Power module and electronic device

Abstract

The utility model discloses a power module and an electronic device. The power module comprises an RC-IGBT; the driving integrated circuit is electrically connected with the RC-IGBT; the heat dissipation substrate (30) is provided with a first surface and a second surface which are oppositely arranged, and the RC-IGBT is arranged on the first surface of the heat dissipation substrate (30); an encapsulation resin (10) that encapsulates the RC-IGBT, the heat dissipation substrate (30), and the driving integrated circuit, at least part of the second surface of the heat dissipation substrate (30) being exposed from the encapsulation resin (10), and wherein the aspect ratio of the RC-IGBT is less than or equal to 1.56; the length of the packaging resin (10) in the length direction is less than or equal to 40mm; the width of the packaging resin (10) in the width direction is smaller than or equal to 26 mm; the rated current of the RC-IGBT is defined as I, and I meets the relational expression that I is larger than or equal to 45A and smaller than or equal to 55A. According to the power module provided by the embodiment of the invention, the miniaturization of the power module can be realized, and the failure probability of the RC-IGBT chip is remarkably reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a power module and an electronic device. BACKGROUND

[0002] The power module for driving the motor includes a power chip and a driving integrated circuit, compared with the traditional discrete device, it has the advantages of high integration, high reliability and is widely used. The miniaturization trend of the power module requires the product size to be smaller, the large current of the power module requires the chip size to be larger and may cause the corresponding product size to be larger, and the temperature rise under the large current brings the problem of reliability, therefore, how to make the power module have small size, large current and high reliability becomes a problem to be solved. SUMMARY

[0003] A series of simplified concepts are introduced in the summary part, which will be further described in detail in the specific embodiment part. The summary part of the present application does not mean to try to limit the key features and necessary technical features of the claimed technical solution, and even less to try to determine the protection scope of the claimed technical solution.

[0004] In order to at least partially solve the above problems, according to the first aspect of the present application, a power module is provided, comprising:

[0005] RC-IGBT;

[0006] a driving integrated circuit, the driving integrated circuit and the RC-IGBT are electrically connected;

[0007] a heat dissipation substrate (30), the heat dissipation substrate (30) has a first surface and a second surface arranged oppositely, wherein the RC-IGBT is arranged on the first surface of the heat dissipation substrate (30);

[0008] a packaging resin, the RC-IGBT, the heat dissipation substrate (30) and the driving integrated circuit are packaged by the packaging resin, at least part of the second surface of the heat dissipation substrate (30) is exposed from the packaging resin, wherein,

[0009] the aspect ratio of the RC-IGBT is less than or equal to 1.56;

[0010] the length of the packaging resin in the length direction is less than or equal to 40mm;

[0011] the width of the packaging resin in the width direction is less than or equal to 26mm; and

[0012] the rated current of the RC-IGBT is defined as I, I satisfies the relationship: 45A≤I≤55A.

[0013] The technical scheme has the following advantages and beneficial effects: according to the power module in the embodiment of the present application, by using RC-IGBT as a semiconductor switching element, and by packaging a large-current specification (45A≤I≤55A) RC-IGBT in a small packaging resin, and by reducing the aspect ratio of the RC-IGBT, the stress concentration and uneven high-temperature thermal expansion of the large-current specification (45A≤I≤55A) RC-IGBT are improved while realizing the miniaturization of the power module, the RC-IGBT chip failure probability is significantly reduced, and the reliability of the power module is improved.

[0014] Exemplarily, the aspect ratio of the RC-IGBT is also greater than 1.1.

[0015] The technical scheme has the following advantages and beneficial effects: according to the current circuit pattern design on the heat dissipation substrate, the transverse size of the power side pad for connecting with the RC-IGBT is much smaller than the longitudinal size, and the RC-IGBT transverse variable size is much smaller than the chip longitudinal variable size, so the large RC-IGBT width is not conducive to the miniaturization of the semiconductor device, therefore, the aspect ratio of the RC-IGBT is also greater than 1.1, that is, the longitudinal size is relatively large, which can be more conducive to the miniaturization of the semiconductor device.

[0016] Exemplarily, the length of the length direction of the packaging resin is also greater than or equal to 36mm; and

[0017] The width of the width direction of the packaging resin is also greater than or equal to 22mm.

[0018] The technical scheme has the following advantages and beneficial effects: by keeping the size of the packaging resin within the above range, the product miniaturization can be facilitated, the demand for 45A≤I≤55A current specification can be met as much as possible, a larger current specification can be packaged in a relatively small packaging resin, the problem of higher chip temperature and greater thermal stress due to the small size of the packaging resin is inhibited, and the chip failure probability is further reduced.

[0019] Exemplarily, the area of the heat dissipation substrate is S, S satisfies the relationship: 350mm 2 ≤S≤550mm 2 .

[0020] The technical scheme has the following advantages and beneficial effects: the packaging resin can meet the space requirement of the driving side frame or the driving side PCB (printed circuit board) for carrying the driving integrated circuit, and the packaging resin can also meet the space requirement of the heat dissipation substrate for dissipating heat of the power chip (such as IGBT and FRD, or RC-IGBT).

[0021] Exemplarily, the width of the RC-IGBT is greater than or equal to 2.4 mm and less than or equal to 4.6 mm.

[0022] The technical solution has the following advantages and beneficial effects: through such a setting, the value of the aspect ratio of the RC-IGBT cannot be too large, thereby reducing the chip failure probability, and the overall size of the product is not increased.

[0023] Exemplarily, the first surface side of the heat dissipation substrate has a power side pad, and the RC-IGBT is arranged on the power side pad.

[0024] The technical solution has the following advantages and beneficial effects: the power side pad of the first surface of the heat dissipation substrate can be used to realize the lead-out of the RC-IGBT for electrical connection with other components, and by arranging the RC-IGBT directly on the power side pad, the direct electrical connection of the RC-IGBT can be realized, the wiring of the power module is optimized, and the structure is simpler.

[0025] Exemplarily, the heat dissipation substrate comprises:

[0026] an insulating layer having a first surface and a second surface opposite to the first surface, wherein the insulating layer is at least one of an aluminum nitride ceramic layer or a silicon nitride ceramic layer;

[0027] a conductive layer arranged at least on the first surface of the insulating layer, wherein the conductive layer comprises:

[0028] a first conductive layer arranged on the first surface, or

[0029] a first conductive layer arranged on the first surface and a second conductive layer arranged on the second surface,

[0030] wherein the surface of the first conductive layer away from the insulating layer constitutes at least part of the first surface of the heat dissipation substrate, and the first conductive layer comprises the power side pad.

[0031] The technical solution has the following advantages and beneficial effects: by using a ceramic material with a higher thermal conductivity than Al2O3, the heat dissipation property of the heat dissipation substrate can be improved, so that the heat generated by the RC-IGBT, the conductive layer and the like can be dissipated, which is conducive to reducing the temperature of the power module 100, thereby inhibiting the accumulation of heat when the power module 100 is running, and ensuring safety. In addition, the insulating layer can also have an insulating effect, which can isolate the conductive layer electrically connected to the RC-IGBT from external electrical connection, thereby ensuring the normal operation of the power module 100 and improving the electrical safety of the power module 100.

[0032] Exemplarily, the number of RC-IGBTs is multiple, the number of power side pads is multiple, and the RC-IGBTs are arranged at intervals in the length direction, wherein the multiple RC-IGBTs include at least one high-voltage power side RC-IGBT and at least one low-voltage power side RC-IGBT, and the high-voltage power side RC-IGBT and the low-voltage power side RC-IGBT are arranged on different power side pads, respectively.

[0033] The above technical solution has the following advantages and beneficial effects: by arranging the at least one high-voltage power side RC-IGBT and the at least one low-voltage power side RC-IGBT on different power side pads, the different types of RC-IGBTs can be better electrically isolated, the connection of the required connection structure can be realized through the pins and the connecting lines, and the normal work of the power module is facilitated.

[0034] Exemplarily, the number of low-voltage power side RC-IGBTs is three, the number of high-voltage power side RC-IGBTs is three, and the power side pads include:

[0035] The number of low-voltage power side pads is three, and the three low-voltage power side pads are arranged at intervals in the length direction;

[0036] The number of high-voltage power side pads is one, and the one high-voltage power side pad is arranged at an interval with the three low-voltage power side pads in the length direction, the two sides of the packaging resin in the length direction are set as a first side and a second side, respectively, the low-voltage power side pads are closer to the first side in the length direction, the high-voltage power side pad is closer to the second side in the length direction, the three low-voltage power side RC-IGBTs are arranged one by one on the three low-voltage power side pads, respectively, the three high-voltage power side RC-IGBTs are arranged on the one high-voltage power side pad, and the three high-voltage power side RC-IGBTs are arranged at intervals in the length direction on the high-voltage power side pad.

[0037] The above technical solution has the following advantages and beneficial effects: by such an arrangement, the layout of the power module can be more reasonable, and the arrangement of the lead lines connected with the pads can be more simple and regular.

[0038] Exemplarily, the power module further includes:

[0039] The drive side frame is partially wrapped by the packaging resin, the drive side frame includes drive side pads and drive side pins, the drive integrated circuit is arranged on the drive side pads, and the drive integrated circuit is electrically connected with the drive side pins, wherein the heat dissipation substrate and the drive side frame are arranged at intervals in the width direction; or

[0040] A PCB board is wrapped by the encapsulation resin, and the PCB board has driving side pads, the power module further comprises driving side pins electrically connected with the PCB board, the driving integrated circuit is arranged on the driving side pads, and the driving integrated circuit is electrically connected with the driving side pins, wherein the heat dissipation substrate and the PCB board are arranged at intervals in the width direction.

[0041] The technical scheme has the following advantages and beneficial effects: the driving integrated circuit is arranged by using the driving side frame and the driving side pins are integrated, which can facilitate high integration, reduce the number of components, reduce the overall size, make the power module structure more compact, enhance heat dissipation, and improve the stability and reliability of the power module; the PCB board can realize wiring and support for the driving integrated circuit, and the PCB board structure is simple and friendly to encapsulation.

[0042] Exemplarily, the driving side pads comprise:

[0043] The low-voltage driving side pad is one;

[0044] The high-voltage driving side pad is one, one high-voltage driving side pad and one low-voltage driving side pad are arranged at intervals in the length direction, the two sides of the encapsulation resin in the length direction are set as a first side and a second side, the low-voltage driving side pad is closer to the first side in the length direction, the high-voltage driving side pad is closer to the second side in the length direction, the driving integrated circuit comprises a low-voltage driving integrated circuit and a high-voltage driving integrated circuit, one low-voltage driving integrated circuit is arranged on one low-voltage driving side pad, and one high-voltage driving integrated circuit is arranged on one high-voltage driving side pad, wherein

[0045] When the number of RC-IGBTs is multiple, and the multiple RC-IGBTs comprise multiple low-voltage power side RC-IGBTs and multiple high-voltage power side RC-IGBTs, one low-voltage driving integrated circuit is electrically connected with the multiple low-voltage power side RC-IGBTs respectively, and one high-voltage driving integrated circuit is electrically connected with the multiple high-voltage power side RC-IGBTs respectively.

[0046] The technical scheme has the following advantages and beneficial effects: in this way, the layout of the power module can be more reasonable, and the distribution of lead wires between the driving integrated circuit and the RC-IGBT can be more balanced.

[0047] Exemplarily, a bootstrap chip is further included, and the bootstrap chip is arranged on the driving side pins, wherein the driving side pins further comprise:

[0048] a floating power supply voltage pin, the floating power supply voltage pin being arranged apart from the high-voltage drive side pad on the side of the high-voltage drive side pad away from the heat dissipation substrate in the width direction, the floating power supply voltage pin having a bootstrap chip pad, and a bootstrap chip being arranged on the bootstrap chip pad;

[0049] a chip power supply voltage pin, the chip power supply voltage pin being arranged apart from the high-voltage drive side pad and the floating power supply voltage pin in the width direction, the bootstrap chip being electrically connected to the chip power supply voltage pin, and the floating power supply voltage pin being electrically connected to the high-voltage drive integrated circuit.

[0050] The above technical solution has the following advantages and beneficial effects: the bootstrap chip can achieve the effects of power supply isolation, improved drive voltage, and automatic gain control, and the bootstrap chip arranged on the drive side pin can optimize the circuit layout and wiring, which is conducive to the miniaturization of the power module.

[0051] Exemplarily, the bootstrap chip is further integrated in the high-voltage drive integrated circuit, and the drive side pin further includes:

[0052] a floating power supply voltage pin, the floating power supply voltage pin being arranged apart from the high-voltage drive side pad on the side of the high-voltage drive side pad away from the heat dissipation substrate in the width direction;

[0053] a chip power supply voltage pin, the chip power supply voltage pin being arranged apart from the high-voltage drive side pad and the floating power supply voltage pin in the width direction, the bootstrap chip being electrically connected to the chip power supply voltage pin, and the floating power supply voltage pin being electrically connected to the high-voltage drive integrated circuit.

[0054] The above technical solution has the following advantages and beneficial effects: by integrating the bootstrap chip in the high-voltage drive integrated circuit, the circuit design can be simplified, the number of components and connections can be reduced, space can be saved, the complexity and failure rate of the power module can be reduced, and the miniaturization of the power module is facilitated.

[0055] Exemplarily, the power module further includes:

[0056] power side pins, part of the power side pins being wrapped by the packaging resin and located on the side of the heat dissipation substrate away from the drive integrated circuit in the width direction, and the power side pins being electrically connected to the RC-IGBT;

[0057] Each RC-IGBT includes:

[0058] a gate pad, the gate pad being electrically connected to the drive integrated circuit,

[0059] The emitter pad is provided with a pin electrical connection pad, the pin electrical connection pad is connected with the power side pin through a pin electrical connection line, the pin electrical connection pad extends in the width direction, each RC-IGBT is provided with a plurality of pin electrical connection pads, the pin electrical connection pads on each RC-IGBT are arranged at intervals in the length direction, a plurality of pin electrical connection lines are arranged between each RC-IGBT and the corresponding power side pin, and the pin electrical connection lines of each RC-IGBT are connected with the pin electrical connection pads one by one.

[0060] The technical scheme has the following advantages and beneficial effects: through the arrangement, the RC-IGBT and the corresponding pin can be electrically connected, and the RC-IGBT forms a suitable circuit structure to realize the normal function of the power module.

[0061] Exemplarily, the two sides of the packaging resin along the length direction are respectively a first side and a second side, the pin electrical connection line extends obliquely towards the side close to the first side in the width direction relative to the pin electrical connection pad, an included angle a is formed between the pin electrical connection line and the pin electrical connection pad, and the a satisfies the relationship: 120°≤a≤180°.

[0062] The technical scheme has the following advantages and beneficial effects: through the arrangement, the pin electrical connection line can be more conveniently wired, and the insulation distance between the pin electrical connection lines can be ensured, so that the pin electrical connection lines are prevented from being short-circuited due to being too close to each other and damaging the device.

[0063] Exemplarily, the length of the pin electrical connection line is L5, and L5 satisfies the relationship: 8mm≤L5≤16mm.

[0064] The technical scheme has the following advantages and beneficial effects: through the arrangement, the length of the pin electrical connection line can be ensured to satisfy the normal electrical connection between the emitter of the RC-IGBT and the power side pin, and the problems of material waste, increased resistance and increased inductance caused by the pin electrical connection line being too long can be inhibited, thereby reducing the power consumption of the power module and improving the stability of the power module.

[0065] Exemplarily, the RC-IGBT comprises a terminal structure, and the terminal structure adopts a lateral variable doping structure.

[0066] The technical scheme has the following advantages and beneficial effects: the terminal structure of the RC-IGBT adopts a lateral variable doping structure, which can further reduce the chip area of the RC-IGBT compared with a field limiting ring or a field limiting ring plus a field plate terminal structure, thereby facilitating the miniaturization of the module.

[0067] Exemplarily, the aspect ratio of the RC-IGBT is less than or equal to 1.488.

[0068] The above technical solution has the following advantages and beneficial effects: by reducing the aspect ratio of the RC-IGBT, the stress concentration and uneven high-temperature thermal expansion of the RC-IGBT of a large-current specification (45A≤I≤55A) are improved while miniaturizing the power module, the RC-IGBT chip failure probability is significantly reduced, and thus the reliability of the power module is improved.

[0069] Another aspect of the present application provides an electronic device comprising the aforementioned power module.

[0070] The above technical solution has the following advantages and beneficial effects: since the electronic device comprises the aforementioned power module, it has substantially the same advantages as the aforementioned power module. BRIEF DESCRIPTION OF DRAWINGS

[0071] The following drawings of the present application are hereby included as part of the present application for understanding the present application. The drawings of the embodiments of the present application and their descriptions are used to explain the devices and principles of the present application.

[0072] Figure 1 A top view schematic diagram of the power module in an embodiment of the present application is shown.

[0073] Figure 2 A labeled schematic diagram of the dimensions of each direction of the power module in an embodiment of the present application is shown.

[0074] Figure 3 A top view schematic diagram of the power module in an embodiment of the present application is shown.

[0075] Figure 4A A cross-sectional schematic diagram of the power module in one example obtained along the cross-sectional line AA is shown. Figure 3

[0076] A cross-sectional schematic diagram of the power module in another example obtained along the cross-sectional line AA is shown. Figure 4B Figure 3 Reference signs:

[0077] 100, power module;

[0078] 100, power module;

[0079] 10, encapsulating resin; 11, first side; 12, second side;

[0080] 20, drive-side frame; 21, drive-side pad; 22, high-voltage drive-side pad; 221, high-voltage drive integrated circuit; 23, low-voltage drive-side pad; 231, low-voltage drive integrated circuit;

[0081] ​24, drive side pin; 241, floating supply voltage pin; 243, chip supply voltage pin; 25, bootstrap chip pad; 251, bootstrap chip;

[0082] 30, heat sink substrate; 31, power side pad; 32, high voltage power side pad; 321, high voltage power side RC-IGBT; 33, low voltage power side pad; 331, low voltage power side RC-IGBT; 34, power side pin; 35, gate pad; 36, emitter pad; 361, pin electrical connection spot; 262, pin electrical connection line.

[0083] 301, first conductive layer; 302, second conductive layer; 303, insulating layer; 3001, first surface; 3002, second surface; 3031, first surface; 3032, second surface. DETAILED DESCRIPTION

[0084] In the following description, numerous specific details are set forth to provide a more thorough understanding of the present application. However, it will be apparent to one of skill in the art upon

[0085] It should be understood that the present application can be carried out in different forms without departing from the spirit or essential characteristics thereof. To that end, the present embodiments are to be considered in all respects as illustrative and not restrictive. In other instances, well-known features have not been described in detail to avoid obscuring the application. The drawings are only for purposes of illustration and are not exclusive. Identical reference numerals designate corresponding parts throughout the drawings.

[0086] It should be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.

[0087] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device described is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features.

[0088] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0089] Embodiments of the application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the application should not be construed as limited to the particular shapes of the regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. The regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a device and are not intended to limit the scope of the application.

[0090] For a thorough understanding of the application, reference is made to the following detailed description taken in conjunction with the accompanying drawings, in which:

[0091] The application will be described below with reference to the drawings, in which: Figures 1 to 4B A power module in an embodiment of the application is described below, in which, for the sake of clear dimension marking, Figure 2 The reference numbers of a plurality of structures are omitted in the drawings, and they can be referred to Figure 1 The technical features in the embodiments of the application can be combined with each other without conflict.

[0092] To solve the technical problems mentioned in the background art, as shown in Figure 1 and Figure 2 The embodiments of the application provide a power module 100, which includes an RC-IGBT, a driving integrated circuit, a heat dissipation substrate 30, a packaging resin 10, and the like.

[0093] A reverse conducting IGBT (RC-IGBT) can be a semiconductor switching element substantially in a rectangular shape, including an IGBT (Insulated Gate Bipolar Transistor) and a freewheeling diode arranged on one semiconductor substrate. Since the IGBT chip and the freewheeling diode arranged on different semiconductor substrates each include a termination region and an active region, the termination regions can be shared when the two devices are combined into one chip, so that the area of the termination region can be reduced. Therefore, the size of the RC-IGBT is generally smaller than that of a structure in which an IGBT and a freewheeling diode are arranged on different semiconductor substrates. Therefore, in the case of using an RC-IGBT as a power chip of a power module, the size of the power chip and even the size of the power module can be reduced. The reverse conducting IGBT is a single type power chip, so that the number of dies of the power module 100 can be reduced, and the number of bonding wires can be reduced.

[0094] In some embodiments, the RC-IGBT includes a termination structure, which can adopt a lateral variable doping structure. The above technical solution has the following advantages and beneficial effects: the termination structure of the RC-IGBT adopts a lateral variable doping structure, which can further reduce the chip area of the RC-IGBT compared to a field limiting ring or a field limiting ring plus field plate termination structure, thereby facilitating the miniaturization of the module.

[0095] Lateral variable doping refers to forming a region with a gradual change in impurity doping concentration in the termination region of the device by, for example, ion implantation. Typically, the substrate region near the heavily doped main junction is ion implanted to form a lateral variable doping structure. The closer the region to the main junction, the higher the doping concentration, and the farther the region, the lower the doping concentration.

[0096] In some embodiments, the number of RC-IGBTs is multiple, for example, including three high-voltage power side RC-IGBTs and three low-voltage power side RC-IGBTs constituting an inverter. Specifically, the number of RC-IGBTs can be reasonably set according to actual needs.

[0097] In some embodiments, the rated current of the RC-IGBT is defined as I, and I satisfies the relationship: 45A≤I≤55A. In the embodiments of the present application, in order to realize a larger current specification in a smaller packaging resin, for example, to realize packaging for 45A≤I≤55A, the related sizes of the packaging resin and the RC-IGBT are optimized, which will be described below.

[0098] The drive integrated circuits are electrically connected with the RC-IGBTs for controlling the RC-IGBTs, for example, the drive integrated circuits are electrically connected with the RC-IGBTs via electrical connectors such as wires, the drive integrated circuits control the RC-IGBTs, for example, the drive integrated circuits drive the RC-IGBTs to turn on or turn off, for example, the drive integrated circuits protect the RC-IGBTs when abnormality occurs (for example, overvoltage protection and / or overtemperature protection and / or electrostatic protection, etc.).

[0099] The number of the drive integrated circuits can be reasonably set according to the RC-IGBTs to be driven, for example, the number of the drive integrated circuits can be one or more, when the number is more than one, it can include one high-voltage drive integrated circuit and one low-voltage drive integrated circuit, or it can include three high-voltage drive integrated circuits and one low-voltage drive integrated circuit, or other suitable cases. Among them, the high-voltage drive integrated circuits drive the high-voltage power side RC-IGBTs to turn on or turn off, and the low-voltage drive integrated circuits drive the low-voltage power side RC-IGBTs to turn on or turn off. Optionally, a plurality of electronic components such as transistors, diodes, triodes, resistors, or capacitors can be integrated in the drive integrated circuits.

[0100] The heat dissipation substrate 30 has a first surface and a second surface arranged oppositely, wherein the RC-IGBTs are arranged on the first surface of the heat dissipation substrate 30, for example, the first surface side of the heat dissipation substrate 30 has power side pads 31, and the RC-IGBTs are arranged on the power side pads 31. The RC-IGBTs can be supported by the heat dissipation substrate 30, and the heat dissipation substrate 30 has good thermal conductivity, which can improve the heat dissipation effect of the RC-IGBTs and improve the reliability of the RC-IGBTs. The power side pads 31 on the first surface side of the heat dissipation substrate can realize the lead-out of the RC-IGBTs for electrical connection with other components, and the direct arrangement of the RC-IGBTs on the power side pads 31 can realize the direct electrical connection of the RC-IGBTs, which optimizes the wiring of the power module and makes the structure simpler. Optionally, the heat dissipation substrate can be a ceramic substrate with a conductive layer or other suitable type of substrate.

[0101] In some embodiments, the area of the heat dissipation substrate 30 is set as S, and S satisfies the relationship: 161.25mm2≤S≤275mm2. 2 By such arrangement, the encapsulation resin can meet the space requirement of the drive side frame or the drive side PCB (printed circuit board) for carrying the drive integrated circuits, and can also meet the space requirement of the heat dissipation substrate for heat dissipation of the power chips (such as IGBT and FRD, or RC-IGBT).

[0102] The encapsulation resin (10) encapsulates the RC-IGBT, the heat dissipation substrate 30, and the driving integrated circuit, etc. The encapsulation resin is obtained by mold encapsulation, which can be generated by transfer molding with thermosetting resin, for example, and the encapsulation resin can be an epoxy resin or other resin material suitable for semiconductor module encapsulation. The opposite sides in the width direction of the encapsulation resin are the driving side and the power side, respectively, and at least part of the heat dissipation substrate, the RC-IGBT, and the driving integrated circuit are encapsulated in the encapsulation resin. Thus, the encapsulation resin can provide physical and electrical protection for at least part of the heat dissipation substrate, the RC-IGBT, and the driving integrated circuit to prevent damage to at least part of the heat dissipation substrate, the RC-IGBT, and the driving integrated circuit caused by external environmental impact, and ensure normal operation of the power module 100.

[0103] In the related art, the power module product for driving a motor with a current specification of 45A≤I≤55A usually has an encapsulation resin (sometimes also referred to as a plastic package) with a length of about 52.5mm and a width of about 31mm, and the area of the heat dissipation substrate reaches about 713mm 2 The power chip usually adopts IGBT and fast recovery diode (FRD), and only the IGBT chip with a large current specification can be encapsulated in a large package in the related art, which is obviously not conducive to product miniaturization. However, the present application realizes encapsulation of a larger current specification chip in a small package.

[0104] In the embodiments of the present application, in order to realize a larger current specification power chip in a smaller encapsulation resin, for example, to realize the encapsulation of a 45A≤I≤55A power chip, the related dimensions of the encapsulation resin and the RC-IGBT are optimized. In some embodiments of the present application, as shown in Figure 1 and Figure 2 The width L1 of the width direction of the encapsulation resin (i.e., the width direction shown in Figure 2 ) is set, and L1 is less than or equal to 26mm. The length L2 of the length direction of the encapsulation resin of the power module (i.e., the length direction shown in Figure 2 ) is set, and L2 is less than or equal to 40mm. By reducing the length and width of the encapsulation resin, product miniaturization can be facilitated.

[0105] When 45A≤I≤55A, it belongs to a large current specification; the larger the current specification of the chip, the higher the temperature of the chip, and the greater the thermal stress that the corresponding chip receives; for a relatively small package, heat dissipation is usually limited, resulting in a higher chip temperature and greater thermal stress, which in turn increases the probability of chip failure. Therefore, in some embodiments of the present application, the width L1 of the packaging resin in the width direction is also greater than or equal to 22 mm, i.e., 22 mm≤L1≤26 mm, and the length L2 of the packaging resin in the length direction is also greater than or equal to 36 mm, i.e., 36 mm≤L2≤40 mm. By keeping the size of the packaging resin within the above range, it is possible to facilitate product miniaturization while meeting the demand for 45A≤I≤55A current specifications as much as possible, to package larger current specifications in a relatively small packaging resin, to suppress the problem of higher chip temperature and greater thermal stress due to the small size of the packaging resin, and to further reduce the probability of chip failure.

[0106] When the rated current I of the RC-IGBT is less than 45A, the heat dissipation substrate and the package have a large heat dissipation margin for the RC-IGBT chip, and since the current specification is relatively small, the heat generated by the RC-IGBT chip during operation is low, and the temperature is also low, thereby reducing the thermal stress on the chip and almost eliminating the problem of failure of the RC-IGBT chip packaged in a relatively small package, so that the aspect ratio of the chip and the material of the ceramic substrate do not limit the power module and have little effect on the reliability of the chip.

[0107] However, when 45A≤I≤55A, it belongs to a large current specification; the larger the current specification of the chip, the higher the temperature of the chip, and the greater the thermal stress that the corresponding chip receives; and when in the above small package (e.g., L2≤40 mm, L1≤26 mm), the chip heat dissipation is limited, resulting in a higher chip temperature and greater thermal stress; especially when the ratio of the length L3 of the RC-IGBT chip to the width L4 of the RC-IGBT chip (i.e., the aspect ratio) is too large, the stress concentration on the large aspect ratio chip increases sharply, the thermal expansion inhomogeneity increases sharply under high temperature, and the stress difference between different regions increases sharply, thereby, under the combined action of the three factors of large current specification, large aspect ratio of RC-IGBT, and small package, the probability of chip failure increases sharply.

[0108] Therefore, in the embodiments of the present application, the aspect ratio of the RC-IGBT is less than or equal to 1.56, for example, 1.5, 1.45, 1.4, 1.35, 1.3, or 1.2, etc. By such a setting, the aspect ratio of the chip under the large current specification (45A≤I≤55A) is reduced, so that under the above small package (for example, L2≤40mm, L1≤26mm), the chip stress concentration and the problem of uneven high-temperature thermal expansion under the large current specification can be reduced, the failure probability of the chip under the large current specification is greatly reduced, thereby facilitating to provide a semiconductor device (for example, a power module) with small size, large current specification and high reliability. In some examples, the aspect ratio of the RC-IGBT can be further less than or equal to 1.488, and in other examples, it can be less than or equal to 1.4, so as to reduce the stress of the chip under the large current specification and make the stress increase more gently, thereby effectively solving the problem of uneven high-temperature thermal expansion and greatly reducing the failure probability of the chip under the large current specification.

[0109] Further, when the heat dissipation substrate area S is in the range of 350mm 2 -550mm 2 , although the chip heat dissipation is further limited, by making the aspect ratio of the RC-IGBT less than or equal to 1.56, thereby reducing the aspect ratio of the chip under the large current specification (45A≤I≤55A), so that under the above small package and small heat dissipation substrate (for example, L2≤40mm, L1≤26mm, 350mm 2 ≤heat dissipation substrate area S≤550mm 2 ), the chip stress concentration under the large current specification can be reduced, and the problem of uneven high-temperature thermal expansion can be effectively solved, the failure probability of the chip under the large current specification is greatly reduced, thereby facilitating to provide a semiconductor device (for example, a power module) with small size, large current specification and high reliability.

[0110] If the aspect ratio is too small, for example, less than or equal to 1.1, it means that the width of the RC-IGBT chip increases (i.e., the lateral dimension increases). According to the current circuit pattern design on the heat dissipation substrate, the lateral dimension of the power side pad 31 for connecting with the RC-IGBT is much smaller than the longitudinal dimension. Correspondingly, the RC-IGBT lateral variable dimension is much smaller than the chip longitudinal variable dimension. Therefore, the larger width of the RC-IGBT is not conducive to the miniaturization of the semiconductor device. Therefore, in some embodiments, the aspect ratio of the RC-IGBT is greater than 1.1, i.e., the longitudinal dimension is relatively large, which can be more conducive to the miniaturization of the semiconductor device. In some embodiments, the aspect ratio of the RC-IGBT is less than or equal to 1.56 and greater than or equal to 1.45, or other suitable ranges, which are not limited here.

[0111] It is worth mentioning that, in the embodiments of the present application, the aspect ratio of the RC-IGBT, i.e. the ratio of the length L3 and the width L4 of the RC-IGBT, is generally greater than the width L4. Wherein, the width direction of the packaging resin is generally parallel to the length direction of the RC-IGBT, so the length L3 of the length direction of the RC-IGBT is the size of the RC-IGBT in the width direction of the packaging resin, and the length direction of the packaging resin is generally parallel to the width direction of the RC-IGBT, so the width L4 of the width direction of the RC-IGBT is the size of the RC-IGBT in the length direction of the packaging resin.

[0112] If the width of the RC-IGBT is too small, the aspect ratio of the RC-IGBT may be increased, as mentioned above, a large aspect ratio is prone to increase the failure probability of the RC-IGBT, and too large width is also prone to increase the overall size of the power module, therefore, in some embodiments, the width L4 of the RC-IGBT is greater than or equal to 2.4mm and less than or equal to 4.6mm, so that the value of the aspect ratio of the RC-IGBT is not too large, thereby reducing the chip failure probability and not increasing the overall size of the product.

[0113] Further, in order to improve the heat dissipation effect of the power module, at least part of the second surface of the heat dissipation substrate 30 (which can also be referred to as the bottom surface of the heat dissipation substrate) is exposed from the packaging resin, for example, the bottom surface of the heat dissipation substrate 30 is exposed from the packaging resin, and other surfaces are covered by the packaging resin. Through such a setting, the heat dissipation performance of the heat dissipation substrate to the outside of the power module can be improved, thereby improving the stability and reliability of the power module. In one example, the second surface of the heat dissipation substrate can also be flush with the bottom surface of the packaging resin.

[0114] Figure 3 A top view of the power module is shown, which is compared with Figure 1 and Figure 2 which does not present some details inside the packaging resin. Among them, Figure 4A and Figure 4B are cross-sectional schematic diagrams of the power module obtained along the AA section line in Figure 3 In some embodiments, as shown in Figure 4A and Figure 4B , the heat dissipation substrate 30 has oppositely arranged first surface 3001 and second surface 3002, wherein the RC-IGBT is arranged on the first surface 3001 of the heat dissipation substrate 30. In some examples, as shown in Figure 4A and Figure 4BAs shown, the heat dissipation substrate 30 includes an insulating layer 303 having a first surface 3031 and a second surface 3032 opposite to the first surface 3031, and a conductive layer disposed at least on the first surface 3031 of the insulating layer 303. The insulating layer 303 can be a ceramic layer, which can be a ceramic material having a higher thermal conductivity than Al2O3, for example, at least one of an aluminum nitride ceramic layer or a silicon nitride ceramic layer. By using a ceramic material having a higher thermal conductivity than Al2O3, the heat dissipation property of the heat dissipation substrate can be improved, so that the heat generated by the RC-IGBT, the conductive layer, etc. can be dissipated, which is conducive to reducing the temperature of the power module 100, thereby inhibiting the accumulation of heat when the power module 100 is running, and ensuring safety. In addition, the insulating layer can also have an insulating effect, which can prevent the conductive layer electrically connected to the RC-IGBT from being electrically connected to the outside, thereby ensuring the normal operation of the power module 100, and improving the electrical safety of the power module 100.

[0115] In some embodiments, as shown, Figure 4A The conductive layer of the heat dissipation substrate 30 can include a first conductive layer 301 disposed on the first surface 3031 of the insulating layer 303, that is, the surface of the first conductive layer 301 away from the insulating layer 303 constitutes at least part of the first surface 3001 of the heat dissipation substrate 30, and the second surface 3032 of the insulating layer 303 constitutes the second surface 3002 of the heat dissipation substrate 30, so that at least part of the second surface 3032 of the insulating layer 303 is exposed in the encapsulating resin 10.

[0116] In other embodiments, the conductive layer of the heat dissipation substrate 30 can be at least two layers, for example, the conductive layer includes a first conductive layer 301 and a second conductive layer 302, the first conductive layer 301 is disposed on the first surface 3031 of the insulating layer 303, and the second conductive layer is disposed on the second surface 3032 of the insulating layer 303. The surface of the first conductive layer 301 away from the insulating layer 303 constitutes at least part of the first surface 3001 of the heat dissipation substrate 30, and the surface of the second conductive layer 302 away from the insulating layer 303 constitutes at least part of the second surface 3002 of the heat dissipation substrate 30, so that at least part of the surface of the second conductive layer 302 is exposed in the encapsulating resin 10.

[0117] Optionally, the material of the conductive layer can be a metal material, for example, one or more of copper, aluminum, silver, gold, tin, etc., for example, the material of the conductive layer includes copper.

[0118] In some embodiments, the first conductive layer 301, for example, a copper layer, can be etched with a pattern, which can correspond to the power side pads 31 corresponding to one or more RC-IGBTs, and the first conductive layer includes the power side pads 31, and there is a gap between adjacent power side pads 31, and the gap exposes part of the insulating layer 303, and the copper layer can carry the RC-IGBT and play a conductive role. For the heat dissipation substrate 30 with the second conductive layer 302, the second conductive layer 302 can be patternless, which is exposed from the bottom surface of the plastic package, and by taking advantage of the good thermal conductivity of the second conductive layer 302, the heat dissipation performance of the heat dissipation substrate 30 is further improved, so as to ensure the normal operation of the power module 100 and improve the electrical safety of the power module 100.

[0119] The heat dissipation substrate 30 can be made by any suitable process, for example, active metal bonding (AMB) technology, which uses active metal solder containing a small amount of active metal elements (Ti, Zr, Hf, V, Nb or Ta) to realize the welding between the metal, for example, copper foil, and the ceramic substrate (i.e. the insulating layer). The above-mentioned metal elements have high activity and can improve the wettability of the solder to the ceramic after melting, so that the ceramic surface can be welded with the metal without metallization. The general process of the technology is as follows: first, coat the solder on the ceramic substrate, then solder sintering under vacuum and high temperature, weld the copper layer and the ceramic substrate, then perform photoetching and copper etching of the circuit pattern, and finally perform active metal solder layer etching. The copper / ceramic interface formed by the AMB process has better bonding strength. When the insulating layer in the embodiments of the present application is an aluminum nitride ceramic layer or a silicon nitride ceramic layer, the heat dissipation substrate 30 can be made by active metal brazing technology. In some other embodiments, the first conductive layer can also be at least part of a metal frame, which can be arranged on the insulating layer by, for example, welding or bonding.

[0120] In some embodiments, the number of RC-IGBTs is multiple, the number of power side pads 31 of the heat dissipation substrate is multiple, and the multiple RC-IGBTs are arranged in the length direction of the packaging resin 10, and can also be arranged staggered in the width direction of the packaging resin, that is, the multiple RC-IGBTs are not aligned in the width direction of the packaging resin, or can also be aligned in the width direction. The specific arrangement can be reasonably set according to the actual layout requirements of the power module.

[0121] In some embodiments, the plurality of RC-IGBTs includes at least one high-voltage power-side RC-IGBT 321 and at least one low-voltage power-side RC-IGBT 331, and the high-voltage power-side RC-IGBT 321 and the low-voltage power-side RC-IGBT 331 are arranged on different power-side pads 31, respectively. By arranging the at least one high-voltage power-side RC-IGBT 321 and the at least one low-voltage power-side RC-IGBT 331 on different power-side pads 31, different types of RC-IGBTs can be better electrically isolated, and the connection of the required connection structure can be realized through pins and connecting wires, which is conducive to the normal operation of the power module.

[0122] Optionally, the plurality of RC-IGBTs can be arranged according to actual needs. In the embodiments of the present application, some details of the power module are described mainly by taking the case where the number of low-voltage power-side RC-IGBTs is three and the number of high-voltage power-side RC-IGBTs is three as an example, but this is not intended to constitute a limitation. In some possible embodiments, there can be other different numbers of high-voltage power-side RC-IGBTs or low-voltage power-side RC-IGBTs.

[0123] In some embodiments, the power-side pads 31 of the heat dissipation substrate 30 include low-voltage power-side pads 33 and high-voltage power-side pads 32, wherein the low-voltage power-side pads 33 are three, the three low-voltage power-side pads 33 are arranged at intervals in the length direction of the packaging resin, the high-voltage power-side pads 32 are one, and the one high-voltage power-side pad 32 is arranged at an interval from the three low-voltage power-side pads 33 in the length direction of the packaging resin. The two sides of the packaging resin along the length direction are set as a first side 11 and a second side 12, respectively, the low-voltage power-side pads 33 are more adjacent to the first side 11 in the length direction, and the high-voltage power-side pads 32 are more adjacent to the second side 12 in the length direction of the packaging resin. By such an arrangement, the layout of the power module can be more reasonable, and the arrangement of the lead wires connected to the pads can be more simple and regular.

[0124] Optionally, the three low-voltage power-side RC-IGBT 331 are arranged one-to-one on the three low-voltage power-side pads 33, respectively, and the three high-voltage power-side RC-IGBT 321 are arranged on the one high-voltage power-side pad 32, and the three high-voltage power-side RC-IGBT are arranged at intervals in the length direction of the packaging resin on the high-voltage power-side pad 32. By arranging the three high-voltage power-side RC-IGBT corresponding to one high-voltage power-side pad 32, the number of pins and wires can be reduced, the layout structure of the power module can be simplified, and the structure can be more compact, which is conducive to the miniaturization of the power module.

[0125] In some embodiments, each low-voltage power side pad 33 has an edge arranged extending in the length direction of the encapsulation resin near the side of the drive side frame, and the size of the edge in the length direction of the encapsulation resin is set as L6, and the range of L6 is between 3.5mm-5.5mm. And the high-voltage power side pad 32 has a first edge extending in the width direction of the encapsulation resin, and the first edge is away from the second side 12 of the encapsulation resin, wherein the size of the first edge in the width direction of the encapsulation resin is set as L7, and the range of L7 is between 9mm-11mm.

[0126] In other embodiments, each high-voltage power side RC-IGBT 321 can correspond to one high-voltage power side pad 32, or two high-voltage power side RC-IGBTs can correspond to one high-voltage power side pad. Or, in other embodiments, at least two low-voltage power side RC-IGBTs can correspond to one low-voltage power side pad. Specifically, it can be reasonably set according to actual needs.

[0127] More specifically, in some embodiments, the power module 100 further comprises power side pins 34, part of the power side pins 34 are wrapped by the encapsulation resin and located on the side of the heat dissipation substrate 30 away from the drive integrated circuit 20 in the width direction of the encapsulation resin, and the power side pins 34 are electrically connected with the RC-IGBTs, and the external circuit of the RC-IGBT can be electrically connected through the power side pins.

[0128] In some embodiments, each RC-IGBT comprises a gate pad 35 and an emitter pad 36, the gate pad 35 is electrically connected with the drive integrated circuit, and the emitter pad 36 is provided with a pin electrical connection spot 361, and the pin electrical connection spot 361 is connected with the power side pin 34 through a pin electrical connection line 262, and the pin electrical connection spot 361 is arranged extending in the width direction of the encapsulation resin, and each RC-IGBT is provided with a plurality of pin electrical connection spots 361, and the plurality of pin electrical connection spots 361 on each RC-IGBT are arranged spaced apart in the length direction of the encapsulation resin, and each RC-IGBT is provided with a plurality of pin electrical connection lines 262 between the RC-IGBT and the corresponding power side pin 34, and the plurality of pin electrical connection lines 262 of each RC-IGBT are connected with the plurality of pin electrical connection spots 361 one by one. Through such a setting, the electrical connection between the RC-IGBT and the corresponding pin can be realized, and by making the RC-IGBT form a suitable circuit structure, the normal function of the power module can be realized.

[0129] The gate pad 35 can be located at a position substantially in the middle of the side of the RC-IGBT near the drive side frame 20, or can also be located at a corner of the RC-IGBT.

[0130] The end of each power side pin 34 for electrically connecting with the RC-IGBT is wrapped by the encapsulation resin, and the other end of the power side pin 34 extends out of the encapsulation resin to facilitate electrical connection with the external circuit.

[0131] In some embodiments, the two sides of the encapsulation resin along the length direction thereof are set as the first side 11 and the second side 12 respectively, the pin electric connection wire 262 is inclined to extend towards the side of the first side 11 in the width direction of the encapsulation resin relative to the pin electric connection pad 361, and an included angle a is formed between the pin electric connection wire 262 and the pin electric connection pad 361, which satisfies the relationship: 120°≤a≤180°. By making the included angle a satisfy the above relationship, the wire bonding of the pin electric connection wire can be facilitated, and the insulation distance between the pin electric connection wires can also be ensured to avoid short circuit of the pin electric connection wires due to too close distance and damage of the device.

[0132] In some embodiments, the length of the pin electric connection wire 262 is set as L5, which satisfies the relationship: 8mm≤L5≤16mm. By such setting, the length of the pin electric connection wire 262 can be ensured to satisfy the normal electrical connection between the emitter of the RC-IGBT and the power side pin 34, while the problems of material waste, resistance increase and inductance increase due to too long length of the pin electric connection wire can be inhibited, thereby reducing the power module power consumption and improving the stability of the power module.

[0133] It is worth mentioning that, in the embodiments of the present application, the number of the pin electric connection wires 262 for connecting the RC-IGBT and the corresponding power side pin can be 1 or greater than or equal to 2, and the drawings of the present application mainly show the case where the number of the pin electric connection wires 262 is greater than 2, but this is not intended to be limiting.

[0134] Further, in some embodiments of the present application, a driving side frame 20 is further included, part of the driving side frame 20 is wrapped by the encapsulation resin, the driving side frame 20 includes a driving side pad 21 and a driving side pin 24, a driving integrated circuit is arranged on the driving side pad 21, and the driving integrated circuit is electrically connected with the driving side pin 24, wherein the heat dissipation substrate 30 and the driving side frame 20 are arranged in the width direction with a spacing. Optionally, part of the driving side pin 24 extends out of the encapsulation resin to facilitate electrical connection with the external circuit. By arranging the driving integrated circuit and integrating the driving side pin by using the driving side frame, the high integration can be facilitated, and the number of elements can be reduced, the overall size can be reduced, and the structure of the power module is more compact. The heat dissipation can be enhanced, and the stability and reliability of the power module can be improved.

[0135] In some other embodiments, the driving side frame 20 can also be replaced by a PCB board (i.e. printed circuit board) encapsulated by the encapsulation resin, the PCB board having driving side pads, the power module further comprising driving side pins (e.g. the driving side pins and the PCB board are two independent devices), the driving side pins being electrically connected with the PCB board (e.g. the driving side pins and the PCB board are electrically connected by welding or other suitable manners), the driving integrated circuits being arranged on the driving side pads, the driving integrated circuits being electrically connected with the driving side pins, wherein the heat dissipation substrate 30 is arranged in the width direction of the encapsulation resin. The side of the PCB board for arranging the driving integrated circuits can have various wirings and pad areas for placing the driving integrated circuits, and the wirings can be used to realize the electrical connection between each pad area and the corresponding driving side pin or structure. Specifically, the structure of the PCB board can be reasonably selected according to actual needs, which is not specifically limited here. The PCB board can realize the wiring and support for the driving integrated circuits, and the structure of the PCB board is simple and friendly to encapsulation. In some examples, the corresponding driving side pads on the PCB board and the driving side pins can be electrically connected by, for example, welding, plug-in connection, bonding wire or spring connection, etc., which is not specifically limited here.

[0136] The PCB board can be a substrate for realizing the electrical connection between electronic components by patterning the conductive copper foil on the surface of insulating materials (such as glass fiber, epoxy resin, etc.), and the PCB board realizes the electrical connection between electronic components through these copper foil lines and supports the fixation of components on the board. Optionally, the PCB board can be a single-sided board, a double-sided board or a multi-sided board, etc.

[0137] In the following, some details of the driving side frame 20 will be described taking the driving side frame 20 as an example.

[0138] In some embodiments, the drive-side pads 21 include one low-voltage drive-side pad 23 and one high-voltage drive-side pad 22, the one low-voltage drive-side pad 23 and the one high-voltage drive-side pad 22 are arranged in the length direction with a spacing, the length direction is set as a first side 11 and a second side 12, the low-voltage drive-side pad 23 is closer to the first side 11 in the length direction, the high-voltage drive-side pad 22 is closer to the second side 12 in the length direction, the drive integrated circuit includes a low-voltage drive integrated circuit 231 and a high-voltage drive integrated circuit 221, one low-voltage drive integrated circuit 231 is arranged on one low-voltage drive-side pad 23, and one high-voltage drive integrated circuit 221 is arranged on one high-voltage drive-side pad 22, wherein, when the number of RC-IGBTs is a plurality, and the plurality of RC-IGBTs include a plurality of low-voltage power-side RC-IGBTs and a plurality of high-voltage power-side RC-IGBTs, one low-voltage drive integrated circuit 231 is electrically connected to the plurality of low-voltage power-side RC-IGBTs 331 (for example, one low-voltage drive integrated circuit 231 is electrically connected to three low-voltage power-side RC-IGBTs 331), and one high-voltage drive integrated circuit 221 is electrically connected to the plurality of high-voltage power-side RC-IGBTs 321 (for example, one high-voltage drive integrated circuit 221 is electrically connected to three high-voltage power-side RC-IGBTs 331). In this way, the layout of the power module can be more reasonable, and the distribution of leads between the drive integrated circuit and the RC-IGBT can be more balanced.

[0139] Further, in some embodiments, the power module further includes a bootstrap chip 251 arranged on the drive-side pin 24, wherein the drive-side pin 24 further includes a floating supply voltage pin 241 arranged on a side of the high-voltage drive-side pad 22 away from the heat dissipation substrate 30 in the width direction, the floating supply voltage pin 241 has a bootstrap chip pad 25, and the bootstrap chip 251 is arranged on the bootstrap chip pad 25. Optionally, three high-voltage power sides can correspond to three bootstrap chips (for example, a circuit including a bootstrap diode), the bootstrap chip can function as power supply isolation, improve driving voltage, and realize automatic gain control, and by arranging the bootstrap chip on the drive-side pin, the circuit layout and wiring can be optimized, which is beneficial to the miniaturization of the power module.

[0140] In some embodiments, the drive side pin 24 further comprises a chip supply voltage pin 243, which is arranged in length direction and in width direction between the high-voltage drive side pad 22 and the floating supply voltage pin 241, the bootstrap chip 251 is electrically connected with the chip supply voltage pin 243, and the floating supply voltage pin 241 is electrically connected with the high-voltage drive integrated circuit 221. The chip supply voltage pin 243 is used to connect with the power supply voltage Vcc to supply power for the chip.

[0141] In other embodiments, the bootstrap chip can also be integrated in the high-voltage drive integrated circuit, and then the drive side pin 24 is implemented as a structure comprising the following electrical connection relationship, for example, the drive side pin 24 comprises a floating supply voltage pin 241 and a chip supply voltage pin 243, the floating supply voltage pin 241 is arranged in width direction away from the heat dissipation substrate 30 on one side of the high-voltage drive side pad 22; the chip supply voltage pin 243 is arranged in length direction and in width direction between the high-voltage drive side pad 22 and the floating supply voltage pin 241, the high-voltage drive integrated circuit 221 is electrically connected with the chip supply voltage pin 243, and the floating supply voltage pin 241 is electrically connected with the high-voltage drive integrated circuit 221. By integrating the bootstrap chip in the high-voltage drive integrated circuit, the circuit design can be simplified, the number of components and connections can be reduced, the space can be saved, the complexity and failure rate of the power module can be reduced, and the miniaturization of the power module is facilitated. It is worth mentioning that, in other embodiments, in order to reduce the space occupied by the drive side pin, the chip supply voltage pin 243 can also not cross other pins in length direction.

[0142] So far, the power module in the embodiments of the present application has been introduced, but it is conceivable that other suitable components can also be provided in addition to the above structure, which is not specifically limited herein.

[0143] In summary, according to the power module in the embodiments of the present application, by using RC-IGBT as a semiconductor switching element, and by packaging a large-current specification (45A≤I≤55A) RC-IGBT in a small packaging resin and reducing the aspect ratio of the RC-IGBT, the problems of stress concentration and uneven high-temperature thermal expansion of the large-current specification (45A≤I≤55A) RC-IGBT are improved while realizing the miniaturization of the power module, the RC-IGBT chip failure probability is significantly reduced, and the reliability of the power module is improved.

[0144] In another aspect of the present application, an electronic device is also provided, which comprises the power module as described above, wherein the electronic device can comprise household appliances such as electric fan, air conditioner, kitchen hood, high-speed air duct, washing machine, etc., and the power module can be used in the motor driving system of the household appliances. The electronic device can also be new energy vehicles, industrial automation equipment, switching power supply, etc.

[0145] Due to the electronic device of the present application having the power module as described above, it also has the advantages of the power module as described above.

[0146] Although example embodiments have been described herein with reference to the accompanying drawings, it is to be understood that the above description is merely exemplary and is not intended to limit the scope of the present application. Those of ordinary skill in the art can make various changes and modifications without departing from the scope and spirit of the present application. All such changes and modifications are intended to be included within the scope of the present application as claimed in the appended claims.

[0147] In the specification provided herein, a large number of specific details are described. However, it can be understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not described in detail in order not to obscure the understanding of the present specification.

[0148] Similarly, it is to be understood that, in order to simplify the present application and to help understand one or more of the individual inventive aspects, various features of the present application are sometimes grouped together in a single embodiment, figure or description of the embodiments. However, this method of the present application should not be interpreted as reflecting an intention that the claimed application requires more features than those explicitly recited in each claim. Rather, as reflected by the corresponding claims, the inventive point is that the corresponding technical problem can be solved with fewer features than all the features of a certain disclosed single embodiment. Therefore, the claims following the specific embodiments are hereby expressly incorporated into the specific embodiments, wherein each claim itself is a separate embodiment of the present application.

[0149] Those skilled in the art can understand that, except for the mutual exclusivity between features, all features disclosed in the specification (including the accompanying claims, abstract and drawings) and all processes or units of any method or device disclosed thereby can be combined in any combination. Unless explicitly stated otherwise, each feature disclosed in the specification (including the accompanying claims, abstract and drawings) can be replaced by an alternative feature that provides the same, equivalent or similar purpose.

[0150] Furthermore, those skilled in the art will recognize that, in the practice of the embodiments disclosed herein, functional equivalents to certain items described herein can be employed without departing from the scope of the application as defined by the appended claims. For example, in the claims, any of the claimed embodiments can be used in any combination.

[0151] It is to be understood that the above-referenced examples do not limit the application in scope to the specific embodiments described in this document, but describe embodiments that, together with the claims, define the scope of the application. Other embodiments can be employed without departing from the scope of the application as defined by the appended claims.

Claims

1. A power module (100), comprising: RC-IGBT; a driver integrated circuit, the driver integrated circuit being electrically connected to the RC-IGBT; A heat dissipation substrate (30), the heat dissipation substrate (30) having a first surface and a second surface arranged opposite to each other, wherein the RC-IGBT is arranged on the first surface of the heat dissipation substrate (30); A packaging resin (10) packages the RC-IGBT, the heat dissipation substrate (30) and the driver integrated circuit, wherein at least a portion of the second surface of the heat dissipation substrate (30) is exposed from the packaging resin (10), wherein: The aspect ratio of the RC-IGBT is less than or equal to 1.56; The length of the encapsulating resin (10) in the longitudinal direction is less than or equal to 40 mm; The width of the encapsulating resin (10) in the width direction is less than or equal to 26 mm; and The rated current of the RC-IGBT is defined as I, where I satisfies the relationship: 45A≤I≤55A.

2. The power module according to claim 1, wherein: The aspect ratio of the RC-IGBT is also greater than 1.

1.

3. The power module according to claim 1, wherein: The length of the encapsulating resin (10) in the longitudinal direction is also greater than or equal to 36 mm; and The width of the encapsulating resin (10) in the width direction is also greater than or equal to 22 mm.

4. The power module according to claim 1, wherein: The area of ​​the heat dissipation substrate (30) is set to S, and S satisfies the relationship: 350mm 2 ≤S≤550mm 2 .

5. The power module according to claim 1, wherein: The width of the RC-IGBT is greater than or equal to 2.4 mm and less than or equal to 4.6 mm.

6. The power module according to claim 1, wherein: The first surface side of the heat dissipation substrate (30) has a power side pad (31), and the RC-IGBT is arranged on the power side pad (31).

7. The power module according to claim 6, characterized in that: The heat dissipation substrate (30) comprises: an insulating layer, the insulating layer having a first surface and a second surface opposite to the first surface, wherein the insulating layer is at least one of an aluminum nitride ceramic layer or a silicon nitride ceramic layer; a conductive layer, disposed at least on the first surface of the insulating layer, wherein the conductive layer comprises: a first conductive layer disposed on the first surface, or a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed on the first surface and the second conductive layer is disposed on the second surface, The surface of the first conductive layer away from the insulating layer constitutes at least a portion of the first surface of the heat dissipation substrate, and the first conductive layer includes the power-side pad (31).

8. The power module according to claim 6, characterized in that: The number of the RC-IGBTs is multiple, the number of the power-side pads (31) is multiple, and the RC-IGBTs are arranged at intervals in the length direction, wherein the multiple RC-IGBTs include at least one high-voltage power-side RC-IGBT (321) and at least one low-voltage power-side RC-IGBT (331), and the high-voltage power-side RC-IGBT (321) and the low-voltage power-side RC-IGBT (331) are respectively arranged on different power-side pads (31).

9. The power module according to claim 8, characterized in that: The number of the low-voltage power side RC-IGBTs (331) is three, the number of the high-voltage power side RC-IGBTs is three, and the power side pad (31) includes: There are three low-voltage power side pads (33), and the three low-voltage power side pads (33) are spaced apart in the length direction; A high-voltage power side pad (32), wherein the high-voltage power side pad (32) is one, and the one high-voltage power side pad (32) and the three low-voltage power side pads (33) are spaced apart in the length direction. The two sides of the encapsulation resin (10) along the length direction are respectively set as a first side (11) and a second side (12). The low-voltage power side pad (33) is closer to the first side (11) in the length direction, and the high-voltage power side pad (32) is closer to the second side (12) in the length direction. The three low-voltage power side RC-IGBTs (331) are respectively arranged on the three low-voltage power side pads (33) in a one-to-one correspondence. The three high-voltage power side RC-IGBTs (321) are all arranged on one high-voltage power side pad (32). The three high-voltage power side RC-IGBTs are spaced apart in the length direction on the high-voltage power side pad (32).

10. The power module according to claim 1, wherein: Also includes: a driving side frame (20), wherein a portion of the driving side frame (20) is wrapped by the packaging resin (10), the driving side frame (20) comprises a driving side pad (21) and a driving side pin (24), the driving integrated circuit is arranged on the driving side pad (21), and the driving integrated circuit is electrically connected to the driving side pin (24), wherein the heat dissipation substrate (30) and the driving side frame (20) are spaced apart in the width direction; or A PCB board is wrapped by the packaging resin (10), the PCB board has a driving side pad, the power module further includes a driving side pin, the driving side pin is electrically connected to the PCB board, the driving integrated circuit is arranged on the driving side pad, the driving integrated circuit is electrically connected to the driving side pin, wherein the heat dissipation substrate (30) and the PCB board are spaced apart in the width direction.

11. The power module according to claim 10, characterized in that: The driving side pad (21) comprises: a low-voltage driving side pad (23), wherein the number of the low-voltage driving side pad (23) is one; A high-voltage driving side pad (22), wherein the high-voltage driving side pad (22) is one, and the high-voltage driving side pad (22) and the low-voltage driving side pad (23) are spaced apart in the length direction. The two sides of the packaging resin (10) along the length direction are respectively set as a first side (11) and a second side (12). The low-voltage driving side pad (23) is closer to the first side (11) in the length direction, and the high-voltage driving side pad (22) is closer to the second side (12) in the length direction. The driver integrated circuit includes a low-voltage driver integrated circuit (231) and a high-voltage driver integrated circuit (221). One low-voltage driver integrated circuit (231) is arranged on one low-voltage driver side pad (23), and one high-voltage driver integrated circuit (221) is arranged on one high-voltage driver side pad (22). When there are multiple RC-IGBTs, and the multiple RC-IGBTs include multiple low-voltage power-side RC-IGBTs and multiple high-voltage power-side RC-IGBTs, one low-voltage driver integrated circuit (231) is electrically connected to each of the multiple low-voltage power-side RC-IGBTs (331), and one high-voltage driver integrated circuit (221) is electrically connected to each of the multiple high-voltage power-side RC-IGBTs (321).

12. The power module according to claim 11, characterized in that: It also includes a bootstrap chip (251), the bootstrap chip (251) being arranged on the driving side pin (24), wherein the driving side pin (24) further includes: A suspended power supply voltage pin (241), the suspended power supply voltage pin (241) being arranged at intervals on a side of the high-voltage drive side pad (22) away from the heat dissipation substrate (30) in the width direction, the suspended power supply voltage pin (241) having a bootstrap chip pad (25), and the bootstrap chip (251) being arranged on the bootstrap chip pad (25); A chip power supply voltage pin (243) is provided, the chip power supply voltage pin (243) extending in the length direction and spaced between the high-voltage drive side pad (22) and the suspension power supply voltage pin (241) in the width direction; the bootstrap chip (251) is electrically connected to the chip power supply voltage pin (243); and the suspension power supply voltage pin (241) is electrically connected to the high-voltage drive integrated circuit (221).

13. The power module according to claim 11, wherein: It also includes a bootstrap chip, which is integrated into the high-voltage driver integrated circuit, wherein the drive side pin (24) also includes: Suspended power supply voltage pins (241), the suspended power supply voltage pins (241) being arranged at intervals on a side of the high-voltage drive side pad (22) away from the heat dissipation substrate (30) in the width direction; A chip power supply voltage pin (243), the high-voltage driver integrated circuit (221) is electrically connected to the chip power supply voltage pin (243), and the suspended power supply voltage pin (241) is electrically connected to the high-voltage driver integrated circuit (221).

14. The power module according to claim 1, wherein: Also includes: Power-side pins (34), part of the power-side pins (34) being wrapped by the packaging resin (10) and located on a side of the heat dissipation substrate (30) away from the driver integrated circuit (20) along the width direction, and the power-side pins (34) being electrically connected to the RC-IGBT; Wherein, each of the RC-IGBTs comprises: a gate pad (35), the gate pad (35) being electrically connected to the driver integrated circuit, An emitter pad (36), wherein a pin electrical connection solder point (361) is provided on the emitter pad (36), a pin electrical connection wire (262) is connected between the pin electrical connection solder point (361) and the power side pin (34), the pin electrical connection solder point (361) is extended in the width direction, a plurality of the pin electrical connection solder points (361) are provided on each of the RC-IGBTs, the plurality of the pin electrical connection solder points (361) on each of the RC-IGBTs are spaced apart in the length direction, a plurality of the pin electrical connection wires (262) are provided between each of the RC-IGBTs and the corresponding power side pin (34), and the plurality of the pin electrical connection wires (262) of each of the RC-IGBTs are connected one-to-one with the plurality of the pin electrical connection solder points (361).

15. The power module according to claim 14, characterized in that: The two sides of the packaging resin (10) along the length direction are respectively a first side (11) and a second side (12), and the pin electrical connection line (262) extends obliquely relative to the pin electrical connection solder joint (361) toward the side close to the first side (11) in the width direction, and an angle α is formed between the pin electrical connection line (262) and the pin electrical connection solder joint (361), and α satisfies the relationship: 120°≤α≤180°.

16. The power module according to claim 15, characterized in that: The length of the pin electrical connection line (262) is L5, and L5 satisfies the relationship: 8mm≤L5≤16mm.

17. The power module according to any one of claims 1 to 16, characterized in that: The RC-IGBT includes a terminal structure, and the terminal structure adopts a lateral variable doping structure.

18. The power module according to any one of claims 1 to 16, characterized in that: An aspect ratio of the RC-IGBT is less than or equal to 1.

488.

19. An electronic device, characterized in that: A power module (100) comprising any one of claims 1-18.

Images