Hall resistance network and method for forming the same

Abstract

The application relates to the field of semiconductor integrated circuit design and manufacturing, in particular to a Hall resistance network and a forming method thereof. The Hall resistance network at least comprises a first Hall element and a Hall compensation network, the first Hall element and the Hall compensation network are connected in series, the Hall compensation network is used for compensating temperature drift of the first Hall element in a constant voltage driving mode, and the Hall compensation network at least comprises a second Hall element. The direction of a resistance temperature coefficient of the second Hall element is opposite to the direction of a resistance temperature coefficient of the first Hall element, and the resistance values of the first Hall element and the second Hall element are not equal. The Hall resistance network has the advantages of low cost and simple manufacturing, can realize low temperature drift in the constant voltage driving mode without increasing additional circuit design, and can be applied to the field of high-precision sensing with low temperature drift.

Description

Technical Field

[0001] This application relates to the field of semiconductor integrated circuit design and manufacturing, specifically to a Hall resistor network and a method for forming the same. Background Technology

[0002] A Hall element is a semiconductor device based on the Hall effect, widely used in various electronic devices and systems. However, the output characteristics of a Hall element (such as Hall voltage and sensitivity) drift with temperature changes, a phenomenon known as Hall temperature drift.

[0003] In existing technologies, temperature compensation is mainly achieved by designing closed-loop circuits to collect temperature changes, designing positive (negative) temperature coefficient voltage generator circuits to bias Hall elements, introducing temperature coefficient resistors or Zener diodes into the circuit, and using external heat dissipation devices, thereby compensating for Hall temperature drift. However, reducing temperature drift through circuit design has drawbacks: it requires significant resources for circuit design, is highly complex, involves large chip areas, and is costly. While adding external heat sinks can improve temperature drift to some extent, it is not suitable for high-precision sensing applications with low temperature drift. Summary of the Invention

[0004] To address the aforementioned issues, this application provides a Hall resistor network and its formation method. This Hall resistor network not only provides temperature compensation for Hall elements, thereby improving Hall temperature drift and enabling the Hall element to output a Hall voltage with low temperature drift, but also features a simple and low-cost manufacturing process. Furthermore, it is suitable for high-precision sensing applications with low temperature drift under constant voltage drive without requiring additional circuit design.

[0005] On one hand, embodiments of this application provide a Hall resistor network, which includes at least a first Hall element and a Hall compensation network, wherein the first Hall element and the Hall compensation network are connected in series;

[0006] The Hall compensation network is used to compensate for the temperature drift generated by the first Hall element in constant voltage driving mode, and the Hall compensation network includes at least a second Hall element;

[0007] The direction of the temperature coefficient of resistance of the second Hall element is opposite to that of the temperature coefficient of resistance of the first Hall element, and at a preset temperature, the resistance values ​​of the first Hall element and the second Hall element are not equal.

[0008] Furthermore, the first Hall element is either a gallium arsenide Hall element or an indium antimonide Hall element, and the Hall compensation network includes at least one of a gallium arsenide Hall element or an indium antimonide Hall element.

[0009] The temperature coefficient of resistance of the gallium arsenide Hall effect sensor is positive, while the temperature coefficient of resistance of the indium antimonide Hall effect sensor is negative.

[0010] Furthermore, the Hall compensation network also includes a second resistor network, which includes at least a third Hall element and a fourth Hall element, and the third Hall element and the fourth Hall element are connected in parallel.

[0011] The second resistor network and the second Hall element are connected in series at both ends of the first Hall element.

[0012] Furthermore, at the preset temperature, the resistance values ​​of the first Hall element, the second Hall element, the third Hall element, and the fourth Hall element are not equal.

[0013] Furthermore, the direction of the temperature coefficient of resistance of the third Hall element is the same as the direction of the temperature coefficient of resistance of the first Hall element; the direction of the temperature coefficient of resistance of the fourth Hall element is the same as the direction of the temperature coefficient of resistance of the second Hall element.

[0014] Furthermore, the Hall compensation network also includes a fifth Hall element connected in parallel with the second Hall element;

[0015] The direction of the temperature coefficient of resistance of the fifth Hall element is the same as that of the temperature coefficient of resistance of the first Hall element; and at the preset temperature, the resistance values ​​of the fifth Hall element, the first Hall element, and the second Hall element are not equal.

[0016] Furthermore, at the preset temperature, the resistance value of the first Hall element is greater than the resistance value of the Hall compensation network.

[0017] Furthermore, the operating temperature range of the first Hall element is -40℃ to 150℃.

[0018] Furthermore, the Hall resistor network also includes a positive input power supply port, a negative input power supply port, a positive output port of the Hall voltage, and a negative output port of the Hall voltage;

[0019] The positive output port and the negative output port of the Hall voltage are disposed on the first Hall element;

[0020] The positive input power supply port and the negative input power supply port are respectively connected to the two ends of the circuit formed by the series connection of the first Hall element and the Hall compensation network.

[0021] On the other hand, embodiments of this application also provide a method for forming a Hall resistor network, the method comprising:

[0022] A thin film structure corresponding to a second Hall element is epitaxially grown on the thin film structure corresponding to the first Hall element.

[0023] The aspect ratio of the first Hall element is determined based on the resistance value of the first Hall element, and the aspect ratio of the second Hall element is determined based on the resistance value of the second Hall element in the Hall compensation network.

[0024] Based on the aspect ratio of the first Hall element and the aspect ratio of the second Hall element, the thin film structure corresponding to the first Hall element and the thin film structure corresponding to the second Hall element are selectively etched to include the thin film structure forming the first Hall element and the second Hall element.

[0025] The thin film structure is subjected to metal evaporation and lead interconnection to connect the first Hall element and the second Hall element, thereby obtaining the Hall resistor network.

[0026] On the other hand, this application provides an integrated circuit, which includes the Hall resistor network described above.

[0027] On the other hand, this application provides an electronic device comprising an electronic component fabricated using the aforementioned Hall resistor network or the method for forming a Hall resistor network. This electronic device may include any electronic component such as integrated circuits or electronic devices. Because the magnetic field detection device exhibits superior performance, the performance of the electronic device is consequently improved.

[0028] This application provides a Hall resistor network and its formation method. The Hall resistor network includes at least a first Hall element and a Hall compensation network, which are connected in series. The Hall compensation network is used to compensate for the temperature drift generated by the first Hall element in constant voltage driving mode. The Hall compensation network includes at least a second Hall element. The direction of the temperature coefficient of resistance of the second Hall element is opposite to that of the first Hall element, and the resistance values ​​of the first and second Hall elements are not equal. By setting a second Hall element in the Hall compensation network with a direction opposite to that of the first Hall element, the Hall resistor network generates a temperature drift with the opposite trend to that of the first Hall element, thereby achieving temperature compensation for the first Hall voltage in constant voltage driving mode. This allows the first Hall element to output a Hall voltage with low temperature drift. The Hall resistor network has the advantages of low cost and simple fabrication, achieving low temperature drift under constant voltage driving without the need for additional circuit design, and can be applied to high-precision sensing fields with low temperature drift. Attached Figure Description

[0029] To more clearly illustrate the technical solutions and advantages in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This application provides a schematic diagram of the structure of a first type of Hall resistor network.

[0031] Figure 2 This application provides a schematic diagram of the structure of a second type of Hall resistor network.

[0032] Figure 3 This application provides a schematic diagram of the structure of a third type of Hall resistor network.

[0033] Figure 4 This is a schematic diagram of a Hall resistor network composed of GaAs and InSb connected in series to compensate for GaAs Hall effect, provided in an embodiment of this application.

[0034] Figure 5 This is a schematic diagram of applying a constant voltage power supply to network 1 to achieve temperature compensation of GaAs Hall effect, provided in an embodiment of this application.

[0035] Figure 6 This is a schematic diagram of a GaAs Hall effect compensation method using a resistor network composed of GaAs and InSb, provided in an embodiment of this application.

[0036] Figure 7 This is a schematic diagram of applying a constant voltage power supply to network 2 to achieve temperature compensation of GaAs Hall effect, provided in an embodiment of this application.

[0037] Figure 8 This is a schematic diagram of a resistor network composed of GaAs and InSb to compensate for InSb Hall effect, provided in an embodiment of this application.

[0038] Figure 9 This is a schematic diagram illustrating temperature compensation of InSb Hall effect by applying a constant voltage power supply to network 3, as provided in an embodiment of this application.

[0039] Figure 10 This is a schematic flowchart illustrating a method for forming a Hall resistor network according to an embodiment of this application.

[0040] The following are Figures 1-3 The reference numerals in the attached figures are explained as follows:

[0041] 101 - First Hall element; 102 - Second Hall element; 103 - Positive output port of Hall voltage; 104 - Negative output port of Hall voltage; 105 - Positive input power supply port; 106 - Negative input power supply port; 107 - Third Hall element; 108 - Fourth Hall element; 109 - Fifth Hall element. Detailed Implementation

[0042] The following provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of elements and configurations are described below in a simplified manner. Of course, these elements and configurations are merely examples and are not intended to be limiting. For example, the formation of a first feature above or on a second feature in the following description may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed between the first and second features, such that the first and second features are not in direct contact. Furthermore, references to numbers and / or letters may be repeated in various instances throughout this application. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0043] Additionally, spatial relative terms, such as “below,” “under,” “lower,” “above,” “upper,” “front,” “back,” “above,” and similar terms, may be used in this application for ease of description to describe the relationship between one element or feature as illustrated in the figures and another element(s). Spatial relative terms are intended to cover different orientations in the use or operation of the apparatus other than those depicted in the figures.

[0044] This application provides a Hall resistor network, which includes at least a first Hall element 101 and a Hall compensation network, wherein the first Hall element 101 and the Hall compensation network are connected in series.

[0045] The Hall compensation network is used to compensate for the temperature drift generated by the first Hall element 101 in constant voltage driving mode. The Hall compensation network includes at least a second Hall element 102. The direction of the temperature coefficient of resistance of the second Hall element 102 is opposite to the direction of the temperature coefficient of resistance of the first Hall element 101, and the resistance values ​​of the first Hall element 101 and the second Hall element 102 are not equal at a preset temperature.

[0046] In this embodiment, a first Hall element 101 is used as the Hall element to be compensated in the Hall resistor network. The Hall compensation network is used to compensate for the Hall temperature drift generated by the first Hall element 101 under constant voltage driving mode, thereby reducing the Hall temperature drift of the first Hall element 101. The Hall compensation network and the first Hall element 101 are connected in series, so that the thin film corresponding to the second Hall element 102 can be directly prepared on the surface of the thin film corresponding to the first Hall element 101. Then, the thin film structure is selectively etched according to the resistance value of the first Hall element 101 and the resistance value corresponding to the second Hall element 102 to obtain the first Hall element 101 and each Hall element in the Hall compensation resistor network. Compared with the traditional design of complex circuits for compensation, this Hall resistor network can achieve monolithic integration and small area, thereby simplifying the fabrication process and reducing the fabrication cost.

[0047] Figure 1 This is a circuit diagram of a Hall resistor network provided in an embodiment of this application, as shown below. Figure 1 As shown, the Hall resistor network includes a first Hall element 101 and a second Hall element 102. The Hall compensation network only includes the second Hall element 102. The first Hall element 101 and the second Hall element 102 are connected, and their aspect ratios are different, meaning their resistance values ​​are different at a preset temperature (25°C). The resistance temperature coefficients of the first Hall element 101 and the second Hall element 102 are in opposite directions; that is, when the first Hall element 101 has a positive resistance temperature coefficient, the second Hall element 102 has a negative resistance temperature coefficient; and when the first Hall element 101 has a negative resistance temperature coefficient, the second Hall element 102 has a positive resistance temperature coefficient. Thus, by using a series resistor compensation network to generate a current in the opposite direction to the temperature drift of the first Hall element 101's sensitivity, temperature compensation of the Hall voltage can be achieved. The statement that the resistance temperature coefficient of the Hall element is positive can also be expressed as the resistance of the Hall element having a positive temperature coefficient; the essential meaning is the same, both representing that the direction of the resistance temperature coefficient of any Hall element is positive. Furthermore, in this embodiment, the resistance temperature coefficient refers to the temperature coefficient of the input resistance.

[0048] Furthermore, when the Hall compensation network includes multiple Hall elements, it includes at least a second Hall element 102, and the direction of the resistance temperature coefficient of the second Hall element 102 is opposite to the direction of the resistance temperature coefficient of the first Hall element 101, and ensures that the output of the entire Hall compensation network has a temperature drift in the opposite direction to that of the first Hall element 101.

[0049] In this embodiment, the temperature coefficient of resistance of the Hall element refers to the temperature characteristic of the input resistance of the Hall element, representing the characteristic of the input resistance of the Hall element changing with temperature. The temperature coefficient of input resistance reflects the combined effect of the material resistivity and geometric dimensions changing with temperature, and it is determined solely by the temperature coefficient of resistance of the Hall element material. It is an inherent characteristic of the material, therefore the direction of the temperature coefficient of resistance of the input resistance is determined only by the material. The direction of the temperature coefficient of resistance of the Hall resistor refers to the sign of the temperature coefficient of resistance, i.e., a positive or negative temperature coefficient of resistance.

[0050] The resistance of a Hall element is R = ρL / (Wd), where ρ represents the material density of the Hall element, L is the length of the Hall element, W is the width of the Hall element, and d is the thickness of the Hall element. When the width-to-length ratio of the Hall element is designed to be different, at room temperature (25℃), since the material density and thickness are constant, the resistance value is determined by the width-to-length ratio. The resistance value is different when the width-to-length ratio is different.

[0051] In this embodiment, the Hall compensation network may consist of multiple Hall elements, which are connected in series and / or in parallel. The Hall compensation network and the first Hall element 101 are connected in series to form a Hall resistor network.

[0052] The specific compensation principle is explained below:

[0053] For Hall voltage, its Hall voltage can be determined by any of the following equations, and the two can be converted to each other:

[0054] (1) Hall voltage in constant voltage working mode ;

[0055] (2) Hall voltage in constant current operating mode ;

[0056] Where B is the magnetic flux density, I is the bias current of the Hall element, and S... i Sv represents the sensitivity of the Hall element in constant current operating mode, Sv represents the sensitivity of the Hall element in constant voltage operating mode, V represents the bias voltage of the Hall element, and Uf represents the sensitivity of the Hall element in constant voltage operating mode. Hi U is the Hall voltage in constant current operating mode. Hv This is the Hall voltage under constant voltage operating mode.

[0057] The formula for calculating the Hall temperature drift is as follows:

[0058] ;

[0059] In the above formula, Temp Drift is the Hall temperature drift, with the unit being ppm / ℃, △T is the operating temperature range of the Hall element, V(max) is the voltage value corresponding to the maximum temperature in the temperature curve of the Hall element, V(min) is the voltage value corresponding to the minimum temperature in the temperature curve of the Hall element, V(nominal) is the voltage value corresponding to the normal temperature (25℃), and 100000 is the conversion of ppm unit.

[0060] Therefore, if a current opposite to the temperature drift generated by the sensitivity of the first Hall element 101 is achieved through a Hall compensation network, the Hall voltage output by the first Hall element 101 can be temperature compensated.

[0061] It should be noted that for the same type of Hall element, the Hall voltage in its constant voltage and constant current operating modes can be converted to each other, i.e., B*I*S. i =B*V*Sv, and I=V / R. In this formula, Sv is related to the width-to-length ratio of the Hall element, and the resistance R of the Hall element is also related to the width-to-length ratio of the Hall element. i The temperature compensation principle of the Hall resistor network is explained using the Hall voltage in constant current mode, which is only related to the thickness of the Hall element (which can be considered constant under constant temperature). This is only for explanation of the principle, because constant current power supply mode is difficult to implement, while the Hall resistor network provided in this application embodiment can achieve a Hall voltage comparable to that in constant current mode under constant voltage power supply mode.

[0062] For a Hall element in constant current mode, since the bias voltage V is independent of temperature, while the resistance R of the Hall voltage is temperature-dependent, the current in the final Hall resistor network is temperature-dependent. A Hall compensation network is then used to compensate for the sensitivity S of the first Hall element 101 in constant current operating mode. i This allows the first Hall element 101 to output a Hall voltage with low temperature drift. For example, for a GaAs Hall element, its operating voltage range is -40℃ to 125℃, and it has a temperature drift of approximately 180ppm / ℃ in constant current mode. If the equivalent input resistance is made close to the 180ppm / ℃ temperature drift through a Hall compensation network, a current with the opposite temperature drift trend to that of the GaAs Hall element can be generated to compensate for the sensitivity temperature drift of the GaAs Hall element, thus achieving temperature compensation for the GaAs Hall element. For an InSb Hall element, its sensitivity S in constant current power supply mode is... i With a temperature drift of approximately 1430 ppm / ℃, temperature compensation of the InSb Hall effect can be achieved by generating a current with the opposite temperature drift trend through a Hall compensation network to compensate for the temperature drift of its sensitivity.

[0063] For the same Hall element, S i / R=Sv, as explained above, Si The temperature does not change when the temperature is constant, and R is only related to temperature. Therefore, in constant voltage power supply mode, its temperature drift is also only related to temperature. By outputting a temperature drift with the opposite trend to that of the first Hall element 101 through the Hall compensation network, temperature compensation is achieved. Therefore, the temperature drift of the first Hall element 101 in constant voltage power supply mode is finally improved, so that its output temperature drift is comparable to that in constant current working mode, making it applicable to the field of high-precision sensing with low temperature drift.

[0064] This embodiment of the application sets a second Hall element 102 in the Hall compensation network with a direction opposite to that of the temperature coefficient of resistance of the first Hall element 101. This causes the Hall compensation network to generate a current with a temperature drift trend opposite to that of the constant current sensitivity of the first Hall element 101, thereby achieving temperature compensation for the Hall voltage output by the first Hall element in constant current drive mode. This allows the first Hall element 101 to output a Hall voltage with low temperature drift. Moreover, this Hall resistor network has the advantages of low cost and simple manufacturing. It enables the Hall element to achieve low temperature drift under constant voltage drive without the need for additional circuit design, and can be applied to the field of high-precision sensing with low temperature drift.

[0065] In an optional embodiment, the first Hall element 101 is either a gallium arsenide Hall or an indium antimonide Hall, and the Hall compensation network includes at least one of a gallium arsenide Hall or an indium antimonide Hall; the temperature coefficient of resistance of the gallium arsenide Hall is positive, and the temperature coefficient of resistance of the indium antimonide Hall is negative.

[0066] For example, the Hall resistor network described above can improve the Hall temperature drift of typical Hall elements, such as gallium arsenide Hall (GaAs Hall) or indium antimonide Hall (InSb Hall), wherein the input resistance of GaAs Hall has a positive temperature coefficient, while the input resistance of InSb Hall has a negative temperature coefficient. The first Hall element 101 is one of GaAs Hall and InSb Hall, and the Hall compensation network includes at least one of GaAs Hall and InSb Hall. Specifically, because the Hall compensation network includes at least a second Hall element 102, and the direction of the resistance temperature coefficient of the second Hall element 102 is opposite to that of the first Hall element 101, therefore, when the first Hall element 101 is a GaAs Hall, the Hall compensation network includes at least an InSb Hall; when the first Hall element 101 is an InSb Hall, the Hall compensation network includes at least a GaAs Hall. In this way, it is possible to use InSb Hall to compensate for the Hall temperature drift of GaAs Hall, or use GaAs Hall to compensate for the Hall temperature drift of InSb Hall, and use Hall element to compensate for the temperature of another Hall element with opposite resistance temperature coefficient. This can achieve low temperature drift under constant voltage drive without designing complex circuit structure or external heat dissipation device.

[0067] In an optional embodiment, the Hall compensation network further includes a second resistor network, which includes at least a third Hall element 107 and a fourth Hall element 108, and the third Hall element 107 and the fourth Hall element 108 are connected in parallel; the second resistor network and the second Hall element 102 are respectively connected in series at both ends of the first Hall element 101.

[0068] In an optional embodiment, at a preset temperature, the resistance values ​​of the first Hall element 101, the second Hall element 102, the third Hall element 107, and the fourth Hall element 108 are not equal.

[0069] In an optional embodiment, the direction of the temperature coefficient of resistance of the third Hall element 107 is the same as the direction of the temperature coefficient of resistance of the first Hall element 101; and the direction of the temperature coefficient of resistance of the fourth Hall element 108 is the same as the direction of the temperature coefficient of resistance of the second Hall element 102.

[0070] like Figure 2 As shown in the figure, this application embodiment also provides a circuit diagram of a second type of Hall resistor network. This Hall resistor network includes a first Hall element 101 and a Hall compensation network. The Hall compensation network includes a second Hall element 102 and a second resistor network. The second resistor network contains a third Hall element 107 and a fourth Hall element 108, which are connected in parallel. Further, the second resistor network and the second Hall element 102 are respectively connected in series across the two ends of the first Hall element 101. Thus, a Hall resistor network composed of multiple Hall elements connected in series and parallel is formed. This allows for temperature compensation of the first Hall element 101 using multiple series-parallel Hall elements. By applying a constant voltage, a current with a temperature drift opposite to the temperature drift trend of the first Hall element 101 is generated, thereby achieving temperature compensation of the Hall voltage. Compared to using a single Hall element to compensate for the temperature of the first Hall element 101, using multiple Hall elements connected in series and parallel to construct a more complex Hall compensation network further improves the temperature compensation effect, enabling the first Hall element 101 to output a Hall voltage with lower temperature drift.

[0071] Optionally, the second resistor network may include more Hall elements, such as 3-5, as long as at least one of them has the same direction as the temperature coefficient of resistance of the first Hall element 101.

[0072] Furthermore, to ensure the temperature compensation effect, the resistance values ​​of the first Hall element 101, the second Hall element 102, the third Hall element 107, and the fourth Hall element 108 are not equal at a preset temperature; that is, the aspect ratios of each Hall element in the Hall resistor network are different. Here, the preset temperature refers to room temperature (25°C).

[0073] To reduce costs and simplify the manufacturing process, the third Hall element 107 and the first Hall element 101 can be made of the same material, and the fourth Hall element 108 and the second Hall element 102 can be made of the same material. This ensures that the temperature coefficient of resistance of the third Hall element 107 and the first Hall element 101 are in the same direction, and the temperature coefficient of resistance of the fourth Hall element 108 and the third Hall element 107 are in the same direction. Furthermore, by using series and parallel connections and adjusting the resistance values, the temperature drift of the Hall compensation network output can be altered, thereby achieving better compensation for the Hall voltage output by the first Hall element 101. Compared to... Figure 1 The structure, Figure 2 Its structure is more complex, but by connecting multiple Hall elements in series and parallel, it can have a larger adjustment range for the resistance value of each Hall element, thus achieving a higher efficiency than other Hall elements. Figure 1 The corresponding structure has a better temperature drift reduction effect, and the addition of the third Hall element 107 and the fourth Hall element 108 does not introduce new material types, does not increase the cost of the Hall resistor network, and the series and parallel connection methods are simple to prepare.

[0074] In an optional embodiment, the Hall compensation network further includes a fifth Hall element 109 connected in parallel with the second Hall element 102;

[0075] The direction of the temperature coefficient of resistance of the fifth Hall element 109 is the same as that of the temperature coefficient of resistance of the first Hall element 101; and at the preset temperature, the resistance values ​​of the fifth Hall element 109, the first Hall element 101 and the second Hall element 102 are not equal.

[0076] This application also provides a third type of Hall resistor network, such as... Figure 3 As shown, the Hall resistor network includes a first Hall element 101 and a Hall compensation network. The Hall compensation network is formed by a fifth Hall element 109 and a second Hall element 102 connected in parallel. The direction of the temperature coefficient of resistance of the fifth Hall element 109 is the same as the direction of the temperature coefficient of resistance of the first Hall element 101. At room temperature, the resistance values ​​of the first Hall element 101, the second Hall element 102 and the fifth Hall element 109 are not equal.

[0077] Optionally, in order to reduce costs and simplify the manufacturing process, the fifth Hall element 109 and the first Hall element 101 are preferably the same type of Hall element, that is, the material of the fifth Hall element 109 and the material of the first Hall element 101 are the same.

[0078] In other embodiments, the Hall compensation network may further include n Hall elements with positive temperature coefficient of resistance and m Hall elements with negative temperature coefficient of resistance, the n Hall elements with positive temperature coefficient of resistance and the m Hall elements with negative temperature coefficient of resistance connected in parallel, n and m are both greater than or equal to 1 and are positive integers, and are Hall elements with the same temperature coefficient of resistance as the first Hall element 101, and whose materials are also the same as the first Hall element 101; preferably, n and m are both between 1 and 3, so that the first Hall element 101 can output a Hall voltage with a low Hall temperature drift, while also reducing cost and manufacturing difficulty.

[0079] In other embodiments, the Hall compensation network includes a Hall elements connected in series with the first Hall element 101, and b Hall elements connected in parallel to form a resistor network, and the resistor network is connected in series with the first Hall element 101, where a and b are positive integers greater than or equal to 1, and there is at least one Hall element in the Hall compensation network with a resistance temperature coefficient opposite to that of the first Hall element 101. Preferably, a and b are any positive integers between 1 and 3, and in the final Hall compensation network, the number of Hall elements with the same resistance temperature coefficient as the first Hall element 101 is less than or equal to the number of Hall elements with a resistance temperature coefficient opposite to that of the first Hall element 101.

[0080] In an optional embodiment, at the preset temperature, the resistance value of the first Hall element 101 is greater than the resistance value of the Hall compensation network. By setting the total resistance value of the Hall compensation network to be less than the resistance value of the first Hall element 101 at room temperature, temperature compensation for the first Hall element 101 can be achieved while ensuring that the first Hall element 101 occupies a dominant position in the Hall resistance network, and the Hall compensation network exists only as a compensation device.

[0081] In an optional embodiment, the operating temperature range of the first Hall element 101 is -40°C to 150°C. Preferably, the operating temperature range of the first Hall element 101 is -40°C to 125°C.

[0082] For example, the operating temperature range refers to the temperature range within which the Hall element can operate normally and maintain its performance indicators. Within this temperature range, the output characteristics of the Hall element (such as Hall voltage, sensitivity, etc.) can meet the design requirements, and the element itself will not be damaged or experience performance abnormalities due to excessively high or low temperatures. The method of temperature compensation for the first Hall element 101 using the Hall resistor network provided in this application embodiment can make the Hall voltage output of the Hall element more stable within its operating temperature range, thereby improving the application range of the Hall element, increasing the reliability of the system, and reducing maintenance costs.

[0083] In an optional embodiment, the Hall resistor network further includes a positive input power supply port 105, a negative input power supply port 106, a positive output port 103 for the Hall voltage, and a negative output port 104 for the Hall voltage.

[0084] The positive output port 103 and the negative output port 104 of the Hall voltage are disposed on the first Hall element 101;

[0085] The positive input power supply port 105 and the negative input power supply port 106 are respectively connected to the two ends of the circuit formed by the first Hall element 101 and the Hall compensation network connected in series.

[0086] In the embodiments of this application, such as Figures 1-3 As shown, the Hall resistor network also includes a power supply port and a Hall voltage output port, such as... Figures 1-3 As shown, the power supply ports include a positive input power supply port (V). BP )105 and negative input power supply port (V BN 106, Positive Input Power Supply Port (V) BP )105 and negative input power supply port (V BN The positive input power supply port 105 and the negative input power supply port 106 are respectively connected to the two ends of the circuit formed by the first Hall element 101 and the Hall compensation network. The circuit formed by the first Hall element 101 and the Hall compensation network can be called a Hall circuit. For example, the positive input power supply port 105 and the negative input power supply port 106 are respectively connected to the two ends of the Hall circuit. Figure 1 The Hall circuit shown includes a first Hall element 101 and a second Hall element 102. The positive input power supply port 105 and the negative input power supply port 106 are respectively connected to the first Hall element 101 and the second Hall element 102. Figure 2 The Hall circuit shown includes a second resistor network formed by a first Hall element 101, a second Hall element 102, a third Hall element 107, and a fourth Hall element 108. The positive input power supply port 105 is connected to the second Hall element in the Hall circuit, and the negative input power supply port 106 is connected to the second resistor network in the Hall circuit. The positive output port 103V of the Hall voltage...Hp and negative output port V Hn It is set on the first Hall element 101 and is used to output Hall voltage.

[0087] The technical effects of the above technical solution are illustrated below with specific embodiments:

[0088] Figure 4 This is a schematic diagram of a Hall resistor network composed of GaAs and InSb connected in series to compensate for GaAs Hall effect. This network is referred to here as Network 1. Figure 4 yes Figure 1 The illustrated Hall resistor network is a specific embodiment in which a single Hall element compensates for the first Hall element. Firstly, for... Figure 4 The reference numerals in the attached diagram are explained below. 1 represents the positive input power supply port V. BP1 2 represents the second Hall element Hall1, and 3 represents the positive output port V of the Hall voltage. Hp1 4 represents the first Hall element Hall2, and 5 represents the negative output port V of the Hall voltage. Hn1 6 represents the negative input power supply port V. BN1 .and Figure 5 This diagram illustrates temperature compensation of a GaAs Hall effect sensor by applying a constant voltage supply to network 1. 7 represents the power supply voltage VCC, and 8 is the grounding port.

[0089] Specifically, in Figure 4 and Figure 5 In the diagram, the first Hall element (i.e., the Hall element to be compensated) is a GaAs Hall element, and its resistance at 25°C is 11.226Rx (corresponding to...). Figure 4 Hall2 (numerical marker 4) uses InSb Hall ( Figure 4 The Hall element in the model (Hall 1) was compensated for, and at 25°C, the resistance of the InSb Hall element was Rx. For the GaAs Hall element in constant voltage mode, without compensation, it exhibited a temperature drift of 2200 ppm / °C. Compared to before, through... Figure 4 The Hall temperature drift output by the Hall resistor network described herein is approximately 846 ppm / ℃. In contrast, the compensated Hall voltage temperature drift is significantly reduced by 62%.

[0090] Figure 6 This is a schematic diagram of a resistive network composed of GaAs and InSb to compensate for the GaAs Hall effect, referred to here as network 2. Figure 6 yes Figure 2 One specific embodiment of the Hall resistor network shown utilizes multiple Hall resistors connected in series and parallel to compensate for the first Hall element. Figure 6 In the diagram, 9 and 16 are the positive input power supply ports V of network 2, respectively. BP2 and negative input power supply port VBN2 ; 10 is the InSb Hall element (Hall 3) in the resistor series structure, with a resistance of 0.035Rx at room temperature; 12 is the Hall element to be compensated in network 2, or the first Hall element, which is a GaAs Hall element (Hall 4), with a resistance of Rx at room temperature; 11 and 13 are the positive output ports V of the Hall voltage, respectively. hp2 and negative output port V hn2 ; 14 is the GaAs Hall effect sensor (Hall 5) in the parallel resistor structure, with a resistance of 0.7235 Rx at room temperature; 15 is the InSb Hall effect sensor (Hall 6) in the parallel resistor structure, with a resistance of 4.216 Rx at room temperature. Figure 7 A schematic diagram illustrating temperature compensation of GaAs Hall effect by applying a constant voltage power supply to network 2. Figure 7 In the diagram, 7 represents the power supply voltage VCC, 8 is the ground port, and 11 and 13 are the positive input power supply ports VCC and VCC of network 2, respectively. hp2 and negative input power supply port V hn2 .

[0091] Specifically, Network 2 is a further improvement on Network 1, and the Hall temperature drift output through Network 2 is approximately 230 ppm / ℃. In contrast, the GaAs Hall element with constant voltage output (without compensation) has a temperature drift of 2200 ppm / ℃. The compensated Hall voltage temperature drift is significantly reduced by 90%.

[0092] Figure 8 A schematic diagram of a resistive network composed of GaAs and InSb to compensate for the InSb Hall effect; referred to here as network 3. Figure 8 yes Figure 3 This is a specific embodiment of the Hall resistor network shown. 17 and 23 are the positive input power supply ports V of network 3, respectively. BP3 and negative input power supply port V BN3 ; 18 is an InSb Hall element (Hall 7), which is the Hall element to be compensated or the first Hall element, and its resistance at room temperature is Rx; 19 and 20 are the positive output ports V of the Hall voltage, respectively. hp3 and negative output port V hn3 ; 21 is the GaAs Hall (Hall 8) in the parallel resistor structure, with a resistance of 15.55 Rx at room temperature; 22 is the InSb Hall (Hall 9) in the parallel resistor structure, with a resistance of Rx at room temperature.

[0093] Figure 9 The diagram illustrates temperature compensation of the InSb Hall effect by applying a constant voltage supply to network 3. 7 represents the power supply voltage VCC, 8 is the ground port, and 19 and 20 are the positive input power supply ports VCC and VCC of network 3, respectively. hp3 and negative input power supply port Vhn3 The final output is a Hall voltage with low temperature drift.

[0094] Figure 8 The first Hall element in the Hall resistor network shown is an InSb Hall. In constant voltage operation mode, the InSb Hall has a temperature drift of 1430ppm / ℃ without temperature compensation. However, by using the structure shown in Network 3, the Hall temperature drift of the InSb Hall in constant voltage operation mode is about 1310ppm / ℃. In comparison, the Hall voltage temperature drift of the compensated InSb Hall is reduced by 100ppm, which is 8.2%.

[0095] It should be noted that the above embodiments are merely examples and do not represent all the technical solutions of this application. If necessary, the connection method of the Hall element can be changed, such as series or parallel connection, as well as the number of Hall elements, the type of Hall element, etc. This application does not make specific limitations in this regard.

[0096] In this embodiment, multiple Hall elements are first connected in series and parallel. A specific resistance value is used for each Hall element. Finally, a series-parallel resistor network is constructed. By applying a constant voltage, a current with a temperature drift opposite to the temperature drift trend of the Hall element to be compensated is generated, thereby achieving temperature compensation of the Hall voltage.

[0097] On the other hand, such as Figure 10 As shown in the embodiments of this application, a method for forming a Hall resistor network is also provided, the method comprising:

[0098] S10: Epitaxially grow a thin film structure corresponding to the second Hall element on the thin film structure corresponding to the first Hall element;

[0099] S30: Determine the aspect ratio of the first Hall element based on the resistance value of the first Hall element, and determine the aspect ratio of the second Hall element based on the resistance value of the second Hall element in the Hall compensation network;

[0100] S50: Based on the aspect ratio of the first Hall element and the aspect ratio of the second Hall element, selectively etch the thin film structure corresponding to the first Hall element and the thin film structure corresponding to the second Hall element to include the thin film structure forming the first Hall element and the second Hall element.

[0101] S70: Perform metal evaporation and lead interconnection on the thin film structure to connect the first Hall element and the second Hall element to obtain the Hall resistor network.

[0102] In this embodiment, the S10-S70 process is described with the Hall resistor network including only the first Hall element and the second Hall element. The process is similar when the Hall compensation network includes more Hall elements, the only difference being the number of Hall elements.

[0103] In the fabrication of the Hall resistor network, the thin film structure corresponding to the second Hall resistor is first grown on the thin film structure corresponding to the first Hall resistor using epitaxial growth. Then, based on the resistance value of each Hall element in the Hall resistor network at room temperature, the aspect ratio of each Hall element is determined. Based on the thin film structure corresponding to each Hall element and its aspect ratio, selective etching or selective etching is performed on the thin film structure corresponding to the first Hall element and the thin film structure corresponding to the second Hall resistor, respectively. Then, metal evaporation is performed to form a metal layer. Finally, wire interconnection is performed to electrically connect the first Hall elements. In the case of multiple Hall elements, the Hall elements are connected according to the designed Hall resistor network.

[0104] Using the methods described above, semiconductor processes such as thin film epitaxy, selective etching, metal evaporation, and internal wafer wiring can be used to create monolithically integrated Hall resistor networks. The fabrication methods are simple and cost-effective, which is conducive to their widespread use.

[0105] On the other hand, this application provides an integrated circuit, which includes the Hall resistor network described above.

[0106] On the other hand, this application provides an electronic device comprising an electronic component fabricated using the aforementioned Hall resistor network or the method for forming a Hall resistor network. This electronic device may include any electronic component such as integrated circuits or electronic devices. Because the magnetic field detection device exhibits superior performance, the performance of the electronic device is consequently improved.

[0107] The electronic devices in the embodiments of this application can be selected from any electronic products or devices such as mobile phones, PDAs, tablets, laptops, game consoles, televisions, Video Compact Discs (VCDs), Digital Video Discs (DVDs), navigators, cameras, camcorders, voice recorders, MP3 players, MP4 players, and PlayStation Portable (PSPs), or they can be any intermediate products of electronic devices including the aforementioned magnetic field detection devices.

[0108] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, it is not limited to those listed in the embodiments. Those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the essence and scope of the technical solutions of the present invention.

Claims

1. A Hall resistor network, characterized by, The Hall resistance network comprises at least a first Hall element and a Hall compensation network, and the first Hall element and the Hall compensation network are connected in series; The Hall compensation network is used for compensating temperature drift of the first Hall element in a constant voltage driving mode, and the Hall compensation network comprises at least a second Hall element; A direction of a temperature coefficient of resistance of the second Hall element is opposite to a direction of a temperature coefficient of resistance of the first Hall element, and resistance values of the first Hall element and the second Hall element are not equal at a preset temperature; The first Hall element is any one of a gallium arsenide Hall or an indium antimonide Hall, and the Hall compensation network comprises at least any one of a gallium arsenide Hall or an indium antimonide Hall; The direction of the temperature coefficient of resistance of the gallium arsenide Hall is positive, and the direction of the temperature coefficient of resistance of the indium antimonide Hall is negative.

2. The Hall resistor network of claim 1, wherein, The Hall compensation network further comprises a second resistance network, the second resistance network comprises at least a third Hall element and a fourth Hall element, and the third Hall element and the fourth Hall element are connected in parallel; The second resistance network and the second Hall element are respectively connected in series at two ends of the first Hall element.

3. The Hall resistor network of claim 2, wherein, At the preset temperature, resistance values of the first Hall element, the second Hall element, the third Hall element and the fourth Hall element are not equal.

4. The Hall resistor network of claim 2, wherein, A direction of a temperature coefficient of resistance of the third Hall element is the same as a direction of a temperature coefficient of resistance of the first Hall element, and a direction of a temperature coefficient of resistance of the fourth Hall element is the same as a direction of a temperature coefficient of resistance of the second Hall element.

5. The Hall resistor network of claim 1, wherein, The Hall compensation network further comprises a fifth Hall element connected in parallel with the second Hall element; A direction of a temperature coefficient of resistance of the fifth Hall element is the same as a direction of a temperature coefficient of resistance of the first Hall element, and resistance values of the fifth Hall element, the first Hall element and the second Hall element are not equal at the preset temperature.

6. The Hall resistor network according to any one of claims 1 to 5, characterized in that At the preset temperature, the resistance value of the first Hall element is greater than a resistance value of the Hall compensation network.

7. The Hall resistor network according to any one of claims 1 to 5, characterized in that A working temperature range of the first Hall element is -40℃ to 150℃.

8. The Hall resistor network according to any one of claims 1-5, characterized in that, The Hall resistance network further comprises a positive input power supply port, a negative input power supply port, a positive output port of a Hall voltage and a negative output port of the Hall voltage; The positive output port of the Hall voltage and the negative output port of the Hall voltage are arranged on the first Hall element; The positive input power supply port and the negative input power supply port are respectively connected at two ends of a circuit formed by the first Hall element and the Hall compensation network connected in series.

9. A method of forming a Hall resistor network as claimed in any one of claims 1 to 8, characterised in that, The forming method comprises: Epitaxially growing a thin film structure corresponding to a second Hall element on a thin film structure corresponding to a first Hall element; Determining a length-width ratio of the first Hall element according to a resistance value of the first Hall element, and determining a length-width ratio of the second Hall element according to a resistance value corresponding to the second Hall element in the Hall compensation network; and According to the aspect ratio of the first Hall element and the aspect ratio of the second Hall element, the thin film structure corresponding to the first Hall element and the thin film structure corresponding to the second Hall element are selectively etched to form the thin film structure of the first Hall element and the second Hall element; The thin film structure is subjected to metal evaporation treatment and wire interconnection treatment to connect the first Hall element and the second Hall element, thereby obtaining the Hall resistance network.

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