Visual descent method halide crystal growth device
By designing a visual descent method halide crystal growth device, the problem that traditional devices cannot observe in real time is solved, real-time observation and early intervention are achieved, waste of materials and time is avoided, and production costs are reduced.
Patent Information
- Application Number
- CN202422959682.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-02
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-12-02
AI Technical Summary
The traditional descending method halide crystal growth device cannot observe the crystal growth in real time, resulting in a waste of materials and time, and the contact between the crucible and the crystal can easily lead to polycrystalline or cracking.
A halide crystal growth device using the visual descent method is designed, which includes an upper heating zone, a gradient zone, and a lower heating zone. A transparent quartz ring and an observation hole are used to achieve real-time observation. A transparent quartz crucible and a seed crystal structure are combined to avoid the contact between the crucible and the crystal.
Real-time observation of crystal growth is achieved, which reduces time and material waste, avoids polycrystallinity or cracking, and reduces production costs.
Smart Images
Figure CN223445681U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The embodiment of the utility model relates to a crystal growth device, in particular to a visual descending method halide crystal growth device. BACKGROUND
[0002] Inorganic scintillators can be used for rapid, sensitive and accurate determination of gamma rays, and are applied in radionuclide identification, safety inspection, environmental monitoring, nuclear medical imaging and many other fields. Among them, halide scintillation crystals have excellent scintillation performance such as high light yield and good energy resolution, and also have the characteristics of low melting point, can be grown in a descending furnace using a quartz crucible, and are widely used.
[0003] In the process of growing halide crystals by the traditional descending method halide crystal growth device using a descending furnace, due to the limitations of the crucible or the non-transparent light condition of the thermal field, the crystal growth condition cannot be observed in real time. Whether the crystal is polycrystalline or cracked, the entire process needs to be completed according to the set program, and if there is cracking, it will cause waste of material and energy. In addition, due to the influence of the contact between the crucible and the crystal during the descending method crystal growth process, polycrystalline or even cracking is prone to occur, so early detection and early intervention of crystal growth can avoid or reduce the waste of time and material energy. UTILITY MODEL CONTENT
[0004] The purpose of the embodiment of the utility model is to provide a visual descending method halide crystal growth device and a control method thereof, which is simple and convenient, can effectively avoid the situation that the traditional descending furnace cannot be observed, can greatly save the time cost of the low-temperature halide crystal growth process, avoid or reduce the waste of time and material energy, and reduce the production cost.
[0005] In order to achieve the above purpose, the embodiment of the utility model designs a visual descending method halide crystal growth device, which comprises:
[0006] An upper heating zone is arranged above the visual descending method halide crystal growth device.
[0007] A gradient zone is arranged below the upper heating zone along the central axis direction.
[0008] A lower heating zone is arranged below the gradient zone along the central axis direction.
[0009] A crucible is arranged in the middle of the upper heating zone.
[0010] In the upper heating zone, the gradient zone and the lower heating zone form a cavity, and the crystal grows from top to bottom in the cavity.
[0011] Further, in the visual descending method halide crystal growth device, the upper heating area, the gradient area and the center line of the lower heating area are on the same axis.
[0012] Further, in the visual descending method halide crystal growth device, the upper heating area further comprises:
[0013] A crucible is arranged inside the upper heating area;
[0014] A crucible support rod is arranged outside the upper heating area;
[0015] A first heating wire is arranged outside the crucible;
[0016] An upper cylinder is arranged outside the first heating wire;
[0017] A heat preservation cover plate is arranged above the upper cylinder.
[0018] Further, in the visual descending method halide crystal growth device, the gradient area further comprises:
[0019] A quartz ring is arranged inside the gradient area;
[0020] A heat preservation barrel is arranged outside the quartz ring;
[0021] An observation hole is arranged on the lateral surface of the heat preservation barrel;
[0022] A quartz sheet is arranged inside the observation hole.
[0023] Further, in the visual descending method halide crystal growth device, the lower heating area further comprises:
[0024] A lower cylinder is arranged outside the crucible support rod of the upper heating area;
[0025] A second heating wire is arranged inside the lower cylinder;
[0026] A seed crystal is arranged inside the crucible support rod and connected with a temperature measuring thermocouple and the crucible;
[0027] A temperature control thermocouple is arranged on one side of the crucible.
[0028] Further, in the visual descending method halide crystal growth device, the crucible is a quartz crucible, and the lower end of the crucible is provided with a thin tube structure for placing the seed crystal.
[0029] Further, in the visual descending method halide crystal growth device, the quartz ring is a transparent quartz ring, and the height of the quartz ring is 3-10 cm.
[0030] Further, in the visual descending method halide crystal growth device, the material of the upper cylinder of the upper heating area, the heat preservation cover plate, and the lower cylinder of the lower heating area is alumina or aluminum silicate fiber cotton.
[0031] Further, in the visual descending method halide crystal growth device, the material of the heat preservation barrel is alumina or aluminum silicate fiber cotton.
[0032] Further, in the visual descending method halide crystal growth device, the seed crystal is a halide seed crystal.
[0033] Compared with the prior art, the embodiment of the present application sets the upper heating area above the visual descending method halide crystal growth device, sets the gradient area below the upper heating area along the central axis direction, sets the lower heating area below the gradient area along the central axis direction, sets the crucible in the middle of the upper heating area, and the crystal grows from top to bottom in the cavity formed by the upper heating area, the gradient area and the lower heating area. BRIEF DESCRIPTION OF DRAWINGS
[0034] Figure 1 is a structural schematic view of the present application;
[0035] Figure 2 is a directional schematic view of A-A. DETAILED DESCRIPTION
[0036] In order to make the purpose, technical scheme and advantages of the utility model clearer, the various embodiments of the utility model will be described in detail below with reference to the drawings. However, those skilled in the art can understand that, in the various embodiments of the utility model, many technical details are proposed in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed by the various claims of the present application can be implemented.
[0037] The embodiments of the utility model relate to a visual descending method halide crystal growth device, as shown in Figure 1 and Figure 2 , comprising:
[0038] The upper heating area 1 is arranged above the visual descending method halide crystal growth device in the embodiment;
[0039] The gradient area 2 is arranged below the upper heating area 1 along the central axis direction;
[0040] The lower heating area 3 is arranged below the gradient area 2 along the central axis direction;
[0041] The crucible 4 is arranged in the middle of the upper heating area 1;
[0042] The crystal grows from top to bottom in the cavity formed by the upper heating area 1, the gradient area 2 and the lower heating area 3. The upper heating area 1, the gradient area 2 and the lower heating area 3 form the frame structure of the visual descending method halide crystal growth device in the embodiment, and the crucible 4 is arranged in the middle of the upper heating area 1. The embodiment can greatly save the time cost and material energy waste in the low-temperature halide crystal growth process, and solve the problem that, in the process of growing halide crystals by using the descending furnace in the traditional descending method halide crystal growth device, the crystal growth condition cannot be observed in real time due to the limitation of the non-light-transmitting conditions such as the crucible or the heat field. Whether the crystal is polycrystalline or cracked, the entire process needs to be completed according to the set program, and if there is cracking, material energy waste is caused. In addition, the polycrystalline or even cracking is prone to occur due to the influence of the contact between the crucible and the crystal in the descending method crystal growth process, so early detection and early intervention of the crystal growth can avoid or reduce the waste of time and material energy.
[0043] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment, as shown in Figure 1 and Figure 2 , the center lines of the upper heating area 1, the gradient area 2 and the lower heating area 3 are on the same axis.
[0044] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment, as shown in Figure 1 and Figure 2 , the upper heating area 1 further comprises:
[0045] A crucible 4 is arranged inside the upper heating zone 1.
[0046] The crucible 4 is placed on the crucible support rod 5; the crucible support rod 5 extends from the lower heating zone 3 and the gradient zone 2 to the bottom of the crucible 4; the crucible 4 is placed above the crucible support rod 5, and the crucible 4 passes through the crucible support rod 5.
[0047] A first heating wire 9 is wound outside the crucible 4; the first heating wire 9 is used to heat the halide crystal.
[0048] An upper cylinder 16 is wrapped outside the first heating wire 9.
[0049] A heat preservation cover plate 11 is placed above the upper cylinder 16; the upper cylinder 16 and the heat preservation cover plate 11 mainly play a heat preservation role.
[0050] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment, as shown in Figure 1 and Figure 2 The gradient zone 2 further comprises:
[0051] A quartz ring 14 is arranged in the gradient zone 2.
[0052] A fixed heat preservation barrel 7 is wound outside the quartz ring 14.
[0053] An observation hole 8 is horizontally arranged on the side of the heat preservation barrel 7.
[0054] A quartz sheet 15 is fixed in the observation hole 8; the crucible 4 placed on the crucible support rod 5 is observed through the quartz sheet 15 in the observation hole 8, and the crucible 4 and the quartz ring 14 in the heat preservation barrel 7 move together in the furnace to realize crystal growth.
[0055] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment, as shown in Figure 1 and Figure 2 The lower heating zone 3 further comprises:
[0056] A lower cylinder 17 is arranged outside the crucible support rod 5 of the upper heating zone 1; the lower cylinder 17 is used for heat preservation of the lower heating zone 3.
[0057] A second heating wire 10 is wound inside the lower cylinder 17; the second heating wire 10 is used to heat the upper heating zone 1.
[0058] A seed crystal 6 is used to connect the temperature measuring thermocouple 13 and the crucible 4 in the crucible support rod 5; the seed crystal 6 is used to connect the temperature measuring thermocouple 13 and the crucible 4.
[0059] A temperature control thermocouple 12 is arranged on one side of the crucible 4. The temperature control thermocouple 12 controls the temperature in the upper heating zone 1, the gradient zone 2 and the lower heating zone 3.
[0060] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment is as shown in Figure 1 and Figure 2 The crucible 4 is a quartz crucible, and the lower end of the crucible 4 is provided with a thin tube structure in which the seed crystal 6 is arranged.
[0061] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment is as shown in Figure 1 and Figure 2 The quartz ring 14 is a transparent quartz ring, and the height of the quartz ring 14 is 3-10 cm. Different heights of the quartz ring are selected according to the different gradients required for growing different sizes of crystals, and the temperature gradient changes by 5-30 ℃ / cm.
[0062] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment is as shown in Figure 1 and Figure 2 The material of the upper barrel 16 of the upper heating zone 1, the heat preservation cover plate 11 and the lower barrel 17 of the lower heating zone 3 is alumina or aluminum silicate fiber cotton.
[0063] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment is as shown in Figure 1 and Figure 2 The material of the heat preservation barrel 7 is alumina or aluminum silicate fiber cotton.
[0064] In order to achieve the above technical effects, the visual descending method halide crystal growth device in the embodiment is as shown in Figure 1 and Figure 2 The seed crystal 6 is a halide seed crystal.
[0065] The visual descending method halide crystal growth device provided in the embodiment has the following control steps:
[0066] S1: The halide seed crystal 6 is processed in the glove box according to the size of the crucible thin tube, and is arranged at the bottom of the quartz crucible
[0067] S2: Dry halide and dopant raw materials are taken in the glove box, mixed uniformly and loaded into the quartz crucible;
[0068] S3: The quartz crucible loaded with the raw materials is vacuumized and sealed, and then is placed on the crucible support rod 5, and the height is adjusted to the position at which the seed crystal 6 can be observed through the small hole;
[0069] S4: The temperature is raised to form a melt, and the seed crystal is observed through the observation hole to find a suitable crystal growth temperature, and the temperature is kept constant.
[0070] S5: Slowly move the crucible downward, so that the entire crucible 4 passes through the gradient zone; after the crystal growth is completed, slowly cool and remove the crystal.
[0071] The embodiment is directed to low-temperature halide crystals, and transparent quartz crucibles and quartz rings are used to facilitate observation of seed inoculation and crystal growth, and low-temperature halide crystals such as sodium iodide, cesium iodide, lanthanum chloride, etc. can be grown.
[0072] Those skilled in the art can understand that the above-mentioned embodiments are specific embodiments for realizing the present application, and in actual application, various changes can be made in form and details without departing from the spirit and scope of the present application.
Claims
1. A halide crystal growth device using a visible descent method, characterized in that: include: An upper heating zone is provided above the halide crystal growth device using a visible descent method; A gradient zone is provided below the upper heating zone along the central axis; A lower heating zone is provided below the gradient zone along the central axis. a crucible, the crucible being arranged in the middle of the upper heating zone; In the cavity formed by the upper heating zone, the gradient zone and the lower heating zone, the crystal grows from top to bottom.
2. The visible drop method halide crystal growth device according to claim 1, characterized in that: The center lines of the upper heating zone, the gradient zone and the lower heating zone are on the same axis.
3. The visible descent method halide crystal growth device according to claim 1, characterized in that: The upper heating zone further comprises: a crucible, the crucible being arranged inside the upper heating zone; A crucible support rod, on which the crucible is placed; the crucible support rod extends from the lower heating zone and the gradient zone to the bottom of the crucible; a first heating wire, wound around the outside of the crucible; an upper cylinder, wrapping the outer side of the first heating wire; A heat-insulating cover plate is placed above the upper cylinder.
4. The visible descent method halide crystal growth device according to claim 1, characterized in that: The gradient region further comprises: a quartz ring, disposed in the gradient region; A heat preservation barrel is fixed around the outer side of the quartz ring; An observation hole is provided laterally on the side of the heat preservation barrel; A quartz plate is fixed in the observation hole.
5. The visible descent method halide crystal growth device according to claim 1, characterized in that: The lower heating zone further comprises: a lower cylinder, which is arranged outside the crucible support rod in the upper heating zone; a second heating wire, wound around the inner side of the lower cylinder; A seed crystal, connected to a temperature measuring thermocouple and the crucible through the seed crystal in the crucible support rod; A temperature-controlling thermocouple is arranged on one side of the crucible.
6. The visible drop method halide crystal growth device according to claim 5, characterized in that: The crucible is a quartz crucible, and the lower end of the crucible is provided with a thin tube structure for placing the seed crystal.
7. The visible drop method halide crystal growth device according to claim 4, characterized in that: The quartz ring is a transparent quartz ring, and the height of the quartz ring is between 3 cm and 10 cm.
8. The visible descent method halide crystal growth device according to claim 1, characterized in that: The upper cylinder of the upper heating zone, the heat-insulating cover plate and the lower cylinder of the lower heating zone are made of alumina or aluminum silicate fiber cotton.
9. The visible drop method halide crystal growth device according to claim 4, characterized in that: The heat preservation barrel is made of alumina or aluminum silicate fiber cotton.
10. The visible drop method halide crystal growth device according to claim 5, characterized in that: The seed crystals are halide seed crystals.