Wafer response rate testing device for infrared image sensor

Abstract

The utility model relates to an infrared image sensor wafer response rate testing device, which comprises a black body assembly, a shutter assembly, a diaphragm assembly, an acquisition assembly, a probe assembly and an upper computer, the acquisition assembly comprises an acquisition plate for acquiring the temperature of the first black body or the second black body, the probe assembly comprises a probe station playing a supporting role and a probe card for arranging a probe, a bearing plate for bearing a wafer is arranged in the probe station, the acquisition plate acquires information of the first black body and the second black body, and the probe card is used for clamping the first black body and the second black body. The acquisition board further comprises information acquisition under the condition that the first shutter, the second shutter and the diaphragm are adjusted, and a probe on the probe card is electrically connected with the upper computer and transmits the acquired information to the upper computer for testing. According to the utility model, by arranging the black body assembly, the wafer response rate of the chip on the wafer can be conveniently tested, and meanwhile, the chip on the wafer can be directly tested, so that the test efficiency is improved.

Description

Technical Field

[0001] The utility model relates to a response rate testing device, in particular to a response rate testing device for an infrared image sensor wafer. Background Art

[0002] The manufacturing process for infrared image sensors consists of design (IC design and MEMS design), wafer tape-out, testing, and packaging. During wafer testing, each chip undergoes electrical performance testing to ensure qualified products before packaging. Therefore, wafer testing is a key step in improving the yield of infrared image sensors. Wafer testing is a critical process after wafer fabrication, verifying that each die on the wafer meets device characteristics and other design specifications. After wafer testing, unqualified die can be screened out to determine the wafer's yield.

[0003] Typically, existing techniques test infrared image sensors by cutting them into individual pieces. However, as infrared image sensors shrink in size, testing individual pieces becomes increasingly difficult. Furthermore, repeated manipulation of individual chips during testing can damage the chips, reducing yield, lowering testing efficiency, and impacting final chip production capacity.

[0004] Traditional infrared chips generally do not undergo response parameter testing during wafer testing. Response parameter testing is only performed after device-level packaging is completed. Many response-related problems cannot be discovered in a timely manner, which leads to increased packaging costs and the inability to promptly discover front-end process problems. Therefore, rapid and accurate response parameter testing at the wafer end can promptly discover front-end process problems and wafer-level packaging process problems, and provide a basis for the rapid application of back-end products. Summary of the Invention

[0005] The technical problem solved by the utility model is: the utility model provides an infrared image sensor wafer response rate test device, which overcomes the technical problem that the existing technology is inconvenient for response parameter testing and separate testing of infrared image sensor chips.

[0006] The technical solution of the present utility model is: to provide an infrared image sensor wafer response rate test device, including a blackbody component, a shutter component, a light bar component, a collection component, a probe component, and a host computer, wherein the blackbody component includes a first blackbody forming a low-temperature background and a second blackbody forming a high-temperature background, the shutter component includes a first shutter and a second shutter cooperating with the first blackbody and the second blackbody, the light bar component includes a light bar that changes the magnitude of the incident energy of the blackbody, the collection component includes a collection board for collecting the temperature of the first blackbody or the second blackbody, the probe component includes a probe station for supporting and a probe card for setting probes, a carrying plate for carrying a wafer is set in the probe station, the collection board collects information of the first blackbody and the second blackbody, the collection board also includes information collection under the condition of adjusting the first shutter, the second shutter and the light bar, the probes on the probe card are electrically connected to the host computer and transmit the collected information to the host computer for testing.

[0007] A further technical solution of the present invention is: the light barrier assembly includes a first light barrier and a second light barrier, and the first light barrier is nested in the second light barrier.

[0008] A further technical solution of the present invention is: the blackbody assembly includes a blackbody bracket for fixing the first blackbody and the second blackbody.

[0009] A further technical solution of the present invention is: it also includes a light barrier supporting structure for supporting the light barrier.

[0010] A further technical solution of the present invention is: it also includes a driving module for driving the probe station to move, and the driving module drives the probe station to move to collect information from the multiple wafers on the carrier plate.

[0011] A further technical solution of the present invention is: it also includes a normal temperature blocking piece for blocking the second black body.

[0012] A further technical solution of the present invention is that the first light barrier and the second light barrier are light barriers with adjustable diameter to focal length ratios.

[0013] A further technical solution of the present invention is that the incident angle of the probe is 20 degrees to 30 degrees.

[0014] A further technical solution of the present invention is that the inner wall of the light barrier of the first light and the second light is black.

[0015] The technical effect of the present invention is to provide an infrared image sensor wafer response rate test device, including a blackbody component, a shutter component, a light bar component, a collection component, a probe component, and a host computer, wherein the blackbody component includes a first blackbody forming a low-temperature background and a second blackbody forming a high-temperature background, the shutter component includes a first shutter and a second shutter that cooperate with the first blackbody and the second blackbody, the light bar component includes a light bar that changes the magnitude of the incident energy of the blackbody, the collection component includes a collection board for collecting the temperature of the first blackbody or the second blackbody, the probe component includes a probe station that supports and a probe card for setting probes, the probe station is provided with a supporting plate for carrying the wafer, the collection board collects information of the first blackbody and the second blackbody, the collection board also includes information collection under the condition of adjusting the first shutter and the second shutter and the light bar, the probes on the probe card are electrically connected to the host computer and transmit the collected information to the host computer for testing. The present invention can conveniently test the wafer response rate of chips on the wafer by setting the blackbody component, and at the same time, can directly test the chips on the wafer, thereby improving the test efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is an exploded view of the structure of the present invention. DETAILED DESCRIPTION

[0017] The technical solution of the present utility model is further described below in conjunction with specific embodiments.

[0018] like Figure 1As shown, the specific embodiment of the utility model is: to provide an infrared image sensor wafer response rate test device, including a blackbody component, a shutter component, a light bar component, a collection component, a probe component, and a host computer, the blackbody component includes a first blackbody 11 forming a low-temperature background and a second blackbody 12 forming a high-temperature background, the shutter component includes a first shutter 21 and a second shutter 22 cooperating with the first blackbody 11 and the second blackbody 12, the light bar component includes a light bar that changes the magnitude of the incident energy of the blackbody, the collection component includes a collection board 43 for collecting the temperature of the first blackbody 11 or the second blackbody 12, the probe assembly includes a probe station 42 that serves as a support, a probe card 41 on which probes are set, and a drive module that drives the probe station 42 to move, a carrier plate (not shown in the figure) for carrying wafers is set in the probe station, and the probes on the probe card 41 are electrically connected to the host computer 5 and transmit the collected information to the host computer 5. The testing principle is as follows: Under high and low temperature radiation environments provided by an infrared blackbody, a probe card 41 connected to other configuration devices contacts the test pads of each chip on the wafer to extract corresponding voltage, current, and image information, thereby determining the product yield. The testing process also includes adjusting the first shutter 12 and the second shutter 22 and collecting information under the conditions of the light barrier. The drive module drives the probe station 42 to move to collect information from multiple wafers on the carrier plate. The probes on the probe card 41 are electrically connected to the host computer and transmit the collected information to the host computer for testing.

[0019] like Figure 1As shown, the specific implementation process of the present invention is as follows: the blackbody assembly also includes a blackbody holder 2 for fixing the blackbody, the blackbody holder 2 being fixed to a probe station 42. The blackbody is a surface source blackbody. The blackbody assembly includes a first blackbody 11 forming a low-temperature background and a second blackbody 12 forming a high-temperature background. The shutter assembly includes a first shutter 21 and a second shutter 22 that cooperate with the first blackbody 11 and the second blackbody 12. The shutter assembly also includes a shutter fixing plate 23 and a motor module 24. A gap is set between the first shutter 21 and the second shutter 22. The motor in the motor module 24 controls the switching of the first shutter 21 and the second shutter 22. The light barrier assembly includes a light barrier that changes the amount of incident energy on the blackbody. The light barrier is located below the shutter assembly. The probe assembly includes a probe station 42 that supports the probe, a probe card 41 on which probes are mounted, a fixing member 44, and a circuit board 43 that cooperates with the probe card 41. The probe card 41 is fixed in the middle of the probe station 42. The probe station is provided with a carrier plate (not shown) that supports the wafer. During operation, the wafer to be tested is placed on the carrier plate through the automatic loading mechanism of the probe station. The probe station starts to automatically align the chip, and the probe card and light barrier assembly are aligned with the chip to be tested. After receiving the feedback signal from the probe station, the test machine automatically powers on. The host computer loads parameters to the chip and adjusts the chip to a normal working state. At this time, the chip working state is completed. In this way, the parameters of the chip to be tested are automatically closed-loop set. The first black body 11 automatically moves above the light barrier, and the first black body forms a low-temperature background. The low-temperature background is collected. After the collection is completed, the collected signal is transmitted to the host computer. Then the second black body is automatically moved above the light barrier, and the first black body forms a high-temperature background. The high-temperature background is collected. After the collection is completed, the collected signal is transmitted to the host computer. The host computer analysis and processing system performs analysis and calculation to obtain the response rate, automatically outputs a report, and the test machine automatically powers off. The drive module drives the probe station 42 to move, and the probe station 42 automatically aligns with the next chip. This cycle continues until the wafer test is completed.

[0020] like Figure 1As shown, a preferred embodiment of the present invention is as follows: the light barrier assembly includes a light barrier that changes the magnitude of the incident blackbody energy. The light barrier assembly comprises a first light barrier 31 and a second light barrier 32, with the first light barrier 31 nested within the second light barrier 32. In a preferred embodiment, the assembly further comprises a light barrier support structure 33 that supports the light barrier, with the first and second light barriers 31, 32 mounted within the light barrier support structure 33. The first and second light barriers 31, 32 are light barriers with adjustable diameter-to-focal length ratios. Specifically, the light barriers are designed to have a variable diameter-to-focal length ratio. The ratio of the diameter to the focal length determines the magnitude of the incident energy, with the two being inversely proportional. The larger the diameter-to-focal length ratio, the lower the incident energy; the smaller the diameter-to-focal length ratio, the greater the ratio. This allows for testing response parameters under various conditions, facilitating more accurate testing of the responsivity of infrared image sensor wafers.

[0021] like Figure 1 As shown, a preferred embodiment of the present invention is: the blackbody assembly includes a blackbody bracket 13 for fixing the first blackbody and the second blackbody, the first blackbody and the second blackbody are mounted on the blackbody bracket 13 , and the blackbody bracket is mounted on a probe station 42 .

[0022] like Figure 1 As shown, the preferred embodiment of the present invention is: it also includes a normal temperature blocking sheet for blocking the second black body, which is used to provide heat insulation protection for the second black body.

[0023] like Figure 1 As shown, a preferred embodiment of the present invention is that the probe has an incident angle of 20-30 degrees. This angle ensures good contact between the probe and the test pad, achieving ohmic contact and ensuring accurate test results. Furthermore, a suitable incident angle ensures that the wafers used in wafer-level packaging will not interfere with the chip cover plate, as wafer-level packaging will increase in thickness.

[0024] A further technical solution of the present invention is that the inner walls of the first and second light barriers 31, 32 are black. The inner walls of the light barriers are threaded and sprayed with high-emissivity blackbody paint to reduce the impact of stray light on test results. The low-temperature background baffle is made of a copper alloy with high thermal conductivity and sprayed with blackbody paint to achieve relatively high temperature uniformity. A high-precision thermistor is embedded in the edge of the low-temperature background baffle, and the actual surface temperature is read through the test machine interface.

[0025] The technical effect of the present invention is to provide an infrared image sensor wafer responsivity test device, comprising a blackbody assembly, a shutter assembly, a light barrier assembly, a collection assembly, a probe assembly, and a host computer, wherein the blackbody assembly comprises a first blackbody 11 forming a low-temperature background and a second blackbody 12 forming a high-temperature background, the shutter assembly comprises a first shutter 21 cooperating with the first blackbody 11 and a second shutter 22 cooperating with the second blackbody 12, the light barrier assembly comprises a light barrier that changes the magnitude of the incident energy of the blackbody, the collection assembly comprises a collection board 43 for collecting the temperature of the first blackbody 11 or the second blackbody 12, the probe assembly comprises a probe station 42 for supporting, a probe card 41 for setting probes, and a drive module for driving the probe station 42 to move, the probe station is provided with a carrier plate (not shown) for carrying the wafer, the probes on the probe card 41 are electrically connected to the host computer 5 and transmit the collected information to the host computer 5. By providing the blackbody assembly, the present invention can facilitate the wafer responsivity testing of chips on a wafer, and at the same time, can directly test the chips on the wafer, thereby improving the test efficiency.

[0026] The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention cannot be considered to be limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

Claims

1. An infrared image sensor wafer response rate test device, characterized in that: It includes a blackbody component, a shutter component, a light bar component, a collection component, a probe component, and a host computer. The blackbody component includes a first blackbody that forms a low-temperature background and a second blackbody that forms a high-temperature background. The shutter component includes a first shutter and a second shutter that cooperate with the first blackbody and the second blackbody. The light bar component includes a light bar that changes the magnitude of the incident energy of the blackbody. The collection component includes a collection board that collects the temperature of the first blackbody or the second blackbody. The probe component includes a probe station that serves as a support and a probe card that sets probes. A carrier plate for carrying wafers is set in the probe station. The collection board collects information of the first blackbody and the second blackbody. The collection board also includes information collection when the first shutter, the second shutter and the light bar are adjusted. The probes on the probe card are electrically connected to the host computer and transmit the collected information to the host computer for testing.

2. The infrared image sensor wafer response rate testing device according to claim 1, characterized in that: The light barrier assembly includes a first light barrier and a second light barrier, wherein the first light barrier is nested in the second light barrier.

3. The infrared image sensor wafer response rate testing device according to claim 1, characterized in that: The blackbody assembly includes a blackbody bracket for fixing the first blackbody and the second blackbody.

4. The infrared image sensor wafer response rate testing device according to claim 1, characterized in that: Also included is a light barrier support structure that supports the light barrier.

5. The infrared image sensor wafer response rate testing device according to claim 1, characterized in that: The device further comprises a driving module for driving the probe station to move, wherein the driving module drives the probe station to move so as to collect information from the plurality of wafers on the carrier plate.

6. The infrared image sensor wafer response rate testing device according to claim 1, characterized in that: Also included is a normal temperature blocking sheet for blocking the second black body.

7. The infrared image sensor wafer response rate testing device according to claim 2, characterized in that: The first light barrier and the second light barrier are light barriers with adjustable diameter to focal length ratios.

8. The infrared image sensor wafer response rate testing device according to claim 1, characterized in that: The incident angle of the probe is 20 degrees to 30 degrees.

9. The infrared image sensor wafer response rate testing device according to claim 2, characterized in that: The inner wall of the light barrier of the first light and the second light is black.

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