Adsorption device and ion implanter

Abstract

The utility model provides an adsorption device and an ion implanter, N adsorption baffles are arranged between a transmitting end and a receiving end of the ion implanter, all the adsorption baffles define an adsorption channel, and N is a positive integer; at least one adsorption baffle is connected with a first pipeline, and the interior of the adsorption baffle is hollow to form a first space; the first pipeline is communicated with the first space; and the first pipeline is used for introducing a liquid medium to cool the adsorption baffle so as to adsorb sputtering substances generated by ions emitted by the emitting end through the adsorption channel for ion implantation, and discharging gas generated after the temperature of the liquid medium returns. In the ion implantation process, the adsorption baffle adsorbs generated sputtering objects, the influence of sputtering is reduced, meanwhile, the scattering degree and dosage loss of ions are reduced, the process quality is guaranteed, machine pollution is prevented, and the sputtering objects are absorbed and released through cooling and temperature returning of a gas medium.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor equipment, in particular to an adsorption device and an ion implanter. Background Art

[0002] Ion implantation is a crucial step in semiconductor manufacturing, used to modify the electrical properties of semiconductor materials (such as wafers, commonly known as wafers) by precisely controlling the implantation depth and dosage of high-energy ion beams to achieve specific device performance. However, the photoresist layer covering the wafer surface plays a crucial yet complex role in the ion implantation process. Photoresist, acting as a masking material to protect areas of the wafer where ion implantation is not desired, undergoes significant changes in its physical and chemical properties when impacted by high-energy ion beams. Specifically, when a high-energy ion beam strikes the wafer surface, it not only implants the target area but also transfers significant energy to the overlying photoresist layer. This energy transfer is sufficient to rapidly heat the photoresist layer locally to its vaporization point, causing it to sputter into the ion implantation chamber as vapor or tiny particles. This sputtering phenomenon not only presents multiple challenges but also significantly impacts the stability and efficiency of the ion implantation process.

[0003] First, the vaporization and sputtering of photoresist directly impacts the vacuum level within the tool. A high vacuum environment is essential for a smooth ion implantation process, as the presence of any gas can interfere with the trajectory and energy of the ion beam, thereby affecting the precise calculation and control of the beam dose. The gases and particles generated by photoresist sputtering can quickly fill and contaminate the tool's interior, causing a decrease in vacuum and, in turn, affecting the uniformity and precision of ion implantation.

[0004] Secondly, inward sputtering of photoresist can easily enter the tool's beamline, the critical path for ion beam transport. If these tiny particles adhere to the beamline walls or lens system, they gradually accumulate and form a contamination layer, further affecting the ion beam's focus, directionality, and energy distribution. Over time, this internal contamination not only reduces tool performance and service life but can also lead to more serious failures and downtime.

[0005] The most common approach to addressing these issues is to continuously extract the gas from the tool using a vacuum pump system attached to the tool. While this method can alleviate the problems of gas contamination and vacuum loss to a certain extent, due to the sudden and high-speed nature of sputtering, it is often difficult for the vacuum pump to promptly and effectively remove all sputtering gases and particles. Therefore, its effectiveness is limited and it cannot fundamentally resolve the series of problems caused by photoresist sputtering during ion implantation.

[0006] Therefore, there is an urgent need for an adsorption device and an ion implanter to improve the above problems. Utility Model Content

[0007] The purpose of the utility model is to provide an adsorption device and an ion implanter, which can adsorb sputtering materials generated during the ion implantation process, thereby reducing the influence of sputtering on the process and the pollution of the machine.

[0008] In a first aspect, the present invention provides an adsorption device for use in an ion implanter, comprising N adsorption baffles disposed between an emitting end and a receiving end of the ion implanter, wherein all the adsorption baffles form an adsorption channel, wherein N is a positive integer;

[0009] At least one adsorption baffle is connected to a first pipe, and the interior of the adsorption baffle is hollow to form a first space;

[0010] The first pipe is connected to the first space;

[0011] The first pipe is used to pass liquid medium to cool the adsorption baffle, so as to adsorb sputtering generated by ion injection of ions emitted by the emission end through the adsorption channel, and to discharge gas generated after the liquid medium returns to temperature.

[0012] The beneficial effects of the present invention are as follows: by arranging N adsorption baffles between the emission end and the receiving end of the ion implanter, all the adsorption baffles form an adsorption channel, wherein N is a positive integer; a first pipe is connected to at least one adsorption baffle, and the interior of the adsorption baffle is hollow to form a first space; the first pipe is connected to the first space; the first pipe is used to pass a liquid medium to cool the adsorption baffle, so as to adsorb the sputtering generated by the ions emitted by the emission end passing through the adsorption channel for ion implantation, and to discharge the gas generated after the liquid medium is heated up. During the ion implantation process, the adsorption baffle adsorbs the generated sputtering, reduces the impact of sputtering, and reduces the degree of ion scattering and dose loss, thereby ensuring process quality. After the ion implantation is completed, the adsorbed sputtering is released and then pumped away by the vacuum pump in the machine to prevent machine contamination. The cooling and heating of the gas medium are used to achieve the absorption and release of the sputtering.

[0013] Optionally, a compressor and air source are also included;

[0014] The gas source is connected to one end of the compressor via a second conduit, and the other end of the compressor is connected to the first space via the first conduit. This advantageously allows the compressor to compress the gaseous medium in the gas source to produce a liquid medium, which then flows through the first conduit into the first space during ion implantation, adsorbing sputtered material and reducing the impact of sputtering on the process.

[0015] Optionally, a regulator is also included;

[0016] The regulator is connected to each adsorption baffle and is used to adjust the size of the adsorption channel surrounded by all the adsorption baffles. Its beneficial effect is that by setting the regulator and utilizing the size of the adsorption channel of the regulator, ion implantation of wafers of different specifications can be adapted.

[0017] Optionally, at least one adsorption baffle is provided with a plurality of protrusions on a side close to the adsorption channel;

[0018] The convex portion is hollow inside to form a second space, and the second space is connected to the first space. The beneficial effect is that the adsorption effect of sputtering can be improved by increasing the area of ​​the inner surface of the adsorption baffle.

[0019] Optionally, the protrusion is in the shape of an annular tooth and faces the direction of the ion advance. The beneficial effect is that by setting the protrusion in the shape of an annular tooth and facing the direction of the ion advance, the ion scattering degree and dose loss can be reduced, and the adsorption effect can be improved.

[0020] Optionally, at least one adsorption baffle is provided with an activated carbon layer on a surface adjacent to the adsorption channel; and / or the surface of the protrusion is provided with an activated carbon layer. This advantageously provides the adsorption capacity of the entire adsorption device for sputtering by further enhancing the adsorption capacity of the entire adsorption device by providing the activated carbon layer within the adsorption channel.

[0021] Optionally, the adsorption baffles are curved plates, and all the adsorption baffles form a cylindrical adsorption channel. This advantageously prevents ions from being directed toward the wafer when they collide with the inner wall of the channel during ion implantation, thereby avoiding contamination of the wafer.

[0022] Optionally, the medium is helium; and / or the adsorption baffle is made of graphite. This advantageously allows helium to flow into the adsorption baffle, utilizing its superfluidity, where liquid helium changes from liquid to gaseous state, absorbing a large amount of heat during the process, causing the surface temperature of the adsorption baffle to drop rapidly, thereby adsorbing the sputtered material. Furthermore, the adsorption baffle is made of graphite, which is highly stable and does not affect the ion beam.

[0023] Optionally, the number of adsorption channels formed by all adsorption baffles is more than two. The beneficial effect is that by providing multiple adsorption channels, the application range of the adsorption device can be increased.

[0024] In a second aspect, the present invention further provides an ion implanter comprising an adsorption device of any possible combination according to the first aspect.

[0025] For the beneficial effects of the second aspect, please refer to the description of the first aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic structural diagram of an adsorption device provided in an embodiment of the present utility model;

[0027] Figure 2 A schematic structural diagram of an ion implanter provided in an embodiment of the present utility model;

[0028] Figure 3 A schematic diagram of the change in vacuum absorption value when the wafer has no photoresist provided by an embodiment of the present invention;

[0029] Figure 4 A schematic diagram of the change in vacuum absorption value when the wafer photoresist machine provided by the embodiment of the present invention is not equipped with an adsorption device;

[0030] Figure 5 A schematic diagram of the change in vacuum absorption value when a wafer photoresist machine is provided with an adsorption device according to an embodiment of the present invention.

[0031] Description of reference numerals:

[0032] 1. Adsorption device; 2. Transmitter; 3. Receiver; 4. Wafer; 5. Sputtering;

[0033] 11. Adsorption baffle; 12. Adsorption channel; 13. First pipeline; 14. Compressor; 15. Air source; 16. Second pipeline; 17. Regulator; 18. Raised portion; 19. Lifting rod. DETAILED DESCRIPTION

[0034] To further clarify the objectives, technical solutions, and advantages of the present invention, the following will provide a clear and complete description of the technical solutions in the embodiments of the present invention, in conjunction with the accompanying drawings. It should be understood that the described embodiments represent only a portion of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments derived by persons of ordinary skill in the art without inventive effort are within the scope of protection of the present invention. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meanings understood by persons of ordinary skill in the art to which the present invention belongs. The following will describe the technical solutions in the embodiments of the present invention, in conjunction with the accompanying drawings. The terms used in the following embodiments are intended only to describe specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, the singular expressions "a," "the," "the," and "the" are intended to include expressions such as "one or more," unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of the present invention, "at least one" and "one or more" refer to one or more (including two). The term "and / or" is used to describe a relationship between related objects, indicating that three possible relationships exist. For example, A and / or B can represent: A alone, A and B together, and B alone. A and B can be singular or plural. The character " / " generally indicates an "or" relationship between the related objects.

[0035] References to "one embodiment" or "some embodiments" described in this specification mean that the specific features, structures or characteristics described in conjunction with the embodiment are included in one or more embodiments of the present invention. Therefore, the statements "in one embodiment", "in some embodiments", "in some other embodiments", and "in some other embodiments" appearing in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in another way. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in another way. The term "connected" includes direct and indirect connections, unless otherwise stated. "First" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0036] In the embodiments of the present invention, the words "exemplarily" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of the present invention should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of "exemplarily" or "for example" is intended to present the relevant concepts in a concrete manner.

[0037] In view of the problems existing in the existing technology, such as Figure 1 and Figure 2 As shown, the utility model provides an adsorption device 1, which is applied to an ion implanter. The adsorption device 1 includes two adsorption baffles 11 arranged between the emitting end 2 and the receiving end 3 of the ion implanter, and the two adsorption baffles 11 together form an adsorption channel 12; the two adsorption baffles 11 are respectively connected to a first pipe 13, and the interior of the adsorption baffles 11 is hollow to form a first space; the first pipe 13 is connected to the first space; the first pipe 13 is used to pass a liquid medium to cool the adsorption baffle 11, so as to adsorb the sputtered objects 5 (such as gas and particles) generated by the ions emitted by the emitting end 2 passing through the adsorption channel 12 for ion implantation, and to discharge the gas generated after the liquid medium is heated up. The working principle of the utility model is as follows: the emitting end 2 of the ion implanter is directed to the adsorption channel 12. The receiving end 3 carrying the wafer 4 emits an ion beam for ion implantation. During the ion implantation process, the liquid medium flows along the first pipe 13 into the first space of the adsorption baffle 11, transforming from liquid to gaseous state. In this process, it absorbs a large amount of heat, causing the surface temperature of the adsorption baffle 11 to drop rapidly, thereby adsorbing the sputtered material 5 generated during the ion implantation process, reducing the impact of sputtering, while also reducing the degree of ion scattering and dose loss, ensuring process quality. The vaporized gaseous medium flows out along the first pipe 13. When the ion implantation is completed, the injection of liquid medium is stopped, and the adsorption baffle 11 gradually warms up, releasing the adsorbed sputtered material 5. The adsorbed material 5 is then removed by the vacuum pump within the ion implantation machine to prevent machine contamination. The cooling and warming of the gas medium is used to achieve the absorption and release of the sputtered material 5. It should be understood that the number of adsorption baffles 11 can be adjusted according to actual needs. In addition, the first pipe 13 can be a common pipe or composed of a liquid inlet pipe and a gas return pipe, which can be selected according to actual needs.

[0038] In some embodiments, to reduce the impact of sputtering on the process, such as Figure 1As shown, the adsorption device 1 also includes a compressor 14 and an air source 15; the air source 15 is connected to one end of the compressor 14 via a second pipe 16, and the other end of the compressor 14 is connected to the first space via the first pipe 13. It is worth noting that when the first pipe 13 is a shared pipe, after the liquid medium is injected into the first space, the pressure in the first space will increase due to vaporization after absorbing heat. Therefore, the gaseous medium will flow from the high-pressure area to the low-pressure area where the compressor 14 is located, and will be compressed again into a liquid medium by the compressor 14. When the first pipe 13 includes a liquid inlet pipe and a gas return pipe, the compressor 14 is connected to the first space via the liquid inlet pipe, and the liquid medium flows into the first space from the liquid inlet pipe; the compressor 14 is connected to the first space via the gas return pipe, or the air source 15 is connected to the first space via the gas return pipe, and the vaporized gaseous medium flows back to the compressor 14 or the gas source 15 from the gas return pipe.

[0039] In some embodiments, in order to adapt to the ion implantation of wafers 4 of different specifications, such as Figure 1 As shown, the adsorption device 1 further includes an adjuster 17; the adjuster 17 is connected to each adsorption baffle 11 and is used to adjust the size of the adsorption channel 12 enclosed by all the adsorption baffles 11. For example, the adjuster 17 is connected to each adsorption baffle 11 via a lifting rod 19, and the size of the adsorption channel 12 enclosed by all the adsorption baffles 11 is adjusted by controlling the length of the lifting rod 19.

[0040] In some embodiments, in order to increase the area of ​​the inner surface of the adsorption baffle 11, the adsorption effect of the sputtered object 5 can be improved. Figure 1 As shown, at least one adsorption baffle 11 is provided with a plurality of protrusions 18 on one side close to the adsorption channel 12; the protrusions 18 are hollow inside to form a second space, and the second space is connected to the first space.

[0041] In some specific embodiments, in order to reduce the scattering degree and dose loss of ions and improve the adsorption effect, such as Figure 1 As shown, the protrusion 18 is in the shape of an annular tooth and faces the direction of ion propagation. For example, the protrusion 18 has a curved surface on the side close to the emission end 2 and a concave surface on the side away from the emission end 2 and faces the wafer 4. The concave surface can be composed of multiple inclined or curved surfaces with different slopes.

[0042] In some specific embodiments, in order to further improve the adsorption capacity of the entire adsorption device 1 for the sputtered object 5, an activated carbon layer (not shown) is provided on a side of at least one adsorption baffle 11 close to the adsorption channel 12; and / or an activated carbon layer (not shown) is provided on the surface of the protrusion 18.

[0043] In some embodiments, in order to prevent the ions from moving toward the wafer 4 when hitting the inner wall of the channel during the ion implantation process, thereby preventing the wafer 4 from being contaminated, such as Figure 1 As shown, the adsorption baffles 11 are arc-shaped plates, and all the adsorption baffles 11 form a cylindrical adsorption channel 12. It is worth noting that the shape of the adsorption channel 12 can also be polygonal.

[0044] In some embodiments, the medium is helium. Utilizing the superfluidity of helium, liquid helium flows into the adsorption baffle 11, transforming from liquid to gas. During this process, it absorbs a large amount of heat, rapidly cooling the surface temperature of the adsorption baffle 11 and thereby adsorbing the sputtered material 5. Furthermore, the adsorption baffle 11 is made of graphite, which is highly stable and does not affect the ion beam. It should be understood that a gas that exhibits the same superfluidity as helium and does not readily solidify after compression may also be used as the medium.

[0045] In some embodiments, in order to increase the applicability of the adsorption device 1 , the number of adsorption channels 12 surrounded by all adsorption baffles 11 is more than two.

[0046] Based on the above adsorption device 1, as Figure 1 and Figure 2As shown, the utility model also provides an ion implanter, comprising an adsorption device 1, an ion emitting end 2 and a receiving end 3 carrying a wafer 4, the adsorption device 1 comprising a compressor 14, a gas source 15 and a regulator 17, and two semicircular graphite adsorption baffles 11 arranged between the emitting end 2 and the receiving end 3 of the ion implanter, the two adsorption baffles 11 being arranged up and down to form a cylindrical adsorption channel 12 together; the two adsorption baffles 11 are respectively connected to a first pipe 13, and the interior of the adsorption baffle 11 is hollow to form a first space; the first pipe 13 is connected to the first space; the first pipe 13 is used to pass liquid helium gas to cool the adsorption baffle 11 to adsorb the ions emitted by the emitting end 2 to pass through the first space. The adsorption channel 12 is used to carry out ion implantation and sputtering 5 (such as gas and particles), as well as the gas generated after the liquid helium is discharged and heated up; the gas source 15 is connected to one end of the compressor 14 through the second pipe 16, and the other end of the compressor 14 is connected to the first space through the first pipe 13; the regulator 17 is connected to the two adsorption baffles 11, and is used to adjust the size of the adsorption channel 12 surrounded by the two adsorption baffles 11 arranged above and below; a plurality of annular tooth-shaped graphite protrusions 18 are provided on one side of the two adsorption baffles 11 close to the adsorption channel 12, and are facing the direction of the ions; the interior of the protrusion 18 is hollow to form a second space, and the second space is connected to the first space. The working principle of the present invention is as follows: when in use, the distance between the upper and lower adsorption baffles 11 is first adjusted by the regulator 17 to control the adsorption channel 12 of appropriate size, and then the ion implanter's transmitting end 2 emits an ion beam to the receiving end 3 carrying the wafer 4 for ion implantation. During the movement of the ion beam along the adsorption channel 12, the gaseous helium in the gas source 15 enters the compressor 14 along the second pipe 16. The compressor 14 compresses the gaseous helium into liquid helium. The liquid helium flows along the first pipe 13 into the first space and the second space of the adsorption baffle 11, and changes from liquid to gaseous again, and absorbs a large amount of heat in the process, so that the adsorption The temperature of the surface of the attached baffle 11 and the surface of the raised portion 18 drops rapidly, thereby adsorbing the sputtering material 5 generated during the ion implantation process and reducing the impact of sputtering. At the same time, the annular tooth-shaped raised portion 18 facing the direction of the ion advance can reduce the degree of ion scattering and dose loss, thereby ensuring the process quality. The vaporized gaseous helium flows out along the first pipe 13. When the ion implantation is completed, the injection of liquid helium is stopped, and the adsorption baffle 11 gradually warms up, releasing the adsorbed sputtering material 5, which is then pumped away by the vacuum pump in the ion implantation machine to prevent machine contamination. The cooling and warming of the gas medium is used to achieve the absorption and release of the sputtering material 5.

[0047] Depend on Figure 3 It can be seen that the average vacuum absorption value of wafer 4 without photoresist is 9e-9; Figure 4It can be seen that the average vacuum absorption value of wafer 4 is 6e-8 when the photoresist machine is not equipped with the adsorption device 1; Figure 5 It can be seen that the vacuum absorption value of the wafer 4 when the photoresist machine is equipped with the adsorption device 1 is 1.5e-8. Therefore, it can be seen that the adsorption device 1 provided by the present invention can effectively adsorb the sputtering 5 generated during the ion implantation process, thereby reducing the probability of collision and scattering of the sputtering 5 with the ion beam and reducing the contamination caused by the sputtering 5 to the machine.

[0048] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations may be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the present invention described herein may have other embodiments and may be implemented or carried out in a variety of ways.

Claims

1. An adsorption device, used in an ion implanter, characterized in that: The invention comprises N adsorption baffles arranged between the transmitting end and the receiving end of the ion implanter, wherein all the adsorption baffles form an adsorption channel, wherein N is a positive integer; At least one adsorption baffle is connected to a first pipe, and the interior of the adsorption baffle is hollow to form a first space; The first pipe is connected to the first space; The first pipe is used to pass liquid medium to cool the adsorption baffle, so as to adsorb sputtering generated by ion injection of ions emitted by the emission end through the adsorption channel, and to discharge gas generated after the liquid medium returns to temperature.

2. The device according to claim 1, characterized in that Also includes a compressor and air source; The gas source is connected to one end of the compressor through a second pipeline, and the other end of the compressor is connected to the first space through the first pipeline.

3. The device according to claim 1, characterized in that Also includes regulator; The regulator is connected to each adsorption baffle and is used to adjust the size of the adsorption channel surrounded by all the adsorption baffles.

4. The device according to claim 1, characterized in that At least one adsorption baffle is provided with a plurality of protrusions on a side close to the adsorption channel; The interior of the raised portion is hollow to form a second space, and the second space is communicated with the first space.

5. The device according to claim 4, characterized in that The protrusion is in the shape of an annular tooth and faces the direction in which the ions travel.

6. The device according to claim 4, characterized in that An activated carbon layer is provided on one side of at least one adsorption baffle close to the adsorption channel; and / or an activated carbon layer is provided on the surface of the protrusion.

7. The device according to claim 1, characterized in that The adsorption baffles are arc-shaped plates, and all the adsorption baffles form a cylindrical adsorption channel.

8. The device according to claim 1, characterized in that The medium is helium; and / or the adsorption baffle is made of graphite.

9. The device according to claim 1, characterized in that The number of adsorption channels surrounded by all adsorption baffles is more than two.

10. An ion implanter, characterized in that: The adsorption device comprises the adsorption device according to any one of claims 1 to 9.

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