Mask

Abstract

The utility model provides a mask. The first end of the wall surface of the mask is positioned further inward than the second end. The wall surface includes: a first wall surface positioned between the first end and a first imaginary point at which the first imaginary straight line intersects the wall surface; and a second wall surface located between the first imaginary point and the second end. The first imaginary straight line passes through the first end and the second end. The first wall surface includes a portion inside the first imaginary straight line. The wall surface has a second dimension in the in-plane direction of the first surface between the first end and a second imaginary point where the second imaginary straight line and the first surface intersect. The second imaginary straight line passes through the second end and extends in the thickness direction. The first wall surface has a third dimension in the in-plane direction of the first surface between the first imaginary straight line and the third imaginary straight line. The third imaginary straight line is an imaginary straight line extending parallel to the first imaginary straight line and tangent to the first wall surface. The ratio of the third dimension to the second dimension is 0.120 or less.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to masks. Background Art

[0002] Organic devices such as organic EL displays are attracting attention. One known method for forming organic device components is to deposit the component materials onto a substrate using physical film deposition methods such as vapor deposition. A substrate with a first electrode formed in a pattern corresponding to the component is prepared. Next, an organic material is deposited onto the first electrode through through-holes in a mask. The organic material deposited on the first electrode forms an organic layer. Subsequently, a second electrode is formed on the organic layer.

[0003] A known method for manufacturing a mask is to etch a metal plate to form through-holes. This method, for example, includes a first etching step of etching the first surface of the metal plate to form a plurality of first recesses thereon; a step of filling the first recesses with resin; and a second etching step of etching the second surface of the metal plate to form a plurality of second recesses thereon. The second recesses are then connected to the first recesses, thereby forming through-holes that penetrate the metal plate.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2018-111879

[0005] During film formation processes using a mask, the thickness of the layer formed on the substrate decreases at the edges of the layer. This phenomenon is also known as shadowing. Shadowing occurs when a portion of the substrate is obscured by the shadow cast by the through-hole walls of the mask. Utility Model Content

[0006] An object of one embodiment of the present disclosure is to provide a mask that suppresses shadows.

[0007] A mask according to one embodiment of the present disclosure may include a plurality of through holes. The mask may include: a metal plate including a first surface and a second surface located on the opposite side of the first surface in the thickness direction; and a wall surface facing the through hole, including a first end located on the first surface and a second end located on the opposite side of the first end in the thickness direction. The first end may be located more internally than the second end. The wall surface may include: a first wall surface located between a first imaginary point where a first imaginary straight line and the wall surface intersect and the first end; and a second wall surface located between the first imaginary point and the second end. The first imaginary straight line is an imaginary straight line passing through the first end and the second end. The first wall surface may include a portion located more internally than the first imaginary straight line. The wall surface may have a second dimension, which is the distance in the in-plane direction of the first surface between the first end and a second imaginary point where a second imaginary straight line intersects the first surface. The second imaginary straight line is an imaginary straight line that passes through the second end and extends in the thickness direction. The first wall surface may have a third dimension, which is the distance in the in-plane direction of the first surface between the first imaginary straight line and a third imaginary straight line. The third imaginary straight line is an imaginary straight line that extends parallel to the first imaginary straight line and is tangent to the first wall surface. The ratio of the third dimension to the second dimension may be 0.120 or less.

[0008] According to the mask of one embodiment of the present disclosure, shadows can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a plan view showing an example of an organic device.

[0010] Figure 2 It is a plan view showing an example of an element of an organic device.

[0011] Figure 3 It is along Figure 2 Cross-sectional view along line III-III.

[0012] Figure 4 It is a plan view showing an example of an organic device group.

[0013] Figure 5 This is a cross-sectional view showing an example of a vapor deposition device.

[0014] Figure 6 It is a top view showing an example of a mask device.

[0015] Figure 7 It is a top view showing an example of a mask.

[0016] Figure 8It is a perspective view showing an example of a through-hole group.

[0017] Figure 9 It is a cross-sectional view showing an example of a through-hole group.

[0018] Figure 10 This is a plan view showing an example of the through-hole group on the first surface.

[0019] Figure 11 This is a plan view showing an example of the through-hole group on the second surface.

[0020] Figure 12 It is a top view showing an example of the second end.

[0021] Figure 13 It is a diagram showing the observation direction of the cross section of the mask.

[0022] Figure 14A It is a diagram showing an example of a cross section of a mask.

[0023] Figure 14B This is a cross-sectional view showing an example of the first wall surface.

[0024] Figure 14C This is a cross-sectional view showing an example of the first wall surface.

[0025] Figure 15A It is a cross-sectional view showing an example of a vapor deposition process.

[0026] Figure 15B It is a top view showing an example of an organic layer.

[0027] Figure 16 It is a cross-sectional view showing an example of a vapor deposition process.

[0028] Figure 17 This is a diagram showing an example of a mask manufacturing apparatus.

[0029] Figure 18 It is a cross-sectional view showing an example of a resist forming step.

[0030] Figure 19 It is a cross-sectional view showing an example of an exposure process.

[0031] Figure 20 It is a cross-sectional view showing an example of a patterning process.

[0032] Figure 21 It is a top view showing an example of the first resist pattern.

[0033] Figure 22 It is a top view showing an example of the second resist pattern.

[0034] Figure 23This is a cross-sectional view showing an example of the first etching step.

[0035] Figure 24 It is a cross-sectional view showing an example of a filling process.

[0036] Figure 25 It is a cross-sectional view showing an example of the second etching step.

[0037] Figure 26 It is a cross-sectional view showing an example of the second etching step.

[0038] Figure 27 It is a cross-sectional view showing an example of the second etching step.

[0039] Figure 28 It is a cross-sectional view showing an example of the removal step.

[0040] Figure 29 It is a cross-sectional view showing an example of the second etching step.

[0041] Figure 30 This is a cross-sectional view showing an example of a wall surface.

[0042] Figure 31 It is a cross-sectional view showing the second etching step in the first comparative embodiment.

[0043] Figure 32A It is a diagram showing a cross section of a mask in a first comparative embodiment.

[0044] Figure 32B It is a cross-sectional view showing the first wall surface in the first comparative embodiment.

[0045] Figure 33 It is a cross-sectional view showing the second etching step in the second comparative embodiment.

[0046] Figure 34A It is a diagram showing a cross section of a mask in a second comparative embodiment.

[0047] Figure 34B It is a cross-sectional view showing the first wall surface in the second comparative embodiment.

[0048] Figure 35 It is a perspective view showing an example of a through-hole group.

[0049] Figure 36 It is a cross-sectional view showing an example of a through-hole group.

[0050] Figure 37 It is a cross-sectional view showing how a junction portion is formed in the second etching step.

[0051] Figure 38 It is a plan view showing an example of a junction portion at the second end of the wall surface.

[0052] Figure 39 It is a top view showing an example of a through-hole group.

[0053] Figure 40 It is a perspective view showing an example of a through-hole group.

[0054] Figure 41 It is a plan view showing an example of a junction portion at the second end of the wall surface.

[0055] Figure 42 It is a top view showing an example of a through-hole group.

[0056] Figure 43 It is a top view showing an example of a through-hole group.

[0057] Figure 44 A diagram illustrating a method of analyzing a cross-sectional image.

[0058] Figure 45 This is a table showing evaluation results of the masks of Examples A1 to A3.

[0059] Figure 46 This is a table showing evaluation results of the masks of Examples B1 to B3.

[0060] Figure 47A It is a diagram showing a cross section of a mask in a third comparative embodiment.

[0061] Figure 47B It is a cross-sectional view showing the first wall surface in the third comparative embodiment.

[0062] Figure 47C It is a cross-sectional view showing the first wall surface in the third comparative embodiment.

[0063] Figure 48A It is a diagram showing a cross section of a mask in a fourth comparative embodiment.

[0064] Figure 48B It is a cross-sectional view showing the first wall surface in the fourth comparative embodiment.

[0065] Figure 48C It is a cross-sectional view showing the first wall surface in the fourth comparative embodiment.

[0066] Figure 49 This is a diagram showing the overlap of the first wall surface of the mask in one embodiment and the first wall surface of the mask in a fourth comparative embodiment.

[0067] Figure 50 This is a diagram showing the overlap of the first wall surface of the mask in one embodiment and the first wall surface of the mask in a fourth comparative embodiment.

[0068] Figure 51 It is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment.

[0069] Figure 52 It is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment.

[0070] Figure 53 It is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment.

[0071] Figure 54 It is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment.

[0072] Figure 55 It is a diagram showing a cross section of a mask in a fifth comparative embodiment. DETAILED DESCRIPTION

[0073] In this specification and the drawings, unless otherwise specified, terms such as "plate," "sheet," and "film" that mean a material serving as a basis for a certain structure are not distinguished from each other merely by difference in name.

[0074] In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "orthogonal" that determine shapes, geometric conditions and their degrees, or values ​​of lengths and angles, are not strictly restricted in their meanings and are interpreted to include a range of degrees in which the same function can be expected.

[0075] In this specification and the accompanying drawings, unless otherwise specified, references to a structure, such as a component or region, as being "above," "below," "upper side," or "lower side," or "above," or "below," of another component or region, or other structure, include the following: References to a structure being directly connected to another structure include references to another structure being located between the structure and the other structure, i.e., indirect contact. Furthermore, references to "above," "upper side," or "above," or "lower," "lower side," or "below," may reverse the up-down direction unless otherwise specified.

[0076] In this specification and the drawings, unless otherwise specified, identical parts or parts having identical functions are denoted by identical or similar reference numerals, and duplicate descriptions thereof may be omitted. Furthermore, for ease of description, dimensional ratios in the drawings may differ from actual ratios, and portions of structures may be omitted from the drawings.

[0077] In this specification and the drawings, unless otherwise specified, one embodiment of this specification can be combined with other embodiments within the scope of no contradiction. Furthermore, other embodiments can also be combined with each other within the scope of no contradiction.

[0078] In this specification and the accompanying drawings, unless otherwise specified, when two or more steps or processes are disclosed in connection with a method such as a manufacturing method, other undisclosed steps or processes may be implemented between the disclosed steps or processes. Furthermore, the order of the disclosed steps or processes is arbitrary to the extent that no contradiction arises.

[0079] In this specification and the accompanying drawings, unless otherwise specified, numerical ranges expressed using the symbol "to" include the numerical values ​​placed before and after the symbol "to". For example, a numerical range defined by the expression "34 to 38 mass %" is the same as a numerical range defined by the expression "34 mass % or more and 38 mass % or less".

[0080] In one embodiment of the present specification, the following example is described: a mask is used to form an organic layer or electrode on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment can also be used to form a component of a device that displays or projects images or videos for representing virtual reality (so-called VR) or augmented reality (so-called AR). For example, the mask of this embodiment can also be used to form components of display devices other than organic EL display devices, such as electrodes of liquid crystal display devices. For example, the mask of this embodiment can also be used to form components of devices other than display devices, such as electrodes of pressure sensors.

[0081] The first embodiment of the present disclosure is a mask comprising a plurality of through holes, characterized in that the mask comprises: a metal plate comprising a first surface and a second surface located opposite to the first surface in a thickness direction; and a wall surface facing the through holes, comprising a first end located on the first surface and a second end located opposite to the first end in the thickness direction, the first end being located closer to the inside than the second end, the wall surface comprising: a first wall surface located between a first imaginary point where a first imaginary straight line and the wall surface intersect and the first end; and a second wall surface located between the first imaginary point and the second end, the first imaginary straight line being an imaginary straight line passing through the first end and the second end, the first imaginary straight line The wall surface includes a portion located more inward than the first imaginary straight line, the wall surface has a second dimension, the second dimension is the distance in the in-plane direction of the first surface between the first end and a second imaginary point where the second imaginary straight line intersects the first surface, the second imaginary straight line is an imaginary straight line passing through the second end and extending in the thickness direction, the first wall surface has a third dimension, the third dimension is the distance in the in-plane direction of the first surface between the first imaginary straight line and a third imaginary straight line, the third imaginary straight line is an imaginary straight line extending parallel to the first imaginary straight line and tangent to the first wall surface, and the ratio of the third dimension to the second dimension is 0.120 or less.

[0082] A second aspect of the present disclosure may be the mask of the first aspect, further comprising the following configuration: A ratio of the third dimension to the second dimension may be 0.030 or greater.

[0083] A third aspect of the present disclosure may be the mask of the first or second aspect, wherein the mask has the following configuration: A third imaginary point, which is a point where the third imaginary straight line is tangent to the first wall surface, may be located outside the first end.

[0084] A fourth aspect of the present disclosure may be the mask according to any one of the first to third aspects, wherein the wall surface may have a reference height, the reference height being the distance between the first end and the second end in the thickness direction, and the ratio of the second dimension to the reference height may be 1.00 or less.

[0085] A fifth aspect of the present disclosure may be the mask of the third or fourth aspect, further comprising the following configuration: the first wall surface may include an eleventh wall surface located between the third imaginary point and the first end, and a twelfth wall surface located between the third imaginary point and the first imaginary point; the eleventh wall surface may include a portion located inward of a seventh imaginary straight line; and the seventh imaginary straight line may be an imaginary straight line passing through the first end and the third imaginary point.

[0086] A sixth aspect of the present disclosure may be the mask of the fifth aspect, further comprising the following configuration: the twelfth wall surface may include a 3A2 imaginary point; the 3A2 imaginary point may be an imaginary point where the 3A imaginary straight line intersects the twelfth wall surface; the 3A imaginary straight line may be an imaginary straight line obtained by offsetting the third imaginary straight line inward by a first allowable error; the first allowable error may be 0.10 μm; and the ratio of the distance in the thickness direction between the third imaginary point and the 3A2 imaginary point to the first allowable error may be 1.0 or greater.

[0087] A seventh aspect of the present disclosure may be the mask according to any one of the first to sixth aspects, wherein the mask has the following structure: The wall surface may have a third height, the third height being the distance in the thickness direction between the first end and a third imaginary point, the third imaginary point being the point at which the third imaginary straight line is tangent to the first wall surface; and the ratio of the third dimension to the third height may be 1.00 or less.

[0088] An eighth aspect of the present disclosure may be the mask of any one of the first to seventh aspects, further comprising the following configuration: the plurality of through-holes may be arranged in the first and second directions in a plan view, and the second and third dimensions may be determined in a cross section of the mask taken along a plane inclined at a 45-degree angle with respect to the first direction.

[0089] A ninth aspect of the present disclosure may be the mask of any one of the first to eighth aspects, wherein the second end may include two 21st sides facing each other in the second direction, or each of the two 21st sides may include a straight portion.

[0090] A tenth aspect of the present disclosure may be the mask of the ninth aspect, wherein the plurality of through-holes may include a first through-hole and a second through-hole adjacent to the first through-hole in the second direction, and the 21st side of the first through-hole may merge with the 21st side of the first through-hole.

[0091] An eleventh aspect of the present disclosure may be the mask of the tenth aspect, wherein the mask has the following structure: the wall surface may have a confluence height, the confluence height being the distance in the thickness direction between the first end and a confluence portion, wherein the confluence portion is a confluence portion where the twenty-first side of the first through-hole and the twenty-first side of the first through-hole merge, and the ratio of the confluence height to the thickness of the metal plate may be greater than or equal to 0.50.

[0092] A twelfth aspect of the present disclosure may be the mask of any one of the first to eleventh aspects, wherein the second end may include two 22nd sides facing each other in the first direction, or each of the two 22nd sides may include a straight portion.

[0093] A thirteenth aspect of the present disclosure may be the mask of the twelfth aspect, wherein the plurality of through-holes may include a first through-hole and a third through-hole adjacent to the first through-hole in the first direction, and the 22nd side of the first through-hole may merge with the 22nd side of the third through-hole.

[0094] The 14th embodiment of the present disclosure is a method for manufacturing a mask, wherein the mask includes a plurality of through holes, and is characterized in that the method for manufacturing the mask comprises: a process for preparing a metal plate, wherein the metal plate includes a first surface and a second surface located on the opposite side of the first surface in the thickness direction; a resist pattern forming process, wherein a first resist pattern is formed on the first surface of the metal plate and a second resist pattern is formed on the second surface of the metal plate; a first etching process, wherein a plurality of first recesses are formed on the first surface by etching the first surface; a filling process, wherein a resin is filled in the first recesses; and a second etching process, wherein a plurality of second recesses are formed on the second surface by etching the second surface, wherein in the second etching process, the plurality of second recesses are respectively connected to the corresponding first recesses, and in the second etching process, a groove is formed between the metal plate and the resin.

[0095] A fifteenth aspect of the present disclosure may be the mask manufacturing method according to the fourteenth aspect, further comprising the following configuration: In the second etching step, the surface of the resin may be dissolved in the etching solution.

[0096] A sixteenth aspect of the present disclosure may include the following structure in the mask manufacturing method of the fourteenth aspect or the fifteenth aspect. It may be that the mask includes a wall surface facing the through hole, the wall surface includes: a first end located on the first surface; and a second end located on the opposite side of the first end in the thickness direction, the first end may be located more inner than the second end, the wall surface includes: a first wall surface located between the first end and a first imaginary point where a first imaginary straight line and the wall surface intersect, and a second wall surface located between the first imaginary point and the second end, the first imaginary straight line may be an imaginary straight line passing through the first end and the second end, the first wall surface includes a portion located more inner than the first imaginary straight line, the point where a third imaginary straight line is tangent to the first wall surface, i.e., the third imaginary point, does not touch the resin, and the third imaginary straight line may be an imaginary straight line extending parallel to the first imaginary straight line and tangent to the first wall surface.

[0097] A seventeenth aspect of the present disclosure may be the mask manufacturing method of the sixteenth aspect, further comprising the following configuration: A distance between the third imaginary point and the resin in the in-plane direction of the first surface may be 0.5 μm or more.

[0098] An eighteenth aspect of the present disclosure may be the mask manufacturing method according to the sixteenth or seventeenth aspect, further comprising the following configuration: The third imaginary point may be located outside the first end.

[0099] A nineteenth aspect of the present disclosure may be the mask manufacturing method according to any one of the fourteenth to eighteenth aspects, wherein the second surface may include a rib located between two adjacent through-holes in a plan view, and the rib may be a portion of the second surface that is not etched in the second etching step.

[0100] A 20th aspect of the present disclosure may be the method for manufacturing a mask according to any one of the 16th to 18th aspects, wherein the method comprises the following structure: the plurality of through-holes may be arranged in the first and second directions in a plan view; the second end may include two 21st sides opposing each other in the second direction; the plurality of through-holes may include a first through-hole and a second through-hole adjacent to the first through-hole in the second direction; one of the 21st sides of the first through-hole may merge with one of the 21st sides of the first through-hole; the wall surface may have a merging height, which is the distance in the thickness direction between the first end and a merging portion, wherein the merging portion is a merging portion where one of the 21st sides of the first through-hole merges with one of the 21st sides of the first through-hole; and the ratio of the merging height to the thickness of the metal plate may be 0.50 or greater.

[0101] One embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. The embodiments described below are examples of the present disclosure, and the present disclosure is not limited to these embodiments.

[0102] The organic device 100 will be described. The organic device 100 includes an organic layer or an electrode formed by using a mask. Figure 1 1 is a plan view showing an example of the organic device 100 when viewed along the normal direction of the substrate of the organic device 100. In the following description, viewing along the normal direction of the surface of a base material such as a substrate is also referred to as a plan view.

[0103] The organic device 100 includes a substrate and a plurality of elements 115 arranged along the in-plane direction of the substrate. The elements 115 are, for example, pixels. Figure 2 1 is an enlarged top view of the organic device 100. The elements 115 may also be arranged in two different directions. Figure 3 It is along Figure 2 Cross-sectional view along line III-III.

[0104] The organic device 100 may include a substrate 110, a plurality of first electrodes 120, a plurality of organic layers 130, and a second electrode 140. The substrate 110 includes a first surface 111 and a second surface 112. The second surface 112 is located on the opposite side of the first surface 111.

[0105] Multiple first electrodes 120 may be located on the first surface 111. Multiple organic layers 130 may be located on the first electrodes 120. The second electrode 140 may be located on the organic layer 130. The second electrode 140 may also extend so as to overlap with the multiple first electrodes 120 when viewed from above. The element 115 is composed of a stacked structure including the first electrodes 120, the organic layers 130, and the second electrode 140. By applying a voltage between the first electrode 120 and the second electrode 140, or by flowing a current between the first electrode 120 and the second electrode 140, the element 115 can achieve a certain function.

[0106] The organic device 100 may be an active matrix device. For example, although not shown, the organic device 100 may include switches electrically connected to each of the plurality of elements 115. The switches are, for example, transistors. The switches can control the voltage applied to the elements 115 or the current flowing through the elements 115.

[0107] like Figure 2 and Figure 3 As shown, the plurality of organic layers 130 may include a plurality of first organic layers 130A, a plurality of second organic layers 130B, and a plurality of third organic layers 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. When describing the common structure of the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C, the term "organic layer 130" and the reference numeral are used.

[0108] like Figure 2 and Figure 3 As shown, the plurality of first electrodes 120 may include a plurality of 1A electrodes 120A, a plurality of 1B electrodes 120B, and a plurality of 1C electrodes 120C. The 1A electrodes 120A overlap with the first organic layer 130A in a plan view. The 1B electrodes 120B overlap with the second organic layer 130B in a plan view. The 1C electrodes 120C overlap with the third organic layer 130C in a plan view. When describing the structure common to the 1A electrodes 120A, the 1B electrodes 120B, and the 1C electrodes 120C, the term "first electrode 120" and reference numerals are used.

[0109] An element 115 may include at least one first sub-element 115A, at least one second sub-element 115B, and at least one third sub-element 115C. The first sub-element 115A includes a 1A electrode 120A, a first organic layer 130A, and a second electrode 140. The second sub-element 115B includes a 1B electrode 120B, a second organic layer 130B, and a second electrode 140. The third sub-element 115C includes a 1C electrode 120C, a third organic layer 130C, and a second electrode 140. Figure 2 In the example shown, one element 115 includes one first sub-element 115A, one second sub-element 115B, and two third sub-elements 115C.

[0110] The element formed by using a mask may be the organic layer 130 or the second electrode 140. The element formed by using a mask is also referred to as a vapor deposition layer.

[0111] The organic device 100 may include an insulating layer 160 positioned between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may include, for example, polyimide. The insulating layer 160 may overlap with an end portion of the first electrode 120 in a plan view.

[0112] The constituent elements of the organic device 100 will be described in detail.

[0113] Substrate 110 may also be a plate-shaped component with insulating properties. Substrate 110 preferably has transparency to allow light to pass through. Materials for substrate 110 include, for example, inflexible rigid materials such as quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, or flexible materials such as resin films, optical resin plates, and thin glass. Substrate 110 may be a laminate having a barrier layer on one or both sides of a resin film.

[0114] Element 115 is configured to achieve a certain function by applying a voltage between first electrode 120 and second electrode 140 or by flowing a current between first electrode 120 and second electrode 140. For example, if element 115 is a pixel of an organic EL display device, element 115 emits light that forms an image.

[0115] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0116] The organic layer 130 comprises an organic material. When electricity is applied to the organic layer 130, it can perform certain functions. "Electrification" refers to applying a voltage to the organic layer 130 or flowing a current through the organic layer 130. The organic layer 130 can be a light-emitting layer that emits light when electricity is applied. The organic layer 130 can comprise an organic semiconductor material. The properties of the organic layer 130, such as its transmittance and refractive index, can be adjusted as appropriate.

[0117] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0118] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

[0119] The second electrode 140 includes a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by an evaporation method using a mask. As materials constituting the second electrode 140, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, etc. can be used. These materials can be used alone or in combination of two or more. When using two or more materials, layers composed of each material can also be stacked. In addition, alloys containing two or more materials can also be used. For example, magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg can be used. MgAg is also called magnesium silver. Magnesium silver is preferably used as the material of the second electrode 140. Alkali metal and alkaline earth metal alloys can also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc. can also be used.

[0120] The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of another element 115 .

[0121] like Figure 2 and Figure 3 As shown, the second electrode 140 may be extended so as to overlap with the plurality of first electrodes 120. For example, the second electrode 140 may be extended over the entire display region of the organic device 100 in a plan view.

[0122] In the method for manufacturing the organic device 100, it is possible to make Figure 4 The organic device group 102 shown in FIG. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged in the x-direction Dx and the y-direction Dy. The y-direction Dy is perpendicular to the x-direction Dx. The two or more organic devices 100 may share a single substrate 110. For example, the organic device group 102 may be located on a single substrate 110 and include layers such as the first electrode 120, the organic layer 130, and the second electrode 140 that constitute the two or more organic devices 100. The organic devices 100 are obtained by dividing the organic device group 102.

[0123] The x direction Dx may be the longitudinal direction of a mask described later.

[0124] Next, a method of forming a vapor deposition layer such as the organic layer 130 by vapor deposition will be described. Figure 5 1 is a diagram showing a vapor deposition apparatus 10 . The vapor deposition apparatus 10 performs a vapor deposition process for vapor-depositing a vapor deposition material on a substrate 110 .

[0125] like Figure 5 As shown, the evaporation device 10 may also include an evaporation source 6, a heater 8, and a mask device 15 therein. Furthermore, the evaporation device 10 may further include an exhaust unit for creating a vacuum atmosphere inside the evaporation device 10. The evaporation source 6 is, for example, a crucible, and contains a evaporation material 7 such as an organic material or a metal material. The heater 8 heats the evaporation source 6, causing the evaporation material 7 to evaporate in a vacuum atmosphere. The mask device 15 is arranged so as to face the crucible 6.

[0126] like Figure 5 As shown, the mask device 15 includes at least one mask 50. The mask device 15 may also include a mask support 40 that supports the mask 50. The mask support 40 may also include a frame 41 including an opening 43. The mask 50 may be fixed to the frame 41 so as to cross the opening 43 when viewed from above. The frame 41 may also support the mask 50 in a stretched state in the direction of its surface to prevent the mask 50 from bending.

[0127] like Figure 5 As shown, the mask device 15 is arranged in the vapor deposition device 10 so that the mask 50 faces the first surface 111 of the substrate 110. The mask 50 includes a plurality of through holes 56 for allowing the vapor deposition material 7 flying from the vapor deposition source 6 to pass. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as the first surface 551. The surface of the mask 50 located on the opposite side of the first surface 551 in the thickness direction of the mask 50 is referred to as the second surface 552.

[0128] like Figure 5 As shown, the evaporation device 10 may also include a substrate holder 2 for holding the substrate 110. The substrate holder 2 may also be capable of moving in the thickness direction of the substrate 110. The substrate holder 2 may also be capable of moving in the surface direction of the substrate 110. The substrate holder 2 may also be configured to control the inclination of the substrate 110. For example, the substrate holder 2 may also include a plurality of chucks mounted on the outer edge of the substrate 110. Each chuck may also be capable of independently moving in the thickness direction or the surface direction of the substrate 110.

[0129] By moving at least one of the substrate holder 2 and the mask holder 3 , the position of the mask 50 relative to the substrate 110 can be adjusted.

[0130] like Figure 5As shown, the vapor deposition apparatus 10 may also include a cooling plate 4 disposed on the second surface 112 side of the substrate 110. The cooling plate 4 may also have a flow path for circulating a refrigerant inside the cooling plate 4. The cooling plate 4 can suppress the temperature increase of the substrate 110 during the vapor deposition process.

[0131] like Figure 5 As shown, the evaporation device 10 may also include a magnet 5 arranged on the second surface 112 side of the substrate 110. The magnet 5 may also be arranged on the surface of the cooling plate 4 away from the substrate 110. The magnet 5 can attract the mask 50 to the substrate 110 side by magnetic force. In this way, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. In this way, the generation of shadows in the evaporation process can be suppressed. The shape of the evaporation layer is the thickness of the evaporation layer, the size of the evaporation layer when viewed from above, etc. An electrostatic chuck using electrostatic force can also be used to attract the mask 50 to the substrate 110 side.

[0132] Figure 6 This is a top view of the mask apparatus 15 as viewed from the first surface 551. The mask apparatus 15 may include a mask support 40 including a frame 41 and a mask 50 fixed to the frame 41. The mask apparatus 15 may include two or more masks 50 arranged in the y-direction Dy. To prevent deflection of the mask 50, the frame 41 supports the mask 50 while applying tension to the mask 50 in the x-direction Dx.

[0133] The frame 41 may include a pair of first sides 411 extending in the x-direction Dx, a pair of second sides 412 extending in the y-direction Dy, and an opening 43. The second sides 412 may be longer than the first sides 411. The pair of first sides 411 and the pair of second sides 412 are in contact with the opening 43 when viewed from above.

[0134] The mask 50 may include a first side edge 501 and a second side edge 502 extending in the x-direction Dx, and a first end 503 and a second end 504. The first end 503 and the second end 504 are ends of the mask 50 in the x-direction Dx.

[0135] In a plan view, the mask 50 includes a first end portion 51a, a second end portion 51b, and an intermediate portion 52. The first end portion 51a and the second end portion 51b face each other in the x-direction Dx. The intermediate portion 52 is located between the first end portion 51a and the second end portion 51b. The intermediate portion 52 includes a group of through-holes 53.

[0136] “Viewed from above” means observing the object along the thickness direction of the mask 50 .

[0137] The mask 50 is fixed to the second side 412. Specifically, the first end 51a is fixed to the first second side 412, and the second end 51b is fixed to the second second side 412. The first end 51a and the second end 51b may be fixed to the first second side 412 and the second second side 412 by welding. The middle portion 52 overlaps with the opening 43 of the frame 41 in a plan view.

[0138] Figure 7 is a top view showing an example of a mask 50. The through-hole group 53 in the middle portion 52 includes a plurality of through-holes 56 regularly arranged in a top view. The through-holes 56 may also be periodically arranged in two directions. For example, the through-holes 56 may be periodically arranged in the x-direction Dx and the y-direction Dy.

[0139] One through-hole group 53 corresponds to one organic device 100. For example, the plurality of first organic layers 130A included in one organic device 100 are formed of a vapor-deposited material that passes through the plurality of through-holes 56 of one through-hole group 53. The mask 50 includes at least one through-hole group 53. The mask 50 may also include two or more through-hole groups 53 arranged in the x-direction Dx.

[0140] The mask 50 will be described in detail. Figure 8 This is a perspective view showing an example of the through-hole group 53 on the second surface 552 of the mask 50 . Figure 9 1 is a cross-sectional view showing an example of the through-hole group 53 . Figure 9 It is along Figure 8 A cross-sectional view taken along line IX-IX.

[0141] The mask 50 includes a metal plate 55. The metal plate 55 includes a first surface 551 and a second surface 552. Each through-hole 56 of the through-hole group 53 penetrates from the first surface 551 to the second surface 552.

[0142] The mask 50 includes a plurality of wall surfaces 57. The plurality of wall surfaces 57 respectively face the through-hole 56. The wall surfaces 57 are generated by forming the through-hole 56 in the metal plate 55. The wall surface 57 includes a first end 58 and a second end 59. The first end 58 may be located on the first surface 551. The first end 58 may also constitute the outline of the through-hole 56 in a top view of the first surface 551 of the mask 50. The second end 59 is located on the opposite side of the first end 58 in the thickness direction Et. The thickness direction Et is a direction perpendicular to the first surface 551. The second end 59 may also constitute the outline of the through-hole 56 in a top view of the second surface 552 of the mask 50. The second end 59 may also surround the first end 58 when viewed from above. The second end 59 may also be located on the second surface 552.

[0143] In this specification, the term "first surface 551" used with respect to the mask 50 refers to the area of ​​the first surface 551 of the metal plate 55 that is not etched by the first etching step described later. In this specification, the term "second surface 552" used with respect to the mask 50 refers to the area of ​​the second surface 552 of the metal plate 55 that is not etched by the second etching step described later.

[0144] like Figure 8 and Figure 9 As shown, the second surface 552 of the mask 50 may also include a rib 553. The rib 553 is a region of the second surface 552 located between two adjacent through-holes 56 when viewed from above. The rib 553 is produced by leaving the region of the second surface 552 located between the two through-holes 56 without being etched in the second etching step described later.

[0145] The first end 58 may be located further inward than the second end 59. "Inward" refers to the side closer to the center point C3 of the through hole 56 in a plan view. "Outward" described below refers to the side farther from the center point C3 of the through hole 56 in a plan view.

[0146] The materials for the metal plate 55 and frame 41 will now be described. An iron alloy containing nickel can be used as the primary material for the mask 50 and frame 41. This reduces the difference in thermal expansion coefficient between the mask 50 and frame 41 and the glass substrate 110. This prevents degradation of the dimensional accuracy or positional accuracy of the deposited layer formed on the substrate 110 due to thermal expansion of the mask 50, frame 41, substrate 110, and the like.

[0147] The nickel content in the ferroalloy may be, for example, 28% by mass or more, 30% by mass or more, or 34% by mass or more. The nickel content in the ferroalloy may be, for example, 38% by mass or less, 44% by mass or less, or 54% by mass or less. The range of the nickel content in the ferroalloy may be determined by the first group consisting of 28% by mass, 30% by mass, and 34% by mass and / or the second group consisting of 38% by mass, 44% by mass, and 54% by mass. The range of the nickel content in the ferroalloy may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the nickel content in the ferroalloy may be determined by a combination of any two of the values ​​included in the first group. The range of the nickel content in the ferroalloy may be determined by a combination of any two of the values ​​included in the second group. The nickel content in the iron alloy can be, for example, 28 mass % or more and 54 mass % or less, 28 mass % or more and 44 mass % or less, 28 mass % or more and 38 mass % or less, 28 mass % or more and 34 mass % or more, 28 mass % or more and 30 mass % or less, 30 mass % or more and 54 mass % or less, 30 mass % or more and 44 mass % or more, 30 mass % or more and 38 mass % or less, 30 mass % or more and 34 mass % or more, 34 mass % or more and 54 mass % or less, 34 mass % or more and 44 mass % or more, 34 mass % or more and 38 mass % or less, 38 mass % or more and 54 mass % or less, 38 mass % or more and 44 mass % or more, 44 mass % or more and 54 mass % or less.

[0148] The iron alloy may contain cobalt in addition to nickel. For example, as the material of the metal plate 55 of the mask 50, an iron alloy having a total nickel and cobalt content of 28% to 54% by mass and a cobalt content of 0% to 6% by mass may be used.

[0149] The total content of nickel and cobalt in the metal plate 55 can be 28% to 38% by mass. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include Invar, Super Invar, and Super Invar. Invar is an iron alloy containing 34% to 38% by mass of nickel, with the remainder being iron and unavoidable impurities. Super Invar is an iron alloy containing 30% to 34% by mass of nickel and cobalt, with the remainder being iron and unavoidable impurities. Super Invar is an iron alloy containing 28% to 34% by mass of nickel, 2% to 7% by mass of cobalt, 0.1% to 1.0% by mass of manganese, 0.10% to 0.1% by mass of silicon, 0.01% to 0.01% by mass of carbon, with the remainder being iron and unavoidable impurities.

[0150] During the vapor deposition process, if the temperatures of the mask 50, frame 41, and substrate 110 do not reach a high temperature, it is not particularly necessary to make the thermal expansion coefficients of the mask 50 and frame 41 equal to the thermal expansion coefficient of the substrate 110. In this case, materials other than the above-mentioned iron alloys can be used as the material constituting the metal plate 55. For example, iron alloys other than the above-mentioned iron alloys containing nickel, such as iron alloys containing chromium, can also be used. As the iron alloy containing chromium, for example, an iron alloy called stainless steel can be used. In addition, alloys other than iron alloys, such as nickel and nickel-cobalt alloys, can also be used.

[0151] The mask 50 has a thickness T0. The thickness T0 is the distance between the first surface 551 and the second surface 552 in the thickness direction Et. The thickness T0 may be, for example, 8 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T0 may be, for example, 25 μm or less, 30 μm or less, 50 μm or less, or 80 μm or less. The range of the thickness T0 may be determined by the first group consisting of 8 μm, 10 μm, 15 μm, and 20 μm and / or the second group consisting of 25 μm, 30 μm, 50 μm, and 80 μm. The range of the thickness T0 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T0 may also be determined by a combination of any two of the values ​​included in the first group. The range of the thickness T0 may also be determined by a combination of any two of the values ​​included in the second group. The thickness T0 may be, for example, 8 μm or more and 80 μm or less, 8 μm or more and 50 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 80 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 80 μm or less, The thickness T0 of the mask 50 may be greater than or equal to 15 μm and less than 50 μm, greater than or equal to 15 μm and less than 30 μm, greater than or equal to 15 μm and less than 25 μm, greater than or equal to 15 μm and less than 20 μm, greater than or equal to 20 μm and less than 80 μm, greater than or equal to 20 μm and less than 50 μm, greater than or equal to 20 μm and less than 30 μm, greater than or equal to 20 μm and less than 25 μm, greater than or equal to 25 μm and less than 80 μm, greater than or equal to 25 μm and less than 50 μm, greater than or equal to 25 μm and less than 30 μm, greater than or equal to 30 μm and less than 80 μm, greater than or equal to 30 μm and less than 50 μm, or greater than or equal to 50 μm and less than 80 μm. The thickness T0 of the mask 50 may also be the thickness of the metal plate 55.

[0152] By setting the thickness T0 to 80 μm or less, the deposition material 7 can be prevented from adhering to the wall surface 57 of the through-hole 56 before passing through the through-hole 56. This improves the utilization efficiency of the deposition material 7. Furthermore, by setting the thickness T0 to 8 μm or more, the strength of the mask 50 can be ensured, and damage and deformation of the mask 50 can be suppressed.

[0153] A contact measurement method was used to measure the thickness T0. Specifically, the thickness T0 was measured using a high-precision digital length measuring instrument, Litematic VL-50S, manufactured by Mitutoyo Corporation.

[0154] Figure 10 It is a plan view showing an example of the through-hole group 53 in the first surface 551 . Figure 11 This is a top view showing an example of the through-hole group 53 in the second surface 552. The plurality of through-holes 56 in the through-hole group 53 may be arranged in the first direction E1 and the second direction E2. The second direction E2 is a direction different from the first direction E1. The second direction E2 may also be a direction orthogonal to the first direction E1.

[0155] The first direction E1 and the second direction E2 are determined based on the arrangement pitch of the plurality of second ends 59. The first direction E1 and the second direction E2 are two directions in which the arrangement pitch of the plurality of second ends 59 becomes the smallest. Figure 11 As shown, the plurality of second ends 59 are arranged at a first pitch P21 in the first direction E1. In the second direction E2, the plurality of second ends 59 are arranged at a second pitch P22. The first pitch P21 and the second pitch P22 are smaller than the arrangement pitch of the plurality of second ends 59 in directions other than the first direction E1 and the second direction E2. For example, the first pitch P21 and the second pitch P22 are smaller than the arrangement pitch of the plurality of second ends 59 in the third direction E3 and the fourth direction E4. The plurality of second ends 59 are also arranged in the third direction E3 and the fourth direction E4. The third direction E3 and the fourth direction E4 are inclined relative to the first direction E1 and the second direction E2. The inclination angle of the third direction E3 relative to the first direction E1 may also be 45 degrees. The inclination angle of the fourth direction E4 relative to the second direction E2 may also be 45 degrees.

[0156] The first pitch P21 and the second pitch P22 are determined according to the distribution density of the vapor-deposited layer formed on the substrate 110. The first pitch P21 and the second pitch P22 may be, for example, greater than 15 μm, greater than 30 μm, or greater than 60 μm. The first pitch P21 and the second pitch P22 may be, for example, less than 100 μm, less than 150 μm, or less than 250 μm. The range of the first pitch P21 and the second pitch P22 may also be determined by the first group consisting of 15 μm, 30 μm, and 60 μm and / or the second group consisting of 100 μm, 150 μm, and 250 μm. The range of the first pitch P21 and the second pitch P22 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the first pitch P21 and the second pitch P22 may also be determined by a combination of any two of the values ​​included in the first group. The ranges of the first pitch P21 and the second pitch P22 may also be determined by a combination of any two of the values ​​included in the second group described above. The first pitch P21 and the second pitch P22 can be, for example, greater than 15 μm and less than 250 μm, greater than 15 μm and less than 150 μm, greater than 15 μm and less than 100 μm, greater than 15 μm and less than 60 μm, greater than 15 μm and less than 30 μm, greater than 30 μm and less than 250 μm, greater than 30 μm and less than 150 μm, greater than 30 μm and less than 100 μm, greater than 30 μm and less than 60 μm, greater than 60 μm and less than 250 μm, greater than 60 μm and less than 150 μm, greater than 60 μm and less than 100 μm, greater than 100 μm and less than 250 μm, greater than 100 μm and less than 150 μm, greater than 150 μm and less than 250 μm.

[0157] like Figure 10 As shown, the plurality of first ends 58 may be arranged in the first direction E1 and the second direction E2.

[0158] like Figure 10 As shown, each of the plurality of first ends 58 may include two 11th sides 581. The two 11th sides 581 are opposed in the second direction E2. Each of the plurality of first ends 58 may include two 12th sides 582. The two 12th sides 582 are opposed in the first direction E1. The first end 58 may also be composed of two 11th sides 581 and two 12th sides 582.

[0159] The 11th side 581 has a dimension R11. Dimension R11 is the maximum distance between the two 12th sides 582 in the first direction E1. The 12th side 582 has a dimension R12. Dimension R12 is the maximum distance between the two 11th sides 581 in the second direction E2.

[0160] Each of the two 11th sides 581 may include a straight portion extending linearly. The straight portion of the 11th side 581 may extend in the first direction E1. The straight portion of the 11th side 581 has a length R11s.

[0161] The ratio of the length R11s to the dimension R11, i.e., R11s / R11, can be, for example, greater than 0.10, greater than 0.30, or greater than 0.50. R11s / R11 can be, for example, less than 0.80, less than 1.10, or less than 1.50. The range of R11s / R11 can also be determined by the first group consisting of 0.10, 0.30, and 0.50 and / or the second group consisting of 0.80, 1.10, and 1.50. The range of R11s / R11 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of R11s / R11 can also be determined by a combination of any two of the values ​​included in the first group. The range of R11s / R11 can also be determined by a combination of any two of the values ​​included in the second group. R11s / R11 may be, for example, 0.10 or more and 1.50 or less, 0.10 or more and 1.10 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.50 or less, 0.10 or more and 0.30 or less, 0.30 or more and 1.50 or less, 0.30 or more and 1.10 or less, 0.30 or more and 0.80 or less, 0.30 or more and 0.50 or less, 0.50 or more and 1.50 or less, 0.50 or more and 1.10 or less, 0.50 or more and 0.80 or less, 0.80 or more and 1.50 or less, 0.80 or more and 1.10 or less, or 1.10 or more and 1.50 or less.

[0162] Each of the two twelfth sides 582 may include a straight portion extending linearly. The straight portion of the twelfth side 582 may extend in the second direction E2. The straight portion of the twelfth side 582 has a length R12s.

[0163] The numerical range of the ratio of the length R12s to the dimension R12, ie, R12s / R12, may be the same as the numerical range described above regarding R11s / R11.

[0164] The 11th side 581 and the 12th side 582 may be connected. The portion of the first end 58 where the 11th side 581 and the 12th side 582 are connected may be bent.

[0165] The size R11 and the size R12 are determined according to the size of the vapor-deposited layer formed on the substrate 110. The size R11 and the size R12 may be, for example, 10 μm or more, 25 μm or more, or 50 μm or more. The size R11 and the size R12 may be, for example, 80 μm or less, 110 μm or less, or 150 μm or less. The range of the size R11 and the size R12 may be determined by the first group consisting of 10 μm, 25 μm, and 50 μm and / or the second group consisting of 80 μm, 110 μm, and 150 μm. The range of the size R11 and the size R12 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the size R11 and the size R12 may also be determined by a combination of any two of the values ​​included in the first group. The range of the size R11 and the size R12 may also be determined by a combination of any two of the values ​​included in the second group. The size R11 and the size R12 can be, for example, greater than 10 μm and less than 150 μm, greater than 10 μm and less than 110 μm, greater than 10 μm and less than 80 μm, greater than 10 μm and less than 50 μm, greater than 10 μm and less than 25 μm, greater than 25 μm and less than 150 μm, greater than 25 μm and less than 110 μm, greater than 25 μm and less than 80 μm, greater than 25 μm and less than 50 μm, greater than 50 μm and less than 150 μm, greater than 50 μm and less than 110 μm, greater than 50 μm and less than 80 μm, greater than 80 μm and less than 150 μm, greater than 80 μm and less than 110 μm, and greater than 110 μm and less than 150 μm.

[0166] The dimensions of the components appearing on the first surface 551, such as dimensions R11 and R12, are calculated by observing the through-hole group 53 on the first surface 551. The dimensions of the components appearing on the second surface 552, such as the first pitch P21 and the second pitch P22, are calculated by observing the through-hole group 53 on the second surface 552. A measuring instrument was used, AMIC-2500 manufactured by Shinto S Precision Co., Ltd.

[0167] Dimensions R11 and R12 are each calculated by averaging ten measured values ​​calculated based on the region of first surface 551 corresponding to ten through-holes 56. First pitch P21 and second pitch P22 are each calculated by averaging ten measured values ​​calculated based on the region of second surface 552 corresponding to ten through-holes 56. Ten through-holes 56 are extracted in the same manner as in the case of the cross-sectional shape observation method of mask 50 described later.

[0168] like Figure 11 As shown, each of the plurality of second ends 59 may include two 21st sides 591. The two 21st sides 591 are opposed in the second direction E2. Each of the plurality of second ends 59 may include two 22nd sides 592. The two 22nd sides 592 are opposed in the first direction E1. The second end 59 may also be composed of two 21st sides 591 and two 22nd sides 592.

[0169] The 21st side 591 has a dimension R21. Dimension R21 is the maximum distance between the two 22nd sides 592 in the first direction E1. The 22nd side 592 has a dimension R22. Dimension R22 is the maximum distance between the two 21st sides 591 in the second direction E2.

[0170] The two 21st sides 591 may each include a straight portion extending linearly. The straight portion of the 21st side 591 may extend in the first direction E1. The straight portion of the 21st side 591 has a length R21s.

[0171] The numerical range of the ratio of the length R21s to the dimension R21, ie, R21s / R21, may be the same as the numerical range described above regarding R11s / R11.

[0172] The two 22nd sides 592 may each include a straight portion extending linearly. The straight portion of the 22nd side 592 may also extend in the second direction E2. The straight portion of the 22nd side 592 has a length R22s.

[0173] The numerical range of the ratio of the length R22s to the dimension R22, ie, R12s / R12, may be the same as the numerical range described above regarding R11s / R11.

[0174] The 21st side 591 and the 22nd side 592 may be connected. The portion of the second end 59 where the 21st side 591 and the 22nd side 592 are connected may be bent.

[0175] like Figure 11As shown, the rib 553 on the second surface 552 may include a portion located between two second ends 59 adjacent to each other in the first direction E1. The rib 553 on the second surface 552 may include a portion located between two second ends 59 adjacent to each other in the second direction E2. The rib 553 on the second surface 552 may include a portion located between two second ends 59 adjacent to each other in the third direction E3. The portion of the rib 553 located between two second ends 59 adjacent to each other in the third direction E3 may also be located between two second ends 59 adjacent to each other in the fourth direction E4.

[0176] The straight portions of the first end 58 and the second end 59 will be described. Figure 12 It is a plan view showing an example of the second end 59 .

[0177] The straight portion of the 21st side 591 is the portion of the 21st side 591 located between a straight line SL1 extending in the first direction E1 and a straight line SL2 extending parallel to the straight line SL1. The straight line SL1 is located outside the 21st side 591 and in contact with the 21st side 591. The straight line SL2 is located inside the straight line SL1. The distance between the straight lines SL1 and SL2 in the second direction E2 is ΔR1. In other words, the straight line SL2 is located inside the straight line SL1 and is separated from the straight line SL1 by ΔR1 in the second direction E2. The distance ΔR1 is 3.0 μm.

[0178] The straight portion of the 22nd side 592 is the portion of the 22nd side 592 located between a straight line SL3 extending in the second direction E2 and a straight line SL4 extending parallel to the straight line SL3. The straight line SL3 is located outside the 22nd side 592 and in contact with the 22nd side 592. The straight line SL4 is located inside the straight line SL3. The distance between the straight lines SL3 and SL4 in the first direction E1 is ΔR1. In other words, the straight line SL4 is located inside the straight line SL3 and is separated from the straight line SL3 by ΔR1 in the first direction E1.

[0179] Although not shown, the straight portion of the 11th side 581 at the first end 58 is defined similarly to the straight portion of the 21st side 591 at the second end 59. Specifically, the straight portion of the 11th side 581 is the portion of the 11th side 581 located between two straight lines extending in the first direction E1. The interval between the two straight lines is ΔR1.

[0180] Although not shown, the straight portion of the 12th side 582 at the first end 58 is defined similarly to the straight portion of the 22nd side 592 at the second end 59. Specifically, the straight portion of the 12th side 582 is the portion of the 12th side 582 located between two straight lines extending in the second direction E2. The distance between the two straight lines is ΔR1.

[0181] Next, the cross-sectional shape of the mask 50 will be described. Figure 13 This figure shows the viewing direction of a cross section of mask 50. The second and third dimensions, etc., described below, are determined in the cross section of mask 50 cut along plane Lm. Plane Lm is inclined at a 45-degree angle relative to first direction E1 and is perpendicular to first plane 551 and second plane 552. Plane Lm passes through the connection between 21st side 591 and 22nd side 592.

[0182] The cross-sectional shape of the mask 50 is observed around the 10 through holes 56. The 10 through holes 56 are extracted from the through hole group 53 closest to the center point C1 of the mask 50 in the x-direction Dx. The 10 through holes 56 include one through hole 56 closest to the center point C2 of the through hole group 53 when viewed from above. This one through hole 56 is also called the center through hole. The 10 through holes 56 include the center through hole and are arranged along the direction of the surface Lm. The center point C1 and the center point C2 are also in Figure 7 Shown in.

[0183] The ten cross sections of the mask 50 are obtained by cutting the mask 50 along a plane Lm passing through the intersection Cm. The intersection Cm is a point where a straight line L1, which is tangent to the 21st side 591 and extends in the first direction E1, intersects a straight line L2, which is tangent to the 22nd side 592 and extends in the second direction E2.

[0184] Four intersection points are generated when the second end 59 includes two 21st sides 591 and two 22nd sides 592. The intersection point Cm through which the surface Lm passes is selected so that the distance between the intersection point Cm and the second end 59 is minimized.

[0185] Figure 14A is a diagram showing an example of a cross section of the mask 50 cut along the plane Lm. The wall surface 57 of the mask 50 may also include a first wall surface 571 and a second wall surface 572. The first wall surface 571 is the portion of the wall surface 57 located between the first imaginary point P11 and the first end 58 in the thickness direction Et. The first wall surface 571 may also be located inward of the first imaginary straight line L11. The first wall surface 571 may also have a curved shape that protrudes inward. The second wall surface 572 is the portion of the wall surface 57 located between the first imaginary point P11 and the second end 59 in the thickness direction Et. The second wall surface 572 may also be located outward of the first imaginary straight line L11. The second wall surface 572 may also have a curved shape that protrudes outward.

[0186] The first imaginary straight line L11 is an imaginary straight line passing through the first end 58 and the second end 59 in the cross-sectional view of the mask 50. The first imaginary point P11 is an imaginary point where the first imaginary straight line L11 intersects the wall surface 57 in the cross-sectional view of the mask 50.

[0187] Wall surface 57 may also have a reference height H10. Reference height H10 is the distance between first end 58 and second end 59 in the thickness direction Et in a cross-sectional view of mask 50. When first end 58 is located on first surface 551 and second end 59 is located on second surface 552, reference height H10 is equal to thickness T0 of mask 50.

[0188] The wall surface 57 may also have a second dimension S12. The second dimension S12 is the distance in the in-plane direction of the first surface 551 between the second imaginary point P12 and the first end 58 in the cross-sectional view of the mask 50. The second imaginary point P12 is the imaginary point where the second imaginary line L12 intersects the first surface 551 in the cross-sectional view of the mask 50. The second imaginary line L12 is an imaginary line that passes through the second end 59 in the cross-sectional view of the mask 50 and extends in the thickness direction Et.

[0189] The design value of the second dimension S12 is determined based on the first inclination angle θ1. The first inclination angle θ1 is the inclination angle of the first imaginary straight line L11 relative to the thickness direction Et. In the vapor deposition process using the mask 50, a portion of the vapor deposition material flying toward the substrate 110 moves in a direction inclined relative to the thickness direction Et. The vapor deposition material moving in a direction inclined relative to the thickness direction Et is also called an inclined component. The larger the first inclination angle θ1 is, the more it is possible to suppress the area of ​​the substrate 110 from being obscured by the shadow of the wall 57 in the direction of movement of the inclined component. That is, the shadow of the mask 50 is suppressed.

[0190] On the other hand, a large first inclination angle θ1 means a large second dimension S12 of the wall surface 57. When the size of the first end 58 is fixed, the larger the second dimension S12 is, the smaller the size of the rib 553 is. For example, the area of ​​the rib 553 is reduced. The smaller the area of ​​the rib 553 is, the lower the strength of the mask 50 is. If the strength of the mask 50 is reduced, defects such as breakage and deformation are likely to occur in the mask 50. For example, it is conceivable that when tension is applied to the mask 50 in the x-direction Dx, local deformation will occur at the connection portion of the second end 59 where the 21st side 591 and the 22nd side 592 are connected. Therefore, it is preferable to determine an appropriate upper limit for the first inclination angle θ1. That is, it is preferable to determine an appropriate upper limit for the ratio of the second dimension S12 to the reference height H10, that is, S12 / H10.

[0191] S12 / H10 can be, for example, greater than 0.50, greater than 0.60, or greater than 0.70. S12 / H10 can be, for example, less than 0.90, less than 1.05, or less than 1.15. The range of S12 / H10 can also be determined by the first group consisting of 0.50, 0.60, and 0.70 and / or the second group consisting of 0.90, 1.05, and 1.15. The range of S12 / H10 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S12 / H10 can also be determined by a combination of any two of the values ​​included in the first group. The range of S12 / H10 can also be determined by a combination of any two of the values ​​included in the second group. S12 / H10 can be, for example, greater than 0.50 and less than 1.15, greater than 0.50 and less than 1.05, greater than 0.50 and less than 0.90, greater than 0.50 and less than 0.70, greater than 0.50 and less than 0.60, greater than 0.60 and less than 1.15, greater than 0.60 and less than 1.05, greater than 0.60 and less than 0.90, greater than 0.60 and less than 0.70, greater than 0.70 and less than 1.15, greater than 0.70 and less than 1.05, greater than 0.70 and less than 0.90, greater than 0.90 and less than 1.15, greater than 0.90 and less than 1.05, and greater than 1.15.

[0192] like Figure 14A As shown, the wall surface 57 may also have a third dimension S13. The third dimension S13 is the distance between the first imaginary straight line L11 and the third imaginary straight line L13 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The third imaginary straight line L13 is an imaginary straight line that extends parallel to the first imaginary straight line L11 in the cross-sectional view of the mask 50 and is tangent to the first wall surface 571. The third imaginary straight line L13 is located inside the first wall surface 571.

[0193] The third dimension S13 may be, for example, greater than 0.50 μm, greater than 1.00 μm, or greater than 1.50 μm. The third dimension S13 may be, for example, less than 3.00 μm, less than 3.50 μm, or less than 4.00 μm. The range of the third dimension S13 may also be determined by the first group consisting of 0.50 μm, 1.00 μm, and 1.50 μm and / or the second group consisting of 3.00 μm, 3.50 μm, and 4.00 μm. The range of the third dimension S13 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the third dimension S13 may also be determined by a combination of any two of the values ​​included in the first group. The range of the third dimension S13 may also be determined by a combination of any two of the values ​​included in the second group. The third size S13 may be, for example, 0.50 μm or more and 4.00 μm or less, 0.50 μm or more and 3.50 μm or less, 0.50 μm or more and 3.00 μm or less, 0.50 μm or more and 1.50 μm or less, 0.50 μm or more and 1.00 μm or less, 1.00 μm or more and 4.00 μm or less, 1.00 μm or more and 3.50 μm or less, or 1.0 0μm or more and 3.00μm or less, may be 1.00μm or more and 1.50μm or less, may be 1.50μm or more and 4.00μm or less, may be 1.50μm or more and 3.50μm or less, may be 1.50μm or more and 3.00μm or less, may be 3.00μm or more and 4.00μm or less, may be 3.00μm or more and 3.50μm or less, may be 3.50μm or more and 4.00μm or less.

[0194] The ratio of the third dimension S13 to the second dimension S12, i.e., S13 / S12, can be, for example, greater than 0.010, greater than 0.020, greater than 0.030, or greater than 0.050. S13 / S12 can be, for example, less than 0.080, less than 0.100, less than 0.120, or less than 0.140. The range of S13 / S12 can also be determined by the first group consisting of 0.010, 0.020, 0.030, and 0.050 and / or the second group consisting of 0.080, 0.100, 0.120, and 0.140. The range of S13 / S12 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S13 / S12 can also be determined by a combination of any two of the values ​​included in the first group. The range of S13 / S12 can also be determined by combining any two of the values ​​included in the second group mentioned above. For example, S13 / S12 can be 0.010 or more and 0.140 or less, 0.010 or more and 0.120 or less, 0.010 or more and 0.100 or less, 0.010 or more and 0.080 or less, 0.010 or more and 0.050 or less, 0.010 or more and 0.030 or less, 0.010 or more and 0.020 or less, 0.020 or more and 0.140 or less, 0.020 or more and 0.120 or less, 0.020 or more and 0.100 or less, 0.020 or more and 0.080 or less, 0.020 or more and 0.050 or less, 0.020 or more and 0.030 or less, or 0.030 or more and 0.1 40 or less, may be 0.030 or more and 0.120 or less, may be 0.030 or more and 0.100 or less, may be 0.030 or more and 0.080 or less, may be 0.030 or more and 0.050 or less, may be 0.050 or more and 0.140 or less, may be 0.050 or more and 0.120 or less, may be 0.050 or more and 0.100 or less, may be 0.050 or more and 0.080 or less, may be 0.080 or more and 0.140 or less, may be 0.080 or more and 0.120 or less, may be 0.080 or more and 0.100 or less, may be 0.100 or more and 0.140 or less, may be 0.100 or more and 0.120 or less, may be 0.120 or more and 0.140 or less.

[0195] An example of the effect achieved by controlling S13 / S12 will be described. Figure 15AThis is a cross-sectional view illustrating an example of a vapor deposition process. The organic material passing through through-holes 56 of mask 50 adheres to substrate 110, thereby forming organic layer 130. Organic layer 130 includes, for example, a central portion 131 and end portions 132. End portions 132 are located outside central portion 131 in a plan view.

[0196] The boundary between the central portion 131 and the end portion 132 in a plan view is denoted by reference numeral 133 .

[0197] exist Figure 15A In FIG. 5 , reference numeral F11 denotes a path that is in contact with the second end 59 and is inclined at a first inclination angle θ1 relative to the thickness direction Et. Path F11 overlaps with the first imaginary straight line L11. Reference numeral F13 denotes a path that is tangential to the first wall surface 571 and is inclined at the first inclination angle θ1 relative to the thickness direction Et. Path F13 overlaps with the third imaginary straight line L13. The end portion 132 of the organic layer 130 is located outside of path F13.

[0198] The organic material moving in the direction of the first inclination angle θ1 in the space between the paths F11 and F13 does not adhere to the substrate 110 but adheres to the mask 50 . Therefore, the thickness of the end portion 132 is smaller than that of the central portion 131 .

[0199] The third dimension S13 of the wall surface 57 corresponds to the distance between the paths F11 and F13. As the third dimension S13 decreases, the width W1 of the end portion 132 also decreases. In the mask 50 of this embodiment, since the third dimension S13 is reduced, the width W1 of the end portion 132 is also reduced. In other words, the mask 50 of this embodiment can suppress shadows.

[0200] As described above, the second dimension S12 of the wall surface 57 is a parameter set to suppress the shadow cast by the mask 50 in exchange for reducing the strength of the mask 50. However, it is conceivable that even if the second dimension S12 is set sufficiently large, the shadow cast by the mask 50 cannot be sufficiently suppressed if the third dimension S13 is large.

[0201] On the other hand, if the third dimension S13 is too small, the strength of the mask 50 at the first end 58 may be too weak. The smaller the third dimension S13 is, the smaller the angle between the first wall surface 571 and the first surface 551 at the first end 58 becomes, making it easier for the first wall surface 571 to break, such as cracks.

[0202] According to the mask 50 of the present embodiment, by controlling S13 / S12 , it is possible to suppress shadows of the mask 50 while maintaining the strength of the mask 50 .

[0203] As the third dimension S13 decreases, the angle formed between the first wall surface 571 and the first surface 551 at the first end 58 decreases. Consequently, dimensional variations due to variations in the etching amount are more likely to occur. For example, variations in dimensions R11 and R12 are more likely to occur. Setting a lower limit for S13 / S12 is also useful in suppressing variations in dimensions R11 and R12.

[0204] The position of the path F13 in the in-plane direction of the first surface 551 may also affect the position of the boundary 133 between the central portion 131 and the end portion 132. Figure 15A As shown, the boundary 133 may also be located on or near the path F13. The higher the position accuracy of the path F13, the higher the position accuracy of the boundary 133. That is, the higher the position accuracy of the path F13, the higher the position accuracy of the organic layer 130.

[0205] The position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is affected by the position of the third imaginary point P13. The position of the third imaginary point P13 in the thickness direction Et is affected by the first etching step and the second etching step described later. For example, the position of the third imaginary point P13 in the thickness direction Et varies due to variations in the etching depth in the first etching step and variations in the etching depth in the second etching step. In order to improve the positional accuracy of the organic layer 130 in the in-plane direction of the first surface 551, it is preferable that the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is less susceptible to the position of the third imaginary point P13 in the thickness direction Et.

[0206] like Figure 14A As shown, the wall surface 57 may also have a third height H13. The third height H13 is the distance between the first end 58 and the third imaginary point P13 in the thickness direction Et in the cross-sectional view of the mask 50. The third imaginary point P13 is the imaginary point where the third imaginary straight line L13 is tangent to the wall surface 57 in the cross-sectional view of the mask 50.

[0207] like Figure 14A As shown, the third imaginary point P13 may be located outside the first end 58. That is, in the in-plane direction of the first surface 551, the third imaginary point P13 may be located farther from the center point of the through-hole 56 than the first end 58. By locating the third imaginary point P13 outside the first end 58, shadows can be suppressed.

[0208] The ratio of the third dimension S13 to the third height H13, i.e., S13 / H13, can be, for example, greater than 0.30, greater than 0.50, greater than 0.60, or greater than 0.70. S13 / H13 can be, for example, less than 0.80, less than 1.20, less than 1.50, or less than 2.50. The range of S13 / H13 can be determined by the first group consisting of 0.30, 0.50, 0.60, and 0.70 and / or the second group consisting of 0.80, 1.20, 1.50, and 2.50. The range of S13 / H13 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S13 / H13 can also be determined by a combination of any two of the values ​​included in the first group. The range of S13 / H13 can also be determined by a combination of any two of the values ​​included in the second group. S13 / H13 may be, for example, 0.30 or more and 2.50 or less, 0.30 or more and 1.50 or less, 0.30 or more and 1.20 or less, 0.30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, 0.30 or more and 0.50 or less, 0.50 or more and 2.50 or less, 0.50 or more and 1.50 or less, 0.50 or more and 1.20 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.70 or less, 0.50 or more and 0.60 or less, or 0.60 or more and 2.50 or less. 50 or less, can be 0.60 or more and 1.50 or less, can be 0.60 or more and 1.20 or less, can be 0.60 or more and 0.80 or less, can be 0.60 or more and 0.70 or less, can be 0.70 or more and 2.50 or less, can be 0.70 or more and 1.50 or less, can be 0.70 or more and 1.20 or less, can be 0.70 or more and 0.80 or less, can be 0.80 or more and 2.50 or less, can be 0.80 or more and 1.50 or less, can be 0.80 or more and 1.20 or less, can be 1.20 or more and 2.50 or less, can be 1.20 or more and 1.50 or less, can be 1.50 or more and 2.50 or less.

[0209] An example of the effect achieved by controlling S13 / H13 will be described. Figure 16 : is a cross-sectional view showing an example of the vapor deposition process. Figure 16 In FIG, reference numeral F12 denotes a path inclined at a second inclination angle θ2 with respect to the thickness direction Et. The second inclination angle θ2 is smaller than the first inclination angle θ1.

[0210] The higher the probability that the organic material moving along the path F12 reaches the substrate 110, the smaller the width W1 of the end portion 132. In the mask 50 of this embodiment, since S13 / H13 is reduced, the probability of reaching the substrate 110 is improved.

[0211] like Figure 14A As shown, the wall surface 57 may also have a fourth dimension S14. The fourth dimension S14 is the distance between the first imaginary straight line L11 and the fourth imaginary straight line L14 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The fourth imaginary straight line L14 is an imaginary straight line that extends parallel to the first imaginary straight line L11 in the cross-sectional view of the mask 50 and is tangent to the second wall surface 572. The fourth imaginary straight line L14 is located outside the second wall surface 572.

[0212] Even when the fourth dimension S14 is zero, the adhesion of the material moving at the first inclination angle θ1 to the substrate 110 is not hindered by the second wall surface 572. From the perspective of the strength of the mask 50, a smaller fourth dimension S14 is preferable. As described later, the mask 50 of this embodiment can achieve both a reduction in the fourth dimension S14 and a reduction in the third dimension S13 compared to the mask of the second comparative embodiment.

[0213] The ratio of the fourth dimension S14 to the second dimension S12, i.e., S14 / S12, can be, for example, greater than 0.020, greater than 0.050, or greater than 0.100. S14 / S12 can be, for example, less than 0.150, less than 0.200, or less than 0.250. The range of S14 / S12 can also be determined by the first group consisting of 0.020, 0.050, and 0.100 and / or the second group consisting of 0.150, 0.200, and 0.250. The range of S14 / S12 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S14 / S12 can also be determined by a combination of any two of the values ​​included in the first group. The range of S14 / S12 can also be determined by a combination of any two of the values ​​included in the second group. S14 / S12 can be, for example, 0.020 or more and 0.250 or less, 0.020 or more and 0.200 or less, 0.020 or more and 0.150 or less, 0.020 or more and 0.100 or less, 0.020 or more and 0.050 or less, 0.050 or more and 0.250 or less, 0.050 or more and 0.200 or less, 0.050 or more and 0.150 or less, 0.050 or more and 0.100 or less, 0.100 or more and 0.250 or less, 0.100 or more and 0.200 or less, 0.100 or more and 0.150 or less, 0.150 or more and 0.250 or less, 0.150 or more and 0.200 or less, or 0.200 or more and 0.250 or less.

[0214] The third dimension S13 mentioned above may also be smaller than the fourth dimension S14. The ratio of the third dimension S13 to the fourth dimension S14, i.e., S13 / S14, may be, for example, greater than 0.10, greater than 0.20, or greater than 0.40. S13 / S14 may be, for example, less than 0.60, less than 0.80, or less than 1.00. The range of S13 / S14 may also be determined by the first group consisting of 0.10, 0.20, and 0.40 and / or the second group consisting of 0.60, 0.80, and 1.00. The range of S13 / S14 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S13 / S14 may also be determined by a combination of any two of the values ​​included in the first group. The range of S13 / S14 may also be determined by a combination of any two of the values ​​included in the second group. S13 / S14 can be, for example, greater than 0.10 and less than 1.00, greater than 0.10 and less than 0.80, greater than 0.10 and less than 0.60, greater than 0.10 and less than 0.40, greater than 0.10 and less than 0.20, greater than 0.20 and less than 1.00, greater than 0.20 and less than 0.80, greater than 0.20 and less than 0.60, greater than 0.20 and less than 0.40, greater than 0.40 and less than 1.00, greater than 0.40 and less than 0.80, greater than 0.40 and less than 0.60, greater than 0.60 and less than 1.00, greater than 0.60 and less than 0.80, and greater than 0.80 and less than 1.00.

[0215] Figure 14B 1 is a diagram illustrating an example of the first wall surface 571 of the mask 50 cut along the plane Lm. The first wall surface 571 may also include an eleventh wall surface 5711 and a twelfth wall surface 5712. The eleventh wall surface 5711 is the portion of the first wall surface 571 located between the third imaginary point P13 and the first end 58 in the thickness direction Et. The twelfth wall surface 5712 is the portion of the first wall surface 571 located between the third imaginary point P13 and the first imaginary point P11 in the thickness direction Et.

[0216] The 11th wall surface 5711 may be at least partially located inward of the 7th imaginary line L17. The 11th wall surface 5711 may be located entirely inward of the 7th imaginary line L17. The 11th wall surface 5711 may have a curved shape that protrudes inward from the 7th imaginary line L17. The 7th imaginary line L17 is an imaginary line that passes through the first end 58 and the 3rd imaginary point P13 in the cross-sectional view of the mask 50.

[0217] like Figure 14B As shown, the first wall surface 571 may also have an eighth dimension S18. The eighth dimension S18 is the distance in the in-plane direction of the first surface 551 between the seventh imaginary straight line L17 and the eighth imaginary point P18 in the cross-sectional view of the mask 50. The eighth imaginary point P18 is the imaginary point where the eighth imaginary straight line L18 is tangent to the eleventh wall surface 5711 in the cross-sectional view of the mask 50. The eighth imaginary straight line L18 is an imaginary straight line extending parallel to the seventh imaginary straight line L17 and tangent to the eleventh wall surface 5711 in the cross-sectional view of the mask 50. In the embodiment of the present disclosure, the eighth imaginary straight line L18 and the eighth imaginary point P18 are located inside the seventh imaginary straight line L17. In the embodiment of the present disclosure, the eighth imaginary straight line L18 is located inside the eleventh wall surface 5711.

[0218] Along Figure 15A The organic material moving along the path F13 shown does not reach the 11th wall surface 5711. The 11th wall surface 5711 is located inside the 7th imaginary straight line L17. This allows the thickness of the mask 50 around the first end 58 to be increased compared to the case where the 11th wall surface 5711 is located outside the 7th imaginary straight line L17. Therefore, in order to improve the strength of the mask 50, it is preferable to make the 8th dimension S18 larger. However, it is conceivable that if the 8th dimension S18 is smaller than the 7th imaginary straight line L17, the mask 50 will have a larger thickness. Figure 14B The third imaginary straight line L13 is larger than the state of Figure 14B The vicinity of the eighth imaginary point P18 is tangent to the wall surface 57. Therefore, the eighth dimension S18 has an upper limit.

[0219] The eighth dimension S18 may be, for example, greater than 0.10 μm, greater than 0.20 μm, or greater than 0.40 μm. The eighth dimension S18 may be, for example, less than 0.80 μm, less than 1.10 μm, or less than 1.50 μm. The range of the eighth dimension S18 may also be determined by the first group consisting of 0.10 μm, 0.20 μm, and 0.40 μm and / or the second group consisting of 0.80 μm, 1.10 μm, and 1.50 μm. The range of the eighth dimension S18 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the eighth dimension S18 may also be determined by a combination of any two of the values ​​included in the first group. The range of the eighth dimension S18 may also be determined by a combination of any two of the values ​​included in the second group. The eighth size S18 may be, for example, 0.10 μm or more and 1.50 μm or less, 0.10 μm or more and 1.10 μm or less, 0.10 μm or more and 0.80 μm or less, 0.10 μm or more and 0.40 μm or less, 0.10 μm or more and 0.20 μm or less, 0.20 μm or more and 1.50 μm or less, 0.20 μm or more and 1.10 μm or less, or 0.2 0μm or more and 0.80μm or less, may be 0.20μm or more and 0.40μm or less, may be 0.40μm or more and 1.50μm or less, may be 0.40μm or more and 1.10μm or less, may be 0.40μm or more and 0.80μm or less, may be 0.80μm or more and 1.50μm or less, may be 0.80μm or more and 1.10μm or less, may be 1.10μm or more and 1.50μm or less.

[0220] The ratio of the eighth dimension S18 to the second dimension S12, i.e., S18 / S12, can be, for example, greater than 0.002, greater than 0.004, greater than 0.006, or greater than 0.010. S18 / S12 can be, for example, less than 0.015, less than 0.020, less than 0.030, or less than 0.050. The range of S18 / S12 can be determined by the first group consisting of 0.002, 0.004, 0.006, and 0.010 and / or the second group consisting of 0.015, 0.020, 0.030, and 0.050. The range of S18 / S12 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S18 / S12 can also be determined by a combination of any two of the values ​​included in the first group. The range of S18 / S12 can also be determined by combining any two of the values ​​included in the second group. For example, S18 / S12 may be 0.002 or more and 0.050 or less, 0.002 or more and 0.030 or less, 0.002 or more and 0.020 or less, 0.002 or more and 0.015 or less, 0.002 or more and 0.010 or less, 0.002 or more and 0.006 or less, 0.002 or more and 0.004 or less, 0.004 or more and 0.050 or less, 0.004 or more and 0.030 or less, 0.004 or more and 0.020 or less, 0.004 or more and 0.015 or less, 0.004 or more and 0.010 or less, 0.004 or more and 0.006 or less, or 0.006 or more and 0.007 or more. 50 or less, may be 0.006 or more and 0.030 or less, may be 0.006 or more and 0.020 or less, may be 0.006 or more and 0.015 or less, may be 0.006 or more and 0.010 or less, may be 0.010 or more and 0.050 or less, may be 0.010 or more and 0.030 or less, may be 0.010 or more and 0.020 or less, may be 0.010 or more and 0.015 or less, may be 0.015 or more and 0.050 or less, may be 0.015 or more and 0.030 or less, may be 0.015 or more and 0.020 or less, may be 0.020 or more and 0.050 or less, may be 0.020 or more and 0.030 or less, may be 0.030 or more and 0.050 or less.

[0221] The twelfth wall surface 5712 may be at least partially located outside the seventh imaginary straight line L17. The entire twelfth wall surface 5712 may be located outside the seventh imaginary straight line L17.

[0222] Figure 14C 1 is a diagram showing an example of the first wall surface 571 of the mask 50 cut along the plane Lm. The first wall surface 571 may include the 3A1-th imaginary point P13A1 and the 3A2-th imaginary point P13A2.

[0223] The 3A1 imaginary point P13A1 is the imaginary point where the 3A imaginary straight line L13A intersects the 11th wall surface 5711 in the cross-sectional view of the mask 50. The 3A2 imaginary point P13A2 is the imaginary point where the 3A imaginary straight line L13A intersects the 12th wall surface 5712 in the cross-sectional view of the mask 50. The 3A imaginary straight line L13A is an imaginary straight line located inward of the third imaginary straight line L13 in the cross-sectional view of the mask 50 and extending parallel to the third imaginary straight line L13. The distance between the third imaginary straight line L13 and the 3A imaginary straight line L13A in the in-plane direction of the first surface 551 is represented by the symbol ΔSA. In other words, the 3A imaginary straight line L13A is an imaginary straight line obtained by offsetting the third imaginary straight line L13 inward by a distance ΔSA.

[0224] Reference numeral TA1 represents the distance between the third imaginary point P13 and the 3A1 imaginary point P13A1 in the thickness direction Et. The position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 fluctuates depending on the position of the third imaginary point P13. The position of the third imaginary point P13 in the thickness direction Et fluctuates due to variations in the etching depth in the first etching step and variations in the etching depth in the second etching step. The greater the distance TA1, the less the effect of variations in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551. In other words, the greater the distance TA1, the slower the fluctuation in the position of the third imaginary straight line L13 relative to the position of the third imaginary point P13 in the thickness direction Et becomes. Distance TA1 can serve as an indicator for suppressing variations in the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551. Therefore, the distance TA1 can serve as an indicator for suppressing positional variations of the organic layer 130 in the in-plane direction of the first surface 551. The greater the distance TA1, the more the positional variations of the organic layer 130 in the in-plane direction of the first surface 551 can be suppressed.

[0225] Reference symbol TA2 denotes the distance between the third imaginary point P13 and the 3A2 imaginary point P13A2 in the thickness direction Et. Distance TA2 can also serve as an indicator for suppressing positional variation of the third imaginary straight line L13 in the in-plane direction of the first surface 551. Therefore, distance TA2 can also serve as an indicator for suppressing positional variation of the organic layer 130 in the in-plane direction of the first surface 551. The greater the distance TA2, the more it can suppress positional variation of the organic layer 130 in the in-plane direction of the first surface 551.

[0226] In this embodiment, the direction in which the first wall surface 571 extends changes gently and continuously near the third imaginary point P13. For example, in a cross-sectional view of the mask, the directions in which the tangent line to the first wall surface 571 and the tangent line to the twelfth wall surface 5712 extend change continuously across the third imaginary point P13. Consequently, a relatively large distance TA1 and distance TA2 can be achieved.

[0227] The distance ΔSA is determined according to the positional accuracy required for the organic layer 130. The distance ΔSA may be 0.10 μm, 0.20 μm, 0.30 μm, 0.50 μm, 0.70 μm, or 1.00 μm. The distance ΔSA is also called a first allowable error.

[0228] The distance TA1 is preferably sufficiently large relative to the distance ΔSA. The larger the distance TA1 is, the more the influence of the deviation in etching depth on the positional accuracy of the organic layer 130 is suppressed. The ratio of the distance TA1 to the distance ΔSA, i.e., TA1 / ΔSA, can be, for example, greater than 2.5, greater than 3.0, or greater than 3.5. TA1 / ΔSA can be, for example, less than 4.0, less than 5.0, or less than 6.0. The range of TA1 / ΔSA can be determined by the first group consisting of 2.5, 3.0, and 3.5 and / or the second group consisting of 4.0, 5.0, and 6.0. The range of TA1 / ΔSA can also be determined by a combination of any one of the values ​​included in the above-mentioned first group and any one of the values ​​included in the above-mentioned second group. The range of TA1 / ΔSA can also be determined by a combination of any two of the values ​​included in the above-mentioned first group. The range of TA1 / ΔSA can also be determined by a combination of any two of the values ​​included in the above-mentioned second group. TA1 / ΔSA can be, for example, greater than 2.5 and less than 6.0, greater than 2.5 and less than 5.0, greater than 2.5 and less than 4.0, greater than 2.5 and less than 3.5, greater than 2.5 and less than 3.0, greater than 3.0 and less than 6.0, greater than 3.0 and less than 5.0, greater than 3.0 and less than 4.0, greater than 3.0 and less than 3.5, greater than 3.5 and less than 6.0, greater than 3.5 and less than 5.0, greater than 3.5 and less than 4.0, greater than 4.0 and less than 6.0, greater than 4.0 and less than 5.0, or greater than 5.0 and less than 6.0.

[0229] As with the distance TA1, the distance TA2 is preferably sufficiently large relative to the distance ΔSA. The ratio of the distance TA2 to the distance ΔSA, i.e., TA2 / ΔSA, can be, for example, greater than 1.0, greater than 1.5, or greater than 2.0. TA2 / ΔSA can be, for example, less than 4.0, less than 5.0, or less than 6.0. The range of TA2 / ΔSA can be determined by the first group consisting of 1.0, 1.5, and 2.0 and / or the second group consisting of 4.0, 5.0, and 6.0. The range of TA2 / ΔSA can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of TA2 / ΔSA can be determined by a combination of any two of the values ​​included in the first group. The range of TA2 / ΔSA can be determined by a combination of any two of the values ​​included in the second group. TA2 / ΔSA can be, for example, greater than 1.0 and less than 6.0, greater than 1.0 and less than 5.0, greater than 1.0 and less than 4.0, greater than 1.0 and less than 2.0, greater than 1.0 and less than 1.5, greater than 1.5 and less than 6.0, greater than 1.5 and less than 5.0, greater than 1.5 and less than 4.0, greater than 1.5 and less than 2.0, greater than 2.0 and less than 6.0, greater than 2.0 and less than 5.0, greater than 2.0 and less than 4.0, greater than 4.0 and less than 6.0, greater than 4.0 and less than 5.0, or greater than 5.0 and less than 6.0.

[0230] Figure 15B This is a top view showing an example of an organic layer 130 formed by a vapor deposition process. The position of elements of the organic layer 130, such as the boundary 133, varies depending on the position of the third imaginary line L13 in the in-plane direction of the first surface 551. In this embodiment, by increasing the distances TA1 and TA2, the influence of variations in the etching depth on the positional accuracy of the third imaginary line L13 can be suppressed.

[0231] If the position of the third imaginary point P13 in the thickness direction Et of a through-hole 56 of the mask 50 changes, the position of the organic layer 130 in a plan view also changes. For example, if the position of the third imaginary point P13 in the thickness direction Et changes, the position of the boundary 133 or the outer edge 134 of the organic layer 130 in a plan view also changes. For example, it is believed that the change in the position of the third imaginary point P13 in the thickness direction Et reduces the linearity of a portion of the outline of the boundary 133 that should be a straight line in a plan view.

[0232] In this embodiment, by increasing the distances TA1 and TA2, the effect of variations in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, even if the position of the third imaginary point P13 in the thickness direction Et varies within a single through-hole 56 of the mask 50, the contour of the boundary 133 can be maintained linear when viewed from above. Consequently, this embodiment can improve the positional accuracy of the organic layer 130.

[0233] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 are calculated based on a cross-sectional image of a sample of the mask 50. The sample of the mask 50 is produced by cutting the mask 50 along the plane Lm. The cross-sectional image of the sample is obtained by observing the cross section of the sample using a digital microscope. The dimensions of the wall surface 57 are calculated by averaging the measured values ​​obtained around the ten through-holes 56 described above.

[0234] Next, a method of manufacturing the mask 50 will be described. Figure 17 1 is a diagram showing a manufacturing apparatus 70 for manufacturing the mask 50. The manufacturing apparatus 70 includes a resist forming apparatus 71, an exposure apparatus 72, a developing apparatus 73, a first etching apparatus 76, a filling apparatus 77, a second etching apparatus 78, and a separating apparatus 79.

[0235] First, prepare a metal plate wound into a coil. Then, unwind the metal plate from the coil. The metal plate unwound from the coil is indicated by reference numeral 55A. The metal plate 55A is sequentially conveyed to the resist forming device 71, the exposure device 72, the developing device 73, the first etching device 76, the filling device 77, the second etching device 78, and the separating device 79. In all devices from the resist forming device 71 to the separating device 79, the metal plate 55A can also be conveyed continuously along its length. Although not shown in the figure, the manufacturing method of the mask 50 can also include: a process of winding the metal plate 55A into a coil when conveying the metal plate 55A from one device to the next device; and a process of unwinding the metal plate 55A from the coil.

[0236] like Figure 18 As shown, the resist forming apparatus 71 performs the following resist forming process: in this resist forming process, a first resist layer 60 is formed on the first surface 551 of the metal plate 55A, and a second resist layer 65 is formed on the second surface 552. The resist layers 60 and 65 may be formed by applying a solution containing a resist material to the surface of the metal plate 55A and curing the solution. Alternatively, the resist layers 60 and 65 may be formed by attaching a film such as a dry film to the surface of the metal plate 55A.

[0237] The coating type resist layer is formed by applying a solution containing a photosensitive material to the surface of the metal plate 55A and curing it. At this time, a firing step can be performed to fire the resist layers 60 and 65. The photosensitive material can be a photosoluble type, so-called positive type, or a photocurable type, so-called negative type.

[0238] Positive photosensitive materials include novolac-based positive resists such as SC500, and negative photosensitive materials include casein resists. Negative resist layers may also contain acrylic resins.

[0239] The exposure device 72 performs an exposure process of exposing the first resist layer 60 and exposing the second resist layer 65. Figure 19 As shown, the first exposure light LE1 is irradiated onto the first resist layer 60 via the first exposure mask 64. The second exposure light LE2 is irradiated onto the second resist layer 65 via the second exposure mask 69. The exposure step may include a step of adjusting the relative position of the second exposure mask 69 with respect to the first exposure mask 64.

[0240] The developing device 73 performs a developing process of developing the first resist layer 60 and developing the second resist layer 65. Figure 20 As shown, a first opening 62 is formed in a first resist layer 60, and a second opening 67 is formed in a second resist layer 65. The first resist layer 60 having the first opening 62 formed therein is also referred to as a first resist pattern 61. The second resist layer 65 having the second opening 67 formed therein is also referred to as a second resist pattern 66.

[0241] The process of forming the first resist pattern 61 on the first surface 551 and the second resist pattern 66 on the second surface 552 is also referred to as a resist pattern forming process. The resist pattern forming process includes the aforementioned resist forming process, exposure process, and development process. The exposure process and development process are also referred to as a patterning process.

[0242] Figure 21 is a top view showing an example of the first resist pattern 61. The contours of the plurality of first openings 62 may each include two 31st sides 621 that oppose each other in the second direction E2. The contours of the plurality of first openings 62 may each include two 32nd sides 622 that oppose each other in the first direction E1. The contours of the first openings 62 may also be composed of two 31st sides 621 and two 32nd sides 622.

[0243] The two 31st sides 621 may each include a straight portion extending linearly. The straight portion of the 31st side 621 may extend in the first direction E1.

[0244] The two 32nd sides 622 may each include a straight portion extending linearly. The straight portion of the 32nd side 622 may extend in the second direction E2.

[0245] The 31st side 621 may be connected to the 32nd side 622. The portion of the outline of the first opening 62 that connects the 31st side 621 and the 32nd side 622 may be bent or curved.

[0246] Figure 22 : is a top view showing an example of the second resist pattern 66. Figure 22 In FIG, the outline of the first opening 62 of the first resist pattern 61 is indicated by a dotted line. The outlines of the plurality of second openings 67 may each surround the outline of the first opening 62 in a plan view.

[0247] The contours of the plurality of second openings 67 may each include two 41st sides 671 that are opposed to each other in the second direction E2. The contours of the plurality of second openings 67 may each include two 42nd sides 672 that are opposed to each other in the first direction E1. The contours of the second openings 67 may also be composed of two 41st sides 671 and two 42nd sides 672.

[0248] The two 41st sides 671 may each include a straight portion extending linearly. The straight portion of the 41st side 671 may extend in the first direction E1.

[0249] The two 42nd sides 672 may each include a straight portion extending linearly. The straight portion of the 42nd side 672 may extend in the second direction E2.

[0250] The 41st side 671 and the 42nd side 672 may be connected. The portion of the outline of the second opening 67 that connects the 41st side 671 and the 42nd side 672 may be bent or curved.

[0251] The first etching device 76 performs a first etching process of etching the first surface 551 using a first etching liquid. By allowing the first etching liquid to enter the first opening 62, as shown in FIG. Figure 23 As shown, a first recess 56a is formed on the first surface 551. The first recess 56a does not penetrate the metal plate 55. The first etching solution may include an acidic solution capable of dissolving the iron alloy. For example, the first etching solution may include a ferric chloride solution.

[0252] Figure 23 and the following Figures 24 to 28 A cross section of the metal plate 55A cut along the plane Lm is shown.

[0253] During the first etching step, the first etching liquid can be sprayed onto the first surface 551. The first etching step can be performed with the first surface 551 positioned below the second surface 552. In this case, the first etching liquid in contact with the metal plate 55 can fall from the metal plate 55 due to gravity. This prevents the first etching liquid, in which the material of the metal plate 55 is dissolved, from continuously contacting the first surface 551.

[0254] like Figure 24 As shown, the filling device 77 performs a filling process of filling the first concave portion 56a with the resin 63. By filling the first concave portion 56a with the resin 63, it is possible to suppress the second etching solution from entering the first concave portion 56a during the second etching process. Figure 24 As shown, a resin layer 63L covering the first resist pattern 61 may be formed in the filling step. The resin 63 constituting the resin layer 63L fills the first recess 56a. Although not shown, the filling step may be performed with the first surface 551 positioned above the second surface 552.

[0255] like Figure 24 As shown, a depression 631 may be formed on the surface of the resin layer 63L. The depression 631 is formed by causing the resin 63 constituting the resin layer 63L to flow toward the first concave portion 56a. The depression 631 may be formed at a position overlapping with the first concave portion 56a in the thickness direction.

[0256] The material of resin 63 may also be configured to be slightly soluble in the second etching solution. The second etching solution may include, for example, an acidic solution capable of dissolving an iron alloy. For example, the second etching solution may include a ferric chloride solution. The material of resin 63 may also be configured to be slightly soluble in an acidic solution.

[0257] For example, resin 63 may comprise an acrylic resin containing acrylic acid. Acrylic resins can include acrylic acid and acrylic esters. The lower the acrylic acid content in the acrylic resin, the lower the acrylic resin's resistance to acidic solutions. By adjusting the acrylic acid content in the acrylic resin of resin 63, resin 63 can be slightly dissolved in the second etching solution during the second etching step.

[0258] The second etching device 78 performs a second etching process of etching the second surface 552 using a second etching liquid. By allowing the second etching liquid to enter the second opening 67, the second surface 552 is etched. Figure 25 and Figure 26 As shown in FIG, second recesses 56b are formed on the second surface 552. The plurality of second recesses 56b are connected to the corresponding first recesses 56a.

[0259] During the second etching step, the second etching liquid can be sprayed onto the second surface 552. Although not shown, the second etching step can also be performed with the second surface 552 positioned below the first surface 551. In this case, the second etching liquid in contact with the metal plate 55 can fall from the metal plate 55 due to gravity. This prevents the second etching liquid, which has dissolved the material of the metal plate 55, from continuing to contact the metal plate 55.

[0260] Figure 25 FIG. 2 shows a state in which the second etching step is performed until the second recess 56b reaches the resin 63. When the second recess 56b reaches the resin 63, the second etching liquid contacts the surface of the resin 63. When the surface of the resin 63 is dissolved in the second etching liquid, as shown in FIG. Figure 26 As shown, a gap is formed between the metal plate 55A and the resin 63. The gap is also referred to as a groove 56g. The groove 56g may have an outline surrounding a portion of the resin 63 in a plan view.

[0261] like Figure 27 As shown, the etching of the metal plate 55A may be performed along the surface of the resin 63 so that the groove 56g expands in the thickness direction Et. The second etching step may also be performed until the groove 56g reaches the first surface 551. In this case, the wall surface 57 is formed by the second etching step. Although not shown, the wall surface 57 may also partially include the surface of the first recess 56a formed by the first etching step.

[0262] like Figure 27 As shown, the third imaginary point P13 on the wall surface 57 does not need to be in contact with the resin 63. Since the groove 56g is formed in the second etching step, the third imaginary point P13 can be generated at a position away from the resin 63.

[0263] Reference symbol K13 denotes the distance between the wall surface 57 and the resin 63 in the in-plane direction of the first surface 551 at the position of the third imaginary point P13 in the thickness direction Et. Distance K13, like the third imaginary point P13, is determined in a cross section of the mask 50 taken along the plane Lm. Distance K13 refers to the width of the groove 56g at the position of the third imaginary point P13. The width of the groove 56g may decrease from the third imaginary point P13 toward the first end 58.

[0264] The distance K13 may be, for example, greater than 0.5 μm, greater than 1.0 μm, or greater than 1.5 μm. The distance K13 may be, for example, less than 2.0 μm, less than 3.0 μm, or less than 4.0 μm. The range of the distance K13 may be determined by the first group consisting of 0.5 μm, 1.0 μm, and 1.5 μm and / or the second group consisting of 2.0 μm, 3.0 μm, and 4.0 μm. The range of the distance K13 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the distance K13 may also be determined by a combination of any two of the values ​​included in the first group. The range of the distance K13 may also be determined by a combination of any two of the values ​​included in the second group. The distance K13 can be, for example, greater than 0.5 μm and less than 4.0 μm, greater than 0.5 μm and less than 3.0 μm, greater than 0.5 μm and less than 2.0 μm, greater than 0.5 μm and less than 1.5 μm, greater than 0.5 μm and less than 1.0 μm, greater than 1.0 μm and less than 4.0 μm, greater than 1.0 μm and less than 3.0 μm, greater than 1.0 μm and less than 2.0 μm, greater than 1.0 μm and less than 1.5 μm, greater than 1.5 μm and less than 4.0 μm, greater than 1.5 μm and less than 3.0 μm, greater than 1.5 μm and less than 2.0 μm, greater than 2.0 μm and less than 4.0 μm, greater than 2.0 μm and less than 3.0 μm, greater than 3.0 μm and less than 4.0 μm.

[0265] The distance K13 can also be determined relative to the height H63 of the resin 63. The height H63 is the maximum value of the distance between the surface of the resin 63 and the first surface 551 in the thickness direction Et. The ratio of the distance K13 to the height H63, i.e., K13 / H63, can be, for example, greater than 0.05, greater than 0.10, or greater than 0.15. K13 / H63 can be, for example, less than 0.20, less than 0.30, or less than 0.40. The range of K13 / H63 can be determined by the first group consisting of 0.05, 0.10, and 0.15 and / or the second group consisting of 0.20, 0.30, and 0.40. The range of K13 / H63 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of K13 / H63 can also be determined by a combination of any two of the values ​​included in the first group. The range of K13 / H63 can also be determined by combining any two of the values ​​included in the above-mentioned Group 2. For example, K13 / H63 may be 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.15 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.10 or more and 0.15 or less, 0.15 or more and 0.40 or less, 0.15 or more and 0.30 or less, 0.15 or more and 0.20 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0266] The removal step may be performed after the second etching step. The removal step may include a resin removal step for removing the resin 63. The resin 63 is removed, for example, using an alkaline stripping solution. The removal step may include a resist removal step for removing the first resist layer 60 and the second resist layer 65. The first resist layer 60 and the second resist layer 65 can be removed simultaneously with the resin 63 using an alkaline stripping solution. After removing the resin 63, the first resist layer 60 and the second resist layer 65 can be removed using a stripping solution different from the stripping solution used to strip the resin 63. Figure 28 It is a cross-sectional view showing the metal plate 55A in a state where the resin 63 , the first resist layer 60 , and the second resist layer 65 are removed.

[0267] The separating device 79 performs a separating step of separating the mask 50 from the metal plate 55A. The mask 50 is obtained by cutting out the region of the metal plate 55A where the through-hole group 53 is formed.

[0268] In this embodiment, since the resin 63 dissolves in the second etching solution during the second etching step, a groove 56g is formed between the metal plate 55A and the resin 63. Therefore, compared to a case where the metal plate 55A and the resin 63 are maintained in close contact, the wall surface 57 of the mask 50 in this embodiment can have a reduced third dimension S13. Consequently, shadows during the vapor deposition step can be suppressed.

[0269] Figure 29 This figure shows the second etching step in a cross section of metal plate 55A cut along a plane perpendicular to the straight portion of 21st side 591 of second end 59. In the second etching step, fresh second etching liquid is continuously supplied to second surface 552. Second surface 552 is etched to form second end 59. Figure 29 The state shown is the state immediately after the second recess 56b is connected to the first recess 56a. The second etching step is from Figure 29 The state shown is further implemented.

[0270] The second etching liquid flows more easily near the straight portion of the 21st side 591 of the second end 59 than near the connection between the 21st side 591 and the 22nd side 592. Therefore, the ratio of fresh second etching liquid near the straight portion of the second end 59 is higher than the ratio of fresh second etching liquid near the connection portion of the second end 59. The higher the ratio of fresh second etching liquid, the faster the etching rate. Therefore, immediately after the second recess 56b is connected to the first recess 56a, the inclination angle θ6 of the second recess 56b at the straight portion of the second end 59 is greater than the inclination angle θ6 of the second recess 56b at the connection portion of the second end 59. The inclination angle θ6 is the angle between the imaginary straight line L16 tangent to the surface of the second recess 56b at the second end 59 and the second surface 552.

[0271] Figure 30 1 is a diagram showing an example of a cross section of the mask 50 cut along a plane perpendicular to the straight line portion of the second end 59. Figure 30 The dotted line is the reference Figure 14A The wall surface 57 in the cross section of the mask 50 cut along the plane Lm is shown. Figure 30 As shown, the wall surface 57 of the straight portion at the second end 59 is located outside the wall surface 57 at the connection portion at the second end 59. Therefore, at the wall surface 57 of the straight portion at the second end 59, shadows during the vapor deposition process are suppressed in the same manner as at the wall surface 57 at the connection portion at the second end 59.

[0272] During the vapor deposition process, the vapor deposition material is less likely to reach the substrate 110 near the connection portion of the second end 59 than near the linear portion of the second end 59. In this embodiment, as described above, since shadows are suppressed near the connection portion of the second end 59, shadows are naturally also suppressed near other portions of the second end 59. Therefore, the width W1 of the end portion 132 is reduced across the entire outer edge of the organic layer 130.

[0273] When the width W1 is reduced, the area of ​​the organic layer 130 that can emit light increases. In other words, the light-emitting area of ​​the organic layer 130 increases. Therefore, the same light emission intensity as conventional display devices can be achieved with lower power than conventional display devices.

[0274] Figure 31 This is a cross-sectional view showing the second etching step in the first comparative embodiment. In the first comparative embodiment, the resin 63 has high resistance to the second etching solution. Therefore, during the second etching step, the metal plate 55A and the resin 63 are kept in close contact.

[0275] Figure 32A 1 is a diagram showing a cross section of the mask cut along the plane Lm in the first comparative embodiment. Since the metal plate 55A and the resin 63 are kept in close contact during the second etching step, a portion of the first wall surface 571 has a shape corresponding to the surface of the resin 63. As a result, Figure 32A As shown in FIG. 5 , the third imaginary point P13 greatly protrudes inward relative to the first imaginary straight line L11 , and the third dimension S13 increases. The third imaginary point P13 is located inward of the first end 58 .

[0276] On the other hand, in the present embodiment described above, during the second etching step, the resin 63 dissolves in the second etching solution, thereby forming a groove 56g between the metal plate 55A and the resin 63. Therefore, the wall surface 57 of the mask 50 in this embodiment can have a smaller third dimension S13 than that in the first comparative embodiment. Consequently, shadows during the vapor deposition step can be suppressed.

[0277] Figure 32B This is a cross-sectional view showing first wall surface 571 in the first comparative embodiment. In the first comparative embodiment, first wall surface 571 is also divided into an 11th wall surface 5711 and a 12th wall surface 5712, with the third imaginary point P13 serving as the boundary. The 3A1 imaginary point P13A1 and the 3A2 imaginary point P13A2 are defined on the 11th wall surface 5711 and the 12th wall surface 5712 based on the 3A imaginary straight line L13A.

[0278] In the first comparison method, the third imaginary point P13 protrudes greatly inward relative to the first imaginary straight line L11. Figure 32BAs shown, the distance TA1 and the distance TA2 are relatively small. The smaller the distance TA1 and the distance TA2 are, the greater the influence of the change in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551. Therefore, in the first comparative embodiment, it can be considered that the linearity of the outline of the boundary of the organic layer or the linearity of the outline of the outer edge of the organic layer when viewed from above is low.

[0279] On the other hand, in the present embodiment described above, the distances TA1 and TA2 are relatively large. Therefore, the effect of variations in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, even if the position of the third imaginary point P13 in the thickness direction Et varies in a single through-hole 56 of the mask 50, the linearity of the outline of the boundary 133 when viewed from above can be maintained.

[0280] Figure 33 This is a cross-sectional view showing the second etching step in the second comparative embodiment. In the second comparative embodiment, resin 63 has high resistance to the second etching solution, similar to the first comparative embodiment. Therefore, during the second etching step, close contact is maintained between metal plate 55A and resin 63. Furthermore, in the second comparative embodiment, the second etching step takes longer than in the first comparative embodiment. Consequently, the size of second recess 56b formed by the second etching step is larger than in the first comparative embodiment.

[0281] Figure 34A This figure shows a cross-section of the mask taken along the aforementioned plane Lm in the second comparative embodiment. Due to the larger dimensions of the second recess 56b, the position of the third imaginary point P13 is closer to the first end 58. As a result, the third dimension S13 and the third height H13 are smaller than those in the first comparative embodiment. On the other hand, due to the larger dimensions of the second recess 56b, the position of the second end 59 is offset outward. As a result, the second dimension S12 and the fourth dimension S14 are larger than those in the first comparative embodiment, reducing the strength of the mask 50.

[0282] On the other hand, in the present embodiment described above, the amount of metal plate 55A etched around resin 63 increases during the second etching step, but the amount of metal plate 55A etched at the second end 59 is maintained. Therefore, the third dimension S13 can be reduced while maintaining the strength of mask 50. Furthermore, according to this embodiment, the ratio of third dimension S13 to third height H13, i.e., S13 / H13, can be reduced compared to the second comparative embodiment.

[0283] Figure 34BThis is a cross-sectional view showing first wall surface 571 in the second comparative embodiment. In the second comparative embodiment, first wall surface 571 is also divided into an 11th wall surface 5711 and a 12th wall surface 5712, with the third imaginary point P13 serving as the boundary. The 3A1 imaginary point P13A1 and the 3A2 imaginary point P13A2 are defined on the 11th wall surface 5711 and the 12th wall surface 5712 based on the 3A imaginary straight line L13A.

[0284] In the second comparison method, as in the case of the first comparison method, the portion of the third imaginary point P13 greatly protrudes inward relative to the first imaginary straight line L11. Figure 34B Therefore, in the second comparative embodiment, it is also considered that the linearity of the outline of the boundary of the organic layer or the linearity of the outline of the outer edge of the organic layer in a plan view is low.

[0285] On the other hand, in the present embodiment described above, the distances TA1 and TA2 are relatively large. Therefore, the effect of variations in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, even if the position of the third imaginary point P13 in the thickness direction Et varies in a single through-hole 56 of the mask 50, the linearity of the contour of the boundary 133 or the contour of the outer edge of the organic layer 130 when viewed from above can be maintained.

[0286] Figure 47A This is a diagram showing a cross section of the mask cut along the above-mentioned plane Lm in the third comparative embodiment. Figure 47B This is a cross-sectional view showing first wall surface 571 in the third comparative embodiment. In the third comparative embodiment, first wall surface 571 is also divided into an 11th wall surface 5711 and a 12th wall surface 5712, with the third imaginary point P13 serving as the boundary. The 3A1 imaginary point P13A1 and the 3A2 imaginary point P13A2 are defined on the 11th wall surface 5711 and the 12th wall surface 5712 based on the 3A imaginary straight line L13A.

[0287] In the third comparative embodiment, the 11th wall surface 5711 includes a portion that shifts inward as it moves from the third imaginary point P13 toward the first end 58. The third imaginary point P13 is located further outboard of the first end 58. Therefore, in the third comparative embodiment, the amount by which the portion at the third imaginary point P13 protrudes relative to the first imaginary straight line L11 is smaller than in the first and second comparative embodiments.

[0288] like Figure 47BAs shown, in the third comparative embodiment, an eighth imaginary point P18 is also defined on the eleventh wall surface 5711. Unlike the present embodiment, in the third comparative embodiment, the eighth imaginary straight line L18 and the eighth imaginary point P18 are located outside the seventh imaginary straight line L17. Therefore, in the third comparative embodiment, the thickness of the mask around the first end 58 is smaller than in the present embodiment.

[0289] In the present embodiment, the eighth imaginary straight line L18 and the eighth imaginary point P18 are located inside the seventh imaginary straight line L17. Since the thickness of the mask 50 around the first end 58 is increased, the strength of the mask 50 is improved.

[0290] Figure 47C : is a cross-sectional view showing the first wall surface 571 in the third comparative embodiment. In the third comparative embodiment, as in the first and second comparative embodiments, the direction in which the first wall surface 571 extends changes discontinuously with the third imaginary point P13 as the boundary. For example, in the cross-sectional view of the mask, the direction in which the tangent line tangent to the 11th wall surface 5711 extends and the direction in which the tangent line tangent to the 12th wall surface 5712 extends change discontinuously with the third imaginary point P13 as the boundary. Therefore, as shown in FIG. Figure 47C Therefore, in the third comparative embodiment, it is also considered that the linearity of the outline of the boundary of the organic layer or the linearity of the outline of the outer edge of the organic layer in a plan view is low.

[0291] On the other hand, in the present embodiment described above, the direction in which the first wall surface 571 expands changes gently and continuously near the third imaginary point P13, thereby achieving relatively large distances TA1 and TA2. Consequently, the linearity of the outline of the boundary 133 or the outline of the outer edge of the organic layer 130 can be maintained when viewed from above.

[0292] Figure 48A This is a diagram showing a cross section of the mask cut along the above-mentioned plane Lm in the fourth comparative embodiment. Figure 48B This is a cross-sectional view showing first wall surface 571 in the fourth comparative embodiment. In the fourth comparative embodiment, first wall surface 571 is also divided into an 11th wall surface 5711 and a 12th wall surface 5712, with the third imaginary point P13 serving as the boundary. The 3A1 imaginary point P13A1 and the 3A2 imaginary point P13A2 are defined on the 11th wall surface 5711 and the 12th wall surface 5712 based on the 3A imaginary straight line L13A.

[0293] In the fourth comparative embodiment, the 11th wall surface 5711 extends linearly from the third imaginary point P13 toward the first end 58. The third imaginary point P13 is located outside the first end 58. Such an 11th wall surface 5711 is formed by processing the first surface of a metal plate using laser processing, for example.

[0294] like Figure 48B As shown, in the fourth comparative example, the seventh imaginary straight line L17 and the eighth imaginary straight line L18 coincide with the eleventh wall surface 5711 .

[0295] In this embodiment, the eighth imaginary line L18 and the eighth imaginary point P18 are located inside the seventh imaginary line L17. In this embodiment, the thickness of the mask 50 around the first end 58 is greater than that in the fourth comparative embodiment, thereby improving the strength of the mask 50.

[0296] Figure 48C : is a cross-sectional view showing the first wall surface 571 in the fourth comparative embodiment. In the fourth comparative embodiment, as in the first and second comparative embodiments, the direction in which the first wall surface 571 extends changes discontinuously with the third imaginary point P13 as the boundary. For example, in the cross-sectional view of the mask, the direction in which the tangent line tangent to the 11th wall surface 5711 extends and the direction in which the tangent line tangent to the 12th wall surface 5712 extends change discontinuously with the third imaginary point P13 as the boundary. Therefore, as shown in FIG. Figure 48C Therefore, in the fourth comparative embodiment, it is also considered that the linearity of the outline of the boundary of the organic layer or the linearity of the outline of the outer edge of the organic layer in a plan view is low.

[0297] On the other hand, in the present embodiment described above, the direction in which the first wall surface 571 extends changes smoothly and continuously near the third imaginary point P13, thereby achieving relatively large distances TA1 and TA2. Consequently, the linearity of the outline of the boundary 133 or the outline of the outer edge of the organic layer 130 can be maintained when viewed from above.

[0298] Figure 49 : is a diagram showing the first wall surface 571 of the mask 50 in the embodiment of the present disclosure and the first wall surface 571 of the mask in the fourth comparative embodiment overlapped. The mask in the fourth comparative embodiment is depicted with a dotted line. Figure 49 In FIG, the two masks are drawn so that the third imaginary point P13 and the first end 58 of the two masks coincide with each other.

[0299] In the two masks, since the third imaginary point P13 and the first end 58 are identical, the performance of the two masks with respect to shadows is equivalent. Figure 49It can be seen that the mask 50 of the embodiment of the present disclosure has a greater thickness around the first end 58 and around the third imaginary point P13 than the mask of the fourth comparative embodiment. The mask 50 of the embodiment of the present disclosure can improve the strength of the mask 50 while suppressing shadows.

[0300] Figure 50 : is a diagram showing the first wall surface 571 of the mask 50 in the embodiment of the present disclosure and the first wall surface 571 of the mask in the fourth comparative embodiment overlapped. The mask in the fourth comparative embodiment is depicted with a dotted line. Figure 50 In the figure, two masks are drawn so that the thicknesses of the two masks around the first end 58 are equal.

[0301] from Figure 50 It can be seen that in the mask 50 of the embodiment of the present disclosure, the third imaginary point P13 and the first end 58 are located outside compared to the mask of the fourth comparative embodiment. The mask 50 of the embodiment of the present disclosure can suppress shadows while maintaining the strength of the mask 50.

[0302] Figures 51 to 54 2 is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment. The method for manufacturing a mask in the fifth comparative embodiment differs from the method for manufacturing a mask in the present embodiment in that the step of filling the first recess 56a with resin is not performed.

[0303] like Figure 51 As shown in FIG. 1 , the second etching step of etching the second surface 552 using the second etching solution is performed in a state where the resin is not filled in the first recess 56a. Figure 52 As shown in FIG. 5 , the second recess 56b formed on the second surface 552 is connected to the first recess 56a that is not filled with resin. As a result, the entire area of ​​the wall surface of the first recess 56a is exposed to the second etching solution. Figure 53 As shown by the arrows in FIG, the positions of the wall surface of the first recess 56a and the wall surface of the second recess 56b are shifted outward as a whole. For example, not only the connection position of the first recess 56a and the second recess 56b but also the position of the first end 58 of the first recess 56a is shifted outward. Figure 54 An example of the shape of the through hole 56 formed by the second etching step is shown in FIG.

[0304] Figure 55This figure shows a cross-section of the mask in the fifth comparative embodiment. In the fifth comparative embodiment, after the second recess 56b is connected to the first recess 56a, the connection position between the first and second recesses 56a and 56b shifts outward. However, the position of the first end 58 of the first recess 56a also shifts outward. As a result, not only the third dimension S13 decreases, but also the second dimension S12. Therefore, it is believed that the ratio of the third dimension S13 to the second dimension S12, S13 / S12, has not been sufficiently reduced.

[0305] On the other hand, in the present embodiment described above, a filling step of resin is performed in the first recess 56a. Therefore, the position of the first end 58 of the first recess 56a is prevented from shifting outward during the second etching step. As a result, S13 / S12 is substantially reduced. By suppressing the positional shift of the first end 58, the dimensional accuracy of the contour of the first end 58 in the first direction E1 and the second direction E2 is improved.

[0306] Next, an example of a method for manufacturing the organic device 100 will be described.

[0307] First, a substrate 110 having first electrodes 120 formed thereon is prepared. The first electrodes 120 are formed, for example, by forming a conductive layer constituting the first electrodes 120 on the substrate 110 by sputtering or the like, and then patterning the conductive layer by photolithography or the like. An insulating layer 160 positioned between two adjacent first electrodes 120 may also be formed on the substrate 110.

[0308] Subsequently, the organic layer 130 including the first organic layer 130A and the second organic layer 130B is formed on the first electrode 120. The first organic layer 130A is formed by vapor deposition using a first mask 50 having through-holes 56 corresponding to the first organic layer 130A. The second organic layer 130B is also formed by vapor deposition using a second mask 50 having through-holes 56 corresponding to the second organic layer 130B. The third organic layer 130C is also formed by vapor deposition using a third mask 50 having through-holes 56 corresponding to the third organic layer 130C.

[0309] Next, a step of forming the second electrode 140 on the organic layer 130 is performed. In this way, the organic device 100 can be obtained.

[0310] According to this embodiment, by forming the organic layer 130 using the mask 50 that suppresses shadows, it is possible to increase the light-emitting area of ​​the organic layer 130. Therefore, it is possible to reduce power consumption of the organic device 100.

[0311] Various changes can be made to the above-mentioned embodiment. Below, other embodiments will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, for parts that can be constructed in the same manner as the above-mentioned embodiment, the same reference numerals as those used for the corresponding parts in the above-mentioned embodiment are used. And repeated descriptions are omitted. In addition, if the effects obtained in the above-mentioned embodiment are obviously also obtainable in other embodiments, their descriptions may be omitted.

[0312] Figure 35 It is a perspective view showing an example of the through-hole group 53 . Figure 36 1 is a cross-sectional view showing an example of the through-hole group 53 . Figure 36 It is along Figure 35 A cross-sectional view of line XXXVI-XXXVI.

[0313] like Figure 35 and Figure 36 As shown, the second ends 59 of two adjacent through-holes 56 may merge. The portion where the second ends 59 of the two through-holes 56 merge is also referred to as a merged portion 593.

[0314] Figure 37 This is a cross-sectional view showing the formation of a junction 593 in the second etching step. The junction 593 is formed by etching the side of the metal plate 55A in the region overlapping the second resist layer 65. The junction 593 does not contact the second resist layer 65.

[0315] The distance between the first end 58 and the confluence portion 593 in the thickness direction Et is also referred to as the confluence height T1. The confluence height T1 is smaller than the thickness T0 of the metal plate 55A. The ratio of the confluence height T1 to the thickness T0, i.e., T1 / T0, can be, for example, greater than 0.30, greater than 0.50, or greater than 0.70. T1 / T0 can be, for example, less than 0.80, less than 0.90, or less than 0.95. The range of T1 / T0 can be determined by the first group consisting of 0.30, 0.50, and 0.70 and / or the second group consisting of 0.80, 0.90, and 0.95. The range of T1 / T0 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T1 / T0 can also be determined by a combination of any two of the values ​​included in the first group. The range of T1 / T0 can also be determined by a combination of any two of the values ​​included in the second group. T1 / T0 can be, for example, greater than or equal to 0.30 and less than or equal to 0.95, greater than or equal to 0.30 and less than or equal to 0.90, greater than or equal to 0.30 and less than or equal to 0.80, greater than or equal to 0.30 and less than or equal to 0.70, greater than or equal to 0.30 and less than or equal to 0.50, greater than or equal to 0.50 and less than or equal to 0.95, greater than or equal to 0.50 and less than or equal to 0.90, greater than or equal to 0.50 and less than or equal to 0.80, greater than or equal to 0.50 and less than or equal to 0.70, greater than or equal to 0.95, greater than or equal to 0.70 and less than or equal to 0.90, greater than or equal to 0.70 and less than or equal to 0.80, greater than or equal to 0.80 and less than or equal to 0.95, greater than or equal to 0.80 and less than or equal to 0.90, or greater than or equal to 0.95.

[0316] In the second comparative embodiment described above, the second etching step takes a longer time. In this case, the junction height T1 decreases. The smaller the junction height T1, the lower the strength of the mask 50. On the other hand, in this embodiment, the amount of metal plate 55A etched around the resin 63 increases during the second etching step, but the amount of metal plate 55A etched at the second end 59 is maintained. Therefore, according to this embodiment, compared with the second comparative embodiment, the junction height T1 and T1 / T0 can be increased.

[0317] Figure 38 593 is a top view for explaining the confluence portion 593 in detail. Figure 38 1 shows a first through-hole 56A and a second through-hole 56B adjacent to the first through-hole 56A in the second direction E2. A 21st side 591 of the first through-hole 56A merges with a 21st side 591 of the second through-hole 56B. The merging portion of the two 21st sides 591 is also referred to as a first merging portion 593.

[0318] The first merging portion 593 is the portion of the two 21st sides 591 located between a straight line SL5 extending in the first direction E1 and a straight line SL6 extending parallel to the straight line SL5. The straight line SL5 is located inside the 21st side 591 of the first through-hole 56A and in contact with the 21st side 591 of the first through-hole 56A. The straight line SL6 is located outside the 21st side 591 of the first through-hole 56A. The distance between the straight lines SL5 and SL6 in the second direction E2 is ΔR2. In other words, the straight line SL6 is located outside the 21st side 591 of the first through-hole 56A and is separated from the straight line SL5 by ΔR2 in the second direction E2. The distance ΔR2 is 2.0 μm. The range in which the 21st side 591 of the first through-hole 56A and the 21st side 591 of the second through-hole 56B are located between the straight line SL5 and the straight line SL6 is defined as the length R21c of the first merging portion 593 .

[0319] The ratio of the length R21c of the first confluence 593 to the dimension R21 of the 21st side 591, i.e., R21c / R21, can be, for example, greater than 0.30, greater than 0.40, or greater than 0.50. R21c / R21 can be, for example, less than 0.75, less than 0.85, or less than 0.95. The range of R21c / R21 can also be determined by a first group consisting of 0.30, 0.40, and 0.50 and / or a second group consisting of 0.75, 0.85, and 0.95. The range of R21c / R21 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of R21c / R21 can also be determined by a combination of any two of the values ​​included in the first group. The range of R21c / R21 can also be determined by a combination of any two of the values ​​included in the second group. R21c / R21 can be, for example, 0.30 or more and 0.95 or less, 0.30 or more and 0.85 or less, 0.30 or more and 0.75 or less, 0.30 or more and 0.50 or less, 0.30 or more and 0.40 or less, 0.40 or more and 0.95 or less, 0.40 or more and 0.85 or less, 0.40 or more and 0.75 or less, 0.40 or more and 0.50 or less, 0.50 or more and 0.95 or less, 0.50 or more and 0.85 or less, 0.50 or more and 0.75 or less, 0.75 or more and 0.95 or less, 0.75 or more and 0.85 or less, 0.85 or more and 0.95 or less.

[0320] Figure 39This is a plan view showing an example of a through-hole group 53 including a first merging portion 593. The first merging portion 593 extends along the first direction E1 between two adjacent through-holes 56 in the second direction E2. The rib 553 on the second surface 552 includes a portion located between two adjacent second ends 59 in the first direction E1 and a portion located between two adjacent second ends 59 in the third direction E3.

[0321] exist Figures 35 to 39 In the example shown, the second dimension S12, the third dimension S13 and the like are also determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Figures 35 to 39 In the example shown, by controlling S13 / S12 , it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50 .

[0322] exist Figures 35 to 39 In the example shown, the vapor deposition material passing through the vicinity of the first confluence portion 593 can adhere to the substrate 110 near the connection portion of the second end 59. The confluence height T1 of the first confluence portion 593 is smaller than the thickness T0 of the metal plate 55A. Therefore, compared with the case where the mask 50 does not include the first confluence portion 593, the vapor deposition material is more likely to reach the substrate 110 near the connection portion of the second end 59. Therefore, according to Figures 35 to 39 In the example shown, shadows in the vicinity of the connection portion of the second end 59 can be suppressed.

[0323] Figure 40 : is a perspective view showing an example of the through hole group 53. Figure 40 As shown, two second ends 59 adjacent to each other in the second direction E2 may merge together, and two second ends 59 adjacent to each other in the first direction E1 may merge together.

[0324] Figure 41 1 is a top view for explaining in detail the junction of two second ends 59 adjacent to each other in the first direction E1. Figure 41 1 shows a first through-hole 56A and a third through-hole 56C adjacent to the first through-hole 56A in the first direction E1. A 22nd side 592 of the first through-hole 56A merges with a 22nd side 592 of the third through-hole 56C. The merging portion of the two 22nd sides 592 is also referred to as a second merging portion 594.

[0325] The second merging portion 594 is the portion of the two 22nd sides 592 located between a straight line SL7 extending in the second direction E2 and a straight line SL8 extending parallel to the straight line SL7. The straight line SL7 is located inside the 22nd side 592 of the first through-hole 56A and is in contact with the 22nd side 592 of the first through-hole 56A. The straight line SL8 is located outside the 22nd side 592 of the first through-hole 56A. The distance between the straight lines SL7 and SL8 in the first direction E1 is ΔR2. In other words, the straight line SL8 is located outside the 22nd side 592 of the first through-hole 56A and is separated from the straight line SL7 by ΔR2 in the first direction E1. The range between the 22nd side 592 of the first through-hole 56A and the 22nd side 592 of the third through-hole 56C between the straight lines SL7 and SL8 is defined as the length R22c of the second merging portion 594.

[0326] The numerical range of R22c / R22, which is the ratio of the length R22c of the second merging portion 594 to the dimension R22 of the 22nd side 592, may be the same as the numerical range of R21c / R21 described above.

[0327] Figure 42 This is a top view showing an example of a through-hole group 53 including a first merging portion 593 and a second merging portion 594. The first merging portion 593 extends along the first direction E1 between two adjacent through-holes 56 in the second direction E2. The second merging portion 594 extends along the second direction E2 between two adjacent through-holes 56 in the first direction E1. The rib 553 of the second surface 552 includes a portion located between two adjacent second ends 59 in the third direction E3.

[0328] exist Figures 40 to 42 In the example shown, the second dimension S12, the third dimension S13 and the like are also determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Figures 40 to 42 In the example shown, by controlling S13 / S12 , it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50 .

[0329] Figure 43 1 is a plan view showing another example of the through-hole group 53 including the first merging portion 593 and the second merging portion 594 .

[0330] In the above embodiment, an example is shown in which the shape of the first end 58 of the wall surface 57 is similar to the shape of the second end 59. For example, an example is shown in which the first end 58 includes the 11th side 581 extending in parallel with the 21st side 591 of the second end 59, and the 12th side 582 extending in parallel with the 22nd side 592 of the second end 59. Figure 43, an example is shown in which the shape of the first end 58 and the shape of the second end 59 of the wall surface 57 are not similar.

[0331] like Figure 43 As shown, the plurality of first ends 58 may each include two 11th sides 581 that are opposite to each other in the fourth direction E4. The plurality of first ends 58 may each include two 12th sides 582 that are opposite to each other in the third direction E3. The first end 58 may also be composed of two 11th sides 581 and two 12th sides 582. The 11th side 581 and the 12th side 582 may also be connected.

[0332] The two 11th sides 581 may each include a straight portion extending straightly. The two 12th sides 582 may each include a straight portion extending straightly. The portion of the first end 58 where the 11th side 581 and the 12th side 582 connect may be curved.

[0333] exist Figure 43 In the example shown, the second dimension S12, the third dimension S13 and the like are also determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Figure 43 In the example shown, by controlling S13 / S12 , it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50 .

[0334] Four intersection points are generated when the second end 59 includes two 21st sides 591 and two 22nd sides 592. The intersection point Cm through which the surface Lm passes is selected so that the distance between the intersection point Cm and the first end 58 is minimized.

[0335] The method for forming a layer on the substrate 110 using the mask 50 described above is not particularly limited. For example, a layer may be formed on the substrate 110 by a physical film forming method other than the vapor deposition method, such as sputtering. In physical film forming methods other than the vapor deposition method, a layer is formed on the substrate 110 by allowing a material passing through the through-holes 56 of the mask 50 to adhere to the substrate 110.

[0336] [Example]

[0337] Next, the embodiments of the present disclosure will be described in more detail with reference to examples. However, the embodiments of the present disclosure are not limited to the description of the following examples unless departing from the gist of the present disclosure.

[0338] (Example A1)

[0339] A metal plate 55A made of an iron alloy containing 36 mass % of nickel, the remainder of iron, and inevitable impurities was prepared. The metal plate 55A had a thickness T0 of 26 μm.

[0340] based on Figures 20 to 31The manufacturing method shown in the figure produces a Figure 13 The mask 50 of the through hole group 53 is shown. The material of the resin 63 is slightly soluble in the second etching solution. The dimensions and other aspects of each component of the through hole group 53 are as follows.

[0341] Dimension R11 of the 11th side 581 of the first end 58: 48.0 μm

[0342] Dimension R12 of the 12th side 582 of the first end 58: 33.0 μm

[0343] First pitch P21 of the second end 59: 96.0 μm

[0344] Second pitch P22 of the second end 59: 96.0 μm

[0345] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50. The sample of the mask 50 was produced by cutting the mask 50 along the surface Lm using a microtome. The surface Lm is a surface inclined at a 45-degree angle relative to the first direction E1 and perpendicular to the first surface 551 and the second surface 552. The microtome used was an UltraMicrotome EMUC7 manufactured by Leica.

[0346] Using a digital microscope, a cross-sectional image of the sample of the mask 50 was obtained around the 10 through-holes 56. The 10 through-holes 56, including the aforementioned central through-hole, were arranged along the direction of the plane Lm. A digital microscope (VHX-7000, manufactured by KEYENCE Co., Ltd.) was used. The observation conditions were as follows.

[0347] Magnification: 2500 times

[0348] If the cross-sectional images of the through-hole 56 and the wall surface 57 do not fit within one screen of the digital microscope at a magnification of 2500 times, the magnification is reduced so that the cross-sectional images of the through-hole 56 and the wall surface 57 fit within one screen.

[0349] The cross-sectional image was analyzed using analysis software (VHX-7000_970F), thereby calculating the dimensions of the wall surfaces 57 surrounding each of the ten through-holes 56. The analysis procedure is as follows.

[0350] Select the auxiliary function "Automatic Edge Extraction" and select the auxiliary tool "Point" to select the point at the first end 58, the point at the second end 59, and the point P10 on the first surface 551 located outside the second end 59.

[0351] Select the auxiliary tool "Line", select the point at the first end 58 and the point at the second end 59. Figure 44As shown, the above-mentioned first imaginary straight line L11 connecting the point of the first end 58 and the point of the second end 59 is drawn.

[0352] Select the auxiliary tool "Line", select the point of the first end 58 and the point P10 on the first surface 551. Figure 44 As shown, a first straight line SL11 connecting a point at the first end 58 and a point on the first surface 551 is drawn.

[0353] Select the auxiliary tool "Vertical Line" and select the point between the first straight line SL11 and the second end 59. Figure 44 As shown, the second imaginary straight line L12 is drawn which passes through the point of the second end 59 and is perpendicular to the first straight line SL11.

[0354] Select the auxiliary tool "Parallel Lines" and select the first straight line SL11 and the third imaginary point P13. Figure 44 As shown in FIG. 1 , a second straight line SL12 passing through the third imaginary point P13 and parallel to the first straight line SL11 is drawn.

[0355] Select the auxiliary tool "Parallel Lines", select the first straight line SL11 and the first imaginary point P11. Figure 44 As shown, a third straight line SL13 passing through the first imaginary point P11 and parallel to the first straight line SL11 is drawn.

[0356] Select the auxiliary tool "Intersection Line" and select the first imaginary straight line L11 and the second straight line SL12. Figure 44 As shown in FIG. 1 , a first intersection point CP11 where the first imaginary straight line L11 and the second straight line SL12 intersect is set.

[0357] Select the auxiliary tool "Intersection Line" and select the second imaginary straight line L12 and the second straight line SL12. Figure 44 As shown in FIG. 1 , a second intersection point CP12 where the second imaginary straight line L12 intersects the second straight line SL12 is set.

[0358] Select the auxiliary tool "Intersection Line" and select the third imaginary straight line L13 and the second straight line SL12. Figure 44 As shown, a third imaginary point P13 where the third imaginary straight line L13 intersects the second straight line SL12 is set as a third intersection point CP13.

[0359] Select the auxiliary tool "Intersection Line" and select the first straight line SL11 and the second imaginary straight line L12. Figure 44 As shown, the second imaginary point P12 where the first straight line SL11 and the second imaginary straight line L12 intersect is set as the fourth intersection point CP14.

[0360] Select the auxiliary tool "Intersection Line" and select the second imaginary straight line L12 and the third straight line SL13. Figure 44 As shown in FIG. 1 , a fifth intersection point CP15 where the second imaginary straight line L12 and the third straight line SL13 intersect is set.

[0361] Select the main measurement "between 2 points" and select the fourth intersection point CP14 and the point of the first end 58. In this way, the above-mentioned second dimension S12 is calculated.

[0362] Select the main measurement "Between two points" and select the first intersection point CP11 and the third intersection point CP13. In this way, the third dimension S13 described above is calculated.

[0363] Select the main measurement "between 2 points" and select the fourth intersection point CP14 and the point of the second end 59. In this way, the above-mentioned reference height H10 is calculated.

[0364] Select the main measurement "Between 2 points" and select the fourth intersection point CP14 and the second intersection point CP12. In this way, the third height H13 described above is calculated.

[0365] The calculation results of the dimensions of the wall surface 57 in Example A1 are shown in FIG. Figure 45 "Average", "Maximum" and "Minimum" respectively indicate the average, maximum and minimum values ​​of the 10 calculation results.

[0366] (Example A2)

[0367] As in Example A1, based on Figures 20 to 31 The manufacturing method shown in the figure produces a Figure 39 The mask 50 of the through hole group 53 is shown. The thickness T0 of the metal plate 55A is 26 μm. The material of the resin 63 is slightly soluble in the second etching solution. The dimensions of each component of the through hole group 53 are as follows.

[0368] Dimension R11 of the 11th side 581 of the first end 58: 62.0 μm

[0369] Dimension R12 of the 12th side 582 of the first end 58: 51.0 μm

[0370] First pitch P21 of the second end 59: 96.0 μm

[0371] Second pitch P22 of the second end 59: 96.0 μm

[0372] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50 in the same manner as in Example A1. The calculation results of the dimensions of the wall surface 57 in Example A2 are shown in FIG. Figure 45 .

[0373] (Example A3)

[0374] As in Example A1, based on Figures 20 to 31 The manufacturing method shown in the figure produces a Figure 43 Mask 50 with through-hole group 53 shown. Thickness T0 of metal plate 55A is 21 μm. The fourth direction E4, in which two 11th sides 581 of first end 58 of wall surface 57 of mask 50 face each other, is inclined 45 degrees relative to second direction E2. The third direction E3, in which two 12th sides 582 of first end 58 of wall surface 57 of mask 50 face each other, is inclined 45 degrees relative to first direction E1. The material of resin 63 is configured to be slightly soluble in the second etching solution. The dimensions and other aspects of the components of through-hole group 53 are described below.

[0375] Dimension R11 of the 11th side 581 of the first end 58: 38.0 μm

[0376] Dimension R12 of the 12th side 582 of the first end 58: 30.0 μm

[0377] First pitch P21 of the second end 59: 52.0 μm

[0378] Second pitch P22 of the second end 59: 52.0 μm

[0379] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50 in the same manner as in Example A1. The calculation results of the dimensions of the wall surface 57 in Example A3 are shown in FIG. Figure 45 .

[0380] (Example B1)

[0381] The mask 50 was manufactured in the same manner as in Example A1 except that the resin 63 having high resistance to the second etching solution was used. No groove was formed between the metal plate 55A and the resin 63 .

[0382] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50 in the same manner as in the case of Example A1. The calculation results of the dimensions of the wall surface 57 in Example B1 are shown in FIG. Figure 46 .

[0383] (Example B2)

[0384] The mask 50 was manufactured in the same manner as in Example A2 except that the resin 63 having high resistance to the second etching solution was used. No groove was formed between the metal plate 55A and the resin 63 .

[0385] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50 in the same manner as in Example A1. The calculation results of the dimensions of the wall surface 57 in Example B2 are shown in FIG. Figure 46 .

[0386] (Example B3)

[0387] The mask 50 was manufactured in the same manner as in Example A3 except that the resin 63 having high resistance to the second etching solution was used. No groove was formed between the metal plate 55A and the resin 63 .

[0388] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50 in the same manner as in Example A1. The calculation results of the dimensions of the wall surface 57 in Example B3 are shown in FIG. Figure 46 .

[0389] like Figure 46 As shown in FIG. 1 , when the resin 63 having high resistance to the second etching solution is used, S13 / S12 is 0.150 or more. On the other hand, when the resin 63 configured to be slightly soluble in the second etching solution is used, as shown in FIG. Figure 45 As shown, S13 / S12 is less than 0.120.

Claims

1. A mask comprising a plurality of through holes, characterized in that: The mask has: a metal plate including a first surface and a second surface located on the opposite side of the first surface in the thickness direction; and a wall surface facing the through hole, including a first end located on the first surface and a second end located on the opposite side of the first end in the thickness direction, The first end is located inwardly of the second end. The wall surface includes: a first wall surface located between a first imaginary point where a first imaginary straight line and the wall surface intersect and the first end; and a second wall surface located between the first imaginary point and the second end. The first imaginary straight line is an imaginary straight line passing through the first end and the second end. The first wall surface includes a portion located inside the first imaginary straight line. The wall surface has a second dimension, which is a distance in the in-plane direction of the first surface between a second imaginary point where a second imaginary straight line intersects the first surface and the first end. The second imaginary straight line is an imaginary straight line passing through the second end and extending in the thickness direction. The first wall surface has a third dimension, and the third dimension is the distance between the first imaginary straight line and the third imaginary straight line in the in-plane direction of the first surface. The third imaginary straight line is an imaginary straight line extending parallel to the first imaginary straight line and tangent to the first wall surface. A ratio of the third dimension to the second dimension is 0.120 or less.

2. The mask according to claim 1, wherein A ratio of the third dimension to the second dimension is equal to or greater than 0.

030.

3. The mask according to claim 1, wherein A third imaginary point, which is a point at which the third imaginary straight line is tangent to the first wall surface, is located outside the first end.

4. The mask according to claim 3, wherein The wall surface has a reference height, and the reference height is the distance between the first end and the second end in the thickness direction. A ratio of the second dimension to the reference height is 1.00 or less.

5. The mask according to claim 3, wherein The first wall surface includes: an 11th wall surface located between the third imaginary point and the first end; and a 12th wall surface located between the third imaginary point and the first imaginary point. The 11th wall surface includes a portion located inside the 7th imaginary straight line. The seventh imaginary straight line is an imaginary straight line passing through the first end and the third imaginary point. The mask according to claim 5 , wherein: The 12th wall surface includes the 3A2th imaginary point, The 3A2th imaginary point is an imaginary point where the 3Ath imaginary straight line intersects the 12th wall surface. The 3A imaginary straight line is an imaginary straight line obtained by shifting the third imaginary straight line inward by the first allowable error. The first allowable error is 0.10 μm. A ratio of a distance between the third imaginary point and the 3A2 imaginary point in the thickness direction to the first allowable error is greater than or equal to 1.

0.

7. The mask according to claim 1, wherein The wall surface has a third height, the third height being the distance between the first end and a third imaginary point in the thickness direction, the third imaginary point being a point at which the third imaginary straight line is tangent to the first wall surface, A ratio of the third dimension to the third height is 1.00 or less.

8. The mask according to any one of claims 1 to 7, wherein: The plurality of through holes are arranged in the first direction and the second direction in a plan view, The second size and the third size are determined in a cross section of the mask cut along a plane inclined at an angle of 45 degrees with respect to the first direction.

9. The mask according to claim 8, wherein The second end includes two 21st sides that are opposite to each other in the second direction, The two 21st sides each include a straight line portion.

10. The mask according to claim 9, wherein The plurality of through holes include a first through hole and a second through hole adjacent to the first through hole in the second direction. One of the 21st sides of the first through hole merges with one of the 21st sides of the first through hole.

11. The mask according to claim 10, wherein The wall surface has a confluence height, which is the distance between the first end and the confluence portion in the thickness direction, wherein the confluence portion is a confluence portion where one of the 21st sides of the first through hole and one of the 21st sides of the first through hole merge. A ratio of the junction height to the thickness of the metal plate is 0.50 or greater.

12. The mask according to claim 9, wherein The second end includes two 22nd sides that are opposite to each other in the first direction, The two 22nd sides each include a straight line portion.

13. The mask according to claim 12, wherein: The plurality of through holes include a first through hole and a third through hole adjacent to the first through hole in the first direction. The 22nd side of the first through hole merges with the 22nd side of the third through hole.

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