Plasma cleaning cavity and cleaning equipment

Abstract

The utility model provides a plasma cleaning cavity and cleaning equipment, and relates to the technical field of semiconductor equipment. The plasma cleaning cavity comprises an upper cover, a cavity body, a placement table, a first heating disc, a second heating disc and a heat conduction piece. The cavity is provided with an opening, and the upper cover is connected with the cavity to seal the opening. The placing table is used for bearing a wafer; the placing table is arranged in the cavity. The first heating disc is arranged in the cavity and located on the side, away from the upper cover, of the containing table. The second heating disc is arranged in the cavity and located on the side, away from the upper cover, of the containing table. The first heating disc and the second heating disc are arranged at intervals. The heat conduction piece is arranged between the first heating disc and the second heating disc. According to the plasma cleaning cavity, the placement table is uniformly heated, and the cleaning quality can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a plasma cleaning chamber and cleaning equipment. Background Art

[0002] With the rapid development of the semiconductor industry, trace contaminants such as silicon oxide, aluminum oxide, and organic matter from the polishing solution still adhere to the wafer surface after polishing or coating processes. These contaminants need to be removed through plasma cleaning. During the cleaning process, the wafer is heated to increase the activity of the contaminants, and then a special gas is used for cleaning.

[0003] In existing cleaning chambers, heat conduction is used to heat the wafer placement platform. However, due to the linear contact characteristics of the heating rods, the placement platform is not heated evenly, resulting in low heat conduction efficiency and uneven heating, which affects the cleaning effect. Utility Model Content

[0004] The purpose of the utility model is to provide a plasma cleaning chamber and cleaning equipment, which are beneficial to improving the heating uniformity of the placement table, thereby improving the cleaning effect.

[0005] In a first aspect, the present invention provides a plasma cleaning chamber, comprising:

[0006] Upper cover;

[0007] a cavity having an opening, and the upper cover is connected to the cavity to close the opening;

[0008] A placement table, the placement table is used to carry the wafer; the placement table is arranged in the cavity;

[0009] a first heating plate disposed in the cavity and located on a side of the placement table away from the upper cover;

[0010] a second heating tray, the second heating tray being disposed in the cavity and located on a side of the placement table away from the upper cover; the first heating tray and the second heating tray being spaced apart;

[0011] A heat conducting member is provided between the first heating plate and the second heating plate.

[0012] In an optional embodiment, the first heating plate is provided with a first heat dissipation hole, and the second heating plate is provided with a second heat dissipation hole corresponding to the first heat dissipation hole.

[0013] In an optional embodiment, a third heat dissipation hole is provided on the heat conducting member, and the third heat dissipation hole is respectively connected to the first heat dissipation hole and the second heat dissipation hole.

[0014] In an optional embodiment, a projected area of ​​the heat conducting member on the upper cover is smaller than a projected area of ​​the first heating plate or the second heating plate on the upper cover.

[0015] In an optional embodiment, the heat conducting member includes a first heat conducting pad, and the first heat conducting pad includes a plurality of heat dissipating fins uniformly arranged along the circumference.

[0016] In an optional embodiment, the heat conducting member includes a first heat conducting pad and a second heat conducting pad, and the first heat conducting pad is provided with the third heat dissipation hole.

[0017] In an optional embodiment, the cavity is provided with a positioning groove, and the first heating plate and the second heating plate are respectively provided with a first positioning protrusion that is plugged into and cooperates with the positioning groove.

[0018] In an optional embodiment, the heat conducting member is provided with a second positioning protrusion that is plugged into and fits with the positioning groove, and the upper cover is provided with a third positioning protrusion that is plugged into and fits with the positioning groove.

[0019] In an optional embodiment, the upper cover is provided with a spray hole.

[0020] In a second aspect, the present invention provides a cleaning device, comprising a machine platform and a plasma cleaning chamber according to any one of the aforementioned embodiments. The plasma cleaning chamber is mounted on the machine platform.

[0021] The plasma cleaning chamber provided in the embodiment of the present invention heats the placement table through the first heating plate, the second heating plate and the heat conducting member, with high heat conduction efficiency and uniform heating, so that the placement table and the wafer on the placement table are heated evenly, so that the contaminants on the surface of the wafer can be cleaned more thoroughly and the cleaning effect is better.

[0022] The cleaning equipment provided by the embodiment of the present invention adopts the above-mentioned plasma cleaning chamber, the placement table is heated evenly, the wafer is cleaned more thoroughly and more cleanly, and the cleaning efficiency and cleaning quality are improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 A schematic diagram of the structure of the plasma cleaning chamber after the upper cover is disassembled according to an embodiment of the present invention;

[0025] Figure 2 A schematic diagram of the split structure of the plasma cleaning chamber provided in an embodiment of the present utility model;

[0026] Figure 3 A schematic diagram of an exploded structure of a plasma cleaning chamber provided in an embodiment of the present invention;

[0027] Figure 4 This is a schematic diagram of another structure exploded within the plasma cleaning chamber provided in an embodiment of the present invention;

[0028] Figure 5 A schematic structural diagram of the upper cover of the plasma cleaning chamber provided in an embodiment of the present utility model.

[0029] Icons: 100-plasma cleaning chamber; 110-upper cover; 111-third positioning bump; 112-spray hole; 113-inlet end; 120-chamber; 121-positioning groove; 130-placement table; 131-fourth positioning bump; 140-first heating plate; 141-first heat dissipation hole; 143-first positioning bump; 150-second heating plate; 151-second heat dissipation hole; 160-heat conducting element; 161-third heat dissipation hole; 163-first thermal pad; 165-second thermal pad; 167-second positioning bump; 200-wafer. DETAILED DESCRIPTION

[0030] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0031] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are also within the scope of protection of the present invention.

[0032] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0033] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the utility model product is typically placed when in use. These terms are intended solely to facilitate the description of this utility model and to simplify the description, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0034] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0035] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0036] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.

[0037] The plasma cleaning chamber provided by the embodiment of the present invention can be used to remove pollutants on the surface of a wafer.

[0038] Combine Figures 1 to 3The plasma cleaning chamber 100 includes an upper cover 110, a cavity 120, a placement table 130, a first heating plate 140, a second heating plate 150 and a heat conductor 160. The cavity 120 has an opening, and the upper cover 110 is connected to the cavity 120 to close the opening. The placement table 130 is used to carry the wafer 200; the placement table 130 is arranged in the cavity 120. The first heating plate 140 is arranged in the cavity 120 and is located on the side of the placement table 130 away from the upper cover 110. The second heating plate 150 is arranged in the cavity 120 and is located on the side of the placement table 130 away from the upper cover 110; the first heating plate 140 and the second heating plate 150 are spaced apart. The heat conductor 160 is arranged between the first heating plate 140 and the second heating plate 150. The plasma cleaning chamber 100 heats the placement table 130 through the first heating plate 140, the second heating plate 150 and the heat conductor 160, with high heat conduction efficiency and uniform heating, so that the placement table 130 and the wafer 200 on the placement table 130 are evenly heated, so that the contaminants on the surface of the wafer 200 can be cleaned more thoroughly and the cleaning effect is better.

[0039] Optionally, the first heating plate 140 is provided with first heat dissipation holes 141, and the second heating plate 150 is provided with second heat dissipation holes 151 corresponding to the first heat dissipation holes 141. The plurality of first heat dissipation holes 141 are evenly distributed on the first heating plate 140, such as in a circular array or a matrix. Similarly, the plurality of second heat dissipation holes 151 are evenly distributed on the second heating plate 150, such as in a circular array or a matrix. The cross-sections of the first heat dissipation holes 141 and the second heat dissipation holes 151 can be circular, elliptical, semicircular, crescent-shaped, triangular, quadrilateral, pentagonal, hexagonal, or any other arbitrary shape.

[0040] In this embodiment, the first heat dissipation holes 141 and the second heat dissipation holes 151 are arranged opposite to each other, which can make the heat transfer efficiency higher and the hot air flow more sufficient, so that the entire placement platform 130 is heated more evenly.

[0041] Optionally, the heat conducting member 160 is provided with a third heat dissipation hole 161, which is in communication with the first heat dissipation hole 141 and the second heat dissipation hole 151, respectively. The heat conducting member 160 is used to achieve heat transfer. In this embodiment, the first heating plate 140 is closer to the placement table 130 than the second heating plate 150. The heat conducting member 160 is used to transfer heat from the second heating plate 150 to the first heating plate 140, thereby heating the placement table 130 more evenly.

[0042] Optionally, the projected area of ​​the heat conductor 160 on the upper cover 110 is smaller than the projected area of ​​the first heating plate 140 or the second heating plate 150 on the upper cover 110. In this embodiment, the sizes of the first heating plate 140 and the second heating plate 150 are roughly equal. And the sizes of the first heating plate 140 and the second heating plate 150 are roughly equal to the sizes of the placement table 130. That is, the size of the heat conductor 160 is smaller than the size of the first heating plate 140, so that there is a certain gap between the first heating plate 140 and the second heating plate 150. Increasing the distance between the first heating plate 140 and the second heating plate 150 can facilitate the flow of hot air, which is beneficial to improving the heating efficiency and heating uniformity. After cleaning is completed, it is also beneficial to rapid heat dissipation and high heat exchange efficiency.

[0043] Optionally, the heat conducting member 160 includes a first thermal pad 163, and the first thermal pad 163 includes a plurality of heat sinks uniformly arranged along the circumference. In this embodiment, the first thermal pad 163 includes two fan-shaped heat sinks. The two heat sinks are symmetrically arranged about the central axis of the cavity 120. Each heat sink is provided with a third heat dissipation hole 161. The third heat dissipation hole 161 can be arranged opposite to the first heat dissipation hole 141 and the second heat dissipation hole 151, respectively, so that the hot air flows more smoothly. Optionally, the shape of the heat sink in the first thermal pad 163 can also be circular, elliptical, semicircular, crescent, triangular, quadrilateral, pentagonal, hexagonal or any other arbitrary shape. The number of heat sinks can also be one, three, four, five or more, which is not specifically limited here.

[0044] Of course, in some other embodiments, the size of the heat conducting member 160 may be substantially equal to the size of the first heating plate 140. Heat flows to the placement table 130 through the third heat dissipation holes 161 on the heat conducting member 160, which is not specifically limited here.

[0045] Combine Figure 4 Optionally, the heat conducting member 160 includes a first heat conducting pad 163 and a second heat conducting pad 165, and the first heat conducting pad 163 and / or the second heat conducting pad 165 is provided with a third heat dissipation hole 161. It can be understood that the first heat conducting pad 163 is provided with a third heat dissipation hole 161. Alternatively, the second heat conducting pad 165 is provided with a third heat dissipation hole 161. Alternatively, the first heat conducting pad 163 and the second heat conducting pad 165 are respectively provided with a third heat dissipation hole 161. In this embodiment, the first heat conducting pad 163 and the second heat conducting pad 165 respectively include two symmetrically arranged fan-shaped heat dissipation fins. Among them, the two heat dissipation fins in the first heat conducting pad 163 are respectively provided with a third heat dissipation hole 161.

[0046] It should be noted that in some embodiments, the third heat dissipation holes 161 on the heat conducting member 160 can be omitted, that is, the heat conducting member 160 can be designed as a solid structure to achieve effective heat transfer. This is not specifically limited here. The heat conducting member 160 can be made of materials such as ceramic or mica. Optionally, the first heating plate 140 and the second heating plate 150 can be made of materials such as ceramic or mica.

[0047] Optionally, the cavity 120 is provided with a positioning groove 121, and the first heating plate 140 and the second heating plate 150 are each provided with a first positioning protrusion 143 that plugs into the positioning groove 121. It should be noted that the cavity 120 contains the first heating plate 140, the second heating plate 150, the heat conducting member 160, and the placement table 130. The sum of the thicknesses of the first heating plate 140, the second heating plate 150, the heat conducting member 160, and the placement table 130 is less than the inner height of the cavity 120. For ease of installation, the inner wall of the cavity 120 is provided with a positioning groove 121 extending in the height direction, and the first positioning protrusions 143 on the first heating plate 140 and the second heating plate 150 are both located in this positioning groove. The cross-sectional shape of the first positioning protrusion 143 is compatible with the cross-sectional shape of the positioning groove 121. The first heating plate 140 and the second heating plate 150 are respectively plugged into each other to achieve fixed installation within the cavity 120. Moreover, the installation method is a detachable connection method, which is convenient for later maintenance, repair and replacement.

[0048] Optionally, a fourth positioning protrusion 131 that is plugged into and engaged with the positioning groove 121 is provided on the placement platform 130 .

[0049] Combine Figure 5 Optionally, the heat conductor 160 is provided with a second positioning protrusion 167 that plugs into the positioning groove 121, and the upper cover 110 is provided with a third positioning protrusion 111 that plugs into the positioning groove 121. Accordingly, the heat conductor 160 is installed in the cavity 120 in a plug-in fixed manner. The upper cover 110 is also installed in the cavity 120 in a plug-in fixed manner. This installation method is simple, easy to operate, and also facilitates subsequent maintenance and replacement.

[0050] In this embodiment, the cavity 120 has four positioning grooves 121 evenly distributed along the circumference. The specific number and cross-sectional shape of the positioning grooves 121 can be flexibly adjusted according to actual needs and are not specifically limited here. Of course, the cavity 120 can also be provided with positioning grooves 121 of various shapes or positions to respectively connect with the first heating plate 140, the second heating plate 150, the heat conducting member 160, the placement table 130, and the upper cover 110, which are not specifically limited here.

[0051] Alternatively, in some embodiments, the positioning groove 121 can also be provided on the first heating plate 140, the second heating plate 150, the heat conductor 160, the placement table 130 and the upper cover 110, and the positioning protrusion is provided on the inner wall of the cavity 120, which can also achieve similar plug-in fit, and no specific limitation is given here.

[0052] Optionally, the upper cover 110 is provided with spray holes 112. Spray holes 112 are located on the side of the upper cover 110 facing the placement platform 130. Spray holes 112 are used to spray cleaning liquid or cleaning gas onto the surface of the wafer 200 on the placement platform 130. Multiple spray holes 112 are evenly spaced to improve cleaning efficiency and cleaning quality.

[0053] Optionally, an inlet port 113 is further provided on a side of the upper cover 110 away from the placement platform 130, and the inlet port 113 is connected to the spray holes 112. An external cleaning gas source is connected to the inlet port 113, and the gas is distributed through the inlet port 113 to be sprayed out of each spray hole 112.

[0054] An embodiment of the present invention also provides a cleaning device, comprising a machine and a plasma cleaning chamber 100 of any one of the aforementioned embodiments. The plasma cleaning chamber 100 is fixed on the machine. Optionally, the plasma cleaning chamber 100 also includes a cleaning agent and a heating source. The cleaning agent includes but is not limited to a cleaning gas or liquid to rinse the surface of the wafer 200. In this embodiment, the cleaning agent uses a gas, such as at least one or more mixed gases of oxygen, argon, nitrogen, carbon dioxide, hydrogen and carbon tetrafluoride. The heating source can be a power supply, etc., which is respectively connected to the first heating disk 140 and the second heating disk 150 to achieve electric heating of the placement table 130. Of course, in some other embodiments, other heating methods can also be used, which are not specifically limited here.

[0055] The plasma cleaning chamber 100 and cleaning equipment provided by the embodiment of the present invention work as follows:

[0056] The second heating plate 150, heat conducting member 160, first heating plate 140, and placement table 130 are sequentially installed in the chamber 120. The wafer 200 is placed on the placement table 130 and the upper cover 110 is closed. The power is turned on to heat the placement table 130. After heating to the preset temperature, the air supply is turned on to clean the contaminants on the surface of the wafer 200.

[0057] In summary, the plasma cleaning chamber 100 and cleaning equipment provided by the embodiment of the present invention have the following beneficial effects, including:

[0058] The plasma cleaning chamber 100 provided in the embodiment of the present invention heats the placement table 130 through the first heating plate 140, the second heating plate 150 and the heat conductor 160, with high heat conduction efficiency and uniform heating, so that the placement table 130 and the wafer 200 on the placement table 130 are heated evenly, so that the contaminants on the surface of the wafer 200 can be cleaned more thoroughly and the cleaning effect is better.

[0059] The cleaning equipment provided by the embodiment of the present invention adopts the above-mentioned plasma cleaning chamber 100, and the placement table 130 is heated evenly, so that the wafer 200 is cleaned more thoroughly and more cleanly, thereby improving the cleaning efficiency and cleaning quality.

[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some or all of the technical features therein. Any modifications, equivalent replacements, improvements, etc. made should be included in the scope of protection of the present invention.

Claims

1. A plasma cleaning chamber, characterized in that: include: Upper cover; a cavity having an opening, and the upper cover is connected to the cavity to close the opening; A placement table, the placement table is used to carry wafers; The placement platform is arranged in the cavity; a first heating plate disposed in the cavity and located on a side of the placement table away from the upper cover; a second heating tray, the second heating tray being disposed in the cavity and located on a side of the placement table away from the upper cover; the first heating tray and the second heating tray being spaced apart; A heat conducting member is provided between the first heating plate and the second heating plate.

2. The plasma cleaning chamber according to claim 1, characterized in that: The first heating plate is provided with a first heat dissipation hole, and the second heating plate is provided with a second heat dissipation hole corresponding to the first heat dissipation hole.

3. The plasma cleaning chamber according to claim 2, characterized in that: The heat conducting member is provided with a third heat dissipation hole, and the third heat dissipation hole is communicated with the first heat dissipation hole and the second heat dissipation hole respectively.

4. The plasma cleaning chamber according to claim 1, characterized in that: The projected area of ​​the heat conducting member on the upper cover is smaller than the projected area of ​​the first heating plate or the second heating plate on the upper cover.

5. The plasma cleaning chamber according to claim 4, characterized in that: The heat conducting member includes a first heat conducting pad, and the first heat conducting pad includes a plurality of heat dissipating fins uniformly arranged along the circumference.

6. The plasma cleaning chamber according to claim 3, characterized in that: The heat conducting member includes a first heat conducting pad and a second heat conducting pad, and the first heat conducting pad is provided with the third heat dissipation hole.

7. The plasma cleaning chamber according to claim 1, characterized in that: The cavity is provided with a positioning groove, and the first heating plate and the second heating plate are respectively provided with a first positioning protrusion that is plugged into and matched with the positioning groove.

8. The plasma cleaning chamber according to claim 7, characterized in that: The heat conducting member is provided with a second positioning protrusion which is plugged and matched with the positioning groove, and the upper cover is provided with a third positioning protrusion which is plugged and matched with the positioning groove.

9. The plasma cleaning chamber according to any one of claims 1 to 8, characterized in that: The upper cover is provided with a spray hole.

10. A cleaning device, characterized in that: The invention comprises a machine platform and the plasma cleaning chamber according to any one of claims 1 to 9, wherein the plasma cleaning chamber is installed on the machine platform.

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