Small integrated ion beam etching machine

Abstract

The utility model discloses a small-sized integrated ion beam etching machine, which particularly relates to the technical field of wafer etching and comprises a workbench, an L-shaped integrated cabinet and a process etching chamber. The process etching chamber is fixedly installed on the upper surface of the workbench. The bottom of the workbench is fixedly installed on the top of the L-shaped integrated cabinet. The gas path system is mounted in the L-shaped integrated cabinet; the air exhaust system is mounted on the process etching chamber; the process etching chamber comprises a vacuum cavity, a sample table assembly and a flip assembly. The flip cover assembly is installed at the upper end of the vacuum cavity, the flip cover assembly and the vacuum cavity are connected in a sealed mode through double rubber rings, and the sample table assembly is fixedly installed in the center of the flip cover assembly. According to the utility model, the flip cover assembly and the vacuum cavity are arranged, so that a higher vacuum degree can be obtained, and the minimum value of air pressure can reach 8 * 10 <-8 > mbar; and the PLC control panel and the ion source power supply are integrated in the L-shaped integrated cabinet, so that the occupied area of the whole equipment is effectively reduced.

Description

Technical Field

[0001] This utility model relates to the field of wafer etching technology, and more specifically, to a small integrated ion beam etching machine. Background Technology

[0002] Ion beam etching, also known as ion milling or ion sputtering etching, utilizes the principle of glow discharge to decompose gas (such as argon) into ions, and accelerates these ions through an electric field to give them enough energy to bombard the surface of the material being etched, thereby achieving the purpose of etching. This is a purely physical process that does not involve chemical reactions. However, most etching systems have a complex structure, occupy a large area, have a low degree of integration, and are complex to operate, making them unsuitable for university laboratories.

[0003] To achieve miniaturization of the ion beam etching machine, while ensuring process requirements are met, the various modular systems are integrated to a great extent, reducing the overall footprint of the equipment. An ergonomically designed operating table simplifies the interface, making it easy to move and operate, and more suitable for university experimental teaching. Therefore, a small integrated ion beam etching machine is proposed as a further improvement, aiming to achieve both high efficiency and miniaturization in teaching and research in universities and research institutes using this small integrated etching machine. Utility Model Content

[0004] In order to overcome the above-mentioned defects of the prior art, the embodiments of this utility model provide a small integrated ion beam etching machine to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution: a small integrated ion beam etching machine, the etching machine comprising: a worktable, an L-shaped integrated cabinet, a process etching chamber, an air extraction system, and a gas path system;

[0006] The process etching chamber is fixedly installed on the upper surface of the workbench, and the bottom of the workbench is fixedly installed on the top of the L-shaped integrated cabinet; the air supply system is installed inside the L-shaped integrated cabinet; and the air extraction system is installed on the process etching chamber.

[0007] The etching chamber includes: a vacuum chamber, a sample stage assembly, and a flip-top assembly;

[0008] The flip-top assembly is installed at the upper end of the vacuum chamber, and the flip-top assembly and the vacuum chamber are sealed together by double rubber rings. The sample stage assembly is fixedly installed at the center of the flip-top assembly.

[0009] Furthermore, the process etching chamber also includes: an ultra-high vacuum gate valve and an ion source;

[0010] The ultra-high vacuum slide valve is fixedly connected to the side of the vacuum chamber;

[0011] The sample stage assembly includes: a rotary motor and a sample stage.

[0012] The rotary motor is fixedly mounted on the upper surface of the flip-top assembly, and the sample stage located inside the vacuum chamber is fixedly mounted on the end of the output shaft of the rotary motor that passes through the flip-top assembly.

[0013] The ion source is located inside the vacuum chamber, and the beam of the ion source is directed toward the sample stage.

[0014] Furthermore, a PLC control panel is fixedly installed on the front of the top of the L-shaped integrated cabinet, and an ion source power supply is fixedly installed inside the L-shaped integrated cabinet and below the PLC control panel.

[0015] Furthermore, two single-cylinder double-acting cylinders are fixedly installed on both sides of the flip-top assembly. The other ends of the two single-cylinder double-acting cylinders are fixedly installed on the workbench via connecting bases. The air passage connectors of the two single-cylinder double-acting cylinders are connected to the intake throttle valve and the valve island via T-type tee.

[0016] Furthermore, a molecular pump is fixedly installed on the other side of the ultra-high vacuum gate valve, and the molecular pump is connected to the pumping system.

[0017] Furthermore, an observation window and a vacuum gauge are fixedly installed on the front and back of the vacuum chamber, respectively.

[0018] The technical effects and advantages of this utility model are as follows:

[0019] Compared with existing technologies, by setting up a single-cylinder double-acting cylinder, it is easier to achieve synchronization of the single-cylinder double-acting cylinder since both sides of the cylinder receive air from the same air pipe, resulting in smoother lifting and lowering of the flip-top assembly. Furthermore, by incorporating the flip-top assembly and a vacuum chamber, it is easier to obtain a higher vacuum level, with a minimum air pressure as low as 8*10. -8 mbar; by integrating the PLC control panel and ion source power supply into the L-shaped integrated cabinet, the overall footprint of the equipment is effectively reduced. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the overall structure of this utility model.

[0021] Figure 2 This is a side view of the overall structure of this utility model.

[0022] Figure 3 This is a schematic diagram of the overall structure of this utility model without the vacuum cavity.

[0023] Figure 4 This is a side view of the present invention, showing the removal of the vacuum chamber.

[0024] Figure 5 This is a front view of the present invention, which removes the vacuum chamber.

[0025] Figure 6 This is a top view of the overall structure of this utility model.

[0026] The attached figures are labeled as follows:

[0027] 1. Workbench;

[0028] 2. L-shaped integrated cabinet; 21. PLC control panel; 22. Ion source power supply;

[0029] 3. Process etching chamber;

[0030] 31. Vacuum cavity;

[0031] 32. Sample stage assembly; 321. Rotary motor; 322. Sample stage;

[0032] 33. Flip-top assembly; 34. Ultra-high vacuum slide gate valve; 35. Ion source; 36. Single-cylinder double-acting cylinder;

[0033] 37. Molecular pump; 38. Observation window; 39. Vacuum gauge;

[0034] 4. Press the knob firmly. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0036] As attached Figure 1-6 The small integrated ion beam etching machine shown includes: a worktable 1, an L-shaped integrated cabinet 2, a process etching chamber 3, an exhaust system, and a gas path system;

[0037] The process etching chamber 3 is fixedly installed on the upper surface of the worktable 1. Specifically, the process etching chamber 3 is fixed to the worktable 1 by means of mounting plates on both sides.

[0038] The bottom of the workbench 1 is fixedly installed on the top of the L-shaped integrated cabinet 2; the gas path system is installed inside the L-shaped integrated cabinet 2; then, the mass flow controller, diaphragm valve and the air inlet of the ion source 36 in the process etching chamber 3 are connected through a vacuum bellows, and controlled by the PLC control panel 21 to realize the on and off of the process gas of the ion source 36; and the ion source 36 adopts the Kaufman ion source.

[0039] The air extraction system is installed on the process etching chamber 3.

[0040] Among them, the L-shaped integrated cabinet 2 is integrated with the process etching chamber 3, the air extraction system and the air circuit system into one unit, which is convenient to move and occupies a small area;

[0041] The process etching chamber 3 includes: a vacuum chamber 31, a sample stage assembly 32, and a flip-top assembly 33;

[0042] The flip-top assembly 33 is installed at the upper end of the vacuum chamber 31;

[0043] If the flip-top assembly 33 is a flange, then the flip-top assembly 33 at the upper end of the vacuum chamber 31 is designed with a side-extraction channel in the middle of the double sealing groove. It is welded to the pipeline through the side of the flip-top assembly 33 and connected to the pumping system through a vacuum bellows, which facilitates obtaining a higher vacuum level; the minimum air pressure can reach 8*10 -8 mbar.

[0044] Furthermore, the flip cover assembly 33 and the vacuum chamber 31 are connected by a double rubber ring seal to achieve a vacuum seal.

[0045] The sample stage assembly 32 is fixedly installed at the center of the flip-top assembly 33.

[0046] In a preferred embodiment, as shown in the appendix Figure 1-6 As shown, the process etching chamber 3 includes: an ultra-high vacuum gate valve 34 and an ion source 35;

[0047] The ultra-high vacuum slide gate valve 34 is fixedly connected to the side of the vacuum chamber 31. The sample stage assembly 32 includes a rotary motor 321 and a sample stage 322.

[0048] The rotary motor 321 is fixedly mounted on the upper surface of the flip-top assembly 33, and the sample stage 322 located in the vacuum chamber 31 is fixedly mounted on the end of the output shaft of the rotary motor 321 that passes through the flip-top assembly 33.

[0049] Among them, the rotation speed of the sample stage 322 is adjustable by using a rotary motor 321; rotation helps to improve etching uniformity.

[0050] The ion source 35 is located inside the vacuum chamber 31, and the beam of the ion source 35 is directed toward the sample stage 322.

[0051] In a preferred embodiment, as shown in the appendix Figure 1-6As shown, a PLC control panel 21 is fixedly installed on the front of the top of the L-shaped integrated cabinet 2, and an ion source power supply 22 is fixedly installed inside the L-shaped integrated cabinet 2 and below the PLC control panel 21. This allows the PLC control panel 21 and the ion source power supply 22 to be integrated inside the L-shaped integrated cabinet 2, effectively reducing the overall footprint of the equipment. Furthermore, the vacuum breaking process is automated through the control panel 21, making vacuum breaking more convenient and faster.

[0052] In a preferred embodiment, as shown in the appendix Figure 1-6 As shown, two single-cylinder double-acting cylinders 36 are fixedly installed on both sides of the flip cover assembly 33.

[0053] In the embodiment of the flip cover assembly 33, the flange is used as the flip cover assembly 33. The flange has threaded holes at 20mm off the center axis on both sides. The single-cylinder double-acting cylinder 36 is connected to the connecting shaft through the bearing at the end of the joint rod of the stainless steel fish-eye joint.

[0054] The other ends of the two single-cylinder double-acting cylinders 36 are fixedly mounted on the workbench 1 via connecting bases. The air passage connectors of the two single-cylinder double-acting cylinders 36 are connected to the intake throttle valve and the valve island via T-type three-way valves. This allows the throttle valve to be used to adjust the lifting and lowering of the flip-top assembly 33, and the valve island to control the intake and cut-off of the single-cylinder double-acting cylinders 36, thereby realizing the opening and closing of the flip-top assembly 33.

[0055] Among them, the design of the single-cylinder double-acting cylinder 36, with air entering and exiting from the same air pipe on both sides, makes it easier to achieve synchronization of the single-cylinder double-acting cylinder 36, and the lifting and lowering of the flip-top assembly 33 is more stable.

[0056] In a preferred embodiment, as shown in the appendix Figure 1-6 As shown, a molecular pump 37 is fixedly installed on the other side of the ultra-high vacuum gate valve 34, and the molecular pump 37 is connected to the pumping system.

[0057] Among them, the molecular pump 37 is connected to the mechanical pump through a vacuum bellows and a pneumatic angle valve to form a pumping system; a vacuum breaking valve assembly is designed in front of the pneumatic angle valve to realize the automation of vacuum breaking through PLC control; and the mechanical pump is placed under the workbench 1 by a mounting plate, with shock-absorbing rubber padding between the mechanical pump and the mounting plate to eliminate the impact of mechanical pump vibration on the equipment.

[0058] In a preferred embodiment, as shown in the appendix Figure 1-6 As shown, an observation window 38 and a vacuum gauge 39 are fixedly installed on the front and back of the vacuum chamber 31, respectively, so as to enable observation of the vacuum chamber 31 and detection of the vacuum level.

[0059] The working principle of this utility model is as follows: When etching with a small integrated ion beam etching machine, first unscrew the clamping knob 4, control the valve island through the PLC control panel 21, and then control the air supply of the single-cylinder double-acting cylinder 36. The flip-top assembly 33 rises, placing the sample on the sample stage 322. Then, the control valve island is disconnected, cutting off the air supply to the single-cylinder double-acting cylinder 36, closing the flip-top assembly 33, and tightening the clamping knob 4. The etching process chamber is evacuated through the one-button start button on the control interface of the PLC control panel 21.

[0060] When the gas pressure inside the vacuum chamber 31 reaches 30 Pa, the molecular pump 37 automatically starts; the vacuum level is observed through the vacuum gauge (39) until the gas pressure drops to the vacuum level required for the process (minimum 8 × 10⁻⁶ Pa). -8 Turn on the cooling water switch (mbar), and carefully observe the status of the water flow sensor switch. Once it is in the on state, proceed to the next step. Control the rotation of the sample stage 322 via the rotary motor 321 through the control interface of PLC control panel 21 and set the speed. Input the air intake flow rate through the control interface of PLC control panel 21. Adjust the opening of the ultra-high vacuum gate valve 34 and the air intake flow rate to stabilize the vacuum chamber 31 to the required vacuum level for etching. Set the working time of ion source 35 and start ion source 35 to ignite and etch the sample. After the ion source 35 has completed etching, control the molecular pump 37 and mechanical pump to stop through PLC control panel 21. Connect the single-cylinder double-acting cylinder 36 to the valve island, unscrew the clamping knob 4, raise the flip-top assembly 33, remove the sample, and the etching process is complete.

[0061] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0062] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A small integrated ion beam etching machine, the etching machine comprising: Workbench (1), L-shaped integrated cabinet (2), process etching chamber (3), air extraction system and air path system; The features are as follows: the process etching chamber (3) is fixedly installed on the upper surface of the workbench (1), and the bottom of the workbench (1) is fixedly installed on the top of the L-shaped integrated cabinet (2); the air passage system is installed inside the L-shaped integrated cabinet (2); and the air extraction system is installed on the process etching chamber (3). The etching chamber (3) includes: a vacuum chamber (31), a sample stage assembly (32), and a flip-top assembly (33); The flip-top assembly (33) is installed at the upper end of the vacuum chamber (31), and the flip-top assembly (33) and the vacuum chamber (31) are sealed together by double rubber rings. The sample stage assembly (32) is fixedly installed at the center of the flip-top assembly (33).

2. The miniature integrated ion beam etching machine according to claim 1, characterized in that: The process etching chamber (3) also includes: an ultra-high vacuum gate valve (34) and an ion source (35); The ultra-high vacuum slide gate valve (34) is fixedly connected to the side of the vacuum chamber (31); The sample stage assembly (32) includes: a rotary motor (321) and a sample stage (322). The rotary motor (321) is fixedly mounted on the upper surface of the flip-top assembly (33), and the sample stage (322) located in the vacuum chamber (31) is fixedly mounted on the end of the output shaft of the rotary motor (321) that passes through the flip-top assembly (33); The ion source (35) is located inside the vacuum chamber (31), and the beam of the ion source (35) is directed toward the sample stage (322).

3. The small integrated ion beam etching machine according to claim 1, characterized in that: A PLC control panel (21) is fixedly installed on the front of the top of the L-shaped integrated cabinet (2), and an ion source power supply (22) is fixedly installed inside the L-shaped integrated cabinet (2) and below the PLC control panel (21).

4. The miniature integrated ion beam etching machine according to claim 1, characterized in that: Two single-cylinder double-acting cylinders (36) are fixedly installed on both sides of the flip-top assembly (33). The other ends of the two single-cylinder double-acting cylinders (36) are fixedly installed on the workbench (1) through the connecting base. The air passage connectors of the two single-cylinder double-acting cylinders (36) are connected to the intake throttle valve and the valve island through the T-type three-way valve.

5. A small integrated ion beam etching machine according to claim 2, characterized in that: A molecular pump (37) is fixedly installed on the other side of the ultra-high vacuum gate valve (34), and the molecular pump (37) is connected to the pumping system.

6. A small integrated ion beam etching machine according to claim 1, characterized in that: The front and back of the vacuum chamber (31) are respectively fixedly installed with an observation window (38) and a vacuum gauge (39).

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