Wafer etching platform and etching equipment
By setting heat dissipation holes and heat dissipation channels on the base of the machine, and combining the design of the support feet, heat dissipation ring and heat conductive support seat, the problem of wafer platform deformation in high temperature and high humidity environment is solved, and the uniformity of wafer etching is achieved.
Patent Information
- Application Number
- CN202422625750.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-29
- Publication Date
- 2025-09-30
- Estimated Expiration
- 2034-10-29
AI Technical Summary
Existing wafer platforms are prone to deformation in high temperature and high humidity environments, resulting in poor wafer etching uniformity.
Heat dissipation holes and heat dissipation channels corresponding to the wafer placement slots are set on the machine base. The heat dissipation effect is improved through the support legs and heat dissipation rings, and heat is transferred in combination with the thermal conductive support seat to avoid material deformation.
Effective heat dissipation avoids deformation of the wafer placement table material and ensures uniformity of wafer etching.
Smart Images
Figure CN223401575U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of etching, in particular to a wafer etching platform and etching equipment. Background Art
[0002] With the rapid development of the semiconductor industry, wet etching processes typically utilize high-temperature phosphoric acid or sulfuric acid to etch the wafer surface, forming grooves and other processes. Currently, wafer platforms are often made of plasma-resistant materials (such as quartz and ceramics). However, long-term exposure to high-temperature and high-humidity environments can easily lead to material deformation, resulting in poor wafer platform flatness and impacting wafer etching uniformity. Utility Model Content
[0003] The purpose of the utility model is to provide an etching wafer, which can effectively dissipate heat from the wafer placement table during the etching process, thereby avoiding the flatness problem caused by deformation of the wafer placement table material due to high temperature, and ensuring the uniformity of wafer etching.
[0004] The embodiment of the present utility model is achieved as follows:
[0005] On the one hand, an embodiment of the present invention provides a wafer etching platform, including a machine base and a wafer placing table, wherein the wafer placing table is arranged on the machine base, and a wafer placing groove is provided on the side surface of the wafer placing table facing away from the machine base, and a heat dissipation hole is provided on the machine base, and the heat dissipation hole corresponds to the center of the wafer placing groove, and is used to dissipate heat for the wafer placing table.
[0006] In an optional embodiment, a plurality of legs are provided around the periphery of the wafer placement table, the top ends of the legs are connected to the edge of the wafer placement table, the bottom ends are connected to the machine base, and the legs are evenly distributed around the heat dissipation holes.
[0007] In an optional embodiment, there are three legs, and each leg extends inwardly from the outer periphery of the wafer placement table.
[0008] In an optional embodiment, a plurality of heat dissipation rings are further provided on the bottom side of the wafer placement table, and the plurality of heat dissipation rings are arranged between the plurality of support legs at intervals, and an edge of each heat dissipation ring is connected to the plurality of support legs.
[0009] In an optional embodiment, the outer diameters of the plurality of heat dissipation rings decrease successively in a direction approaching the heat dissipation hole, and the inner diameters of the plurality of heat dissipation rings are the same.
[0010] In an optional embodiment, the plurality of heat dissipation rings are all in a circular ring shape, and the plurality of heat dissipation rings are concentrically arranged, and the center of each heat dissipation ring corresponds to the center of the heat dissipation hole.
[0011] In an optional embodiment, a heat-conducting support seat is further provided on the machine base, which covers the heat dissipation holes and is connected to the wafer placement table to transfer heat on the wafer placement table to the heat dissipation holes.
[0012] In an optional embodiment, the thermally conductive support seat includes a base body and a thermally conductive support column, the base body is arranged on the machine base and covers the heat dissipation hole, one end of the thermally conductive support column is abutted against the bottom surface of the wafer placement table, and the other end is connected to the top of the base body, and the diameter of the thermally conductive support column is smaller than the diameter of the base body.
[0013] In an optional embodiment, a heat spreader is further provided on the bottom surface of the wafer placement table, and the heat conductive support column is connected to the center of the heat spreader.
[0014] On the other hand, the present invention provides an etching device, including a reaction chamber and the aforementioned wafer etching platform, wherein the wafer placement table and the machine base are both arranged in the reaction chamber, and the machine base is arranged on the bottom wall of the reaction chamber.
[0015] The beneficial effects of the embodiments of the present utility model are:
[0016] The wafer etching platform provided by the present invention has a wafer placement table mounted on a machine base, and is provided with a heat dissipation hole on the machine base. The heat dissipation hole corresponds to the center of the wafer placement slot and can be connected to an external heat dissipation channel, which can promptly remove the heat generated at the bottom of the wafer placement table and effectively dissipate heat from the wafer placement table. Compared with conventional integrated wafer placement tables, the present invention can effectively dissipate heat from the wafer placement table during the etching process through the heat dissipation holes on the machine base, thereby avoiding flatness problems caused by deformation of the wafer placement table material due to high temperature, and ensuring uniformity of wafer etching. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.
[0018] Figure 1A schematic diagram of the exploded structure of a wafer etching platform provided in an embodiment of the present invention;
[0019] Figure 2 A schematic structural diagram of a wafer etching platform provided by an embodiment of the present invention at a first viewing angle;
[0020] Figure 3 for Figure 2 Schematic diagram of the structure of the heat dissipation ring;
[0021] Figure 4 A schematic structural diagram of the wafer etching platform provided in an embodiment of the present invention at a second viewing angle.
[0022] icon:
[0023] 100-wafer etching platform; 110-machine base; 111-heat dissipation hole; 130-wafer placement table; 131-wafer placement slot; 150-support foot; 151-heat dissipation ring; 170-thermal bearing seat; 171-base body; 173-thermal support column. DETAILED DESCRIPTION
[0024] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.
[0025] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are also within the scope of protection of the present invention.
[0026] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.
[0027] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the utility model product is typically placed when in use. These terms are intended solely to facilitate the description of this utility model and to simplify the description, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0028] Furthermore, terms such as "horizontal" and "vertical" do not necessarily mean that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.
[0029] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.
[0030] As disclosed in the background technology, the wafer placement table in the prior art usually adopts an integrated structure and is placed on the bottom wall of the reaction chamber. During the etching process, the wafer placement table will take on the heat of the wafer and the high-temperature process liquid and gather it at the bottom. In the long run, this will cause the wafer placement table to be in a high-temperature / high-humidity working environment for a long time, which may easily cause material deformation and even lead to poor wafer flatness, affecting the flat placement of the wafer, and further affecting the uniformity of wafer etching.
[0031] See also Figures 1 to 4 In order to solve the above problems, the utility model provides a new type of etching wafer, which can effectively dissipate heat from the wafer placement table during the etching process, thereby avoiding the flatness problem caused by deformation of the wafer placement table material due to high temperature, and ensuring the uniformity of wafer etching.
[0032] An embodiment of the present invention provides a wafer etching platform 100, which includes a machine base 110 and a wafer placement platform 130. The wafer placement platform 130 is arranged on the machine base 110, and a wafer placement groove 131 is provided on the side surface of the wafer placement platform 130 facing away from the machine base 110. A heat dissipation hole 111 is provided on the machine base 110, and the heat dissipation through hole is connected to an external heat dissipation channel. The heat dissipation hole 111 corresponds to the center of the wafer placement groove 131 and is used to dissipate heat for the wafer placement platform 130.
[0033] The present invention fully realizes heat dissipation through the heat dissipation holes 111 on the machine base 110, and the heat dissipation holes 111 can be connected to the external heat dissipation channel, so that the wafer placement table 130 can be effectively cooled during the etching process, thereby avoiding the flatness problem caused by deformation of the wafer placement table 130 material due to high temperature, and ensuring the uniformity of wafer etching.
[0034] In this embodiment, the wafer placement table 130 is circular, and the wafer placement groove 131 is located in the middle of the top surface of the wafer placement table 130. The size and shape of the wafer placement groove 131 are adapted to the size and shape of the wafer. Preferably, the depth of the wafer placement groove 131 is less than the thickness of the wafer, which can make the wafer relatively protrude from the wafer placement table 130, which is more conducive to wafer thinning and etching.
[0035] In this embodiment, a plurality of legs 150 are provided around the periphery of the wafer placement table 130. The top ends of the plurality of legs 150 are connected to the edge of the wafer placement table 130, and the bottom ends are joined to the machine base 110. The legs 150 are evenly distributed around the heat dissipation holes 111. Specifically, the top ends of the plurality of legs 150 are integrally connected to the outer edge of the wafer placement table 130, and the bottom ends of the plurality of legs 150 are in the same horizontal plane and abut against the surface of the machine base 110, thereby supporting the wafer placement table 130. The bottom ends of the legs 150 can be fixed to the machine base 110, or the legs 150 can be directly placed on the machine base 110. No specific limitation is made here. By providing a plurality of legs 150, a larger heat dissipation space can be formed on the bottom side of the wafer placement table 130. The heat dissipation space is dissipated through the heat dissipation holes 111 at the bottom, further improving the heat dissipation effect.
[0036] In this embodiment, there are three legs 150, each extending inwardly from the outer periphery of the wafer placement platform 130. Specifically, the three legs 150 are evenly distributed along the edge of the wafer placement platform 130 and extend inwardly. This arrangement allows the legs 150 to be confined to the inner side of the wafer placement platform 130, preventing them from being corroded during the etching process. Of course, the number of legs 150 is merely illustrative and does not constitute a limitation.
[0037] In this embodiment, a plurality of heat dissipation rings 151 are further provided on the bottom side of the wafer placement table 130. The plurality of heat dissipation rings 151 are spaced apart between the plurality of legs 150, and the edge of each heat dissipation ring 151 is connected to the plurality of legs 150. Specifically, the plurality of heat dissipation rings 151 are parallel to each other and spaced apart, and each heat dissipation ring 151 is fixedly connected to three legs 150. Thus, the use of the plurality of heat dissipation rings 151 can further enhance the structural support effect of the legs 150 and enhance the structural strength of the legs 150. There can also be three heat dissipation rings 151, which are evenly distributed on the bottom side of the wafer placement table 130. The number of heat dissipation rings 151 here is merely an example and does not serve any limiting purpose.
[0038] It should be noted that the heat dissipation ring 151 here can be made of a material with good thermal conductivity, such as ceramic. By arranging multiple heat dissipation rings 151 at intervals, the heat dissipation effect on the bottom side of the wafer placement table 130 can be greatly improved.
[0039] In this embodiment, the outer diameters of the heat dissipation rings 151 decrease gradually as they approach the heat dissipation holes 111, and the inner diameters of the heat dissipation rings 151 are the same. Specifically, because the legs 150 extend inward at an angle, and the outer edges of the heat dissipation rings 151 are fixedly connected to the legs 150, the diameters of the heat dissipation rings 151 decrease from top to bottom to ensure a secure connection.
[0040] In this embodiment, the multiple heat dissipation rings 151 are all annular and concentrically arranged, with the center of each heat dissipation ring 151 corresponding to the center of the heat dissipation hole 111. The multiple heat dissipation rings 151 have the same inner diameter and are concentrically arranged, thereby forming a connected heat dissipation channel. This heat dissipation channel corresponds to the heat dissipation hole 111, which can reduce the heat transfer path and improve heat dissipation efficiency.
[0041] Furthermore, a heat-conducting support 170 is provided on the machine base 110. The heat-conducting support 170 covers the heat dissipation holes 111 and is connected to the wafer placement table 130. It is used to transfer heat from the wafer placement table 130 to the heat dissipation holes 111. Specifically, the heat-conducting support 170 is made of a material with good thermal conductivity, which can collect heat and discharge it through the heat dissipation holes 111. The heat-conducting support 170 can also cover the heat dissipation holes 111 to achieve gas isolation, preventing gas or liquid in the reaction chamber from directly flowing out through the heat dissipation holes 111 to the outside space.
[0042] In this embodiment, the heat-conducting support base 170 includes a base body 171 and heat-conducting support columns 173. The base body 171 is disposed on the machine base 110 and covers the heat dissipation holes 111. One end of the heat-conducting support column 173 abuts against the bottom surface of the wafer placement table 130, and the other end is connected to the top of the base body 171. The diameter of the heat-conducting support column 173 is smaller than the diameter of the base body 171. Specifically, the base body 171 is cylindrical and disposed on the machine base 110 around the heat dissipation holes 111. The heat-conducting support column 173 is integrally disposed at the top of the base body 171. The inner diameter of the heat dissipation ring 151 is larger than the outer diameter of the base body 171, so that the base body 171 can pass through the heat dissipation ring 151 at the bottom. The heat-conducting support column 173 can support the wafer placement table 130 and transfer ambient heat to the base body 171 and the heat dissipation holes 111 to achieve heat dissipation.
[0043] Furthermore, a vapor chamber is provided on the bottom surface of the wafer placement platform 130, with a thermal support column 173 connected to the center of the vapor chamber. Specifically, the thermal support column 173 is integrally provided with the vapor chamber and can be made of a material with good thermal conductivity. The thermal support column 173 is connected to the center of the vapor chamber, which allows for uniform heat transfer using the vapor chamber. The vapor chamber can also provide uniform support for the wafer placement platform 130, ensuring that the wafer placement platform 130 is evenly stressed.
[0044] The present invention also provides an etching device, including a reaction chamber and the aforementioned wafer etching platform 100, wherein the wafer etching platform 100 includes a machine base 110 and a wafer placement platform 130, wherein the wafer placement platform 130 is disposed on the machine base 110, and a wafer placement groove 131 is disposed on a side surface of the wafer placement platform 130 facing away from the machine base 110, and a heat dissipation hole 111 is disposed on the machine base 110, wherein the heat dissipation through-hole is connected to an external heat dissipation channel, and the heat dissipation hole 111 corresponds to the center of the wafer placement groove 131 and is used to dissipate heat from the wafer placement platform 130. The wafer placement platform 130 and the machine base 110 are both disposed in the reaction chamber, and the machine base 110 is disposed on the bottom wall of the reaction chamber.
[0045] The bottom wall of the reaction chamber is provided with a heat dissipation channel connected to the outside. The machine base 110 is provided on the bottom wall of the reaction chamber, and the heat dissipation holes 111 are connected to the heat dissipation channel to achieve heat dissipation.
[0046] In summary, the wafer etching platform 100 and etching equipment provided by the embodiment of the present invention sets the wafer placement table 130 on the machine base 110, and is provided with a heat dissipation hole 111 on the machine base 110. The heat dissipation hole 111 corresponds to the center of the wafer placement groove 131 and can be connected to an external heat dissipation channel, which can promptly remove the heat generated at the bottom of the wafer placement table 130 and effectively dissipate heat for the wafer placement table 130. Compared with the conventional integrated wafer placement table 130, the present invention can effectively dissipate heat for the wafer placement table 130 during the etching process through the heat dissipation hole 111 on the machine base 110, thereby avoiding the flatness problem caused by deformation of the wafer placement table 130 material due to high temperature, and ensuring the uniformity of wafer etching.
[0047] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.
Claims
1. A wafer etching platform, characterized in that: It includes a machine base and a wafer placement table. The wafer placement table is arranged on the machine base, and a wafer placement groove is provided on the side surface of the wafer placement table away from the machine base. A heat dissipation hole is provided on the machine base. The heat dissipation hole corresponds to the center of the wafer placement groove and is connected to an external heat dissipation channel for dissipating heat to the wafer placement table.
2. The wafer etching platform according to claim 1, characterized in that: A plurality of legs are provided on the periphery of the wafer placement table, the top ends of the legs are connected to the edge of the wafer placement table, the bottom ends are connected to the machine base, and the legs are evenly distributed around the heat dissipation holes.
3. The wafer etching platform according to claim 2, characterized in that: There are three supporting legs, and each supporting leg extends inwardly from the outer periphery of the wafer placement table.
4. The wafer etching platform according to claim 2, characterized in that: A plurality of heat dissipation rings are further provided on the bottom side of the wafer placement table. The plurality of heat dissipation rings are arranged between the plurality of support legs at intervals, and the edge of each heat dissipation ring is connected to the plurality of support legs.
5. The wafer etching platform according to claim 4, characterized in that: The outer diameters of the plurality of heat dissipation rings decrease in sequence along a direction approaching the heat dissipation hole, and the inner diameters of the plurality of heat dissipation rings are the same.
6. The wafer etching platform according to claim 4, characterized in that: The plurality of heat dissipation rings are all in a circular ring shape, and the plurality of heat dissipation rings are concentrically arranged, and the center of each heat dissipation ring corresponds to the center of the heat dissipation hole.
7. The wafer etching platform according to claim 1, characterized in that: A heat-conducting support seat is also provided on the machine base. The heat-conducting support seat is covered on the heat dissipation hole and connected to the wafer placement table for transferring heat on the wafer placement table to the heat dissipation hole.
8. The wafer etching platform according to claim 7, characterized in that: The thermally conductive support seat includes a base body and a thermally conductive support column. The base body is arranged on the machine base and covers the heat dissipation hole. One end of the thermally conductive support column is against the bottom surface of the wafer placement table, and the other end is connected to the top of the base body, and the diameter of the thermally conductive support column is smaller than the diameter of the base body.
9. The wafer etching platform according to claim 8, characterized in that: A heat spreader is further provided on the bottom surface of the wafer placement table, and the heat conductive support column is connected to the center of the heat spreader.
10. An etching device, characterized in that: It comprises a reaction chamber and a wafer etching platform as described in any one of claims 1 to 9, wherein the wafer placement table and the machine base are both arranged in the reaction chamber, and the machine base is arranged on the bottom wall of the reaction chamber.