Gas injection device and process equipment

Abstract

The utility model discloses a gas injection device and process equipment, the gas injection device comprises a first body, the first body is provided with a plurality of concentric annular matching areas, each matching area is provided with a plurality of first through holes which are uniformly distributed along the circumferential direction, and the first through holes are communicated with the inside of a cavity; a plurality of concentric annular matching parts, each matching part is correspondingly located on one matching area, each matching part is provided with a plurality of second through holes which are uniformly distributed in the circumferential direction, and any second through hole is vertically overlapped with the corresponding first through hole in the corresponding matching area; when any matching part rotates, the caliber of a first process gas injection channel formed by the overlapped part of any second through hole in the matching part and the corresponding first through hole changes. According to the utility model, fine adjustment of various injection modes of process gas can be realized, so that the injected process gas is uniformly distributed on the substrate, and the etching uniformity is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a gas injection device and process equipment. Background Art

[0002] Maintaining etching uniformity is a significant challenge in etching processes, and the distribution of etching gas within the chamber is a key process parameter affecting this uniformity. In current chamber designs, the exhaust port is located at the bottom of the chamber, causing the etching gas injected into the chamber via the showerhead to be drawn out along the edge of the wafer. This results in a faster etching rate at the edge than in the center, impacting the uniformity of critical dimensions after etching. A common solution is to set up multiple temperature control zones on the electrostatic chuck that holds the wafer. By varying the temperature of different zones on the chuck, the etch uniformity of critical dimensions can be compensated. However, since the number of temperature control zones on the electrostatic chuck is generally small (mostly four zones), each zone has a large influence, making it difficult to precisely control etching uniformity. Furthermore, not all processes can improve etching uniformity by adjusting the electrostatic chuck temperature. For example, when etching low-k materials, the etch rate is insensitive to temperature. Utility Model Content

[0003] The purpose of the present invention is to overcome the above-mentioned defects in the prior art and to provide a gas injection device and process equipment.

[0004] To achieve the above purpose, the technical solution of the utility model is as follows:

[0005] The utility model provides a gas injection device for injecting process gas into a cavity, comprising:

[0006] a first body, the first body having a first surface and a second surface opposite to each other, the first surface being provided with a plurality of concentric annular mating areas, each of the mating areas being provided with a plurality of first through holes uniformly distributed along the circumference, the first through holes being connected to the cavity on the second surface;

[0007] a plurality of concentric annular mating portions, each of the mating portions being located on a corresponding mating area, each of the mating portions being provided with a plurality of second through holes evenly distributed along the circumference, and any one of the second through holes being vertically overlapped with a corresponding one of the first through holes on a corresponding one of the mating areas;

[0008] When any one of the matching parts rotates, the diameter of the first process gas injection channel formed by the overlapping portion of any one of the second through holes and the corresponding one of the first through holes thereon changes.

[0009] Furthermore, the number of the first through holes on each of the matching areas is the same or different, and the number of the second through holes on any one of the matching portions is the same as the number of the first through holes on the corresponding one of the matching areas.

[0010] Furthermore, the number of the first through holes on each of the matching areas gradually increases from the center to the edge of the first body.

[0011] Furthermore, the sizes of the first through holes on the matching areas are the same or different, and the size of the second through hole on any matching portion is the same as the size of the first through hole on the corresponding matching area.

[0012] Furthermore, the first through hole comprises a strip-shaped hole, and the first through hole on each of the matching areas has the same first size in the radial direction, and a second size in the circumferential direction gradually increases from the center to the edge of the first body.

[0013] Furthermore, the annular width of each of the fitting areas is the same, and the annular width of each of the fitting parts is the same; or, the annular width of each of the fitting areas gradually increases from the center to the edge of the first body, and the annular width of each of the fitting parts gradually increases from the center to the edge of the first body.

[0014] Furthermore, an annular groove is correspondingly provided on the first surface at the matching area, the first through hole is located on the bottom surface of the groove, and the matching portion is rotationally fitted into the groove at a corresponding one of the matching areas.

[0015] Furthermore, a third through hole located at the center of the first body is provided on the first surface within the innermost fitting area, or a plurality of third through holes are provided around the center of the first body, and the size of the third through hole is smaller than or equal to the size of the first through hole on the innermost fitting area, and the caliber of the second injection channel for process gas formed by the third through holes remains unchanged.

[0016] Furthermore, it also includes a second body, which is arranged on the first surface. An air chamber is provided in the second body. The air chamber is connected to the gas pipeline and is connected to the upper ends of the first injection channel and the second injection channel located on the first surface side.

[0017] A process equipment includes a support portion arranged in a chamber for arranging a substrate, and the above-mentioned gas injection device, wherein the gas injection device is arranged relative to the support portion and is used to adjust the aperture size of a first injection channel for process gas formed by the overlapping portion of any second through hole and a corresponding first through hole thereon by rotating any matching portion, so as to adjust the injection amount of process gas injected by the first injection channel into the corresponding area of ​​the substrate surface.

[0018] It can be seen from the above technical solution that the utility model provides a plurality of concentric annular matching areas on the first body, and a plurality of first through holes are evenly arranged along the circumference on each matching area, and a corresponding annular matching portion is provided on each matching area, and a plurality of second through holes are evenly arranged along the circumference on each matching portion that overlap with the first through holes. By rotating any matching portion, the aperture size of the first injection channel for process gas formed by the overlapping portion of any second through hole and the corresponding first through hole can be adjusted to adjust the gas injection amount when the process gas is injected from the first injection channel into the corresponding area on the surface of the substrate in the cavity. By rotating the matching portions at different positions at different angles, fine adjustment of various injection methods of the process gas can be achieved, thereby achieving uniform distribution of the process gas on the substrate in the cavity, thereby improving etching uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1-Figure 2 This is a structural schematic diagram of a gas injection device according to a preferred embodiment of the present invention.

[0020] Figure 3 This is a top view of the structure of a first body according to a preferred embodiment of the present invention.

[0021] Figure 4 This is a structural schematic diagram of a matching portion of a preferred embodiment of the present utility model.

[0022] Figure 5 This is a schematic diagram comparing two different overlap states between the second through hole and the first through hole in a preferred embodiment of the present invention. Figure 5 The overlap in (a) is greater than Figure 5 (b) The degree of coincidence.

[0023] Figure 6 This is a top view of the configuration structure of a matching portion on the first body according to a preferred embodiment of the present invention.

[0024] Figure 7 This is a schematic diagram of the structure of a gas injection device installed on process equipment in a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0026] The specific implementation of the present invention is further described in detail below with reference to the accompanying drawings.

[0027] refer to Figure 1 、 Figure 3 、 Figure 4 and Figure 6 The utility model provides a gas injection device for injecting process gas into a cavity of a process equipment. The gas injection device 10 includes a first body 11 and a gas injection amount adjustment mechanism provided on the first body 11.

[0028] The first body 11 has a first surface 111 (upper surface) and a second surface 112 (lower surface) opposite to each other. The first surface 111 is far from the bottom of the cavity, and the second surface 112 is close to the bottom of the cavity.

[0029] A plurality of annular mating areas 12 are provided on the first surface 111 of the first body 11. The mating areas 12 are arranged concentrically on the first surface 111, extending from the inside of the first body 11 toward the outside. Specifically, the radius of the mating areas 12 increases as they extend from the inside of the first body 11 toward the outside, thereby forming a plurality of annular mating areas 12 arranged concentrically on the first surface 111 of the first body 11.

[0030] Furthermore, each annular mating area 12 is provided with a plurality of first through holes 15 evenly distributed along the annular circumference of the mating area 12. The upper ends of the first through holes 15 are connected to the first surface 111, and the lower ends of the first through holes 15 are exposed on the second surface 112, thereby connecting the first through holes 15 on the second surface 112 of the first body 11 with the cavity.

[0031] The gas injection amount adjustment mechanism includes a plurality of annular mating portions 13 disposed on the first surface 111 of the first body 11. Each mating portion 13 is arranged concentrically on the first surface 111, from the inside of the first body 11 toward the outside. Specifically, the radius of each mating portion 13 increases from the inside of the first body 11 toward the outside, thereby forming a plurality of annular mating portions 13 arranged concentrically on the first surface 111 of the first body 11.

[0032] Furthermore, the position of each mating portion 13 on the first surface 111 corresponds to each mating area 12, meaning each mating portion 13 is located on a corresponding mating area 12. The orthographic projection of any mating portion 13 on the first surface 111 must be completely within the boundary of the corresponding mating area 12 below. In other words, the annular shape of any mating portion 13 completely overlaps with the annular shape of the corresponding mating area 12 below, ensuring that the center of the annular shape of any mating portion 13 and the center of the annular shape of the corresponding mating area 12 below are located on the same vertical axis.

[0033] At the same time, each annular matching portion 13 is provided with a plurality of second through holes 14 evenly distributed along the annular circumference of the matching portion 13 , that is, the second through holes 14 pass through the upper surface and the lower surface of the matching portion 13 .

[0034] Any second through hole 14 on any mating portion 13 is provided correspondingly to a first through hole 15 on a corresponding mating area 12 below, or any first through hole 15 on any mating area 12 is provided correspondingly to a second through hole 14 on a corresponding mating portion 13 above. Furthermore, every two corresponding second through holes 14 and first through holes 15 are provided in an overlapping manner.

[0035] When any matching portion 13 rotates, the diameter of the first process gas injection channel 22 formed by the overlapping portion between any second through hole 14 on the matching portion 13 and a corresponding first through hole 15 on a corresponding matching area 12 below changes.

[0036] For example, in the initial state, any second through-hole 14 on any mating portion 13 is aligned with a corresponding first through-hole 15 on the corresponding mating region 12 below, i.e., the two are in a completely overlapping state. Process gas input into the first body 11 can be discharged from the first body 11 through the first process gas injection channel 22 located at the lower end of the second surface 112, formed by the completely overlapping portion between the aligned second through-hole 14 and the first through-hole 15, and injected into the cavity for processing. It will be understood that the diameter of the first process gas injection channel 22 formed at this point is at its maximum.

[0037] In the working state, the first body 11 is kept relatively fixed. When any mating portion 13 is driven to rotate clockwise or counterclockwise relative to a corresponding mating area 12 below it, that is, when any mating portion 13 is driven to rotate clockwise or counterclockwise relative to the first body 11, any second through hole 14 on the mating portion 13 and a corresponding first through hole 15 on a corresponding mating area 12 below will move relative to each other in the circumferential direction, so that the overlap between the two corresponding second through holes 14 and the first through hole 15 will change from complete overlap in the initial state (the overlap is 100%) to partial overlap (the overlap is between 0 and less than 100%), and as the rotation angle of the mating portion 13 increases, the overlap between the two becomes smaller and smaller, that is, the diameter of the first process gas injection channel 22 formed by the overlapping part between the two aligned second through holes 14 and the first through hole 15 will gradually change from large to small.

[0038] refer to Figure 5 (To clearly show the overlapping state between the second through hole 14 and the first through hole 15, Figure 5 Using perspective drawing method, Figure 6 When it is necessary to reduce the diameter of the first process gas injection channel 22 formed by the overlapping portion between any second through hole 14 on any matching portion 13 and the corresponding first through hole 15 on the corresponding matching area 12 below, the first process gas injection channel 22 can be reduced by making any matching portion 13 move relative to the first body 11 (i.e., the corresponding matching area 12 below). Figure 5 (a) Figure 5 (b) The clockwise rotation (counterclockwise rotation is also acceptable) changes the overlap between each two corresponding second through holes 14 and first through holes 15 from the initial complete overlap to partial overlap, and by adjusting the rotation angle of any one of the matching parts 13, the overlap between each two corresponding second through holes 14 and first through holes 15 meets the caliber adjustment requirement for the first process gas injection channel 22. For example, when it is necessary to make a smaller change in the caliber of the first process gas injection channel 22 based on the original maximum, the any one of the matching parts 13 can be rotated by a smaller angle to form the following: Figure 5 (a) shows the first diameter of the process gas first injection channel 22, or when it is necessary to make the diameter of the process gas first injection channel 22 change greatly on the basis of the original maximum, any one of the matching parts 13 can be rotated to a larger angle to form a Figure 5 (b) shows the second diameter of the first process gas injection channel 22. It can be seen that by rotating the matching portion 13 to different angles, Figure 5The first diameter of the first process gas injection channel 22 in (a) is larger than Figure 5 (b) The second diameter of the first process gas injection channel 22. In other words, Figure 5 (a) The overlap between the second through hole 14 and the first through hole 15 is higher than Figure 5 (b) The overlap between the second through hole 14 and the first through hole 15, Figure 5 (a) The rotation angle of the fitting portion 13 is less than Figure 5 (b) The rotation angle of the fitting portion 13, Figure 5 (a) The degree of mutual misalignment between the second through hole 14 and the first through hole 15 in the circumferential direction is less than Figure 5 (b) The degree of mutual misalignment between the second through hole 14 and the first through hole 15 in the circumferential direction.

[0039] The utility model can adjust the aperture size of the first injection channel 22 of the process gas formed by the overlapping part of any second through hole 14 thereon and the corresponding first through hole 15 on the corresponding matching area 12 by rotating any one of the matching parts 13, and further can adjust the gas injection amount when the process gas is injected into the corresponding area of ​​the surface of the substrate to be processed in the cavity by the first injection channel 22. Therefore, by rotating the matching parts 13 at different radial positions at different angles, fine adjustment of various injection methods of the process gas can be achieved, and precise control of the gas distribution in the cavity can be achieved, thereby achieving uniform distribution of the process gas on the substrate in the cavity, so that the etching rate when etching is performed on various areas of the substrate surface tends to be consistent, thereby improving the etching uniformity.

[0040] It should be noted that the present invention does not impose any restrictions on the number of matching areas 12 provided or the number of first through holes 15 provided in each matching area 12. It is understood that the greater the number of matching areas 12 provided and the greater the number of first through holes 15 provided in each matching area 12, the more precise the control of the gas ejection amount in each radial area of ​​the second surface 112 and the greater the adjustable flexibility.

[0041] In some embodiments, the innermost matching area 12 has the smallest diameter, and the matching areas 12 are arranged adjacent to each other from the inside to the outside until the edge of the first body 11. Figure 3 shown.

[0042] In some embodiments, the number of the first through holes 15 on each matching area 12 divided on the first body 11 is the same, such as Figure 3 shown.

[0043] In some embodiments, the number of the second through holes 14 on any one of the mating portions 13 is the same as the number of the first through holes 15 on the corresponding one of the mating regions 12. Figure 6 shown.

[0044] In some embodiments, the number of first through holes 15 on each matching area 12 divided on the first body 11 is different, and the number of second through holes 14 on any matching portion 13 is the same as the number of first through holes 15 on the corresponding matching area 12 .

[0045] In some embodiments, the number of first through holes 15 on each mating area 12 gradually increases from the center to the edge of the first body 11. That is, the number of first through holes 15 on each mating area 12 gradually increases from the innermost mating area 12 to the outermost mating area 12 on the first body 11. The number of second through holes 14 on any mating portion 13 is the same as the number of first through holes 15 on the corresponding mating area 12.

[0046] In some embodiments, any first through hole 15 on any matching area 12 corresponds (is aligned) to a first through hole 15 on an adjacent matching area 12 in radial direction. Figure 3 As shown, as the radius of each matching area 12 increases from the inside to the outside, the first through holes 15 corresponding to each matching area 12 are arranged radially from the innermost matching area 12 to the outermost matching area 12 .

[0047] In some embodiments, each matching area 12 has a common center, and coincides with the center of the first body 11 .

[0048] In some embodiments, each matching portion 13 has a common center that coincides with the center of the first body 11 .

[0049] In some embodiments, the first through holes 15 on each mating area 12 have the same size.

[0050] In some embodiments, the size of any second through hole 14 on any matching portion 13 is the same as the size of the corresponding first through hole 15 on the corresponding matching area 12 .

[0051] In some embodiments, the sizes of the first through holes 15 on the matching areas 12 are different.

[0052] In some embodiments, the first through holes 15 on the same mating area 12 have the same size.

[0053] In some embodiments, the annular width of each mating area 12 (i.e., the distance between the annular inner diameter and the outer diameter of the mating area 12) is the same, the annular width of each mating portion 13 (i.e., the distance between the annular inner diameter and the outer diameter of the mating portion 13) is the same, and the annular width of any mating portion 13 is slightly smaller than the annular width of the corresponding mating area 12.

[0054] In some embodiments, the annular width of each mating area 12 gradually increases from the center to the edge of the first body 11 (i.e., from the innermost mating area 12 to the outermost mating area 12), and the annular width of each mating portion 13 gradually increases from the center to the edge of the first body 11 (i.e., from the innermost mating portion 13 to the outermost mating portion 13), and the annular width of any mating portion 13 is smaller than the annular width of the corresponding mating area 12.

[0055] In some embodiments, the first through hole 15 and the second through hole 14 include circular holes, bar-shaped holes, etc., but are not limited thereto.

[0056] In some embodiments, the first through hole 15 and the second through hole 14 comprise circular holes. The diameters of the first through holes 15 on each mating area 12 are the same, the diameters of the second through holes 14 on each mating portion 13 are the same, and the diameters of the first through holes 15 and the second through holes 14 are the same.

[0057] In some embodiments, the first through-holes 15 and the second through-holes 14 comprise circular holes. The diameters of the first through-holes 15 on the same mating region 12 are the same, and are the same as the diameters of the second through-holes 14 on the corresponding mating portions 13. Furthermore, the diameters of the first through-holes 15 on each mating region 12 gradually increase from the innermost mating region 12 to the outermost mating region 12 (and the diameters of the second through-holes 14 on each mating portion 13 gradually increase from the innermost mating portion 13 to the outermost mating portion 13).

[0058] In some embodiments, the first through holes 15 and the second through holes 14 comprise strip-shaped holes, the length of which is arranged circumferentially. The first through holes 15 on each mating area 12 have the same first radial dimension (width), the first through holes 15 on each mating area 12 have the same second circumferential dimension (length), the second through holes 14 on each mating portion 13 have the same third radial dimension (width), the second through holes 14 on each mating portion 13 have the same fourth circumferential dimension (length), the first dimension and the third dimension are the same, and the second dimension and the fourth dimension are the same.

[0059] In some embodiments, the first through hole 15 and the second through hole 14 comprise strip-shaped holes, and the length direction of the strip-shaped holes is arranged along the circumferential direction. The first through hole 15 on each mating area 12 has the same first dimension in the radial direction, and has the same third dimension in the radial direction as each second through hole 14 on the corresponding mating portion 13. The second dimension in the circumferential direction of the first through hole 15 on any mating area 12 is the same as the fourth dimension in the circumferential direction of the second through hole 14 on the corresponding mating portion 13. The second dimension in the circumferential direction of the first through hole 15 on each mating area 12 gradually increases from the innermost mating area 12 to the outermost mating area 12 (the fourth dimension in the circumferential direction of the second through hole 14 on each mating portion 13 gradually increases from the innermost mating portion 13 to the outermost mating portion 13), as shown in FIG. Figure 6 shown.

[0060] In some embodiments, the line connecting the endpoints of the first through holes 15 corresponding to the positions on each matching area 12 on the same side in the circumferential direction is a straight line, such as Figure 6 The straight dashed line in .

[0061] In some embodiments, the line connecting the endpoints of the first through holes 15 corresponding to the positions on each matching area 12 on the same side in the circumferential direction is an arc curve.

[0062] Figure 6 The structure shows an arrangement in which the number of first through-holes 15 on each mating area 12 is the same, and the number of second through-holes 14 on any mating portion 13 is the same as the number of first through-holes 15 on the corresponding mating area 12. In the initial state, the corresponding first through-holes 15 on each mating area 12 are radially aligned with each other, and the second through-holes 14 on each mating portion 13 are aligned with the corresponding first through-holes 15, forming a radial arrangement from the innermost mating area 12 to the outermost mating area 12. In this state, the diameter of the first process gas injection channel 22 formed by the complete overlap of any two corresponding second through-holes 14 with the first through-hole 15 is maximized. In operation, by rotating the mating portions 13 in the same direction (for example, clockwise as shown) by the same angle, each two corresponding second through-holes 14 overlap with the first through-hole 15 by the same rotational angle. In this state, the diameter of the first process gas injection channel 22 formed at the location of any two corresponding second through-holes 14 and first through-hole 15 decreases. When the reverse operation is performed again, the diameter of the first process gas injection channel 22 will be restored to the maximum state.

[0063] It is understood that the rotation direction and angle of each mating portion 13 can be different. Thus, by finely adjusting the apertures of the first process gas injection channels 22 formed in different regions of the first body 11, precise adjustment and control of the injection amount of the process gas into the cavity can be achieved.

[0064] In some embodiments, each mating portion 13 is independently rotationally controlled by a driving mechanism to adjust the injection amount of the process gas injected into the cavity from different areas of the first body 11 corresponding to each mating area 12, so as to adjust the distribution of the process gas on the substrate surface in the cavity and achieve the purpose of improving the etching uniformity.

[0065] In some embodiments, the driving mechanism includes a driving motor, or other existing applicable driving mechanisms, which are not limited in the present invention.

[0066] refer to Figure 1 In some embodiments, each mating region 12 has a corresponding annular groove 16 on the first surface 111, the bottom of which is located in the first body 11. The first through hole 15 is located on the bottom of the groove 16, so that the upper end is connected to the first surface 111 and the lower end of the first through hole 15 is exposed at the second surface 112. Each mating portion 13 adopts a ring structure and is rotatably engaged with the groove 16 of the corresponding mating region 12.

[0067] In some embodiments, the upper surface of the matching portion 13 located in the groove 16 is flush with the first surface 111 .

[0068] In some embodiments, the upper surface of the matching portion 13 located in the groove 16 is lower than the first surface 111 .

[0069] In some embodiments, the upper surface of the matching portion 13 located in the groove 16 is higher than the first surface 111 .

[0070] refer to Figure 3 and Figure 6 . In some embodiments, a plurality of third through holes 20 are provided on the first surface 111 within the innermost matching area 12, that is, on the central area of ​​the first body 11, and are evenly arranged around the center of the first body 11. The upper end of the third through hole 20 is exposed from the first surface 111, and the lower end of the third through hole 20 is exposed from the second surface 112. No matching portion 13 of any form is provided on the central area of ​​the first body 11 within the innermost matching area 12. That is, no second through hole 14 is provided above the third through hole 20. The third through hole 20 independently forms a second injection channel 21 for process gas. In this way, the diameter of the second injection channel 21 for process gas formed by the third through hole 20 remains unchanged.

[0071] In some embodiments, the diameter of the third through hole 20 is smaller than or equal to the diameter of the first through hole 15 on the innermost matching area 12 .

[0072] In some embodiments, the shape of the third through hole 20 is the same as the shape of the first through hole 15 and the second through hole 14. For example, when the shape of the first through hole 15 and the second through hole 14 is a rectangular hole, the shape of the third through hole 20 is also a rectangular hole (refer to Figure 6 The width of the third through hole 20 in the radial direction is less than or equal to the first dimension of the first through hole 15 in the innermost matching area 12 in the radial direction, and the length of the third through hole 20 in the circumferential direction is less than or equal to the second dimension of the first through hole 15 in the innermost matching area 12 in the circumferential direction.

[0073] In some embodiments, any third through hole 20 radially corresponds to the position of a first process gas injection channel 22 formed by the overlap of a first through hole 15 on the innermost matching area 12 and a second through hole 14 on the innermost matching portion 13 .

[0074] In some embodiments, the number of the third through holes 20 is less than the number of the first through holes 15 on the innermost mating area 12. For example, the number of the third through holes 20 is half the number of the first through holes 15 on the innermost mating area 12 (refer to Figure 3 ) or about half.

[0075] In some embodiments, a third through hole, i.e., a central through hole, is provided on the first surface 111 within the innermost mating region 12, i.e., the central region of the first body 11, located at the center of the first body 11. The upper end of the central through hole is exposed from the first surface 111, and the lower end of the central through hole is exposed from the second surface 112. No mating portion 13 of any kind is provided in the central region of the first body 11 within the innermost mating region 12. That is, no second through hole 14 is provided above the central through hole. The central through hole independently forms a second process gas injection channel. This ensures that the diameter of the second process gas injection channel formed by the central through hole remains unchanged.

[0076] In some embodiments, the diameter of the central through hole is smaller than or equal to the diameter of the first through hole 15 on the innermost matching area 12 .

[0077] In some embodiments, the shape of the central through hole is the same as that of the first through hole 15 and the second through hole 14. For example, when the first through hole 15 and the second through hole 14 are rectangular holes, the shape of the central through hole is also rectangular. However, in this case, the central through hole needs to be a square hole.

[0078] refer to Figure 2 Combined with reference Figure 6. In some embodiments, a second body 17 is further included. The second body 17 is provided on the upper side of the first body 11 and is located on the first surface 111. A uniform air chamber 18 is provided in the second body 17. The uniform air chamber 18 is communicated with the gas pipeline through an air inlet 19 provided on the top of the second body 17, and the uniform air chamber 18 is communicated with the second through hole 14 located on the matching portion 13 below and the third through hole 20 located on the first body 11 and communicated with the second through hole 14. Thus, the uniform air chamber 18 is communicated with the upper end of the first injection channel 22 of the process gas formed by the overlap (complete overlap or partial overlap) of the corresponding second through hole 14 and the first through hole 15, and the upper end of the second injection channel 21 of the process gas formed by the third through hole 20. The process gas input into the uniform gas chamber 18 through the gas pipeline and the gas inlet 19 is evenly diffused in the uniform gas chamber 18, and then injected into the cavity through the lower end of the first process gas injection channel 22 and the lower end of the second process gas injection channel 21 exposed on the second surface 112 of the first body 11 (serving as the spray bottom surface).

[0079] In some embodiments, the first body 11 and the second body 17 are connected as a whole to form the main body of the gas injection device 10 .

[0080] refer to Figure 7 The present invention provides a process apparatus 30 comprising a chamber 31, a support portion 32 (e.g., a stage / platform / electrostatic chuck) disposed within the chamber 31 for arranging a substrate 40 (e.g., a semiconductor wafer), and the aforementioned gas injection device 10. The gas injection device 10 is disposed opposite the support portion 32 (e.g., the gas injection device 10 is disposed directly above the support portion 32). The gas injection device 10 communicates with an external gas pipeline via a gas inlet 19 disposed on the top.

[0081] The gas injection device 10 is used to adjust the aperture size of the first process gas injection channel 22 formed by the overlapping part of any second through hole 14 and the corresponding first through hole 15 thereon by rotating any matching part 13, so as to adjust the injection amount of the process gas injected by the first injection channel 22 into the corresponding area on the surface of the substrate 40, and then adjust the distribution of the process gas on the entire surface of the substrate 40 to achieve improved etching uniformity.

[0082] In some embodiments, the process gas is further injected into the cavity 31 through the second process gas injection channel 21 formed by the third through hole 20 .

[0083] In some embodiments, the gas injection device 10 may be a showerhead for introducing process gas into the chamber 31 .

[0084] In some embodiments, the process equipment 30 may be an etching equipment, for example, a semiconductor dry etching machine.

[0085] In summary, the present invention provides a plurality of concentric annular matching areas 12 on the first body 11 of the gas injection device 10, uniformly provides a plurality of first through holes 15 along the circumferential direction on each matching area 12, and correspondingly provides a circular matching portion 13 on each matching area 12, and uniformly provides a plurality of second through holes 14 overlapping with the first through holes 15 along the circumferential direction on each matching portion 13. By rotating any matching portion 13, the aperture size of the first injection channel 22 of the process gas formed by the overlapping portion of any second through hole 14 and the corresponding first through hole 15 thereon can be adjusted to adjust the gas injection amount when the process gas is injected from the first injection channel 22 into the corresponding area on the surface of the substrate 40 in the cavity 31. By rotating the matching portions 13 at different positions at different angles, fine adjustment of various injection methods of the process gas can be achieved, thereby achieving uniform distribution of the process gas on the substrate 40 in the cavity 31, thereby improving etching uniformity.

[0086] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations may be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the present invention described herein may have other embodiments and may be implemented or carried out in a variety of ways.

Claims

1. A gas injection device for injecting process gas into a cavity, characterized in that: include: a first body, the first body having a first surface and a second surface opposite to each other, the first surface being provided with a plurality of concentric annular mating areas, each of the mating areas being provided with a plurality of first through holes uniformly distributed along the circumference, the first through holes being connected to the cavity on the second surface; a plurality of concentric annular mating portions, each of the mating portions being located on a corresponding mating area, each of the mating portions being provided with a plurality of second through holes evenly distributed along the circumference, and any one of the second through holes being vertically overlapped with a corresponding one of the first through holes on a corresponding one of the mating areas; When any one of the matching parts rotates, the diameter of the first process gas injection channel formed by the overlapping portion of any one of the second through holes and the corresponding one of the first through holes thereon changes.

2. The gas injection device according to claim 1, characterized in that The number of the first through holes on each of the matching areas is the same or different, and the number of the second through holes on any one of the matching portions is the same as the number of the first through holes on the corresponding one of the matching areas.

3. The gas injection device according to claim 2, characterized in that The number of the first through holes on each of the matching areas gradually increases from the center to the edge of the first body.

4. The gas injection device according to claim 1, characterized in that The sizes of the first through holes on the matching areas are the same or different, and the size of the second through hole on any matching portion is the same as the size of the first through hole on the corresponding matching area.

5. The gas injection device according to claim 4, characterized in that The first through hole comprises a strip-shaped hole. The first through hole on each of the matching areas has the same first size in the radial direction, and a second size in the circumferential direction gradually increases from the center to the edge of the first body.

6. The gas injection device according to claim 1, characterized in that The annular width of each matching area is the same, and the annular width of each matching portion is the same; or, the annular width of each matching area gradually increases from the center to the edge of the first body, and the annular width of each matching portion gradually increases from the center to the edge of the first body.

7. The gas injection device according to claim 1, characterized in that An annular groove is correspondingly provided on the first surface at the matching area, the first through hole is located on the bottom surface of the groove, and the matching portion is rotatably fitted in the groove at a corresponding one of the matching areas.

8. The gas injection device according to claim 1, characterized in that A third through hole located at the center of the first body is provided on the first surface within the innermost fitting area, or a plurality of third through holes are provided around the center of the first body. The size of the third through hole is smaller than or equal to the size of the first through hole on the innermost fitting area, and the caliber of the second process gas injection channel formed by the third through holes remains unchanged.

9. The gas injection device according to claim 8, characterized in that It also includes a second body, which is arranged on the first surface. The second body has an air chamber, which is connected to the gas pipeline and to the upper ends of the first injection channel and the second injection channel located on the first surface side.

10. A process equipment, characterized in that: It includes a support portion provided in a cavity for arranging a substrate, and a gas injection device according to any one of claims 1 to 9, wherein the gas injection device is arranged relative to the support portion and is used to adjust the aperture size of a first injection channel for process gas formed by the overlapping portion of any second through hole and a corresponding first through hole thereon by rotating any matching portion, so as to adjust the injection amount of process gas injected by the first injection channel into the corresponding area on the surface of the substrate.

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