Flow diffusing device and etching equipment

Abstract

The utility model relates to the technical field of semiconductor manufacturing, and provides a flow diffusing device and etching equipment, and the flow diffusing device comprises a first flow dividing member and a second flow dividing member. The first flow dividing piece and the second flow dividing piece are arranged in the first direction. A plurality of first flow dividing holes are formed in the first flow dividing piece towards the second flow dividing piece, and a plurality of second flow dividing holes are formed in the second flow dividing piece towards the first flow dividing piece. The diffusion device can realize multiple times of uniform diffusion of the etching gas so as to ensure that the etching gas introduced into the etching cavity is uniformly distributed and improve the etching uniformity of the substrate.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a current dissipation device and etching equipment. Background Technology

[0002] There are two basic etching processes in semiconductor manufacturing: dry etching and wet etching.

[0003] Dry etching exposes the substrate surface to plasma generated in a dry gaseous state. The plasma passes through windows in the photoresist and reacts physically or chemically with the substrate (or both simultaneously), thereby removing the exposed surface material. Wet etching, on the other hand, uses liquid chemical reagents (such as acids or alkalis) to chemically remove material from the substrate surface. Wet etching is generally only used for larger dimensions (greater than 3 micrometers), and it is still used to etch certain layers on the substrate or to remove residues left after dry etching.

[0004] Dry etching is the primary method for etching devices at submicron dimensions. Dry etching can also be classified according to the type of material being etched. Based on material, etching is mainly divided into three types: metal etching, dielectric etching, and silicon etching. Dielectric etching is used for etching dielectric materials, such as silicon dioxide. The fabrication of contact holes and via structures requires etching a dielectric medium to create windows in the interlayer dielectric (ILD). Silicon etching (including polysilicon) is used in applications requiring silicon removal, such as etching polysilicon transistor gates and silicon trench capacitors. Metal etching primarily removes aluminum alloy composite layers from metal layers to create interconnects.

[0005] Currently, dry etching is also used to remove residues. For example, standard resist stripping processes have evolved to use etching to remove residues such as sidewall polymers and via capping.

[0006] In all the aforementioned dry etching methods, etching gas needs to be introduced into the etching chamber, where it reacts with the substrate surface. The uniformity of the etching gas distribution directly affects the etching uniformity. Existing dry etching equipment does not homogenize or disperse the introduced etching gas, leading to significant uncertainty in the etching gas flow distribution within the etching chamber. This results in uneven plasma distribution on the substrate surface, leading to low product yield, longer production cycles, and consequently higher production costs.

[0007] Therefore, this utility model provides a flow diffuser and etching equipment. The flow diffuser ensures that the etching gas is evenly distributed in the etching cavity by multiple homogenization flow diffusions, thereby improving the etching uniformity of the substrate. Utility Model Content

[0008] The purpose of this invention is to provide a diffusion device and an etching apparatus. The diffusion device can achieve multiple homogenization diffusion of etching gas to ensure uniform distribution of etching gas in the etching cavity and improve the etching uniformity of the substrate.

[0009] This utility model provides a flow diversion device, including a first flow diverter and a second flow diverter;

[0010] The first diverter and the second diverter are arranged along a first direction;

[0011] The first diverter has a plurality of first diverting holes, and the second diverter has a plurality of second diverting holes. The opening direction of the first diverting holes faces the second diverter, and the opening direction of the second diverting holes faces the first diverter.

[0012] Optionally, in a plurality of the second diversion holes, the diameter of a portion of the second diversion holes is larger than the diameter of the other portion of the second diversion holes.

[0013] Optionally, the second diverter includes an etched diverter portion and a protective diverter portion, the protective diverter portion surrounding the etched diverter portion;

[0014] The second diversion hole includes an etched diversion hole and a protective diversion hole. The etched diversion hole is formed in the etched diversion section, and the protective diversion hole is formed in the protective diversion section. The diameter of the etched diversion hole is larger than the diameter of the protective diversion hole.

[0015] Optionally, the first diversion hole is directly opposite the protective diversion section along the first direction.

[0016] Optionally, the flow diffuser further includes a side enclosure connected between the first flow divider and the second flow divider. The side enclosure, the first flow divider, and the second flow divider together form a flow divider cavity, and the first flow divider hole and the second flow divider hole communicate with the flow divider cavity.

[0017] Optionally, the protection diversion section includes a first protection diversion section and a second protection diversion section, the first protection diversion section surrounding the etched diversion section, the second protection diversion section surrounding the first protection diversion section, and the protection diversion hole being formed in the first protection diversion section and the second protection diversion section.

[0018] Optionally, the protective diversion orifice includes a first protective diversion orifice and a second protective diversion orifice;

[0019] The first protective diversion hole is formed in the first protective diversion section, and the second protective diversion hole is formed in the second protective diversion section. The diameter of the first protective diversion hole is larger than the diameter of the second protective diversion hole.

[0020] Optionally, the first diversion hole is directly opposite the first protection diversion section along the first direction.

[0021] Optionally, the etched flow divider is circular in projection along the first direction, and the diameter of the etched flow divider is larger than the diameter of the substrate to be etched;

[0022] And / or, along the projection of the first direction, the protective diversion section is annular;

[0023] And / or, the first diverter and the second diverter are disc-shaped, and the axis of the first diverter and the axis of the second diverter are collinear.

[0024] This invention also provides an etching apparatus, including the aforementioned diffuser device.

[0025] With this configuration, the aforementioned diffuser is installed in the etching chamber of the etching equipment and connected to the air inlet. The etching gas passing through the air inlet passes through the first and second diverters in sequence. The etching gas is diffused twice to homogenize it, so that the gas is evenly distributed above the substrate in the etching chamber. This makes the plasma on the substrate surface uniform, which helps to improve the etching uniformity, improve the etching effect, and thus improve the product yield, shorten the production cycle, and reduce the production cost.

[0026] The aforementioned diffuser, with its first and second diversion holes, not only homogenizes the airflow but also adjusts the airflow distribution. For example, by adjusting the number and distribution of the first and second diversion holes, the airflow in the central region and at the edge can be adjusted, thereby adjusting the airflow distribution within the etching cavity to meet the airflow requirements at the substrate and around the substrate during the etching process. Attached Figure Description

[0027] Figure 1 This is a three-dimensional structural schematic diagram of a diffuser device according to an embodiment of the present invention;

[0028] Figure 2 This is a side view of a diffuser device according to an embodiment of the present invention.

[0029] Figure 3 This is a top view of a diffuser device according to an embodiment of the present invention;

[0030] Figure 4 This is a bottom view of the diffuser device according to an embodiment of the present invention;

[0031] Figure 5 This is a schematic diagram of the partition structure of the second diverter according to an embodiment of the present invention;

[0032] Figure 6 This is a schematic diagram of the etching apparatus according to an embodiment of the present invention.

[0033] In the attached diagram:

[0034] 100 - Diffuser device;

[0035] 10 - First diversion component;

[0036] 20 - Second flow divider; 21 - Etched flow divider; 22 - Protective flow divider; 221 - First protective flow divider; 222 - Second protective flow divider;

[0037] 30 - First diversion orifice;

[0038] 40 - Second shunt hole; 41 - Etched shunt hole; 42 - Protective shunt hole; 421 - First protective shunt hole; 422 - Second protective shunt hole;

[0039] 50-Side panel;

[0040] 200 - Outer casing;

[0041] 300 - Intake pipe;

[0042] 400 - Exhaust pipe;

[0043] 500-Control System;

[0044] a - First direction. Detailed Implementation

[0045] The diffusion device and etching equipment proposed in this utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this utility model.

[0046] As used in this invention, the singular forms “a,” “an,” and “the” include plural objects; the term “or” is generally used to mean “and / or”; the term “a number” is generally used to mean “at least one”; and the terms “at least two” or “more than” are generally used to mean “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature. Furthermore, the terms "installed," "connected," and "attached," as used in this utility model, and the term "set" on one element from another, should be interpreted broadly. They generally only indicate a connection, coupling, cooperation, or transmission relationship between the two elements, which can be direct or indirect through an intermediate element. They should not be construed as indicating or implying a spatial positional relationship between the two elements, meaning one element can be located inside, outside, above, below, or to one side of the other element, unless otherwise explicitly stated. Those skilled in the art can understand the specific meaning of these terms in this utility model according to the specific circumstances. Additionally, directional terms such as above, below, up, down, upward, downward, left, and right are used relative to exemplary embodiments as shown in the figures, with upward or up direction pointing towards the top of the corresponding figure, and downward or down direction pointing towards the bottom of the corresponding figure.

[0047] This invention provides a diffuser device, which is an independent component, separate from the positive electrode of the etching equipment. For example, the diffuser device can be located below the positive electrode so that the gas entering the diffuser device is located in the electric field between the positive and negative electrodes.

[0048] The flow diverting device includes a first flow divider 10 and a second flow divider 20;

[0049] The first diverter 10 and the second diverter 20 are arranged along the first direction a;

[0050] The first diverter 10 has a plurality of first diverting holes 30 facing the second diverter 20, and the second diverter 20 has a plurality of second diverting holes 40 facing the first diverter 10.

[0051] Combination Figure 1 and Figure 2 As shown, in this embodiment, both the first diverter 10 and the second diverter 20 are disc-shaped. The axis of the first diverter 10 and the axis of the second diverter 20 are collinear, wherein the first direction a is parallel to the axis of the first diverter 10 and the second diverter 20.

[0052] The shapes of the first shunt 10 and the second shunt 20 are adapted to the existing circular substrate (wafer) so that the etching gas passing through the first shunt 10 and the second shunt 20 is evenly distributed along the circumferential direction of the circular wafer to achieve a better etching effect.

[0053] Please continue to combine Figures 1 to 4 As shown, in this embodiment, the first diverter 10 is provided with a plurality of first diverter holes 30, and each first diverter hole 30 is evenly distributed around the central axis of the first diverter 10. The second diverter 20 is densely provided with a plurality of second diverter holes 40, and the second diverter holes 40 are distributed in multiple layers along the radial direction of the second diverter 20, each layer including a plurality of second diverter holes 40 evenly distributed around the central axis of the second diverter 20.

[0054] The aforementioned diffusion device is installed in the etching chamber of the etching equipment and is connected to the air inlet. The etching gas passing through the air inlet passes sequentially through the first diverter 10 and the second diverter 20. The introduced etching gas is homogenized and diffused twice, so that the gas is evenly distributed above the substrate in the etching chamber, thereby making the plasma on the substrate surface uniform. This helps to improve the etching uniformity and the etching effect (e.g., improve the effect of resist removal etching, metal etching, dielectric etching, or silicon etching), thereby improving the product yield, shortening the production cycle, and reducing the production cost.

[0055] The aforementioned diffuser, with its first diversion hole 30 and second diversion hole 40, not only homogenizes the airflow but also adjusts the airflow distribution. For example, by adjusting the number and distribution pattern (e.g., the density of the holes) of the first diversion hole 30 and the second diversion hole 40, the airflow in the central region and the airflow at the edge can be adjusted, thereby adjusting the airflow distribution within the etching cavity to meet the airflow requirements at the substrate and around the substrate during the etching process.

[0056] Furthermore, in this embodiment, among the plurality of second diversion holes, the diameter of a portion of the second diversion holes is larger than the diameter of the other portion. Since the damping of second diversion holes with different diameters is different, the flow rate of second diversion holes with different diameters is also different. Therefore, by setting the number, distribution, and diameter of the second diversion holes, the local gas flow rate can be adjusted, thereby flexibly meeting etching requirements. Thus, the above-mentioned flow distribution device combines homogenization and airflow distribution adjustment functions, resulting in higher certainty in airflow distribution.

[0057] In this embodiment, the first diverter 10 and the second diverter 20 are configured as disks. In other alternative embodiments, the first diverter 10 and the second diverter 20 can be configured as square, hexagonal, or other shapes, and the specific shapes can be adaptively adjusted based on factors such as the assembly method with other equipment and actual flow dissipation requirements.

[0058] In this embodiment, two layers of flow dividers are included: a first flow divider 10 and a second flow divider 20. In other alternative embodiments, the flow distribution device may also include more layers of flow dividers, such as three layers, to further homogenize the etching gas. The number of flow dividers can be adjusted based on the actual gas homogenization and flow distribution requirements.

[0059] In this embodiment, both the first diversion hole 30 and the second diversion hole 40 are uniformly distributed along the circumferential direction. In other alternative embodiments, the first diversion hole 30 and the second diversion hole 40 can be arranged in a square grid pattern, and the specific arrangement of the first diversion hole 30 and the second diversion hole 40 can be adaptively adjusted based on factors such as etching requirements and homogenization and diffusion requirements.

[0060] In this embodiment, the first diversion hole 30 is arranged in a radial layer. The first diversion hole 30 is used to control the radial passage position of the etching gas along the first diversion element 10, and also to make the etching gas uniformly distributed circumferentially. In other alternative embodiments, the first diversion hole 30 may also be arranged in multiple layers radially, and the specific arrangement of the first diversion hole 30 can be adjusted according to actual usage requirements.

[0061] Furthermore, the flow diversion device also includes a side enclosure 50, which is connected between the first flow diverter 10 and the second flow diverter 20. The side enclosure 50, the first flow diverter 10 and the second flow diverter 20 together form a flow diversion cavity, and the first flow diversion hole 30 and the second flow diversion hole 40 are in communication with the flow diversion cavity.

[0062] Please continue to refer to this. Figure 1 As shown, the side panel 50 is adapted to the shape of the first diverter 10 and the second diverter 20 and is configured as an annular structure. The outer diameters of the side panel 50, the first diverter 10 and the second diverter 20 are the same, and the central axis of the side panel 50 is collinear with the central axes of the first diverter 10 and the second diverter 20.

[0063] The side panel 50 makes the diffuser device have a cylindrical structure with an inner cavity. After the etching gas passes through the first diverter 10, it first enters the diverter cavity, where the flow rate is slowed down and the gas stays for a certain period of time to homogenize the diffuser. Then it flows out through the second diverter hole 40 to further improve the homogenization and diffuser effect.

[0064] In this embodiment, preferably at least one of the first diverter 10 and the second diverter 20 is detachably connected to the side enclosure 50 to facilitate cleaning of the inside of the diffuser.

[0065] In this embodiment, the first diversion hole 30 and the second diversion hole 40 are opened along the first direction a, and the opening directions of the first diversion hole 30 and the second diversion hole 40 are parallel, so that the flow direction of the etching gas passing through the first diversion hole 30 and the second diversion hole 40 is consistent. In other alternative embodiments, the opening directions of the first diversion hole 30 and the second diversion hole 40 may have a certain angle, or the first diversion hole 30 and the second diversion hole 40 may be set at a certain angle with the first direction a.

[0066] Please refer to Figure 3 , Figure 4 and Figure 5 As shown, the second diversion member 20 includes an etched diversion section 21 and a protective diversion section 22, the protective diversion section 22 surrounding the etched diversion section 21, and the second diversion hole 40 is formed in the etched diversion section 21 and the protective diversion section 22;

[0067] Please refer to Figure 5 As shown, the etching diversion section 21 is located within a circular region with a radius of R1 at the center of the second diversion component 20, and the etching diversion section 21 has an overall disk-shaped structure. Therefore, projected along the first direction a, the etching diversion section 21 is circular, and its diameter is larger than the diameter of the substrate to be etched. During the etching process, the substrate to be etched is located below the etching diversion section 21, meaning that the gas passing through the etching diversion section 21 covers the entire substrate.

[0068] The protective diversion section 22 is annular, therefore, along the projection of the first direction a, the protective diversion section 22 is annular. The area of ​​the second diversion member 20 other than the etched diversion section 21 is the protective diversion section 22. The etched diversion section 21 and the protective diversion section 22 are integrally formed. The protective diversion section 22 corresponds to... Figure 5The region has a radius of R1 to R3. The function of the protective diversion section 22 is to protect the gas passing through the etching diversion section 21. When the etching gas passing through the etching diversion section 21 enters the etching chamber, it forms a cylindrical airflow. This cylindrical airflow mainly contacts the surface of the substrate for etching, and it covers the entire substrate. When the etching gas passing through the protective diversion section 22 enters the etching chamber, it forms a cylindrical air curtain. This air curtain surrounds the cylindrical airflow to protect the cylindrical airflow in the central area from being diluted by the surrounding gas, thereby ensuring the stability of the concentration and uniformity of the cylindrical airflow. In addition, during the actual etching process, etching gas is introduced into the etching chamber on the one hand, and waste gas is extracted from the etching chamber on the other hand. Therefore, the airflow in the etching chamber is always in a state of circulation. The formation of the cylindrical air curtain can also reduce the influence of the airflow on the cylindrical airflow in the central area, thereby improving the gas homogenization and dispersion effect.

[0069] Please refer to Figure 4 As shown, the second diversion hole 40 includes an etched diversion hole 41 and a protective diversion hole 42. The etched diversion hole 41 is formed in the etched diversion section 21, and the protective diversion hole 42 is formed in the protective diversion section 22. The diameter of the etched diversion hole 41 is larger than the diameter of the protective diversion hole 42.

[0070] The etching diversion section 21 has multiple etching diversion holes 41 densely arranged within it, and the protection diversion section 22 has multiple protection diversion holes 42 densely arranged within it. Each protection diversion hole 42 surrounds the etching diversion section 21. Because the diameter of the protection diversion holes 42 is small, the damping of a single protection diversion hole 42 is large, resulting in greater airflow resistance for the gas passing through them. Therefore, when the airflow passes through the second diversion component 20, the gas resistance through the etching diversion section 21 is less than the gas resistance through the protection diversion section 22. This ensures that most of the etching gas passes through the etching diversion section 21, thereby guaranteeing that most of the etching gas is used for etching the substrate and improving the utilization rate of the etching gas.

[0071] In this embodiment, the etched flow divider 21 is disc-shaped, and the protective flow divider 22 is annular. In other alternative embodiments, the etched flow divider 21 can be square or other shapes, and the protective flow divider 22 can be square, square inside and round outside, or round inside and square outside, etc.

[0072] Furthermore, in combination Figure 4 and Figure 5 As shown, the protection diversion section 22 further includes a first protection diversion section 221 and a second protection diversion section 222. The first protection diversion section 221 surrounds the etched diversion section 21, and the second protection diversion section 222 surrounds the first protection diversion section 221. The protection diversion hole 42 is formed in the first protection diversion section 221 and the second protection diversion section 222.

[0073] The first protection diversion section 221 is annular in shape, and the first protection diversion section 221 is located at... Figure 5 The region with a radius of R1 to R2; the second protection diversion section 222 is also annular, and the second protection diversion section 222 is located in Figure 5 In the region with a radius of R2 to R3, the first protection diversion part 221 and the second protection diversion part 222 are integrally formed.

[0074] The aforementioned protective diversion section 22 is divided into two regions: the first protective diversion section 221 and the second protective diversion section 222, which can form two layers of protective air curtains, thereby forming a dual and effective protection for the cylindrical airflow in the central region.

[0075] Please continue to refer to this. Figure 4 As shown, the protective diversion hole 42 also includes a first protective diversion hole 421 and a second protective diversion hole 422;

[0076] The first protective diversion hole 421 is formed in the first protective diversion section 221, and the second protective diversion hole 422 is formed in the second protective diversion section 222. The diameter of the first protective diversion hole 421 is larger than the diameter of the second protective diversion hole 422.

[0077] Because the diameter of the second protective diversion hole 422 is small, the damping of a single second protective diversion hole 422 is large. Therefore, the airflow resistance through the second protective diversion hole 422 is large. Consequently, when the airflow passes through the second diversion member 20, the gas resistance through the first protective diversion section 221 is less than the gas resistance through the second protective diversion section 222. Considering the etching diversion section 21, the gas resistance through the etching diversion section 21 is the smallest, the gas resistance through the first protective diversion section 221 is the second largest, and the gas resistance through the second protective diversion section 222 is the largest. Figure 4 As shown, the gas resistance of the single hole of the second diverter 20 gradually decreases as it moves radially inward, causing the overall airflow to tend to converge towards the center of the second diverter 20. Consequently, most of the etching gas passes through the etching diverter 21 and the first protection diverter 221, achieving effective etching of the substrate and effective protection of the cylindrical airflow in the central region.

[0078] Furthermore, the dimension of R2-R1 is larger than that of R3-R2, meaning the radial dimension of the first protective diversion section 221 is larger than the radial dimension of the second protective diversion section 222. The larger radial dimension of the first protective diversion section 221 results in a thicker protective air curtain surrounding the cylindrical airflow in the central region, achieving a better protective effect. The annular air curtain formed by the second protective diversion section 222 is thinner, protecting not only the cylindrical airflow in the central region but also the thicker air curtain formed by the first protective diversion section 221, ensuring the stability of this air curtain and thus guaranteeing the stability and uniformity of the cylindrical airflow in the central region.

[0079] Please continue to refer to this. Figure 3 and Figure 4 As shown, the first diversion hole 30 is directly opposite the protection diversion section 22 along the first direction a.

[0080] Furthermore, when the protection diversion section 22 is divided into the first protection diversion section 221 and the second protection diversion section 222, the first diversion hole 30 is directly opposite the first protection diversion section 221 along the first direction a.

[0081] Since the gas resistance of a single hole in the etching diversion section 21 is minimal, if the first diversion hole 30 is directly opposite or close to the area of ​​the etching diversion section 21, the airflow through the first protective diversion section 221 and the second protective diversion section 222 will be less. This is especially true when the first diversion hole 30 is radially far from the second protective diversion section 222, resulting in less airflow through the second protective diversion section 222. Therefore, in this embodiment, the first diversion hole 30 is aligned with the protective diversion section 22, and further aligned with the first protective diversion section 221. The airflow through the first diversion hole 30 is directly aligned with the first protective diversion section 221, and this airflow tends to converge towards the center. This ensures that the etching diversion section 21 has sufficient gas flow, while also ensuring that the airflow through the first protective diversion section 221 and the second protective diversion section 222 is sufficient, thus forming a better protective effect.

[0082] In this embodiment, the protective diversion section 22 is divided into two regions: a first protective diversion section 221 and a second protective diversion section 222, thereby forming two layers of protective air curtain. In other alternative embodiments, the protective diversion section 22 can be divided into more regions to form more layers of protective air curtain.

[0083] In this embodiment, the diameters of the etched diversion orifice 41, the first protective diversion orifice 421, and the second protective diversion orifice 422 decrease sequentially. The difference in diameter between the orifices and the number of orifices can be adaptively adjusted based on the requirements for gas homogenization and dispersion, as well as the flow rate requirements of each region.

[0084] This embodiment also provides an etching apparatus, including the above-described diffuser device 100.

[0085] Combination Figure 6 As shown, the etching equipment also includes a housing 200, an inlet pipe 300, an outlet pipe 400, and various control systems 500. The inlet pipe 300 is connected to the top of the housing 200, which contains an etching chamber. A diffuser 100 is installed on the top of the etching chamber, directly opposite the outlet of the inlet pipe 300, so that the gas entering through the inlet pipe 300 needs to be homogenized and diffused by the diffuser 100 before entering the etching chamber. The inlet pipe 300 is connected to the gas supply system. The outlet pipe 400 is connected to the housing 200 near the bottom and is connected to an external pump for extracting waste gas from the etching chamber. The control systems 500 include a temperature control system, a pressure control system, a flow control system, and a radio frequency control system. In addition, a positive electrode and a negative electrode are provided in the etching chamber. The positive electrode is located at the top of the etching chamber and above the diffuser 100, while the negative electrode is located at the bottom of the etching chamber. The positive and negative electrodes work together to form an electric field to control the direction of plasma movement.

[0086] The etching equipment described above can maintain the same structure as existing etching equipment, except for the setting of the diffuser device 100, which will not be described in detail here.

[0087] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0088] The above description is only a description of the preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A diffuser device, characterized in that, Including the first diverter and the second diverter; The first diverter and the second diverter are arranged along a first direction; The first diverter has a plurality of first diverting holes, and the second diverter has a plurality of second diverting holes. The opening direction of the first diverting holes faces the second diverter, and the opening direction of the second diverting holes faces the first diverter.

2. The diffuser as described in claim 1, characterized in that, In the plurality of second diversion holes, the diameter of a portion of the second diversion holes is larger than the diameter of the other portion of the second diversion holes.

3. The diffuser as described in claim 1, characterized in that, The second diverter includes an etched diverter section and a protective diverter section, the protective diverter section surrounding the etched diverter section; The second diversion hole includes an etched diversion hole and a protective diversion hole. The etched diversion hole is formed in the etched diversion section, and the protective diversion hole is formed in the protective diversion section. The diameter of the etched diversion hole is larger than the diameter of the protective diversion hole.

4. The diffuser as described in claim 3, characterized in that, The first diversion hole is directly opposite the protective diversion section along the first direction.

5. The diffuser as described in claim 1, characterized in that, The diffuser also includes a side enclosure, which is connected between the first diverter and the second diverter. The side enclosure, the first diverter, and the second diverter together form a diverting cavity, and the first diverting hole and the second diverting hole communicate with the diverting cavity.

6. The diffuser as described in claim 3, characterized in that, The protection diversion section includes a first protection diversion section and a second protection diversion section. The first protection diversion section surrounds the etched diversion section, and the second protection diversion section surrounds the first protection diversion section. The protection diversion hole is formed in the first protection diversion section and the second protection diversion section.

7. The diffuser as described in claim 6, characterized in that, The protective diversion orifice includes a first protective diversion orifice and a second protective diversion orifice; The first protective diversion hole is formed in the first protective diversion section, and the second protective diversion hole is formed in the second protective diversion section. The diameter of the first protective diversion hole is larger than the diameter of the second protective diversion hole.

8. The diffuser as described in claim 6 or 7, characterized in that, The first diversion hole is directly opposite the first protection diversion section along the first direction.

9. The diffuser as described in claim 3, characterized in that, Projected along the first direction, the etched flow divider is circular, and the diameter of the etched flow divider is larger than the diameter of the substrate to be etched; And / or, along the projection of the first direction, the protective diversion section is annular; And / or, the first diverter and the second diverter are disc-shaped, and the axis of the first diverter and the axis of the second diverter are collinear.

10. An etching apparatus, characterized in that, Includes the diffuser as described in any one of claims 1 to 9.

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