0088] The crucible holder body 2 is provided with a third channel 21 communicating with the first channel 11, and the crucible holder body 2 is further provided with a fourth channel 22 communicating with the second channel 12; the third channel 21 and the fourth channel 22 are not connected to each other; more specifically, the top end of the first channel 11 is connected to the third channel 21 via a first arc-shaped air inlet channel 13; a first ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the first arc-shaped air inlet channel 13; the top end of the second channel 12 is connected to the fourth channel 22 via a second arc-shaped air inlet channel 14; a second ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the second arc-shaped air inlet channel 14;

[0089] The first channel 11, the second channel 12, the third channel 21, and the fourth channel 22 are all connected to the single crystal furnace; more specifically, the bottom end of the first channel 11 is connected to the single crystal furnace, the bottom end of the second channel 12 is connected to the single crystal furnace, the top end of the third channel 21 is connected to the single crystal furnace, and the top end of the fourth channel 22 is connected to the single crystal furnace;

[0090] The third channel 21 is a spiral channel; the third channel wraps around the crucible body twice;

[0091] The fourth channel 22 is a spiral channel; the fourth channel is wound around the crucible body 4.5 times; the top of the third channel 21 is arranged on the left side of the crucible body 2, and the top of the fourth channel 22 is arranged on the left side of the crucible body 2;

[0092] The first channel 11 is tubular and has a diameter of 12 mm.

[0093] The second channel 12 is tubular, and the diameter of the second channel is 12 mm;

[0094] The third channel 21 is tubular, and the diameter of the third channel is 12 mm;

[0095] The fourth channel 22 is tubular, and the diameter of the fourth channel is 12 mm.

[0096] The single crystal furnace is used as follows: from the moment the furnace is shut down, argon is introduced from the bottom of the furnace as a shielding gas and cooling gas. The argon flow rate is maintained at the same rate as during the original shutdown process. The crucible and surrounding components are rapidly cooled through the crucible support assembly, accelerating the cooling rate of the single crystal furnace table. The heat from the thermal field is then removed until the temperature inside the furnace drops below the dismantling temperature. Argon flow route 1 is: Argon flows sequentially through the first channel 11, the first curved inlet channel 13, and the third channel 21.

[0097] The second argon gas flow route is: the argon gas flows through the second channel 12 , the second arc-shaped air inlet channel 14 , and the fourth channel 22 in sequence.

[0098] Example 3

[0099] A single crystal furnace includes a crucible support assembly. Figure 1 As shown, the crucible support assembly includes a crucible support body 2, and the crucible support body 2 is located on the top of the support rod 1;

[0100] The support rod 1 is provided with a first channel 11 and a second channel 12 which are not connected to each other; the bottom end of the first channel 11 is provided on the left side of the support rod 1, and the bottom end of the second channel 12 is provided on the right side of the support rod 1;

[0101] The crucible holder body 2 is provided with a third channel 21 communicating with the first channel 11, and the crucible holder body 2 is further provided with a fourth channel 22 communicating with the second channel 12; the third channel 21 and the fourth channel 22 are not connected to each other; more specifically, the top end of the first channel 11 is connected to the third channel 21 via a first arc-shaped air inlet channel 13; a first ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the first arc-shaped air inlet channel 13; the top end of the second channel 12 is connected to the fourth channel 22 via a second arc-shaped air inlet channel 14; a second ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the second arc-shaped air inlet channel 14;

[0102] The first channel 11, the second channel 12, the third channel 21, and the fourth channel 22 are all connected to the single crystal furnace; more specifically, the bottom end of the first channel 11 is connected to the single crystal furnace, the bottom end of the second channel 12 is connected to the single crystal furnace, the top end of the third channel 21 is connected to the single crystal furnace, and the top end of the fourth channel 22 is connected to the single crystal furnace;

[0103] The third channel 21 is a spiral channel; the third channel wraps around the crucible body twice;

[0104] The fourth channel 22 is a spiral channel; the fourth channel is wound around the crucible body 4.5 times; the top of the third channel 21 is arranged on the left side of the crucible body 2, and the top of the fourth channel 22 is arranged on the right side of the crucible body 2;

[0105] The first channel 11 is tubular and has a diameter of 12 mm.

[0106] The second channel 12 is tubular, and the diameter of the second channel is 12 mm;

[0107] The third channel 21 is tubular, and the diameter of the third channel is 12 mm;

[0108] The fourth channel 22 is tubular, and the diameter of the fourth channel is 12 mm.

[0109] The single crystal furnace is used as follows: from the moment the furnace is shut down, argon is introduced from the bottom of the furnace as a shielding gas and cooling gas. The argon flow rate is maintained at the same rate as during the original shutdown process. The crucible and surrounding components are rapidly cooled through the crucible support assembly, accelerating the cooling rate of the single crystal furnace table. The heat from the thermal field is then removed until the temperature inside the furnace drops below the dismantling temperature. Argon flow route 1 is: Argon flows sequentially through the first channel 11, the first curved inlet channel 13, and the third channel 21.

[0110] The second argon gas flow route is: the argon gas flows through the second channel 12 , the second arc-shaped air inlet channel 14 , and the fourth channel 22 in sequence.

[0111] Example 4

[0112] A single crystal furnace includes a crucible support assembly. Figure 1 As shown, the crucible support assembly includes a crucible support body 2, and the crucible support body 2 is located on the top of the support rod 1;

[0113] The support rod 1 is provided with a first channel 11 and a second channel 12 which are not connected to each other; the bottom end of the first channel 11 is provided on the left side of the support rod 1, and the bottom end of the second channel 12 is provided on the right side of the support rod 1;

[0114] The crucible holder body 2 is provided with a third channel 21 communicating with the first channel 11, and the crucible holder body 2 is further provided with a fourth channel 22 communicating with the second channel 12; the third channel 21 and the fourth channel 22 are not connected to each other; more specifically, the top end of the first channel 11 is connected to the third channel 21 via a first arc-shaped air inlet channel 13; a first ZrC-SiC ceramic coating with a thickness of 200 μm is provided on the inner sidewall of the first arc-shaped air inlet channel 13; the top end of the second channel 12 is connected to the fourth channel 22 via a second arc-shaped air inlet channel 14; a second ZrC-SiC ceramic coating with a thickness of 200 μm is provided on the inner sidewall of the second arc-shaped air inlet channel 14;

[0115] The first channel 11, the second channel 12, the third channel 21, and the fourth channel 22 are all connected to the single crystal furnace; more specifically, the bottom end of the first channel 11 is connected to the single crystal furnace, the bottom end of the second channel 12 is connected to the single crystal furnace, the top end of the third channel 21 is connected to the single crystal furnace, and the top end of the fourth channel 22 is connected to the single crystal furnace;

[0116] The third channel 21 is a spiral channel; the third channel circles around the crucible body once;

[0117] The fourth channel 22 is a spiral channel; the fourth channel surrounds the crucible support body three times; the top of the third channel 21 is arranged on the left side of the crucible support body 2, and the top of the fourth channel 22 is arranged on the right side of the crucible support body 2;

[0118] The first channel 11 is tubular and has a diameter of 8 mm.

[0119] The second channel 12 is tubular, and the diameter of the second channel is 8 mm;

[0120] The third channel 21 is tubular, and the diameter of the third channel is 8 mm; Figure 2 As shown, the third channel 21 includes an air inlet channel II and an annular channel III; an air inlet I is provided at one end of the air inlet channel II, and the other end of the air inlet channel II is connected to the annular channel III, and an air outlet IV is provided on the annular channel III; the first channel 11 is connected to the third channel 21 through the air inlet I, and the air outlet IV is connected to the single crystal furnace;

[0121] The fourth channel 22 is tubular, and the diameter of the fourth channel is 8 mm; Figure 3 As shown, the fourth channel 22 includes an air inlet channel b, an annular channel c, an air inlet channel d, an annular channel e, an air inlet channel f, and an annular channel g that are connected in sequence; an air inlet a is provided at one end of the air inlet channel b, and the other end of the air inlet channel b is connected to the annular channel c; the annular channel c and the annular channel e are connected through the air inlet channel d, and the annular channel e and the annular channel g are connected through the air inlet channel f, and the annular channel g is provided with an air outlet h; the second channel 12 is connected to the fourth channel 22 through the air inlet a, and the air outlet h is connected to the single crystal furnace.

[0122] The method of using a single crystal furnace is as follows: from the moment the furnace is shut down, argon is introduced from the bottom of the single crystal furnace as a protective gas and cooling gas. The argon flow rate is maintained the same as the original shutdown process of the single crystal furnace. The crucible and the components surrounding the graphite crucible are quickly cooled through the crucible support assembly, accelerating the cooling speed of the single crystal furnace table. The heat from the thermal field is then removed until the temperature inside the furnace drops below the dismantling temperature. The first argon flow route is: the argon flows through the first channel 11, the first curved air inlet channel 13, and the third channel 21 in sequence; wherein, the argon flow route in the third channel 21 is: flowing in from the air inlet I, flowing through the air inlet channel II, the annular channel III in sequence, and finally flowing out from the air outlet IV;

[0123] Argon gas flow route two: Argon gas flows sequentially through second channel 12, second arc-shaped inlet channel 14, and fourth channel 22. Within fourth channel 22, the argon gas flows from inlet port a, sequentially through inlet channel b, annular channel c, inlet channel d, annular channel e, inlet channel f, and annular channel g, ultimately exiting through outlet port h. Specifically, outlet port IV is located on the left side of the crucible holder body 2, while outlet port h is located on the right side.

[0124] Example 5

[0125] A single crystal furnace includes a crucible support assembly. Figure 1 As shown, the crucible support assembly includes a crucible support body 2, and the crucible support body 2 is located on the top of the support rod 1;

[0126] The support rod 1 is provided with a first channel 11 and a second channel 12 which are not connected to each other; the bottom end of the first channel 11 is provided on the left side of the support rod 1, and the bottom end of the second channel 12 is provided on the right side of the support rod 1;

[0127] The crucible holder body 2 is provided with a third channel 21 communicating with the first channel 11, and the crucible holder body 2 is further provided with a fourth channel 22 communicating with the second channel 12; the third channel 21 and the fourth channel 22 are not connected to each other; more specifically, the top end of the first channel 11 is connected to the third channel 21 via a first arc-shaped air inlet channel 13; a first ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the first arc-shaped air inlet channel 13; the top end of the second channel 12 is connected to the fourth channel 22 via a second arc-shaped air inlet channel 14; a second ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the second arc-shaped air inlet channel 14;

[0128] The first channel 11, the second channel 12, the third channel 21, and the fourth channel 22 are all connected to the single crystal furnace; more specifically, the bottom end of the first channel 11 is connected to the single crystal furnace, the bottom end of the second channel 12 is connected to the single crystal furnace, the top end of the third channel 21 is connected to the single crystal furnace, and the top end of the fourth channel 22 is connected to the single crystal furnace;

[0129] The third channel 21 is a spiral channel; the third channel circles around the crucible body once;

[0130] The fourth channel 22 is a spiral channel; the fourth channel surrounds the crucible support body three times; the top of the third channel 21 is arranged on the left side of the crucible support body 2, and the top of the fourth channel 22 is arranged on the right side of the crucible support body 2;

[0131] The first channel 11 is tubular and has a diameter of 12 mm.

[0132] The second channel 12 is tubular, and the diameter of the second channel is 12 mm;

[0133] The third channel 21 is tubular, and the diameter of the third channel is 12 mm; Figure 2 As shown, the third channel 21 includes an air inlet channel II and an annular channel III; an air inlet I is provided at one end of the air inlet channel II, and the other end of the air inlet channel II is connected to the annular channel III, and an air outlet IV is provided on the annular channel III; the first channel 11 is connected to the third channel 21 through the air inlet I, and the air outlet IV is connected to the single crystal furnace;

[0134] The fourth channel 22 is tubular, and the diameter of the fourth channel is 12 mm; Figure 3 As shown, the fourth channel 22 includes an air inlet channel b, an annular channel c, an air inlet channel d, an annular channel e, an air inlet channel f, and an annular channel g that are connected in sequence; an air inlet a is provided at one end of the air inlet channel b, and the other end of the air inlet channel b is connected to the annular channel c; the annular channel c and the annular channel e are connected through the air inlet channel d, and the annular channel e and the annular channel g are connected through the air inlet channel f, and the annular channel g is provided with an air outlet h; the second channel 12 is connected to the fourth channel 22 through the air inlet a, and the air outlet h is connected to the single crystal furnace.

[0135] The method of using a single crystal furnace is as follows: from the moment the furnace is shut down, argon is introduced from the bottom of the single crystal furnace as a protective gas and cooling gas. The argon flow rate is maintained the same as the original shutdown process of the single crystal furnace. The crucible and the components surrounding the graphite crucible are quickly cooled through the crucible support assembly, accelerating the cooling speed of the single crystal furnace table. The heat from the thermal field is then removed until the temperature inside the furnace drops below the dismantling temperature. The first argon flow route is: the argon flows through the first channel 11, the first curved air inlet channel 13, and the third channel 21 in sequence; wherein, the argon flow route in the third channel 21 is: flowing in from the air inlet I, flowing through the air inlet channel II, the annular channel III in sequence, and finally flowing out from the air outlet IV;

[0136] Argon gas flow route two: Argon gas flows sequentially through second channel 12, second arc-shaped inlet channel 14, and fourth channel 22. Within fourth channel 22, the argon gas flows from inlet port a, sequentially through inlet channel b, annular channel c, inlet channel d, annular channel e, inlet channel f, and annular channel g, ultimately exiting through outlet port h. Specifically, outlet port IV is located on the left side of the crucible holder body 2, while outlet port h is located on the right side.

[0137] Example 6

[0138] A single crystal furnace includes a crucible support assembly. Figure 1As shown, the crucible support assembly includes a crucible support body 2, and the crucible support body 2 is located on the top of the support rod 1;

[0139] The support rod 1 is provided with a first channel 11 and a second channel 12 which are not connected to each other; the bottom end of the first channel 11 is provided on the left side of the support rod 1, and the bottom end of the second channel 12 is provided on the right side of the support rod 1;

[0140] The crucible holder body 2 is provided with a third channel 21 communicating with the first channel 11, and the crucible holder body 2 is further provided with a fourth channel 22 communicating with the second channel 12; the third channel 21 and the fourth channel 22 are not connected to each other; more specifically, the top end of the first channel 11 is connected to the third channel 21 via a first arc-shaped air inlet channel 13; a first ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the first arc-shaped air inlet channel 13; the top end of the second channel 12 is connected to the fourth channel 22 via a second arc-shaped air inlet channel 14; a second ZrC-SiC ceramic coating with a thickness of 100 μm is provided on the inner sidewall of the second arc-shaped air inlet channel 14;

[0141] The first channel 11, the second channel 12, the third channel 21, and the fourth channel 22 are all connected to the single crystal furnace; more specifically, the bottom end of the first channel 11 is connected to the single crystal furnace, the bottom end of the second channel 12 is connected to the single crystal furnace, the top end of the third channel 21 is connected to the single crystal furnace, and the top end of the fourth channel 22 is connected to the single crystal furnace;

[0142] The third channel 21 is a spiral channel; the third channel circles around the crucible body once;

[0143] The fourth channel 22 is a spiral channel; the fourth channel surrounds the crucible support body three times; the top of the third channel 21 is arranged on the left side of the crucible support body 2, and the top of the fourth channel 22 is arranged on the right side of the crucible support body 2;

[0144] The first channel 11 is tubular and has a diameter of 12 mm.

[0145] The second channel 12 is tubular, and the diameter of the second channel is 12 mm;

[0146] The third channel 21 is tubular, and the diameter of the third channel is 12 mm; Figure 2 As shown, the third channel 21 includes an air inlet channel II and an annular channel III; an air inlet I is provided at one end of the air inlet channel II, and the other end of the air inlet channel II is connected to the annular channel III, and an air outlet IV is provided on the annular channel III; the first channel 11 is connected to the third channel 21 through the air inlet I, and the air outlet IV is connected to the single crystal furnace;

[0147] The fourth channel 22 is tubular, and the diameter of the fourth channel is 8 mm; Figure 3 As shown, the fourth channel 22 includes an air inlet channel b, an annular channel c, an air inlet channel d, an annular channel e, an air inlet channel f, and an annular channel g that are connected in sequence; an air inlet a is provided at one end of the air inlet channel b, and the other end of the air inlet channel b is connected to the annular channel c; the annular channel c and the annular channel e are connected through the air inlet channel d, and the annular channel e and the annular channel g are connected through the air inlet channel f, and the annular channel g is provided with an air outlet h; the second channel 12 is connected to the fourth channel 22 through the air inlet a, and the air outlet h is connected to the single crystal furnace.

[0148] The method of using a single crystal furnace is as follows: from the moment the furnace is shut down, argon is introduced from the bottom of the single crystal furnace as a protective gas and cooling gas. The argon flow rate is maintained the same as the original shutdown process of the single crystal furnace. The crucible and the components surrounding the graphite crucible are quickly cooled through the crucible support assembly, accelerating the cooling speed of the single crystal furnace table. The heat from the thermal field is then removed until the temperature inside the furnace drops below the dismantling temperature. The first argon flow route is: the argon flows through the first channel 11, the first curved air inlet channel 13, and the third channel 21 in sequence; wherein, the argon flow route in the third channel 21 is: flowing in from the air inlet I, flowing through the air inlet channel II, the annular channel III in sequence, and finally flowing out from the air outlet IV;

[0149] Argon gas flow route two: Argon gas flows sequentially through second channel 12, second arc-shaped inlet channel 14, and fourth channel 22. Within fourth channel 22, the argon gas flows from inlet port a, sequentially through inlet channel b, annular channel c, inlet channel d, annular channel e, inlet channel f, and annular channel g, ultimately exiting through outlet port h. Specifically, outlet port IV is located on the left side of the crucible holder body 2, while outlet port h is located on the right side.

[0150] Comparative Example 1

[0151] A single crystal furnace includes a crucible support assembly. The crucible support assembly is a traditional crucible support assembly, that is, the crucible support assembly is not provided with a first channel 11, a second channel 12, a third channel 21, and a fourth channel 22.

[0152] Compared with Comparative Example 1, the single crystal furnace downtime reduction data of Examples 1-5 is shown in Table 1 below.

[0153] Table 1

[0154]

[0155] Referring to the data of the above-mentioned Examples 2 and 3, it can be seen that there is a temperature difference between the temperature of the cooling gas flowing out of the first cooling channel and the temperature of the cooling gas flowing out of the second cooling channel. When there is a temperature difference, there is convection. The outlets of the cooling gas are arranged relative to each other, and the convection effect is more obvious, which further accelerates the heat exchange and further accelerates the cooling speed of the single crystal furnace.

[0156] With reference to the data of the above-mentioned embodiment 3 and embodiment 5, it can be known that by reasonably setting the number of turns of the third channel 21 and the fourth channel 22, the cooling speed of the single crystal furnace can be further accelerated.

[0157] Referring to the data of the above-mentioned Examples 5 and 6, it can be seen that the diameter of the third channel 21 is larger than that of the fourth channel 22, so that there is a greater temperature difference between the temperature of the cooling gas flowing out of the first cooling channel and the temperature of the cooling gas flowing out of the second cooling channel, and the convection phenomenon is more obvious, thereby accelerating the heat exchange and further accelerating the cooling speed of the single crystal furnace.

[0158] To sum up, the crucible support assembly is provided with a first channel 11, a second channel 12, a third channel 21, and a fourth channel 22. The first channel 11 and the third channel 21 together constitute a first cooling channel, and the second channel 12 and the fourth channel 22 together constitute a second cooling channel. After the single crystal furnace is stopped, argon gas can be introduced into the single crystal furnace. The argon gas flows through the first cooling channel and the second cooling channel respectively to quickly cool the graphite crucible, assisting the graphite crucible to cool down quickly, thereby accelerating the cooling speed of the single crystal furnace, greatly reducing the shutdown time of the single crystal furnace, and effectively improving the crystal pulling efficiency and unit yield.

[0159] The embodiment of the present application can provide a single crystal furnace, comprising a support rod and the above-mentioned crucible support assembly. The advantages of the above-mentioned crucible support assembly are also possessed by the single crystal furnace, which will not be described in detail here.

[0160] It should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are only for the convenience of describing the present application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present application. The directional terms "inside" and "outside" refer to the inside and outside relative to the outline of the component itself. For example, if the device in the drawing is inverted, the device described as "above other devices or structures" or "on top of other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here will be interpreted accordingly.

[0161] It should also be noted that references to "one embodiment," "another embodiment," "an embodiment," etc., in this application refer to specific features, structures, or characteristics described in conjunction with that embodiment as included in at least one embodiment generally described in this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in conjunction with any embodiment, it is intended that such feature, structure, or characteristic, when implemented in conjunction with other embodiments, also fall within the scope of this application.

[0162] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0163] It should also be noted that the above are only preferred embodiments of the present application and do not limit the scope of patent protection of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the scope of patent protection of the present application.

Claims

1. A crucible support assembly, characterized in that: include: A crucible support body, the crucible support body being located on the top of a support rod, and the support rod being provided with a first channel and a second channel which are not communicated with each other; Wherein, a third channel communicating with the first channel is provided in the crucible support body, and a fourth channel communicating with the second channel is also provided in the crucible support body; the third channel and the fourth channel are not communicated with each other; The first channel, the second channel, the third channel, and the fourth channel are all connected to the single crystal furnace; The third channel is a spiral channel; and / or The fourth channel is a spiral channel.

2. The crucible support assembly according to claim 1, wherein: The first channel is tubular, and the diameter of the first channel is 8-12 mm; and / or The second channel is tubular, and the diameter of the second channel is 8-12 mm; and / or The third channel is tubular, and the diameter of the third channel is 8-12 mm; and / or The fourth channel is tubular, and the diameter of the fourth channel is 8-12 mm.

3. The crucible support assembly according to claim 2, wherein: The diameter of the first channel is smaller than that of the third channel; and the diameter of the second channel is smaller than that of the fourth channel.

4. The crucible support assembly according to any one of claims 1 to 3, characterized in that: The number of turns of the third channel around the crucible support body is recorded as N, and the number of turns of the fourth channel around the crucible support body is recorded as N'. The difference between N and N' is 1.5-2.

5.

5. The crucible support assembly according to claim 4, wherein: One end of the third channel away from the first channel is arranged on one side of the crucible holder body, and one end of the fourth channel away from the second channel is arranged on the other side of the crucible holder body; and / or One end of the first channel away from the third channel is arranged on one side of the support rod, and one end of the second channel away from the fourth channel is arranged on the other side of the support rod.

6. The crucible support assembly according to claim 5, wherein: The third channel circles around the crucible support body 1 to 2 times, and the fourth channel circles around the crucible support body 2.5 to 4.5 times.

7. The crucible support assembly according to claim 6, wherein: The third channel includes an air inlet channel II and an annular channel III; an air inlet I is provided at one end of the air inlet channel II, and the other end of the air inlet channel II is connected to the annular channel III, and an air outlet IV is provided on the annular channel III; The fourth channel includes an intake channel b, an annular channel c, an intake channel d, an annular channel e, an intake channel f, and an annular channel g, which are sequentially connected; an intake port a is provided at one end of the intake channel b, and the other end of the intake channel b is connected to the annular channel c; the annular channel c and the annular channel e are connected via the intake channel d, and the annular channel e and the annular channel g are connected via the intake channel f; and the annular channel g is provided with an outlet h; Wherein, the first channel is connected to the third channel through the air inlet I, and the air outlet IV is connected to the single crystal furnace; The second channel is connected to the fourth channel through the air inlet a, and the air outlet h is connected to the single crystal furnace.

8. The crucible support assembly according to claim 6, wherein: A diameter of the third channel is greater than a diameter of the fourth channel.

9. The crucible support assembly according to claim 1, wherein: The top of the first channel is connected to the third channel through a first arc-shaped air inlet channel; a first ZrC-SiC ceramic coating with a thickness of 100-200 μm is provided on the inner side wall of the first arc-shaped air inlet channel; The top end of the second channel is connected to the fourth channel through a second arc-shaped air inlet channel, and a second ZrC-SiC ceramic coating with a thickness of 100-200 μm is provided on the inner side wall of the second arc-shaped air inlet channel.

10. A single crystal furnace, characterized in that: The invention comprises a supporting rod and a crucible support assembly according to any one of claims 1 to 9.

Images