Film forming apparatus

Abstract

The utility model discloses a film forming device, and belongs to the technical field of film forming equipment, and the film forming device comprises a reaction container which is provided with a cavity wall and a reaction cavity located in the cavity wall, the cavity wall comprises an inner top wall and an inner bottom wall which face the reaction cavity and are oppositely arranged, and a side wall which connects the inner top wall and the inner bottom wall; the base is horizontally arranged in the reaction cavity, the base comprises an object carrying surface and a heat conduction surface, and the heat conduction surface is arranged around the object carrying surface; a heating assembly; a cooling assembly; the heat preservation inner wall is arranged around the base; the heat radiation of the heat conduction surface is blocked through the heat preservation inner wall, and due to the characteristics of the heat preservation inner wall, the heat transfer speed from the heat conduction surface to the side wall is slowed down, so that the object carrying surface keeps a stable temperature difference gradient and uniform temperature distribution, and the yield of film layer growth is improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of film forming equipment, and particularly relates to a film forming device. BACKGROUND

[0002] In the field of semiconductor manufacturing, a wafer needs to contact a reaction gas for a growth reaction in a growth process, so that a high-quality film layer is formed on the wafer surface, thereby meeting the requirements of high-performance device manufacturing.

[0003] At present, the heat dissipation speed of the outer peripheral wall of the carrier for carrying the wafer is relatively fast in the reaction process, which may affect the temperature difference gradient of the surface of the carrier carrying the wafer, and thus may easily cause unstable film layer growth. CONTENT OF THE UTILITY MODEL

[0004] The utility model aims at solving the technical problem of unstable film layer growth caused by the fast heat dissipation speed of the outer peripheral wall of the carrier.

[0005] Technical scheme: The film forming device provided in the embodiments of the application comprises:

[0006] a reaction container having a cavity wall and a reaction cavity in the cavity wall, the cavity wall comprising an inner top wall and an inner bottom wall facing the reaction cavity and oppositely arranged, and a side wall connecting the inner top wall and the inner bottom wall;

[0007] a susceptor horizontally arranged in the reaction cavity, the susceptor comprising a wafer carrying surface and a heat conducting surface, the wafer carrying surface horizontally extending, the heat conducting surface being configured as an end surface of the susceptor in the horizontal direction, and the heat conducting surface being arranged around the wafer carrying surface;

[0008] a heating assembly for heating the susceptor;

[0009] a cooling assembly for cooling the side wall;

[0010] a heat preservation inner wall arranged around the susceptor, in the horizontal direction, the heat conducting surface and the side wall being arranged with the heat preservation inner wall in between, and in the vertical direction, the susceptor and the inner top wall or the inner bottom wall being arranged without the heat preservation inner wall in between.

[0011] In some embodiments, the susceptor is arranged in a disc shape, the reaction container is provided with a gas inlet assembly and a gas outlet communicating with the reaction cavity, the gas inlet assembly is arranged on the inner top wall and protrudes into the reaction cavity, and in the vertical direction, the gas inlet assembly is arranged opposite to the center of the susceptor.

[0012] The gas outlet is arranged on the inner bottom wall, and in the vertical direction, the gas outlet is located outside the projection edge of the susceptor on the inner bottom wall.

[0013] In some embodiments, the film forming device further comprises a partition plate arranged in the reaction cavity and surrounding the heat conduction surface, and the heat preservation inner wall and the partition plate are spaced to form an exhaust passage, and the gas outlet is communicated with the gas inlet assembly through the exhaust passage.

[0014] In some embodiments, the heat preservation inner wall and the side wall are spaced to form an exhaust passage, and the gas outlet is communicated with the gas inlet assembly through the exhaust passage.

[0015] In some embodiments, the heat preservation inner wall comprises a first heat preservation layer and a second heat preservation layer, the first heat preservation layer is internally provided with a containing cavity, and the second heat preservation layer is arranged in the interior of the first heat preservation layer, and the first heat preservation layer comprises a plurality of sub-parts which are sequentially and fitly jointed to form the containing cavity.

[0016] In some embodiments, the heat preservation inner wall comprises a first heat preservation layer and a second heat preservation layer.

[0017] The first heat preservation layer is attached to the side wall and surrounds the side wall to form a containing cavity, and the second heat preservation layer is arranged in the containing cavity.

[0018] In some embodiments, the heat preservation inner wall comprises a plurality of sub-walls which are jointedly arranged along the inner periphery of the side wall.

[0019] In some embodiments, the second heat preservation layer is made of one of carbon fiber felt, graphite felt and graphite composite heat preservation plate.

[0020] In some embodiments, the heating assembly is arranged between the inner bottom wall and the base, and the heat preservation inner wall surrounds the heating assembly.

[0021] In some embodiments, the reaction container comprises a shell and a top cover, the shell comprises the side wall and the inner bottom wall.

[0022] The top cover is arranged on the shell, the top cover comprises the inner top wall, and the side wall, the inner bottom wall and the top cover are internally provided with cooling flow channels, and the cooling assembly provides cooling medium to the cooling flow channels.

[0023] Beneficial effects: the film forming device of the embodiments of the present application blocks the heat radiation of the heat conduction surface by the heat preservation inner wall. Due to the characteristics of the heat preservation inner wall, the heat transfer speed from the heat conduction surface to the side wall is slowed down, the heat dissipation degree of the base along the outer peripheral side is low, and the heat dissipation degree of the object supporting surface of the base is not affected. The base has uniform temperature distribution in the radial direction, maintains stable temperature difference gradient and uniform temperature distribution above the object supporting surface, improves the yield of film layer growth, and reduces the yield of by-products. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced. Obviously, the drawings in the following description only represent some of the embodiments of the present application, and all other drawings obtained by those skilled in the art without creative effort based on these drawings also belong to the protection scope of the present application.

[0025] Figure 1 A schematic diagram of a film forming device provided by the embodiments of the present application is shown in the figure.

[0026] Figure 2 A schematic diagram of a susceptor provided by the embodiments of the present application is shown in the figure.

[0027] Figure 3 A schematic diagram of a film forming device provided by the embodiments of the present application is shown in the figure.

[0028] Figure 4 A schematic diagram of another relative position of the heat preservation inner wall and the exhaust passage provided by the embodiments of the present application is shown in the figure.

[0029] Figure 5 A schematic diagram of the structure of the heat preservation inner wall provided by the embodiments of the present application is shown in the figure.

[0030] Figure 6 A schematic diagram of the structure of the first heat preservation layer provided by the embodiments of the present application is shown in the figure.

[0031] The figure shows the following: 1, reaction container; 10, reaction cavity; 11, shell; 111, inner bottom wall; 112, side wall; 113, gas outlet; 12, top cover; 121, gas inlet assembly; 122, inner top wall; 2, susceptor; 21, object supporting surface; 22, heat conducting surface; 3, heat preservation inner wall; 31, first heat preservation layer; 311, accommodating cavity; 312, sub part; 32, second heat preservation layer; 4, exhaust passage; 5, exhaust grid; 51, exhaust hole; 6, partition plate; 7, cooling assembly; 8, heating assembly. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present application will be described clearly and completely in the following with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments only represent some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative effort also belong to the protection scope of the present application.

[0033] In the description of the present application, it should be understood that the terms "height", "thickness", "upper", "lower", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application. In the description of the present application, the meaning of "a plurality of" is two or more, and at least one refers to one, two or more, unless otherwise explicitly specified.

[0034] Please refer to Figure 1 and Figure 2 The film forming device of the embodiment of the present application comprises a reaction container 1, a susceptor 2, a heating assembly 8, a cooling assembly and a heat preservation inner wall 3. The reaction container 1 has a cavity wall and a reaction cavity 10 located in the cavity wall. The cavity wall comprises an inner top wall 122, an inner bottom wall 111 and a side wall 112, wherein the inner top wall 122 and the inner bottom wall 111 face the reaction cavity 10 and are oppositely arranged with respect to the reaction cavity 10, and the side wall 112 connects the inner top wall 122 and the inner bottom wall 111.

[0035] The susceptor 2 is horizontally arranged in the reaction cavity 10. The susceptor 2 comprises a wafer loading surface 21 and a heat conduction surface 22. The wafer loading surface 21 extends in the horizontal direction and is used to carry the wafer. The heat conduction surface 22 is arranged as an end surface of the susceptor 2 in the horizontal direction and surrounds the wafer loading surface 21.

[0036] The heating assembly 8 is used to heat the susceptor 2, so that the temperature required for the reaction is reached in the containing cavity 311, and the susceptor 2 and the wafer carried on the susceptor 2 are heated. The cooling assembly (not shown in the figure) is used to cool the side wall 112, so as to reduce the deposition and adhesion on the side wall 112, make the temperature distribution more uniform, and also enable the position corresponding to the side wall 112 outside the reaction container 1 to be maintained within the temperature range that can be touched by personnel, thereby increasing the safety of the equipment.

[0037] The heat preservation inner wall 3 surrounds the susceptor 2. In the horizontal direction, the heat conduction surface 22 and the side wall 112 are arranged with the heat preservation inner wall 3 therebetween, that is, the inner wall is arranged between the heat conduction surface 22 and the side wall 112. In the vertical direction, the susceptor 2 is not arranged with the heat preservation inner wall 3 between the inner top wall 122 and the inner bottom wall 111, that is, the heat preservation inner wall 3 only extends in the vertical direction, and the edge of the vertical projection of the heat preservation inner wall 3 is located outside the susceptor 2.

[0038] After the base 2 is heated, the heat transfer of the object supporting surface 21 and the heat conducting surface 22 is mainly in the form of heat radiation. At the same time, the heat of the heat conducting surface 22 is transferred to the side wall 112 because the temperature of the side wall 112 is lower than that of the base 2. The heat insulation inner wall 3 has low thermal conductivity and high heat insulation performance, and is arranged outside the heat conducting surface 22 to block the heat radiation of the heat conducting surface 22, thereby slowing down the heat dissipation speed of the heat conducting surface 22, preventing the heat conducting surface 22 from dissipating a large amount of heat, and reducing the temperature difference between the edge position and the middle position of the object supporting surface 21, thereby improving the uniformity of the in-plane temperature distribution of the object supporting surface 21 and the uniformity of the growth of the film layers in different areas.

[0039] Please combine Figure 1 and Figure 2 In some embodiments, the base 2 is disc-shaped, and the reaction container 1 is provided with a gas inlet assembly 121 and a gas outlet 113 communicating with the reaction cavity 10. The gas inlet assembly 121 is arranged on the inner top wall 122 and protrudes into the reaction cavity 10. The gas inlet assembly 121 is used to communicate with a gas source to introduce a reaction gas, such as a metal organic compound gas, into the reaction cavity 10. In the up-down direction, the gas inlet assembly 121 is arranged opposite to the center of the base 2. Since the base 2 is disc-shaped, the center can be understood as the center of the base 2 or the axis. When the reaction gas enters the reaction cavity 10, the reaction gas can be directly guided to the vicinity of the wafer surface to facilitate the surface reaction.

[0040] The gas outlet 113 is arranged on the inner bottom wall 111, and in the up-down direction, the gas outlet 113 is located outside the orthographic projection edge of the base 2 on the inner bottom wall 111. The reacted gas is dispersed from the periphery of the object supporting surface 21 and then discharged through the gas outlet 113. By arranging the gas outlet 113 away from the base 2, the flow of the gas formed between the gas inlet assembly 121 and the gas outlet 113 is away from the base 2, which can reduce the accumulation of waste gas or byproduct around the base 2 and reduce the possibility of interference with the film growth process.

[0041] Please combine Figure 1 , Figure 3 and Figure 4 In some embodiments, the film forming device further comprises a partition plate 6 arranged in the reaction cavity 10 and surrounding the heat conducting surface 22. The heat insulation inner wall 3 and the partition plate 6 are spaced apart to form an exhaust passage 4. The gas outlet 113 communicates with the space above the base 2 through the exhaust passage 4, and then communicates with the gas inlet assembly 121. The partition plate 6 has an annular structure, and there is a gap between the inner circumferential surface of the partition plate 6 and the heat conducting surface 22. The upper end surface of the partition plate 6 is flush with the object supporting surface 21 or has a small height difference. The partition plate 6 relatively closes the space below the base 2, so that the gas dispersed from the object supporting surface 21 is discharged through the exhaust passage 4 and the gas outlet 113, reducing the inflow of waste gas into the space below the base 2.

[0042] In the embodiment, the heat preservation inner wall 3 is attached to the side wall 112. In other embodiments, the heat preservation inner wall 3 is attached to the outer peripheral wall of the partition plate 6, and the heat preservation inner wall 3 is spaced apart from the side wall 112 to form the exhaust passage 4. Alternatively, the heat preservation inner wall 3 can be spaced apart from the side wall 112, and the space between the heat preservation inner wall 3 and the side wall 112 can be filled with heat insulation material to further increase the heat preservation performance, or the space between the heat preservation inner wall 3 and the side wall 112 can be filled with gas to form a heat insulation layer of two different mediums.

[0043] In some embodiments, the film forming device further comprises a driving assembly and a rotating shaft. One end of the rotating shaft extends into the reaction cavity 10 and is coaxially connected to the bottom surface of the susceptor 2. The other end of the rotating shaft is connected to the driving end of the driving assembly. The driving assembly drives the rotating shaft to rotate the susceptor 2, thereby increasing the uniformity of the heating of the susceptor 2. The driving assembly can be a servo motor, a stepper motor, or the like. This is a conventional technical means in the field, and thus will not be described here.

[0044] Please refer to Figure 1 and Figure 4 In some embodiments, the heat preservation inner wall 3 is spaced apart from the side wall 112 to form the exhaust passage 4, and the gas outlet 113 is connected to the air inlet assembly 121 through the exhaust passage 4. The heat preservation inner wall 3 is close to the heat conduction surface 22, and the distance between the heat preservation inner wall 3 and the heat conduction surface 22 is reduced, thereby enhancing the blocking effect of the heat preservation inner wall 3 and reducing the influence range of the heat radiation of the heat conduction surface 22.

[0045] Please refer to Figure 1 In some embodiments, the heat preservation inner wall 3 comprises a first heat preservation layer 31 and a second heat preservation layer 32. The second heat preservation layer 32 is arranged on the side of the first heat preservation layer 31 facing the side wall 112. The two layers of heat preservation layers can ensure the heat preservation effect on the side wall 112. In the embodiment, the first heat preservation layer 31 can be made of quartz, and the second heat preservation layer 32 can be made of carbon felt, graphite felt, or graphite composite heat preservation plate. Meanwhile, the second heat preservation layer 32 also has the property of generating electricity, and can generate a certain amount of heat through induction heating under the action of the heating assembly 8, thereby further reducing the temperature difference of the susceptor 2 in the radial direction. In other embodiments, the first heat preservation layer 31 can be made of carbon felt, graphite felt, or graphite composite heat preservation plate, and the second heat preservation layer 32 can be made of quartz. Alternatively, the first heat preservation layer 31 and the second heat preservation layer 32 can be made of quartz, carbon felt, graphite felt, or graphite composite heat preservation plate.

[0046] Please refer to Figure 1 and Figure 6In some embodiments, the heat preservation inner wall 3 comprises a first heat preservation layer 31 and a second heat preservation layer 32, the first heat preservation layer 31 is internally provided with a containing cavity 311, and the second heat preservation layer 32 is arranged inside the first heat preservation layer 31. The first heat preservation layer 31 comprises a plurality of sub parts 312 which are sequentially spliced and matched to form the containing cavity 311. The containing cavity 311 plays a protective role on the second heat preservation layer 32. In the embodiment, the first heat preservation layer 31 is made of quartz material, and the second heat preservation layer 32 can be made of one of carbon felt, graphite felt or graphite composite heat preservation plate. Since the second heat preservation layer 32 is enclosed by the first heat preservation layer 31 and the side wall 112, the possibility of some fine particles emitted by the second heat preservation layer 32 when heated is reduced.

[0047] For reference Figure 1 In some embodiments, the heat preservation inner wall 3 comprises a first heat preservation layer 31 and a second heat preservation layer 32, the first heat preservation layer 31 is internally provided with a containing cavity 311, and the second heat preservation layer 32 is arranged inside the first heat preservation layer 31. The first heat preservation layer 31 comprises a plurality of sub parts 312 which are sequentially spliced and matched to form the containing cavity 311. The containing cavity 311 plays a protective role on the second heat preservation layer 32. In the embodiment, the first heat preservation layer 31 is made of quartz material, and the second heat preservation layer 32 can be made of one of carbon felt, graphite felt or graphite composite heat preservation plate. Since the second heat preservation layer 32 is enclosed by the first heat preservation layer 31 and the side wall 112, the possibility of some fine particles emitted by the second heat preservation layer 32 when heated is reduced.

[0048] For reference Figure 5 In some embodiments, the heat preservation inner wall 3 comprises a plurality of sub walls which are arranged along the inner periphery of the side wall 112. The heat preservation inner wall 3 is designed in a multi-segment splicing manner, which can not only improve the fitting degree of the heat preservation inner wall 3 and the inner contour of the side wall 112 to maintain stable heat preservation effect, but also can be replaced individually, with high flexibility.

[0049] For reference Figure 1 In some embodiments, the first heat preservation layer 31 and the second heat preservation layer 32 completely cover the side wall 112. Since the second heat preservation layer 32 is wrapped by the first heat preservation layer 31, the part of the first heat preservation layer 31 towards the side wall 112 is occupied by the second heat preservation layer 32. Therefore, in the up-down direction, the height of at least the first heat preservation layer 31 is not less than the height of the side wall 112. The faces of the first heat preservation layer 31 and the second heat preservation layer 32 towards the side wall 112 jointly cover the side wall 112, so as to avoid the side wall 112 directly affected by the heat radiation of the heat conduction surface 22, and stabilize the heat transfer speed of the heat conduction surface 22.

[0050] For reference Figure 1 In some embodiments, the heating assembly 8 is arranged between the inner bottom wall 111 and the base 2, and the heat preservation inner wall 3 surrounds the heating assembly 8. The inner bottom wall 111, the heating assembly 8 and the base 2 are arranged in sequence from bottom to top, fully utilizing the space of the reaction container 1 in the up-down direction, and at the same time, the heat preservation inner wall 3 surrounds the heating assembly 8, which can gather heat to the base 2, reduce the heat absorbed or dissipated by the surrounding environment, and thus improve the heating efficiency.

[0051] Referring to Figure 1 In some embodiments, the reaction container 1 comprises a shell 11 and a top cover 12, the shell 11 comprises a side wall 112 and an inner bottom wall 111, the top cover 12 covers the shell 11 to seal the opening of the shell 11, the top cover 12 comprises an inner top wall 122, the side wall 112, the inner bottom wall 111 and the inner top wall 122 are internally provided with cooling flow channels 7, and the cooling assembly provides cooling medium to the cooling flow channels 7. When the top cover 12 covers the shell 11, the inner bottom wall 111, the side wall 112 and the inner top wall 122 are closed to form the reaction cavity 10, and the top cover 12 and the shell 11 form a split design, which is convenient for taking and placing the wafer.

[0052] Referring to Figure 1 and Figure 3 In some embodiments, the film forming device further comprises an exhaust grid 5, the exhaust grid 5 is arranged between the heat preservation inner wall 3 and the heat conduction surface 22, the exhaust grid 5 is provided with a plurality of exhaust holes 51, the plurality of exhaust holes 51 are arranged in the circumferential direction, and each exhaust hole 51 is communicated with the exhaust channel 4. The connection between the exhaust grid 5 and the heat conduction surface 22 can be direct connection or indirect connection. In the embodiment, the outer circumferential surface of the exhaust grid 5 is connected with the heat preservation inner wall 3, and the inner circumferential surface of the exhaust grid 5 is connected with the partition plate 6, so as to form the spacing between the partition plate 6 and the heat preservation inner wall 3. At this time, the exhaust grid 5 is indirectly connected with the heat conduction surface 22 through the partition plate 6.

[0053] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0054] The film forming device provided by the embodiments of the present application is described in detail above, and the principles and implementation manners of the present application are described by using specific examples. The above description of the embodiments is only used to help understand the technical solutions and core ideas of the present application; those skilled in the art should understand that the technical solutions recorded in the above embodiments can be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A film forming apparatus characterized by comprising: The film forming device comprises: a reaction container (1) having a cavity wall and a reaction cavity (10) in the cavity wall, the cavity wall comprising an inner top wall (122) and an inner bottom wall (111) facing the reaction cavity (10) and oppositely arranged, and a side wall (112) connecting the inner top wall (122) and the inner bottom wall (111); a base (2) horizontally arranged in the reaction cavity (10), the base (2) comprising a loading surface (21) and a heat-conducting surface (22), the loading surface (21) extending horizontally, and the heat-conducting surface (22) being an end surface of the base (2) in the horizontal direction, the heat-conducting surface (22) being arranged around the loading surface (21); a heating assembly (8) for heating the base (2); a cooling assembly for cooling the side wall (112); a heat-insulating inner wall (3) arranged around the base (2), in the horizontal direction, the heat-conducting surface (22) and the side wall (112) being arranged with the heat-insulating inner wall (3) in between, and in the vertical direction, the base (2) and the inner top wall (122) or the inner bottom wall (111) are arranged without the heat-insulating inner wall (3) in between.

2. The film forming apparatus according to claim 1, wherein The base (2) is arranged in a disc shape, the reaction container (1) is provided with a gas inlet assembly (121) and a gas outlet (113) communicating with the reaction cavity (10), the gas inlet assembly (121) is arranged on the inner top wall (122) and protrudes into the reaction cavity (10), in the vertical direction, the gas inlet assembly (121) is arranged opposite to the center of the base (2); the gas outlet (113) is arranged on the inner bottom wall (111), in the vertical direction, the gas outlet (113) is located outside the projection edge of the base (2) on the inner bottom wall (111).

3. The film forming apparatus according to claim 2, wherein The film forming device further comprises a partition plate (6), the partition plate (6) is arranged in the reaction cavity (10) and arranged around the heat-conducting surface (22), the heat-insulating inner wall (3) and the partition plate (6) are spaced to form an exhaust passage (4), and the gas outlet (113) communicates with the gas inlet assembly (121) through the exhaust passage (4).

4. The film forming apparatus according to claim 2, wherein The heat-insulating inner wall (3) and the side wall (112) are spaced to form an exhaust passage (4), and the gas outlet (113) communicates with the gas inlet assembly (121) through the exhaust passage (4).

5. The film forming apparatus according to claim 3 or 4, characterized by The heat-insulating inner wall (3) comprises a first heat-insulating layer (31) and a second heat-insulating layer (32), the first heat-insulating layer (31) has an accommodating cavity (311) inside, the second heat-insulating layer (32) is arranged inside the first heat-insulating layer (31), and the first heat-insulating layer (31) comprises a plurality of sub-parts (312), and the plurality of sub-parts (312) are sequentially spliced to form the accommodating cavity (311).

6. The film forming apparatus according to claim 3, wherein The heat-insulating inner wall (3) comprises a first heat-insulating layer (31) and a second heat-insulating layer (32); The first heat-insulating layer (31) is attached to the side wall (112) and forms an accommodating cavity around the side wall (112), and the second heat-insulating layer (32) is arranged in the accommodating cavity (311).

7. The film forming apparatus according to claim 1, wherein The heat preservation inner wall comprises a plurality of sub-walls which are arranged in splicing along the inner periphery of the side wall.

8. The film forming apparatus according to claim 5, wherein The second heat preservation layer (32) is made of carbon fiber felt, graphite felt or graphite composite heat preservation plate.

9. The film forming apparatus according to claim 1, wherein The heating assembly (8) is arranged between the inner bottom wall (111) and the base (2), and the heat preservation inner wall (3) surrounds the heating assembly (8).

10. The film forming apparatus according to claim 1, wherein The reaction container (1) comprises a shell (11) and a top cover (12), the shell (11) comprises the side wall (112) and the inner bottom wall (111); The top cover (12) is arranged on the shell (11), the top cover (12) comprises the inner top wall (122), and the side wall (112), the inner bottom wall (111) and the top cover (12) are internally provided with cooling flow channels (7), and the cooling assembly provides cooling medium to the cooling flow channels (7).

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