Clamping mechanism for silicon core growth and silicon core growth equipment
By designing a clamping mechanism for silicon core growth and utilizing the meshing transmission of the transmission shaft and the rotating part, the synchronous drawing of multiple groups of silicon cores is achieved, which solves the problem of low silicon core production efficiency in the existing technology, improves production efficiency and reduces costs.
Patent Information
- Application Number
- CN202422865776.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-23
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-11-23
AI Technical Summary
In the prior art, the polysilicon industry uses zone furnaces to draw silicon cores, which is inefficient and difficult to produce multiple silicon cores efficiently.
A clamping mechanism is designed, including a supporting base, a transmission shaft, a driving member, multiple first rotating members and a second rotating member. The rotation of the transmission shaft drives the multiple first rotating members and the second rotating members to engage with each other, thereby realizing the synchronous drawing of multiple groups of silicon cores.
The method realizes the simultaneous drawing of multiple silicon cores, improves production efficiency, reduces production costs, and is easy to realize automation and reduce labor intensity.
Smart Images
Figure CN223445684U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of silicon core production, in particular to a clamping mechanism for silicon core growth and a silicon core growth device. BACKGROUND
[0002] At present, the silicon core of the reduction furnace in the polysilicon industry is usually drawn by a zone melting furnace. The silicon material is melted and drawn into a single crystal rod in a single crystal furnace, and then cut into a square silicon core by a horizontal cutting machine or a vertical cutting machine. The process method for drawing a single silicon core by using a zone melting furnace has the disadvantage of low efficiency. CONTENT OF THE UTILITY MODEL
[0003] The present application provides a clamping mechanism for silicon core growth and a silicon core growth device, which can draw multiple silicon cores at a time, greatly improving the efficiency.
[0004] The present application is implemented as follows:
[0005] In a first aspect, the present application provides a clamping mechanism for silicon core growth, which is used to be installed on the upper part of a single crystal growth furnace, and comprises:
[0006] a support base;
[0007] a transmission shaft rotatably supported on the support base;
[0008] a driving member in transmission connection with the transmission shaft for driving the transmission shaft to rotate;
[0009] a plurality of first rotating members coaxially connected with the transmission shaft, the first rotating members having external teeth on their outer periphery, and the external teeth of the plurality of first rotating members being arranged in a staggered manner in the radial direction of the transmission shaft;
[0010] a plurality of groups of second rotating members, each first rotating member being provided with a group of second rotating members, each group of second rotating members being provided with a plurality of second rotating members, the second rotating members having external teeth on their outer periphery, and the second rotating members being rotatably supported on the support base and being capable of meshing with the first rotating members; and
[0011] a seed crystal chuck, each second rotating member being connected with the seed crystal chuck, the seed crystal chuck being used to clamp a silicon core seed crystal.
[0012] In a possible implementation, the outer diameters of the plurality of first rotating members gradually decrease from top to bottom along the height direction of the transmission shaft.
[0013] In a possible implementation, the difference between the outer diameters of two first rotating members arranged adjacently is greater than the outer diameter of the silicon core.
[0014] In a possible implementation, the first rotating member and the second rotating member are gears.
[0015] In a possible implementation, the support base is a box, and the box has an installation cavity inside, and the first rotating member and the second rotating member are arranged in the installation cavity.
[0016] In a possible implementation, the distance between the external teeth of two adjacent second rotating members is 1-10 cm.
[0017] In a second aspect, the embodiments of the present application provide a silicon core growth device, which comprises a single crystal growth furnace, a guide rail, a crucible, a heating assembly and the clamping mechanism for silicon core growth according to the first aspect, the guide rail is used to fix the support base in the single crystal growth furnace, the clamping mechanism is arranged at the upper part of the single crystal growth furnace, the crucible is arranged at the lower part of the single crystal growth furnace, and the heating assembly is used to heat the silicon material in the crucible.
[0018] The embodiments of the present application have at least the following beneficial effects:
[0019] The clamping mechanism for silicon core growth and the silicon core growth device provided by the present application drive the transmission shaft to rotate through the driving member, the transmission shaft drives the plurality of first rotating members to rotate synchronously, the external teeth of the first rotating members mesh with the external teeth of the second rotating members, the first rotating members drive the second rotating members to rotate synchronously, and then drive the seed crystal chuck to rotate together with the silicon core seed crystal, so as to draw the silicon core. Since the plurality of first rotating members are arranged, the external teeth of the plurality of first rotating members are arranged in the radial direction of the transmission shaft, each group of second rotating members is provided with a plurality of second rotating members, so that a plurality of groups of silicon cores can be drawn at the same time, and the efficiency is greatly improved. BRIEF DESCRIPTION OF DRAWINGS
[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.
[0021] Figure 1 FIG. 1 is a schematic diagram of a silicon core growth device according to an embodiment of the present application;
[0022] Figure 2 FIG. 2 is a schematic diagram of a clamping mechanism according to an embodiment of the present application;
[0023] Figure 3 FIG. 3 is a layout diagram of a seed crystal chuck according to an embodiment of the present application.
[0024] Figure 10 - Silicon core growth apparatus; 11 - Clamping mechanism; 111 - Support base; 1111 - Mounting cavity; 112 - Drive shaft; 113 - First rotary member; 114 - Second rotary member; 115 - Seed holder; 116 - Silicon core; 12 - Single crystal growth furnace; 13 - Guide rail; 14 - Crucible; 15 - Heating assembly; 16 - Graphite pot. DETAILED DESCRIPTION
[0025] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.
[0026] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.
[0027] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.
[0028] In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the present application is usually placed, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and the like are only used to distinguish the description and cannot be understood as indicating or implying relative importance.
[0029] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "provided", "mounted", "connected" should be understood broadly, for example, it can be fixedly connected, or detachably connected, or integrally connected; it can be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements. For those of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. EMBODIMENT
[0030] The embodiment provides a clamping mechanism 11 for silicon core 116 growth, referring to Figures 1-2 The clamping mechanism 11 is used for being mounted on the upper portion of a single crystal growth furnace 12, and the clamping mechanism 11 comprises a support base 111, a transmission shaft 112, a driving member, a plurality of first rotating members 113, a plurality of groups of second rotating members 114 and a seed crystal chuck 115.
[0031] The transmission shaft 112 is rotatably supported on the support base 111, the driving member is in transmission connection with the transmission shaft 112, and the driving member is used for driving the transmission shaft 112 to rotate. Exemplarily, the driving member is a driving motor. The plurality of first rotating members 113 are coaxially connected with the transmission shaft 112, the first rotating members 113 have outer teeth on the outer periphery, and the outer teeth of the plurality of first rotating members 113 are arranged in a radial direction of the transmission shaft 112. Exemplarily, the first rotating members 113 are gears. It should be noted that the first rotating members 113 can also be in other forms, for example, the first rotating members 113 can comprise a first circular ring and a first connecting rod connected with the inner wall of the first circular ring and the transmission shaft 112 at two ends, and the outer wall of the first circular ring is provided with the outer teeth.
[0032] Each first rotating member 113 is correspondingly provided with a group of second rotating members 114, each group of second rotating members 114 is provided with a plurality of second rotating members 114, the second rotating members 114 have outer teeth on the outer periphery, and the second rotating members 114 are rotatably supported on the support base 111 and can be engaged with the first rotating members 113; each second rotating member 114 is connected with the seed crystal chuck 115, and the seed crystal chuck 115 is used for clamping a seed crystal of the silicon core 116.
[0033] Exemplarily, along the height direction of the transmission shaft 112, the outer diameters of the plurality of first rotating members 113 are sequentially reduced from top to bottom. The second rotating members 114 are gears, and the gears are rotatably supported on the support base 111 through rotating shafts. Exemplarily, the seed crystal chucks 115 are fixed on the rotating shafts of the second rotating members 114 in a threaded manner. The second rotating members 114 can also be in other forms, for example, the second rotating members 114 comprise a second circular ring and a second connecting rod connected with the second circular ring and the rotating shaft at two ends, and the outer wall of the second circular ring is provided with the outer teeth.
[0034] The clamping mechanism 11 for the growth of the silicon core 116 of the present application drives the transmission shaft 112 to rotate through the driving member, the transmission shaft 112 drives the plurality of first rotating members 113 to rotate synchronously, the outer teeth of the first rotating members 113 are engaged with the outer teeth of the second rotating members 114, the first rotating members 113 drive the second rotating members 114 to rotate synchronously relative to the support base, and further drive the seed crystal chuck 115 to rotate together with the seed crystal of the silicon core 116, so as to draw the silicon core 116. The outer teeth of the second rotating members 114 are not engaged with each other to avoid mutual interference. Since a plurality of first rotating members 113 are arranged, and the outer teeth of the plurality of first rotating members 113 are arranged in the radial direction of the transmission shaft 112, and each group of second rotating members 114 is provided with a plurality of second rotating members 114, the seed crystal chuck 115 and the silicon core 116 are arranged staggeredly (see Figure 2 and Figure 3 ), so that a plurality of groups of silicon cores 116 can be drawn at the same time, greatly improving the efficiency. For example, the first circle (outer circle) can hold 28 silicon core 116 seed crystals, and the second circle (inner circle) can hold 27 silicon core 116 seed crystals. It can be understood that the number of first rotating members 113 and second rotating members 114 can be adjusted according to the size of the single crystal growth furnace 12. The clamping mechanism 11 for the growth of the silicon core 116 of the present application can improve the production rate by several times compared with the traditional method, which is beneficial to the improvement of the production rate and the reduction of energy consumption of the enterprise. The rotation speed of the transmission shaft 112 can be adjusted to help improve the cylindricality of the silicon core 116 and unify the diameter.
[0035] For example, the difference between the outer diameters of two first rotating members 113 arranged adjacent to each other is greater than the outer diameter of the silicon core 116. Since the outer teeth of the plurality of first rotating members 113 are arranged staggeredly in the radial direction of the transmission shaft 112, the silicon core 116 is arranged staggeredly circle by circle, and the difference between the outer diameters of two first rotating members 113 arranged adjacent to each other is greater than the outer diameter of the silicon core 116, so that there is a certain distance between every two adjacent circles of silicon cores 116, and it is not easy for the silicon cores 116 to touch each other during rotation in the drawing process.
[0036] In addition, the distance between the outer teeth of two adjacent second rotating members 114 is 1-10 cm. Since the seed crystal chuck 115 is connected with the second rotating members 114, and the seed crystal chuck 115 is used to hold the seed crystal of the silicon core 116, the distance between the outer teeth of two adjacent second rotating members 114 is set to 1-10 cm, which can better avoid the two adjacent silicon cores 116 from touching each other during rotation. Alternatively, the distance between the outer teeth of two adjacent second rotating members 114 is any one of 1 cm, 2 cm, 3 cm, 4 cm, 5 cm, 6 cm, 7 cm, 8 cm, 9 cm and 10 cm, or a value between any two of them.
[0037] Further, the support base 111 is a box body, and the box body has an installation cavity 1111 in the interior, and the first rotating member 113 and the second rotating member 114 are arranged in the installation cavity 1111. Arranging the first rotating member 113 and the second rotating member 114 in the installation cavity can reduce the pollution of the first rotating member 113 and the second rotating member 114 by other materials in the single crystal growth furnace 12, and improve the service life.
[0038] The embodiment also provides a silicon core growth device 10, which comprises a single crystal growth furnace 12, a guide rail 13, a crucible 14, a heating assembly 15 and the clamping mechanism 11 for silicon core 116 growth of the first aspect, which are arranged in the single crystal growth furnace 12, the guide rail 13 is used for fixing the support base 111 in the single crystal growth furnace 12, the clamping mechanism 11 is arranged at the upper part of the single crystal growth furnace 12, the crucible 14 is arranged at the lower part of the single crystal growth furnace 12, and the heating assembly 15 is used for heating the silicon material in the crucible 14.
[0039] The silicon core growth device 10 of the embodiment of the application can fix the support base 111 in the single crystal growth furnace 12 through the guide rail 13, heat the silicon material (powder material) in the crucible 14 through the heating assembly 15, drive the transmission shaft 112 to rotate, then drive the first rotating member 113 to rotate, drive the second rotating member 114 to rotate through the rotation of the first rotating member 113, and drive the seed crystal chuck 115 to rotate together with the seed crystal of the silicon core 116 through the rotation of the second rotating member 114, so that the silicon core 116 is drawn, a plurality of silicon cores 116 are drawn at one time, the production cost is greatly reduced, the powder material is changed from waste to treasure, and the automatic production is easy to realize and the labor intensity of personnel is reduced.
[0040] The above only provides the preferred embodiment of the application and is not used for limiting the application. For those skilled in the art, the application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the application should be included in the protection scope of the application.
Claims
1. A clamping mechanism for silicon core growth, the clamping mechanism being installed on the upper part of a single crystal growth furnace, characterized in that: It includes: Supporting matrix; a transmission shaft rotatably supported on the support base; a driving member, the driving member being in driving connection with the transmission shaft and being used for driving the transmission shaft to rotate; a plurality of first rotating members, each of which is coaxially connected to the transmission shaft, the first rotating members having external teeth on their outer circumferences, and the external teeth of the plurality of first rotating members being staggered in the radial direction of the transmission shaft; a plurality of groups of second rotating members, each of the first rotating members correspondingly provided with a group of second rotating members, each group of second rotating members including a plurality of second rotating members, the outer periphery of the second rotating members having external teeth, and the second rotating members being rotatably supported on the support base and capable of meshing with the first rotating members; as well as A seed crystal chuck, each of the second rotating members is connected to the seed crystal chuck, and the seed crystal chuck is used to clamp the silicon core seed crystal.
2. The clamping mechanism for silicon core growth according to claim 1, characterized in that: From top to bottom along the height direction of the transmission shaft, the outer diameters of the plurality of first rotating members decrease in sequence.
3. The clamping mechanism for silicon core growth according to claim 2, characterized in that: The difference between the outer diameters of two adjacent first rotating members is greater than the outer diameter of the silicon core.
4. The clamping mechanism for silicon core growth according to claim 3, characterized in that: The difference between the outer diameters of two adjacent first rotating members is 1.2 to 2 times the outer diameter of the silicon core.
5. The clamping mechanism for silicon core growth according to any one of claims 1 to 4, characterized in that: The first rotating member and the second rotating member are both gears.
6. The clamping mechanism for silicon core growth according to any one of claims 1 to 4, characterized in that: The supporting base is a box body, the interior of the box body has an installation cavity, and the first rotating member and the second rotating member are both arranged in the installation cavity.
7. The clamping mechanism for silicon core growth according to any one of claims 1 to 4, characterized in that: The distance between the outer teeth of two adjacent second rotating members is 1-10 cm.
8. A silicon core growth device, characterized in that: It includes: A single crystal growth furnace and a guide rail, a crucible, a heating assembly arranged in the single crystal growth furnace, and a clamping mechanism for silicon core growth as described in any one of claims 1 to 7, wherein the guide rail is used to fix the supporting substrate in the single crystal growth furnace, the clamping mechanism is arranged at the upper part of the single crystal growth furnace, the crucible is arranged at the lower part of the single crystal growth furnace, and the heating assembly is used to heat the silicon material in the crucible.