Pressure control device for semiconductor processing equipment and semiconductor processing equipment

Abstract

The utility model discloses a pressure control device for semiconductor processing equipment and the semiconductor processing equipment, and relates to the technical field of semiconductor processing, the pressure control device for the semiconductor processing equipment comprises a mounting top plate arranged at the end part of a rack body, and a hole penetrating through a feeding pipeline is formed in the mounting top plate; the end part of the feeding pipeline is fixedly connected with a gas-material mixer, and the gas-material mixer is fixedly connected above the reaction chamber; according to the utility model, the flow monitoring sensor and the air inlet electromagnetic flow controller which are arranged on the feeding pipeline are used for controlling the air inlet flow and pressure, and the air outlet electromagnetic flow control valve arranged on the recycling pipeline is matched for controlling the air outlet pressure and flow; the pressure in the reaction chamber is accurately controlled, and the end part of each feeding pipeline is provided with a control structure, so that the inlet amount of each gas can be accurately controlled, and the control effect on the pressure is further improved.

Description

Technical Field

[0001] The utility model specifically relates to the technical field of semiconductor processing, in particular to a pressure control device for semiconductor processing equipment and semiconductor processing equipment. Background Art

[0002] Semiconductor processing equipment is used to manufacture semiconductor devices, such as photolithography equipment, etching equipment, vapor deposition equipment, and cleaning equipment. Vapor deposition equipment is further divided into chemical vapor deposition and physical vapor deposition. Chemical vapor deposition is widely used due to its wide range of applications, ability to deposit a variety of substances, and high coating quality.

[0003] The gaseous chemical precursor is introduced into the reaction chamber through a pipe, allowing it to diffuse to the surface of the substrate. Through the high temperature and high pressure environment in the reaction chamber, the reaction gas undergoes a chemical reaction on the surface of the substrate to form a solid deposit, thereby forming a coating film on the semiconductor surface in the reaction chamber.

[0004] However, in practice, people have noticed that during the chemical vapor deposition process, the pressure in the reaction chamber is directly related to the concentration of the reaction gas, and the concentration of the reaction gas will affect the quality of the semiconductor coating. When the pressure is too low or too high, it will lead to uneven semiconductor coating. When multiple gases enter the reaction chamber at the same time, the amount of each gas entering the reaction chamber needs to be strictly controlled according to the ratio, and the amount of each gas entering will affect the pressure in the reaction chamber, resulting in the internal pressure being uncontrollable. Utility Model Content

[0005] The purpose of this utility model is to provide a pressure control device for semiconductor processing equipment. By controlling the inlet and outlet air flow rates in the reaction chamber, the pressure in the reaction chamber is controlled, achieving precise pressure control, thereby solving the technical problems raised in the above-mentioned background technology.

[0006] To achieve the above objectives, the present invention provides the following technical solutions:

[0007] A pressure control device for semiconductor processing equipment includes a mounting top plate mounted at the end of a frame, a hole for passing a feed pipe is formed in the mounting top plate, a gas-material mixer is fixedly connected to the end of the feed pipe, and the gas-material mixer is fixedly connected above a reaction chamber;

[0008] The feeding pipeline includes a connecting pipeline connected to the gas-material mixer, and the end of the connecting pipeline away from the gas-material mixer is fixedly connected to a flow monitoring sensor, and the end of the flow monitoring sensor away from the connecting pipeline is fixedly connected to an air intake electromagnetic flow controller.

[0009] As a further technical solution of the present invention, the gas-material mixer comprises a hollow mixing chamber, the outer side of the hollow mixing chamber is provided with inclined pipes in a ring array, and each end of the inclined pipe is fixedly connected to a quick connector.

[0010] As a further technical solution of the present invention, a quick clamp corresponding to the quick connector is fixedly connected to one end of the connecting pipe close to the hollow mixing chamber, and the quick clamp is engaged with the end of the quick connector away from the inclined pipe.

[0011] As a further technical solution of the present invention, a discharge nozzle is fixedly connected to the bottom of the hollow mixing chamber, and the end of the discharge nozzle passes through the reaction chamber and extends to the inner side of the reaction chamber.

[0012] As a further technical solution of the present invention, the bottom of the reaction chamber is fixedly connected to a recovery pipe in an annular array, and the top of the recovery pipe extends to the inside of the reaction chamber, and the recovery pipe is communicated with the inside of the reaction chamber.

[0013] As a further technical solution of the present invention, the recovery pipe is fixedly connected to a gas outlet electromagnetic flow control valve, and the end of the recovery pipe away from the reaction chamber is connected to a waste gas collection tank.

[0014] The present invention provides a semiconductor processing device, comprising a frame body having a bottom frame, an end support frame fixedly connected to a side of the bottom frame, and an end of the end support frame away from the bottom frame fixedly connected to a mounting top plate;

[0015] A lifting hydraulic cylinder is fixedly connected to the mounting top plate in a rectangular array, and a reaction chamber is provided below the lifting hydraulic cylinder. The reaction chamber includes a reaction chamber and a sealing end cover located between the mounting top plate and the bottom frame.

[0016] As a further technical solution of the present invention, the end of the lifting hydraulic cylinder passes through the mounting top plate and is fixedly connected to the sealing end cover, while the bottom of the reaction chamber is fixedly connected to the bottom frame;

[0017] The bottom frame is provided with through holes corresponding to the reaction chambers, and a recovery pipe fixedly connected in a ring array at the bottom of the reaction chamber passes through the through holes and extends into the bottom frame.

[0018] As a further technical solution of the present invention, a waste gas collection tank is fixedly connected to the bottom frame, and the end of the recovery pipe away from the reaction chamber is fixedly connected to the waste gas collection tank, and the recovery pipe is connected to the inner side of the waste gas collection tank.

[0019] As a further technical solution of the present invention, the top of the sealing end cover is fixedly connected to a gas mixer, and the bottom of the gas mixer passes through the sealing end cover and extends to the inside of the reaction chamber, and the gas mixer is fixedly connected to a feeding pipe in an annular array;

[0020] One end of the feeding pipe away from the gas-material mixer passes through the mounting top plate and extends to the upper side surface of the mounting top plate.

[0021] Compared with the prior art, the beneficial effects of the present invention are:

[0022] The utility model controls the intake flow and pressure through a flow monitoring sensor and an intake electromagnetic flow controller installed on the feeding pipe, and then cooperates with the outlet electromagnetic flow control valve installed on the recovery pipe to control the outlet pressure and flow. By controlling the flow of feed and discharge, the pressure in the reaction chamber is precisely controlled, and a control structure is provided at the end of each feeding pipe, which can precisely control the amount of each gas entering, thereby improving the pressure control effect; the utility model is provided with multiple ends of the feeding pipes connected to the inner side of the hollow mixing chamber through inclined pipes, and the inclined setting of the inclined pipes and the hollow mixing chamber can form a vortex on the inner side of the hollow mixing chamber when the gas enters the inner side of the hollow mixing chamber, quickly mixing multiple gaseous chemical precursors, thereby improving the uniformity during the deposition process; the utility model is convenient for connecting and disassembling the feeding pipe and the gas-material mixer through the clamping fit between the quick clamp and the quick connector, and different gaseous chemical precursors can be replaced according to needs. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a structural schematic diagram of the utility model in use state.

[0024] Figure 2 This utility model Figure 1 Schematic diagram of the bottom structure.

[0025] Figure 3 This utility model Figure 1 Schematic diagram of part of the structure.

[0026] Figure 4 This utility model Figure 3 A partial enlarged schematic diagram.

[0027] Figure 5 This utility model Figure 3 Schematic diagram of the bottom structure.

[0028] Figure 6 This utility model Figure 5 A partial enlarged schematic diagram.

[0029] Figure 7It is a schematic diagram of the position structure of the gas-material mixer and the feeding pipeline in the utility model.

[0030] Figure 8 This utility model Figure 7 A partial enlarged schematic diagram.

[0031] Figure 9 It is a three-dimensional structural diagram of the gas-material mixer of the utility model.

[0032] Figure 10 This utility model Figure 9 Schematic diagram of the bottom structure.

[0033] In the picture:

[0034] Install top plate-1, lifting hydraulic cylinder-2, reaction chamber-3, sealing end cover-4, exhaust gas collection tank-5, gas-material mixer-6, hollow mixing chamber 61, inclined pipe-62, quick connector-63, discharge nozzle-64, feeding pipe-7, connecting pipe-71, flow monitoring sensor-72, air inlet electromagnetic flow controller-73, quick clamp-74, recovery pipe-8, air outlet electromagnetic flow control valve-81. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0036] See also Figure 1-10 The embodiment of the present invention provides a pressure control device for semiconductor processing equipment, comprising a mounting top plate 1 mounted at the end of a frame body, a hole for passing a feed pipe 7 is opened in the mounting top plate 1, an end of the feed pipe 7 is fixedly connected to a gas-material mixer 6, and the gas-material mixer 6 is fixedly connected above the reaction chamber;

[0037] The feeding pipe 7 includes a connecting pipe 71 connected to the gas-material mixer 6, and the end of the connecting pipe 71 away from the gas-material mixer 6 is fixedly connected to a flow monitoring sensor 72, and the end of the flow monitoring sensor 72 away from the connecting pipe 71 is fixedly connected to an air intake electromagnetic flow controller 73.

[0038] In this embodiment, the gas-material mixer 6 includes a hollow mixing chamber 61 , and an annular array of inclined pipes 62 is provided on the outside of the hollow mixing chamber 61 . A quick connector 63 is fixedly connected to the end of each inclined pipe 62 .

[0039] Furthermore, one end of the connecting pipe 71 close to the hollow mixing chamber 61 is fixedly connected to a quick clamp 74 corresponding to the quick connector 63 , and the quick clamp 74 is snap-fitted with one end of the quick connector 63 away from the inclined pipe 62 .

[0040] Furthermore, a discharge nozzle 64 is fixedly connected to the bottom of the hollow mixing chamber 61 , and an end of the discharge nozzle 64 passes through the reaction chamber 3 and extends to the inner side of the reaction chamber 3 .

[0041] In this embodiment, the bottom of the reaction chamber is fixedly connected to a recovery pipe 8 in an annular array, and the top of the recovery pipe 8 extends to the inside of the reaction chamber, and the recovery pipe 8 is communicated with the inside of the reaction chamber.

[0042] More specifically, the recovery pipe 8 is fixedly connected to a gas outlet electromagnetic flow control valve 81 , and the end of the recovery pipe 8 away from the reaction chamber is connected to a waste gas collection tank 5 .

[0043] By adopting the above technical solution, the gaseous chemical precursor enters the hollow mixing chamber 61 through the connecting pipe 71, the intake air flow is controlled by the air intake electromagnetic flow controller 73, and the flow monitoring sensor 72 detects the flow of the air flow, and the gaseous chemical precursor enters the hollow mixing chamber 61 in a tangential direction through the inclined inclined pipe 62, forming a vortex on the inner side of the hollow mixing chamber 61. Multiple streams of gaseous chemical precursors enter the inner side of the hollow mixing chamber 61 and are mixed, and finally sprayed into the reaction chamber through the discharge nozzle 64 at the bottom of the hollow mixing chamber 61. The excess gaseous chemical precursor in the discharge nozzle 64 enters the waste gas collection tank 5 through the recovery pipe 8, and the flow inside the recovery pipe 8 is controlled by the outlet electromagnetic flow control valve 81, thereby accurately controlling the pressure inside the reaction chamber.

[0044] The embodiment of the present utility model provides a semiconductor processing device, including a frame body, the frame body having a bottom frame 9, the side of the bottom frame 9 is fixedly connected to an end support frame 10, and the end of the end support frame 10 away from the bottom frame 9 is fixedly connected to a mounting top plate 1;

[0045] A lifting hydraulic cylinder 2 is fixedly connected to the mounting top plate 1 in a rectangular array, and a reaction chamber is provided below the lifting hydraulic cylinder 2, wherein the reaction chamber includes a reaction chamber 3 and a sealing end cover 4 located between the mounting top plate 1 and the bottom frame 9.

[0046] In this embodiment, the end of the lifting hydraulic cylinder 2 passes through the mounting top plate 1 and is fixedly connected to the sealing end cover 4, while the bottom of the reaction chamber 3 is fixedly connected to the bottom frame 9;

[0047] Furthermore, through holes corresponding to the reaction chambers 3 are formed on the bottom frame 9 , and recovery pipes 8 fixedly connected in an annular array at the bottom of the reaction chamber 3 pass through the through holes and extend into the bottom frame 9 .

[0048] More specifically, the bottom frame 9 is fixedly connected to the waste gas collecting tank 5 , and the end of the recovery pipe 8 away from the reaction chamber 3 is fixedly connected to the waste gas collecting tank 5 , and the recovery pipe 8 is communicated with the inner side of the waste gas collecting tank 5 .

[0049] In this embodiment, the top of the sealing end cover 4 is fixedly connected to the gas mixer 6, and the bottom of the gas mixer 6 passes through the sealing end cover 4 and extends to the inside of the reaction chamber 3. The gas mixer 6 is fixedly connected to the feeding pipe 7 in an annular array.

[0050] One end of the feeding pipe 7 away from the gas-material mixer 6 passes through the mounting top plate 1 and extends to the upper side surface of the mounting top plate 1 .

[0051] By adopting the above technical solution, the semiconductor is placed in the reaction chamber 3, and then the lifting hydraulic cylinder 2 pushes the sealing end cover 4 tightly against the top of the reaction chamber 3 to seal the inner side of the reaction chamber 3. Then, the gaseous chemical precursor is fed into the reaction chamber 3 through the feeding pipe 7, and the high temperature and high pressure environment in the reaction chamber 3 is utilized to deposit on the semiconductor. The excess gas enters the waste gas collection tank 5 through the recovery pipe 8 for temporary storage. By controlling the flow rate in the feeding pipe 7 and the recovery pipe 8, the pressure inside the reaction chamber 3 is controlled.

[0052] The working principle of the present invention is as follows: when in use, the lifting hydraulic cylinder 2 first drives the sealing end cover 4 to move upward, and then the semiconductor is placed in the reaction chamber 3. The lifting hydraulic cylinder 2 pushes the sealing end cover 4 to fit tightly to the top of the reaction chamber 3. Then, the gaseous chemical precursor enters the hollow mixing chamber 61 through the connecting pipe 71. The flow monitoring sensor 72 and the air inlet electromagnetic flow controller 73 cooperate with each other to control the gas entering the connecting pipe 71. The gaseous chemical precursor enters the hollow mixing chamber 61 along the tangential direction through the inclined pipe 62 set obliquely. In the process, a vortex is formed in the hollow mixing chamber 61, and a plurality of gaseous chemical precursors are mixed and then uniformly sprayed into the inner side of the reaction chamber 3 through the discharge nozzle 64. The gaseous chemical precursors are deposited on the surface of the semiconductor through the high-pressure and high-temperature environment inside the reaction chamber 3. The excess gas enters the waste gas collection tank 5 through the recovery pipe 8 for short-term storage. The outlet gas flow rate inside the hollow mixing chamber 61 is controlled by the outlet electromagnetic flow control valve 81 installed on the recovery pipe 8, so that high pressure is formed inside the hollow mixing chamber 61, and the pressure inside the hollow mixing chamber 61 is precisely controlled.

[0053] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the present invention is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be encompassed within the present invention. Any reference sign in a claim should not be construed as limiting the claim to which it relates.

[0054] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

Claims

1. A pressure control device for semiconductor processing equipment, characterized in that: The apparatus comprises a mounting top plate (1) mounted at the end of the frame, wherein a hole is provided in the mounting top plate (1) for passing through a feed pipe (7), and an end of the feed pipe (7) is fixedly connected to a gas-material mixer (6), and the gas-material mixer (6) is fixedly connected above the reaction chamber; The feeding pipe (7) includes a connecting pipe (71) in communication with the gas-material mixer (6), and an end of the connecting pipe (71) away from the gas-material mixer (6) is fixedly connected to a flow monitoring sensor (72), and an end of the flow monitoring sensor (72) away from the connecting pipe (71) is fixedly connected to an air intake electromagnetic flow controller (73).

2. The voltage control device for semiconductor processing equipment according to claim 1, wherein: The gas-material mixer (6) comprises a hollow mixing chamber (61), the outer side of the hollow mixing chamber (61) is provided with inclined pipes (62) in a circular array, and each end of the inclined pipe (62) is fixedly connected to a quick connector (63).

3. The voltage control device for semiconductor processing equipment according to claim 2, wherein: One end of the connecting pipe (71) close to the hollow mixing chamber (61) is fixedly connected to a quick clamp (74) corresponding to the quick connector (63), and the quick clamp (74) is engaged with the end of the quick connector (63) away from the inclined pipe (62).

4. The voltage control device for semiconductor processing equipment according to claim 3, wherein: A discharge nozzle (64) is fixedly connected to the bottom of the hollow mixing chamber (61), and the end of the discharge nozzle (64) passes through the reaction chamber (3) and extends to the inner side of the reaction chamber (3).

5. The voltage control device for semiconductor processing equipment according to claim 1, wherein: The bottom of the reaction chamber is fixedly connected to a recovery pipe (8) in an annular array, and the top of the recovery pipe (8) extends to the inside of the reaction chamber, and the recovery pipe (8) is communicated with the inside of the reaction chamber.

6. The voltage control device for semiconductor processing equipment according to claim 5, wherein: The recovery pipe (8) is fixedly connected to a gas outlet electromagnetic flow control valve (81), and the end of the recovery pipe (8) away from the reaction chamber is connected to a waste gas collection tank (5).

7. A semiconductor processing device, characterized in that: The machine body comprises a frame body having a bottom frame (9), an end support frame (10) fixedly connected to a side of the bottom frame (9), and an end of the end support frame (10) away from the bottom frame (9) fixedly connected to a mounting top plate (1); A lifting hydraulic cylinder (2) is fixedly connected to the mounting top plate (1) in a rectangular array, and a reaction chamber is provided below the lifting hydraulic cylinder (2), wherein the reaction chamber includes a reaction chamber (3) and a sealing end cover (4) located between the mounting top plate (1) and the bottom frame (9).

8. The semiconductor processing equipment according to claim 7, wherein: The end of the lifting hydraulic cylinder (2) passes through the mounting top plate (1) and is fixedly connected to the sealing end cover (4), while the bottom of the reaction chamber (3) is fixedly connected to the bottom frame (9); A through hole corresponding to the reaction chamber (3) is provided on the bottom frame (9), and a recovery pipe (8) fixedly connected in an annular array to the bottom of the reaction chamber (3) passes through the through hole and extends into the bottom frame (9).

9. The semiconductor processing equipment according to claim 8, wherein: The bottom frame (9) is fixedly connected to a waste gas collecting tank (5), and the end of the recovery pipe (8) away from the reaction chamber (3) is fixedly connected to the waste gas collecting tank (5), and the recovery pipe (8) is communicated with the inner side of the waste gas collecting tank (5).

10. The semiconductor processing equipment according to claim 9, wherein: The top of the sealing end cover (4) is fixedly connected to a gas-material mixer (6), and the bottom of the gas-material mixer (6) passes through the sealing end cover (4) and extends to the inner side of the reaction chamber (3), and the gas-material mixer (6) is fixedly connected to a feeding pipe (7) in an annular array. One end of the feeding pipe (7) away from the gas-material mixer (6) passes through the mounting top plate (1) and extends to the upper side of the mounting top plate (1).

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