Ion generator and ion implantation device
By guiding the electric field lines in the ion generator to be distributed close to the center of the arc chamber, the problem of low ionization rate of gas molecules is solved, and higher ion production efficiency and cost reduction are achieved.
Patent Information
- Application Number
- CN202422886207.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-25
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2034-11-25
AI Technical Summary
The gas molecule ionization rate of existing ion generators is low, resulting in high ion production costs.
By introducing the first electric field regulating element into the ion generator, the electric field lines are distributed close to the center of the arc chamber, the electric field vacuum area is reduced, and the acceleration time of electrons in the arc chamber is increased, thereby improving the ionization rate of gas molecules.
The ionization rate of gas molecules is improved, the production cost of ions is reduced, and the efficiency of the ion implantation device is enhanced.
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Figure CN223462194U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure relates to the technical field of semiconductor technology, and in particular, to an ion generator and an ion implantation device. BACKGROUND
[0002] In a semiconductor integrated circuit manufacturing process, doping a semiconductor is one of the commonly used production processes. An ion implanter can accurately control the dosage of implanted impurity ions, thereby accurately adjusting the doping concentration of semiconductor materials, so that the semiconductor realizes a specific electrical performance.
[0003] Among them, the ion generator in the ion implanter is a device for generating ion sources, and the generation mechanism is to generate ions through the collision of electrons and gas molecules. However, the gas molecules in the ion generator cannot be fully utilized, resulting in a low ionization rate of the gas molecules, and further resulting in a high production cost of the ions. UTILITY MODEL CONTENT
[0004] The present disclosure provides an ion generator and an ion implantation device to solve the problem of low ionization rate of gas molecules and high production cost of ions in the related art.
[0005] In one aspect, an ion generator is provided, comprising a housing, a first cathode, a second cathode, a first filament, a second filament, and a first electric field adjusting member. The housing comprises an arc chamber, the second cathode is arranged opposite to the first cathode on two sides of the arc chamber, the first filament is arranged on a side of the first cathode away from the second cathode, and the second filament is arranged on a side of the second cathode away from the first cathode. The first electric field adjusting member is arranged in the arc chamber and connected with the housing. The first electric field adjusting member is configured to make the electric field in the arc chamber distribute close to the center of the arc chamber.
[0006] In this case, since the first electric field adjusting member can guide the electric field lines to distribute close to the center of the arc chamber, the first electric field vacuum region in the arc chamber is reduced, so that the acceleration time of electrons in the arc chamber is longer, thereby obtaining greater energy to impact the gas molecules, improving the ionization rate of the gas molecules, and reducing the production cost.
[0007] In some embodiments, the housing has a first central axis plane, and the first electric field adjusting member is symmetrical about the first central axis plane. The first central axis plane passes through the center of the arc chamber and is perpendicular to the direction in which the first cathode points to the second cathode.
[0008] In some embodiments, the surface of the first electric field adjusting member close to the first cathode is recessed towards the surface away from the first cathode, forming a first arc surface. The surface of the first electric field adjusting member close to the second cathode is recessed towards the surface away from the second cathode, forming a second arc surface.
[0009] In some embodiments, the ion generator further comprises a second electric field adjusting member and a third electric field adjusting member. The second electric field adjusting member is disposed in the arc chamber and connected with the shell. The second electric field adjusting member is disposed between the first electric field adjusting member and the first cathode. The third electric field adjusting member is disposed in the arc chamber and connected with the shell. The third electric field adjusting member is disposed between the first electric field adjusting member and the second cathode.
[0010] In some embodiments, the second electric field adjusting member is recessed towards the surface of the second cathode away from the surface of the second cathode to form a third arc surface; and the third electric field adjusting member is recessed towards the surface of the first cathode away from the surface of the first cathode to form a fourth arc surface.
[0011] In some embodiments, the first electric field adjusting member, the second electric field adjusting member and the third electric field adjusting member are integrally formed with the shell.
[0012] In some embodiments, the ion generator further comprises a first magnetic member and a second magnetic member. The first magnetic member is disposed outside the shell and located at the side of the shell close to the first cathode. The first magnetic member comprises a first iron core and a first coil, and the first coil is wound on the first iron core. The second magnetic member is disposed outside the shell and located at the side of the shell close to the second cathode. The second magnetic member comprises a second iron core and a second coil, and the second coil is wound on the second iron core. The current direction of the second coil is opposite to that of the first coil.
[0013] In some embodiments, the shell is provided with an air inlet and an ion beam outlet, and the axis of the air inlet intersects with the axis of the ion beam outlet.
[0014] In some embodiments, the axis of the air inlet is perpendicular to the axis of the ion beam outlet.
[0015] In another aspect, an ion implantation device is provided, which comprises the ion generator as described in the above embodiments.
[0016] The ion implantation device has the same structure and beneficial technical effects as the ion generator provided in some of the above embodiments, and will not be described here again.
[0017] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. BRIEF DESCRIPTION OF DRAWINGS
[0018] In order to more clearly illustrate the technical solutions in the present disclosure, the following will briefly introduce the drawings needed to be used in some embodiments of the present disclosure. Obviously, the drawings described in the following description are only some of the drawings of some embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size, actual process, etc. of the products involved in the embodiments of the present disclosure.
[0019] Figure 1 Structure diagram of an ion implantation device according to some embodiments;
[0020] Figure 2 Structure diagram of an ion generator according to some embodiments;
[0021] Figure 3 Electric field distribution diagram of an ion generator according to some embodiments;
[0022] Figure 4 Electric field distribution diagram of another ion generator according to some embodiments;
[0023] Figure 5 Schematic diagram of gas molecule movement according to some embodiments;
[0024] Figure 6 Schematic diagram of electron movement according to some embodiments.
[0025] In the drawings, 1000-ion implantation device; 100-ion generator; 200-extraction assembly; 300-magnetic analyzer; 400-accelerator; 500-beam scanning controller; 600-process chamber; 10-housing; 11-arc chamber; 111-first arc chamber; 112-second arc chamber; 111a-first electric field; 112a-second electric field; 111b-third electric field; 112b-fourth electric field; 11c-first electric field vacuum area; 11d-second electric field vacuum area; 12-gas inlet; 13-ion beam outlet; 14-first median surface; 21-first cathode; 22-second cathode; 31-first cathode; 32-second cathode; 41-first power supply; 42-second power supply; 43-third power supply; 50-first electric field adjusting member; 51-first arc surface; 52-second arc surface; 60-second electric field adjusting member; 61-third arc surface; 70-third electric field adjusting member; 71-fourth arc surface; 80-first magnetic member; 81-first core; 82-first coil; 90-second magnetic member; 91-second core; 92-second coil. DETAILED DESCRIPTION
[0026] In the following, the technical solutions in the embodiments of the present disclosure will be described clearly and completely with reference to the drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, but not all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by a person of ordinary skill in the art belong to the scope of protection of the present disclosure.
[0027] Unless otherwise required by context, the term "comprise" and its other forms such as "comprises" and "comprising" are to be construed as open-ended, i.e. as "including, but not limited to", in the description and the claims. In the description, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are not necessarily referring to the same embodiment or example. Furthermore, the described features, structures, materials or characteristics can be combined in any suitable manner in one or more embodiments or examples.
[0028] In the following, the terms "first", "second", etc. are used only for the purpose of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, the meaning of "a plurality of" is two or more, unless otherwise specified.
[0029] In describing some embodiments, "connection" and its derivatives can be used. The term "connection" should be interpreted broadly, for example, "connection" can be mechanical connection, can be electrical connection; can be fixed connection, can be detachable connection, or integral connection; can be directly connected, can be indirectly connected through an intermediate medium, or can be internal communication of two elements. For a person of ordinary skill in the art, the specific meaning of the above-mentioned terms in this text can be understood according to the specific circumstances.
[0030] "A and / or B" includes the following three combinations: only A, only B, and the combination of A and B.
[0031] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.
[0032] In this disclosure, terms such as "lower," "below," "above," and "upper," and similar terms are used to explain the relationships between components shown in the drawings. These terms may be relative and described based on directions shown in the drawings, or based on the order in which process steps are formed, but are not limited thereto.
[0033] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.
[0034] like Figure 1 As shown, some embodiments of the present disclosure provide an ion implantation apparatus 1000 for ion doping a semiconductor material. The ion implantation apparatus 1000 includes an ion generator 100, an extraction assembly 200, a magnetic analyzer 300, an accelerator 400, a beam scanning controller 500, and a process chamber 600. The ion generator 100, the extraction assembly 200, the magnetic analyzer 300, the accelerator 400, the beam scanning controller 500, and the process chamber 600 are sequentially connected.
[0035] Among them, the ion generator 100 generates ions by colliding gas molecules with electrons, and the extraction component 200 draws out the ions to form an ion beam and shoots it to the magnetic analyzer 300. Different ions have different movement trajectories under the magnetic field in the magnetic analyzer 300, which can separate the ions and select the ions required for the doping process. The selected ions are accelerated by the accelerator 400 to form an ion beam, which enables it to penetrate the semiconductor material and be injected into the crystal lattice. The beam scanning controller 500 is used to control the scanning range and uniformity of the ion beam to ensure the uniformity of ion implantation. The process chamber 600 provides a vacuum environment, places semiconductor materials, and performs the ion implantation process.
[0036] In some embodiments, as Figure 2 As shown, the ion generator 100 includes a housing 10, a first cathode 21, a second cathode 22, a first filament 31, and a second filament 32. The housing 10 includes an arc chamber 11, the second cathode 22 is arranged on opposite sides of the arc chamber 11, the first filament 31 is arranged on a side of the first cathode 21 away from the second cathode 22, and the second filament 32 is arranged on a side of the second cathode 22 away from the first cathode 21.
[0037] In some examples, such as Figure 2 As shown, the ion generator 100 further includes a first power supply 41, a second power supply 42, and a third power supply 43. The first power supply 41 is connected to the first filament 31 and the second filament 32 to heat the first filament 31 and the second filament 32, so that the first filament 31 emits electrons toward the first cathode 21 and the second filament 32 emits electrons toward the second electrode 22.
[0038] like Figure 2 As shown, the second power supply 42 is connected to the first filament 31 and the first cathode 21, and to the second filament 32 and the second cathode 22. In this case, an electric field is generated between the first filament 31 and the first cathode 21, and between the second filament 32 and the second cathode 22. Electrons emitted from the first filament 31 and the second filament 32 are accelerated by the electric field and bombard the surfaces of the first cathode 21 and the second cathode 22, thereby heating the first cathode 21 and the second cathode 22. This in turn causes the first cathode 21 and the second cathode 22 to emit electrons into the arc chamber 11.
[0039] like Figure 2 As shown, the third power supply 43 is connected to the first cathode 21 and the housing 10, and to the second cathode 22 and the housing 10. In this case, the first cathode 21 and the housing 10, and the second cathode 22 and the housing 10 generate an electric field, so that electrons emitted by the first cathode 21 and the second cathode 22 move in the arc chamber 11 under the action of the electric field.
[0040] In some embodiments, as Figure 2As shown, the housing 10 includes an air inlet 12 and an ion beam outlet 13. Gas molecules are transmitted into the arc chamber 11 through the air inlet 12, so that electrons in the arc chamber 11 collide with the gas molecules to generate ions. The ion beam outlet 13 is used to discharge the generated ions.
[0041] The gas molecules include boron trifluoride (BF3). Exemplarily, the gas molecules are boron trifluoride (BF3).
[0042] In some examples, such as Figure 2 and Figure 3 As shown, the housing 10 has a first central axis surface 14, which passes through the center of the arc chamber 11 and is perpendicular to the direction from the first cathode 21 to the second cathode 22. The first central axis surface 14 can divide the arc chamber 11 into a first arc chamber 111 and a second arc chamber 112. In the first arc chamber 111, a first electric field 111a is generated between the first cathode 21 and the housing 10. In the second arc chamber 112, a second electric field 112a is generated between the second cathode 22 and the housing 10. For the electric field distribution of the first electric field 111a and the second electric field 112a, please refer to the following figure. Figure 3 shown.
[0043] However, a large first electric field vacuum region 11c exists at the interface between the first electric field 111a and the second electric field 112a. This prevents electrons from gaining energy within the first electric field vacuum region 11c to accelerate and collide with gas molecules, resulting in a low ionization rate for the gas molecules and, in turn, a high ion production cost. It should be noted that the first electric field vacuum region 11c refers to a region where there is no electric field distribution.
[0044] Based on this, Figure 2 and Figure 4 As shown, the ion generator 100 provided in the embodiment of the present disclosure further includes a first electric field adjustment member 50, which is disposed in the arc chamber 11 and connected to the housing 10. The first electric field adjustment member 50 is configured to distribute the electric field in the arc chamber 11 close to the center of the arc chamber 11.
[0045] In this case, since the first electric field adjustment member 50 can guide the electric field lines to be distributed close to the center of the arc chamber 11, a third electric field 111b is generated between the first cathode 21 and the housing 10 in the first arc chamber 111, and a fourth electric field 112b is generated between the second cathode 22 and the housing 10 in the second arc chamber 112. The electric field distribution of the third electric field 111b and the fourth electric field 112b can be seen in FIG. Figure 4As shown, a second electric field vacuum region 11d is generated between the third electric field 111b and the fourth electric field 112b. At this time, the first electric field adjusting member 50 can reduce the first electric field vacuum region 11c in the arc chamber 11, so that the acceleration time of the electrons in the arc chamber 11 is longer, and thus a greater energy impact on the gas molecules is obtained, the ionization rate of the gas molecules is improved, and the production cost is reduced.
[0046] In addition, due to the increase of the ionization rate of the gas molecules, the probability of secondary impact of the gas molecules and the electrons is increased, which can ionize more BF2 ++ ions, and the BF2 ++ ions and Mo ++ metal ions, WC ++++ metal ions, and the difference in mass-to-charge ratio is increased, so that the magnetic analyzer 300 can separate the BF2 ++ ions.
[0047] In some examples, as Figure 2 shown, the shape of the arc chamber 11 can be cylindrical, the first electric field adjusting member 50 surrounds a circumference of the circular arc chamber 11, and is connected with the shell 10.
[0048] In some embodiments, as Figure 2 shown, the first electric field adjusting member 50 is symmetrical about the first central axis surface 14. At this time, the first electric field adjusting member 50 can uniformly adjust the electric field in the first arc chamber 111 and the second arc chamber 112.
[0049] In some embodiments, as Figure 2 and Figure 5 shown, the surface of the first electric field adjusting member 50 close to the first cathode 21 is recessed away from the surface of the first cathode 21, forming a first arc surface 51. The surface of the first electric field adjusting member 50 close to the second cathode 22 is recessed away from the surface of the second cathode 22, forming a second arc surface 52.
[0050] At this time, the first arc surface 51 is located in the first arc chamber 111, and the second arc surface 52 is located in the second arc chamber 112. After the gas molecules enter the arc chamber 11 from the gas inlet 12, the gas molecules make centripetal motion along the first arc surface 51 in the first arc chamber 111 and make centripetal motion along the second arc surface 52 in the second arc chamber 112, so as to avoid the gas molecules from being decelerated due to collision with the shell 10, so that the gas molecules keep the original speed in the first arc chamber 111, and the probability of impact of the gas molecules and the electrons is increased.
[0051] In some embodiments, as Figure 2As shown, the ion generator 100 further comprises a second electric field adjusting member 60 and a third electric field adjusting member 70. The second electric field adjusting member 60 is disposed in the arc chamber 11 and connected with the shell 10, and is disposed between the first electric field adjusting member 50 and the first cathode 21. The third electric field adjusting member 70 is disposed in the arc chamber 11 and connected with the shell 10, and is disposed between the first electric field adjusting member 50 and the second cathode 22.
[0052] As shown in Figure 2 and Figure 4 The second electric field adjusting member 60 is used to adjust the electric field distribution of the third electric field 111b on the side close to the first cathode 21, and the third electric field adjusting member 70 is used to adjust the electric field distribution of the fourth electric field 112b on the side close to the second cathode 22. It can be understood that the emission area of the electrons emitted by the first cathode 21 and the second cathode 22 can be a fan shape, and the second electric field adjusting member 60 and the third electric field adjusting member 70 can guide the electric field lines to be close to the emission area of the electrons, so that the acceleration time of the electrons is longer, and more energy is obtained to hit the gas molecules, thereby increasing the ionization rate of the gas molecules.
[0053] In some examples, as shown in Figure 2 and Figure 4 The distance between the second electric field adjusting member 60 and the first electric field adjusting member 50 is greater than the distance between the second electric field adjusting member 60 and the first cathode 21, and the distance between the third electric field adjusting member 70 and the first electric field adjusting member 50 is greater than the distance between the third electric field adjusting member 70 and the second cathode 22. At this time, the distribution area of the third electric field 111b and the fourth electric field 112b can be increased, so that the acceleration time of the electrons is longer, and more energy is obtained to hit the gas molecules, thereby increasing the ionization rate of the gas molecules.
[0054] In some embodiments, as shown in Figure 2 and Figure 5As shown, the second electric field adjustment member 60 is close to the surface of the second cathode 22 and is recessed toward the surface away from the second cathode 22, forming a third arc surface 61. The third electric field adjustment member 70 is close to the surface of the first cathode 21 and is recessed toward the surface away from the first cathode 21, forming a fourth arc surface 71. The third arc surface 61 is located in the first arc chamber 111, and the fourth arc surface 71 is located in the second arc chamber 112. At this time, when the gas molecules move centripetally from the first arc surface 51 to the side of the first cathode 21, they continue to move centripetally along the third arc surface 61, causing the gas molecules to circulate in the first arc chamber 111, reducing the deceleration of the gas molecules due to collision with the shell 10, so that the gas molecules maintain their original speed in the first arc chamber 111, and increasing the probability of gas molecules colliding with electrons. When the gas molecules move centripetally from the second arc surface 52 toward one side of the second cathode 22, they continue to move centripetally along the fourth arc surface 71, so that the gas molecules move in a circular motion within the second arc chamber 112, reducing the deceleration of the gas molecules due to collision with the shell 10, so that the gas molecules maintain their original speed and move within the second arc chamber 112, thereby increasing the probability of gas molecules colliding with electrons.
[0055] In some examples, such as Figure 2 As shown, the surface of the second electric field adjusting member 60 close to the first cathode 21 is a plane, and the surface of the third electric field adjusting member 70 close to the second cathode 22 is a plane, so as to improve the production efficiency of the second electric field adjusting member 60 and the third electric field adjusting member 70.
[0056] In some embodiments, as Figure 2 As shown, the gas inlet 12 is symmetrical about the first central axis plane 14 , so that the gas molecules entering the arc chamber 11 can be evenly distributed in the first arc chamber 111 and the second arc chamber 112 , thereby improving the ionization rate of the gas molecules.
[0057] In some embodiments, the first electric field adjusting member 50 , the second electric field adjusting member 60 and the third electric field adjusting member 70 are integrally formed with the housing 10 to improve the reliability of the ion generator 100 .
[0058] In some embodiments, as Figure 2 As shown, the ion generator 100 also includes a first magnetic component 80 and a second magnetic component 90. The first magnetic component 80 is arranged on the outside of the shell 10 and is located on the side of the shell 10 close to the first cathode 21. The first magnetic component 80 includes a first iron core 81 and a first coil 82, and the first coil 82 is wound on the first iron core 81. The second magnetic component 90 is arranged on the outside of the shell 10 and is located on the side of the shell 10 close to the second cathode 22. The second magnetic component 90 includes a second iron core 91 and a second coil 92, and the second coil 92 is wound on the second iron core 91. Among them, the direction of the current I of the second coil 92 is opposite to that of the first coil 82 (the direction of the current I is as shown in FIG. Figure 2 shown).
[0059] At this time, the first magnetic member 80 generates a first magnetic field B1 (the direction of the first magnetic field B1 is shown as Figure 6 ), and the second magnetic member 90 generates a second magnetic field B2 (the direction of the second magnetic field B2 is shown as Figure 6 ), and the directions of the first magnetic field B1 and the second magnetic field B2 are perpendicular. The movement of the electrons emitted by the first cathode 21 is in a first direction v1 (the direction of the first direction v1 is shown as Figure 6 ), and the electrons are subjected to a first Lorentz force F1 (the direction of the first Lorentz force F1 is shown as Figure 6 ) in the first magnetic field B1, so that the electrons make circular motion in the first arc chamber 111. The movement of the electrons emitted by the second cathode 22 is in a second direction v2 (the direction of the second direction v2 is shown as Figure 6 ), and the electrons are subjected to a second Lorentz force F2 (the direction of the second Lorentz force F2 is shown as Figure 6 ) in the second magnetic field B2, so that the electrons make circular motion in the second arc chamber 112, increasing the probability of collision between the electrons and the gas molecules, and further generating more ions.
[0060] In some examples, as shown in Figure 2 , the first core 81 and the second core 91 are symmetrical along the first central axis surface 14, so that the first magnetic field B1 and the second magnetic field B2 are uniformly distributed in the arc chamber 11.
[0061] In some embodiments, as shown in Figure 2 , the axis of the gas inlet 12 intersects the axis of the ion beam outlet 13, avoiding the gas molecules from the gas inlet 12 entering the arc chamber 11 directly from the ion beam outlet, reducing the waste of gas molecules, and further reducing the production cost. For example, the axis of the gas inlet 12 is perpendicular to the axis of the ion beam outlet 13.
[0062] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any person skilled in the art can think of changes or replacements within the technical range disclosed by the present disclosure, which should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.
Claims
1. An ion generator, characterized by, The application relates to an ion generator. The ion generator comprises: a shell comprising an arc chamber; a first cathode; a second cathode arranged on the two sides of the arc chamber opposite to the first cathode; a first filament arranged on the side of the first cathode away from the second cathode; a second filament arranged on the side of the second cathode away from the first cathode; 2. The ion generator of claim 1, wherein, a first electric field adjusting member arranged in the arc chamber and connected with the shell; the first electric field adjusting member is configured to make the electric field in the arc chamber distribute close to the center of the arc chamber. The shell has a first central axial surface, and the first electric field adjusting member is symmetrical about the first central axial surface; 3. The ion generator of claim 2, wherein, The first central axial surface passes through the center of the arc chamber and is perpendicular to the direction in which the first cathode points to the second cathode.
4. The ion generator of claim 3, wherein, The surface of the first electric field adjusting member close to the first cathode is recessed towards the surface away from the first cathode to form a first arc surface; the surface of the first electric field adjusting member close to the second cathode is recessed towards the surface away from the second cathode to form a second arc surface. The application further relates to an ion generator. The ion generator comprises: a second electric field adjusting member arranged in the arc chamber and connected with the shell; 5. The ion generator of claim 4, wherein, The second electric field adjusting member is arranged between the first electric field adjusting member and the first cathode; 6. The ion generator of claim 4, wherein, a third electric field adjusting member arranged in the arc chamber and connected with the shell; the third electric field adjusting member is arranged between the first electric field adjusting member and the second cathode.
7. The ion generator of any one of claims 1-6, wherein, The surface of the second electric field adjusting member close to the second cathode is recessed towards the surface away from the second cathode to form a third arc surface; the surface of the third electric field adjusting member close to the first cathode is recessed towards the surface away from the first cathode to form a fourth arc surface. The first electric field adjusting member, the second electric field adjusting member and the third electric field adjusting member are integrally formed with the shell. The application further relates to an ion generator.
8. The ion generator of any one of claims 1-6, wherein, The ion generator comprises:
9. The ion generator of claim 8, wherein, a first magnetic member arranged on the outside of the shell and located on the side of the shell close to the first cathode; the first magnetic member comprises a first iron core and a first coil, and the first coil is wound on the first iron core; 10. An ion implantation device, characterized by, a second magnetic member arranged on the outside of the shell and located on the side of the shell close to the second cathode; the second magnetic member comprises a second iron core and a second coil, and the second coil is wound on the second iron core; the current direction of the second coil is opposite to that of the first coil. The shell is provided with an air inlet and an ion beam outlet; the axis of the air inlet intersects with that of the ion beam outlet. The axis of the air inlet is perpendicular to that of the ion beam outlet. The application relates to an ion generator. The ion generator comprises any one of the ion generators according to claims 1-9.