Wafer stage device of ion beam etching machine

Abstract

The utility model provides a wafer carrying table device of an ion beam etching machine, which comprises a carrying table plate, a sealing box is arranged at the lower part of the carrying table plate, a rotary driving assembly and a wafer lifting assembly are arranged in a space between the carrying table plate and the sealing box, the output end of the rotary driving assembly penetrates through an ejector pin compression ring connecting plate and is connected with a transition plate, and the output end of the wafer lifting assembly is connected with the ejector pin compression ring connecting plate. A carrier table water cooling plate and a carrier table water cooling plate sealing plate are arranged between the transition plate and the wafer carrier table, the carrier table water cooling plate is arranged at the lower part of the carrier table water cooling plate sealing plate, the lower surface of the carrier table water cooling plate is provided with a first air flow channel, the upper surface of the carrier table water cooling plate sealing plate is provided with a second air flow channel, and the first air flow channel is communicated with the second air flow channel. The first airflow channel and the second airflow channel are fixedly connected to form a complete airflow channel for low-temperature gas to pass through, a plurality of auxiliary airflow channels are also arranged at the wafer carrying table, one end of each auxiliary airflow channel is communicated with the first airflow channel, and the other end of each auxiliary airflow channel is directly positioned at the lower part of the wafer, so that the cooling effect of the wafer is better.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing equipment, and more specifically to a wafer carrier device of an ion beam etching machine. Background Art

[0002] In the field of semiconductor processing or micro-electromechanical systems, the use of ion beam etching for patterning is a very common anisotropic etching method. Due to the high compatibility of IBE with etching materials, it can etch metals, ceramics, various compounds and other materials that are difficult to handle with micro-processing processes. It plays an important complementary role in addition to wet etching and chemical reactive ion etching.

[0003] The existing patent publication number: CN118588529A, discloses an IBE ion beam etching device, including: a vacuum chamber, a vacuum pump assembly is installed above the vacuum chamber, an ion beam generating device is installed on the rear wall of the vacuum chamber, a rotary drive structure is installed on the left side of the vacuum chamber, an etching carrier is rotatably arranged inside the vacuum chamber, the rotary drive structure drives and connects the etching carrier, a wafer feed port is opened on the right wall of the vacuum chamber, the etching carrier includes a carrier plate, the carrier plate and the space inside the sealed box are fixedly provided with a rotary drive assembly, a wafer lifting and clamping assembly, a baffle drive cylinder and an induction device, the above components are fixedly connected to the carrier plate, and the connection is sealed. The present invention enables the wafer to be in an angle-adjustable state during the etching process, and can complete more precise and complex etching, greatly improving the etching stability and yield rate, with a high degree of automation and improved etching efficiency.

[0004] However, how to efficiently cool the wafer is a problem that needs to be solved. Utility Model Content

[0005] In view of this, in order to solve the above problems, the present invention proposes a wafer carrier device for an ion beam etching machine, comprising a carrier plate 1, a sealing box 12 is provided at the lower part of the carrier plate 1, a rotation drive component 20 and a wafer lifting component 30 are provided in the space between the carrier plate 1 and the sealing box 12, the output end of the rotation drive component 20 is connected to the transition plate 42 through the ejector pin pressure ring connecting plate 41, a carrier water cooling plate 45 and a carrier water cooling plate sealing plate 46 are provided between the transition plate 42 and the wafer carrier 44, the carrier water cooling plate 45 is placed on the carrier At the lower part of the water-cooled plate sealing plate 46, a first air flow channel 451 is provided on the lower surface of the carrier water-cooled plate 45, and a second air flow channel 461 is provided on the upper surface of the carrier water-cooled plate sealing plate 46. The first air flow channel 451 and the second air flow channel 461 are fixedly connected to form a complete air flow channel for passing low-temperature gas. A plurality of auxiliary air flow channels 452 are also provided at the wafer carrier 44. One end of the auxiliary air flow channel 452 is connected to the first air flow channel 451, and the other end is directly located at the lower part of the wafer, so that the cooling effect of the wafer is better.

[0006] A wafer stage device for an ion beam etching machine includes a stage plate 1, a rotating arm 11 is fixedly installed on the stage plate 1, and the rotating arm 11 is used to connect with an external rotary drive structure and rotate through the external rotary drive structure to make the etching of the wafer more uniform. A sealing box 12 is provided at the lower part of the stage plate 1, and a rotary drive assembly 20 and a wafer lifting assembly 30 are provided in the space between the stage plate 1 and the sealing box 12. The output end of the rotary drive assembly 20 passes through the ejector pressure ring connecting plate 41 and the wafer lifting assembly 30. The transition plate 42 is connected, the ejector pressure ring connecting plate 41 is sleeved with the carrier plate 1, and a lifting rod group 411 and an ejector group 412 are fixed on the upper part of the ejector pressure ring connecting plate 41. The ejector group 412 is located at the inner circle of the lifting rod group 411, and the other end of the ejector group 412 is located at the lower part of the wafer. When the wafer needs to be ejected, the ejector group 412 contacts the wafer and lifts the wafer. The lower part of the pressure ring 43 connecting plate is connected to the wafer lifting assembly 30, which is used to control the lifting and lowering of the ejector pressure ring connecting plate 41, from The lifting and lowering of the pressure ring 43 and the ejector pin group 412 are driven so that the wafer carrier 44 cooperates with the pressure ring 43 and the ejector pin group 412 to clamp or lift the wafer. It is characterized in that: a carrier water-cooling plate 45 and a carrier water-cooling plate sealing plate 46 are provided between the transition plate 42 and the wafer carrier 44, and the other end of the lifting rod group 411 passes through the carrier water-cooling plate sealing plate 46, the carrier water-cooling plate 45, the wafer carrier 44 and the pressure ring 43 in sequence and is fixedly connected. The carrier water-cooling plate 45 is placed under the carrier water-cooling plate sealing plate 46. A first air flow channel 451 is provided on the lower surface of the carrier water-cooling plate 45, and a second air flow channel 461 is provided on the upper surface of the carrier water-cooling plate sealing plate 46. The first air flow channel 451 and the second air flow channel 461 are fixedly connected to form a complete air flow channel for passing low-temperature gas. A plurality of auxiliary air flow channels 452 are also provided at the wafer carrier 44. One end of the auxiliary air flow channel 452 is connected to the first air flow channel 451, and the other end is directly located under the wafer, so that the cooling effect of the wafer is better.

[0007] Furthermore, the air inlet 462 of the second air flow channel 461 is located in the middle of the carrier water cooling plate cover 46, and the first air flow channel 451 and the second air flow channel 461 are a double-ring structure extending from the middle to the outer circle, thereby increasing the cooling area.

[0008] Furthermore, the cryogenic gas is preferably helium.

[0009] Furthermore, a liquid circulation groove 463 is provided on the lower surface of the carrier water-cooling plate cover 46, and the liquid circulation groove 463 is fixedly connected to the carrier water-cooling plate cover 46 below it to form a complete liquid flow channel. A water inlet 4631 and a water outlet 4632 are provided in the middle of the liquid flow channel for introducing external cooling liquid and cooling the carrier water-cooling plate 45, and finally cooling the wafer.

[0010] In some embodiments, the rotation drive assembly 20 includes a second servo motor 21, the second servo motor 21 is connected to a right-angle reducer 22, and the right-angle reducer 22 is connected to the input end of the second magnetic fluid shaft 25 in the second magnetic fluid 24 through a pulley structure 23. The second magnetic fluid 24 is fixedly connected to the carrier plate 1, and the output end of the second magnetic fluid shaft 25 in the second magnetic fluid 24 is fixedly connected to the transition plate 42 through the ejector pressure ring connecting plate 41. The rotation of the second magnetic fluid shaft 25 in the second magnetic fluid 24 drives the transition plate 42 to rotate, thereby driving the ejector pressure ring connecting plate 41 to rotate together.

[0011] Furthermore, the middle part of the second magnetic fluid axis 25 in the second magnetic fluid 24 is a hollow structure, and three connecting holes are provided in the middle part of the transition plate 42, which correspond to the air inlet hole 462, the water inlet hole 422, and the water outlet hole 423 respectively. The pipes of the water cooling device and the low-temperature gas device all pass through the middle part of the second magnetic fluid axis 25 in the second magnetic fluid 24 and the three connecting holes in the middle part of the transition plate 42, and are respectively connected to the corresponding air inlet hole 462, the water inlet hole 422, and the water outlet hole 423 to ensure the vacuum degree of the ion beam etching machine.

[0012] Furthermore, an encoder is provided on the second magnetic fluid shaft 25 in the second magnetic fluid 24 to ensure that the wafer carrier 44 device can be accurately positioned. The encoder cannot be the encoder provided by the second servo motor 21. Since the pulley structure 23 may cause the synchronous belt to slip during the transmission process, the rotation of the wafer carrier 44 device cannot be accurately controlled.

[0013] In some embodiments, the wafer lifting assembly 30 includes two lifting drive cylinders 31 symmetrically fixedly mounted on the lower surface of the ejector pressure ring connecting plate 41. The lifting drive cylinder 31 is provided with a pneumatic telescopic end, and a corrugated sealing tube 33 is arranged outside the telescopic end. The upper end of the telescopic end is fixedly connected to the ejector pressure ring connecting plate 41. The corrugated sealing tube 33 seals and fixes the ejector pressure ring connecting plate 41, so that the telescopic end is in a sealed state to prevent the vacuum degree of the ion beam etching machine from being destroyed.

[0014] Furthermore, the lifting rod group 411 and the ejector pin group 412 are evenly spaced around the center of the ejector pin pressure ring connecting plate 41, and the height of the lifting rod group 411 is greater than the height of the ejector pin group 412, so that the pressure ring 43 is raised earlier than the ejector pins, and the pressure plate is lowered later than the ejector pins, thereby realizing automatic fixation or lifting of the wafer.

[0015] In some embodiments, a magnetic piece is provided on one side of the ejector pressure ring connecting plate 41, and a sensing device 50 is provided at the carrier plate 1 for detecting whether the magnetic piece is in place. A vacuum electrode device 60 is provided at the wiring port of the sensing device 50. The connecting wire of the sensing device 50 is connected to one end electrode of the vacuum electrode device 60, and the other end electrode of the vacuum electrode device 60 is connected to an external power supply. The connecting wire in the vacuum is led out through the vacuum electrode device 60 to prevent the vacuum degree of the ion beam etching machine from being destroyed.

[0016] Beneficial effects of the present invention: The present invention proposes a wafer carrier device for an ion beam etching machine, comprising a carrier plate 1, a sealing box 12 being provided at the lower portion of the carrier plate 1, a rotation drive assembly 20 and a wafer lifting assembly 30 being provided in the space between the carrier plate 1 and the sealing box 12, the output end of the rotation drive assembly 20 being connected to the transition plate 42 through the ejector pin pressure ring connecting plate 41, a carrier water cooling plate 45 and a carrier water cooling plate sealing plate 46 being provided between the transition plate 42 and the wafer carrier 44, the carrier water cooling plate 45 being placed on the carrier water cooling plate 46. At the lower part of the cold plate sealing plate 46, a first air flow channel 451 is provided on the lower surface of the carrier water-cooling plate 45, and a second air flow channel 461 is provided on the upper surface of the carrier water-cooling plate sealing plate 46. The first air flow channel 451 and the second air flow channel 461 are fixedly connected to form a complete air flow channel for passing low-temperature gas. A plurality of auxiliary air flow channels 452 are also provided at the wafer carrier 44. One end of the auxiliary air flow channel 452 is connected to the first air flow channel 451, and the other end is directly located at the bottom of the wafer, so that the cooling effect of the wafer is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is an overall structural diagram of the wafer stage device of the ion beam etching machine of the present invention.

[0018] Figure 2 This is a partial structural diagram of the wafer stage device of the ion beam etching machine of the present invention.

[0019] Figure 3 The invention discloses an explosion of a wafer stage device of an ion beam etching machine.

[0020] Figure 4 This is a partial explosion on the front side of the wafer stage device of the ion beam etching machine of the present invention.

[0021] Figure 5 This is a local explosion on the back side of the wafer stage device of the ion beam etching machine of the present invention.

[0022] Figure 6 for Figure 5 A partial enlarged view of .

[0023] Description of main component symbols

[0024] The carrier plate 1, the rotating arm 11, the sealing box 12, the rotation drive assembly 20, the second servo motor 21, the right-angle reducer 22, the pulley structure 23, the second magnetic fluid 24, the second magnetic fluid shaft 25, the wafer lifting assembly 30, the lifting drive cylinder 31, the corrugated sealing tube 33, the ejector pressure ring connecting plate 41, the lifting rod group 411, the ejector group 412, the transition plate 42, the air hole 421, the water inlet hole 422, the water outlet hole 423, the pressure ring 43, the wafer carrier 44, the carrier water-cooling plate 45, the first air flow channel 451, the auxiliary air flow channel 452, the carrier water-cooling plate sealing plate 46, the second air flow channel 461, the air inlet hole 462, the liquid circulation groove 463, the water inlet 4631, the water outlet 4632, the sensing device 50, and the vacuum electrode device 60.

[0025] The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0026] Example:

[0027] like Figure 1-3 and Figure 6As shown, a wafer carrier device of an ion beam etching machine includes a carrier plate 1, on which a rotating arm 11 is fixedly installed, and the rotating arm 11 is used to connect with an external rotary drive structure and rotate through the external rotary drive structure, so that the etching of the wafer is more uniform, and a sealing box 12 is provided at the lower part of the carrier plate 1, and a rotary drive assembly 20 and a wafer lifting assembly 30 are provided in the space between the carrier plate 1 and the sealing box 12, and the output end of the rotary drive assembly 20 is connected to the transition plate 42 through the ejector pressure ring connecting plate 41, and the ejector pressure ring connecting plate 41 is sleeved with the carrier plate 1, and a lifting rod group 411 and an ejector group 412 are fixed on the upper part of the ejector pressure ring connecting plate 41, and the ejector group 412 is located at the inner circle of the lifting rod group 411 The other end of the ejector pin group 412 is located at the lower part of the wafer. When the wafer needs to be ejected, the ejector pin group 412 contacts the wafer and lifts the wafer. The lower part of the pressure ring 43 connecting plate is connected to the wafer lifting assembly 30, which is used to control the lifting and lowering of the ejector pressure ring connecting plate 41, thereby driving the lifting and lowering of the pressure ring 43 and the ejector pin group 412, so that the wafer carrier 44 cooperates with the pressure ring 43 and the ejector pin group 412 to clamp or lift the wafer. A carrier water-cooling plate 45 and a carrier water-cooling plate sealing plate 46 are provided between the transition plate 42 and the wafer carrier 44. The other end of the lifting rod group 411 passes through the carrier water-cooling plate sealing plate 46, the carrier water-cooling plate 45, the wafer carrier 44 and the pressure ring 43 in sequence and is fixedly connected. The carrier water-cooling plate 45 is placed at the lower part of the carrier water-cooling plate sealing plate 46.

[0028] The rotation drive assembly 20 includes a second servo motor 21, which is connected to a right-angle reducer 22. The right-angle reducer 22 is connected to the input end of the second magnetic fluid shaft 25 in the second magnetic fluid 24 through a pulley structure 23. The second magnetic fluid 24 is fixedly connected to the carrier plate 1. The output end of the second magnetic fluid shaft 25 in the second magnetic fluid 24 is fixedly connected to the transition plate 42 through the ejector pressure ring connecting plate 41. The rotation of the second magnetic fluid shaft 25 in the second magnetic fluid 24 drives the transition plate 42 to rotate, thereby driving the ejector pressure ring connecting plate 41 to rotate together.

[0029] An encoder is provided on the second magnetic fluid shaft 25 in the second magnetic fluid 24 to ensure that the wafer carrier 44 device can be accurately positioned. The encoder cannot be the encoder provided by the second servo motor 21. Since the pulley structure 23 may cause the synchronous belt to slip during the transmission process, the rotation of the wafer carrier 44 device cannot be accurately controlled.

[0030] The lifting rod group 411 and the ejector pin group 412 are evenly spaced around the center of the ejector pin pressure ring connecting plate 41. The height of the lifting rod group 411 is greater than the height of the ejector pin group 412, so that the pressure ring 43 is raised earlier than the ejector pins, and the pressure plate is lowered later than the ejector pins, thereby realizing automatic fixing or lifting of the wafer.

[0031] A magnetic piece is provided on one side of the ejector pressure ring connecting plate 41, and a sensing device 50 is provided at the carrier plate 1 for detecting whether the magnetic piece is in place. A vacuum electrode device 60 is provided at the wiring port of the sensing device 50. The connecting wire of the sensing device 50 is connected to one end electrode of the vacuum electrode device 60, and the other end electrode of the vacuum electrode device 60 is connected to an external power supply. The connecting wire in the vacuum is led out through the vacuum electrode device 60 to prevent the vacuum degree of the ion beam etching machine from being destroyed.

[0032] like Figure 4-5 As shown, the lower surface of the carrier water-cooling plate 45 is provided with a first air flow channel 451, and the upper surface of the carrier water-cooling plate sealing plate 46 is provided with a second air flow channel 461. The first air flow channel 451 and the second air flow channel 461 are fixedly connected to form a complete air flow channel for passing low-temperature gas. The wafer carrier 44 is also provided with a plurality of auxiliary air flow channels 452. One end of the auxiliary air flow channel 452 is connected to the first air flow channel 451, and the other end is directly located at the bottom of the wafer, so that the cooling effect of the wafer is better. The lower surface of the carrier water-cooling plate sealing plate 46 is provided with a liquid circulation groove 463 The liquid circulation groove 463 is fixedly connected to the carrier water-cooling plate cover 46 at its lower part to form a complete liquid flow channel. A water inlet 4631 and a water outlet 4632 are provided in the middle of the liquid flow channel for introducing external coolant and cooling the carrier water-cooling plate 45, and finally cooling the wafer. The air inlet 462 of the second air flow channel 461 is located in the middle of the carrier water-cooling plate cover 46. The first air flow channel 451 and the second air flow channel 461 are a double-ring structure extending from the middle to the outer circle, thereby increasing the cooling area. The low-temperature gas is preferably helium.

[0033] The middle part of the second magnetic fluid axis 25 in the second magnetic fluid 24 is a hollow structure, and three connecting holes are provided in the middle part of the transition plate 42, which correspond to the air inlet hole 462, the water inlet hole 422, and the water outlet hole 423 respectively. The pipes of the water cooling device and the low-temperature gas device all pass through the middle part of the second magnetic fluid axis 25 in the second magnetic fluid 24 and the three connecting holes in the middle part of the transition plate 42 and are connected to the corresponding air inlet hole 462, the water inlet hole 422, and the water outlet hole 423 respectively to ensure the vacuum degree of the ion beam etching machine.

[0034] The wafer lifting assembly 30 includes two lifting drive cylinders 31 symmetrically fixedly mounted on the lower surface of the ejector pressure ring connecting plate 41. The lifting drive cylinder 31 is provided with a pneumatic telescopic end, and a corrugated sealing tube 33 is arranged outside the telescopic end. The upper end of the telescopic end is fixedly connected to the ejector pressure ring connecting plate 41. The corrugated sealing tube 33 seals and fixes the ejector pressure ring connecting plate 41, so that the telescopic end is in a sealed state to prevent the vacuum degree of the ion beam etching machine from being destroyed.

[0035] Beneficial effects of the present invention: The present invention proposes a wafer carrier device for an ion beam etching machine, comprising a carrier plate 1, a sealing box 12 being provided at the lower portion of the carrier plate 1, a rotation drive assembly 20 and a wafer lifting assembly 30 being provided in the space between the carrier plate 1 and the sealing box 12, the output end of the rotation drive assembly 20 being connected to the transition plate 42 through the ejector pin pressure ring connecting plate 41, a carrier water cooling plate 45 and a carrier water cooling plate sealing plate 46 being provided between the transition plate 42 and the wafer carrier 44, the carrier water cooling plate 45 being placed on the carrier water cooling plate 46. At the lower part of the cold plate sealing plate 46, a first air flow channel 451 is provided on the lower surface of the carrier water-cooling plate 45, and a second air flow channel 461 is provided on the upper surface of the carrier water-cooling plate sealing plate 46. The first air flow channel 451 and the second air flow channel 461 are fixedly connected to form a complete air flow channel for passing low-temperature gas. A plurality of auxiliary air flow channels 452 are also provided at the wafer carrier 44. One end of the auxiliary air flow channel 452 is connected to the first air flow channel 451, and the other end is directly located at the bottom of the wafer, so that the cooling effect of the wafer is better.

[0036] The above-described embodiments merely represent several implementation methods of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A wafer carrier device for an ion beam etching machine, comprising a carrier plate (1), a rotating arm (11) fixedly mounted on the carrier plate (1), the rotating arm (11) being used to connect with an external rotary drive structure and rotated by the external rotary drive structure so as to make the etching of the wafer more uniform, a sealing box (12) being provided at the lower part of the carrier plate (1), a rotary drive assembly (20) and a wafer lifting assembly (30) being provided in the space between the carrier plate (1) and the sealing box (12), the output end of the rotary drive assembly (20) being connected to a transition plate (42) through a pin pressure ring connecting plate (41), the pin pressure ring connecting plate (41) being sleeved with the carrier plate (1), the A lifting rod group (411) and a lifting pin group (412) are fixedly provided on the upper part of the ejector pressure ring connecting plate (41), the ejector pin group (412) is located at the inner circle of the lifting rod group (411), and the other end of the ejector pin group (412) is located at the lower part of the wafer. When the wafer needs to be ejected, the ejector pin group (412) contacts the wafer and lifts the wafer. The lower part of the pressure ring (43) connecting plate is connected to the wafer lifting assembly (30) for controlling the lifting and lowering of the ejector pressure ring connecting plate (41), thereby driving the lifting and lowering of the pressure ring (43) and the ejector pin group (412), so that the wafer carrier (44) cooperates with the pressure ring (43) and the ejector pin group (412) to clamp or lift the wafer. The wafer carrier (44) is characterized in that: A carrier water-cooling plate (45) and a carrier water-cooling plate sealing plate (46) are provided between the transition plate (42) and the wafer carrier (44); the other end of the hoisting rod group (411) passes through the carrier water-cooling plate sealing plate (46), the carrier water-cooling plate (45), the wafer carrier (44) and the pressure ring (43) in sequence and is fixedly connected; the carrier water-cooling plate (45) is placed at the lower part of the carrier water-cooling plate sealing plate (46); the lower surface of the carrier water-cooling plate (45) is provided with a first air flow channel (451); A second air flow channel (461) is provided on the upper surface of the carrier water-cooling plate sealing plate (46), and the first air flow channel (451) and the second air flow channel (461) are fixedly connected to form a complete air flow channel for passing low-temperature gas. A plurality of auxiliary air flow channels (452) are also provided at the wafer carrier (44), one end of the auxiliary air flow channel (452) is connected to the first air flow channel (451), and the other end is directly located under the wafer, so that the cooling effect of the wafer is better.

2. The wafer stage device of the ion beam etching machine according to claim 1, wherein: The air inlet hole (462) of the second air flow channel (461) is located in the middle of the carrier water-cooling plate cover (46), and the first air flow channel (451) and the second air flow channel (461) are a double-ring structure extending from the middle to the outer circle, thereby increasing the cooling area.

3. The wafer stage device for an ion beam etching machine according to claim 1, wherein: The cryogenic gas is helium.

4. The wafer stage device for an ion beam etching machine according to claim 1, wherein: A liquid circulation groove (463) is provided on the lower surface of the carrier water-cooling plate sealing plate (46), and the liquid circulation groove (463) is fixedly connected to the carrier water-cooling plate sealing plate (46) below it to form a complete liquid flow channel. A water inlet (4631) and a water outlet (4632) are provided in the middle of the liquid flow channel for introducing external cooling liquid and cooling the carrier water-cooling plate (45), and finally cooling the wafer.

5. The wafer stage device for an ion beam etching machine according to claim 1, wherein: The rotary drive assembly (20) includes a second servo motor (21), the second servo motor (21) is connected to a right-angle reducer (22), the right-angle reducer (22) is connected to the input end of the second magnetic fluid shaft (25) in the second magnetic fluid (24) through a pulley structure (23), the second magnetic fluid (24) is fixedly sleeved with the carrier plate (1), the output end of the second magnetic fluid shaft (25) in the second magnetic fluid (24) is fixedly connected to the transition plate (42) through the ejector pressure ring connecting plate (41), and the transition plate (42) is driven to rotate by the rotation of the second magnetic fluid shaft (25) in the second magnetic fluid (24), thereby driving the ejector pressure ring connecting plate (41) to rotate together.

6. The wafer stage device for an ion beam etching machine according to claim 5, wherein: The middle part of the second magnetic fluid axis (25) in the second magnetic fluid (24) is a hollow structure, and the middle part of the transition plate (42) is provided with three connecting holes, which respectively correspond to the air inlet hole (462), the water inlet hole (422), and the water outlet hole (423). The pipelines of the water cooling device and the low-temperature gas device all pass through the middle part of the second magnetic fluid axis (25) in the second magnetic fluid (24) and the three connecting holes in the middle part of the transition plate (42) and are respectively connected to the corresponding air inlet hole (462), the water inlet hole (422), and the water outlet hole (423), so as to ensure the vacuum degree of the ion beam etching machine.

7. The wafer stage device for an ion beam etching machine according to claim 5, wherein: An encoder is provided on the second magnetic fluid shaft (25) in the second magnetic fluid (24) to ensure that the wafer carrier (44) device can be accurately positioned. The encoder cannot be the encoder provided by the second servo motor (21). Since the pulley structure (23) may cause the synchronous belt to slip during the transmission process, the rotation of the wafer carrier (44) device cannot be accurately controlled.

8. The wafer stage device of the ion beam etching machine according to claim 1, wherein: The wafer lifting assembly (30) comprises two lifting drive cylinders (31) symmetrically fixedly mounted on the lower surface of the ejector pressure ring connecting plate (41); the lifting drive cylinders (31) are provided with a pneumatic telescopic end, a corrugated sealing tube (33) is arranged on the outer surface of the telescopic end, the upper end of the telescopic end is fixedly connected to the ejector pressure ring connecting plate (41); the corrugated sealing tube (33) seals and fixes the ejector pressure ring connecting plate (41), so that the telescopic end is in a sealed state, thereby preventing the vacuum degree of the ion beam etching machine from being destroyed.

9. The wafer stage device for an ion beam etching machine according to claim 1, wherein: The hoisting rod group (411) and the ejector pin group (412) are evenly spaced around the center of the ejector pin pressure ring connecting plate (41), and the height of the hoisting rod group (411) is greater than the height of the ejector pin group (412), so that the pressure ring (43) rises earlier than the ejector pins, and the pressure plate falls later than the ejector pins, thereby realizing automatic fixing or lifting of the wafer.

10. The wafer stage device for an ion beam etching machine according to claim 1, wherein: A magnetic sheet is provided on one side of the ejector pin pressure ring connecting plate (41), and a sensing device (50) is provided at the carrier plate (1) for detecting whether the magnetic sheet is in place. A vacuum electrode device (60) is provided at the connection port of the sensing device (50), and a connecting wire of the sensing device (50) is connected to an electrode at one end of the vacuum electrode device (60), and an electrode at the other end of the vacuum electrode device (60) is connected to an external power supply. The connecting wire in the vacuum is led out through the vacuum electrode device (60) to prevent the vacuum degree of the ion beam etching machine from being destroyed.

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