Automatic wafer cleaning, corroding and passivating device

Abstract

The utility model provides an automatic wafer cleaning, corroding and passivating device which comprises a box body, the bottom of the box body is connected with a material platform and a surface treatment device, and the material platform and the surface treatment device are arranged close to each other. A transfer device is arranged on the upper sides of the material platform and the surface treatment device, the two ends of the transfer device are connected to the side wall of the box body, and the transfer device transfers the wafer on the material platform into the surface treatment device for surface treatment. The surface treatment device comprises a cleaning machine, a corrosion beaker and a passivation beaker, cleaning liquid is arranged in a cleaning cavity of the cleaning machine, corrosion liquid is arranged in the corrosion beaker, and passivation liquid is arranged in the passivation beaker. The whole surface treatment process is fully automatically carried out, and the stability of the surface treatment process can be ensured. And full-automatic surface treatment is carried out in the box body, so that operators can be prevented from being in contact with toxic liquid, and body health and safety are guaranteed.

Description

Technical Field

[0001] The utility model belongs to the technical field of crystal testing, and in particular relates to an automatic wafer cleaning, etching and passivation device. Background Art

[0002] The grown crystals typically undergo optoelectronic performance characterization testing, with the results used to assess the quality of the crystal growth. A series of processes are required before the optoelectronic characterization testing phase. The main steps include: slicing the crystal blank into wafers; further processing the wafers into dies; grinding and polishing the dies; surface treatment of the polished dies; electrode plating on the treated dies; and finally, optoelectronic performance characterization testing. Surface treatment of the polished dies involves multiple steps, primarily cleaning, etching, and passivation. Cleaning reagents are typically organic chemicals, such as methanol, ethanol, propanol, and ethylene glycol. Etching and passivation reagents are often acids, bases, and some strong oxidizing agents, such as hydrochloric acid, nitric acid, potassium hydroxide, and hydrogen peroxide. Currently, most surface treatment steps are manual. Organic, acidic, alkaline, and strongly oxidizing chemicals can be harmful to the human body to varying degrees, requiring specialized protective masks and protective gear, which can be harmful to human health. In order to ensure the stability of chip performance testing, it is necessary to ensure the stability of the surface treatment process. However, manual operation has errors in technique, timeliness and accuracy, making it difficult to ensure the stability and accuracy of the surface treatment process.

[0003] Therefore, the above problems need to be solved urgently. Utility Model Content

[0004] Purpose of the utility model: In order to overcome the above shortcomings, the utility model provides an automatic wafer cleaning, corrosion and passivation device to ensure the stability and accuracy of the surface treatment process, improve the safety of surface treatment, and protect personal health and safety.

[0005] Technical solution: In order to achieve the above-mentioned purpose, the present invention provides an automatic cleaning, etching and passivation device for wafers, comprising a box body, a material platform and a surface treatment device connected to the bottom of the box body, and the material platform and the surface treatment device are arranged adjacent to each other. A transfer device is provided on the upper side of the material platform and the surface treatment device, and the two ends of the transfer device are connected to the side walls of the box body. The transfer device transfers the wafers on the material platform to the surface treatment device for surface treatment. The surface treatment device comprises a cleaning machine, a corrosion beaker, and a passivation beaker. The cleaning chamber of the cleaning machine is provided with a cleaning liquid, the corrosion beaker is provided with a corrosion liquid, and the passivation beaker is provided with a passivation liquid. The cleaning chamber, corrosion beaker, and passivation beaker of the cleaning machine are made of acid- and alkali-resistant polytetrafluoroethylene, and the surfaces of the cleaning machine and the transfer device are coated with an acid- and alkali-resistant coating. During the use of the present invention, the wafer is placed on the surface of the material platform, and then the transfer device transfers the wafer on the material platform to the surface treatment device for surface treatment. Specifically, it includes: the transfer device first transfers the wafer to the cleaning machine for cleaning, and then the transfer device transfers the wafer in the cleaning machine to the corrosion beaker for corrosion. After the corrosion is completed, the transfer device transfers the wafer in the corrosion beaker to the cleaning machine for cleaning, and then the transfer device transfers the wafer in the cleaning machine to the passivation beaker for passivation. After the passivation is completed, the transfer device transfers the wafer in the passivation beaker to the cleaning machine for cleaning. When cleaning is completed, all surface treatment processes are completed. The above-mentioned cleaning machine uses an ultrasonic cleaning agent. During cleaning, the ultrasonic cleaning machine needs to work according to the set power, temperature and duration to ensure that the cleaning is in place. The entire surface treatment process is fully automatic and does not require human intervention. It can ensure the stability of the surface treatment process and thus ensure the stability of the wafer performance test. Fully automatic surface treatment in the box can avoid contact between operators and toxic liquids and ensure their health and safety.

[0006] Furthermore, in the aforementioned automatic wafer cleaning, etching, and passivation device, a housing is provided with a cleaning agent barrel, a passivating agent barrel, and an etching agent barrel. The cleaning agent barrel contains cleaning agent, the passivating agent barrel contains passivating liquid, and the etching agent barrel contains etching liquid. Pipes connecting the cleaning agent barrel, the passivating agent barrel, and the etching agent barrel are connected to a pump assembly. The pump assembly pumps the cleaning agent in the cleaning agent barrel into the cleaning machine, the pump assembly pumps the passivating liquid in the passivating agent barrel into the passivation beaker, and the pump assembly pumps the etching liquid in the etching agent barrel into the etching beaker. The pump assembly is configured as a plurality of peristaltic pumps, and all connecting pipes are made of acid- and alkali-resistant polytetrafluoroethylene. The cleaning agent barrel, the passivating agent barrel, and the etching agent barrel are disposed within the housing and pumped to the cleaning machine, etching beaker, and passivation beaker, respectively, by the pump assembly. This enables automatic reagent replenishment during the surface treatment process, achieving continuous operation, reducing manual intervention, and improving production efficiency. Furthermore, the timely replenishment of reagents ensures reagent concentration during the surface treatment process, prevents fluctuations in reagent concentration from affecting surface treatment quality, and improves the stability of the surface treatment process.

[0007] Furthermore, in the aforementioned automatic wafer cleaning, etching, and passivation apparatus, the housing is provided with a sliding door that divides the housing into a work area and a liquid storage area. The material platform, surface treatment device, and transfer device are located in the work area, while the cleaning agent barrel, passivation agent barrel, etching agent barrel, and pump assembly are located in the liquid storage area. By dividing the housing into the work area and the liquid storage area, and providing doors to each of the work area and the liquid storage area, the housing does not need to be opened when reagents need to be replenished, thereby preventing the escape of toxic gases generated during the surface treatment process, reducing environmental pollution, and protecting human health and safety.

[0008] Furthermore, in the above-mentioned automatic wafer cleaning, etching and passivation device, there are two or more cleaning agent barrels, and different cleaning agents are contained in the two or more cleaning agent barrels. There are two or more passivating agent barrels, and different passivating liquids are contained in the two or more passivating agent barrels. There are two or more etching agent barrels, and different etching liquids are contained in the two or more etching agent barrels. The reagents used for cleaning are mostly organic chemical reagents, such as methanol, ethanol, propanol and ethylene glycol. The provision of multiple cleaning agent barrels allows the use of different reagents for cleaning according to different scenarios, ensuring the cleaning effect and improving the adaptability of the device. Corrosion and passivation often use acids, alkalis and some strong oxidizing reagents such as hydrochloric acid, nitric acid, potassium hydroxide and hydrogen peroxide. Different reagents or mixed reagents are required to achieve different results during the corrosion and passivation process. The provision of multiple passivating agent barrels and multiple etching agent barrels enables the device to provide different passivation and etching reagents according to different scenarios, ensuring the passivation and etching effects and improving the adaptability of the device.

[0009] Furthermore, in the aforementioned automatic wafer cleaning, etching, and passivation device, the liquid storage room includes a passivation liquid room, an etching liquid room, and a cleaning liquid room. The pump group includes a passivation liquid input pump group and a passivation liquid output pump, an etching liquid input pump group and an etching liquid output pump, and a cleaning liquid pump group. The cleaning agent barrel and the cleaning liquid pump group are located in the cleaning liquid room, the passivation agent barrel, the passivation liquid input pump group, and the passivation liquid output pump are located in the passivation liquid room, and the etching agent barrel, the etching liquid input pump group, and the etching liquid output pump are located in the etching liquid room. A passivation mixing barrel is located in the passivation liquid room, and an etching mixing barrel is located in the etching liquid room. Two or more passivation agent barrels are connected by a passivation liquid input pump group and a passivation mixing barrel pipeline, and the passivation mixing barrel is connected by a passivation liquid output pump and a passivation beaker pipeline. The passivation liquid input pump group pumps passivation liquid from the two or more passivation agent barrels into the passivation mixing barrel for mixing, and the passivation liquid output pump pumps the mixed passivation liquid from the passivation mixing barrel into the passivation beaker. Two or more corrosive agent barrels are connected via a corrosive liquid input pump assembly to a corrosive mixing barrel pipe. The corrosive mixing barrel is connected to a corrosive beaker pipe via a corrosive liquid output pump. The corrosive liquid input pump assembly pumps corrosive liquid from the two or more corrosive agent barrels into the corrosive mixing barrel for mixing, while the corrosive liquid output pump pumps the mixed liquid from the corrosive mixing barrel into the corrosive beaker. Cleaning agent barrels are connected to the cleaning machine pipe via a cleaning liquid pump assembly, which pumps the cleaning agent from the two or more cleaning agent barrels into the cleaning machine chamber. The liquid storage room is divided into a passivation liquid room, a corrosive liquid room, and a cleaning liquid room, each storing the passivation agent barrel, corrosive agent barrel, and cleaning agent barrel separately. This effectively utilizes the upper and lower space of the chamber, reduces the chamber volume, and improves the convenience of the installation. Reagents are arranged in layers to enhance the layout. Furthermore, the passivation mixing barrel and the corrosive mixing barrel allow different passivation and corrosive reagents to be mixed in advance, reducing surface treatment waiting time and improving surface treatment efficiency. Pre-mixing reagents ensures surface treatment stability.

[0010] Furthermore, in the aforementioned automated wafer cleaning, etching, and passivation apparatus, magnetic stirrers are connected to the undersides of the passivation mixing barrel and the etching mixing barrel, respectively, to stir and mix the liquids within the passivation mixing barrel and the etching mixing barrel, respectively. Magnetic stirring bars are placed in each of the passivation mixing barrel and the etching mixing barrel, respectively, and the magnetic stirrers drive the magnetic stirring bars to stir and mix the various reagents within the passivation mixing barrel and the etching mixing barrel, ensuring sufficient mixing of the various reagents and ensuring the stability of the surface treatment.

[0011] Furthermore, in the aforementioned automatic wafer cleaning, etching, and passivation apparatus, the cleaning machine comprises a cleaning chamber, a passivation cleaning chamber, and an etching cleaning chamber. The cleaning chamber is provided with a cleaning agent, the passivation cleaning chamber is provided with a passivation cleaning agent, and the etching cleaning chamber is provided with an etching cleaning agent. The cleaning chamber comprises a first cleaning chamber and a second cleaning chamber, and the cleaning agent barrels comprise a first cleaning agent barrel, a second cleaning agent barrel, a passivation cleaning agent barrel, and an etching cleaning agent barrel. The cleaning liquid pump assembly comprises a first cleaning pump, a second cleaning pump, a passivation cleaning agent pump, and an etching cleaning agent pump. The first cleaning agent barrel is connected to the first cleaning chamber via a pipeline connected to the first cleaning chamber, and the first cleaning pump pumps the cleaning agent in the first cleaning agent barrel into the first cleaning chamber. The second cleaning agent barrel is connected to the second cleaning chamber via a pipeline connected to the second cleaning chamber, and the second cleaning pump pumps the cleaning agent in the second cleaning agent barrel into the second cleaning chamber. The passivation cleaning agent barrel is connected to the passivation cleaning chamber via a pipeline connected to the passivation cleaning chamber, and the passivation cleaning agent pump pumps the passivation cleaning liquid in the passivation cleaning agent barrel into the passivation cleaning chamber. The corrosion cleaning agent barrel is connected to the corrosion cleaning chamber pipeline through the corrosion cleaning agent pump, and the corrosion cleaning agent pump pumps the cleaning liquid in the corrosion cleaning agent barrel into the corrosion cleaning chamber. Before the surface treatment of the wafer, the wafer is transferred to the first cleaning chamber for cleaning. After cleaning, the wafer is transferred to the second cleaning chamber for cleaning. The cleaned wafer is then transferred to the corrosion beaker for corrosion. After corrosion is completed, the wafer in the corrosion beaker is transferred to the corrosion cleaning chamber for cleaning. The cleaned wafer is then transferred to the passivation beaker for passivation. After passivation is completed, the transfer device transfers the wafer in the passivation beaker to the passivation cleaning chamber for cleaning. When cleaning is completed, all surface treatment processes are completed. The first cleaning chamber and the second cleaning chamber are set up to clean the wafer in steps, which can ensure the cleaning effect. The wafer after corrosion is completed is transferred to the corrosion cleaning chamber for cleaning. The wafer after passivation is completed is transferred to the passivation cleaning chamber for cleaning. This can avoid residual reagents from the previous process being brought into the subsequent process, avoid affecting the surface treatment effect, and improve the stability of the surface treatment.

[0012] Furthermore, in the aforementioned automatic wafer cleaning, etching, and passivation device, the transfer device includes a crossbeam, the ends of which are connected to the side walls of the housing, the crossbeam being arranged horizontally, the crossbeam being horizontally connected to a first screw, the crossbeam being slidably connected to a vertical plate, the first screw being drivably connected to the vertical plate, one end of the first screw being drivably connected to a first motor, the first motor being connected to the crossbeam, and the first motor driving the vertical plate to move left and right along the crossbeam via the screw. A clamping jaw is slidably connected to the vertical plate, the vertical plate being vertically connected to a second screw, the second screw being drivably connected to the clamping jaw, the upper end of the second screw being drivably connected to a second motor, the second motor being connected to the vertical plate, and the second motor driving the clamping jaw up and down via the second screw, thereby gripping the wafer being transferred. The clamping jaw comprises two cylindrical bodies that can be brought closer and further apart, the cylindrical bodies enabling the clamping jaw to grip the wafer being transferred. The clamping jaw is raised and lowered by the second motor, and in combination with the first motor driving the vertical plate to move left and right, thereby driving the clamping jaw to move left and right, thereby transferring the wafer from the material platform to the surface treatment device. The control system controls the start and stop of the clamping jaw, the first motor, and the second motor to achieve fully automatic transfer, reducing manual intervention.

[0013] Furthermore, in the above-mentioned automatic wafer cleaning, etching and passivation device, a material storage dish is provided on the top surface of the material platform, and one or more grooves are provided on the top surface of the material storage dish. During surface treatment, the wafers are arrayed in the grooves of the material storage dish. A support arm is integrally connected to the top surface of the material storage dish, and the support arm is long and narrow. During the surface treatment process, the clamping claws clamp the support arm and transport the material storage dish to the cleaning machine, etching beaker, and passivation beaker for surface treatment. The clamping claws clamp the support arm to transport the material storage dish to avoid direct contact with the wafers and to avoid the clamps from extending into the cleaning machine, etching beaker, and passivation beaker, thereby reducing the contact between various reagents and the clamps and extending the service life of the clamps. The wafers are arrayed in the grooves of the material storage dish, and the grooves are provided with fixed buckles, which can fix the wafers and separate the wafers at the same time to ensure the quality of surface treatment. Processing multiple wafers at a time can reduce the number of manual interventions, thereby improving the efficiency of surface treatment.

[0014] Furthermore, in the aforementioned automatic wafer cleaning, etching, and passivation device, one or more storage vessels are provided, arranged around the center of the material platform. The material platform is circular, with a base disposed on its underside. The material platform is rotatably connected to the top surface of the base. A material motor is disposed on one side of the base. The motor is connected to the material platform via a transmission mechanism within the base, driving the rotation of the material platform. The rotatable material platform is configured with multiple workstations. By rotating the material platform, the gripper grasps the storage vessels from the same position, enabling the gripper to grasp multiple storage vessels at once, thereby improving surface treatment efficiency.

[0015] The technical scheme can be seen as having the following beneficial effects: The wafer automatic cleaning, etching and passivation device has the following beneficial effects: the whole surface treatment process is automatically performed without manual intervention, the stability of the surface treatment process can be ensured, and the stability of wafer performance testing can be ensured. The surface treatment is automatically performed in the box, the operator can be prevented from contacting the toxic liquid, and the health and safety of the operator can be ensured. The box is divided into a working room and a liquid storage room, when the reagent needs to be supplemented, the working room does not need to be opened, the toxic gas generated in the surface treatment process can be prevented from escaping, the environmental pollution can be reduced, and the health and safety of the human body can be protected. The reagent is pumped into the cleaning machine, the etching beaker and the passivation beaker by the pump set, the reagent can be automatically supplemented in the surface treatment process, the continuous operation can be realized, the manual intervention can be reduced, the production efficiency can be improved, the reagent can be supplemented in time, the reagent concentration in the surface treatment process can be ensured, the reagent concentration fluctuation can be prevented from affecting the surface treatment quality, and the stability of the surface treatment process can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 It is a front view of the wafer automatic cleaning, etching and passivation device of the utility model;

[0017] Figure 2 It is a top view of the wafer automatic cleaning, etching and passivation device of the utility model;

[0018] Figure 3 It is a structure schematic view of the liquid storage room;

[0019] Figure 4 It is a structure schematic view of the utility model.

[0020] Figure: 1, box, 10, cleaning agent tank, 101, first cleaning agent tank, 102, second cleaning agent tank, 11, passivation agent tank, 12, etchant tank, 13, pump group, 131, passivation liquid input pump group, 132, passivation liquid output pump, 133, etchant liquid input pump group, 134, etchant liquid output pump, 135, cleaning liquid pump group, 1351, first cleaning pump, 1352, second cleaning pump, 1353, passivation cleaning pump, 1354, etchant cleaning pump, 14, sliding door, 15, magnetic stirrer, 16, passivation mixing tank, 17, etchant mixing tank, 18, working room, 19, liquid storage room, 191, passivation liquid room, 192, etchant liquid room, 193, cleaning liquid room, 2, material platform, 21, base, 22, material motor, 23, material storage dish, 24, support arm, 3, surface treatment device, 31, cleaning machine, 311, cleaning chamber, 3111, first cleaning chamber, 3112, second cleaning chamber, 312, passivation cleaning chamber, 313, etchant cleaning chamber, 32, etchant beaker, 33, passivation beaker, 4, transfer device, 41, cross beam, 42, vertical plate, 43, first lead screw, 44, clamping jaw, 45, second lead screw, 46, first motor, 47, second motor. DETAILED DESCRIPTION

[0021] Example 1

[0022] As Figure 1-2The device for automatically cleaning, etching, and passivating wafers shown includes a housing 1, with a material platform 2 and a surface treatment device 3 connected to the bottom of the housing 1. The material platform 2 and the surface treatment device 3 are arranged adjacent to each other. A transfer device 4 is provided above the material platform 2 and the surface treatment device 3. The transfer device 4 is connected to the side walls of the housing 1 at both ends. The transfer device 4 transfers the wafers on the material platform 2 to the surface treatment device 3 for surface treatment. The surface treatment device 3 includes a cleaning machine 31, an etching beaker 32, and a passivation beaker 33. The cleaning chamber of the cleaning machine 31 is provided with a cleaning liquid, the etching beaker 32 is provided with an etching liquid, and the passivation beaker 33 is provided with a passivation liquid. The cleaning chamber of the cleaning machine 31, the etching beaker 32, and the passivation beaker 33 are made of acid- and alkali-resistant polytetrafluoroethylene, and the surfaces of the cleaning machine 31 and the transfer device 4 are coated with an acid- and alkali-resistant coating. The housing 1 is provided with a cleaning agent barrel 10, a passivating agent barrel 11, and an etching agent barrel 12. The cleaning agent barrel 10 is provided with a cleaning agent, the passivating agent barrel 11 is provided with a passivating liquid, and the etching agent barrel 12 is provided with an etching liquid. The cleaning agent barrel 10, the passivating agent barrel 11, and the etching agent barrel 12 are connected to a pump group 13 through pipes. The pump group 13 pumps the cleaning agent in the cleaning agent barrel 10 into the cleaning machine 31, the pump group 13 pumps the passivating liquid in the passivating agent barrel 11 into the passivation beaker 33, and the pump group 13 pumps the etching liquid in the etching agent barrel 12 into the etching beaker 32. The above-mentioned pump group 13 is configured as a plurality of peristaltic pumps, and all connecting pipes are made of acid and alkali resistant polytetrafluoroethylene. The cabinet 1 is equipped with a sliding door 14, which divides the cabinet 1 into a work area 18 and a liquid storage area 19. Each of these areas has a door. The material platform 2, surface treatment device 3, and transfer device 4 are located in the work area 18. The cleaning agent barrel 10, passivation agent barrel 11, etchant barrel 12, and pump unit 13 are located in the liquid storage area 19. There are two or more cleaning agent barrels 10, each containing different cleaning agents. There are two or more passivation agent barrels 11, each containing different passivating solutions. There are two or more etchant barrels 12, each containing different etchant solutions.

[0023] The cleaning machine 31 is equipped with a cleaning chamber 311, a passivation cleaning chamber 312, and a corrosion cleaning chamber 313. The cleaning chamber 311 is equipped with cleaning agent, the passivation cleaning chamber 312 is equipped with passivation cleaning agent, and the corrosion cleaning chamber 313 is equipped with corrosion cleaning agent. The cleaning chamber 311 includes a first cleaning chamber 3111 and a second cleaning chamber 3112. The cleaning agent barrel 10 includes a first cleaning agent barrel 101, a second cleaning agent barrel 102, a passivation cleaning agent barrel, and a corrosion cleaning agent barrel. The cleaning liquid pump assembly 135 includes a first cleaning pump 1351, a second cleaning pump 1352, a passivation cleaning agent pump 1353, and a corrosion cleaning agent pump 1354. The first cleaning agent barrel 101 is connected to the first cleaning chamber 3111 via a pipeline. The first cleaning pump 1351 pumps the cleaning agent in the first cleaning agent barrel 101 into the first cleaning chamber 3111. The second cleaning agent barrel 102 is connected to the second cleaning chamber 3112 via a pipeline via a second cleaning pump 1352. The second cleaning pump 1352 pumps the cleaning agent in the second cleaning agent barrel 102 into the second cleaning chamber 3112. The passivation cleaning agent barrel is connected to the passivation cleaning chamber 312 via a pipeline via a passivation cleaning agent pump 1353. The passivation cleaning agent pump 1353 pumps the passivation cleaning solution in the passivation cleaning agent barrel into the passivation cleaning chamber 312. The corrosion cleaning agent barrel is connected to the corrosion cleaning chamber 313 via a pipeline via a corrosion cleaning agent pump 1354. The corrosion cleaning agent pump 1354 pumps the cleaning solution in the corrosion cleaning agent barrel into the corrosion cleaning chamber 313.

[0024] During the use of the present invention, the liquid in the cleaning agent barrel 10 is pumped into the cleaning machine 31 through the pump group 13, the liquid in the passivation agent barrel 11 is pumped into the passivation beaker 33, and the liquid in the etching agent barrel 12 is pumped into the etching beaker 32. The wafer is placed on the surface of the material platform 2, and then the transfer device 4 transfers the wafer on the material platform 2 to the surface treatment device 3 for surface treatment. The transfer device 4 first transfers the wafer to the cleaning machine 31 for cleaning. Specifically, the process includes transferring the wafer to the first cleaning chamber 3111 for cleaning, transferring the wafer to the second cleaning chamber 3112 for cleaning after cleaning, and then transferring the wafer in the cleaning machine 31 to the corrosion beaker 32 for corrosion. After corrosion is completed, the transfer device 4 transfers the wafer in the corrosion beaker 32 to the corrosion cleaning chamber 313 for cleaning, and then transferring the wafer in the corrosion cleaning chamber 313 to the passivation beaker 33 for passivation. After passivation is completed, the transfer device 4 transfers the wafer in the passivation beaker 33 to the passivation cleaning chamber 312 for cleaning. Cleaning is completed, that is, all surface treatment processes are completed.

[0025] The cleaning machine 31 uses ultrasonic cleaning agent. When cleaning, the ultrasonic cleaning machine needs to work according to the set power, temperature and duration to ensure that the cleaning is in place. During the continuous processing process, the pump group 13 extracts the reagents for replenishment.

[0026] like Figure 3 In the illustrated automatic wafer cleaning, etching, and passivation apparatus, the liquid storage room 19 includes a passivation liquid room 191, an etching liquid room 192, and a cleaning liquid room 193. The pump assembly 13 includes a passivation liquid input pump assembly 131 and a passivation liquid output pump 132, an etching liquid input pump assembly 133 and an etching liquid output pump 134, and a cleaning liquid pump assembly 135. The cleaning agent barrel 10 and the cleaning liquid pump assembly 135 are located in the cleaning liquid room 193, the passivation agent barrel 11, the passivation liquid input pump assembly 131, and the passivation liquid output pump 132 are located in the passivation liquid room 191, and the etching agent barrel 12, the etching liquid input pump assembly 133, and the etching liquid output pump 134 are located in the etching liquid room 192. A passivation mixing barrel 16 is provided in the passivation liquid room 191, and a corrosion mixing barrel 17 is provided in the corrosion liquid room 192. Two or more passivation agent barrels 11 are connected to the passivation mixing barrel 16 through a passivation liquid input pump group 131, and the passivation mixing barrel 16 is connected to the passivation beaker 33 through a passivation liquid output pump 132. The passivation liquid input pump group 131 draws the passivation liquid in the two or more passivation agent barrels 11 into the passivation mixing barrel 16 for mixing, and the passivation liquid output pump 132 pumps the mixed passivation liquid in the passivation mixing barrel 16 into the passivation beaker 33. Two or more corrosive agent barrels 12 are connected to the corrosive mixing barrel 17 via a corrosive liquid input pump assembly 133. The corrosive mixing barrel 17 is connected to the corrosive beaker 32 via a corrosive liquid output pump 134. The corrosive liquid input pump assembly 133 pumps the corrosive liquid from the two or more corrosive agent barrels 12 into the corrosive mixing barrel 17 for mixing. The corrosive liquid output pump 134 pumps the mixed liquid from the corrosive mixing barrel 17 into the corrosive beaker 32. The cleaning agent barrel 10 is connected to the cleaning machine 31 via a cleaning liquid pump assembly 135. The cleaning liquid pump assembly 135 pumps the cleaning liquid from the two or more cleaning agent barrels 10 into the chamber of the cleaning machine 31. Magnetic stirrers 15 are connected to the lower sides of the passivation mixing barrel 16 and the corrosion mixing barrel 17, respectively, to stir and mix the liquids in the passivation mixing barrel 16 and the corrosion mixing barrel 17. Magnetic stirring bars are placed in the passivation mixing barrel 16 and the corrosion mixing barrel 17 respectively. The magnetic stirrer 15 drives the magnetic stirring bars to stir and mix the various reagents in the passivation mixing barrel 16 and the corrosion mixing barrel 17 respectively.

[0027] like Figure 4The wafer automatic cleaning, etching and passivation device shown in the figure comprises a transfer device 4 comprising a crossbeam 41, the two ends of which are connected to the side walls of the box body 1, the crossbeam 41 being arranged horizontally, the crossbeam 41 being horizontally connected to a first screw rod 43, the crossbeam 41 being slidably connected to a vertical plate 42, the first screw rod 43 and the vertical plate 42 being driven and connected, one end of the first screw rod 43 being driven and connected to a first motor 46, the first motor 46 being connected to the crossbeam 41, the first motor 46 driving the vertical plate 42 to move left and right along the crossbeam 41 via the screw rod 43. The vertical plate 42 is slidably connected to a clamping jaw 44, the vertical plate 42 being vertically connected to a second screw rod 45, the second screw rod 45 being driven and connected to the clamping jaw 44, the upper end of the second screw rod 45 being driven and connected to a second motor 47, the second motor 47 being connected to the vertical plate 42, the second motor 47 driving the clamping jaw 44 to move up and down via the second screw rod 45, and the clamping jaw 44 clamping the transfer wafer. The gripper 44 comprises two cylindrical bodies that can be brought together and separated, and the gripper 44 uses these cylindrical bodies to grip and transport wafers. A storage vessel 23 is located on the top surface of the material platform 2. This vessel 23 has one or more grooves formed in its top surface. An elongated support arm 24 is integrally connected to the top surface of the vessel 23. One or more storage vessels 23 are arranged around the center of the circular material platform 2. A base 21 is located on the underside of the material platform 2, which is rotatably connected to the top surface of the base 21. A feed motor 22 is located on one side of the base 21. This motor 22 is connected to the material platform 2 through a transmission mechanism within the base 21, driving the rotation of the material platform 2. Multiple wafers are placed in the grooves. A second motor 47 drives the gripper 44 downward, gripping the support arm 24. The second motor 47 then drives the gripper 44 upward, driving the feed vessel 23 upward. The first motor 46 drives the vertical plate 42 to move, which in turn drives the clamp 44 to the upper side of the surface treatment device. The second motor 47 drives the clamp 44 downward, and the clamp 44 drives the storage dish 23 into the surface treatment device 3 for surface treatment. During the treatment process, the second motor 47 and the first motor 46 are repeatedly activated to drive the clamp 44 upward and downward. Surface treatment is performed in the first cleaning chamber 3111, the second cleaning chamber 3112, the passivation cleaning chamber 312, the etching cleaning chamber 313, the etching beaker 32, and the passivation beaker 33, completing the surface treatment process. The clamp 44 then moves to the upper side of the material platform 2 and places the surface-treated storage dish 23 on the material platform 2. The material platform 2 then rotates to clamp the support arm 24 of another storage dish 23, and the above steps are repeated for surface treatment. This reciprocating process continues.

[0028] The above embodiments are illustrative and intended to illustrate the technical concepts and features of the present invention so that those skilled in the art can understand the present invention and implement it accordingly. They are not intended to limit the scope of protection of the present invention. Any equivalent changes or modifications based on the spirit of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A wafer automatic cleaning, etching and passivation device, characterized in that: The invention comprises a box body (1), wherein a material platform (2) and a surface treatment device (3) are connected to the bottom of the box body (1), and the material platform (2) and the surface treatment device (3) are arranged adjacent to each other; a transfer device (4) is arranged on the upper side of the material platform (2) and the surface treatment device (3), and both ends of the transfer device (4) are connected to the side wall of the box body (1); the transfer device (4) transfers the wafer on the material platform (2) to the surface treatment device (3) for surface treatment; the surface treatment device (3) comprises a cleaning machine (31), a corrosion beaker (32), and a passivation beaker (33); the cleaning machine (31) is provided with a cleaning chamber provided with a cleaning liquid, the corrosion beaker (32) is provided with a corrosion liquid, and the passivation beaker (33) is provided with a passivation liquid.

2. The automatic wafer cleaning, etching and passivation device according to claim 1, characterized in that: The box (1) is provided with a cleaning agent barrel (10), a passivating agent barrel (11), and an etching agent barrel (12). The cleaning agent barrel (10) is provided with a cleaning agent, the passivating agent barrel (11) is provided with a passivating liquid, and the etching agent barrel (12) is provided with an etching liquid. The cleaning agent barrel (10), the passivating agent barrel (11), and the etching agent barrel (12) are connected to a pump group (13) through pipelines. The pump group (13) pumps the cleaning agent in the cleaning agent barrel (10) into the cleaning machine (31), the pump group (13) pumps the passivating liquid in the passivating agent barrel (11) into the passivation beaker (33), and the pump group (13) pumps the etching liquid in the etching agent barrel (12) into the etching beaker (32).

3. The automatic wafer cleaning, etching and passivation device according to claim 2, characterized in that: The box body (1) is provided with a sliding door (14), and the sliding door (14) divides the box body (1) into a workroom (18) and a liquid storage room (19). The material platform (2), the surface treatment device (3) and the transfer device (4) are arranged in the workroom (18), and the cleaning agent barrel (10), the passivation agent barrel (11), the corrosive agent barrel (12) and the pump group (13) are arranged in the liquid storage room (19).

4. The automatic wafer cleaning, etching and passivation device according to claim 3, characterized in that: There are two or more cleaning agent barrels (10), and different cleaning agents are contained in the two or more cleaning agent barrels (10); there are two or more passivating agent barrels (11), and different passivating liquids are contained in the two or more passivating agent barrels (11); there are two or more corrosive agent barrels (12), and different corrosive liquids are contained in the two or more corrosive agent barrels (12).

5. The automatic wafer cleaning, etching and passivation device according to claim 4, characterized in that: The liquid storage room (19) includes a passivation liquid room (191), a corrosion liquid room (192), and a cleaning liquid room (193); the pump group (13) includes a passivation liquid input pump group (131) and a passivation liquid output pump (132), a corrosion liquid input pump group (133) and a corrosion liquid output pump (134), and a cleaning liquid pump group (135); the cleaning agent barrel (10) and the cleaning liquid pump group (135) are arranged in the cleaning liquid room (193); the passivation agent barrel (11), the passivation liquid input pump group (131) and the passivation liquid output pump (135) are arranged in the cleaning liquid room (193); the passivation agent barrel (11), the passivation liquid input pump group (131) and the passivation liquid output pump (132) are arranged in the cleaning liquid room (193); the passivation agent barrel (11), the passivation liquid input pump group (131) and the passivation liquid output pump (134) are arranged in the cleaning liquid room (193); the passivation agent barrel (11), the passivation liquid input pump group (131) and the passivation liquid output pump (134) are arranged in the cleaning liquid room (193); the passivation agent barrel (11) and ... 32) is located in the passivation liquid room (191), the corrosive agent barrel (12), the corrosive liquid input pump group (133) and the corrosive liquid output pump (134) are located in the corrosive liquid room (192); a passivation mixing barrel (16) is provided in the passivation liquid room (191), and a corrosive mixing barrel (17) is provided in the corrosive liquid room (192). Two or more passivation agent barrels (11) are connected through a passivation liquid input pump group (131) and a passivation mixing barrel (16) through a pipe. The passivation mixing barrel (16) is connected through a passivation liquid output pump (132). The passivation liquid input pump group (131) pumps the passivation liquid in two or more passivation agent barrels (11) into the passivation mixing barrel (16) for mixing, and the passivation liquid output pump (132) pumps the mixed passivation liquid in the passivation mixing barrel (16) into the passivation beaker (33); the two or more corrosive agent barrels (12) are connected to the corrosion mixing barrel (17) through the corrosion liquid input pump group (133), and the corrosion mixing barrel (17) is connected to the corrosion beaker through the corrosion liquid output pump (134). (32) pipeline connection, the corrosive liquid input pump group (133) draws the corrosive liquid in two or more corrosive agent barrels (12) into the corrosion mixing barrel (17) for mixing, and the corrosive liquid output pump (134) pumps the mixed liquid in the corrosion mixing barrel (17) into the corrosion beaker (32); the cleaning agent barrel (10) is connected to the cleaning machine (31) pipeline through the cleaning liquid pump group (135), and the cleaning liquid pump group (135) pumps the cleaning agents in the two or more cleaning agent barrels (10) into the chamber of the cleaning machine (31) respectively.

6. The automatic wafer cleaning, etching and passivation device according to claim 5, characterized in that: The lower sides of the passivation mixing barrel (16) and the corrosion mixing barrel (17) are respectively connected to magnetic stirrers (15), and the magnetic stirrers (15) stir and mix the liquids in the passivation mixing barrel (16) and the corrosion mixing barrel (17).

7. The automatic wafer cleaning, etching and passivation device according to claim 5, characterized in that: The cleaning machine (31) is provided with a cleaning chamber (311), a passivation cleaning chamber (312), and a corrosion cleaning chamber (313); the cleaning chamber (311) includes a first cleaning chamber (3111) and a second cleaning chamber (3112); the cleaning agent barrel (10) includes a first cleaning agent barrel (101), a second cleaning agent barrel (102), a passivation cleaning agent barrel, and a corrosion cleaning agent barrel; the cleaning liquid pump group (135) includes a first cleaning pump (1351), a second cleaning pump (1352), a passivation cleaning agent pump (1353), and a corrosion cleaning agent pump (1354); the first cleaning agent barrel (101) is connected to the first cleaning chamber (3111) via a pipeline of the first cleaning pump (1351); the first cleaning pump (1351) pumps the cleaning agent in the first cleaning agent barrel (101) into the cleaning chamber (3111); The second cleaning agent barrel (102) is connected to the second cleaning chamber (3112) through a second cleaning pump (1352), and the second cleaning pump (1352) pumps the cleaning agent in the second cleaning agent barrel (102) into the second cleaning chamber (3112); the passivation cleaning agent barrel is connected to the passivation cleaning chamber (312) through a passivation cleaning agent pump (1353), and the passivation cleaning agent pump (1353) pumps the passivation cleaning liquid in the passivation cleaning agent barrel into the passivation cleaning chamber (312); the corrosion cleaning agent barrel is connected to the corrosion cleaning chamber (313) through a corrosion cleaning agent pump (1354), and the corrosion cleaning agent pump (1354) pumps the cleaning liquid in the corrosion cleaning agent barrel into the corrosion cleaning chamber (313).

8. The automatic wafer cleaning, etching and passivation device according to claim 1, characterized in that: The transfer device (4) includes a crossbeam (41), both ends of which are connected to the side walls of the box body (1), the crossbeam (41) is arranged horizontally, the crossbeam (41) is horizontally connected to a first screw rod (43), the crossbeam (41) is slidably connected to a vertical plate (42), the first screw rod (43) and the vertical plate (42) are drivingly connected, one end of the first screw rod (43) is drivingly connected to a first motor (46), the first motor (46) is connected to the crossbeam (41), and the first motor (46) is driven by the screw rod (43). ) drives the vertical plate (42) to move left and right along the crossbeam (41); the vertical plate (42) is slidably connected to a clamping claw (44), the vertical plate (42) is vertically connected to a second screw rod (45), the second screw rod (45) and the clamping claw (44) are drive-connected, the upper end of the second screw rod (45) is drive-connected to a second motor (47), the second motor (47) is connected to the vertical plate (42), the second motor (47) drives the clamping claw (44) to move up and down through the second screw rod (45), and the clamping claw (44) clamps the transfer chip.

9. The automatic wafer cleaning, etching and passivation device according to claim 1, characterized in that: The top surface of the material platform (2) is provided with a material storage dish (23), and the top surface of the material storage dish (23) is provided with one or more grooves; the top surface of the material storage dish (23) is integrally connected with a support arm (24).

10. The automatic wafer cleaning, etching and passivation device according to claim 9, characterized in that: The material storage dish (23) is provided with one or more, and the material storage dish (23) is arranged around the center of the material platform (2); the material platform (2) is set to be circular, and a base (21) is provided on the lower side of the material platform (2), and the material platform (2) can be rotatably connected to the top surface of the base (21); a material motor (22) is provided on one side of the base (21), and the material motor (22) is connected to the material platform (2) through a transmission mechanism provided in the base (21), and the material motor (22) drives the material platform (2) to rotate.

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