Spraying structure and coating equipment

Abstract

The utility model provides a spraying structure and coating equipment, relates to the field of semiconductor equipment, and solves the technical problems that the cleaning effect of the periphery of a carrying table in a process chamber is poor, overall cleaning is not uniform enough, and the replacement period is short when the spraying structure is damaged. The spraying structure is applied to the coating equipment, the coating equipment comprises a process cavity and at least one first gas inlet pipe, the process cavity is provided with a process chamber, the at least one first gas inlet pipe extends to the position above the process chamber, and the first gas inlet pipe is configured to convey clean gas to the process chamber; the spraying structure comprises a main body, the distance between the side wall of the upper portion of the main body and the center line of the main body in the first direction is gradually increased from top to bottom, and the side wall of the upper portion of the main body is located below a first air inlet pipe, so that a first part of cleaning air sprayed out of the first air inlet pipe can be sprayed out of the main body after colliding with the side wall of the upper portion of the main body. And the water can be guided to the top of the process chamber by the side wall of the upper part of the main body, so that the top of the process chamber is cleaned.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor equipment, and in particular to a spraying structure and a coating equipment. BACKGROUND

[0002] High Density Plasma Chemical Vapor Deposition (HDPCVD or HDP for short) is an important part of integrated circuit production, mainly used for high aspect ratio trench filling and high density film deposition. A cleaning process must be performed between two or more deposition processes to clean the dielectric deposits deposited on other parts of the chamber, mainly silicon dioxide, to prevent them from falling onto the wafer and forming defects.

[0003] Currently, the traditional HDP equipment uses a remote plasma source (RPS) assembly to dissociate the fluorine-containing precursor sent into it to form fluorine radicals, which are then introduced into the chamber of the chamber to clean the dielectric deposits at various positions in the chamber, and oxygen is introduced into the chamber to clean it. Specifically, a gas inlet pipe is usually provided at the top of the chamber, and cleaning gases such as fluorine radicals and oxygen are introduced into the chamber through the gas inlet pipe. However, among the cleaning gases sprayed downward by the gas inlet pipe at the top of the chamber, less cleaning gas reaches the top of the chamber, making it difficult to clean the top of the chamber completely.

[0004] In addition, the cleaning gas of the carrier is less, and it is difficult to effectively clean the peripheral area of the carrier quickly. In addition, due to the large-area contact and recombination of fluorine radicals, nitrogen radicals and fluorine-nitrogen radicals on the upper surface of the showerhead device, a high-temperature corrosion environment is formed, which causes serious wear on the upper surface of the showerhead, and the particles formed can cause wafer contamination. The maintenance and replacement cycle of the showerhead is too short, which affects the production capacity and increases the maintenance cost. Practical new type content

[0005] In order to solve the above technical problems, the present application is proposed. The embodiments of the present application provide a spraying structure and a coating equipment.

[0006] In a first aspect, an embodiment of the present application provides a spraying structure applied to a coating equipment, the coating equipment comprising a process cavity and at least one first gas inlet pipe, the process cavity having a process chamber, the at least one first gas inlet pipe extending into the upper part of the process chamber, the first gas inlet pipe being configured to deliver a cleaning gas to the process chamber; wherein the spraying structure comprises: a main body extending along a first direction, the distance between the sidewall of the upper part of the main body and the center line of the main body along the first direction gradually increases from top to bottom, and the sidewall of the upper part of the main body is located below the first gas inlet pipe, so that the sidewall of the upper part of the main body can guide a first part of the cleaning gas delivered by the first gas inlet pipe to the top of the process chamber.

[0007] In some embodiments, the main body has at least one first air hole extending along the first direction, the first air hole being capable of allowing a second part of the cleaning gas delivered by the first gas inlet pipe to pass through, so that the second part of the cleaning gas reaches the lower part of the main body.

[0008] In some embodiments, the number of first air holes is multiple, and the multiple first air holes are uniformly arranged in the edge region of the main body.

[0009] In some embodiments, the largest cross section of the main body in the cross section perpendicular to the first direction is a target cross section, the area of the closed figure surrounded by the outer contour of the target cross section is a target area, and the first area of the orthographic projection of the main body on the target cross section is 25%-40% of the target area.

[0010] In some embodiments, the bottom of the main body has a groove; wherein the spraying structure further comprises: a flow guide wing embedded in the groove and at least partially extending into the first air hole, the included angle between at least one sidewall of the flow guide wing and the first direction is an acute angle, and the flow guide wing is configured to guide the second part of the cleaning gas.

[0011] In some embodiments, the largest cross section of the main body in the cross section perpendicular to the first direction is a target cross section, the area of the closed figure surrounded by the outer contour of the target cross section is a target area, and the sum of the first area of the orthographic projection of the main body on the target cross section and the second area of the orthographic projection of the flow guide wing on the target cross section is 50%-70% of the target area.

[0012] In some embodiments, the spraying structure further comprises: a gas guide part arranged around the main body and connected with the main body, the upper surface of the gas guide part being horizontal, so that the upper surface of the gas guide part can guide the first part of the cleaning gas delivered by the first gas inlet pipe to the top of the process chamber.

[0013] In some embodiments, the gas guide part has at least one second air hole extending along the first direction, the second air hole being capable of allowing a third part of the cleaning gas delivered by the first gas inlet pipe to pass through, so that the third part of the cleaning gas reaches the lower part of the gas guide part.

[0014] In some embodiments, the coating equipment further comprises a second gas inlet pipe extending into the upper portion of the process chamber and arranged adjacent to the first gas inlet pipe, the second gas inlet pipe configured to deliver process gas; wherein the main body is connected to the second gas inlet pipe, the main body having a gas channel, a gas inlet opening in communication with the gas channel, and at least one gas outlet opening in communication with the gas channel, the second gas inlet pipe in communication with the gas inlet opening, the gas outlet opening in communication with the process chamber, the gas channel configured to receive the process gas delivered by the second gas inlet pipe through the gas inlet opening and eject the received process gas to the process chamber through the gas outlet opening.

[0015] In some embodiments, the distance between the sidewall of the upper portion of the main body and the center line of the main body along the first direction gradually decreases from top to bottom, the edge region of the lower portion of the main body is surrounded by a plurality of gas outlet openings, the gas outlet openings are located below the inlets of the first vent holes, and the gas outlet openings are directed obliquely downward to enable the process gas to be ejected to the process chamber through the gas outlet openings in an oblique downward direction.

[0016] In a second aspect, an embodiment of the present application provides a coating equipment, comprising: a process chamber; at least one first gas inlet pipe extending into the upper portion of the process chamber, the first gas inlet pipe configured to deliver cleaning gas to the process chamber; the spray structure of any one of the first aspect, the sidewall of the upper portion of the main body of the spray structure being located below the first gas inlet pipe and configured to guide a first portion of the cleaning gas delivered by the first gas inlet pipe to the top of the process chamber; and a carrier arranged below the spray structure and configured to carry a wafer.

[0017] The spray structure and the coating equipment provided by the embodiments of the present application can gradually increase the distance between the sidewall of the upper portion of the main body and the center line of the main body along the first direction from top to bottom, so that the sidewall of the upper portion of the main body is in an inclined state, and thus the first portion of the cleaning gas ejected by the first gas inlet pipe can be guided to the top of the process chamber by the sidewall of the upper portion of the main body after colliding with the sidewall of the upper portion of the main body, so that the top of the process chamber is cleaned thoroughly. Meanwhile, the optimization of the spray structure increases the cleaning gas reaching the surface of the carrier and the outer peripheral region of the carrier, and improves the cleaning efficiency of the region. Furthermore, the optimization of the spray structure reduces the recombination reaction of the fluorine radicals, the nitrogen radicals and the fluorine-nitrogen radicals on the surface of the spray structure, greatly reduces the temperature of the surface of the spray structure during the cleaning process, thereby reducing the corrosion of the spray structure, reducing the generation of particles, improving the service life of the structure, reducing the replacement frequency of the spray structure, and reducing the production cost. BRIEF DESCRIPTION OF DRAWINGS

[0018] The above and other objects, features and advantages of the present application will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings in which:

[0019] Figure 1 Fig. 1 shows a front view of a spray structure according to an example embodiment of the present application.

[0020] Figure 2 Fig. 2 shows a bottom view of the spray structure according to the example embodiment of the present application.

[0021] Figure 3 Fig. 3 shows a schematic view of a coating apparatus according to an example embodiment of the present application.

[0022] Figure 4 Fig. 4 shows a schematic view of a coating apparatus according to another example embodiment of the present application.

[0023] Figure 5 Fig. 5 shows a schematic view of a spray structure and a partial view of the spray structure according to an example embodiment of the present application.

[0024] Figure 6 Fig. 6 shows a front view of a spray structure according to another example embodiment of the present application.

[0025] Figure 7 Fig. 7 shows a bottom view of the spray structure according to the another example embodiment of the present application.

[0026] Figure 8 Fig. 8 shows a front view of a spray structure according to yet another example embodiment of the present application.

[0027] Figure 9 Fig. 9 shows a bottom view of the spray structure according to the yet another example embodiment of the present application.

[0028] Reference Signs:

[0029] 100, spray structure; 110, main body; 111, center line; 112, first air hole; 113, flow guide wing; 114, air inlet; 115, air outlet; 116, upper portion; 117, lower portion; 120, air guide portion; 121, second air hole; 200, coating apparatus; 210, process cavity; 220, first air inlet pipe; 230, carrier; 240, second air inlet pipe; 250, third air inlet pipe. DETAILED DESCRIPTION

[0030] With reference to the drawings and the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0031] Figure 1 Fig. 1 shows a front view of a spraying structure provided by an example embodiment of the present application, Figure 2 Fig. 2 shows a bottom view of the spraying structure provided by the example embodiment of the present application, Figure 3 Fig. 3 shows a structure schematic diagram of a coating equipment along a vertical plane after being cut open, provided by an example embodiment of the present application, Figure 4 Fig. 4 shows a structure schematic diagram of a coating equipment along a vertical plane after being cut open, provided by another example embodiment of the present application.

[0032] As shown in Figures 1-4 An example embodiment of the present application provides a spraying structure 100 applied to a coating equipment 200. The coating equipment 200 includes a process cavity 210 and at least one first gas inlet pipe 220. The process cavity 210 has a process cavity chamber. The at least one first gas inlet pipe 220 extends into the upper part of the process cavity chamber. The first gas inlet pipe 220 is configured to deliver a cleaning gas to the process cavity chamber. The spraying structure 100 includes a main body 110. The main body 110 extends along a first direction (such as the X direction in Figure 1 The distance between the side wall of the upper part 116 of the main body 110 and the center line 111 of the main body 110 along the first direction (such as the distance R1 in Figure 1 The side wall of the upper part 116 of the main body 110 is located below the first gas inlet pipe 220, so that the side wall of the upper part 116 of the main body 110 can guide the first part of the cleaning gas delivered by the first gas inlet pipe 220 to the top of the process cavity chamber.

[0033] For example, the cleaning gas can include an oxygen-containing precursor (such as oxygen) and / or a fluorine-containing precursor (such as fluorine radicals).

[0034] For example, the first direction is a vertical direction.

[0035] For example, Figure 1 The part above the horizontal dashed line in Figure 1 The part below the horizontal dashed line in

[0036] In the above embodiments, by gradually increasing the distance between the side wall of the upper portion 116 of the main body 110 and the center line 111 of the main body 110 in the first direction from top to bottom, the side wall of the upper portion 116 of the main body 110 is in an inclined state, so that the first part of the cleaning gas sprayed by the first gas inlet pipe 220 can be guided to the top of the process chamber by the side wall of the upper portion 116 of the main body 110 after colliding with the side wall of the upper portion 116 of the main body 110, thereby cleaning the top of the process chamber thoroughly.

[0037] To improve production efficiency, equipment manufacturers have adopted various methods to shorten the overall process time. Among them, using RPS with larger dissociation power and passing larger flow of fluorine-containing precursors to shorten the cleaning process time is a commonly used method to improve production efficiency for HDP equipment. As a showerhead directly receiving the flow of fluorine radicals, in order to better cope with higher fluorine radical flow, the material of the showerhead has also changed from the early alumina ceramic to the better anti-fluorine corrosion performance of aluminum nitride ceramic. However, in recent applications, the compression of the cleaning process time has become more and more severe, and it is necessary to use ultra-high flow of fluorine-containing precursors to cooperate with high-power RPS to increase the cleaning rate as much as possible. Under such extreme working conditions, the service life of the shower structure 100 will be greatly shortened. Since the side wall of the upper portion 116 of the main body 110 is in contact with the cleaning gas, the fluorine radicals and the nitrogen radicals of the side wall of the upper portion 116 of the main body 110 will have a recombination exothermic reaction, generating a large amount of heat, causing the main body 110 to heat up, and the aluminum nitride main body 110 is more easily corroded and damaged by fluorine radicals at high temperature, so the shower structure 100 needs to be replaced more frequently. For example, if the cleaning process of passing 4000sccm-8000sccm of fluorine-containing precursors for 150-250 seconds is used, the service life of the shower structure 100 will be greatly shortened, from being replaced every year to being replaced every month during regular maintenance. Further, if the aluminum nitride shower structure 100 is corroded and damaged by fluorine radicals, it will introduce aluminum nitride particles into the process chamber, causing the wafer to be contaminated by aluminum nitride particles, and the cleaning rate of the process chamber is positively correlated with the content of fluorine radicals. If a large amount of fluorine radicals are recombined, the content of fluorine radicals available for cleaning the process chamber will decrease, which will also cause the cleaning rate to decrease, affecting the final production capacity. In addition, due to the blocking of the shower structure 100, the cleaning gas is difficult to reach the stage 230 (i.e., a structure for carrying the wafer to be processed) below the shower structure 100, so it is difficult to clean the stage 230 and the heating plate, air ring and other components around the stage 230. If the cleanliness needs to be ensured, the cleaning time will be inevitably prolonged, further affecting the production capacity.

[0038] To solve the above problems, in some embodiments, as Figure 1 and Figure 2As shown, the main body 110 has at least one first vent hole 112 extending along the first direction, which is capable of allowing the second part of the cleaning gas delivered by the first gas inlet pipe 220 to pass through to the lower part of the main body 110.

[0039] Specifically, after the cleaning gas is sprayed out by the first gas inlet pipe 220, the first part of the cleaning gas moves along the sidewall of the upper part 116 of the main body 110 to the top of the process chamber, and the second part of the cleaning gas passes through the first vent hole 112 to the lower part of the main body 110.

[0040] In the above embodiment, by arranging the first vent hole 112 on the main body 110, first, the surface area of the sidewall of the upper part 116 of the main body 110 can be reduced, that is, the contact area of the cleaning gas with the main body 110 is reduced, so that the recombination between the fluorine radicals, the nitrogen radicals and the fluorine-nitrogen radicals in the cleaning gas can be largely avoided, so that more fluorine radicals can be retained to participate in the cleaning process under the same amount of cleaning gas, thereby improving the efficiency, and at the same time, the heat accumulation of the sidewall of the upper part 116 of the main body 110 can be reduced, thereby improving the service life of the components and saving the cost.

[0041] In some embodiments, as shown in FIG. 1, the first vent hole 112 is arranged on the edge region of the main body 110. Figure 2 As shown, the number of the first vent holes 112 is multiple, and the multiple first vent holes 112 are uniformly arranged around the edge region of the main body 110.

[0042] In the above embodiment, by such a structure, the second part of the cleaning gas can be more uniformly distributed in the lower part of the main body 110, thereby improving the cleaning effect on the components such as the heating disc, the air ring and the like around the main body 110.

[0043] In some embodiments, the cross section of the main body 110 in the direction perpendicular to the first direction has the largest area, the outer contour of the target cross section encloses a closed figure with a target area, and the first area of the orthographic projection of the main body 110 on the target cross section is 25% to 40% of the target area.

[0044] Specifically, the larger the size of the first vent hole 112 in the direction perpendicular to the first direction, the smaller the ratio between the first area and the target area, and by arranging the first vent hole 112 with a larger size in the direction perpendicular to the first direction, the first area can be 25% to 40% of the target area.

[0045] Exemplarily, the first area is 30% of the target area.

[0046] According to the above ratio, the surface area of the outer side of the upper portion 116 of the main body 110 is smaller, the contact area of the cleaning gas with the main body 110 is reduced, so that the recombination between fluorine radicals, nitrogen radicals and fluorine-nitrogen radicals in the cleaning gas can be largely avoided, the heat accumulation on the surface of the upper portion 116 of the main body 110 is reduced, the service life of the component is improved, and the component does not need to be replaced frequently, thereby saving costs. It should be pointed out that the reduction of the surface area of the outer side of the upper portion 116 of the main body 110 will not reduce the amount of cleaning gas that bounces upward through the surface of the outer side of the upper portion 116 of the main body 110, that is, it will not affect the upper part of the cleaning process chamber.

[0047] In the above embodiment, by providing the first air hole 112 with a larger size in the direction perpendicular to the first direction, the surface area of the sidewall of the upper portion 116 of the main body 110 can be greatly reduced, thereby reducing the recombination between fluorine radicals, nitrogen radicals and fluorine-nitrogen radicals in the cleaning gas, improving the cleaning effect, and improving the service life of the spray structure 100, and more second part of the cleaning gas can reach the lower part of the main body 110, thereby cleaning the components such as the heating disc, the air ring and the like around the substrate 230.

[0048] Figure 5 Fig. 1 shows a schematic view of a spray structure and a partial view of the spray structure according to an example embodiment of the present application, Figure 6 Fig. 2 shows a front view of a spray structure according to another example embodiment of the present application, Figure 7 Fig. 3 shows a bottom view of a spray structure according to another example embodiment of the present application.

[0049] In some embodiments, as shown in Figs. 1 to 3, Figure 5 and Figure 7 The bottom of the main body 110 has a groove. The spray structure 100 further comprises a flow guide wing 113. The flow guide wing 113 is embedded in the groove and at least partially extends into the first air hole 112, and the flow guide wing 113 is configured to guide the second part of the cleaning gas.

[0050] For example, the flow guide wing 113 is a multi-turn annular structure connected to each other.

[0051] For example, the bottom of the main body 110 has a plurality of grooves, and when the flow guide wing 113 is installed, the flow guide wing 113 can be pressed upward from the bottom of the main body 110, so that the flow guide wing 113 is partially embedded in the groove and clamped in the groove.

[0052] In the above embodiment, by providing the guide wing 113, the second portion of the cleaning gas can be guided so that the second portion of the cleaning gas can flow to the cleaning dead corner, such as the edge area of ​​the carrier 230, and part of the inner wall of the process chamber 210 (such as Figure 4 Specifically, one situation is that part of the cleaning gas in the second part of the cleaning gas moves obliquely downward and hits the carrier 230, and then moves obliquely upward and hits the inner wall of the process chamber 210 above the carrier 230 (such as Figure 4 The inner wall of the process chamber 210 above the carrier 230 is cleaned by contacting the inner wall of the process chamber 210 in the area A in the process chamber 210.

[0053] In some embodiments, the angle between at least one sidewall of the guide wing 113 and the first direction is an acute angle.

[0054] Exemplarily, the angle between at least one side wall of the guide vane 113 and the first direction is 20 degrees.

[0055] In the above embodiment, by making the angle between at least one side wall of the guide wing 113 and the first direction an acute angle, the second portion of the cleaning gas can be guided obliquely downward.

[0056] In some embodiments, the cross-section with the largest area in the direction perpendicular to the first direction of the main body 110 is the target cross-section, the area of ​​the closed figure enclosed by the outer contour of the target cross-section is the target area, and the sum of the first area of ​​the orthographic projection of the main body 110 on the target cross-section and the second area of ​​the orthographic projection of the guide wing 113 on the target cross-section is 50% to 70% of the target area.

[0057] Specifically, if the size of the first air vent 112 in the direction perpendicular to the first direction is larger and the size of the guide wing 113 in the direction perpendicular to the first direction is smaller, the proportion of the sum of the first area and the second area to the target area will be smaller. By setting the first air vent 112 with a larger size in the direction perpendicular to the first direction and the guide wing 113 with a smaller size in the direction perpendicular to the first direction, the proportion of the sum of the first area and the second area to the target area can be made in the range of 50% to 70%.

[0058] Exemplarily, the sum of the first area and the second area is 60% of the target area.

[0059] In the above embodiment, by arranging the first vent hole 112 with a larger size in the direction perpendicular to the first direction and the flow guide wing 113 with a smaller size in the direction perpendicular to the first direction, the surface area of the sidewall of the upper portion 116 of the main body 110 can be greatly reduced, thereby reducing the recombination of fluorine radicals, nitrogen radicals and fluorine-nitrogen radicals in the cleaning gas, improving the cleaning effect, prolonging the service life of the shower structure 100, and enabling more second part of the cleaning gas to reach the lower portion of the main body 110, thereby cleaning the substrate support 230 and the heating plate, air ring and other components around the substrate support 230.

[0060] Figure 8 Fig. 1 shows a front view of a shower structure provided by another exemplary embodiment of the present application, Figure 9 Fig. 2 shows a bottom view of the shower structure provided by another exemplary embodiment of the present application.

[0061] In some embodiments, as shown in Figures 6-9 The shower structure 100 further comprises a gas guide portion 120. The gas guide portion 120 is arranged around the main body 110 and connected with the main body 110. The upper surface of the gas guide portion 120 is horizontal, so that the upper surface of the gas guide portion 120 can guide the first part of the cleaning gas delivered by the first gas inlet pipe 220 to the top of the process chamber.

[0062] Specifically, among the first part of the cleaning gas sprayed by the first gas inlet pipe 220, part of the first part of the cleaning gas first contacts the sidewall of the upper portion 116 of the main body 110 and continues to move along the extension direction of the sidewall of the upper portion 116 of the main body 110 to contact the gas guide portion 120, and another part of the first part of the cleaning gas directly contacts the gas guide portion 120. The first part of the cleaning gas contacting the gas guide portion 120 can be guided by the gas guide portion 120 to the top of the process chamber.

[0063] In the above embodiment, by arranging the gas guide portion 120, the guiding effect of the shower structure 100 on the first part of the cleaning gas can be improved, and more first part of the cleaning gas can be guided to the top of the process chamber, thereby improving the cleaning effect and efficiency of the top of the process chamber.

[0064] In some embodiments, as shown in Figure 7 and Figure 9 The gas guide portion 120 has at least one second vent hole 121 extending in the first direction, and the second vent hole 121 can enable the third part of the cleaning gas delivered by the first gas inlet pipe 220 to pass through, so that the third part of the cleaning gas reaches the lower portion of the gas guide portion 120.

[0065] Exemplarily, the number of the second vent holes 121 is multiple, and the multiple second vent holes 121 are uniformly arranged around the gas guide portion 120.

[0066] Exemplarily, the material of the gas guide portion 120 is the same as the material of the main body 110, such as the material of the gas guide portion 120 is aluminum nitride ceramic.

[0067] In the above embodiment, by setting the second air hole 121, firstly, the area of the upper surface of the gas guide portion 120 can be reduced, that is, the contact area of the cleaning gas with the gas guide portion 120 is reduced, so that the recombination between fluorine radicals, between nitrogen radicals, and between fluorine and nitrogen radicals in the cleaning gas can be avoided to a large extent, so that more fluorine radicals can be retained to participate in the cleaning process under the same amount of air cleaning gas to improve the efficiency, and at the same time, the heat accumulation of the gas guide portion 120 can be reduced, and the service life of the spraying structure 100 can be improved. In addition, by setting the second air hole 121, a third part of the cleaning gas in contact with the gas guide portion 120 can pass through the second air hole 121, so as to clean the components such as the heating plate, the air ring, and the like around the stage 230.

[0068] In some embodiments, as shown in Figures 2-6 , Figure 8 The coating equipment 200 further comprises a second gas inlet pipe 240. The second gas inlet pipe 240 extends into the upper part of the process chamber and is arranged adjacent to the first gas inlet pipe 220. The second gas inlet pipe 240 is configured to deliver process gas. The main body 110 is connected to the second gas inlet pipe 240. The main body 110 has a gas passage, a gas inlet port 114 in communication with the gas passage, and at least one gas outlet port 115 in communication with the gas passage. The second gas inlet pipe 240 is in communication with the gas inlet port 114, and the gas outlet port 115 is in communication with the process chamber. The gas passage is configured to receive the process gas delivered by the second gas inlet pipe 240 through the gas inlet port 114, and to spray the received process gas out of the process chamber through the gas outlet port 115.

[0069] In the above embodiment, by such a structure, the spraying structure 100 can guide the cleaning gas, and in addition, the process gas can also be guided. By adjusting the position and orientation of the gas outlet port 115, the distribution of the process gas in the process chamber can be adjusted.

[0070] In some embodiments, as shown in Figure 1 The distance between the side wall of the lower part 117 of the main body 110 and the center line 111 of the main body 110 in the first direction (as shown by R2 in Figure 1 The edge region of the lower part 117 of the main body 110 is surrounded by a plurality of gas outlet ports 115. The gas outlet ports 115 are located below the inlets of the first air holes 112, and the gas outlet ports 115 are oriented obliquely downward, so that the process gas can be sprayed out of the process chamber through the gas outlet ports 115 along the obliquely downward direction.

[0071] Exemplarily, the plurality of gas outlets 115 are staggered with the outlets of the plurality of first vent holes 112.

[0072] In the above embodiments, by locating the gas outlets 115 below the inlets of the first vent holes 112, and by directing the gas outlets 115 obliquely downward, it is difficult for the process gas sprayed from the gas outlets 115 to enter the first vent holes 112, so as to avoid the process gas from entering the process chamber in the wrong direction. By surrounding the plurality of gas outlets 115, the uniformity of the process gas can be improved, so as to uniformly coat the wafer.

[0073] Based on the same concept, as shown in Figure 3 and Figure 4 , the present application also provides a coating equipment 200, which comprises a process chamber 210, at least one first gas inlet pipe 220, the spray structure 100 in the above embodiments, and a wafer carrier 230. The process chamber 210 has a process chamber. The first gas inlet pipe 220 extends into the upper part of the process chamber, and the first gas inlet pipe 220 is configured to deliver cleaning gas to the process chamber. The side wall of the upper part 116 of the main body 110 of the spray structure 100 is located below the first gas inlet pipe 220, and is configured to guide a first part of the cleaning gas delivered by the first gas inlet pipe 220 to the top of the process chamber. The wafer carrier 230 is arranged below the spray structure 100, and is configured to carry a wafer.

[0074] In some embodiments, the coating equipment 200 further comprises a heating disc and / or a gas ring. The heating disc and / or the gas ring are arranged adjacent to the wafer carrier 230.

[0075] In some embodiments, as shown in Figure 3 and Figure 4 , the coating equipment 200 further comprises at least one third gas inlet pipe 250. The third gas inlet pipe 250 extends obliquely upward to the wafer carrier 230 and obliquely downward to the first gas inlet pipe 220, and is configured to deliver process gas.

[0076] The basic principles of the present application are described above in combination with specific embodiments, but it should be pointed out that the advantages, advantages, effects and the like mentioned in the present application are only examples and not limitations, and these advantages, advantages, effects and the like cannot be considered as the must-have of each embodiment of the present application. In addition, the above-mentioned specific details are only for the purpose of example and for the purpose of understanding, and are not limited to the above-mentioned specific details. The above-mentioned details do not limit the present application to the above-mentioned specific details.

[0077] The block diagrams of the devices, apparatuses, equipment, systems referred to in this application are only illustrative examples and are not intended to require or imply that the connection, arrangement, configuration must be as shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment, systems can be connected, arranged, configured in any manner. Words such as "include", "comprise", "have", etc. are open-ended words that are to be interpreted in the context where they are used. They are not meant to be limiting. The word "or" as used in this document is intended to mean "and / or" unless otherwise indicated. The word "and" as used in this document is intended to mean "and / or" unless otherwise indicated. The word "such as" is used in this document to mean "such as but not limited to" and is intended to mean that what follows is an example of what is included in the term being used.

[0078] It is also important to note that the devices, apparatuses and methods of the present application can be embodied in a variety of other forms, including but not limited to a device, apparatus, system, method, process, computer-readable medium, computer program product, and the like. It is also important to note that the devices, apparatuses and methods of the present application can be embodied as one or more components, either alone or in combination with other devices, apparatuses, systems, methods, processes, computer-readable media, computer program products, and the like.

[0079] The above description of disclosed aspects is given for illustrative purposes and is not intended to limit the scope of the application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0080] The above description has been given for illustrative and descriptive purposes. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain modifications, permutations, additions, and sub-combinations thereof.

Claims

1. A spray structure, characterized by, The application is applied to a coating equipment, the coating equipment comprises a process cavity and at least one first gas inlet pipe, the process cavity has a process chamber, and the at least one first gas inlet pipe extends into the upper part of the process chamber, and the first gas inlet pipe is configured to deliver a cleaning gas to the process chamber. The spray structure comprises: A main body extending in a first direction, the distance between the sidewall of the upper part of the main body and the center line of the main body in the first direction gradually increases from top to bottom, and the sidewall of the upper part of the main body is located below the first gas inlet pipe, so that the sidewall of the upper part of the main body can guide a first part of the cleaning gas delivered by the first gas inlet pipe to the top of the process chamber.

2. The spray structure of claim 1, wherein The main body has at least one first air hole extending in the first direction, and the first air hole can pass a second part of the cleaning gas delivered by the first gas inlet pipe, so that the second part of the cleaning gas reaches below the main body.

3. The spray structure of claim 2, wherein The number of the first air holes is multiple, and the multiple first air holes are uniformly arranged in the edge area of the main body.

4. The spray structure according to any one of claims 1 to 3, characterized in that The largest cross section of the main body in the direction perpendicular to the first direction is a target cross section, the area of the closed figure surrounded by the outer contour of the target cross section is a target area, and the first area of the orthographic projection of the main body on the target cross section is 25%-40% of the target area.

5. The spray structure of claim 2, wherein The bottom of the main body has a groove; The spray structure further comprises: A guide wing embedded in the groove and at least partially extending into the first air hole, the included angle between at least one sidewall of the guide wing and the first direction is an acute angle, and the guide wing is configured to guide the second part of the cleaning gas.

6. The spray structure of claim 5, wherein The largest cross section of the main body in the direction perpendicular to the first direction is a target cross section, the area of the closed figure surrounded by the outer contour of the target cross section is a target area, and the sum of the first area of the orthographic projection of the main body on the target cross section and the second area of the orthographic projection of the guide wing on the target cross section is 50%-70% of the target area.

7. The spray structure according to claim 1 or 2, wherein Further comprising: A gas guide part arranged around the main body and connected with the main body, the upper surface of the gas guide part is horizontal, so that the upper surface of the gas guide part can guide the first part of the cleaning gas delivered by the first gas inlet pipe to the top of the process chamber.

8. The spray structure of claim 7, wherein The gas guide part has at least one second air hole extending in the first direction, and the second air hole can pass a third part of the cleaning gas delivered by the first gas inlet pipe, so that the third part of the cleaning gas reaches below the gas guide part.

9. The spray structure of claim 2, wherein The coating equipment further comprises: A second gas inlet pipe extending into the upper part of the process chamber and arranged adjacent to the first gas inlet pipe, and the second gas inlet pipe is configured to deliver a process gas. The main body is connected with the second gas inlet pipe, and has a gas passage, a gas inlet communicated with the gas passage, and at least one gas outlet communicated with the gas passage. The second gas inlet pipe is communicated with the gas inlet, the gas outlet is communicated with the process chamber, the gas passage is configured to receive the process gas delivered by the second gas inlet pipe through the gas inlet, and the received process gas is sprayed to the process chamber through the gas outlet.

10. The spray structure of claim 9, wherein The distance between the sidewall of the lower part of the main body and the center line of the main body in the first direction gradually decreases from top to bottom, and a plurality of gas outlets are arranged around the edge area of the lower part of the main body. The gas outlets are located below the inlets of the first vent holes, and the gas outlets are inclined downward, so that the process gas can be sprayed to the process chamber through the gas outlets in an inclined downward direction.

11. A coating apparatus, characterized by, The shower structure comprises: a process cavity having a process chamber; at least one first gas inlet pipe extending into the upper part of the process chamber, the first gas inlet pipe being configured to deliver a cleaning gas to the process chamber; the shower structure of any one of claims 1 to 10, wherein the sidewall of the upper part of the main body of the shower structure is located below the first gas inlet pipe and is configured to guide a first portion of the cleaning gas delivered by the first gas inlet pipe to the top of the process chamber; a carrier arranged below the shower structure and configured to carry a wafer.

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