Optical device and optical system

Abstract

The embodiment of the utility model relates to an optical device and an optical system. The embodiment of the utility model provides an optical device which comprises a waveguide and an optical modulator. The light modulator includes a phase change material and is in direct contact with an outer surface of the waveguide. The optical device also includes a thermally conductive member. The thermally conductive member is positioned on the light modulator. The optical device further includes a heating member. And the heating part is placed on the heat conduction part and is far away from the optical modulator and the waveguide. Heat generated from the heating member is transferred to the light modulator through the heat conducting member, thereby inducing a phase change of the light modulator.

Description

TECHNICAL FIELD

[0001] Embodiments of the present utility model relate to optical devices with phase change material and optical systems. BACKGROUND

[0002] The growth of the Internet and the rate of network traffic is driving the demand for optical-based data communications. Optical signals can be used for high-speed and secure data transmission between two devices. Many of the optical devices used in optical-based data communication systems can be fabricated in semiconductor devices and can be further integrated as a silicon photonic integrated chip (PIC) for high-speed optical interconnects. Optical modulation is a process of modifying an optical wave according to a high-frequency electrical signal containing information in order to transmit data and information in the form of optical signals through an optical communication channel such as an optical fiber or a waveguide.

[0003] While existing tools for optical modulation have generally been adequate for their intended purposes, they have not been entirely satisfactory in all respects. Therefore, there is a need for improving the efficiency and reliability of optical modulation for data and information transmission. SUMMARY

[0004] According to embodiments of the present utility model, an optical device includes a waveguide, an optical modulator including a phase change material and in direct contact with an outer surface of the waveguide, a heat conducting component placed on the optical modulator, and a heating component placed on the heat conducting component and away from the optical modulator and the waveguide, wherein heat generated from the heating component is transferred to the optical modulator through the heat conducting component, thereby inducing a phase change of the optical modulator.

[0005] According to embodiments of the present utility model, a method of manufacturing an optical device includes forming a waveguide, forming a phase change material layer on an outer surface of the waveguide, forming a heat conducting material layer on the phase change material layer, and forming a heating component on the heat conducting material layer, wherein the heating component is positioned higher than the outer surface of the waveguide on which the phase change material layer is formed.

[0006] According to embodiments of the present utility model, an optical system includes a photon generator configured to generate an optical signal, a photon controller configured to modulate the optical signal from the photon generator and including a waveguide, an optical modulator including a phase change material and in direct contact with an outer surface of the waveguide, a heat conducting component placed on the optical modulator, and a heating component placed on the heat conducting component, wherein heat generated from the heating component is transferred to the optical modulator through the heat conducting component, thereby inducing a phase change of the optical modulator, and a photon detector configured to receive the optical signal from the photon controller. BRIEF DESCRIPTION OF DRAWINGS

[0007] Aspects of the embodiments of the disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It is noted that, in accordance with standard practice, the various structural features are not drawn to scale. In fact, the dimensions of the various features can be arbitrarily increased or decreased for clarity of presentation and discussion.

[0008] Figure 1 is a schematic diagram of an optical device according to one or more embodiments of the disclosure.

[0009] Figures 2A to 2E Various stages in the process of fabricating an optical device according to one or more embodiments of the disclosure are illustrated.

[0010] Figure 3A is a schematic diagram of a heating component according to one or more embodiments of the disclosure.

[0011] Figure 3B is a plot illustrating the temperature distribution of the heating component of Figure 3A during its operation.

[0012] Figure 4A is a schematic diagram of a heating component according to one or more embodiments of the disclosure.

[0013] Figure 4B is a plot illustrating the temperature distribution of the heating component of Figure 4A during its operation.

[0014] Figure 5 Pulse power schemes and transient thermal dynamics for changing the structural phase of a phase change material are illustrated.

[0015] Figure 6 is a plot of the transmissivity versus wavelength of a phase change material in different structural phases.

[0016] Figure 7A is a schematic diagram of an optical device according to one or more embodiments of the disclosure.

[0017] Figure 7B is a schematic diagram of a light control unit according to one or more embodiments of the disclosure.

[0018] Figure 8 is a top view of a portion of an optical device according to one or more embodiments of the disclosure.

[0019] Figures 9A to 9E Various stages in the process of fabricating an optical device according to one or more embodiments of the disclosure are illustrated.

[0020] Figure 10 is a schematic diagram of an optical device according to one or more embodiments of the disclosure.

[0021] Figure 11is a top view of partial elements of an optical device according to one or more embodiments of the present disclosure.

[0022] Figure 12 is a top view of partial elements of an optical device according to one or more embodiments of the present disclosure, wherein the light modulators in lines L11, L12, and L13 and the light modulators in lines L21, L22, and L23 are disposed in different structure phases.

[0023] Figure 13 is a top view of partial elements of an optical device according to one or more embodiments of the present disclosure, wherein the light modulators in lines L11, L12, and L13 and the light modulators in lines L21, L22, and L23 are disposed in different structure phases.

[0024] Figure 14 is a top view of partial elements of an optical device according to one or more embodiments of the present disclosure.

[0025] Figure 15 is a block diagram of an optical system according to one or more embodiments of the present disclosure.

[0026] Figure 16 is a schematic diagram of a photonic controller according to one or more embodiments of the present disclosure.

[0027] Figure 17 is a schematic diagram of partial elements of a photonic controller according to one or more embodiments of the present disclosure.

[0028] Figure 18 is a schematic diagram of an optical system according to one or more embodiments of the present disclosure.

[0029] Figure 19 is a flowchart illustrating a method of manufacturing an optical device according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION

[0030] The following disclosure provides many different embodiments, or examples, for implementing different components of the provided subject matter. Although each of the various embodiments of the present disclosure can comprise an identical arrangement and / or process, a specific example of an element or arrangement can be described in one embodiment without necessarily being included in other embodiments. In some instances, well-known structures and components are shown in block diagram form, rather than in detail, in order to avoid obscuring the present disclosure. As such, specific details of various embodiments of the present disclosure can be omitted in some instances. However, these and other embodiments are further described in conjunction with the appended figures.

[0031] Moreover, spatially relative terms, such as "beneath", "below", "lower", "above", "upper", "on", and the like, can be used herein for ease of description to describe one element or component's or portion's relationship to another element, component, or portion as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. The devices can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0032] As used herein, terms, such as "first", "second", and "third", describe various elements, components, regions, layers, and / or sections but do not limit those elements, components, regions, layers, or sections. The terms are only used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Terms, such as "first", "second", and "third", when used herein do not imply a sequence or order unless clearly indicated by the context.

[0033] As used herein, the terms "about", "substantially", "essentially", and "approximately" are used to describe and account for small variations. When used in connection with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs exactly, as well as instances in which the event or circumstance occurs very close to.

[0034] Optical modulation allows us to control light waves or encode information on a waveguide. Controlling the travel and propagation of light in a waveguide involves manipulating the flow of light through the waveguide structure, whereby data can be stored, processed, and retrieved in photonic devices. Embodiments of the present disclosure provide optical devices comprising phase change materials (PCMs). By indirectly applying thermal energy to the phase change materials, their structure is adjusted in order to manipulate the properties of light traveling in the waveguide, such as frequency or intensity. The indirect heating mechanism advantageously improves the reliability of the phase change materials compared to directly applying heat to the phase change materials, which in turn provides for an extended fatigue life of the optical devices and ensures stable operation.

[0035] Figure 1 is a schematic illustration of an optical device 1 according to one or more embodiments of the present disclosure. According to some embodiments, the optical device 1 comprises a waveguide 10, a cladding 20, an optical modulator 30, a thermally conductive component 40, a heating component 50, and an electrical connection unit 60. It will be appreciated that for clarity of discussion, some structures of the optical device are not illustrated, such as elements for supporting the heating component 50 and the electrical connection unit 60. Moreover, in other embodiments of the optical device 1, the components described below can be replaced or eliminated.

[0036] The waveguide 10 is a structure for guiding the flow of electromagnetic waves in a direction parallel to its axis, confining them to a region within or adjacent to its surface. In Figure 1In the embodiment shown, the waveguide 10 is a silicon photonic rib waveguide and includes a base portion 11 and a rib portion 12. The base portion 11 can be formed on an insulating layer (not shown) made of silicon oxide formed on a silicon substrate (not shown). The rib portion 12 is formed on the base portion 11 and has a top surface 120 defined at a side of the rib portion 12 furthest from the base portion 11.

[0037] The dimensions of the rib portion 12 and the base portion 11 can be determined according to the application of the optical device 1. For example, in cases where the rib portion 12 has a larger cross-sectional area relative to the base portion 11, advantages such as low coupling loss between an optical fiber and the waveguide can be achieved, but light of multiple polarization states can pass through. In some exemplary embodiments, the silicon photonic rib waveguide will be single mode for each polarization in cases where the width of the rib portion 12 is below about 800 nm. However, it will be appreciated that many variations and modifications can be made to the embodiments of the disclosure. Waveguides having different geometries can be used in the optical devices of the disclosure. For example, the waveguides can be non-planar waveguides and have circular or rectangular cross-sections.

[0038] The cladding 20 is configured to reduce optical loss of light propagating through the waveguide 10. In some embodiments, the material of the cladding has a lower refractive index than the waveguide 10, in other words, light travels slower through the waveguide 10 than through the cladding 20. Waves in the cladding 20 decay very rapidly for evanescent waves. In one exemplary embodiment, the waveguide 10 is made of pure silicon dioxide or silicon nitride (Si3N4) with a high refractive index, and the cladding 20 is made of a silicon dioxide-based material with a lower refractive index, such as silicon oxide (Si02). It will be appreciated that, Figure 1 The upper portion of the cladding 20 covering the top surface 120 of the rib portion 12 of the waveguide 10 is not illustrated in the figure. In addition, although not illustrated in the figure, there can be another cladding positioned below the waveguide 10. Figure 1

[0039] The optical modulator 30 is configured to modulate the light beam propagating through the waveguide 10. In some embodiments, the optical modulator 30 includes a phase change material (PCM) layer and is formed directly on an outer surface of the waveguide 10, such as the top surface 120 of the rib portion 12 of the waveguide 10. In some embodiments, the optical modulator 30 is in direct contact with the top surface 120 of the waveguide 10, there being no other material between the bottom surface of the optical modulator 30 and the top surface 120 of the waveguide 10. Phase change materials can switch rapidly and reversibly between an amorphous state and a crystalline state, where the optical and electronic properties of the amorphous and crystalline states are very different. The ability to switch rapidly between the two states with different properties makes these materials suitable for applications in optical modulation. For example, Figure 6 ​It is illustrated how the phase change material on the top of the waveguide is programmed to amorphous and crystalline states and then read out as a change in the transmittance of the waveguide with respect to light having different wavelengths. The transmittance is defined as the ratio between the output and input optical intensities. The phase change material can include Ge2Sb2Te5(GST), Ge2Sb2Se4Te1(GSST), Sb2S3, or Sb2Se3, or the like.

[0040] The heat-conducting component 40 is positioned between the light modulator 30 and the heating component 50 and is configured to transfer heat from the hotter one of the light modulator 30 and the heating component 50 to the cooler one. For example, when the heating component 50 is applied with an electrical pulse, heat is transferred from the heating component 50 to the light modulator 30 through the heat-conducting component 40. After the electrical pulse is stopped to be applied to the heating component 50, the temperature of the heating component 50 will dissipate rapidly, and thus heat is transferred from the light modulator 30 to the heating component 50 through the heat-conducting component 40. The heat-conducting component 40 can have high thermal conductivity and be electrically insulating to prevent the transfer of electrical current to the light modulator 30 in order to improve the reliability of the light modulator 30. In an exemplary embodiment, the light modulator 30 includes silicon nitride, aluminum nitride, diamond, sapphire, or the like.

[0041] In some embodiments, as shown in Figure 1 The light modulator 30 extends across the top surface 120 of the waveguide 10 (i.e., the bottom surface of the light modulator 30 passes through both side walls 121 and 122 of the ribbed portion 12 and partially covers the cladding 20), and the heat-conducting component 40 has the same area as the light modulator 30, in some other embodiments, the light modulator 30 does not extend across the top surface 120 of the waveguide 10. The width of the light modulator 30 in the lateral direction (X-axis direction) is less than the width of the top surface 120 of the waveguide 10 in the same direction.

[0042] The heating component 50 is configured to generate heat in response to the application of an electrical pulse provided by the electrical connection unit 60. It will be appreciated that the electrical connection unit 60 can be configured to apply an electrical pulse to the heating component 50 in response to a control signal provided by the control unit 80. Figure 3A and Figure 4AThe configuration of the heating component 50 is described in detail in the related embodiments. The electrical connection unit 60 includes a first metal pad 61, a second metal pad 62, and a plurality of contacts 63 and 64. A first set of one or more contacts 63 extends downward from the first metal pad 61 to the electrical contact section 51 of the heating component 50 (e.g., to the cathode of the heating component 50) to couple the first metal pad 61 to the heating component 50. A second set of one or more contacts 64 extends downward from the second metal pad 62 to the electrical contact section 52 of the heating component 50 (e.g., to the anode of the heating component 50) to couple the second metal pad 62 to the heating component 50. It will be appreciated that the number and arrangement of the metal pads and contacts of the electrical connection unit 60 should not be limited to Figure 1 The embodiments shown in the figures, and can vary according to different needs. For example, the contacts 63 and / or the contacts 64 can be arranged on the heating component 50 along a line parallel to the longitudinal direction (Y-axis direction) of the waveguide 10.

[0043] Figures 2A to 2E Various stages in a process of fabricating an optical device according to one or more embodiments of the present disclosure are described. While the method is described as a series of acts, it will be understood that the acts (and / or the portions thereof) can be rearranged in other embodiments. Moreover, while the method is described as a series of acts or events, not all of the acts or events need necessarily occur. Indeed, some of the acts or events can be omitted in some embodiments. In addition, the method is described as a series of acts or events, but not all of the described acts or events need necessarily occur in this order. Indeed, some of the acts or events can be rearranged in other embodiments. Figures 2A to 2E A series of specific acts is described, but in other embodiments, some of the acts described and / or depicted can be omitted. Moreover, Figures 2A to 2E Additional acts not described and / or depicted in the figures can be included in other embodiments.

[0044] In some embodiments, as Figure 2A As shown in the figures, the method of fabricating the optical device 1 includes forming the waveguide 10 and the cladding layer 20. The cladding layer 20 can be formed on the waveguide 10 by deposition. The deposition can be performed, for example, by atomic layer deposition (ALD), vapor deposition, or some other suitable deposition process. In some embodiments, the cladding layer 20 is a silicon dioxide-based material, such as silicon oxide (SiO2). Optionally, a chemical mechanical planarization (CMP) operation is performed to planarize the upper surface of the cladding layer 20 with the top surface 120 of the waveguide 10.

[0045] After forming the cladding layer 20, as Figure 2B As shown in the figures, the method of fabricating the optical device 1 also includes forming (e.g., depositing) a phase-change material layer 31 on the top surface 120 of the waveguide 10, and forming a thermally conductive material layer 41 on the phase-change material layer 31. The deposition can be performed, for example, by atomic layer deposition (ALD), vapor deposition, or some other suitable deposition process.

[0046] After forming the phase-change material layer 31 and the thermally conductive material layer 41, as Figure 2CAs shown in FIG. 1, the method of manufacturing the optical device 1 further includes patterning the phase-change material layer 31 and the thermally conductive material layer 41 by a photolithography / etching process, so as to form the light modulator 30 and the thermally conductive component 40. In some embodiments, since the light modulator 30 and the thermally conductive component 40 are patterned by the same process, the sidewalls of the light modulator 30 are flush with the sidewalls of the thermally conductive component 40.

[0047] After forming the light modulator 30 and the thermally conductive component 40, as shown in FIG. 1, the method of manufacturing the optical device 1 further includes forming another cladding layer 25 on the top surface 120 of the waveguide 10. The cladding layer 25 laterally surrounds the light modulator 30 and the thermally conductive component 40, and covers the top surface 120 of the waveguide 10 exposed by the light modulator 30. Optionally, a CMP operation is performed to planarize the upper surface of the cladding layer 25 and the upper surface of the thermally conductive component 40. The cladding layer 25 and the cladding layer 20 can be made of the same material. Figure 2D After forming the cladding layer 25, as shown in FIG. 1, the method of manufacturing the optical device 1 further includes forming a heating component 50 on the top surface 400 of the thermally conductive component 40. The heating component 50 has high thermal conductivity, for example, between about 100 W / (m-K) to about 400 W / (m-K), such that the heating component 50 serves as a heat sink for the thermally conductive component 40. In the illustrated embodiment, the heating component 50 is a copper foil, but other metal foils including suitable materials (e.g., gold, tungsten, aluminum, silver, or the like, or combinations thereof) can also be used. The thickness of the metal foil is between about 10 μιη to about 50 μιη, for example, 30 μιη, but other dimensions are also possible. The heating component 50 can be formed (e.g., deposited) by physical vapor deposition (PVD), chemical vapor deposition (CVD), or the like. In some embodiments, the heating component 50 extends in a plane parallel to the top surface 120 of the waveguide 10 and away from the light modulator 30. That is, the heating component 50 and the light modulator 30 are positioned at different levels, and heat transferred between the heating component 50 and the light modulator 30 is transmitted in a Z-axis direction perpendicular to the top surface of the waveguide 10.

[0048] Figure 2E In some embodiments, as shown in FIG. 1, the method of manufacturing the optical device 1 further includes forming a dielectric layer 60 on the top surface 400 of the thermally conductive component 40. The dielectric layer 60 has a dielectric constant of about 2.2 to about 3.9, for example, about 3. The dielectric layer 60 can be formed by a spin-on process, a PVD process, a CVD process, or the like. In some embodiments, the dielectric layer 60 is formed on the top surface 400 of the thermally conductive component 40 before the heating component 50 is formed. In other embodiments, the dielectric layer 60 is formed on the top surface 400 of the thermally conductive component 40 after the heating component 50 is formed.

[0049] In some embodiments, as shown in FIG. 1, the method of manufacturing the optical device 1 further includes forming a dielectric layer 60 on the top surface 400 of the thermally conductive component 40. The dielectric layer 60 has a dielectric constant of about 2.2 to about 3.9, for example, about 3. The dielectric layer 60 can be formed by a spin-on process, a PVD process, a CVD process, or the like. In some embodiments, the dielectric layer 60 is formed on the top surface 400 of the thermally conductive component 40 before the heating component 50 is formed. In other embodiments, the dielectric layer 60 is formed on the top surface 400 of the thermally conductive component 40 after the heating component 50 is formed. Figure 3A ​In the illustration, the heating component 50 includes two electrical contact sections 51 and 52 and an intermediate section 53. The two electrical contact sections 51 and 52 are located at two ends 510 and 520 of the heating component 50 and are arranged along a longitudinal axis LH. The intermediate section 53 connects the two electrical contact sections 51 and 52 and is in contact with the thermally conductive component 40. In some embodiments, in a transverse direction perpendicular to the longitudinal axis LH of the heating component 50, the width of the intermediate section 53 is smaller than the width of the two electrical contact sections 51 and 52, such that the intermediate section 53 has a higher current density than the two electrical contact sections 51 and 52 when an electrical pulse is applied to the heating component 50. Higher current density represents higher temperature. Thus, as shown in the illustration, the heating component 50 has the highest temperature in the central region (i.e., the region where the thermally conductive component 40 is connected) and the temperature gradually decreases towards the ends (i.e., the two electrical contact sections 51 and 52). Figure 3B In the illustration, the heating component 50 has the highest temperature in the central region (i.e., the region where the thermally conductive component 40 is connected) and the temperature gradually decreases towards the ends (i.e., the two electrical contact sections 51 and 52).

[0050] Figure 4A is a schematic illustration of a heating component 50a according to one or more embodiments of the present disclosure. In an alternative embodiment, the heating component 50a includes two electrical contact sections 51a and 52a and an intermediate section 53a. The two electrical contact sections 51a and 52a are located at two ends 510a and 520a of the heating component 50 and are arranged along a longitudinal axis LH. The intermediate section 53a connects the two electrical contact sections 51a and 52a and is in contact with the thermally conductive component 40. In some embodiments, the width of the intermediate section 53a varies in a transverse direction perpendicular to the longitudinal axis LH. In particular, as shown in the illustration, the intermediate section 53a includes a middle contact portion 531a and two intermediate portions 532a and 533a. The middle contact portion 531a is in contact with the thermally conductive component 40, and the two intermediate portions 532a and 533a each connect one end of the middle contact portion 531a to the electrical contact sections 51a and 52a. The width W2 of the two intermediate portions 532a and 533a is greater than the width W3 of the middle contact portion 531a in the transverse direction. In addition, the width W1 of the electrical contact sections 51a and 52a is greater than the width W2 of the two intermediate portions 532a and 533a. Figure 4A In the illustration, the heating component 50 has the highest temperature in the central region (i.e., the region where the thermally conductive component 40 is connected) and the temperature gradually decreases towards the ends (i.e., the two electrical contact sections 51 and 52).

[0051] Reference is made to Figure 3A and Figure 4AIn comparison to the inner ends 511 and 521 of the electrical contact sections 51 and 52, the inner ends 511a and 521a of the electrical contact sections 51a and 52a are positioned further away from the heat conducting member 40, which means that the electrical contact sections 51 and 52 have a larger area than the electrical contact sections 51a and 52a. Therefore, the heat dissipation rate at the two end regions of the intermediate section 53 is higher than the heat dissipation rate of the end regions of the intermediate section 53a. Thus, the temperature is more evenly distributed over the intermediate section 53a than over the intermediate section 53. The even temperature distribution over the intermediate section 53a allows for a uniform heating of the heat conducting member 40, thereby achieving a temperature at which a structural phase change of the optical modulator 30 can occur, even when a lower power is applied to the heating member 50a.

[0052] Figure 5 Pulse power schemes and transient heat dynamics for changing the structural phase of a phase change material are described. Due to the properties of the phase change material of the optical modulator 30 exhibiting different optical transmittances in different structural phases, the optical transmittance of the phase change material decreases from 95% in the case of aGST (GST in amorphous state) to 26% in the case of cGST (GST in crystalline state). In the present disclosure, in order to switch the structural state of the phase change material, an electrical pulse is applied to the heating member 50 or 50a Figure 3A and Figure 4A ), and thus heat is generated. The heat from the heating member 50 or 50a is transferred through the heat conducting member 40 to the optical modulator 30, thereby inducing a phase change of the optical modulator 30.

[0053] Generally, as shown in Figure 5 , a short and high amplitude electrical pulse is used to melt quench (i.e., temperature sharply rises above the melting temperature (T2) and quickly dissipates to room temperature) the phase change material to the amorphous state 32. Conversely, a longer and lower amplitude electrical pulse is used to anneal the PCM, where the temperature rises between the melting temperature (T2) and the transition temperature (T1) for a period of time (to recrystallize the atomic lattice) before finally reducing the temperature to room temperature. By virtue of the annealing process, the phase change material changes to the crystalline state 33. For use in photonic memories, in some embodiments, the amorphous state is also referred to as the "reset" state, and the crystalline state is also referred to as the "set" state. The "reset" state corresponds to digital data "1" stored in a memory cell, and the "set" state corresponds to digital data "0" stored in a memory cell. According to experimental results, for GST, the transition temperature T1 is about 620K to about 660K, with a pulse duration of 1 μβ to 100 ns, and T2 is about 900K.

[0054] Figure 7A is a schematic diagram of an optical device lb according to one or more embodiments of the present disclosure. Figure 7A is used in Figure 1components of the same element number refer to the same components or to equivalent components thereof. For the sake of conciseness, the same will not be repeated here. The differences between optical device lb and optical device 1 include that light modulators 30 and heat conducting members 40 are replaced by a plurality of light modulators 71 and a number of heat conducting members 72.

[0055] As shown in Figure 7B , heat conducting members 72 are formed on top of light modulators 71. Light modulators 71 and heat conducting members 72 collectively constitute a light control unit 70. Referring again to Figure 7A , light control units 70 are arranged in an array and are positioned on top surface 120 of ribbed portion 12 of waveguide 10 or on top surface of cladding 20. In particular, light modulators 71 of each light control unit 70 are in direct contact with top surface 120 of ribbed portion 12 of waveguide 10 or with top surface of cladding 20. Heat conducting members 72 of each of light control units 70 are in direct contact with bottom surface of middle section 53 of heating member 50. By virtue of this arrangement, heat generated from heating member 50 is transferred to light modulators 71 through heat conducting members 72, thereby inducing phase change of light modulators 71. Light modulators 71 and heat conducting members 72 can be made of the same materials as light modulators 30 and heat conducting members 40, respectively.

[0056] In some embodiments, as shown in Figure 7B , each of light modulators 71 is a cylinder having a circular cross-section, and heat conducting members 72 on top of light modulators 71 are also cylinders having a circular cross-section. However, it will be appreciated that many variations and modifications can be made to embodiments of the present disclosure. Light modulators 71 and heat conducting members 72 can have different cross-sections. For example, each of light modulators 71 and heat conducting members 72 is a cylinder having a square or hexagonal cross-section.

[0057] Referring to Figure 8 , a number of first reference lines L11, L12 and L13 and a number of second reference lines L21, L22 and L23 are defined on a plane in which top surface 120 of waveguide 10 lies, and each reference line extends perpendicular to longitudinal axis LG of waveguide 10. First reference lines L11, L12 and L13 are spaced apart from each other by a first pitch P1. Second reference lines are spaced apart from each other by a second pitch P2. In the embodiment shown in Figure 8 , first pitch P1 is identical to second pitch P2.

[0058] The first group of light control units 70 is arranged along the first reference lines Ll 1, L12 and L13, and the second group of light control units 70 is arranged along the second reference lines L21, L22 and L23. Thus, the light control units 70 are arranged periodically in a direction parallel to the longitudinal axis LG of the waveguide 10. In this way, electromagnetic waves propagating in the waveguide will change their propagation mode due to resonance. The pitch P1 and P2 can be designed such that light of a certain frequency can resonate in the light modulators 71 of the light control units 70. In some embodiments, the light control units 70 arranged along the first reference lines Ll 1, L12 and L13 are interleaved with the light control units 70 arranged along the second reference lines L21, L22 and L23. By this arrangement, the number of elements per unit area can be increased, thereby improving the accuracy of the light control.

[0059] Figures 9A to 9E Various stages in the process of fabricating an optical device according to one or more embodiments of the disclosure are illustrated. While the method is described as a series of acts, it will be understood that in other embodiments, the order of the acts (and / or the portions of the acts) can be changed. Also, while the method is described as a series of acts, not all of the acts can be required in all embodiments. Figures 9A to 9E A series of specific acts is illustrated, but in other embodiments, some of the illustrated and / or described acts can be omitted. Also, Figures 9A to 9E Additional acts not illustrated and / or described in the specification can be included in other embodiments.

[0060] In some embodiments, as Figure 9A embodiments, the cladding layer 20 is a silicon dioxide based material, such as silicon oxide (Si02). Optionally, a chemical mechanical planarization (CMP) operation is performed to planarize the upper surface of the cladding layer 20 with the top surface 120 of the waveguide 10.

[0061] After forming the cladding layer 20, as Figure 9B embodiments, the method of fabricating the optical device lb further includes forming (e.g., depositing) a layer of phase change material 73 on the top surface 120 of the waveguide 10, and forming a layer of thermally conductive material 74 on the layer of phase change material 73. The deposition can be performed, for example, by atomic layer deposition (ALD), vapor deposition, or some other suitable deposition process.

[0062] After forming the layer of phase change material 73 and the layer of thermally conductive material 74, as Figure 9C, the method for manufacturing the optical device 1b further includes patterning the phase change material layer 73 and the thermal conductive material layer 74 by a photolithography / etching process to form the light control unit 70. In some embodiments, because the light modulator 71 and the thermal conductive component 72 are patterned by the same process, the sidewalls of the light modulator 71 are flush with the sidewalls of the thermal conductive component 72.

[0063] After forming the light modulator 71 and the heat conducting member 72, as shown in FIG. Figure 9D , the method of manufacturing the optical device 1b further includes forming another cladding layer 25 on the top surface 120 of the waveguide 10. The cladding layer 25 laterally surrounds the light modulator 71 and the thermally conductive component 72, and covers the top surface 120 of the waveguide 10 exposed by the light control unit 70. Optionally, a CMP operation is performed to planarize the upper surface of the cladding layer 25 and the upper surface 720 of the thermally conductive component 72. The cladding layer 25 and the cladding layer 20 can be made of the same material.

[0064] After forming the cladding layer 25, as Figure 9E , the method of manufacturing the optical device 1b further includes forming a heating member 50 on the top surface of the thermally conductive member 72. The heating member 50 has a high thermal conductivity, for example, between about 100 watts per meter kelvin (W / (mK)) and about 720 W / (mK), so that the heating member 50 serves as a heat sink for the thermally conductive member 72. In the illustrated embodiment, the heating member 50 is a copper foil, but other metal foils including suitable materials such as gold, tungsten, aluminum, silver, or the like, or a combination thereof, may also be used. The thickness of the metal foil is between about 10 μm and about 50 μm, for example 71 μm, but other sizes are possible. The heating member 50 may be formed (e.g., deposited) by physical vapor deposition (PVD), chemical vapor deposition (CVD), or the like. In some other embodiments, the heating member 50 is replaced by Figure 4A The heating element 50a shown in FIG. The heating element 50a can be formed by the same or similar process.

[0065] In operation, an electric pulse is applied to the heating member 50 or the heating member 50a, and the heat generated by the heating member 50 or the heating member 50a is transferred to the optical modulator 71 through the heat conducting member 72. Figure 5 The control method described in changes the structural phase of the light modulator 71.

[0066] Figure 10 is a schematic diagram of an optical device 1 c according to one or more embodiments of the present disclosure. Figure 10 Used in Figure 7A Components with the same reference numerals as those in FIG. 1 and FIG. 2 refer to the same components or their equivalents. For the sake of brevity, this description will not be repeated here. The difference between the optical device 1c and the optical device 1b includes that the heating element 50 is replaced by two heating elements 90 and 95.

[0067] Two heating components 90 and 95 are used to adjust the temperature of the light control units 70 in different groups. In some embodiments, the heating component 90 includes a connecting portion 91 and a number of finger portions 92. The finger portions 92 extend from one edge of the connecting portion 91 in a direction perpendicular to the longitudinal axis LG of the waveguide 10. Similarly, the heating component 95 includes a connecting portion 96 and a number of finger portions 97. The finger portions 97 extend from one edge of the connecting portion 96 in a direction perpendicular to the longitudinal axis LG of the waveguide 10. The heating components 90 and 95 can be placed on the same level, and their finger portions are arranged in an interleaved manner. That is, at least one of the finger portions 92 of the heating component 90 is positioned in a slot formed by two adjacent finger portions 97 of the heating component 95, and at least one of the finger portions 97 of the heating component 95 is positioned in a slot formed by two adjacent finger portions 92 of the heating component 90.

[0068] The heating components 90 and 95 are configured to generate heat in response to the application of an electric current provided by the electric connection unit 60c. The electric connection unit 60 includes a first metal pad 61c, a second metal pad 62c, and a plurality of contacts 63c and 64c. A first set of one or more contacts 63c extends downward from the first metal pad 61c to the finger portions 97 of the heating component 95 to couple the first metal pad 61c to the heating component 95. A second set of one or more contacts 64c extends downward from the second metal pad 62c to the finger portions 92 of the heating component 90 to couple the second metal pad 62c to the heating component 90.

[0069] Figure 11 is a top view of partial elements of the optical device 1c according to one or more embodiments of the present disclosure. In some embodiments, the finger portions 92 of the heating component 90 are coupled to a first group of the light control units 70 arranged along the first reference lines Ll l, L12, and L13. In addition, the finger portions 97 of the heating component 95 are coupled to a second group of the light control units 70 arranged along the second reference lines L21, L22, and L23.

[0070] In operation, different power voltages (or currents) VI and V2 are alternately applied to the heating component 90 and the heating component 95, and thus the finger portions 92 are heated to a different temperature from the finger portions 97. In some embodiments, the finger portions 92 are heated to a higher temperature than the finger portions 97. In other embodiments, the finger portions 92 are heated to a lower temperature than the finger portions 97. Figure 12In one exemplary embodiment shown in FIG. 1, short and high-amplitude electrical pulses V1 are used to quench the optical modulators 71 arranged along the first reference lines L11, L12, and L13, which causes these optical modulators 71 to transform into amorphous state. At the same time, longer and lower-amplitude electrical pulses V2 are used to anneal the optical modulators 71 arranged along the second reference lines L21, L22, and L23, which causes these optical modulators 71 to transform into crystalline state. Therefore, the light propagating in the waveguide 10 is modulated by the optical modulators 71 arranged along the first reference lines L11, L12, and L13, and is blocked from entering the optical modulators 71 arranged along the second reference lines L21, L22, and L23.

[0071] After the above operation is completed, the electrical pulses applied to the heating components 90 and 95 are exchanged so as to change the structural phase of the optical modulators in different groups. In particular, as shown in FIG. 2, the short and high-amplitude electrical pulses V1 are used to quench the optical modulators 71 arranged along the second reference lines L21, L22, and L23, which causes these optical modulators 71 to transform into amorphous state. At the same time, longer and lower-amplitude electrical pulses V2 are used to anneal the optical modulators 71 arranged along the first reference lines L11, L12, and L13, which causes these optical modulators 71 to transform into crystalline state. Therefore, the light propagating in the waveguide 10 is modulated by the optical modulators 71 arranged along the second reference lines L21, L22, and L23, and is blocked from entering the optical modulators 71 arranged along the first reference lines L11, L12, and L13. Figure 13 In one exemplary embodiment shown in FIG. 1, short and high-amplitude electrical pulses V1 are used to quench the optical modulators 71 arranged along the first reference lines L11, L12, and L13, which causes these optical modulators 71 to transform into amorphous state. At the same time, longer and lower-amplitude electrical pulses V2 are used to anneal the optical modulators 71 arranged along the second reference lines L21, L22, and L23, which causes these optical modulators 71 to transform into crystalline state. Therefore, the light propagating in the waveguide 10 is modulated by the optical modulators 71 arranged along the first reference lines L11, L12, and L13, and is blocked from entering the optical modulators 71 arranged along the second reference lines L21, L22, and L23.

[0072] Figure 14 is a top view of part elements of an optical device according to one or more embodiments of the present disclosure. In some embodiments, a number of first reference lines L11, L12, and L13 and a number of second reference lines L21, L22, and L23 are defined on a plane in which a top surface 120 of the waveguide 10 is located, and each reference line extends perpendicular to a longitudinal axis LG of the waveguide 10. The first reference lines L11, L12, and L13 are spaced apart from each other by a first pitch P3. The second reference lines are spaced apart from each other by a second pitch P4. In some embodiments, the first pitch P3 is different from the second pitch P4. Figure 14 In the embodiment shown in FIG. 1, the first pitch P3 is different from the second pitch P4. A first group of the light control units 70 is arranged along the first reference lines L11, L12, and L13, and a second group of the light control units 70 is arranged along the second reference lines L21, L22, and L23. Due to the different pitches between the light control units 70 in different groups, the light with different wavelengths can be independently controlled.

[0073] For example, to modulate light having a shorter wavelength, the light control units 70 arranged along the first reference lines Ll 1, L12, and L13 are set to an amorphous state, while the light control units 70 arranged along the second reference lines L21, L22, and L23 are set to a crystalline state. Thus, light having a shorter wavelength is modulated by the light control units 70 arranged along the first reference lines Ll 1, L12, and L13, but light having a longer wavelength will pass directly through the array of light control units 70 and be output from the waveguide. Conversely, to modulate light having a longer wavelength, the light control units 70 arranged along the first reference lines Ll 1, L12, and L13 are set to a crystalline state, while the light control units 70 arranged along the second reference lines L21, L22, and L23 are set to an amorphous state. Thus, light having a longer wavelength is modulated by the light control units 70 arranged along the second reference lines L21, L22, and L23, but light having a shorter wavelength will pass directly through the array of light control units 70 and be output from the waveguide.

[0074] Figure 15 A block diagram of an optical system 80 in accordance with one or more embodiments of the disclosure. The optical system 80 is configured to use light waves for data processing, data storage, or data communication for computation. According to some embodiments, the optical system 80 includes one or more photon generators 81, a photon controller 82, and a photon detector 83. The photon generator 81, the photon controller 82, and the photon detector 83 are coupled by an optical fiber 84. The optical communication uses the optical fiber 84 as a transmission medium. The optical fiber can be a multi-mode fiber (MMF), which simplifies the light coupling within the optical fiber but limits the transmission distance, or can be a single-mode fiber (SMF), which allows long-distance transmission for applications such as telecommunication. The optical signals generated from the photon generator 81 are processed by the photon controller 82 and then sent to the photon detector 83 for analysis.

[0075] The photon generator 81 can be any suitable coherent light source. In some embodiments, the photon generator 81 can be a diode laser or a vertical cavity surface emitting laser (VCSEL). In some embodiments, the photon generator 81 is configured to have an output power greater than 10 mW, greater than 25 mW, greater than 50 mW, or greater than 75 mW. In some embodiments, the photon generator 81 is configured to have an output power less than 100 mW. The photon generator 81 can be configured to emit continuous light waves or light pulses (“optical pulses”) of one or more wavelengths. The duration of the optical pulses can be, for example, about 100 ps. Using multiple wavelengths of light allows some embodiments to be task-parallelized, such that multiple computations can be performed simultaneously using the same optical hardware. Some embodiments can use two or more phase-locked light sources having the same wavelength simultaneously to increase the optical power into the optical encoder system.

[0076] The photonic controller 82 is configured to adjust the amplitude or phase of the optical signals generated from the photonic generator 81. Reference will be made to the following Figures 16 to 18 An exemplary embodiment of the photonic controller 82 is described in detail. The photonic detector 83 receives optical pulses from the photonic controller 82. Each of the optical pulses is then converted to an electrical signal. In some embodiments, the intensity and phase of each of the optical pulses is measured by an optical detector within the optical receiver. The electrical signal representing the measurements is then output to a processor (not shown in the figure).

[0077] Figure 16 is a schematic diagram of a photonic controller 82 according to one or more embodiments of the present disclosure. In some embodiments, the photonic controller 82 includes a number of transverse optical lines 841 and a number of longitudinal optical lines 842. The transverse optical lines 841 and the longitudinal optical lines 842 constitute an integrated 3x3 crossbar array chip. A number of optical devices 1 are positioned adjacent to the intersection of the transverse optical lines 841 and the longitudinal optical lines 842. When the optical signals 811, 812, 813, and 814 enter the transverse optical lines 841, a portion of the light is coupled into the waveguides 10 of the optical devices 1 and then coupled into the longitudinal optical lines 842, and the rest of the light is directly output through the transverse optical lines 841. Then, the optical signals 831, 832, and 833 transmitted in the longitudinal optical lines 842 will be output from the photonic controller 82. Different phase states of the optical modulators 30 or 71 attached on the waveguides 10 will affect the coupling coefficients in the waveguides 10 and the coupling regions of the optical lines. By selecting appropriate structural parameters of the optical modulators 30 or 71, the signals propagating in the horizontal direction are selectively coupled and multiplexed in the vertical direction in the optical lines.

[0078] Figure 17 is a schematic diagram of some elements of a photonic controller 82d according to one or more embodiments of the present disclosure. Figure 17 Components in Figure 16 refer to the same components or their equivalents using the same reference numerals. For the sake of brevity, they will not be repeated here. The difference between the photonic controller 82d and the photonic controller 82 includes that the optical devices 1 are replaced by optical devices 1d. In some embodiments, the optical devices 1d are optical ring resonators and include waveguides 10d and optical modulators 30 or 71 attached on the waveguides 10d. The waveguides 10d are closed-loop optical paths and are coupled to the transverse optical lines 841 and the longitudinal optical lines 842. When light with a resonant wavelength passes through the waveguides 10d from the transverse optical lines 841, the light accumulates intensity in multiple round trips due to structural interference and is output to the longitudinal optical lines 842. Since several selected wavelengths will resonate within the waveguides 10d, the optical ring resonators can be used as filters.

[0079] Figure 18is a schematic diagram of an optical system 80e according to one or more embodiments of the present disclosure. The optical system 80e is configured to use light waves for data processing, data storage, or data communication for computation. According to some embodiments, the optical system 80e includes one or more photonic generators 81, a photonic controller 82e, and a photonic detector 83. The photonic controller 82e includes several optical lines, such as optical lines 843 and 844. The waveguide 10 is coupled to the optical line 843, and the optical modulator 30 or 71 is attached to the waveguide 10. In some embodiments, the optical system 80e includes a first evanescent coupler 845 and a second evanescent coupler 846 for mixing two input modes of the photonic controller 82e. The optical modulator 30 modulates the phase Θ in the optical line 843 of the photonic controller 82e to create a phase difference between the two optical lines 843 and 844. Adjusting the phase Θ changes the light intensity output by the photonic controller 82e from one output mode of the photonic controller 82e to another output mode, thereby creating a controllable and variable beam splitter.

[0080] Figure 19 is a flowchart illustrating a method S10 of fabricating an optical device according to one or more embodiments of the present disclosure. In some embodiments, the method S10 includes an operation S11 in which a waveguide, such as the waveguide 10 in Figure 2A is formed. The method S10 also includes an operation S12 in which a layer of a phase change material, such as the phase change material 31 in Figure 2B is formed on an outer surface (e.g., the top surface 120) of the waveguide 10. The method S10 further includes an operation S13 in which a layer of a thermally conductive material, such as the thermally conductive material 41 in Figure 2C is formed on the layer of the phase change material. Additionally, the method S10 includes an operation S14 in which a heating component, such as the heating component 50 in Figure 2E is formed on the layer of the thermally conductive material.

[0081] Embodiments of the present disclosure provide an optical device and a method of fabricating the same. The optical device uses an optical modulator to modulate a property of light passing through a waveguide thereof. The optical modulator is made of a phase change material that exhibits different light transmittance at different temperatures. As the optical modulator is separated from a heating component that generates heat in response to an electrical pulse, the reliability of the optical modulator can be improved. In some embodiments of the present disclosure, the optical modulator is periodically arranged such that light of a frequency corresponding to a pitch of the optical modulator can be precisely modulated. The optical device in different embodiments of the present disclosure is suitable for use in an optical system to meet the ever-evolving demand for low power consumption and high performance devices.

[0082] One embodiment of the disclosure provides an optical device that includes a waveguide and a light modulator. The light modulator includes a phase change material and is in direct contact with an outer surface of the waveguide. The optical device also includes a heat conducting component. The heat conducting component is positioned on the light modulator. The optical device further includes a heating component. The heating component is placed on the heat conducting component and is distanced from the light modulator and the waveguide. Heat generated from the heating component is transferred to the light modulator through the heat conducting component, thereby inducing a phase change of the light modulator.

[0083] Another embodiment of the disclosure provides a method of manufacturing an optical device. The method includes forming a waveguide and forming a layer of a phase change material on an outer surface of the waveguide. The method also includes forming a layer of a heat conducting material on the layer of the phase change material. The method further includes forming a heating component on the layer of the heat conducting material. The heating component is positioned above the outer surface of the waveguide that the layer of the phase change material contacts.

[0084] Yet another embodiment of the disclosure provides an optical system. The optical system includes a photon generator configured to generate a light signal. The optical system also includes a photon controller that includes the optical device mentioned in the above embodiments. The optical system further includes a photon detector configured to receive the light signal from the photon controller.

[0085] The foregoing outlines structures of several embodiments so that those skilled in the art can better understand the aspects of the disclosure. Those skilled in the art should appreciate that they can readily use the disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and / or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the disclosure, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the disclosure.

[0086] Legend

[0087] 1: Optical device

[0088] 1b: Optical device

[0089] 1c: Optical device

[0090] 1d: Optical device

[0091] 10: Waveguide

[0092] 10d: Waveguide

[0093] 11: Base portion

[0094] 12: Rib portion

[0095] 20: Cladding

[0096] 25: Cladding

[0097] 30: Optical Modulator

[0098] 31: Phase change material layer

[0099] 32: Amorphous state

[0100] 33: Crystallized state

[0101] 40: Heat conducting components

[0102] 41: Thermal conductive material layer

[0103] 50: Heating component

[0104] 50a: Heating element

[0105] 51: Electrical contact section

[0106] 51a: electrical contact section

[0107] 52: Electrical contact section

[0108] 52a: electrical contact section

[0109] 53: Middle section

[0110] 53a: Middle section

[0111] 60: Electrical connection unit

[0112] 60c: electrical connection unit

[0113] 61: First metal pad

[0114] 61c: First metal pad

[0115] 62: Second metal pad

[0116] 62c: Second metal pad

[0117] 63:Contact

[0118] 63c:Contact

[0119] 64:Contact

[0120] 64c:Contact

[0121] 70: Light control unit

[0122] 71: Optical modulator

[0123] 72: Heat conducting components

[0124] 73: Phase change material layer

[0125] 74: layer of thermally conductive material

[0126] 80: optical system

[0127] 80e: optical system

[0128] 81: photon generator

[0129] 82: photon controller

[0130] 82d: photon controller

[0131] 82e: photon controller

[0132] 83: photon detector

[0133] 90: heating component

[0134] 91: connecting portion

[0135] 92: finger portion

[0136] 95: heating component

[0137] 96: connecting portion

[0138] 97: finger portion

[0139] 120: top surface

[0140] 121: sidewall

[0141] 122: sidewall

[0142] 400: top surface

[0143] 510: end portion

[0144] 510a: end portion

[0145] 511: inner end portion

[0146] 511a: inner end portion

[0147] 520: end portion

[0148] 520a: end portion

[0149] 521: inner end portion

[0150] 521a: inner end portion

[0151] 531a: middle contact portion

[0152] 532a: middle portion

[0153] 533a: middle portion

[0154] 720: upper surface

[0155] 811: optical signal

[0156] 812: optical signal

[0157] 813: optical signal

[0158] 814: optical signal

[0159] 831: optical signal

[0160] 832: optical signal

[0161] 833: optical signal

[0162] 841: lateral optical line

[0163] 842: longitudinal optical line

[0164] 843: optical line

[0165] 844: optical line

[0166] 845: first evanescent coupler

[0167] 846: second evanescent coupler

[0168] L11: first reference line

[0169] L12: first reference line

[0170] L13: first reference line

[0171] L21: second reference line

[0172] L22: second reference line

[0173] L23: second reference line

[0174] LG: longitudinal axis

[0175] LH: longitudinal axis

[0176] P1: first pitch

[0177] P2: second pitch

[0178] P3: first pitch

[0179] P4: second pitch

[0180] S10: method

[0181] S11: operation

[0182] S12: operation

[0183] S13: operation

[0184] S14: operation

[0185] V1: supply voltage / electrical pulse

[0186] V2: supply voltage / electrical pulse

[0187] W1: width

[0188] W2: width

[0189] W3: width

Claims

1. An optical device, characterized in that include: waveguide; an optical modulator comprising a phase change material and in direct contact with an outer surface of the waveguide; a heat-conducting component placed on the light modulator; and A heating component is placed on the heat-conducting component and is away from the light modulator and the waveguide, wherein heat generated from the heating component is transferred to the light modulator through the heat-conducting component, thereby inducing a phase change in the light modulator.

2. The optical device according to claim 1, characterized in that The heating component comprises: two electrical contact sections located at two ends of the longitudinal axis of the heating element; and A middle section connects the two electrical contact sections and contacts the thermally conductive component, wherein a width of the middle section varies in a transverse direction perpendicular to the longitudinal axis.

3. The optical device according to claim 1, characterized in that The thermally conductive component includes an electrical insulator.

4. The optical device according to claim 1, characterized in that The phase change material is configured to switch between an amorphous state and a crystalline state that exhibit different refractive indices and extinction coefficients for light traveling in the waveguide.

5. The optical device according to claim 1, characterized in that Further including: a plurality of light modulators disposed on the outer surface of the waveguide and arranged in an array; and A plurality of thermally conductive members are placed on each of the light modulators, wherein the heating member is placed on the plurality of thermally conductive members, and the heat from the heating member is transferred to the plurality of light modulators through the thermally conductive members.

6. The optical device according to claim 5, characterized in that A plurality of first reference lines and a plurality of second reference lines are defined on a plane in which the outer surface of the waveguide is located, and each reference line extends perpendicular to a longitudinal axis of the waveguide, the plurality of first reference lines are spaced apart from each other by a first spacing, and the plurality of second reference lines are spaced apart from each other by a second spacing, A first group of the plurality of light modulators is arranged along the first reference line, and a second group of the plurality of light modulators is arranged along the second reference line.

7. The optical device according to claim 6, characterized in that The first pitch is different from the second pitch.

8. An optical system, characterized in that include: a photon generator configured to generate an optical signal; a photon controller configured to modulate the optical signal from the photon generator and comprising: waveguide; an optical modulator comprising a phase change material and in direct contact with an outer surface of the waveguide; a heat-conducting component placed on the light modulator; and a heating member placed on the heat-conducting member, wherein heat generated from the heating member is transferred to the light modulator through the heat-conducting member, thereby inducing a phase change in the light modulator; and A photon detector is configured to receive the light signal from the photon controller.

9. The optical system according to claim 8, characterized in that Further including: An optical line is provided between the photon generator and the photon detector, wherein the waveguide is positioned adjacent to the optical line to form a space between the waveguide and the optical line.

10. The optical system according to claim 8, characterized in that The waveguide forms a ring resonator, and the heat conducting component and the heating component are placed on the ring resonator.

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