Polishing mechanism and polishing module

Abstract

The embodiment of the utility model provides a polishing mechanism and a polishing module. The polishing mechanism comprises a supporting body, at least two long-strip-shaped through holes evenly distributed in the circumferential direction are formed in the supporting body, and the axis of each long-strip-shaped through hole penetrates through the center of the supporting body. The at least two polishing heads are movably arranged in the long-strip-shaped through holes in a one-to-one correspondence mode; the first driving mechanism is arranged on the supporting body, electrically connected with the polishing heads and used for driving the polishing heads to rotate and move in a reciprocating mode along the long-strip-shaped through holes at the same time. According to the polishing device, all the polishing heads reciprocate along the long-strip-shaped through holes, so that the polishing heads can reciprocate in the radial direction of the polishing pad in the polishing operation process, namely in the radial direction of the annular groove used for containing the polishing solution, all the polishing heads can make full contact with the polishing solution, and the more efficient polishing effect is achieved; especially for wafers made of third-generation semiconductor materials, the polishing efficiency is remarkably improved through the polishing mode.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of semiconductor processing technology, and in particular to a polishing mechanism and a polishing module. Background Art

[0002] In semiconductor processing, chemical mechanical polishing (CMP) is a key surface treatment process that combines chemical reactions and mechanical action to flatten wafer surfaces. During this process, the polishing slurry reacts with the material on the wafer surface, while the relative motion between the polishing pad and the wafer removes material.

[0003] Currently, for semiconductor materials with extremely high hardness and high polishing difficulty, such as third-generation semiconductor materials including silicon carbide, gallium nitride, diamond, zinc oxide, and aluminum nitride, existing polishing equipment cannot meet the polishing requirements of these materials, resulting in low polishing efficiency. In addition, the polishing quality is unstable, and the consistency of polished wafers is poor. Utility Model Content

[0004] In view of this, embodiments of the present application provide a polishing mechanism and a polishing module to at least partially solve the above-mentioned problems.

[0005] According to a first aspect of an embodiment of the present application, a polishing mechanism is provided for pressing a wafer against a polishing pad for polishing, comprising: a support body, having at least two elongated through holes uniformly distributed along the circumference, and the axis of each of the elongated through holes passes through the center of the support body; at least two polishing heads, one-to-one corresponding to and movably arranged in each of the elongated through holes; a first driving mechanism, mounted on the support body and connected to each of the polishing heads, for driving each of the polishing heads to rotate and simultaneously move back and forth along the elongated through holes.

[0006] Furthermore, in the above-mentioned polishing mechanism, each of the polishing heads maintains an equal distance from the center of the support body during the reciprocating movement along the elongated through hole.

[0007] Furthermore, in the above-mentioned polishing mechanism, the first driving mechanism includes: at least two motors, each of the motors is placed on the first side of the support body and the output shaft passes through the support body and is connected one-to-one with the rotating shaft of each polishing head placed on the second side of the support body, and each of the motors is used to drive each of the polishing heads to rotate; a driving unit, which is installed on the support body and connected to the outer casing of each of the motors, and is used to drive each of the motors to move back and forth along the elongated through hole, thereby driving the polishing head to move back and forth along the elongated through hole.

[0008] Furthermore, in the above-mentioned polishing mechanism, both ends of the elongated through hole are semicircular to match the output shaft of the motor and / or the rotating shaft of the polishing head.

[0009] Furthermore, the above-mentioned polishing mechanism further includes: a polishing liquid supply device, which is fixedly arranged in the central area of ​​the support body and is used to supply polishing liquid to the polishing pad.

[0010] Furthermore, in the above-mentioned polishing mechanism, the polishing liquid supply device includes: a circular polishing liquid tube, which is arranged in the central area of ​​the support body; at least two nozzles, each of which is connected to the outer side of the circular polishing liquid tube and is evenly distributed along the circumference, and the nozzles are arranged in a one-to-one correspondence with the areas between adjacent polishing heads, and each of the nozzles is arranged at a preset angle to the moving direction of the polishing head on the support body.

[0011] Furthermore, in the above-mentioned polishing mechanism, the preset angle is 15° to 45°.

[0012] Furthermore, in the above-mentioned polishing mechanism, the support body includes: a main body; at least two connectors, both connected to the main body and evenly distributed along the circumference of the main body, and each of the connectors is provided with one of the elongated through holes, and the axis of each of the elongated through holes passes through the center of the main body.

[0013] According to the second aspect of the embodiment of the present application, a polishing module is provided, comprising: a base, a polishing disc arranged on the base, a polishing pad arranged on the polishing disc, a second driving mechanism for controlling the rotation of the polishing disc, and any one of the above-mentioned polishing mechanisms; wherein, the polishing pad is formed with a plurality of annular grooves for accommodating polishing liquid that are concentric with the polishing pad on the surface facing the polishing mechanism, the polishing mechanism is placed above the polishing pad, and the support body of the polishing mechanism can be arranged coaxially with the polishing pad so that the axis of the elongated through hole on the support body is arranged along the radial direction of the annular groove, thereby enabling each of the polishing heads to move back and forth along the radial direction of the groove.

[0014] Furthermore, the above-mentioned polishing module also includes: a loading and unloading platform, which is arranged on the base and placed on one side of the polishing disk, and is used to carry wafers; a third driving mechanism, which is connected to the support body, and is used to drive the support body to move between the polishing pad and the loading and unloading platform to receive the wafers to be polished from the loading and unloading platform, or transfer the polished wafers to the loading and unloading platform; the third driving mechanism is also used to drive the support body to rotate, so that each of the polishing heads is placed above the loading and unloading platform in turn, and exchanges wafers with the loading and unloading platform.

[0015] In the embodiments of the present application, each polishing head reciprocates along the elongated through-holes, allowing the polishing head to reciprocate radially along the polishing pad, that is, along the radial direction of the annular groove for containing the polishing liquid, during the polishing operation. This allows each polishing head to fully contact the polishing liquid, thereby achieving a more efficient polishing effect. This polishing method significantly improves polishing efficiency, especially for third-generation semiconductor materials. Furthermore, since each polishing head moves radially along the annular groove, the polishing effect of each polishing head is stable, thereby ensuring that the wafers polished by each polishing head have good consistency, thereby improving the quality of the wafers.

[0016] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other objects, features and advantages of the present application will become more apparent by describing in more detail exemplary embodiments of the present application in conjunction with the accompanying drawings, wherein the same reference numerals generally represent the same components in the exemplary embodiments of the present application.

[0018] Figure 1 A schematic diagram of the three-dimensional structure of the polishing mechanism provided in an embodiment of the present application;

[0019] Figure 2 A schematic diagram of the planar structure of the polishing mechanism provided in an embodiment of the present application;

[0020] Figure 3 A schematic structural diagram of a polishing liquid supply device in a polishing mechanism provided in an embodiment of the present application;

[0021] Figure 4 A schematic diagram of the three-dimensional structure of the polishing module provided in an embodiment of the present application;

[0022] Figure 5 Another schematic diagram of the three-dimensional structure of the polishing module provided in an embodiment of the present application;

[0023] Figure 6 A schematic structural diagram of the polishing pad and polishing head in the polishing module provided in an embodiment of the present application;

[0024] Figure 7 A schematic diagram of the planar structure of the polishing module provided in an embodiment of the present application;

[0025] Figure 8 A schematic diagram of the polishing mechanism of the polishing module provided in an embodiment of the present application being moved to the loading and unloading platform;

[0026] In the above picture:

[0027] Polishing mechanism 100; support body 110; long strip through hole 111; body 112; connector 113; polishing head 120; first drive mechanism 130; motor 131; polishing liquid supply device 140; annular polishing liquid pipe 141; nozzle 142; base 200; polishing disc 300; polishing pad 400; dresser 500; loading and unloading platform 600. DETAILED DESCRIPTION

[0028] The preferred embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although the preferred embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments described herein. Instead, these embodiments are provided to make the present application more thorough and complete, and to fully convey the scope of the present application to those skilled in the art.

[0029] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. As used in this application and the appended claims, the singular forms "a," "an," "the," and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0030] It should be understood that although the terms "first", "second", "third", etc. may be used in this application to describe various components, these components should not be limited to these terms. These terms are only used to distinguish components of the same type from each other. For example, without departing from the scope of this application, the first component may also be referred to as the second component, and similarly, the second component may also be referred to as the first component. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "plurality" means two or more, unless otherwise clearly and specifically defined.

[0031] In the description of this application, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0032] Unless otherwise expressly specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be interpreted broadly. For example, they may refer to fixed or detachable connections, or integration; mechanical or electrical connections; direct or indirect connections through an intermediary; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0033] Currently, semiconductor materials with a bandgap (Eg) greater than or equal to 2.3eV are referred to as wide-bandgap semiconductors, also known as third-generation semiconductor materials. Common third-generation semiconductor materials include silicon carbide, gallium nitride, diamond, zinc oxide, and aluminum nitride. Devices developed using third-generation semiconductor materials offer advantages such as high voltage and high temperature resistance, high power, radiation resistance, strong conductivity, high speed, and low operating losses, thus possessing enormous application potential.

[0034] However, due to the extremely high hardness and difficulty in polishing third-generation semiconductor materials, the use of CMP equipment in related technologies to polish wafers made of third-generation semiconductor materials not only has low polishing efficiency but also poor consistency.

[0035] In response to the above problems, an embodiment of the present application provides a polishing mechanism that can improve polishing efficiency while having better consistency.

[0036] The technical solutions of the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0037] See also Figure 1 and Figure 2 According to one embodiment of the present application, a polishing mechanism 100 includes a support 110, at least two polishing heads 120, and a first drive mechanism 130. The polishing mechanism 100 is used to press a wafer against a polishing pad for polishing. During polishing, the polishing mechanism 100 is placed above the polishing pad, and the polishing heads 120 are loaded with wafers. The polishing heads 120 press the wafer against the polishing pad, and mechanically chemically polish the wafer through the combination of the polishing liquid on the polishing pad and the pressing force. The polishing heads 120 can secure the wafer by means of adsorption, clamping, or other methods.

[0038] In this embodiment, the support body 110 is provided with at least two elongated through holes 111 evenly distributed along the circumference, and the axis of each elongated through hole passes through the center of the support body 110. Each polishing head 120 is movably disposed in each elongated through hole 111 in a one-to-one correspondence. The first driving mechanism 130 is mounted on the support body 110 and connected to each polishing head 120, and is used to drive each polishing head 120 to rotate while also moving along the length direction of the elongated through hole 111 ( Figure 2The a direction, b direction, and c direction shown in the figure move back and forth.

[0039] In one specific implementation, the support body 110 may include a main body 112 and at least two connectors 113. The number of connectors 113 is equal to the number of polishing heads 120. Each connector 113 is connected to the main body 112 and evenly distributed along the circumference of the main body 112. Each connector 113 defines an elongated through hole 111. Each polishing head 120 is movably disposed within each elongated through hole 111 and can reciprocate along the length of the elongated through hole. The axis of each elongated through hole 111 passes through the center O of the main body 112.

[0040] For example, see Figure 2 , Figure 2 is a schematic diagram of the planar structure of the support body 110, Figure 2 The figure shows an example of three connectors 113, which are evenly distributed along the circumference of the body 112. The axes of the three long strip through holes 111 are AA', BB', and CC', and all three axes pass through the center O of the support body 110. The length directions of the three long strip through holes 111 are Figure 2 In the directions a, b and c shown, the three polishing heads 120 can be respectively moved along Figure 2 The surfaces of the three polishing heads 120 away from the support 110 should be in the same plane so that the three wafers carried by the three polishing heads 120 can fully contact the polishing pad.

[0041] During polishing, the polishing head 120 presses against the polishing pad, and the support body 110 is coaxially arranged with the polishing pad. Since the axes of the three elongated connecting holes 111 intersect at the center of the support body 110, when the support body 110 and the polishing pad are coaxial, the axes of the elongated through holes 111 are arranged along the radial direction of the polishing pad. Consequently, when the polishing head 120 reciprocates along the elongated through holes 111, it also reciprocates along the radial direction of the polishing pad. It will be understood that the surface of the polishing pad against which the polishing head 120 presses is formed with multiple annular grooves concentric with the polishing pad. These grooves can be used to contain polishing liquid. When the polishing head 120 moves along the radial direction of the polishing pad, it also reciprocates along the radial direction of the annular grooves.

[0042] In another specific implementation, the support body 110 may also be in a disc shape, and the elongated through holes 111 are evenly distributed along the circumference of the disc, and the axes of the elongated through holes 111 are arranged along the radial direction of the disc.

[0043] It should be noted that, in specific implementation, the support body 110 may also be in other shapes, as long as it can ensure that the polishing head 120 moves along the radial direction of the annular groove. This embodiment does not impose any limitation on the specific shape of the support body 110.

[0044] It should be noted that in an optional specific implementation, the number of connectors 113 and the number of elongated through holes 111 are the same, which can be two, four or more. Each connector 113 is provided with an elongated through hole 111, and this embodiment does not impose any limitation on the specific number.

[0045] In this embodiment, the polishing head 120 is driven to rotate by the first driving mechanism 130 , and simultaneously moves back and forth along the length direction of the long strip through hole 111 .

[0046] In the embodiment of the present application, each polishing head 120 can reciprocate along the elongated through hole 111, so that the polishing head 120 can reciprocate along the radial direction of the polishing pad, that is, along the radial direction of the annular groove for containing the polishing liquid during the polishing operation, so that each polishing head 120 can fully contact the polishing liquid, thereby achieving a more efficient polishing effect. Especially for third-generation semiconductor materials, this polishing method significantly improves the polishing efficiency. In addition, since each polishing head 120 moves along the radial direction of the annular groove, the wafer carried by each polishing head 120 is at the same angle as the polishing pad groove during the moving polishing, ensuring that the polishing effect of each polishing head 120 is stable, thereby ensuring that the wafers polished by each polishing head 120 have good consistency, thereby improving the overall quality of the wafer.

[0047] In some embodiments, each polishing head 120 maintains an equal distance from the center of the support body 110 during the reciprocating movement along the elongated through hole 111 .

[0048] In a specific implementation, the lengths of the elongated through holes 111 may be equal, and the first ends ( Figure 2 The distance from the second end of each long strip through hole 111 (the end close to the center of the support body shown in FIG) to the center of the support body 110 is equal. Of course, the second end of each long strip through hole 111 ( Figure 2 The distance from the end away from the center of the support body shown in FIG to the center of the support body can also be equal.

[0049] Before polishing begins, the distance between the position of each polishing head 120 in the long strip through hole 111 and the center of the support body 110 can be made equal, and then the polishing heads 120 can be controlled to move synchronously, for example, at the same speed, so as to keep the distance between each polishing head 120 and the center of the support body 110 equal throughout the entire movement process.

[0050] In this embodiment, each polishing head 120 always maintains an equal distance from the center of the support body 110 during reciprocating movement within the elongated through-hole 111. This movement method ensures that each polishing head 120 is always located on the same circumference with the center of the support body 110 as the center during movement, ensuring uniform mass distribution of the polishing mechanism 100, thereby suppressing vibration caused by uneven mass and ensuring the stability of the polishing mechanism 100 during the polishing process, thereby improving the quality and efficiency of the entire wafer polishing process. It also ensures that the wafers polished by each polishing head 120 have good consistency, preventing differences in film thickness among wafers loaded for polishing at the same time.

[0051] In some embodiments, see Figure 1 The first driving mechanism 130 includes: at least two motors 131 and a driving unit. The number of motors 131 is the same as the number of polishing heads 120, and each motor is placed on the first side of the support body 110 (for example Figure 1 The output shaft is provided through the support body 110 and is placed on the second side of the support body 110 (eg Figure 1 The rotating shafts of the polishing heads 120 (shown on the lower side) are connected one by one, and the motors 131 are respectively used to drive the polishing heads 120 to rotate.

[0052] The driving unit (not shown) is mounted on the support body 110 and connected to the housing of each motor 131 , and is used to drive each motor 131 to move back and forth along the elongated through hole 111 , thereby driving the polishing head 120 to move back and forth along the elongated through hole 111 .

[0053] In a specific implementation, the driving unit may also be an electric mechanism, a pneumatic mechanism, etc., the same number as the polishing heads 120. Each electric mechanism or pneumatic mechanism may be connected to the housing of the motor 131. The electric mechanism or pneumatic mechanism may drive the motor 131 to move back and forth along the elongated through hole 111, thereby driving the polishing head 120 mounted on the output end of the motor 131 to move back and forth along the elongated through hole 111. Of course, a bracket may also be provided at the output end of the electric mechanism or pneumatic mechanism, the motor 131 being mounted on the bracket, and the electric mechanism or pneumatic mechanism drives the bracket to drive the motor 131 to move back and forth along the elongated through hole 111.

[0054] In some embodiments, the two ends of the elongated through hole 111 can be semicircular to adapt to the output shaft of the motor 131 and / or the rotating shaft of the polishing head, so that the output shaft of the motor 131 and / or the rotating shaft of the polishing head can better abut against the semicircular holes at both ends when moving to the two ends of the elongated through hole 111, thereby ensuring the stability of the motor 131 when moving to the end, improving the stability of the polishing head 120, and making the material removal rate of the polished wafer stable, thereby improving the polishing quality of the wafer.

[0055] In a specific implementation, the output shaft of the motor 131 can be placed in the elongated through hole 111, and then can be abutted against the semicircles at both ends of the elongated through hole 111; the rotating shaft of the polishing head 120 can also be placed in the elongated through hole 111, and then can be abutted against the semicircle; or the output shaft of the motor 131 and the rotating shaft of the polishing head 120 can both be partially or completely placed in the elongated through hole 111, so that the output shaft of the motor 131 and the rotating shaft of the polishing head 120 can both be abutted against the semicircle.

[0056] Due to the large size of polishing equipment in related technologies, the polishing liquid is generally delivered using a swing arm, which is a relatively complex structure. However, for wafers supported by third-generation semiconductor materials, smaller polishing equipment is mainly used. Smaller polishing equipment can more accurately control various parameters during the polishing process, reduce material loss during the polishing process, and improve material utilization. In addition, smaller polishing equipment generally provides a more uniform polishing effect.

[0057] Based on this, see Figure 4 In some embodiments, the polishing liquid supply device 140 is further included. The polishing liquid supply device 140 is fixedly disposed in the central area of ​​the support body 110 and is used to supply polishing liquid to the polishing pad.

[0058] It should be noted that the central region of the support body 110 in this embodiment refers to the region near the center of the support body 110. The distance from this region to the center of the support body 110 can be determined based on actual conditions. The larger the diameter of the polishing pad, the larger the region can be, and the smaller the diameter of the polishing pad, the smaller the region can be. The shape of this region can be a circle centered at the center of the support body 110, or it can be an ellipse or other shape, and this embodiment does not impose any restrictions on this.

[0059] In this embodiment, the polishing liquid supply device 140 is fixed to the support body 110. Since the support body 110 and the polishing pad are arranged coaxially during polishing, the polishing liquid supply device 140 delivers polishing liquid to the polishing pad, relying on the centrifugal force of the rotating polishing pad to evenly distribute the polishing liquid onto the polishing pad. Because polishing equipment for third-generation semiconductor materials is relatively small, the use of a fixed polishing liquid supply device 140 utilizes the centrifugal force of the rotating polishing pad to ensure that the polishing liquid is distributed from the center of the polishing pad to the entire pad during polishing, simplifying the equipment structure and reducing equipment costs.

[0060] Further, in some embodiments, see Figure 3The polishing liquid supply device 140 may include: an annular polishing liquid pipe 141 and at least two nozzles 142. The number of nozzles 142 may be the same as the number of polishing heads 120. The annular polishing liquid pipe 141 and the nozzles 142 are both arranged in the central area of ​​the support body 110, and each nozzle 142 is evenly connected to the outer side of the annular polishing liquid pipe 141 along the circumferential direction (relative to the outer side of the annular polishing liquid pipe 141). Figure 3 In the state shown), the nozzles 142 are arranged in a one-to-one correspondence with the areas between adjacent polishing heads 120, and each nozzle 142 is arranged at a preset angle to the moving direction of the polishing head 120 on the support body 110, so that the polishing liquid ejected by the nozzle 142 can be sprayed on the polishing pad 400 along a certain angle.

[0061] For example, see Figure 3 , there are three polishing heads 120 shown in the figure, and correspondingly, three nozzles 142 are connected to the outside of the annular polishing liquid pipe 141, and each nozzle 142 corresponds to the area between adjacent polishing heads 120. Optionally, it can correspond to the center position between the polishing heads 120.

[0062] In a specific implementation, the preset angle between each nozzle 142 and the moving direction of the corresponding polishing head 120 on the support body 110 can be 15° to 45°, that is, the nozzle 142 and the polishing head 120 are arranged in a predetermined direction. Figure 2 The axes AA', BB', and CC' are shown at a predetermined angle to allow the polishing liquid supplied by the nozzle 142 to enter the interior of the polishing head 120 in large quantities through the grooves of the retaining ring at the bottom of the polishing head 120, thereby preventing the formation of a significant bow wave between the polishing liquid and the outer wall of the retaining ring. This ensures that the polishing liquid fully contacts the wafer loaded on the polishing head 120, thereby ensuring a high polishing material removal rate. Preferably, the predetermined angle between each nozzle 142 and the corresponding direction of movement of the polishing head 120 on the support body 110 can be 20° to 30°, allowing the supplied polishing liquid to efficiently enter the interior of the polishing head 120, thereby improving the wafer polishing rate while ensuring the wafer polishing quality.

[0063] It should be noted that the retaining ring is a key component of the polishing head 120. It is located at the bottom of the base of the polishing head 120 and surrounds the outer periphery of the elastic membrane located below the base. The elastic membrane is used to support the wafer to be polished. The polishing liquid supplied by the nozzle 142 enters the space between the wafer and the polishing pad through the grooves of the retaining ring, ensuring that the abrasive in the polishing liquid fully contacts the wafer.

[0064] In this embodiment, polishing liquid is supplied directly from the center of the support body 110, so that the landing points of each polishing liquid are evenly distributed between the polishing heads 120. The centrifugal force of the polishing disk directs the polishing liquid toward a specific polishing head 120. Because the annular polishing liquid pipe 141 and nozzle 142 are fixed to the support body 110, the distribution of the polishing liquid is guaranteed to be fixed.

[0065] The present application also provides a polishing module, see Figure 4 and Figure 5 The polishing module includes a base 200, a polishing plate 300 disposed on the base 200, a polishing pad 400 disposed on the polishing plate 300, and any of the above-mentioned polishing mechanisms 100. The polishing pad 400 has a plurality of annular grooves concentric with the polishing pad 400 formed on its surface facing the polishing mechanism for receiving polishing liquid. The polishing mechanism is placed above the polishing pad 400, and the support body 110 of the polishing mechanism can be coaxially arranged with the polishing pad 400, so that the axis of the elongated through hole 111 on the support body 110 is arranged along the radial direction of the annular groove 410, thereby enabling each polishing head to reciprocate along the radial direction of the annular groove.

[0066] The specific implementation process of the polishing mechanism 100 can be found in the above description, and will not be described in detail in this embodiment.

[0067] In this embodiment, the surface of the polishing pad 400 facing the polishing mechanism 100 is formed with a plurality of annular grooves 410 concentric with the polishing pad 400 for accommodating the polishing liquid. Figure 6 The annular grooves 410 are exaggerated in size; their actual size is relatively small, and they are spaced apart to cover the entire surface of the polishing pad 400. The axes of the elongated through holes 111 are arranged radially along the annular grooves 410, so that each polishing head 120 can reciprocate along the radial direction of the annular grooves 410, i.e., the radial direction of the polishing pad 400.

[0068] It is understood that this embodiment may also include a dresser 500. The dresser 500 swings around a fixed point, and the dresser head configured thereon rotates and applies a downward load to dress the surface of the polishing pad 400, removing impurities, deposits, and wear layers on the surface of the polishing pad 400, keeping the surface of the polishing pad 400 clean and flat, thereby ensuring the stability and consistency of the polishing effect.

[0069] In the embodiment of the present application, each polishing head 120 can move radially along the polishing pad 400 during the polishing operation, that is, reciprocate radially along the annular groove 410 for holding the polishing liquid, so that each polishing head 120 can fully contact the polishing liquid, thereby achieving a more efficient polishing effect. Especially for third-generation semiconductor materials, this polishing method significantly improves polishing efficiency. In addition, since each polishing head 120 moves radially along the annular groove 410, this not only ensures a stable polishing effect for each polishing head 120, but also ensures good consistency of wafers polished using these polishing heads 120. Therefore, this embodiment not only optimizes the polishing process, but also improves product quality and production reliability.

[0070] Further, see Figure 4 and Figure 5 In some embodiments, the loading and unloading platform 600 and a third driving mechanism (not shown) are further included. The loading and unloading platform 600 is provided on the base 200 and is placed on one side of the polishing plate 300 for carrying wafers, i.e., for placing wafers to be polished or polished. The third driving mechanism is connected to the support body 110 for driving the support body 110 to move between the polishing pad 400 and the loading and unloading platform 600 (e.g., along the direction of the polishing pad 400). Figure 7 The third driving mechanism is used to drive the support body 110 to rotate so that each polishing head 120 is placed above the loading and unloading platform 600 in turn and exchanges wafers with the loading and unloading platform 600.

[0071] In this embodiment, the polishing mechanism 100 can move between the polishing plate 300 and the loading and unloading platform 600 to transfer wafers. Specifically, each polishing head 120 loads a wafer to be polished from the loading and unloading platform 600 and places the polished wafer on the loading and unloading platform 600, where it can be transferred to the next process step by a wafer transfer device such as a robot or other transfer equipment.

[0072] See also Figure 7 and Figure 8 The third drive mechanism drives the support body 110 toward the loading and unloading platform 600 and can control the support body 110 to rotate about the center line so that each polishing head 120 is placed above the loading and unloading platform 600 in sequence, and wafers are loaded from the loading and unloading platform 600. The third drive mechanism then drives the support body 110 to translate above the polishing pad 400 and controls the support body 110 to move toward the polishing pad 400 so that each polishing head 120 is pressed against the polishing pad 400. The first drive mechanism then controls the rotation of each polishing head 120 through the first drive mechanism 130, while simultaneously reciprocating along the elongated through-hole 111 to polish each wafer. After polishing is completed, the third drive mechanism drives the support body 110 toward the loading and unloading platform 600 and can control the rotation of the support body 110 to transfer the polished wafers to the loading and unloading platform 600 in sequence.

[0073] The following combination Figures 1 to 8 The polishing mechanism and polishing module shown are briefly described as follows:

[0074] First, each polishing head 120 on the support body 110 is controlled to load a wafer.

[0075] In a specific implementation, the support body 110 is controlled to move relative to the polishing pad 400 toward the loading and unloading platform 600 , and the support body 110 is controlled to rotate so that each polishing head 120 loads wafers from the loading and unloading platform 600 in sequence.

[0076] Next, each polishing head 120 is controlled to move with the wafer to an initial position along its respective long strip through hole 111. Wherein, each polishing head 120 is at an equal distance from the center of the support body 110 at the initial position.

[0077] In a specific implementation, the initial position can be any position of the long strip through hole 111, as long as the distances from each polishing head 120 to the center of the support body are equal, so that the mass distribution of the polishing mechanism 100 is relatively uniform.

[0078] Next, the support body 110 is controlled to drive the polishing head 120 to move above the polishing pad 400, and the support body 110 and the polishing pad 400 are coaxial. Then, the support body 110 is controlled to move toward the polishing pad 400, and the polishing head 120 presses the wafer onto the polishing pad 400.

[0079] Next, the polishing liquid supply device 140 is controlled to deliver the polishing liquid to the polishing pad 400 .

[0080] Specifically, the nozzle 142 sprays the polishing liquid between the polishing heads 120 .

[0081] Next, the polishing plate 300 is controlled to rotate. The polishing plate 300 drives the polishing pad 400 to rotate, and the polishing liquid is evenly distributed on the polishing pad 400 by relying on centrifugal force.

[0082] Next, each polishing head 120 is controlled to rotate and simultaneously move back and forth along the long strip through hole 111 , and the distance between each polishing head 120 and the center of the support body 110 is always kept equal during the movement.

[0083] Finally, after polishing is completed, each polishing head 120 is controlled to unload the wafer.

[0084] Specifically, the support body 110 is controlled to translate relative to the polishing pad 400 toward the loading and unloading platform 600 , and the support body 110 is controlled to rotate, so that each polishing head 120 unloads the polished wafer to the loading and unloading platform 600 .

[0085] In the embodiment of the present application, each polishing head 120 can move radially along the polishing pad 400 during the polishing operation, that is, reciprocate radially along the annular groove 410 for holding the polishing liquid, so that each polishing head 120 can fully contact the polishing liquid, thereby achieving a more efficient polishing effect. In particular, for third-generation semiconductor materials, this polishing method significantly improves polishing efficiency. In addition, since each polishing head 120 moves radially along the annular groove 410, this not only ensures a stable polishing effect for each polishing head 120, but also ensures that the wafers polished using these polishing heads 120 have a high degree of consistency. Therefore, this embodiment not only optimizes the polishing process, but also improves product quality and production reliability.

[0086] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A polishing mechanism for pressing a wafer against a polishing pad for polishing, characterized in that: include: The support body is provided with at least two elongated through holes evenly distributed along the circumference, and the axis of each of the elongated through holes passes through the center of the support body; At least two polishing heads are movably arranged in correspondence with each other at each of the elongated through holes; The first driving mechanism is installed on the supporting body and connected with each polishing head, and is used for driving each polishing head to rotate and move back and forth along the long strip through hole at the same time.

2. The polishing mechanism according to claim 1, characterized in that: Each polishing head maintains an equal distance from the center of the support body during the reciprocating movement along the long strip through hole.

3. The polishing mechanism according to claim 1, characterized in that: The first driving mechanism comprises: At least two motors, each of the motors is placed on a first side of the support body and has an output shaft passing through the support body and connected to a rotating shaft of each polishing head placed on a second side of the support body in a one-to-one correspondence, each of the motors being used to drive each polishing head to rotate; The driving unit is mounted on the supporting body and connected to the housing of each motor, and is used for driving each motor to move back and forth along the long strip through hole, thereby driving the polishing head to move back and forth along the long strip through hole.

4. The polishing mechanism according to claim 3, characterized in that: Both ends of the long strip through hole are semicircular to match the output shaft of the motor and / or the rotating shaft of the polishing head.

5. The polishing mechanism according to any one of claims 1 to 4, characterized in that: Also includes: The polishing liquid supply device is fixedly arranged in the central area of ​​the support body and is used for delivering the polishing liquid to the polishing pad.

6. The polishing mechanism according to claim 5, characterized in that: The polishing liquid supply device comprises: A circular polishing liquid tube is arranged in the central area of ​​the support body; At least two nozzles, each of which is connected to the outside of the annular polishing liquid tube and is evenly distributed along the circumference, and each of the nozzles is arranged in a one-to-one correspondence with the area between adjacent polishing heads, and each of the nozzles is arranged at a preset angle to the moving direction of the polishing head on the support body.

7. The polishing mechanism according to claim 6, characterized in that: The preset angle is 15° to 45°.

8. The polishing mechanism according to any one of claims 1 to 4, characterized in that: The support body comprises: ontology; At least two connectors are connected to the main body and are evenly distributed along the circumference of the main body, and each connector is provided with one of the elongated through holes, and the axis of each of the elongated through holes passes through the center of the main body.

9. A polishing module, characterized in that: include: A base, a polishing disc arranged on the base, a polishing pad arranged on the polishing disc, a second driving mechanism for controlling the rotation of the polishing disc, and a polishing mechanism according to any one of claims 1 to 8; wherein, The polishing pad has a plurality of annular grooves for accommodating polishing liquid formed on the surface thereof facing the polishing mechanism, which are concentric with the polishing pad. The polishing mechanism is placed above the polishing pad, and the support body of the polishing mechanism can be arranged coaxially with the polishing pad so that the axis of the elongated through hole on the support body is arranged along the radial direction of the annular groove, thereby enabling each polishing head to move back and forth along the radial direction of the groove.

10. The polishing module according to claim 9, characterized in that: Also includes: A loading and unloading platform is provided on the base and placed on one side of the polishing plate, and is used for carrying wafers; The third driving mechanism is connected to the supporting body and is used to drive the supporting body to move between the polishing pad and the loading and unloading platform to receive the wafers to be polished from the loading and unloading platform, or transfer the polished wafers to the loading and unloading platform; the third driving mechanism is also used to drive the supporting body to rotate so that each of the polishing heads is placed above the loading and unloading platform in turn to exchange wafers with the loading and unloading platform.

Images