Air inlet structure and deposition equipment

Abstract

The utility model relates to an air inlet structure and deposition equipment. The air inlet structure comprises a furnace tube which extends in the first direction, a containing channel is formed in the furnace tube, and a first channel opening and a second channel opening are formed in the two ends of the furnace tube in the first direction respectively; the two air inlet pipe groups are arranged in the accommodating channel; the same air inlet pipe group comprises a plurality of air inlet pipes; the gas inlet pipe of one of the two gas inlet pipe groups is a first gas inlet pipe which extends from the first channel opening to the middle of the furnace tube along the first direction, and the gas inlet pipe of the other gas inlet pipe group is a second gas inlet pipe which extends from the second channel opening to the middle of the furnace tube along the first direction; the first air inlet pipe and the second air inlet pipe are provided with a plurality of air holes distributed at intervals in the first direction. The first air inlet pipe and the second air inlet pipe are correspondingly arranged, and the first air inlet pipe and the corresponding second air inlet pipe are used for being connected with the same air source. Therefore, according to the gas inlet structure and the deposition equipment provided by the invention, the flow difference of the process gas at the first channel opening and the second channel opening of the furnace tube can be reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photovoltaic technology, in particular to an air inlet structure and a deposition device. BACKGROUND

[0002] Back Contact (BC) cells are an advanced design for improving the efficiency of solar cells, which places all metal electrodes of the cell on the back of the cell sheet, so that the front of the cell is not blocked by any metal electrode, thereby maximizing the area of the cell to absorb sunlight, reducing optical loss, and improving photoelectric conversion efficiency.

[0003] In the related art, a silicon wafer can be placed in a furnace tube of a deposition device for deposition.

[0004] However, the flow rate of deposition process gas at the furnace mouth and the furnace tail of the above furnace tube is quite different. UTILITARIAN CONTENT

[0005] Therefore, it is necessary to provide an air inlet structure and a deposition device, which can reduce the flow rate difference of process gas at the first channel mouth and the second channel mouth of the furnace tube.

[0006] In a first aspect, an air inlet structure is provided, comprising:

[0007] A furnace tube extends in a first direction, and a containing channel is arranged in the furnace tube. The furnace tube has a first channel mouth and a second channel mouth at two ends thereof in the first direction, and the first channel mouth and the second channel mouth are in communication with the containing channel.

[0008] Two air inlet pipe groups are arranged in the containing channel. Each air inlet pipe group comprises a plurality of air inlet pipes. The air inlet pipes of one of the two air inlet pipe groups are first air inlet pipes, and the first air inlet pipes extend from the first channel mouth to the middle part of the furnace tube in the first direction. The air inlet pipes of the other of the two air inlet pipe groups are second air inlet pipes, and the second air inlet pipes extend from the second channel mouth to the middle part of the furnace tube. The first air inlet pipes and the second air inlet pipes are provided with a plurality of air holes arranged at intervals in the first direction.

[0009] Each first air inlet pipe corresponds to a second air inlet pipe, and each first air inlet pipe and the corresponding second air inlet pipe are used to connect to the same gas source.

[0010] The gas inlet structure provided by the embodiments of the present application is characterized in that the first gas inlet pipe extends from the first channel opening to the middle part of the pipe along the first direction, and the second gas inlet pipe extends from the second channel opening to the middle part of the pipe, the first gas inlet pipe is arranged correspondingly to the second gas inlet pipe, the first gas inlet pipe and the corresponding second gas inlet pipe are used to connect to the same gas source, so that the uniformity of the process gas required for deposition is good at each part of the gas inlet structure during the deposition process, thereby reducing the difference in the thickness of the film deposited on the silicon wafer at the first channel opening and the second channel opening, reducing the difference in the refractive index of the film on the silicon wafer at each part of the pipe, and reducing the adverse effects of the gas flow difference on the efficiency of the solar cell.

[0011] In one of the embodiments, the gas inlet structure comprises a plurality of fixing members arranged in the accommodating channel, and one gas inlet pipe is arranged correspondingly to the plurality of fixing members.

[0012] In the gas inlet pipe and the corresponding plurality of fixing members, the plurality of fixing members are arranged at intervals along the first direction, and the gas inlet pipe is connected to the pipe through the corresponding fixing members.

[0013] In one of the embodiments, the accommodating channel comprises a plurality of hedging areas arranged at intervals along the first direction.

[0014] In the same gas inlet pipe group, the gas holes on each gas inlet pipe are arranged correspondingly to the hedging areas, and the gas holes on each gas inlet pipe are directed towards the corresponding hedging areas.

[0015] In one of the embodiments, the distance between the hedging area and the gas inlet pipe assembly along the direction perpendicular to the first direction is a first distance.

[0016] The first distance of the plurality of hedging areas gradually decreases along the direction from the edge to the center of the pipe along the first direction.

[0017] In one of the embodiments, in the same gas inlet pipe group, the plurality of gas inlet pipes are arranged at intervals along the circumference of the pipe.

[0018] The distance between the adjacent two gas inlet pipes along the circumference of the pipe is a second distance, and the second distance between the adjacent two gas inlet pipes gradually decreases along the direction from the edge to the center of the pipe along the first direction.

[0019] In one of the embodiments, on the same gas inlet pipe, the distance between the adjacent two gas holes gradually decreases along the direction from the edge to the center of the pipe along the first direction.

[0020] In one of the embodiments, on the same gas inlet pipe, the opening size of the plurality of gas holes gradually increases along the direction from the edge to the center of the pipe along the first direction.

[0021] In one of the embodiments, the first gas inlet pipe and the corresponding second gas inlet pipe have a spacing along the first direction.

[0022] In one of the embodiments, the first gas inlet pipe and the corresponding second gas inlet pipe are arranged opposite to each other along the first direction;

[0023] Alternatively, the first gas inlet pipe and the corresponding second gas inlet pipe are arranged staggered along the first direction, the first gas inlet pipe is provided with a first auxiliary gas inlet pipe on the side facing the second gas inlet pipe, the second gas inlet pipe is provided with a second auxiliary gas inlet pipe on the side facing the first gas inlet pipe, and the first auxiliary gas inlet pipe and the second auxiliary gas inlet pipe are arranged opposite to each other along the circumference of the furnace tube.

[0024] In a second aspect, the embodiments of the present application provide a deposition device, comprising the gas inlet structure in the first aspect.

[0025] The deposition device provided by the embodiments of the present application comprises the gas inlet structure, the first gas inlet pipe extends from the first channel opening to the middle part of the furnace tube along the first direction, the second gas inlet pipe extends from the second channel opening to the middle part of the furnace tube, the first gas inlet pipe and the corresponding second gas inlet pipe are arranged correspondingly, and the first gas inlet pipe and the corresponding second gas inlet pipe are used to access the same gas source, so that the uniformity of the gas inlet at each part of the gas inlet structure is good during the deposition process, so that the thickness difference of the deposited film of the silicon wafer at the first channel opening and the second channel opening is small, the refractive index difference of the film on the silicon wafer at each part of the furnace tube can be reduced, and the adverse effects of the gas flow difference on the efficiency of the solar cell can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 The structure diagram of the gas inlet structure provided by the embodiments of the present application is shown.

[0027] Figure 2 Another structure diagram of the gas inlet structure provided by the embodiments of the present application is shown.

[0028] Figure 3 Another structure diagram of the gas inlet structure provided by the embodiments of the present application is shown.

[0029] Figure 4 The side view of the gas inlet structure provided by the embodiments of the present application is shown.

[0030] Figure 5 Another side view of the gas inlet structure provided by the embodiments of the present application is shown.

[0031] Figure 6 The structure diagram of the furnace tube and the fixing member provided by the embodiments of the present application is shown.

[0032] Figure 7 The structure diagram of the gas inlet pipe group provided by the embodiments of the present application is shown.

[0033] Figure 8 The structure diagram of the gas inlet pipe provided by the embodiments of the present application is shown.

[0034] Figure 9 Another structural schematic view of the air inlet pipe provided by the embodiment of the present application.

[0035] Figure 10 Another structural schematic view of the air inlet pipe provided by the embodiment of the present application.

[0036] Figure 11 Another structural schematic view of the air inlet pipe provided by the embodiment of the present application.

[0037] Explanation of reference signs:

[0038] 100, air inlet structure; 110, furnace tube; 111, first passage opening; 112, second passage opening; 113, accommodating passage; 114, hedging area; 120a, air inlet pipe set; 120, air inlet pipe; 121, first air inlet pipe; 122, second air inlet pipe; 123, air hole; 130, fixing member. DETAILED DESCRIPTION

[0039] In order to make the above objectives, features and advantages of the present application more apparent, specific embodiments of the present application are described in detail below with reference to the accompanying drawings. In the following description, a large number of specific details are set forth in order to provide a sufficient understanding of the present application. However, the present application can be implemented in many different ways other than those described herein, and those skilled in the art can make similar improvements without departing from the spirit of the present application, so the present application is not limited to the specific embodiments disclosed below.

[0040] In the description of the present application, it should be understood that if these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0041] In addition, if these terms "first", "second" appear, these terms are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited by "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, if the term "multiple" appears, the meaning of "multiple" is at least two, for example, two, three, etc., unless otherwise specifically limited.

[0042] In the present application, unless specifically defined otherwise, if there is any appearance of the terms "mount", "connect", "connection", "fixed", and the like, these terms should be interpreted in a broad sense. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise specifically defined. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0043] In the present application, unless specifically defined otherwise, if there is any appearance of the terms "mount", "connect", "connection", "fixed", and the like, these terms should be interpreted in a broad sense. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise specifically defined. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0044] It should be noted that if an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there can be a middle element present. If an element is considered to be "connected" to another element, it can be directly connected to the other element or there can be a middle element present. If present, the terms "vertical", "horizontal", "up", "down", "left", "right", and similar expressions used in the present application are for illustrative purposes only and do not represent the only implementation.

[0045] In the related art, a deposition device includes a furnace tube, and a silicon wafer can be placed in the furnace tube for deposition. An air inlet pipe is arranged in the furnace tube, and the air inlet pipe is arranged close to the furnace mouth end of the furnace tube. Process gas is introduced into the furnace mouth of the furnace tube through the air inlet pipe, and the process gas is transmitted along the furnace tube from the furnace mouth to the furnace tail.

[0046] However, since the air inlet pipe is arranged close to the furnace mouth end of the furnace tube, the flow rate of the process gas at the furnace mouth is relatively large, and the flow rate of the process gas at the furnace tail is relatively small, thereby causing a large difference in the flow rate of the process gas at the furnace mouth and the furnace tail of the furnace tube, causing a large difference in the deposited film (e.g., thickness) of the silicon wafer at the furnace mouth and the silicon wafer at the furnace tail, causing a large difference in the refractive index of the deposited film of the silicon wafer at the furnace mouth and the silicon wafer at the furnace tail, thereby affecting the efficiency of the solar cell.

[0047] To solve the above problems, the embodiment of the present application provides an air inlet structure and a deposition device, which can improve the uniformity of the flow of the first passage opening of the furnace tube and the process gas at the first passage opening.

[0048] The following will be described in combination with Figures 1-11 The air inlet structure 100 and the deposition device provided by the embodiment of the present application are described.

[0049] The embodiment of the present application provides an air inlet structure 100, which comprises a furnace tube 110. For example, the process gas (for example, a special gas) can be introduced into the furnace tube 110, and the silicon wafer is deposited in the furnace tube 110.

[0050] For example, referring to Figure 1 The furnace tube 110 can extend along a first direction A. The furnace tube 110 is provided with a containing passage 113 extending along the first direction A, and the containing passage 113 penetrates through the furnace tube 110 along the first direction A. The furnace tube 110 is provided with a first passage opening 111 and a second passage opening 112 at two ends along the first direction A, and the first passage opening 111 and the second passage opening 112 are both in communication with the containing passage 113.

[0051] For example, referring to Figure 1 The air inlet structure 100 comprises two air inlet pipe groups 120a, and the two air inlet pipe groups 120a are both arranged in the containing passage 113 and are both used to provide the process gas into the containing passage 113 of the furnace tube 110.

[0052] For example, referring to Figure 2 and Figure 3 The same air inlet pipe group 120a comprises at least one air inlet pipe 120, and the embodiment of the present application takes the example that the same air inlet pipe group 120a comprises multiple air inlet pipes 120.

[0053] For example, referring to Figure 1 The air inlet pipe 120 of one of the two air inlet pipe groups 120a is a first air inlet pipe 121, and the air inlet pipe 120 of the other of the two air inlet pipe groups 120a is a second air inlet pipe 122. The first air inlet pipe 121 extends from the first passage opening 111 to the middle part of the furnace tube 110 along the first direction A, that is, one end of the first air inlet pipe 121 is arranged close to the first passage opening 111, and the other end of the first air inlet pipe 121 is arranged close to the middle part of the furnace tube 110 along the first direction A. The second air inlet pipe 122 extends from the second passage opening 112 to the middle part of the furnace tube 110 along the first direction A, that is, one end of the second air inlet pipe 122 is arranged close to the second passage opening 112, and the other end of the second air inlet pipe 122 is arranged close to the middle part of the furnace tube 110 along the first direction A. In this way, the two air inlet pipe groups 120a can jointly cover the containing passage 113 along the first direction A more completely.

[0054] For example, referring to FIG. 1 and FIG. 2, Figure 7 For example, referring to FIG. 1 and FIG. 2, Figure 6 For example, referring to FIG. 1 and FIG. 2,

[0055] For example, referring to FIG. 1 and FIG. 2, For example, referring to FIG. 1 and FIG. 2,

[0056] For example, in the same air inlet pipe group 120a, different air inlet pipes 120 can be connected to the same gas source or different gas sources.

[0057] In some embodiments, referring to Figure 4 and Figure 6 , the air inlet structure 100 comprises a plurality of fixing members 130 arranged in the accommodation channel 113, and the fixing members 130 are used to fix the air inlet pipes 120 in the accommodation channel 113.

[0058] For example, referring to Figure 4 and Figure 6 , one air inlet pipe 120 is correspondingly arranged with a plurality of fixing members 130. In the air inlet pipe 120 and the corresponding plurality of fixing members 130, the plurality of fixing members 130 are arranged in the first direction A, and the air inlet pipe 120 is connected to the furnace pipe 110 through the corresponding plurality of fixing members 130. In this way, the corresponding air inlet pipe 120 is fixed through the plurality of fixing members 130, which can improve the connection stability of the air inlet pipe 120 and the furnace pipe 110.

[0059] In some embodiments, referring to Figure 5 and Figure 6 , the accommodation channel 113 comprises a plurality of hedging areas 114 arranged in the first direction A. In the same air inlet pipe group 120a, the air holes 123 on each air inlet pipe 120 are correspondingly arranged with the hedging areas 114, and the air holes 123 on each air inlet pipe 120 are directed to the corresponding hedging areas 114, so that the process gas output from the air holes 123 on each air inlet pipe 120 is output into the hedging areas 114, so that the process gas output from the air holes 123 on each air inlet pipe 120 can form a hedging, and through the hedging, the process gas output from the air holes 123 on each air inlet pipe 120 can be mixed more uniformly, thereby improving the uniformity of the air inlet at each part of the furnace pipe 110, better reducing the flow difference of the process gas at the first channel opening 111 and the second channel opening 112, and reducing the refractive index difference of the film on the silicon wafer at each part of the furnace pipe 110, and reducing the adverse effects of the gas flow difference on the efficiency of the solar cell. Among them, Figure 5 C1, C2, and C3 in the above formula show the paths of the gas output from each air inlet pipe 120 of the air inlet pipe group 120a, and the gas output from each air inlet pipe 120 forms a hedging in the corresponding hedging area 114.

[0060] It should be noted that, taking the first air inlet pipe 121 as an example, the first air inlet pipe 121 includes a first end close to the first channel opening 111 and a second end far from the first channel opening 111. The air hole 123 at the first end is closer to the gas source than the air hole 123 at the second end, so the flow rate at the air hole 123 at the first end is higher than the flow rate at the air hole 123 at the second end. The flow rate of the process gas output from the multiple air holes 123 on the first air inlet pipe 121 will gradually decrease along the direction from the edge to the center of the furnace tube 110 in the first direction A. That is, when the air hole 123 is far from the gas source, the gas flow rate at the air hole 123 is small, which will lead to a reduction in the intensity of gas collision in the corresponding collision area 114, thereby affecting the air intake uniformity of the first air inlet pipe 121.

[0061] In some embodiments, see Figure 5 and Figure 6 The distance between the counter-current region 114 and the intake manifold 120a along the direction perpendicular to the first direction (A) Figure 5 The second direction (B) is the first distance L1. The first distance L1 of the multiple opposing regions 114 decreases sequentially from the edge of the first direction A of the furnace tube 110 to the center. This helps to reduce the distance between the air hole 123 near the middle of the furnace tube 110 and the corresponding opposing region 114. It also helps to increase the intensity of the opposing of the output gas from the air hole 123 near the middle of the furnace tube 110 in the corresponding opposing region 114. This alleviates the uneven air intake of the air pipe 120 caused by the large distance between the air hole 123 and the gas source, which leads to a decrease in the flow rate of the process gas at the air hole 123.

[0062] In other embodiments, the first distance L1 of the multiple hedging regions 114 is the same.

[0063] In some embodiments, see Figure 4 and Figure 5 In the same inlet pipe group 120a, multiple inlet pipes 120 are arranged at intervals along the circumference of the furnace tube 110. The distance between two adjacent inlet pipes 120 along the circumference of the furnace tube 110 is called the second distance. The second distance between two adjacent inlet pipes 120 gradually decreases from the edge to the center of the first direction A of the furnace tube 110. This results in a smaller second distance between two adjacent inlet pipes 120 in the middle of the furnace tube 110. This helps to reduce the distance between the vents 123 of two adjacent inlet pipes 120 in the middle of the furnace tube 110. As a result, the gas output from the vents 123 of two adjacent inlet pipes 120 in the middle of the furnace tube 110 can form a countercurrent more quickly, thereby increasing the intensity of the countercurrent in the corresponding countercurrent region 114. This alleviates the uneven air intake of the inlet pipe 120 caused by the large distance between the vent 123 and the gas source, which leads to a decrease in the process gas flow rate at the vent 123.

[0064] In some embodiments, the second distance between two adjacent gas inlet tubes 120 in the same gas inlet tube group 120a is the same along the first direction A of the furnace tube 110, so that the difficulty of arranging the two adjacent gas inlet tubes 120 can be reduced.

[0065] In some embodiments, referring to Figures 8-11 In the same gas inlet tube 120, the distance between two adjacent gas holes 123 decreases along the direction from the edge to the center of the first direction A of the furnace tube 110, so that the arrangement density of the gas holes 123 of the gas inlet tube 120 is larger in the middle part of the furnace tube 110, thereby alleviating the non-uniformity of the gas inlet of the gas inlet tube 120 caused by the decrease of the process gas flow at the gas hole 123 due to the large distance between the gas hole 123 and the gas source.

[0066] In some embodiments, referring to

[0067] In some embodiments, the opening size of the plurality of gas holes 123 in the same gas inlet tube 120 increases along the direction from the edge to the center of the first direction A of the furnace tube 110, so that the opening size of the gas holes 123 of the gas inlet tube 120 located in the middle part of the furnace tube 110 is larger, thereby facilitating the increase of the gas flow of the gas holes 123 of the gas inlet tube 120 located in the middle part of the furnace tube 110, and thereby alleviating the non-uniformity of the gas inlet of the gas inlet tube 120 caused by the decrease of the process gas flow at the gas hole 123 due to the large distance between the gas hole 123 and the gas source.

[0068] In some embodiments, referring to

[0069] In some embodiments, referring to Figure 2 The accommodation channel 113 of the furnace tube 110 can include a first region E1 and a second region E2, and the two gas inlet tube groups 120a are located in the first region E1 and the second region E2 respectively, the first gas inlet tube 121 is located in the first region E1, and the second gas inlet tube 122 is located in the second region E2.

[0070] In some embodiments, referring to

[0071] In some embodiments, referring to Figure 2The first air inlet pipe 121 and the corresponding second air inlet pipe 122 are arranged opposite to each other along the first direction A, so that the position of the first air inlet pipe 121 in the first region E1 is substantially the same as the position of the corresponding second air inlet pipe 122 in the second region E2, so that the influence of the first air inlet pipe 121 on the air inlet uniformity in the first region E1 and the influence of the second air inlet pipe 122 on the air inlet uniformity in the second region E2 are substantially the same, so that the air inlet uniformity of the first region E1 and the second region E2 can be improved.

[0072] In some other embodiments, the first air inlet pipe 121 and the corresponding second air inlet pipe 122 are staggered along the first direction A, and at this time, the side of the first air inlet pipe 121 facing the second air inlet pipe 122 is provided with a first auxiliary air inlet pipe, and the side of the second air inlet pipe 122 facing the first air inlet pipe 121 is provided with a second auxiliary air inlet pipe, the first auxiliary air inlet pipe and the second auxiliary air inlet pipe are arranged opposite to each other along the circumference of the furnace tube 110, and the first auxiliary air inlet pipe 120 and the second auxiliary air inlet pipe 120 are arranged close to the middle part of the furnace tube 110. In this way, by arranging the first auxiliary air inlet pipe 120 and the second auxiliary air inlet pipe 120, the gas flow of the middle part of the furnace tube 110 can be improved, so that the air inlet uniformity of the middle part and the edge of the furnace tube 110 can be improved.

[0073] The embodiments of the present application provide a deposition device, which comprises the air inlet structure 100 in the above embodiments. The deposition device can include, but is not limited to, a chemical vapor deposition device (for example, a plasma enhanced chemical vapor deposition (PECVD) device), a physical vapor deposition device, an atomic layer deposition device, etc.

[0074] The technical features of the above embodiments can be combined in any manner. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described, but as long as the combinations of the technical features do not exist contradictory, they should be considered as the scope of the present application.

[0075] The above embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be pointed out that for ordinary skilled persons in the art, some modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. An air intake structure characterized by, The application relates to a gas inlet structure of a furnace tube. The gas inlet structure comprises a furnace tube extending along a first direction, a containing passage arranged in the furnace tube, a first passage opening and a second passage opening arranged at two ends of the furnace tube along the first direction and communicating with the containing passage respectively, two gas inlet pipe groups arranged in the containing passage, each of the gas inlet pipe groups comprising a plurality of gas inlet pipes, the gas inlet pipes of one of the two gas inlet pipe groups being first gas inlet pipes, the first gas inlet pipes extending from the first passage opening to a middle part of the furnace tube along the first direction, the gas inlet pipes of the other of the two gas inlet pipe groups being second gas inlet pipes, the second gas inlet pipes extending from the second passage opening to the middle part of the furnace tube, and each of the first gas inlet pipes and the corresponding second gas inlet pipe being used for connecting to the same gas source. The gas inlet structure comprises a plurality of fixing members arranged in the containing passage, and one gas inlet pipe and a plurality of fixing members are arranged correspondingly. In the gas inlet pipe and the corresponding plurality of fixing members, the plurality of fixing members are arranged along the first direction, and the gas inlet pipe is connected to the furnace tube through the corresponding fixing members.

2. The air intake structure of claim 1, wherein The containing passage comprises a plurality of hedge areas arranged along the first direction. In the same gas inlet pipe group, the gas holes on each gas inlet pipe are arranged correspondingly to the hedge areas, and the gas holes on each gas inlet pipe are directed towards the corresponding hedge areas.

3. The air intake structure of claim 1, wherein The distance between the hedge areas and the gas inlet pipe assembly along a direction perpendicular to the first direction is a first distance. The first distance of the plurality of hedge areas gradually decreases along a direction from an edge to a center of the furnace tube along the first direction.

4. The air intake structure of claim 3, wherein In the same gas inlet pipe group, the plurality of gas inlet pipes are arranged along a circumferential direction of the furnace tube. The distance between two adjacent gas inlet pipes along the circumferential direction of the furnace tube is a second distance, and the second distance between the two adjacent gas inlet pipes gradually decreases along a direction from an edge to a center of the furnace tube along the first direction.

5. The air intake structure according to any one of claims 1 to 4, characterized by On the same gas inlet pipe, the distance between two adjacent gas holes gradually decreases along a direction from an edge to a center of the furnace tube along the first direction. On the same gas inlet pipe, the opening size of the plurality of gas holes gradually increases along a direction from an edge to a center of the furnace tube along the first direction.

6. The air intake structure according to any one of claims 1 to 4, characterized by The first gas inlet pipe and the corresponding second gas inlet pipe have a spacing along the first direction.

7. The air intake structure according to any one of claims 1 to 4, characterized by The first gas inlet pipe and the corresponding second gas inlet pipe are arranged oppositely along the first direction.

8. The air intake structure of any one of claims 1-4, wherein Alternatively, the first gas inlet pipe and the corresponding second gas inlet pipe are arranged staggeredly along the first direction, the first gas inlet pipe is provided with a first auxiliary gas inlet pipe on a side facing the second gas inlet pipe, the second gas inlet pipe is provided with a second auxiliary gas inlet pipe on a side facing the first gas inlet pipe, and the first auxiliary gas inlet pipe and the second auxiliary gas inlet pipe are arranged oppositely along a circumferential direction of the furnace tube.

9. The air intake structure of claim 8, wherein The application relates to a gas inlet structure of a furnace tube. The gas inlet structure comprises a furnace tube extending along a first direction, a containing passage arranged in the furnace tube, a first passage opening and a second passage opening arranged at two ends of the furnace tube along the first direction and communicating with the containing passage respectively, two gas inlet pipe groups arranged in the containing passage, each of the gas inlet pipe groups comprising a plurality of gas inlet pipes, the gas inlet pipes of one of the two gas inlet pipe groups being first gas inlet pipes, the first gas inlet pipes extending from the first passage opening to a middle part of the furnace tube along the first direction, the gas inlet pipes of the other of the two gas inlet pipe groups being second gas inlet pipes, the second gas inlet pipes extending from the second passage opening to the middle part of the furnace tube, and each of the first gas inlet pipes and the corresponding second gas inlet pipe being used for connecting to the same gas source.

10. A deposition apparatus, characterized by, ​ ​

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