Gas-assisted ultrasonic wafer cleaning device
By introducing gas assistance and impeller rotation turbulence into the ultrasonic wafer cleaning device, combined with elastic ropes to restrict the wafer, the problems of cleaning dead corners and re-adhesion of pollutants are solved, achieving efficient wafer cleaning effects and convenient operation.
Patent Information
- Application Number
- CN202422461067.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-12
- Publication Date
- 2025-10-03
- Estimated Expiration
- 2034-10-12
AI Technical Summary
Existing ultrasonic wafer cleaning devices have problems such as cleaning dead corners, insufficient cleaning liquid flow, and re-adhesion of contaminants, which affect the cleaning effect.
An ultrasonic source is installed at the bottom of the cleaning tank, and gas assistance is introduced through the air inlet pipe. Combined with the rotation of the impeller, turbulence is generated to enhance the fluidity of the cleaning liquid and the distribution of bubbles. Elastic ropes are used to limit the position of the wafer and optimize the cleaning path.
It significantly improves wafer cleaning efficiency, prevents re-adhesion of contaminants, simplifies operating procedures, and improves equipment convenience and maintainability.
Smart Images
Figure CN223405529U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of wafer cleaning technology, and in particular to a gas-assisted ultrasonic wafer cleaning device. Background Art
[0002] After laser cleavage, tiny particles and contaminants are likely to remain on the wafer. These tiny particles and contaminants can have a significant impact on subsequent production processes and final product quality, so wafer cleaning is necessary.
[0003] The conventional cleaning process involves placing wafers in a cleaning tank. This tank contains a specially formulated cleaning solution and utilizes ultrasonic cleaning technology to enhance cleaning effectiveness. Ultrasonic cleaning generates high-frequency sound waves, which rapidly form and collapse tiny bubbles in the cleaning solution (cavitation effect), generating tiny shock waves that strip and remove particles and contaminants from the wafer surface.
[0004] In ultrasonic cleaning, the ultrasonic source is typically placed at the bottom of the cleaning tank for device stability. The propagation and reflection of sound waves within the tank can interfere with each other, resulting in insufficient cleaning intensity in certain areas and the formation of dead corners, thus reducing overall cleaning effectiveness. Furthermore, insufficient flow of the cleaning fluid within the tank can cause contaminants to reattach to the wafer surface after being stripped, compromising cleaning effectiveness. Utility Model Content
[0005] In order to solve the above problems, the utility model provides a gas-assisted ultrasonic wafer cleaning device, including a cleaning tank and an ultrasonic source, the ultrasonic source is placed at the bottom of the cleaning tank, the cleaning liquid is placed in the cleaning tank, the impeller is fixedly connected to the side of the cleaning tank through a connecting device, the impeller is placed in the cleaning liquid, an air inlet is provided on the side of the cleaning tank, an air inlet is provided through the air inlet, the end face of the air inlet pipe is close to the impeller, and the air intake direction of the air inlet pipe coincides with the normal direction of the impeller.
[0006] This utility model combines ultrasonic cleaning with gas assistance to achieve a more efficient cleaning process. The ultrasonic source is placed at the bottom of the cleaning tank, and the cavitation effect of the ultrasonic wave is used to remove tiny particles and contaminants on the surface of the wafer. The impeller is fixed to the side of the cleaning tank by a connecting device and placed in the cleaning liquid. When it rotates, it enhances the fluidity of the cleaning liquid and prevents the re-attachment of contaminants. The air inlet on the side of the cleaning tank introduces gas through the air inlet pipe, and the air inlet direction coincides with the normal direction of the impeller, ensuring that the gas is evenly distributed in the cleaning liquid, producing a stronger cavitation effect, thereby significantly improving the cleaning effect.
[0007] Furthermore, the air intake direction of the air intake pipe is horizontal.
[0008] Furthermore, outside the cleaning tank, an adjusting valve is provided on the air inlet pipe.
[0009] Furthermore, the impeller is equipped with micro-bumps. These micro-bumps create a stronger turbulence effect during impeller rotation, helping to evenly distribute and flow the cleaning liquid within the cleaning tank, avoiding blind spots. Furthermore, the micro-bumps increase the dispersion of bubbles in the cleaning liquid, ensuring a more uniform distribution of bubbles, thereby enhancing the ultrasonic cavitation effect. Furthermore, the micro-bumps promote the formation and collapse of bubbles, further improving cleaning efficiency.
[0010] Furthermore, the invention also includes a limiting device, which is placed in the cleaning tank and is used to limit the wafer.
[0011] Furthermore, the limiting device is an elastic rope.
[0012] Furthermore, there are multiple parallel elastic ropes, and two adjacent elastic ropes form a group. During cleaning, the wafer is placed between the two adjacent elastic ropes.
[0013] Furthermore, the elastic cord is oriented along the normal to the impeller. This orientation guides the cleaning fluid and bubbles more evenly across the wafer surface, improving bubble distribution and enhancing the ultrasonic cavitation effect, further improving cleaning effectiveness. Furthermore, the elastic cord's orientation optimizes the cleaning fluid's flow path, ensuring it fully engages and removes contaminants as it passes over the wafer surface, thereby improving overall cleaning efficiency.
[0014] Beneficial effects of the utility model:
[0015] (1) The utility model places the ultrasonic source at the bottom of the cleaning tank and introduces gas assistance, combined with the turbulence generated by the rotation of the impeller, eliminates the standing wave effect, significantly enhances the fluidity of the cleaning liquid and the distribution of bubbles, and improves the cavitation effect of the ultrasonic wave, thereby greatly improving the wafer cleaning efficiency and cleaning effect.
[0016] (2) The elastic rope limiting device in the present invention can stabilize the position of the wafer during the cleaning process and absorb vibration and impact to prevent the wafer from moving or being damaged during the cleaning process.
[0017] (3) The design of the elastic rope along the normal direction of the impeller in the utility model optimizes the flow path of the cleaning liquid, ensures the uniform distribution of the cleaning liquid and the effective removal of pollutants, and simplifies the placement and removal process of the wafer, thereby improving the operation convenience and maintainability of the equipment.
[0018] In view of the above beneficial effects, the utility model has good application prospects in the field of wafer cleaning technology. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1A schematic diagram of a gas-assisted ultrasonic wafer cleaning device.
[0020] In the figure: 1. Cleaning tank; 2. Ultrasonic source; 3. Air inlet pipe; 4. Impeller. DETAILED DESCRIPTION
[0021] In order to make the objectives, technical solutions and advantages of this application more clear, the application is further described in detail below with reference to the accompanying drawings and examples.
[0022] The utility model provides a gas-assisted ultrasonic wafer cleaning device, such as Figure 1 As shown, the apparatus comprises a cleaning tank 1, an ultrasonic source 2, an air inlet pipe 3, and an impeller 4. The cleaning tank 1 is rectangular. The ultrasonic source 2 is located at the bottom of the tank and generates ultrasonic waves with a frequency between 40 kHz and 80 kHz. The power of the ultrasonic source 2 is adjustable between 100 W and 500 W. A cleaning fluid is placed within the tank; the composition of the cleaning fluid is not specifically limited. The impeller 4 is fixedly connected to the inner side of the cleaning tank 1 via a connecting device. The impeller 4 is made of high-strength plastic with a diameter between 10 cm and 20 cm. It consists of multiple pieces, each piece featuring micro-protrusions to enhance turbulence and bubble distribution. The micro-protrusions are 0.5-2 mm high and have a hemispherical or conical shape to maximize turbulence and bubble formation. During operation, the impeller 4 is placed within the cleaning fluid. An air inlet is provided on the side of the cleaning tank 1. An air inlet pipe 3 extends through the air inlet. The air inlet pipe 3 is made of high-strength plastic or stainless steel. The diameter of the air inlet pipe 3 is 1-2 cm, and its length is adjusted according to the size of the cleaning tank 1 to ensure that the gas can effectively enter the cleaning tank 1. The air inlet pipe 3 is oriented horizontally. The end face of the air inlet pipe 3 is close to the impeller 4, and the air inlet direction of the air inlet pipe 3 coincides with the normal direction of the impeller 4. The rotation of the impeller 4 enhances the fluidity and uniformity of the cleaning liquid. A regulating valve is installed on the air inlet pipe 3 outside the cleaning tank to adjust the gas flow rate.
[0023] During the cleaning process, high-frequency sound waves generated by ultrasonic source 2 propagate through the cleaning fluid, creating a cavitation effect that removes tiny particles and contaminants from the wafer surface. The rotation of impeller 4 creates strong flow and turbulence in the cleaning fluid, preventing contaminants from reattaching. Gas is introduced through inlet pipe 3, where it forms a uniform bubble distribution under the action of impeller 4, further enhancing the cavitation effect and cleaning effectiveness.
[0024] Based on Example 1, the wafer cleaning device of the present invention further includes a limiting device, which is placed in the cleaning tank 1 and is used to limit the wafer. Specifically, the limiting device is an elastic rope. The elastic rope is made of corrosion-resistant and high-strength rubber or silicone material. There are multiple elastic ropes and they are parallel, and the direction of the elastic ropes is along the normal direction of the impeller. Two adjacent elastic ropes are grouped together to form a clamping position, which is used to limit the position of the wafer, prevent the wafer from moving and colliding during the cleaning process, and ensure cleaning uniformity. During cleaning, the wafer is placed between the two adjacent elastic ropes.
[0025] When cleaning wafers, first pour an appropriate amount of cleaning liquid into cleaning tank 1, ensuring the liquid level covers the impeller and elastic cords. Next, place the wafers sequentially between two adjacent elastic cords, ensuring each wafer is securely clamped by the cords to prevent movement and collision during the cleaning process. Next, introduce gas through the inlet pipe, adjusting the valve to control the gas flow rate and form an appropriate amount of bubbles. The ultrasonic source is activated, and ultrasonic waves propagate through the cleaning liquid, generating a strong cavitation effect that removes tiny particles and contaminants from the wafer surface. Simultaneously, the impeller is activated to rotate, enhancing the fluidity of the cleaning liquid and the distribution of bubbles, further improving the cleaning effect. After a certain period of time, the ultrasonic source and gas supply are turned off, and the cleaned wafers are removed.
[0026] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.
Claims
1. A gas-assisted ultrasonic wafer cleaning device comprising a cleaning tank and an ultrasonic source, characterized in that: The ultrasonic source is placed at the bottom of the cleaning tank, the cleaning liquid is placed in the cleaning tank, the impeller is fixedly connected to the side of the cleaning tank through a connecting device, the impeller is placed in the cleaning liquid, an air inlet is provided on the side of the cleaning tank, an air inlet is provided through the air inlet, the air inlet direction of the air inlet pipe is horizontal, the end face of the air inlet pipe is close to the impeller, and the air inlet direction of the air inlet pipe coincides with the normal direction of the impeller; the impeller is provided with a micro-protrusion, and the micro-protrusion is hemispherical.
2. The gas-assisted ultrasonic wafer cleaning device according to claim 1, wherein: Outside the cleaning tank, an adjusting valve is provided on the air inlet pipe.
3. The gas-assisted ultrasonic wafer cleaning device according to any one of claims 1 to 2, characterized in that: It also includes a limiting device, which is placed in the cleaning tank and is used to limit the wafer.
4. The gas-assisted ultrasonic wafer cleaning device according to claim 3, wherein: The limiting device is an elastic rope.
5. The gas-assisted ultrasonic wafer cleaning device according to claim 4, wherein: There are multiple parallel elastic ropes, two adjacent elastic ropes form a group, and during cleaning, the wafer is placed between the two adjacent elastic ropes.
6. The gas-assisted ultrasonic wafer cleaning device according to claim 5, wherein: The direction of the elastic rope is along the normal direction of the impeller.