Target baffle and PVD equipment
By setting up target baffles in the PVD equipment to cover the non-effective sputtering areas at both ends of the target, the problems of uneven coating and dust deposition caused by the difference in magnetic field strength of the target are solved, and the cleanliness and transportation stability of the equipment are improved.
Patent Information
- Application Number
- CN202422977038.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2034-12-04
AI Technical Summary
In PVD equipment, the difference in magnetic field strength between the two ends of the target and the middle magnetic field leads to poor coating uniformity. Contamination of the back of the carrier plate and the transmission rollers, as well as dust deposition, affect the stability of carrier plate transportation and the life of the sealing ring.
In PVD equipment, target baffles are set to cover the non-effective sputtering areas at both ends of the target, including a first baffle and a second baffle, to block the dust generated during upward sputtering and prevent coating from being applied to the drive rollers, the back track of the carrier plate, and the non-load-bearing area.
It effectively blocks dust, prevents the coating from forming on the drive rollers and the back track of the carrier plate, reduces the cleaning frequency, extends the life of the sealing ring, and improves the stability of the carrier plate during transportation.
Smart Images
Figure CN223496589U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of photovoltaic manufacturing, and in particular to target baffles and PVD equipment. Background Technology
[0002] The transparent conductive film (TCO) of heterojunction solar cells is formed by physical vapor deposition (PVD) sputtering. PVD sputtering uses a rotating target, which is cylindrical and contains a stationary magnet. During PVD magnetron sputtering of the TCO film, the difference in magnetic field strength between the annular magnetic fields at both ends and the magnetic field in the middle of the target causes a significant difference in coating uniformity between the two ends and the middle, making adjustment difficult.
[0003] Typically, the magnetic field sputtering length of the target is longer than the actual effective sputtering area to reduce the influence of the annular magnetic field at both ends. The non-load-bearing areas at both ends of the carrier are correspondingly larger, and these areas fall within the sputtering region of the annular magnetic field at the ends. When depositing the silicon wafer upwards on the reverse side, the carrier passing between the cathode and the target causes the non-load-bearing area at the back end of the carrier and the transfer rollers to be constantly exposed to the sputtering area, contaminating the carrier and increasing the frequency of cleaning and maintenance. The magnetohydrodynamic (MHD) rollers are also coated during sputtering. Since this area is close to the plasma, some dust generated during sputtering also deposits on the MHD rollers. This dust affects the stability of carrier transport and reduces the service life of the transmission seals.
[0004] Therefore, how to provide a target baffle and PVD equipment to avoid depositing TCO film on the drive rollers, the back track of the carrier plate, and the non-load-bearing area, and to shield the dust generated during the upward sputtering process and eliminate its adverse effects, has become a technical problem that urgently needs to be solved in the industry. Summary of the Invention
[0005] To address the aforementioned problems in the prior art, this utility model proposes a target baffle, which is disposed between the target and the transmission roller in a PVD equipment. The target baffle includes a first baffle and a second baffle covering the non-effective sputtering areas at both ends of the target, and the length of the non-effective sputtering area ranges from 130 to 180 mm.
[0006] In one embodiment, the target material is a rotating target material in which a stationary magnet is disposed.
[0007] In one embodiment, the target material is fixed to the top wall of the PVD equipment by a bracket, and the target material is insulated from the top wall by a first support shielding plate and a second support shielding plate on both sides.
[0008] In one embodiment, the first baffle and the second baffle each include a blocking portion and a connecting portion perpendicular to the blocking portion, and the connecting portion is fixed to the first support shielding plate or the second support shielding plate by a fastener.
[0009] In one embodiment, the cross-section of the shielding portion is n-shaped or H-shaped.
[0010] In one embodiment, the fastener includes a plurality of matching bolts and nuts, the connecting portion has a plurality of first through holes, the first support shield plate or the second support shield plate has a plurality of second through holes, the plurality of bolts pass through the first through holes and the second through holes and are engaged with the nuts, thereby fixing the first baffle and the second baffle to the first support shield plate or the second support shield plate respectively.
[0011] In one embodiment, the fastener includes a plurality of fixing pins and a cotter pin passing through a pin hole at the top of the fixing pin. The plurality of fixing pins are respectively disposed on a first support shielding plate or a second support shielding plate. The connecting portion has a plurality of first through holes. After the plurality of fixing pins pass through the plurality of first through holes, the cotter pin passes through the pin hole at the top of the fixing pin, thereby fixing the first baffle and the second baffle respectively on the first support shielding plate or the second support shielding plate.
[0012] In one embodiment, the length of the target material ranges from 2000 to 2300 mm, and its outer diameter ranges from 150 to 160 mm. The length of the first baffle and the second baffle both range from 50 to 60 mm, and their widths are 10 to 30 mm larger than the outer diameter of the target material, with their widths ranging from 160 to 190 mm.
[0013] In one embodiment, the transmission roller is a magnetohydrodynamic transmission roller.
[0014] This utility model also discloses a PVD equipment, which includes an upward sputtering target and a drive roller. The drive roller is disposed above the target for conveying and supporting a carrier plate carrying a silicon wafer so that the silicon wafer faces downward to form a TCO film. A target baffle as described in any of the above claims is disposed between the target and the drive roller.
[0015] In one embodiment, the carrier plate is provided with a C-shaped track for the transmission roller. When the transmission roller conveys the carrier plate to the deposition position, the target baffle blocks the C-shaped track and the edge non-load-bearing area of the carrier plate.
[0016] Compared to existing technologies where the absence of a baffle between the upward-sputtering target and the drive roller in PVD equipment leads to the easy deposition of TCO film on the non-load-bearing areas of the drive roller and the carrier plate it supports, this invention features a target baffle positioned between the upward-sputtering target and the drive roller in the PVD equipment. This baffle includes a first baffle and a second baffle covering the non-effective sputtering areas at both ends of the target, with the length of the non-effective sputtering areas ranging from 130-180 mm. This invention avoids TCO film deposition on the drive roller, the back track of the carrier plate, and the non-load-bearing areas, and effectively shields against dust generated during upward sputtering, eliminating its adverse effects. Attached Figure Description
[0017] The above-described features and advantages of this invention can be better understood after reading the following detailed description of the embodiments of this disclosure in conjunction with the accompanying drawings. In the drawings, the components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.
[0018] Figure 1 This is a front view schematic diagram of a partial component structure of an embodiment of the PVD equipment of this utility model.
[0019] Figure 2 This is a partial three-dimensional structural diagram of an embodiment of the PVD equipment of this utility model.
[0020] Figure 3 This is a schematic diagram of the composition structure of an embodiment of the target baffle of this utility model.
[0021] Figure 4 for Figure 3 A schematic diagram of the installation structure of the target baffle. Detailed Implementation
[0022] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. Although the description of this utility model will be presented in conjunction with preferred embodiments, this does not mean that the features of this invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with the embodiments is to cover other options or modifications that may be derived based on the claims of this utility model. To provide a deep understanding of this utility model, many specific details will be included in the following description. This utility model may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this utility model, some specific details will be omitted in the description.
[0023] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0024] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described device must be manufactured or operated in a specific orientation; therefore, they should not be construed as limiting the scope of this invention.
[0025] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below may be referred to as the second component, region, layer, and / or part without departing from some embodiments of this utility model.
[0026] See Figure 1 as well as Figure 2 The two figures are a front view and a three-dimensional view of a partial component structure of an embodiment of the PVD equipment of this utility model, respectively. Figure 1 as well as Figure 2 As shown, the PVD equipment includes a target 1, a drive roller 2, a target baffle 3, support shielding plates 40 and 42, a bracket 5, a top wall 6, and a cathode assembly 7. The target 1 is sputtered upwards. The drive roller 2 is positioned above the target 1 to convey and support the carrier plate 8 carrying the silicon wafer so that the silicon wafer faces downwards to form a TCO film. The target baffle 3 is positioned between the target 1 and the drive roller 2. The support shielding plates 40 and 42 are positioned inside the bracket 5.
[0027] The carrier plate 8 is provided with a C-shaped track (not shown) for the transmission roller 2. When the transmission roller 2 conveys the carrier plate 8 to the deposition position, the target baffle 3 blocks the C-shaped track and the edge non-load-bearing area of the carrier plate 8.
[0028] See Figure 3 as well as Figure 4 See also Figure 1 as well as Figure 2 , Figure 3This is a schematic diagram of the composition structure of an embodiment of the target baffle of this utility model. Figure 4 for Figure 1 A schematic diagram of the installation structure of the target baffle. (See attached diagram.) Figures 1 to 4 As shown, target baffles 30 and 32 are disposed between the upwardly sputtered target 1 and the drive roller 2 in the PVD equipment. The target baffle 3 includes a first baffle 30 and a second baffle 32 covering the non-effective sputtering areas at both ends of the target 1. The length of the non-effective sputtering area ranges from 130 to 180 mm. The length of the target 1 ranges from 2000 to 2300 mm, and its outer diameter ranges from 150 to 160 mm. The length of the first baffle 30 and the second baffle 32 both range from 50 to 60 mm, and their widths are 10 to 30 mm larger than the outer diameter of the target, with a width range of 160 to 190 mm.
[0029] The target material 1 can be a rotating target material with a stationary magnet inside. The transmission roller 2 can be a magnetohydrodynamic transmission roller. The target material 1 is fixed to the top wall 6 of the PVD equipment by the bracket 5, and the target material 1 is insulated from the top wall 6 by the first support shielding plate 40 and the second support shielding plate 42 on both sides.
[0030] The first baffle and the second baffle each include a shielding portion and a connecting portion perpendicular to the shielding portion. The connecting portion is fixed to the first or second supporting shielding plate by a fastener. The cross-section of the shielding portion is n-shaped or H-shaped. Figure 3 as well as Figure 4 As shown, the first baffle 30 includes a blocking portion 300 and a connecting portion 302 perpendicular to the blocking portion 300. The connecting portion 302 is fixed to the first support shielding plate 40 by a fastener. The blocking portion 300 has an H-shaped cross-section. The structure of the second baffle 32 is the same as that of the first baffle 30, and will not be described again here.
[0031] In this embodiment, the fixing member 400 includes a plurality of fixing pins 402 and a cotter pin 404 passing through the pin hole at the top of the fixing pin 402. The plurality of fixing pins 402 are respectively disposed on the first support shielding plate 40 or the second support shielding plate 42. The connecting part 302 has a plurality of first through holes 3020. After the plurality of fixing pins 402 pass through the plurality of first through holes 3020, the cotter pin 404 passes through the pin hole at the top of the fixing pin 402, thereby fixing the first baffle 30 and the second baffle 32 respectively on the first support shielding plate 40 or the second support shielding plate 42. The cotter pin 404 may be an R-type pin.
[0032] In other embodiments of this utility model, the fixing member may include a plurality of matching bolts and nuts, the connecting part 302 is provided with a plurality of first through holes 3020, the first support shielding plate 40 or the second support shielding plate 42 is provided with a plurality of second through holes, the plurality of bolts pass through the first through holes and the second through holes and are engaged with the nuts, thereby fixing the first baffle 30 and the second baffle 32 on the first support shielding plate 40 or the second support shielding plate 42 respectively.
[0033] In summary, the target baffle of this invention is positioned between the upwardly sputtered target and the drive roller in a PVD equipment. It includes a first baffle and a second baffle covering the non-effective sputtering areas at both ends of the target, the length of which ranges from 130 to 180 mm. This invention avoids depositing a TCO film on the drive roller, the back track of the carrier plate, and the non-load-bearing area, and can shield the dust generated during upward sputtering and eliminate its adverse effects.
[0034] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein. The above embodiments are provided to those skilled in the art for implementing or using this invention. Those skilled in the art can make various modifications or changes to the above embodiments without departing from the inventive concept of this invention. Therefore, the scope of protection of this invention is not limited to the above embodiments, but should be the maximum scope conforming to the innovative features mentioned in the claims.
Claims
1. A target baffle, disposed between an upwardly sputtered target and a drive roller in a PVD apparatus, characterized in that, The target baffle includes a first baffle and a second baffle covering the non-effective sputtering areas at both ends of the target, and the length of the non-effective sputtering area ranges from 130 to 180 mm.
2. The target baffle according to claim 1, characterized in that, The target material is a rotating target material with a stationary magnet inside.
3. The target baffle according to claim 1, characterized in that, The target material is fixed to the top wall of the PVD equipment by a bracket, and the target material is insulated from the top wall by a first support shielding plate and a second support shielding plate on both sides.
4. The target baffle according to claim 3, characterized in that, The first baffle and the second baffle each include a shielding part and a connecting part perpendicular to the shielding part. The connecting part is fixed to the first support shielding plate or the second support shielding plate by a fastener. The cross-section of the shielding part is n-shaped or H-shaped.
5. The target baffle according to claim 4, characterized in that, The fastener includes a plurality of matching bolts and nuts. The connecting part has a plurality of first through holes. The first support shielding plate or the second support shielding plate has a plurality of second through holes. The plurality of bolts pass through the first through holes and the second through holes and are engaged with the nuts, thereby fixing the first baffle and the second baffle to the first support shielding plate or the second support shielding plate respectively.
6. The target baffle according to claim 4, characterized in that, The fastener includes multiple fixing pins and a cotter pin passing through the pin hole at the top of the fixing pin. The multiple fixing pins are respectively disposed on the first support shielding plate or the second support shielding plate. The connecting part is provided with multiple first through holes. After the multiple fixing pins pass through the multiple first through holes, the cotter pin passes through the pin hole at the top of the fixing pin, thereby fixing the first baffle and the second baffle to the first support shielding plate or the second support shielding plate respectively.
7. The target baffle according to claim 1, characterized in that, The length of the target material ranges from 2000 to 2300 mm, and its outer diameter ranges from 150 to 160 mm. The length of the first baffle and the second baffle both range from 50 to 60 mm, and their widths are 10 to 30 mm larger than the outer diameter of the target material, with a width range of 160 to 190 mm.
8. The target baffle according to claim 1, characterized in that, The transmission roller is a magnetohydrodynamic transmission roller.
9. A PVD apparatus comprising an upwardly sputtered target and drive rollers, the drive rollers being disposed above the target for conveying and supporting a carrier plate holding a silicon wafer so that the silicon wafer faces downward to form a TCO film, characterized in that, A target baffle as described in any one of claims 1 to 8 is provided between the target and the transmission roller.
10. The PVD equipment according to claim 9, characterized in that, The carrier plate is provided with a C-shaped track for the transmission roller. When the transmission roller conveys the carrier plate to the deposition position, the target baffle blocks the C-shaped track and the edge non-load-bearing area of the carrier plate.