Circuit structure of Hall current sensor chip and Hall current sensor chip

Abstract

The utility model provides a circuit structure of a Hall current sensor chip and the Hall current sensor chip. The circuit structure comprises a Hall element, an amplifier, a first comparator, a second comparator and a programmer, the Hall element is used for sensing the detection current and generating a voltage signal related to the detection current; the amplifier is used for amplifying the voltage signal; the first comparator is used for comparing the amplified voltage signal with a reference source, judging signal integrity and generating a comparison signal; the second comparator is used for comparing the comparison signal with a reference signal, judging the signal amplitude and generating an output signal; and the programmer is used for adjusting the output sensitivity and / or the static output voltage. The circuit has the technical effects that the output precision is improved, the output stability is improved, the circuit structure complexity is reduced, and the output sensitivity and / or the static output voltage are / is adjustable, so that the product performance is improved and the cost is reduced in final application.

Description

Technical Field

[0001] This application relates to the field of current sensor technology, specifically to a circuit structure and a Hall current sensor chip. Background Art

[0002] With the rise of electric vehicles and electric cars, charging piles and charging guns have become increasingly familiar to the public. Current sensors are responsible for detecting the current magnitude of charging piles and charging guns, ensuring their safety at all times. Current sensors convert the pulse signal of the current into a quantifiable voltage or frequency signal, accurately measuring current over a wide range, regardless of whether it's direct current or alternating current. Current sensors themselves have strong isolation capabilities, preventing noise from either direct current or alternating current from being transmitted to the detection signal. In automotive battery management systems (BMS), precise monitoring of the battery pack capacity, charging / discharging current magnitude, and the charging / discharging process is crucial. In the new energy market, current sensors also have extremely broad applications and demand in solar energy, photovoltaics, charging, inverters, and energy storage.

[0003] Current sensors can be classified into more than a dozen types, including resistive shunts, current transformers, Hall effect current sensors, fluxgate current sensors, Rogowski coils, giant magnetoresistive current sensors, and fiber optic current sensors.

[0004] Hall effect current sensors operate based on the Hall effect principle and are a commonly used type of current sensor. There are two types: open-loop and closed-loop. Open-loop Hall effect current sensors use the Hall direct amplification principle, while closed-loop Hall effect current sensors use the magnetic balance principle. Generally, open-loop sensors are suitable for high-current monitoring, while closed-loop sensors are suitable for low-current monitoring.

[0005] refer to Figure 1 This illustrates the basic working principle of an open-loop Hall current sensor. When an AC or DC current (Ip) passes through a conductor, a magnetic field is generated around it. The magnitude of this magnetic field is proportional to the intensity of the current. The generated magnetic field is concentrated inside a magnetic ring, measured by a Hall element in the air gap of the magnetic ring, and amplified for output. The output voltage VS of the Hall element accurately reflects the primary current Ip. The signal output by the Hall element reflects the intensity and direction of the AC or DC current. By measuring the output signal of the Hall element, the magnitude of the AC or DC current passing through the conductor can be accurately measured.

[0006] refer to Figure 2 This illustrates the basic working principle of a closed-loop Hall current sensor. The closed-loop Hall current sensor employs a magnetic balance principle and belongs to the category of compensated sensors. Figure 1 The difference is that, Figure 2The magnetic field generated by the primary current Ip at the magnetic ring is compensated by a magnetic field generated by the secondary coil current. This compensation current Is accurately reflects the primary current Ip, thus putting the Hall device in a zero-flux detection state. Specifically, when a current Ip flows through the main circuit, the magnetic field generated on the conductor is focused by the magnetic ring and induced onto the Hall element. The resulting signal output drives the power transistor, causing it to conduct, thus obtaining a compensation current Is. This current Is then generates a magnetic field through a multi-turn winding of the secondary coil. This magnetic field is exactly opposite to the magnetic field generated by the measured current Ip, thus compensating for the original magnetic field. At this point, the Hall device indicates zero flux, and Ip can be measured using Is. Generally, a measuring resistor is used to convert the current Is into a voltage, and the output signal is a voltage signal.

[0007] refer to Figure 3 This diagram illustrates the functional modules of an existing ACS712 Hall current sensor chip. It includes a high-sensitivity Hall sensor, a Hall signal preamplifier, a high-precision Hall temperature compensation unit, an oscillator, a dynamic offset cancellation circuit, and an amplifier output module. As an open-loop Hall current sensor, the ACS712 provides an affordable and accurate solution for AC or DC current measurement in industrial, commercial, and communication systems.

[0008] The applicant found that how to provide a Hall current sensor chip with higher accuracy and simpler structure is still a technical problem that the industry urgently needs to solve. Utility Model Content

[0009] This application proposes a circuit structure and a Hall current sensor chip.

[0010] In a first aspect, this application provides a circuit structure for a Hall current sensor chip, comprising: a Hall element, an amplifier connected to the Hall element, a first comparator connected to the amplifier, a second comparator connected to the first comparator, and a programmer connected to the second comparator;

[0011] The Hall element is used to sense the detection current and generate a voltage signal related to the detection current;

[0012] The amplifier is used to amplify the voltage signal to meet a set sensitivity requirement, and output the amplified voltage signal to the first comparator;

[0013] The first comparator is used to compare the amplified voltage signal with a reference source, determine the integrity of the voltage signal, and output a corresponding comparison signal to the second comparator.

[0014] The second comparator is used to compare the comparison signal with the reference signal, determine the amplitude of the comparison signal, and generate a corresponding output signal;

[0015] A programmer for adjusting the output sensitivity and / or static output voltage of the second comparator.

[0016] In some alternative implementations, it also includes: a wire circuit, a first voltage regulator, a second voltage regulator, and a temperature sensor;

[0017] The wire circuit serves as the path through which the detected current flows;

[0018] The first voltage regulator is used to provide a first power supply voltage to the Hall element, the amplifier, the first comparator, the second comparator and the temperature sensor, and adjust the first power supply voltage according to the temperature compensation signal provided by the temperature sensor;

[0019] A second voltage regulator is used to provide a second power supply voltage to the programmer;

[0020] A temperature sensor is used to provide a temperature compensation signal to the first voltage regulator and to control the first voltage regulator to stop providing power voltage when the operating ambient temperature exceeds the set range.

[0021] In some optional embodiments, the Hall element includes a first Hall element and a second Hall element, and the voltage signal is a differential voltage signal, which includes a high-level signal generated by the first Hall element and a low-level signal generated by the second Hall element.

[0022] In some alternative implementations, the amplifier includes:

[0023] A first amplifier, connected between the first Hall element and the first comparator, is used to amplify the high-level signal;

[0024] A second amplifier, connected between the second Hall element and the first comparator, is used to amplify the low-level signal.

[0025] In some optional implementations, the reference source used by the first comparator is the complete signal from the previous stage, and the first comparator is further used for:

[0026] The amplified high-level signal is compared with a reference source to determine signal integrity, identify signal correctness, and output a first comparison signal; and

[0027] The amplified low-level signal is compared with the reference source to determine signal integrity and correctness, and a second comparison signal is output.

[0028] In some alternative implementations, the reference signal used by the second comparator includes:

[0029] The first comparison signal from the programmer; and / or

[0030] The second reference signal is generated by dividing the second comparison signal by a voltage divider capacitor.

[0031] In some optional implementations, when the refresh rate and amplitude of the first reference signal are both greater than those of the second reference signal, the second comparator compares the first reference signal with the first comparison signal to generate the output signal.

[0032] In some alternative implementations, when the program is not burned to the programmer, the second comparator compares the second reference signal with the first comparison signal to generate the output signal.

[0033] In some optional embodiments, the adjustable range of the static output voltage is 2.5V ± 0.2V or 50% of the power supply voltage, and the adjustable range of the output sensitivity is 1.8 to 30mV / Gs.

[0034] Secondly, this application provides a Hall current sensor chip, including the circuit structure of the Hall current sensor chip as described in the first aspect.

[0035] The present application proposes a circuit structure for a Hall current sensor chip. This application uses two comparators for two-stage comparison output; the upper stage determines signal integrity, and the lower stage determines signal amplitude. A programmer is included to adjust the output sensitivity and / or static output voltage. The resulting technical advantages include, but are not limited to: reducing dynamic offset, improving anti-interference capability, improving output accuracy, improving output stability, allowing adjustment of output sensitivity and / or static output voltage, and reducing structural complexity, thereby improving product performance and reducing costs in the final application. Attached Figure Description

[0036] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0037] Figure 1 This is a schematic diagram illustrating the basic working principle of an open-loop Hall current sensor.

[0038] Figure 2 This is a schematic diagram illustrating the basic working principle of a closed-loop Hall current sensor.

[0039] Figure 3This is a functional module diagram of an existing ACS712 Hall current sensor chip.

[0040] Figure 4 This is a schematic diagram of one embodiment of the circuit structure of a Hall current sensor chip according to this application;

[0041] Figure 5 yes Figure 4 The circuit structure shown is a schematic diagram of a process circuit.

[0042] Figure 6 This is a schematic diagram of an application circuit based on the circuit structure of a Hall current sensor chip according to this application.

[0043] Figure 7-Figure 9 This is a process structure diagram generated based on the proprietary circuitry of the Hall current sensor chip in this application. DETAILED DESCRIPTION

[0044] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.

[0045] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," indicating orientation or positional relationships, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0046] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," etc., should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0047] In the description of this application, it should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0048] refer to Figure 4 , Figure 4This application describes a circuit structure for a Hall current sensor chip (hereinafter referred to as the circuit structure). The circuit structure is based on the principle of a closed-loop Hall current sensor.

[0049] like Figure 4 As shown, the circuit structure of the Hall current sensor chip of this application includes: a Hall element, an amplifier connected to the Hall element, a first comparator U10 connected to the amplifier, a second comparator U11 connected to the first comparator U10, and a programmer U2 connected to the second comparator U11. The Hall element may further include a first Hall element U3 and a second Hall element U4, and the amplifier may further include a high-precision first amplifier U5 and a second amplifier U6.

[0050] Here, the Hall element is used to sense and detect the current, generating a voltage signal related to the detected current. Optionally, the voltage signal can be a differential voltage signal, including two paths, one of which is a high-level signal and the other is a low-level signal. The high-level signal can be generated by the first Hall element U3 through sensing and detecting the current, and the low-level signal can be generated by the second Hall element U4 through sensing and detecting the current.

[0051] Here, the amplifier amplifies the voltage signal to meet the set sensitivity requirements and outputs the amplified voltage signal to the first comparator U10. The two voltage signals can be amplified by the first amplifier U5 and the second amplifier U6, respectively. For example, the first amplifier U5 is connected between the first Hall element U3 and the first comparator U10 to amplify the high-level signal; the second amplifier U6 is connected between the second Hall element U4 and the first comparator U10 to amplify the low-level signal.

[0052] Here, the first comparator U10 compares the amplified voltage signal with the reference source to determine the integrity of the voltage signal and outputs a corresponding comparison signal to the second comparator U11. Specifically, it compares the amplified high-level signal with the reference source to output a first comparison signal, and compares the amplified low-level signal with the reference source to output a second comparison signal.

[0053] Here, the second comparator U11 is used to compare the comparison signal output by the first comparator U10 with the reference signal, determine the amplitude of the comparison signal, and generate the corresponding output signal.

[0054] Here, programmer U2 is used to adjust the output sensitivity and / or static output voltage of the second comparator U11. Programmer U2 can program the output sensitivity range to determine the final required sensitivity value.

[0055] In some alternative implementations, the circuit structure further includes: a wire circuit U8, a first voltage regulator U1, a second voltage regulator U7, and a temperature sensor U9.

[0056] The wire circuit U8 is used to detect the path of current flow. It has two ports, namely Ip+ and Ip-. When it is DC, it can also be referred to as the positive input terminal DC+ and the negative output terminal DC-.

[0057] The first voltage regulator U1 is connected to Vcc (positive power supply voltage, such as +5V) and is used to provide the first power supply voltage to the Hall element, amplifier, first comparator U10, second comparator U11 and temperature sensor U9, and adjust the first power supply voltage according to the temperature compensation signal provided by the temperature sensor U9.

[0058] The second voltage regulator U7, connected to Vcc (positive power supply voltage, for example +5V), provides a variable second power supply voltage to the programmer U2. For example, the output voltage of U7 can be changed to provide a 1.8V power supply voltage to the programmer U2.

[0059] Temperature sensor U9 provides a temperature compensation signal to the first voltage regulator U1 and controls the first voltage regulator U1 to stop providing power voltage when the ambient temperature exceeds a set range. For example, temperature sensor U9 can provide a temperature rise curve ranging from -40°C to 150°C, reflecting the relationship between ambient temperature and power supply voltage / output sensitivity, thereby providing a temperature compensation signal corresponding to the temperature.

[0060] In some alternative implementations, the wire circuit U8 is formed on the wafer, and its performance and area are determined by the materials used in the wafer fabrication.

[0061] In some optional implementations, the reference source used by the first comparator U10 is the complete signal from the previous stage. The first comparator U10 is further used to determine the integrity of the two voltage signals by comparing them with the reference source, and to identify whether the two voltage signals are correct, thereby determining the current transformation of the Ip+ / Ip- wires, and thus determining whether the AH371x is stable or faulty. Specifically, the first comparator can be further used to: compare the amplified high-level signal with the reference source to determine the signal integrity, identify the signal correctness, and output the first comparison signal, that is, the signal Si1 input to pin 1 of the second comparator U11; and compare the amplified low-level signal with the reference source to determine the signal integrity, identify the signal correctness, and output the second comparison signal.

[0062] In some alternative implementations, the reference signal used by the second comparator may include: a first reference signal from the programmer U2, namely signal SI0 output from pin 7 of the programmer U2, which can be input to pin 3 of the second comparator U11; and / or a second reference signal generated by dividing the second comparison signal by a voltage divider capacitor, namely signal Si2 input to pin 3 of the second comparator U11.

[0063] In some optional implementations, when the refresh rate and amplitude of the first reference signal are both greater than those of the second reference signal, the second comparator U11 compares the first reference signal with the first comparison signal to generate an output signal.

[0064] In some alternative implementations, when the program is not burned to the programmer U2, the second comparator U11 compares the second reference signal Si2 with the first comparison signal Si1 to generate an output signal Si.

[0065] In some alternative implementations, the magnitude of the second reference signal can be adjusted according to the value of C3.

[0066] In some alternative implementations, the second reference signal is a square wave signal between 0.1 and 0.7V. This signal can be used as a reference signal for U11, but the square wave signal is unstable, and in some cases U11 may easily ignore the square wave signal as noise.

[0067] In some alternative implementations, the first reference signal is a near-straight high level. This conductive strip can be a frequency signal amplified by a transistor amplifier. When selecting a transistor, there are frequency requirements, typically higher than the frequency of the voltage divider capacitor C3. When the transistor amplifier provides a high level with a refresh rate higher than that of the voltage divider capacitor C3 and an amplitude greater than that of C3, it will be used by the second comparator U11 as a more stable low-level reference source. That is, after programming, the straight high level provided by U2, as the first signal, will replace the second reference signal generated after voltage division by C3 and be used as the reference voltage by U11.

[0068] In some optional embodiments, the static output voltage and output sensitivity of the circuit structure of this application are both adjustable, wherein the adjustable range of the static output voltage is 2.5V±0.2V or 50% of the power supply voltage, and the adjustable range of the output sensitivity is 1.8~30mV / Gs.

[0069] In some alternative implementations, the first power supply voltage provided by the first regulator U1 for the circuit structure and programming includes, but is not limited to, 5V / 3.3V / 1.8V.

[0070] In some alternative implementations, the first Hall element U3 and the second Hall element U4, by sensing the magnitude and strength of the current in the Ip+ / Ip- wire circuit U8, output both high-level and low-level signals as mV digital signals.

[0071] In some alternative implementations, the second comparator U11 can be a high-precision comparator that compares the input of U10 to determine the final output accuracy. It can operate in the range of -50 degrees to 85 degrees and has obvious low-temperature characteristics.

[0072] In some alternative implementations, the connection relationships of some components in the circuit structure that are not directly marked by the segment connection method are as follows: pin 2 of temperature sensor U9 is connected to pin 3 of first voltage regulator U1, and pin 7 of programmer U2 is connected to pin 3 of second programmer U11.

[0073] Next, please refer to Figure 5 , Figure 5 yes Figure 4 The circuit structure shown corresponds to a schematic diagram of a manufacturing process. Figure 5 and Figure 4 These are two different representations of the circuit structure.

[0074] The above briefly introduces the design circuit of the Hall current sensor chip of this application. This circuit structure is used to implement the current sensor function and features enhanced performance, good functional stability, and strong anti-interference capability.

[0075] Furthermore, this application also provides a Hall current sensor chip, including the circuit structure of the Hall current sensor chip as described above. This Hall current sensor chip can be manufactured using Bi-BCD (Bipolar-Bipolar-CMOS-DMOS) technology. Internally, the Hall current sensor chip includes a high-sensitivity Hall element (e.g., a first Hall element U3 and a second Hall element U4), a high-precision Hall temperature compensation unit (e.g., a temperature sensor U9), a Hall signal preamplifier (e.g., a first amplifier U5 and a second amplifier U6), and an amplifier output module (e.g., a first comparator U10 and a second comparator U11). Optionally, it may also include an oscillator (for providing a clock signal to the chip, etc.), a dynamic offset cancellation circuit, etc. This Hall current sensor chip can provide customers with a more effective AC / DC (alternating current / direct current) detection solution and is widely applicable to communication, industrial, and consumer electronic devices.

[0076] The Hall current sensor chip of this application employs overcurrent protection and high-bandwidth dynamic offset cancellation technology. In the absence of a magnetic field, the static output can be selected as either 50% VCC or a fixed value of 2.5V. Furthermore, the internally integrated dynamic offset cancellation circuit can reduce or eliminate offset voltage, making the chip's sensitivity unaffected by external pressure and packaging stress, thus improving stability and reliability.

[0077] The Hall current sensor chip of this application has an output voltage that is proportional to the strength of the applied magnetic field. Users can program the chip sensitivity and static (zero field) output voltage on the power pin (via a programming module), thereby improving product performance in the final application.

[0078] The Hall current sensor chip of this application has an adjustable static output voltage range of 2.5V±0.2V or 50%Vcc, and an adjustable output sensitivity range of 1.8~30mV / Gs.

[0079] The Hall current sensor chip of this application can be packaged in TO92S or TO94 packages. TO92S and TO94 packages are small through-hole packages suitable for a variety of electronic applications, with well-defined size standards and electrical characteristics, and meet environmental protection requirements.

[0080] In some optional embodiments, the Hall current sensor chip of this application has some electrical performance parameters as shown in Table 1 below. The test conditions are Vcc = 5.0V, DC operating parameters (unless otherwise specified), and Ta = 25℃.

[0081] Table 1

[0082]

[0083] In some optional embodiments, the Hall current sensor chip of this application has some accuracy parameters as shown in Table 2 below. The test conditions are Vcc = 5.0V, DC operating parameters (unless otherwise specified), and Ta = 25℃.

[0084] Table 2

[0085]

[0086] In some optional embodiments, the Hall current sensor chip of this application has some programming parameters as shown in Table 3 below. The test conditions are Vcc = 5.0V, DC operating parameters (unless otherwise specified), and Ta = 25℃.

[0087] Table 3

[0088]

[0089] In some optional implementations, the Hall current sensor chip of this application is divided into nearly a hundred specifications according to the detected current magnitude Ip, sensitivity mV / A, current accuracy mV / Gs, accuracy ETOT, response time uss, anti-interference capability PSR, impedance mΩ, and bandwidth Hz.

[0090] In some alternative implementations, the Hall current sensor chip of this application also provides an internally controlled clock mechanism to intermittently power the Hall element and the analog signal processing circuitry. The device is periodically "wake up" via internal logic, comparing the magnetic flux through the Hall element with a predefined threshold. During the "sleep" cycle, the output drive transistor is latched into its previous state.

[0091] refer to Figure 6 This application also provides an application circuit for the Hall current sensor chip used in this application. This application circuit is a general-purpose circuit specifically adapted to the chip function of this application. The general-purpose circuit illustrates the external connection methods of the Vcc, VOut (output), and Gnd (ground) pins of the Hall current sensor chip, as detailed in [link to details]. Figure 6 This will not be elaborated upon here.

[0092] refer to Figure 7-Figure 9 The diagram illustrates the process structure of the proprietary circuitry for the Hall current sensor chip described in this application, representing the chip's process technology and performance. Figure 7 This is the TOP layer (i.e., the top layer) view. Figure 8 The layout of the NWELL layer (i.e., the n-well layer) is shown. Figure 9This is the layout of the POLY layer (i.e., the polysilicon layer). In the chip, the TOP layer is the top view of the chip; the PWELL layer is the Core device PWELL; the NWELL layer is the Core device NWELL; the DIFF layer is the Active region; the POLY layer is the Poly gate; the PIMP layer is P+Implant; the NIMP layer is N+Implant; the SDPW layer is the SD PWELL; the SDNW layer is the SD NWELL; the TGOX layer is the Thick gate oxide; the DNW layer is the Deep NWELL; and the SAB layer is Silicide. The layers are: block (silicide barrier layer), CONT layer (Contact layer), MET1 layer (Metal1, first metal layer), VIA1 layer (Via1, first via layer), MET2 layer (Metal2, second metal layer), VIA2 layer (Via2, second via layer), MET3 layer (Metal3, third metal layer), POR layer (Passivation open layer), and MTM layer (MIM capacitor).

[0093] The technical solution of this application has been described in detail above through specific embodiments. In the above embodiments, the descriptions of each embodiment have their own emphasis, and for parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0094] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the above-described inventive concept. For example, technical solutions formed by substituting the above-described features with (but not limited to) technical features with similar functions claimed in this application.

Claims

1. A circuit structure for a Hall current sensor chip, characterized in that, include: A Hall element, an amplifier connected to the Hall element, a first comparator connected to the amplifier, a second comparator connected to the first comparator, and a programmer connected to the second comparator; The Hall element is used to sense the detection current and generate a voltage signal related to the detection current; The amplifier is used to amplify the voltage signal to meet a set sensitivity requirement, and output the amplified voltage signal to the first comparator; The first comparator is used to compare the amplified voltage signal with a reference source, determine the integrity of the voltage signal, and output a corresponding comparison signal to the second comparator. The second comparator is used to compare the comparison signal with the reference signal, determine the amplitude of the comparison signal, and generate a corresponding output signal; A programmer for adjusting the output sensitivity and / or static output voltage of the second comparator.

2. The circuit structure of the Hall current sensor chip according to claim 1, characterized in that, Also includes: The circuit consists of a wire circuit, a first voltage regulator, a second voltage regulator, and a temperature sensor. The wire circuit serves as the path through which the detected current flows; The first voltage regulator is used to provide a first power supply voltage to the Hall element, the amplifier, the first comparator, the second comparator and the temperature sensor, and adjust the first power supply voltage according to the temperature compensation signal provided by the temperature sensor; A second voltage regulator is used to provide a second power supply voltage to the programmer; A temperature sensor is used to provide a temperature compensation signal to the first voltage regulator and to control the first voltage regulator to stop providing the first power supply voltage when the operating ambient temperature exceeds the set range.

3. The circuit structure of the Hall current sensor chip according to claim 1, characterized in that, The Hall element includes a first Hall element and a second Hall element, and the voltage signal is a differential voltage signal, which includes a high-level signal generated by the first Hall element and a low-level signal generated by the second Hall element.

4. The circuit structure of the Hall current sensor chip according to claim 3, characterized in that, The amplifier includes: A first amplifier, connected between the first Hall element and the first comparator, is used to amplify the high-level signal; A second amplifier, connected between the second Hall element and the first comparator, is used to amplify the low-level signal.

5. The circuit structure of the Hall current sensor chip according to claim 4, characterized in that, The first comparator uses the complete signal from the previous stage as its reference source, and the first comparator is further used for: The amplified high-level signal is compared with a reference source to determine signal integrity, identify signal correctness, and output a first comparison signal; and The amplified low-level signal is compared with the reference source to determine signal integrity and correctness, and a second comparison signal is output.

6. The circuit structure of the Hall current sensor chip according to claim 5, characterized in that, The reference signal used by the second comparator includes: The first reference signal from the programmer; and / or The second reference signal is generated by dividing the second comparison signal by a voltage divider capacitor.

7. The circuit structure of the Hall current sensor chip according to claim 6, characterized in that, When the refresh rate and amplitude of the first reference signal are both greater than those of the second reference signal, the second comparator compares the first reference signal with the first comparison signal to generate the output signal.

8. The circuit structure of the Hall current sensor chip according to claim 6, characterized in that, When the program is not burned to the programmer, the second comparator compares the second reference signal with the first comparison signal to generate the output signal.

9. The circuit structure of the Hall current sensor chip according to claim 1, characterized in that, The adjustable range of the static output voltage is 2.5V±0.2V or 50% of the power supply voltage, and the adjustable range of the output sensitivity is 1.8~30mV / Gs.

10. A Hall current sensor chip, characterized in that, The circuit structure includes the Hall current sensor chip as described in any one of claims 1-9.

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