Nano-silicon crystal insulation board with built-in single-layer steel wire mesh
By incorporating multi-bend steel wire mesh, adhesive insulation layer, and pre-embedded anchors into the nano-silicon crystal insulation board, the problem of insufficient bending load and flexural strength of single-layer steel wire mesh nano-silicon crystal insulation board is solved, thereby improving the overall performance and safety of the insulation board.
Patent Information
- Application Number
- CN202422990985.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-12-04
AI Technical Summary
The existing single-layer steel wire mesh nano-silicon crystal insulation board has low bending load, flexural strength and bonding strength, resulting in poor safety performance.
By setting adhesive insulation layers on both the upper and lower sides of the low thermal conductivity insulation layer, using multi-bend galvanized steel wire mesh, and setting multiple mortar components on the lower adhesive insulation layer, combined with pre-embedded anchors and inverted T-shaped anchoring parts, the bending load and flexural strength are improved.
The bending load, flexural strength and bonding strength of the nano-silicon crystal insulation board are improved, ensuring the insulation performance, and the safety performance is improved by pre-embedded anchors and inverted T-shaped anchor parts.
Smart Images
Figure CN223446410U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to building thermal insulation technical field relates to a built-in single layer steel wire net's nanometer silicon crystal heat preservation board. BACKGROUND
[0002] Nanometer silicon crystal heat preservation board is a removable thermal insulation formwork formed by built-in steel wire net in thermosetting composite polystyrene foam heat preservation board, which is a light weight board with integrated thermal insulation and formwork function, made of nanometer ultra-light silicon inorganic cementitious material, polystyrene aggregate and small molecule water, and built-in galvanized steel wire net for reinforcement, and then cured, edged and processed.
[0003] Nanometer silicon crystal heat preservation board is currently mainly used for cast-in-place concrete external wall thermal insulation and structure integration system, and the internal steel wire net is single layer steel wire net and double layer steel wire net. The single layer steel wire net nanometer silicon crystal heat preservation board has lower bending load resistance, bending strength and double layer steel wire net nanometer silicon crystal heat preservation board, and is mainly used for large mold built-in cast-in-place concrete thermal insulation system, that is, the nanometer silicon crystal heat preservation board with special anchor is placed inside the external formwork, and the concrete is poured and formed to be integrated with the heat preservation board. Although the concrete pouring forms a good external wall, the external formwork needs to be installed during use, and the external formwork needs to be removed after pouring, which increases the construction cost.
[0004] In addition, in order to ensure the thermal insulation effect of nanometer silicon crystal heat preservation board, the heat preservation board usually adopts 050 grade heat preservation board material (thermal conductivity ≤0.05 W / (m·K)) in JG / T536-2017 standard of thermosetting composite polystyrene foam heat preservation board during preparation. The thermal insulation performance of 050 grade heat preservation board is better than that of 060 grade heat preservation board, but the bonding performance, bending load resistance, bending strength and compressive strength are all worse than those of 060 grade heat preservation board, which leads to general bonding strength between nanometer silicon crystal heat preservation board and cast-in-place concrete external wall, and affects the safety performance of nanometer silicon crystal heat preservation board. SUMMARY
[0005] The utility model discloses a built-in single layer steel wire net nanometer silicon crystal heat preservation board to overcome the defects of low bending load resistance, bending strength and bonding strength of the existing single layer steel wire net nanometer silicon crystal heat preservation board.
[0006] The utility model is realized as follows:
[0007] The utility model relates to a kind of built-in single-layer steel wire net nanosilicon crystal insulation board, it is characterized in that, including low thermal conductivity type insulation layer and bonding type insulation layer, the low thermal conductivity type insulation layer is built-in single-layer steel wire net, the bonding type insulation layer includes the upper bonding type insulation layer and the lower bonding type insulation layer respectively arranged in the upper and lower sides of low thermal conductivity type insulation layer, the thermal conductivity coefficient of the low thermal conductivity type insulation layer is less than bonding type insulation layer, the tensile strength, compressive strength and density of the bonding type insulation layer perpendicular to board surface are all greater than low thermal conductivity type insulation layer, the low thermal conductivity type insulation layer and two bonding type insulation layers are integrally molded.
[0008] The low thermal conductivity type insulation layer uses 050-grade thermosetting composite polystyrene board, and the bonding type insulation layer uses 060-grade thermosetting composite polystyrene board.
[0009] The steel wire net uses multi-bending galvanized steel wire net.
[0010] The lower bonding type insulation layer is provided with a plurality of grooves, and the grooves are filled with mortar parts.
[0011] The bonding type insulation layer includes an inner bonding type insulation layer arranged in the low thermal conductivity type insulation layer, and the steel wire net is arranged in the inner bonding type insulation layer.
[0012] The nanosilicon crystal insulation board is provided with a plurality of embedded anchor pieces, the embedded anchor piece includes a tail disc and a connecting part provided with a threaded hole at the lower part, and the lower surface of the connecting part is flush with the lower surface of the nanosilicon crystal insulation board.
[0013] The tail disc is located in the upper bonding type insulation layer, and the upper surface of the tail disc is flush with the upper surface of the upper bonding type insulation layer.
[0014] Alternatively, the tail disc protrudes from the upper bonding type insulation layer, and the lower surface of the tail disc is flush with the upper surface of the upper bonding type insulation layer.
[0015] The embedded anchor piece is made of nylon or plastic material, and a metal flat head screw is embedded in the embedded anchor piece, the metal flat head screw includes a metal tail disc arranged in the tail disc and a metal threaded part.
[0016] The nanosilicon crystal insulation board further includes an anchoring part, the anchoring part includes a threaded part matched with the threaded hole of the embedded anchor piece and an inverted T-shaped part located at the lower side of the nanosilicon crystal insulation board, and the threaded part is threadedly connected with the threaded hole.
[0017] The thickness of the bonding type insulation layer is 5-10 mm.
[0018] The utility model has the following beneficial effects:
[0019] (1) The sandwich structure of the silica crystal insulation board is formed by setting the bonding type insulation layer integrally molded on the lower and upper sides of the low thermal conductivity type insulation layer, the bending load resistance, the breaking strength and the bonding strength of the silica crystal insulation board are improved by the high tensile strength and the high compressive strength of the two bonding type insulation layers, and the silica crystal insulation board has good thermal insulation performance by the low thermal conductivity of the low thermal conductivity type insulation layer.
[0020] (2) The bending load resistance and the breaking strength of the silica crystal insulation board are further improved by using the multi-bending galvanized steel wire mesh and setting multiple mortar components on the lower bonding type insulation layer.
[0021] (3) The anchoring force of the silica crystal insulation board is greatly improved by the characteristics of the inverted T-shaped part firmly embedded in the outer wall after the pouring of the concrete outer wall, and the safety performance is improved by dividing the anchoring part for the silica crystal insulation board into the pre-embedded anchoring part provided on the silica crystal insulation board and the anchoring part with the inverted T-shaped part installed during the construction of the silica crystal insulation board. BRIEF DESCRIPTION OF DRAWINGS
[0022] Figure 1 It is a sectional view structure schematic diagram of the silica crystal insulation board of the first embodiment;
[0023] Figure 2 It is a sectional view structure schematic diagram of the silica crystal insulation board of the second embodiment;
[0024] Figure 3 It is a sectional view structure schematic diagram of the silica crystal insulation board of the third embodiment;
[0025] Figure 4 It is a sectional view structure schematic diagram of the silica crystal insulation board of the fourth embodiment;
[0026] Figure 5 It is Figure 4 It is an enlarged view of the local part A;
[0027] Figure 6 It is a partial structure sectional view schematic diagram of the silica crystal insulation board of the fifth embodiment;
[0028] Figure 7 It is a sectional view structure schematic diagram of the silica crystal insulation board of the fifth embodiment;
[0029] Figure 8 It is a sectional view structure schematic diagram of the pre-embedded anchoring part of the fifth embodiment;
[0030] Figure 9 It is a structure schematic diagram of the metal flat head screw of the fifth embodiment;
[0031] Figure 10 It is a structure schematic diagram of the anchoring part of the fifth embodiment;
[0032] Figure 11This is a schematic cross-sectional view of part of the structure of the nanosilicon crystal insulation board of Example 6.
[0033] Explanation of the accompanying drawings: 100, low thermal conductivity insulation layer; 210, upper bonding insulation layer; 220, lower bonding insulation layer; 230, inner bonding insulation layer; 300, wire mesh; 400, mortar component; 500, embedded anchor; 510, tail plate; 520, connecting part; 521, threaded hole; 530, metal flat head screw; 531, metal tail plate; 532, metal threaded part; 600, anchoring part; 610, inverted T-shaped part; 620, threaded part. DETAILED DESCRIPTION
[0034] The following is a further detailed description of the specific implementation of the present invention in conjunction with the accompanying drawings to make the technical solution of the present invention easier to understand and grasp. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.
[0035] Example 1
[0036] This embodiment provides a nano-silicon crystal insulation board, such as Figure 1 As shown, it includes a low-thermal-conductivity insulation layer 100 and a bonding insulation layer. The low-thermal-conductivity insulation layer 100 has a built-in single-layer steel mesh 300. The bonding insulation layer includes an upper bonding insulation layer 210 and a lower bonding insulation layer 220, respectively arranged on the upper and lower sides of the low-thermal-conductivity insulation layer 100. The thermal conductivity of the low-thermal-conductivity insulation layer 100 is lower than that of the bonding insulation layer. The tensile strength, compressive strength, and density of the bonding insulation layer perpendicular to the board surface are all greater than those of the low-thermal-conductivity insulation layer 100. The low-thermal-conductivity insulation layer 100 and the two bonding insulation layers are integrally molded. The thickness of the bonding insulation layer is 5-10 mm. The steel mesh 300 is galvanized steel mesh 300.
[0037] The low-thermal-conductivity insulation layer 100 and the adhesive insulation layer can both adopt the thermosetting composite polystyrene foam insulation board, and the main component materials thereof are basically the same, that is, the same inorganic cementitious material and polystyrene particle aggregate are adopted, and the difference lies in that the composition proportions of the inorganic cementitious material in the low-thermal-conductivity insulation layer 100 and the adhesive insulation layer are different, and the composition proportion of the inorganic cementitious material in the low-thermal-conductivity insulation layer 100 is smaller than that in the adhesive insulation layer. For example, the low-thermal-conductivity insulation layer 100 adopts the 050-grade thermosetting composite polystyrene board in the standard JG / T536-2017, and the adhesive insulation layer adopts the 060-grade thermosetting composite polystyrene board in the standard. The 050-grade thermosetting composite polystyrene board is provided with the 060-grade thermosetting composite polystyrene board integrally molded on the upper and lower sides to form a sandwich structure insulation board, and the high tensile strength and high compressive strength of the 060-grade thermosetting composite polystyrene board not only greatly improve the bending load and the bending strength of the sandwich structure insulation board, but also make the adhesive properties of the two sides of the sandwich structure insulation board and the cast-in-place concrete outer wall and the plaster layer better.
[0038] Embodiment Two
[0039] The difference between this embodiment and embodiment one lies in the steel wire mesh 300. Specifically, the steel wire mesh 300 in embodiment one adopts a flat steel wire mesh 300. As shown in Figure 2 , the steel wire mesh 300 in this embodiment adopts a multi-curved galvanized steel wire mesh 300. In this way, the bending performance and the bending strength of the silica crystal-containing insulation board can be improved.
[0040] The other structures of this embodiment are consistent with those of embodiment one.
[0041] Embodiment Three
[0042] This embodiment adds a mortar part 400 on the basis of embodiment one. Specifically, as shown in Figure 3 , a plurality of grooves are arranged on the lower adhesive insulation layer 220, and the mortar part 400 is filled in the grooves. In this way, the bending load and the bending strength of the silica crystal-containing insulation board can be further improved.
[0043] The other structures of this embodiment are consistent with those of embodiment one.
[0044] Embodiment Four
[0045] The steel wire mesh 300 of the first embodiment is directly arranged in the low-thermal-conductivity insulation layer 100. In the nanosilica crystal insulation board, when the steel wire mesh 300 is arranged inside the low-thermal-conductivity insulation layer 100, the surface of the steel wire mesh 300 has poor adhesion with the inorganic cementing material, which can cause the tensile strength of the nanosilica crystal insulation board in the region of the steel wire mesh 300 to be lower than that in other regions, and the tensile strength of the nanosilica crystal insulation board is reduced due to the arrangement of the steel wire mesh 300. In order to prevent the tensile strength of the nanosilica crystal insulation board from being reduced due to the arrangement of the steel wire mesh 300, in the present embodiment, as shown in Figure 4 、 5 the adhesive insulation layer includes an inner adhesive insulation layer 230 arranged in the low-thermal-conductivity insulation layer 100, and the steel wire mesh 300 is arranged in the inner adhesive insulation layer 230. The high tensile strength of the adhesive insulation layer is used to improve the tensile strength of the region of the steel wire mesh 300.
[0046] The other structures of the present embodiment are the same as those of the first embodiment.
[0047] Embodiment Five
[0048] The present embodiment further arranges an anchoring structure on the basis of the first embodiment. Specifically, as shown in Figures 6-10 the nanosilica crystal insulation board is provided with a plurality of embedded anchors 500, and the nanosilica crystal insulation board is provided with holes matching the shapes of the embedded anchors 500, and the embedded anchors 500 are installed in the holes.
[0049] The embedded anchor 500 includes a tail plate 510 and a connecting portion 520 provided with a threaded hole 521 at the lower portion, and the lower surface of the connecting portion 520 is flush with the lower surface of the nanosilica crystal insulation board. The embedded anchor 500 can be made of nylon or plastic material, and preferably has a metal flat head screw 530 embedded therein, and the metal flat head screw 530 includes a metal tail plate 531 arranged in the tail plate 510 and a metal threaded portion 532, and the metal flat head screw 530 is used to improve the connection performance of the tail plate 510 and the connecting portion 520 of the embedded anchor 500.
[0050] As shown in Figure 6 、 7 the tail plate 510 is arranged in the upper adhesive insulation layer 210, and the upper surface of the tail plate 510 is flush with the upper surface of the upper adhesive insulation layer 210, which can reduce the thickness of the plaster on the outer side of the nanosilica crystal insulation board in the later stage.
[0051] In order to improve the anchoring force of the bonding type thermal insulation layer on the cast-in-place concrete outer wall, the silica crystal thermal insulation board further comprises an anchoring part 600, the anchoring part 600 comprises a threaded part 620 matched with the threaded hole 521 of the embedded anchor 500 and a reverse T-shaped part 610 located at the lower side of the silica crystal thermal insulation board, and the threaded part 620 is threadedly connected with the threaded hole 521. Wherein, the embedded anchor 500 can be installed in the silica crystal thermal insulation board in advance in the factory, and the anchoring part 600 is installed on site. Since the reverse T-shaped part 610 of the anchoring part 600 is arranged in the cast-in-place concrete outer wall, and the threaded part 620 of the anchoring part 600 is firmly connected with the threaded hole 521 of the embedded anchor 500, the silica crystal thermal insulation board can be firmly anchored in the concrete outer wall by using the shape of the reverse T-shaped part 610 with the inner part being larger than the outer part after the concrete outer wall is poured, thereby effectively improving the safety performance of the thermal insulation board.
[0052] The other structures of the embodiment are consistent with those of Embodiment One.
[0053] Embodiment Six
[0054] The difference between the embodiment and Embodiment Five is the position of the embedded anchor 500. Specifically, as shown in Figure 11 the tail plate 510 of the embedded anchor 500 protrudes from the upper bonding type thermal insulation layer 210, and the lower surface of the tail plate 510 is flush with the upper surface of the upper bonding type thermal insulation layer 210.
[0055] The other structures of the embodiment are consistent with those of Embodiment Five.
Claims
1. A nanosilicon crystal insulation board with a built-in single-layer steel wire mesh, characterized in that: The invention comprises a low thermal conductivity type thermal insulation layer (100) and a bonding type thermal insulation layer, wherein the low thermal conductivity type thermal insulation layer (100) has a built-in single-layer steel wire mesh (300), and the bonding type thermal insulation layer comprises an upper bonding type thermal insulation layer (210) and a lower bonding type thermal insulation layer (220) respectively arranged on the upper and lower sides of the low thermal conductivity type thermal insulation layer (100). The thermal conductivity coefficient of the low thermal conductivity type thermal insulation layer (100) is smaller than that of the bonding type thermal insulation layer, and the tensile strength, compressive strength and density of the bonding type thermal insulation layer perpendicular to the board surface are all greater than those of the low thermal conductivity type thermal insulation layer (100). The low thermal conductivity type thermal insulation layer (100) and the two bonding type thermal insulation layers are integrally molded.
2. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 1, characterized in that: The low thermal conductivity type insulation layer (100) adopts a 050-grade thermosetting composite polystyrene board, and the bonding type insulation layer adopts a 060-grade thermosetting composite polystyrene board.
3. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 1, characterized in that: The steel wire mesh (300) is a multi-bend galvanized steel wire mesh.
4. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 1, characterized in that: The lower bonding type thermal insulation layer (220) is provided with a plurality of grooves, and the grooves are filled with mortar components (400).
5. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 1, characterized in that: The bonding type thermal insulation layer comprises an inner bonding type thermal insulation layer (230) arranged in the low thermal conductivity type thermal insulation layer (100), and the steel wire mesh (300) is arranged in the inner bonding type thermal insulation layer (230).
6. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 1, characterized in that: The nano-silicon crystal insulation board is provided with a plurality of pre-embedded anchors (500), the pre-embedded anchors (500) comprising a tail plate (510) and a connecting portion (520) having a threaded hole (521) at the bottom, the lower surface of the connecting portion (520) being flush with the lower surface of the nano-silicon crystal insulation board.
7. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 6, characterized in that: The tail plate (510) is located in the upper bonding type thermal insulation layer (210), and the upper surface of the tail plate (510) is flush with the upper surface of the upper bonding type thermal insulation layer (210); Alternatively, the tail plate (510) protrudes from the upper bonding type thermal insulation layer (210), and the lower surface of the tail plate (510) is flush with the upper surface of the upper bonding type thermal insulation layer (210).
8. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 6, characterized in that: The embedded anchor (500) is made of nylon or plastic material, and has a metal flat head screw (530) embedded therein. The metal flat head screw (530) comprises a metal tail plate (531) and a metal threaded portion (532) arranged in the tail plate (510).
9. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 6, characterized in that: The nano-silicon crystal insulation board further includes an anchoring portion (600), the anchoring portion (600) including a threaded portion (620) matching the threaded hole (521) of the embedded anchor (500) and an inverted T-shaped portion (610) located on the lower side of the nano-silicon crystal insulation board, the threaded portion (620) being threadedly connected to the threaded hole (521).
10. The nanosilicon crystal insulation board with a built-in single-layer steel wire mesh according to claim 1, characterized in that: The thickness of the adhesive thermal insulation layer is 5-10 mm.