Device for performing laser etching on flaky wafer to form Taiko structure

Abstract

The utility model relates to a device for etching a flaky wafer by laser to form a Taiko structure, which comprises a wafer arranged on an operating platform, a center shaft focused along femtosecond laser at one end of the long column type array laser, a groove radius R1 focused along the femtosecond laser at the other end of the long column type array laser, and at least one control module, the wafer or the long column type array laser is controlled to rotate, in the circle-by-circle rotation state, the long column type array laser melts and erodes the wafer, the center of the thinned wafer is a groove bottom face, the groove bottom face forms a horizontal disc-shaped concave tangent plane, the periphery of the center of the thinned wafer is not melted and eroded, and the center of the thinned wafer is not melted and eroded. And forming a frame of the wafer, and forming the wafer of a taiko structure by the frame of the wafer and a groove bottom surface of a groove together.

Description

Technical Field

[0001] The utility model relates to a device for forming a Taiko-shaped wafer, in particular to a device for forming a Taiko structure by laser etching a thin wafer. Background Art

[0002] Existing technologies, such as Figure 1 As shown, a lapping machine comprising at least one abrasive block is used to lapping a wafer 1 to be thinned. The lapping block forms a groove bottom 13 in the center of the wafer, with the groove bottom 13 and a ring-shaped border 12 formed around the groove bottom 13. Conventional lapping blocks lapping wafer 1 into a taiko-shaped wafer with a wafer radius R0 and a groove radius R1. Utility Model Content

[0003] The utility model provides a device for laser etching a thin wafer to form a drum structure, which comprises: a long column array laser, provided with at least one femtosecond laser; an operating table, arranged below the long column array laser; a wafer, placed on the operating table, wherein the wafer surface to be thinned has an outer circumference of the wafer being a wafer radius R0, and an inner circumference of the wafer being a groove radius R1, wherein the femtosecond laser along one end of the long column array laser is focused on the central axis, and the femtosecond laser extending to the other end of the long column array laser is focused on the central axis. The invention relates to a method for manufacturing a wafer having a first wafer and a second wafer with a first wafer and a second wafer having ...

[0004] The utility model discloses a device for forming a drum structure by laser etching a thin wafer, wherein the operating table is a rotary refrigerator.

[0005] The utility model discloses a device for forming a drum structure by laser etching a thin wafer, wherein the femtosecond laser uses green light.

[0006] The utility model discloses a device for forming a drum structure by laser etching a thin wafer, wherein the scanning light spot of the femtosecond laser is 2 μm.

[0007] The utility model provides a method for laser etching a thin wafer to form a taiko structure, wherein the steps include: step 1, using a wafer to be thinned to form a taiko structure, and holding the wafer on an operating table; step 2, using the operating table to synchronously rotate along the central axis of the wafer to rotate the wafer to be thinned to form the taiko structure; step 3, using at least one femtosecond laser to form a long column array laser, the long column array laser having a linear arrangement structure, the wafer surface of the wafer to be thinned having an outer circumference of the wafer being a wafer radius R0, and an inner circumference of the wafer being a groove radius R1, wherein the femtosecond laser along one end of the long column array laser is focused on the central axis, and the femtosecond laser extending to the other end of the long column array laser is focused to the groove radius R1; step 4, using a pulse (p) of the at least one femtosecond laser ulse), forming a linear arrangement of columnar light spots to melt and etch the wafer surface of the wafer; and step 5, using the long columnar array laser to shoot at the rotating wafer to be thinned to form a taiko structure, while a control module rotates the wafer for at least one circle, and ablates the wafer in each circle rotation state, forming a groove bottom surface in the central part of the thinned wafer, and the groove bottom surface forms a horizontal disk-shaped concave cross-section, wherein the central part of the thinned wafer is not ablated around, forming the border of the wafer, the border of the wafer and the groove bottom surface of the groove together form the wafer with a taiko structure.

[0008] The utility model provides a method for forming a taiko structure by laser etching a thin wafer, wherein the steps include: step 1, using a wafer to be thinned to form a taiko structure, and holding the wafer on an operating table; step 2, using at least one femtosecond laser to form a long column array laser, wherein the long column array laser has a linear arrangement structure, and the wafer surface of the wafer to be thinned has an outer circumference of the wafer being a wafer radius R0 and an inner circumference of the wafer being a groove radius R1, wherein the femtosecond laser along one end of the long column array laser focuses on the central axis, and the femtosecond laser extending to the other end of the long column array laser focuses on the central axis. laser) is focused to the groove radius R1; step 3, using the pulse of at least one femtosecond laser to form a linear columnar light spot to melt and etch the wafer surface of the wafer; step 4, positioning one end of the long columnar array laser above the central axis of the wafer, rotating the other end of the long columnar array laser to scan; and step 5, the long columnar array laser is emitted to the rotating wafer to be thinned to form a taiko structure, and at the same time a control module rotates the long columnar array laser at least one circle, ablating the wafer in each rotation state, forming a groove bottom surface in the central part of the thinned wafer, and the groove bottom surface forms a horizontal disk-shaped concave cross-section, wherein the periphery surrounding the central part of the thinned wafer is not ablated to form the border of the wafer, and the border of the wafer and the groove bottom surface of the groove together form the wafer with the taiko structure.

[0009] The present invention provides a method for laser etching a thin wafer to form a taiko structure, wherein the operating table is equipped with a turntable refrigerator, wherein the femtosecond laser uses green light, and wherein the scanning spot of the femtosecond laser is 2 μm.

[0010] This utility model discloses a device and method for laser etching a thin wafer to form a taiko structure. The device utilizes a femtosecond laser with a scanning spot size of 2μm, enabling rapid ablation of the wafer surface and thinning the wafer to form the taiko structure. Furthermore, a rotating disk freezer reduces heat dissipation during rapid ablation of the wafer by the femtosecond laser, thereby minimizing the risk of cracking in the taiko structure wafer.

[0011] The above description and explanation are only the description of the preferred embodiment of the present invention. Those skilled in the art may make other modifications based on the following claims and the above description. However, these modifications should still be within the creative spirit of the present invention and within the scope of the rights of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It shows that a conventional grinding machine grinds a wafer to form a wafer with a Taiko structure.

[0013] Figure 2 A schematic diagram showing a cross section of a wafer forming a Taiko structure according to the present invention.

[0014] Figure 3 A three-dimensional schematic diagram of a wafer forming a Taiko structure according to the present invention is shown.

[0015] Figure 4 A schematic diagram of the method of forming a Taiko structure by laser etching a thin wafer according to the present invention is shown.

[0016] Figure 5 Another schematic diagram of the method of forming a Taiko structure by laser etching a thin wafer according to the present invention is shown.

[0017] Explanation of symbols:

[0018] 1 wafer

[0019] 2 operating table

[0020] 3Long column array laser

[0021] 31 femtosecond laser

[0022] 32 light points

[0023] 4 Control Module

[0024] 5. Grinder

[0025] 51 grinding block

[0026] 11 grooves

[0027] 12 borders

[0028] 13 slot bottom

[0029] 14Wafer surface

[0030] D1 Depth

[0031] W1 width

[0032] R0 wafer radius

[0033] R1 groove radius

[0034] C center axis. DETAILED DESCRIPTION

[0035] like Figure 2 as well as Figure 3 As shown, a device for laser etching a thin wafer 1 to form a drum structure includes: a long column array laser 3, provided with at least one femtosecond laser 31; an operating table 2, located below the long column array laser 3; a wafer 1, placed on the operating table 2, wherein the wafer surface 14 of the wafer 1 to be thinned has an outer circumference of the wafer 1 of a wafer radius R0, and an inner circumference of the wafer 1 of a groove radius R1, wherein the femtosecond laser 31 (femtosecond laser) along one end of the long column array laser 3 is focused on the central axis C, and the femtosecond laser 31 (femtosecond laser) extending to the other end of the long column array laser 3 is focused on the central axis C. The invention also includes a control module 4 for controlling the rotation of the wafer or the long cylindrical array laser 3. The long cylindrical array laser 3 ablates the wafer 1 in a rotational state, forming a groove bottom surface 13 in the center of the thinned wafer 1. The groove bottom surface 13 forms a horizontal disc-shaped concave cross-section. The area surrounding the center of the thinned wafer 1 is not ablated, forming a border 12 of the wafer 1. The border 12 of the wafer 1 and the groove bottom surface 13 of the groove 11 together form the wafer 1 with a taiko structure. The border 12 has a depth D1 and a width W1.

[0036] like Figure 2 as well as Figure 3 As shown, a device for laser etching a thin wafer 1 to form a drum structure, wherein the operating table 2 is a rotary refrigerator.

[0037] like Figure 2 as well as Figure 3 FIG. 1 shows a device for laser etching a thin wafer 1 to form a taiko structure, wherein the femtosecond laser 31 uses green light.

[0038] like Figure 2 as well as Figure 3 As shown, a device for laser etching a thin wafer 1 to form a Taiko structure, wherein the scanning spot 33 of the femtosecond laser 31 is 2 μm.

[0039] like Figure 4As shown, a method for laser etching a thin wafer 1 to form a drum structure, wherein the steps include: step 1, using a wafer 1 to be thinned to form a drum structure, holding the wafer 1 on an operating table 2; step 2, using the operating table 2 to synchronously rotate along the central axis C of the wafer 1 to rotate the wafer 1 to be thinned to form a drum structure; step 3, using at least one femtosecond laser 31 (femtosecond laser) to form a long column array laser 3, the long column array laser 3 has a linear arrangement structure, the wafer surface 14 of the wafer 1 to be thinned has an outer circumference of the wafer 1 of a wafer radius R0, and an inner circumference of the wafer 1 is a groove radius R1, wherein the femtosecond laser 31 (femtosecond laser) along one end of the long column array laser 3 focuses on the central axis C, and the femtosecond laser 31 (femtosecond laser) extending to the other end of the long column array laser 3 is focused on the central axis C. laser) is focused to the groove radius R1; step 4, using the pulse of the at least one femtosecond laser 31 (femtosecond laser) to form a linear columnar light spot 33 to melt and etch the wafer surface 14 of the wafer 1; and step 5, using the long columnar array laser 3 to shoot at the rotating wafer 1 to be thinned to form a taiko structure, and at the same time a control module 4 rotates the wafer 1 at least one circle, and ablates the wafer 1 in the rotation state, forming a groove bottom surface 13 in the central part of the thinned wafer 1, and the groove bottom surface 13 forms a horizontal disk-shaped concave cross-section, wherein the surrounding area surrounding the central part of the thinned wafer 1 is not ablated to form a frame 12 of the wafer 1, and the frame 12 of the wafer 1 and the groove bottom surface 13 of the groove 11 together form the wafer 1 with a taiko structure.

[0040] like Figure 5As shown, a method for laser etching a thin wafer 1 to form a drum structure, wherein the steps include: step 1, using a wafer 1 to be thinned to form a drum structure, holding the wafer 1 on an operating table 2; step 2, using at least one femtosecond laser 31 (femtosecond laser) to form a long column array laser 3, the long column array laser 3 has a linear arrangement structure, the wafer surface 14 of the wafer 1 to be thinned has an outer circumference of the wafer 1 of a wafer radius R0, and an inner circumference of the wafer 1 is a groove radius R1, wherein the femtosecond laser 31 (femtosecond laser) along one end of the long column array laser 3 is focused on the central axis C, and the femtosecond laser 31 (femtosecond laser) extending to the other end of the long column array laser 3 is focused on the groove radius R1; step 3, using the at least one femtosecond laser 31 (f In step 4, one end of the long column array laser 3 is positioned above the central axis C of the wafer 1, and the other end of the long column array laser 3 is rotated to perform scanning; and in step 5, the long column array laser 3 is emitted toward the rotating wafer 1 to be thinned to form a taiko structure, while a control module 4 rotates the long column array laser 3 at least one circle. In the state of rotation, the wafer 1 is ablated to form a groove bottom surface 13 in the central portion of the thinned wafer 1, and the groove bottom surface 13 forms a horizontal disk-shaped concave cross-section, wherein the periphery surrounding the central portion of the thinned wafer 1 is not ablated, forming a frame 12 of the wafer 1. The frame 12 of the wafer 1 and the groove bottom surface 13 of the groove 11 together form the wafer 1 with a taiko structure.

[0041] like Figure 4 ,as well as Figure 5As shown, a method for laser etching a thin wafer 1 to form a taiko structure is described, wherein the operating table 2 is equipped with a turntable refrigerator. The femtosecond laser 31 uses green light. The scanning spot 33 of the femtosecond laser 31 is 2 μm. However, this is not limiting. At least one control module 4 controls the rotation of the wafer 1 or the rotation of the long column array laser 3. In a rotational state, the long column array laser 3 ablates the wafer 1 to form a thinned wafer 1. Therefore, the control module 4 can only control the operating table 2 to rotate the wafer 1, or the control module 4 can only control the rotation of the long column array laser 3 to ablate the wafer 1 fixed to the operating table 2. Alternatively, at least one control module 4 can simultaneously control the rotation of the wafer 1 and the long column array laser 3, with each rotating in a rotational state to form a thinned wafer 1 with a taiko structure.

[0042] The above description and explanation are only the description of the preferred embodiment of the present invention. Those skilled in the art may make other modifications based on the following claims and the above description. However, these modifications should still be within the spirit of the invention and within the scope of the invention.

Claims

1. A device for laser etching a thin wafer to form a drum structure, characterized in that: include: A long columnar laser array, equipped with at least one femtosecond laser; An operating table is provided below the long column array laser; A wafer is placed on the operating table, wherein the wafer surface to be thinned has an outer circumference of the wafer being a wafer radius R0 and an inner circumference of the wafer being a groove radius R1, wherein a femtosecond laser along one end of the long column array laser is focused on a central axis, and a femtosecond laser extending to the other end of the long column array laser is focused on the groove radius R1; and At least one control module controls the rotation of the wafer or the rotation of the long column array laser. In the state of rotation by circle, the long column array laser ablates the wafer, forming a groove bottom surface in the central part of the wafer after thinning, and the groove bottom surface forms a horizontal disk-shaped concave cross-section, wherein the surrounding area around the central part of the wafer after thinning is not ablated, forming the border of the wafer. The border of the wafer and the groove bottom surface of the groove together form the wafer with a taiko structure.

2. The device for laser etching a thin wafer to form a Taiko structure according to claim 1, wherein: The operating table is a rotary type freezer.

3. The device for forming a Taiko structure by laser etching a thin wafer as claimed in claim 1, wherein: The femtosecond laser uses green light.

4. The device for forming a Taiko structure by laser etching a thin wafer as claimed in claim 1, wherein: The scanning spot of this femtosecond laser is 2 μm.

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