LED structure for monitoring large current impact

Abstract

The utility model provides an LED structure for monitoring large current impact, and belongs to the technical field of LED device manufacturing. The LED structure comprises a support, a light-emitting diode chip, a lead, a thermoluminescent material, a photodiode chip, a resistor and an electrode, when the LED device is impacted by overcurrent, the resistor is affected by electric stress, the temperature rises, the thermoluminescent material coating the periphery is heated to emit light, light of the wave band is received by the photodiode chip to generate photo-generated current, and the photogenerated current is generated by the photodiode chip. After the circuit receives the feedback signal, the next step of protection action such as shunting or cutting off can be executed. A series of elements and chips are integrated in an LED structure, heat generated during large-current impact is converted into electric signals, and therefore the purpose of monitoring large-current impact is achieved. The over-current protection function of the circuit is realized; and the structure of the device is improved, system integration is facilitated, and the application range is wide.

Description

Technical Field

[0001] The utility model relates to the technical field of LED device manufacturing, in particular to an LED structure for monitoring large current impacts. Background Art

[0002] Electrical overstress (EOS) failure is damage to electronic devices caused by voltage or current exceeding their design specifications. EOS failure is typically caused by prolonged overvoltage or high current (from microseconds to several seconds), leading to localized overheating. This can heat the chip's internal connection resistors and cause destructive damage to the chip structure. EOS can be caused by a variety of factors, including induction of external lightning surges, surges caused by power supply transients, high-voltage spikes caused by switching devices and circuits on the circuit board, poor PCB ground connection traces, strong electromagnetic interference, switching operations of MCUs and IC controllers, surges caused by hot plugging, and the presence of ESD.

[0003] To prevent EOS failures, conventional LED products often incorporate Zener diode chips within their structures to ensure the LED operates within a safe operating voltage range. However, currently, all protection chips within LED structures only provide overvoltage protection. When the voltage exceeds its set point, the excess voltage is clamped to a safe level to prevent damage to the LED. For overcurrent surges, we can only protect against them by optimizing circuit design or using protection circuits. Currently, no LED product offers built-in overcurrent protection.

[0004] The above problems are in urgent need of resolution. Utility Model Content

[0005] The purpose of the utility model is to overcome the problem that conventional LED products in the prior art cannot prevent large current shocks.

[0006] The utility model provides an LED structure for monitoring large current impacts. The LED structure includes: a bracket, a light-emitting diode chip, a lead, a thermoluminescent material, a photodiode chip, a resistor and an electrode. The electrode is fixed on the inner side of the bracket, the light-emitting diode chip is bonded to the electrode on one side of the bracket, the resistor is bonded to the electrode on the other side of the bracket, the photodiode chip and the resistor are bonded to the electrode on the same side, the light-emitting diode chip and the resistor are electrically connected through the lead, the photodiode chip and the electrode bonded to the light-emitting diode chip are electrically connected through the lead, the thermoluminescent material is coated around the resistor, when the LED is impacted by overcurrent, the resistor is affected by electrical stress and the temperature rises, the thermoluminescent material is heated and emits light, the light in this band is received by the photodiode chip to generate photocurrent, and then an electrical signal is fed back to the circuit to enable it to execute the circuit protection process.

[0007] Furthermore, the circuit protection process includes current diversion or current interruption operations.

[0008] Furthermore, the LED structure further includes: a packaging component, wherein the packaging component includes packaging glue, and the packaging glue is used to package and protect the photodiode chip and the light-emitting diode chip in the LED structure.

[0009] Furthermore, the light emitting diode chip is connected in series with the resistor.

[0010] Furthermore, the resistance of the resistor is greater than the internal resistance of the light-emitting diode chip, so that the temperature rise rate of the resistor is greater than the temperature rise rate of the light-emitting diode chip when a large current passes through.

[0011] Furthermore, the excitation temperature of the thermoluminescent material is greater than the operating temperature of the LED device when it reaches thermal equilibrium at the rated operating current, and is less than the rated junction temperature of the light emitting diode chip.

[0012] Furthermore, the thermoluminescent material is a thermochromic fluorescent material or a thermodelayed fluorescent material.

[0013] Furthermore, the thermochromic fluorescent material is a thermochromic perovskite material, which can reversibly change its optical properties when the external temperature changes; the thermochromic delayed fluorescent material is a material that can change its luminescence characteristics when the temperature changes.

[0014] Furthermore, the thermoluminescent material is transparent in an unexcited state.

[0015] Furthermore, the wavelength of light received by the photodiode chip matches the wavelength of light emitted after the thermoluminescent material is excited.

[0016] The beneficial effects of the present invention are as follows: the present invention provides an LED structure for monitoring large current impacts, the LED structure comprising: a bracket, a light-emitting diode chip, a lead, a thermoluminescent material, a photodiode chip, a resistor and an electrode. When the LED is impacted by an overcurrent, the temperature of the resistor rises due to the influence of electrical stress, the thermoluminescent material emits light due to the heat, and the light in this band is received by the photodiode chip to generate a photocurrent, which in turn feeds back an electrical signal to the circuit to enable it to execute the circuit protection process. By integrating a series of components and chips into the LED structure, the heat generated by a large current impact is converted into an electrical signal, thereby achieving the purpose of monitoring large current impacts. This helps to realize the overcurrent protection function of the circuit; and by improving the structure of the device itself, it is easy to integrate the system and has a wide range of applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0018] Figure 1 This is a schematic diagram of an LED structure for monitoring large current impacts provided by an embodiment of the utility model. DETAILED DESCRIPTION

[0019] Before discussing exemplary embodiments in more detail, it should be mentioned that although the terms "first," "second," and the like may be used herein to describe various units, these units should not be limited by these terms. These terms are used solely to distinguish one unit from another. For example, without departing from the scope of exemplary embodiments, a first unit may be referred to as a second unit, and similarly, a second unit may be referred to as a first unit. The term "and / or" as used herein includes any and all combinations of one or more of the listed associated items.

[0020] The present invention will now be described in detail with reference to the accompanying drawings. This figure is a simplified schematic diagram, which only illustrates the basic structure of the present invention in a schematic manner, and therefore only shows the components related to the present invention.

[0021] To facilitate subsequent understanding, the following professional terms are explained here:

[0022] Photo-generated current is an electric current generated by light energy. It is the process by which light energy excites electrons in semiconductor materials to jump from the valence band to the conduction band, forming an electric current.

[0023] Thermochromic perovskite material: a material that can reversibly change its optical properties (such as color, transparency and reflectivity) under changes in external temperature.

[0024] Thermally induced delayed fluorescence (TADF) is a type of material that can change its luminescence properties under temperature changes. It has broad application prospects in organic optoelectronic devices, photocatalysis, laser display, fluorescence imaging and sensing.

[0025] Example 1

[0026] To facilitate subsequent understanding, the working principle is explained here: an LED structure for monitoring large current shocks is provided, and the LED structure includes: a bracket, a light-emitting diode chip, a lead, a thermoluminescent material, a photodiode chip, a resistor, and an electrode. When the LED device is subjected to an overcurrent shock, the temperature of the resistor rises due to the influence of electrical stress, and the thermoluminescent material coated around it is heated and emits light. The light in this band is received by the photodiode chip to generate a photocurrent, which in turn feeds back an electrical signal to the circuit. After receiving the feedback signal, the circuit can perform the next protection action such as shunting or cutting off. By integrating a series of components and chips into the LED structure, the heat generated by a large current shock is converted into an electrical signal, thereby achieving the purpose of monitoring large current shocks. This helps to realize the overcurrent protection function of the circuit; and the improvement of the structure of the device itself facilitates system integration and has a wide range of applications.

[0027] like Figure 1 FIG. 1 is a schematic diagram of an LED structure for monitoring large current impacts provided by the present invention.

[0028] As an example, the LED structure includes: a bracket 1, a light-emitting diode chip 2, a lead 3, a thermoluminescent material 4, a photodiode chip 5, a resistor 6 and an electrode 7, wherein the electrode 7 is fixed on the inner side of the bracket 1, the light-emitting diode chip 2 is bonded to the electrode 7 on one side of the bracket 1, and the resistor 6 is bonded to the electrode 7 on the other side of the bracket 1. The photodiode chip 5 and the resistor 6 are bonded to the electrode 7 on the same side, the light-emitting diode chip 2 is electrically connected to the resistor 6 through the lead 3, and the photodiode chip 5 is electrically connected to the electrode 7 bonded to the light-emitting diode chip 2 through the lead 3. The thermoluminescent material 4 is coated around the resistor 6. When the LED is subjected to an overcurrent shock, the temperature of the resistor 6 rises due to the electrical stress, and the thermoluminescent material 4 is heated to emit light. The light in this band is received by the photodiode chip 5 to generate a photocurrent, which then feeds back an electrical signal to the circuit to enable it to execute the circuit protection process.

[0029] Preferably, the circuit protection process includes current shunting or current interruption. Specifically, when the LED is subjected to an overcurrent shock, the temperature of resistor 6 rises due to electrical stress, and the thermoluminescent material 4 emits light. This wavelength of light is received by the photodiode chip 5, generating a photocurrent, which in turn feeds back an electrical signal to the circuit. Upon receiving this feedback signal, the circuit can then perform the next protective action, such as current shunting or current interruption. By converting the heat generated by a high current shock into an electrical signal, the purpose of monitoring high current shocks is achieved.

[0030] Preferably, the LED structure further comprises: a packaging component (not shown in the figure), wherein the packaging component comprises packaging glue, and the packaging glue is used to package and protect the photodiode chip 5 and the light-emitting diode chip 2 in the LED structure.

[0031] Preferably, the light emitting diode chip 2 and the resistor 6 are connected in series.

[0032] Preferably, the resistance of the resistor 6 is greater than the internal resistance of the LED chip 2 , so that the temperature rise rate of the resistor 6 is greater than the temperature rise rate of the LED chip 2 when a large current passes through.

[0033] Preferably, the excitation temperature of the thermoluminescent material 4 is greater than the operating temperature of the LED device when it reaches thermal equilibrium at the rated operating current, and is less than the rated junction temperature of the light-emitting diode chip 2. The operating temperature of the LED device when it reaches thermal equilibrium at the rated operating current is typically 40°C, and the rated junction temperature of the light-emitting diode chip 2 can be set to 125°C. It should be noted that since the operating temperatures and rated junction temperatures vary between different models of LED devices and light-emitting diode chips, the operating temperature of the LED device when it reaches thermal equilibrium at the rated operating current and the rated junction temperature of the light-emitting diode chip 2 are not limited here. Relevant technicians can modify the above temperature settings based on actual needs during actual application.

[0034] Preferably, the thermoluminescent material 4 is a thermochromic fluorescent material or a thermo-induced delayed fluorescent material. The thermochromic fluorescent material is a thermochromic perovskite material that can reversibly change its optical properties under external temperature changes; the thermo-induced delayed fluorescent material is a material that can change its luminescence characteristics under temperature changes.

[0035] Preferably, the thermoluminescent material 4 is transparent in an unexcited state.

[0036] Preferably, the wavelength of the light received by the photodiode chip 5 matches the wavelength of the light emitted by the thermoluminescent material 4 after excitation.

[0037] The embodiment disclosed in the above utility model provides an LED structure for monitoring large current impacts. The LED structure includes: a bracket, a light-emitting diode chip, a lead, a thermoluminescent material, a photodiode chip, a resistor and an electrode. When the LED device is impacted by an overcurrent, the temperature of the resistor rises due to the influence of electrical stress, and the thermoluminescent material coated around it emits light due to the heat. The light in this band is received by the photodiode chip to generate a photocurrent, which in turn feeds back an electrical signal to the circuit. After receiving the feedback signal, the circuit can perform the next protection action such as shunting or cutting off. By integrating a series of components and chips into the LED structure, the heat generated by a large current impact is converted into an electrical signal, thereby achieving the purpose of monitoring large current impacts. This helps to realize the overcurrent protection function of the circuit; and the improvement of the structure of the device itself facilitates system integration and has a wide range of applications.

[0038] The above is only an embodiment of the present utility model. Common knowledge such as the known specific structures and characteristics in the scheme is not described in detail here. Ordinary technicians in the relevant field are aware of all common technical knowledge in the technical field of the utility model before the application date or priority date, can obtain all existing technologies in the field, and have the ability to apply conventional experimental means before that date. Ordinary technicians in the relevant field can improve and implement this scheme in combination with their own abilities under the inspiration given by this application. Some typical known structures or known methods should not become obstacles for ordinary technicians in the relevant field to implement this application. It should be pointed out that for technicians in this field, without departing from the structure of the utility model, several deformations and improvements can be made, which should also be regarded as the scope of protection of the utility model. These will not affect the effect of the implementation of the utility model and the practicality of the patent. The scope of protection required by this application shall be based on the content of its claims, and the specific implementation methods and other records in the specification can be used to interpret the content of the claims.

Claims

1. An LED structure for monitoring high current impact, characterized in that: The LED structure comprises: a bracket (1), a light-emitting diode chip (2), a lead (3), a thermoluminescent material (4), a photodiode chip (5), a resistor (6) and an electrode (7), wherein the electrode (7) is fixed on the inner side of the bracket (1), the light-emitting diode chip (2) is bonded to the electrode (7) on one side of the bracket (1), the resistor (6) is bonded to the electrode (7) on the other side of the bracket (1), the photodiode chip (5) and the resistor (6) are bonded to the electrode (7) on the same side, and the light-emitting diode chip ( 2) is electrically connected to the resistor (6) through a lead (3), the electrode (7) bonded to the photodiode chip (5) and the light-emitting diode chip (2) is electrically connected through a lead (3), the thermoluminescent material (4) is coated around the resistor (6), when the LED is subjected to an overcurrent impact, the temperature of the resistor (6) rises due to the influence of electrical stress, the thermoluminescent material (4) emits light due to the heat, and the light excited by the heat of the thermoluminescent material (4) is received by the photodiode chip (5) to generate a photocurrent, and then an electrical signal is fed back to the circuit to enable it to execute the circuit protection process.

2. The LED structure for monitoring large current impact according to claim 1, characterized in that: The circuit protection process includes current diversion or current interruption operations.

3. The LED structure for monitoring large current impact according to claim 1, characterized in that: The LED structure further comprises: a packaging component, wherein the packaging component comprises packaging glue, and the packaging glue is used to package and protect the photodiode chip (5) and the light-emitting diode chip (2) in the LED structure.

4. The LED structure for monitoring large current impact according to claim 1, characterized in that: The light-emitting diode chip (2) and the resistor (6) are connected in series.

5. The LED structure for monitoring large current impact according to claim 1, characterized in that: The resistance of the resistor (6) is greater than the internal resistance of the light-emitting diode chip (2), and is used to make the temperature rise rate of the resistor (6) greater than the temperature rise rate of the light-emitting diode chip (2) when a large current passes through.

6. The LED structure for monitoring large current impact according to claim 1, characterized in that: The excitation temperature of the thermoluminescent material (4) is greater than the operating temperature of the LED device when it reaches thermal equilibrium at the rated operating current, and is less than the rated junction temperature of the light-emitting diode chip (2).

7. The LED structure for monitoring large current impact according to claim 1, characterized in that: The thermoluminescent material (4) is a thermoluminescent color-changing material or a thermoluminescent delayed fluorescent material.

8. The LED structure for monitoring large current impact according to claim 7, characterized in that: The thermochromic fluorescent material is a thermochromic perovskite material, which can reversibly change its optical properties when the external temperature changes; The thermally delayed fluorescent material is a material whose luminescence characteristics can be changed under temperature changes.

9. The LED structure for monitoring large current impact according to claim 1, characterized in that: The thermoluminescent material (4) is transparent in an unexcited state.

10. The LED structure for monitoring large current impact according to claim 1, characterized in that: The wavelength of light received by the photodiode chip (5) matches the wavelength of light emitted by the thermoluminescent material (4) after excitation.

Images