Substrate bearing device and semiconductor equipment process chamber

Abstract

The utility model discloses a substrate bearing device and a semiconductor equipment process chamber, the substrate bearing device comprises a middle area and a bearing area surrounding the middle area, the bearing area is provided with at least two recesses arranged at intervals, and each recess is used for bearing a substrate. A concave structure is arranged in an interval area or a middle area between every two adjacent recesses and is used for measuring the distance of the substrate bearing device; a jump signal formed based on the distance measurement information of the recess structure and the position information of each recess relative to the recess structure indicate that the optical detection device only samples the deposition material layer of the substrate in the recess. The recessed structures are arranged in the interval areas between the adjacent recesses or arranged in the middle area, so that the adverse effect on the accuracy of the distance measurement data of the recessed structures scanned and collected by the distance measurement device due to shaking of the substrate bearing device in the rotating process is reduced or avoided, and the test accuracy is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor measurement, in particular to a substrate carrying device and a semiconductor equipment process chamber. Background Art

[0002] Vapor deposition is a key method for growing semiconductor materials within semiconductor devices. Under appropriate temperature and pressure conditions, reactant gases undergo a vapor deposition reaction on the surface of a wafer substrate, forming a semiconductor material layer. The uniformity of the material layer deposited on the wafer surface is a key indicator of its quality. Rotating the wafer carrier, which in turn rotates the wafer, is a key method for improving uniformity.

[0003] During the growth of the semiconductor material layer, an optical detection device (such as a spectrometer) is used to emit a detection light beam in a specific wavelength range to the semiconductor material layer. The spectral information of the detected light in the specific wavelength range can be used to obtain information such as the growth rate of the semiconductor material layer, thereby providing a reference basis for process control.

[0004] Because the carrier rotates during the process, the optical inspection system's sampling points can fall outside the wafer carrier area, which holds the wafer substrates. This optical information from the non-wafer carrier area is incorporated into the subsequent integration calculations, weakening or even losing the fluorescence signal and affecting the accuracy of the optical inspection system's scanning beam across the wafer carrier area. Utility Model Content

[0005] In view of the shortcomings of the prior art mentioned above, the purpose of the present invention is to provide a substrate carrying device and a semiconductor equipment process chamber comprising the substrate carrying device, which is conducive to controlling the detection light beam emitted by the optical detection device to only scan the carrier area, and reducing or avoiding the adverse effects on the accuracy of the ranging data caused by the jitter of the substrate carrying device during rotation.

[0006] In order to achieve the above-mentioned and other related purposes, the present invention provides a substrate supporting device, comprising:

[0007] Central region;

[0008] The carrying area surrounds the central area and is provided with at least two recesses arranged at intervals, each recess being used to carry a substrate;

[0009] The recessed structure is arranged in the spacing area between adjacent recesses, or in the middle area, for distance measurement.

[0010] Optionally, the adjacent recesses are a first recess and a second recess, the spacing area between the first recess and the second recess is the first spacing area, and the spacing area close to the second recess and adjacent to the first spacing area is the second spacing area; a tangent extending from the center of the middle area toward the first spacing area and tangent to the first recess is defined as the first tangent, and a tangent extending from the center of the middle area toward the second spacing area and tangent to the second recess is defined as the second tangent, and the recess structure is arranged in a closed area surrounded by the first tangent, the second tangent and the edge of the middle area.

[0011] Optionally, a tangent line extending from the center of the middle region toward the first spacing region and tangent to the second recess is defined as a third tangent line, and the recessed structure is disposed in a closed area surrounded by the first tangent line, the third tangent line and the edge of the middle region.

[0012] Optionally, the edge of the middle region is tangent to the edge of each recess.

[0013] Optionally, the opening size of the recessed structure is configured to allow the light beam emitted by the distance measuring device to pass through, and when the recessed structure is arranged in the middle area, the depth of the recessed structure is not less than 1 mm.

[0014] Optionally, the opening size of the recessed structure is not smaller than the bottom size of the recessed structure.

[0015] Optionally, at least two recesses are evenly arranged around the central region, and the number of the recessed structures is at least 2 and are arranged around the same circumference.

[0016] According to one aspect of the present invention, a semiconductor equipment process chamber is provided, comprising:

[0017] chamber body;

[0018] The substrate carrying device is arranged in the chamber body, and the substrate carrying device is provided with a cavity for carrying the substrate, and a recessed structure for distance measurement.

[0019] Optionally, it also includes:

[0020] An optical distance measuring device is provided in the chamber body and is arranged opposite to the substrate supporting device to emit a distance measuring beam toward the recessed structure and receive corresponding feedback beam information;

[0021] The optical detection device is arranged in the chamber body and is arranged opposite to the substrate supporting device to emit a detection light beam to the area where the cavity is located and receive corresponding feedback light beam information.

[0022] Optionally, the optical ranging device includes a blue light ranging device, which is used to emit a blue light ranging beam.

[0023] Compared with the prior art, the substrate carrying device and semiconductor equipment process chamber described in the present invention have at least the following features:

[0024] Beneficial effects:

[0025] The substrate supporting device of the present invention includes a central area and a supporting area surrounding the central area. The supporting area is provided with at least two recesses arranged at intervals, each of which is used to support a substrate. A recessed structure is provided in the interval area between adjacent recesses or in the central area to measure the distance of the substrate supporting device. A jump signal formed based on the distance measurement information of the recessed structure and the position information of each recess relative to the recessed structure instructs the optical detection device to only sample the deposited material layer of the substrate in the recess. In addition, the recessed structure is provided in the interval area between adjacent recesses or in the central area, which reduces or avoids the adverse effect of jitter of the substrate supporting device during rotation on the accuracy of the distance measurement data of the recessed structure scanned and collected by the distance measuring device, thereby improving the test accuracy.

[0026] The semiconductor equipment process chamber of the present invention includes the above-mentioned substrate carrying device and also has the above-mentioned technical effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic structural diagram of the carrying surface of the substrate carrying device in one embodiment of the present utility model;

[0028] Figure 2 This is a structural schematic diagram of the carrying surface of a substrate carrying device in another embodiment of the present invention;

[0029] Figure 3 This is a structural schematic diagram of a closed area marked on the carrying surface of the substrate carrying device in an embodiment of the present utility model;

[0030] Figure 4 This is a structural schematic diagram showing another enclosed area on the carrying surface of the substrate carrying device in an embodiment of the present invention;

[0031] Figure 5 A schematic diagram showing the position of a recessed structure marked on the supporting surface of a substrate supporting device in one embodiment of the present invention;

[0032] Figure 6 A schematic diagram showing the position of a recessed structure marked on the supporting surface of a substrate supporting device in another embodiment of the present invention;

[0033] Figure 7 A schematic diagram showing the position of a recessed structure marked on the supporting surface of a substrate supporting device in another embodiment of the present invention;

[0034] Figure 8This is a schematic diagram of a partial cross-sectional structure of a substrate supporting device in one embodiment of the present utility model;

[0035] Figure 9 A schematic diagram of a partial cross-sectional structure of a substrate supporting device in another embodiment of the present invention;

[0036] Figure 10 This is a schematic diagram of a partial cross-sectional structure of a substrate supporting device in one embodiment of the present invention;

[0037] Figure 11 This is a schematic structural diagram of a semiconductor equipment process chamber in an embodiment of the present invention;

[0038] Figure 12 A schematic diagram of the sampling trajectory of the semiconductor equipment process chamber during testing and the opening and closing of the optical detection device in an embodiment of the present invention;

[0039] Figure 13 This is a voltage-time curve diagram formed by algorithm conversion based on distance measurement data in the example of the first embodiment of the present utility model;

[0040] Figure 14 This is a voltage-time curve diagram formed by algorithm conversion based on distance measurement data and detection data in an example of an embodiment of the present utility model;

[0041] Figure 15 This is a voltage-time curve diagram formed by algorithm conversion based on distance measurement data and detection data in another example of the embodiment of the present utility model;

[0042] Figure 16 In one example of the embodiment of the present utility model, Figure 14 Or the top characteristic diagram of the ranging jump signal in 15;

[0043] Figure 17 In another example of the embodiment of the present utility model, Figure 14 Or the top characteristic diagram of the ranging jump signal in 15;

[0044] Figure 18 This is a diagram showing the relationship between the distance measured by the concave hole and the time of ranging in an embodiment of the present invention.

[0045] List of reference numerals:

[0046] 100 substrate carrier

[0047] 101 Central Region

[0048] 1011 Confined Area

[0049] 102 Loading Area

[0050] 1021 Concave

[0051] 1021-1 First Concave

[0052] 1021-2 Second Concave

[0053] 1022 First interval area

[0054] 1023 Second interval area

[0055] 103 Marginal Area

[0056] 104, 104' sunken structure

[0057] 1041 First Opening Structure

[0058] 1042 Second opening structure

[0059] 201 The First Cut

[0060] 202 Second Tangent

[0061] 203 Third Tangent

[0062] 300 light spots

[0063] 400 Optical Distance Measuring Device

[0064] 500 Optical Detection Device

[0065] 600 drive unit

[0066] 700 substrates

[0067] 800 sampling traces DETAILED DESCRIPTION

[0068] The following describes the implementation of the present invention using specific embodiments. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different perspectives and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features within these embodiments may be combined with one another, unless they conflict.

[0069] It should be noted that the diagrams provided in the embodiments of the present invention are only schematic illustrations of the basic concept of the present invention. Although the diagrams only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of each component in actual implementation can be changed at will, and the layout of the components may also be more complex. The structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions for the implementation of this application. Therefore, they have no technical significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed in this application without affecting the efficacy and purpose of the present invention.

[0070] Example 1

[0071] This embodiment provides a substrate carrying device, referring to Figure 1 and 2 The substrate supporting device 100 includes a central region 101 and a supporting region 102 surrounding the central region 101. The supporting region 102 is provided with at least two spaced-apart recesses 1021, each of which is used to support a substrate. A recessed structure 104 is provided in the space between adjacent recesses 1021 or in the central region 101. The recessed structure 104 is used to measure the distance to the supporting surface of the substrate supporting device 100. A jump signal generated based on the distance measurement information from the recessed structure 104 and the position information of each recess 1021 relative to the recessed structure 104 instructs the optical detection device to only sample the deposited material layer of the substrate within the recess 1021, thereby ensuring that the optical detection device collects signals of a specific wavelength from the deposited material layer on the substrate. In addition, the recessed structure 104 is arranged in the spacing area between adjacent recesses 1021, or in the middle area 101, which reduces or avoids the adverse effect of the jitter of the substrate supporting device 100 during rotation on the accuracy of the ranging data of the recessed structure 104 scanned and collected by the ranging device, thereby improving the test accuracy.

[0072] Specifically, refer to Figure 1 The substrate supporting surface of the substrate supporting device 100 includes a central area 101, a supporting area 102 surrounding the central area 101, and an edge area 103 surrounding the supporting area 102. The central area 101 is located in the middle of the supporting surface.

[0073] Specifically, in some embodiments, the bearing area 102, the edge area 103 and the middle area 101 are coaxially arranged. Figure 1 and Figure 2As shown, the edge of the central region 101 is tangent to the edge of each cavity 1021. In this embodiment, the central region 101 is the central region of the bearing surface and is circular in shape. The bearing region 102 and the edge region 103 are annular and concentrically arranged around the periphery of the central region 101.

[0074] At least two recesses 1021 are spaced apart within the support region 102, each recess 1021 being used to support a substrate. In some embodiments, the recesses 1021 are evenly distributed along the same circumference around the central region 101, for example, symmetrically arranged around a circle formed by the center of the support surface of the substrate support device 100. In this embodiment, there are four recesses 1021, spaced apart circumferentially along the annular support region 102, with the edge of the central region 101 being tangential to the edge of each recess 1021.

[0075] Reference Figure 1 , the recessed structure 104 is arranged in the interval area between adjacent recesses 1021, or in the middle area 101, such as Figure 2 As shown. Figure 11 When the substrate supporting device 100 rotates under the action of the driving device 600, it will inevitably cause the substrate supporting device 100 to vibrate (for example, shake in the radial direction of the substrate supporting device 100). The impact of this vibration becomes more significant as the rotation speed increases, and the impact on the edge area of ​​the substrate supporting device 100 is far greater than that on the inner area. Therefore, arranging the recessed structure 104 in the central area 101 or in the interval area between adjacent recesses 1021 can reduce or avoid the adverse impact on the accuracy of the distance measurement data caused by the rotational vibration of the substrate supporting device.

[0076] like Figure 11 and Figure 12 As shown, during the rotation of the substrate supporting device 100, the optical distance measuring device 400 is fixed relative to the supporting surface of the substrate supporting device 100, so as to continuously emit distance measuring light in a fixed direction toward the supporting surface of the substrate supporting device 100. At this time, the optical distance measuring device 400 only receives the distance measuring light information and feeds back the light information to the optical detection device 500 or the main control device of the optical detection device 500 (not shown in the figure). The optical detection device 500 or the main control device of the optical detection device 500 (not shown in the figure) converts the light information into voltage-time relationship data, which is processed by the denoising and impurity removal algorithm and the fitting algorithm to form the voltage-time relationship data. Figure 13The process continues, the optical ranging device 400 continues to provide ranging light, the optical detection device 500 or the main control device that controls the optical detection device 500 receives the ranging light information from the optical ranging device 400, and the optical detection device 500 or the main control device that controls the optical detection device 500 (not shown in the figure) determines the position of the recessed structure 104 based on the trigger information formed by the ranging jump signal, and controls the detection light emitted by the optical detection device 500 to scan only the surface of the recessed structure 1021 based on the position information of each recessed cavity 1021 relative to the recessed structure 104, the size information of each recessed cavity 1021, and the rotation speed (i.e., the detection light is not emitted by the optical detection device 500). Figure 12 In the non-cavity area, the detection light is controlled to be turned off (i.e. Figure 12 The optical detection device 500 or the main control device for controlling the optical detection device 500 receives the detection information of the optical detection device 500, and the denoising and impurity removal algorithm and the fitting algorithm form the following image: Figure 14 Or the test jump signal and ranging jump signal shown in 15, where Figure 14 and Figure 15 The difference is that the position of the recessed structure 104 relative to the cavity 1021 is different, and the resulting test jump signal and ranging jump signal may overlap or not overlap based on the relative positions of the recessed structure 104 and the cavity 1021. It should be noted that the optical detection device 500 or the main control device of the optical detection device 500 determines the moment to turn on or off the detection light based on the position information of each cavity 1021 relative to the recessed structure 104, the size information of each cavity 1021 and the rotation speed. The specific implementation method is conventional technical means. The optical detection device 500 or the main control device that controls the optical detection device 500 will further refer to Figure 14 Alternatively, the graphic information shown in 15 is selected based on performing an integration algorithm on the graphic area obtained by scanning the semiconductor material layer area to obtain the thickness of the semiconductor material layer.

[0077] It is well known in the art that the more complex the denoising and impurity removal algorithm processing and fitting algorithm are, the greater the error introduced. Therefore, further optimizing the position of the recessed structure 104 to avoid a large overlap between its ranging jump signal and the test jump signal will help reduce the requirements for algorithm complexity and reduce algorithm errors.

[0078] Specifically, refer to Figure 3 The adjacent two recesses 1021 are respectively the first recess 1021-1 and the second recess 1021-2, and the interval area between the first recess 1021-1 and the second recess 1021-2 is the first interval area 1022. Figure 4 The spacing area close to the second cavity 1021-2 and adjacent to the first spacing area 1022 is the second spacing area 1023. Figure 3 , a tangent line extending from the center of the middle region 101 toward the first spacing region 1022 and tangent to the first cavity 1021-1 is defined as a first tangent line 201, and a tangent line extending from the center of the middle region 101 toward the second spacing region 1023 and tangent to the second cavity 1021-2 is defined as a second tangent line 202. Figure 4 , a tangent line extending from the center of the middle region 101 toward the second spacing region 1023 and tangent to the second cavity 1021 - 2 is defined as a third tangent line 203 .

[0079] In one example, if Figure 3 As shown, the recessed structure 104 is disposed in a sealed area 1011 surrounded by the first tangent line 201, the second tangent line 202 and the edge of the middle area 101. The edge of the recessed structure 104 is located in the sealed area 1011 and is not tangent to the first tangent line 201 and the second tangent line 202 of the sealed area 1011 at the same time, or as shown in FIG. Figure 5 The recessed structure 104' shown is tangent to both the first tangent line 201 and the second tangent line 202. During the process, the time period (distance jump signal) when the optical distance measuring device 400 scans the recessed structure does not overlap with the time period (test jump signal) when the optical detection device 500 scans the concave cavity 1021 near it. Figure 14 As shown; or only the start time and the end time have an intersection, and the repeated time period is small, which further reduces the complexity requirement of the algorithm, thereby reducing the algorithm error and improving the test accuracy.

[0080] In one example, if Figure 4 As shown, the recessed structure 104 is disposed within a confined area 1011 defined by the first tangent line 201, the third tangent line 203, and the edge of the central region 101. The time period during which the optical ranging device 400 scans the recessed structure (not shown) only overlaps with the time period during which the optical detection device 500 scans a single cavity 1021-2. This reduces the complexity of the algorithm, thereby reducing algorithm errors and improving test accuracy.

[0081] In one example, if Figure 6 As shown in FIG, one of the concave structures 104' only intersects with the first tangent line 201, and the other concave structure 104' only intersects with the second tangent line 202. Since the concave structure 104' only intersects with either the first tangent line 201 or the second tangent line 202, in this case, the time period during which the optical distance measuring device 400 scans the concave structure and the time period during which the optical detection device 500 scans the concave structure near the concave structure only partially overlap, and the complexity requirement for the algorithm is not high. Figure 7As shown, the concave structure 104 ′ intersects the first tangent line 201 and the second tangent line 202 respectively. In this case, the complexity of the algorithm is relatively high because the concave structure 104 ′ is too close to the center and has many time periods intersecting with the concave cavity.

[0082] The opening size of the recessed structure 104 is configured to allow the light beam emitted by the optical distance measuring device 400 to pass through. Figure 8 The radial dimension d thereof ensures that the light spot 300 emitted by the optical distance measuring device 400 can be accommodated. The recessed structure 104 is recessed from the surface of the substrate supporting device 100 toward the interior of the substrate supporting device 100 .

[0083] In some embodiments, referring to Figure 8 The opening size of the recessed structure 104 is equal to the bottom size thereof. For example, the recessed structure 104 may be cylindrical.

[0084] The number of the recessed structures 104 can be one or at least two. When the substrate supporting device 100 rotates too fast and the sampling speed of the optical distance measuring device 400 is difficult to match, the number of the recessed structures 104 can be increased to assist in determining the position of the recessed structures 104.

[0085] In some embodiments, there are at least two recessed structures 104, and the two recessed structures 104 are arranged around the same circumference. The recesses 1021 on the substrate carrier 100 are evenly spaced. In this way, when the sampling of one recessed structure 104 is difficult to match, resulting in its jump signal being insignificant or even lost, the sampling signal of another recessed structure 104 can replace the sampling signal of the recessed structure 104 to perform the aforementioned voltage-time graph judgment. In some more specific embodiments, the recessed structures 104 are further located on the same circumference formed along the center of the carrier surface and are on the same diameter. In some more specific embodiments, two recessed structures 104 can be spaced 180 degrees apart, three recessed structures 104 can be spaced 120 degrees apart, or four recessed structures 104 can be spaced 90 degrees apart.

[0086] The longitudinal cross-sectional shape of the recessed structure 104 can be flexibly adjusted according to process requirements to ensure that the jump signal characteristics generated by scanning it can be significantly different from the jump signal characteristics generated by scanning the semiconductor material layer on the substrate, thereby reducing algorithm difficulty.

[0087] For example, this embodiment further adjusts the shape of the recessed structure 104, setting the opening size of the recessed structure 104 larger than the bottom size, so that the fluctuation of the inner wall of the recessed structure 104 when scanned is significantly different from the fluctuation of the surface of the semiconductor material layer when scanned. In some embodiments, the opening size of each radial cross-section of the recessed structure 104 along the recessed direction is non-uniform.

[0088] In one example, referring to Figure 9 The concave structure 104 includes a top and a bottom along the concave direction. The opening size of the top of the concave structure 104 is larger than the opening size of the bottom. The concave structure 104 can be provided with two opening structures. The concave structure 104 includes a first opening structure 1041 and a second opening structure 1042 in sequence along the concave direction. The opening size of the first opening structure 1041 is larger than the opening size of the second opening structure 1042. The optical distance measuring device 400 scans the jump signal characteristics formed by the structure, and its top characteristics are as follows: Figure 16 As shown, it can be clearly distinguished from Figure 14 as well as Figure 15 The top feature of the test transition signal is shown.

[0089] In another example, referring to Figure 10 The opening size of each radial section of the recessed structure 104 along the recessed direction can also be set to gradually decrease. Figure 10 As shown, the cross section of the concave structure 104 is semicircular, and the optical distance measuring device 400 scans the transition signal characteristics formed by the structure, and its top characteristics are as shown in FIG. Figure 17 As shown, it can also be clearly distinguished from Figure 14 as well as Figure 15 The top feature of the test transition signal is shown.

[0090] The depth of the concave structure 104 cannot be too deep or penetrate the graphite disk, otherwise it is easy to cause the graphite disk to crack during processing or there is a risk of cracking. The depth of the concave structure 104 cannot be too shallow, otherwise the jump signal will not be significant due to the insignificant height difference, affecting the control effect. If the depth of the concave structure 104 is too low, even if the design is as follows: Figure 9 and Figure 10 In the process of deposition, the recessed structure 104 is easily blocked and filled, which makes it more difficult to distinguish the transition signal from the transition signal formed by the semiconductor material layer, and the corresponding algorithm required becomes more difficult.

[0091] In addition, when the substrate carrier 100 is in a high temperature environment (e.g., above 700 degrees), hot gases (e.g., source gas, purge gas, carrier gas) will affect the detection light emitted by the optical ranging device 400 and / or the reflected light of the semiconductor material layer, causing the optical ranging device 400 to measure the distance of the same position on the substrate carrier 100 at different temperatures. There is a deviation in the data obtained. Structural factors such as the degree of tooth clearance of the reducer of the rotating motor and the stability of the connection between the support shaft and the carrier will cause the high-speed rotating substrate carrier 100 to inevitably vibrate. Therefore, it is necessary to use the optical ranging device 400 to perform a ranging test on the substrate carrier 100 under process temperature and rotation speed conditions to examine the influence of process temperature and rotation speed on ranging, and provide a design basis for setting the minimum depth of the recessed structure 104.

[0092] Specifically, the substrate carrier 100 is a graphite disk covered with a silicon carbide coating, and the optical ranging device 400 is a blue light rangefinder. The chamber temperature is set to different temperatures. When the chamber temperature meets the temperature condition, the ranging light of the optical ranging device 400 is controlled to be emitted vertically from the bottom of a cavity. Then, the graphite disk is controlled to rotate at a certain speed. The optical ranging device 400 (blue light rangefinder) obtains the ranging light and feeds back the ranging data to the host computer. The host computer selects the ranging data of the cavity based on the rotating motor data and the ranging data, and obtains, for example, Figure 18 The distance-time relationship diagram shown (graphite disk rotating at 900 rpm at room temperature) shows that at high rotation speeds, the distance measurement value varies. The specific implementation method for the host computer to filter the distance measurement data of the cavity based on the rotating motor data and the distance measurement data is conventional in the art and will not be detailed here.

[0093] The graphite disk is rotated at each chamber temperature, and the recess is located with the assistance of the motor signal of the rotating motor. The maximum and minimum distance values ​​in each distance measurement data of a specific recess on the same graphite disk are obtained using a blue light rangefinder. The difference between the maximum and minimum distance values ​​is the jitter difference. The data are shown in Tables 1 and 2 below.

[0094] Table 1

[0095]

[0096] Table 2

[0097]

[0098] As can be seen from Tables 1 and 2, the effects of temperature and rotation speed on the jitter of the substrate support device 100 cannot be ignored, and the depth of the recessed structure 104 must be greater than the jitter difference. During the process, since the substrate 700 is placed in the recess 1021, if the depth of the recessed structure 104 is less than or equal to the jitter difference during the rotation of the substrate support device 100, the jitter of the substrate support device 100 will cause the data measured for the recessed structure 104 to be basically consistent with the data measured for the semiconductor material layer deposited on the substrate 700, or the difference is too small, making the jump signal of the recessed structure 104 insignificant.

[0099] In some embodiments, the machining accuracy of the bottom surface of the recess 1021 used for distance measurement also has a certain impact on the distance measurement of the optical distance measurement device 400. The uneven structure of the bottom surface of the recess 1021 can also cause the distance measurement value to exhibit jitter difference. This influencing factor, along with the jitter difference, should also be taken into consideration when designing the depth of the recessed structure 104.

[0100] In some embodiments, the machining accuracy value of the bottom surface of the cavity 1021 is the absolute value of the maximum machining error value of the height of the bottom surface of the cavity 1021 .

[0101] In some embodiments, the machining accuracy value of the bottom surface of the cavity 1021 is the absolute value of the average machining error value of the height of the bottom surface of the cavity 1021 .

[0102] In some embodiments, the depth of the recessed structure 104 is greater than the sum of the jitter difference and the machining accuracy of the bottom surface of the cavity 1021 .

[0103] In some embodiments, the jitter difference of the substrate supporting device 100 at the process temperature (1000 degrees Celsius) and rotation speed (1000 rpm) is 0.3 mm, the absolute value of the maximum processing error of the height of each point on the bottom surface of the cavity 1021 is 0.5 mm, and the depth of the recessed structure 104 is greater than 0.8 mm.

[0104] In some embodiments, the depth h of the recessed structure 104 is greater than or equal to 1 mm.

[0105] In some embodiments, the depth of the recessed structure 104 does not exceed the cracking threshold. For example, when the material of the substrate carrier 100 is coated graphite, such as silicon carbide coated graphite. If the recessed structure 104 is opened on such a carrier beyond a certain depth, cracks will be generated in the substrate carrier 100. Since graphite has poor wear resistance, graphite powder is easily generated, thereby causing contamination to the substrate 700 or the semiconductor material layer deposited thereon. In addition, the thermal stress generated by the repeated heating and cooling process and pressure changes in the process on such a carrier will cause fatigue damage and rupture failure, so it is necessary to control the depth of the recessed structure 104 not to exceed the cracking threshold. The specific cracking threshold value is an empirical value, which is determined by the material and shape of the substrate carrier 100, the thickness of the part that supports the substrate 700, the opening size of the recessed structure 104 opened thereon, and the temperature and pressure of the deposition process.

[0106] In some embodiments, the rupture threshold of the recessed structure 104 is set to the depth of the cavity 1021 .

[0107] Example 2

[0108] This embodiment also provides a semiconductor equipment process chamber, referring to Figure 11 and 12 , the semiconductor equipment process chamber includes a chamber body (not shown in the figure) and a substrate carrying device 100 arranged on the chamber body. The substrate carrying device 100 is the substrate carrying device 100 in Example 1, and the substrate carrying device 100 is provided with a recessed cavity 1021 and a recessed structure 104, wherein the recessed cavity 1021 is used to carry the substrate. The optical ranging device 400 locates the position of the recessed structure 104 according to the jump signal of the ranging information of the substrate carrying device 100, and subsequently locates the position of the recessed cavity 1021 by using the relative position relationship between the recessed cavity 1021 and the recessed structure 104, to ensure that the optical detection device is turned on at the position corresponding to the recessed cavity 1021. The substrate carrying device 100 is the substrate carrying device 100 in Example 1, and its structure will not be described in detail here.

[0109] Optionally, refer to Figure 11The semiconductor equipment process chamber in this embodiment also includes an optical ranging device 400 and an optical detection device 500. The optical ranging device 400 is arranged in the chamber body, and is arranged opposite to the carrying surface of the substrate supporting device 100, so as to emit a ranging beam to the recessed structure 104 and receive information of the corresponding feedback beam. The optical detection device 500 is also arranged in the chamber body, and is arranged opposite to the carrying surface of the substrate supporting device 100, so as to emit a detection beam to the area where the cavity 1021 is located and receive information of the corresponding feedback beam. When the semiconductor equipment process chamber is working, the substrates 700 are placed one by one in the cavity 1021, and the substrate supporting device 100 rotates under the action of the driving device 600, and the gas of the synthetic thin film material is introduced into the process chamber to deposit a thin film material layer on the substrate. Before detecting the thickness of the thin film material layer deposited on the substrate, the carrying surface of the substrate carrying device 100 is first measured by the optical ranging device 400. After obtaining the jump characteristic information of the recessed structure 104, the position of the recessed structure 104 is determined based on the jump characteristic information, and the opening and closing of the light outlet of the optical detection device 500 for emitting the detection light is controlled in conjunction with the relative position of the recessed structure 104 and the cavity 1021, the substrate carrying device 100, the detection light sampling trajectory 800 information and the rotation speed information, so that the detection light is only turned on when the sampling trajectory 800 passes through the surface of the coated substrate and the corresponding specific wavelength information is obtained.

[0110] When the high-speed carrier device is in a high-temperature environment, for example, when the temperature is above 700°C, the heat medium in the environment (such as high-temperature process gas - not limited to source gas, purge gas, carrier gas) will affect the detection light emitted by the optical ranging device 400 and / or the reflected light of the semiconductor material layer, so that the data obtained by the optical ranging device 400 for measuring the distance at the same position on the substrate carrier device 100 under high temperature and normal temperature environments are different. If the ranging light emitted by the optical ranging device 400 is not properly selected, it will be impossible to obtain valid ranging data. In order to avoid the influence of high temperature on the ranging device, the optical ranging device 400 selected in the process temperature of the process chamber in this embodiment is a blue light ranging device. The blue light ranging device is used to emit a blue light ranging beam to measure the distance of the recessed structure 104, which can avoid the influence of high temperature on the ranging accuracy and improve the accuracy of the test.

[0111] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed in the present invention are intended to be covered by the claims of the present invention.

Claims

1. A substrate carrying device, characterized in that: include: Central region; a carrying area surrounding the central area and provided with at least two recesses arranged at intervals, each recess being used to carry a substrate; The recessed structure is arranged in the spacing area between adjacent recesses, or in the middle area, for distance measurement.

2. The substrate carrying device according to claim 1, wherein: The adjacent recesses are the first recess and the second recess, the spacing area between the first recess and the second recess is the first spacing area, and the spacing area close to the second recess and adjacent to the first spacing area is the second spacing area; the tangent extending from the center of the middle area toward the first spacing area and tangent to the first recess is defined as the first tangent, and the tangent extending from the center of the middle area toward the second spacing area and tangent to the second recess is defined as the second tangent, and the recess structure is arranged in a closed area surrounded by the first tangent, the second tangent and the edge of the middle area.

3. The substrate carrying device according to claim 1, wherein: The adjacent recesses are the first recess and the second recess, the spacing area between the first recess and the second recess is the first spacing area, and the spacing area close to the second recess and adjacent to the first spacing area is the second spacing area; the tangent line extending from the center of the middle area toward the first spacing area and tangent to the first recess is defined as the first tangent line, and the tangent line extending from the center of the middle area toward the first spacing area and tangent to the second recess is defined as the third tangent line. The recessed structure is arranged in a closed area surrounded by the first tangent line, the third tangent line and the edge of the middle area.

4. The substrate carrying device according to claim 1, wherein: The edge of the middle region is tangent to the edge of each of the recesses.

5. The substrate carrying device according to claim 1, wherein: The opening size of the recessed structure is configured to allow the light beam emitted by the distance measuring device to pass through, and the depth of the recessed structure is not less than 1 mm.

6. The substrate carrying device according to claim 1, wherein: The opening size of the recessed structure is not smaller than the bottom size of the recessed structure.

7. The substrate carrying device according to claim 1, wherein: The at least two recesses are evenly arranged around the central region, and the number of the recessed structures is at least 2 and they are arranged around the same circumference.

8. A semiconductor equipment process chamber, characterized in that: include: chamber body; The substrate carrying device according to any one of claims 1 to 7 is arranged in the chamber body, wherein the substrate carrying device is provided with a recess for carrying the substrate and a recessed structure for distance measurement.

9. The semiconductor equipment process chamber according to claim 8, wherein: Also includes: an optical distance measuring device, disposed in the chamber body and opposite to the substrate supporting device, to emit a distance measuring beam toward the recessed structure and receive corresponding feedback beam information; The optical detection device is arranged in the chamber body and is arranged opposite to the substrate supporting device to emit a detection light beam to the area where the cavity is located and receive corresponding feedback light beam information.

10. The semiconductor equipment process chamber according to claim 9, wherein: The optical distance measuring device includes a blue light distance measuring device, and the blue light distance measuring device is used to emit a blue light distance measuring beam.

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