Processing device for removing powder in semiconductor etching metal aluminum process

Abstract

The utility model discloses a treatment device for removing powder in a semiconductor etching metal aluminum process. The treatment device comprises a gas inlet pipe, a nitrogen purging device and a dust removing device, processing waste gas is input into the gas inlet pipe, the nitrogen purging device comprises a nitrogen supply device and a heating device, the nitrogen supply device is connected with the gas inlet pipe, the heating device is arranged on the nitrogen supply device, and heated nitrogen is input into the gas inlet pipe; the dust removing device comprises a driving device and a scraper, the driving device is connected with the scraper and used for driving the scraper to move, and the scraper is arranged in the air inlet pipe. According to the nitrogen purging device, output nitrogen is heated through the nitrogen purging device, when process waste gas is laterally input into the gas inlet pipe, the process waste gas is purged through hot nitrogen above, and under the action of high temperature, aluminum chloride powder can enter the combustion cavity as much as possible in a gas state to be treated. And the driving device of the powder removing device drives the scraper to move to scrape the solidified aluminum chloride powder, so that the aluminum chloride powder is effectively prevented from being solidified and accumulated on the inner side wall of the air inlet pipe.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of semiconductor waste gas treatment, specifically, relate to a kind of for semiconductor etching aluminium technology removes powder processing device. BACKGROUND

[0002] Semiconductor manufacturing process can use many process gas and waste gas, main waste gas has Cl2, BCl3 and a large amount of PFC (Perfluorinated Compounds, perfluorinated compound) gas. In the process of etching, metal etching is the process that many manufacturing processes will involve, under the condition of etching aluminium, a lot of by-product aluminium chloride will be generated. Therefore, the gas generated after semiconductor manufacturing process carries dust (such as aluminium chloride dust).

[0003] The present semiconductor waste gas treatment device, under the process of metal etching aluminium, powder is easy to block in gas inlet pipeline, the main component of this powder is aluminium chloride and the powder is relatively hard, once the temperature is lower, the powder will accelerate condensation, so that the normal temperature nitrogen gas above the gas inlet pipeline cannot be purged, but will accelerate the speed of blockage, so that the machine table inlet pressure is high, which causes the machine table to alarm and shut down. SUMMARY

[0004] The utility model aims at providing a kind of for semiconductor etching aluminium technology removes powder processing device, which can effectively prevent the condensation of aluminium chloride powder in process waste gas on gas inlet pipeline, thereby causing the technical problem of higher machine table inlet pressure.

[0005] The embodiment of the utility model is realized as follows:

[0006] A kind of for semiconductor etching aluminium technology removes powder processing device of the application embodiment, including gas inlet pipe, nitrogen gas purging device and dust removal device;Process waste gas is input in the gas inlet pipe, the nitrogen gas purging device includes nitrogen gas supply device and heating device, the nitrogen gas supply device is connected with the gas inlet pipe for inputting nitrogen gas to the gas inlet pipe, the heating device is arranged on the nitrogen gas supply device for heating the nitrogen gas, and the heated nitrogen gas is input into the gas inlet pipe and is used to purge the dust of process waste gas input into the gas inlet pipe;The dust removal device includes driving device and scraper, the driving device is connected with the scraper for driving the scraper to move, the scraper is arranged in the gas inlet pipe and is used to scrape the dust deposited on the sidewall of the gas inlet pipe.

[0007] In a possible implementation, the processing device further comprises a waste gas input pipe connected to the sidewall of the air inlet pipe for inputting the process waste gas into the air inlet pipe; the nitrogen gas supply device comprises a nitrogen gas source and a nitrogen gas input pipe; one end of the nitrogen gas input pipe is connected to the nitrogen gas source, and the other end is connected to the sidewall of the top of the air inlet pipe.

[0008] In a possible implementation, the nitrogen gas purging device further comprises an inner pipe arranged at the top end inside the air inlet pipe, and a nitrogen gas outlet of the nitrogen gas input pipe is opposite to the outer sidewall of the inner pipe, so that the nitrogen gas input into the air inlet pipe purges the process waste gas from top to bottom.

[0009] In a possible implementation, the processing device further comprises a first control device electrically connected to the heating device, and the nitrogen gas purging device further comprises a temperature sensor arranged on the air inlet pipe for collecting the temperature value of the nitrogen gas inside the air inlet pipe, and the temperature sensor is electrically connected to the first control device; when the temperature value of the nitrogen gas exceeds a temperature threshold value, the first control device is configured to control the heating device to stop heating.

[0010] In a possible implementation, the heating device comprises a heating shell, a heating rod, and a power supply device; the heating shell is sleeved on the nitrogen gas input pipe, the heating rod is arranged in the heating shell, the power supply device is connected to the heating rod, and the first control device is electrically connected to the power supply device; when the temperature value of the nitrogen gas exceeds a temperature threshold value, the first control device is configured to control the power supply device to stop power supply.

[0011] In a possible implementation, the inner pipe and the air inlet pipe are both circular tubes, and the inner pipe is coaxially arranged with the air inlet pipe.

[0012] In a possible implementation, the dust removal device further comprises a rotating shaft, the driving device is arranged at the top end of the air inlet pipe, an output shaft of the driving device is coaxially connected to the rotating shaft, the rotating shaft is located inside the air inlet pipe and extends in the same direction as the length direction of the air inlet pipe, and the scraper is arranged on the rotating shaft; the driving device drives the rotating shaft to rotate to drive the scraper to rotate.

[0013] In a possible implementation, a plurality of scrapers are arranged on the rotating shaft at equal intervals and equal angles along the axis of the rotating shaft.

[0014] In possible implementation manners, a fixed cover plate is arranged at the top end of the air inlet pipe, the driving device is arranged on the fixed cover plate, and an output shaft of the driving device penetrates through the fixed cover plate and extends into the air inlet pipe to be connected with the rotating shaft.

[0015] In possible implementation manners, the rotating shaft is coaxially arranged with the air inlet pipe, and a gap is arranged between each scraper far away from the rotating shaft and the inner side wall of the air inlet pipe.

[0016] The beneficial effects of the embodiment of the utility model are: the application changes the current air inlet direction of the machine table from the top-in type to the side-in type, and a nitrogen purging device is arranged above the air inlet pipe. The nitrogen purging device can heat the output nitrogen, and the hot nitrogen above blows the process waste gas when the process waste gas is input into the air inlet pipe laterally. Under the action of high temperature, the aluminum chloride powder will enter the combustion chamber for treatment in the gaseous state as much as possible. With the increase of the path of the hot nitrogen, the temperature of the hot nitrogen will decrease, and a small amount of aluminum chloride powder will condense inside the pipe wall. At this time, the driving device of the powder removing device drives the scraper to move, and the condensed aluminum chloride powder is scraped off, so that the aluminum chloride powder is prevented from condensing and accumulating on the inner side wall of the air inlet pipe, the air inlet pipe is ensured to have smooth ventilation, the pressure of the machine table is stable, and the machine table is prevented from being shut down. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical scheme of the embodiment of the utility model, the following will briefly introduce the drawings needed to be used in the embodiment, and it should be understood that the following drawings only show some embodiments of the utility model, and should not be regarded as a limitation to the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0018] Figure 1 It is a structural diagram of the existing semiconductor waste gas treatment device;

[0019] Figure 2 It is a whole structural diagram of the treatment device for removing powder in the process of etching metal aluminum of the semiconductor according to the embodiment of the utility model;

[0020] Figure 3 It is a structural diagram of the heating device of the treatment device for removing powder in the process of etching metal aluminum of the semiconductor according to the embodiment of the utility model;

[0021] Figure 4 It is a structural diagram of the nitrogen purging device of the treatment device for removing powder in the process of etching metal aluminum of the semiconductor according to the embodiment of the utility model;

[0022] Figure 5The structural diagram of a driving device of a processing device for removing powder in a semiconductor etching aluminum process of an embodiment of the present application;

[0023] Figure 6 The structural diagram of a dust removing device of a processing device for removing powder in a semiconductor etching aluminum process of an embodiment of the present application;

[0024] Figure 7 The structural diagram of a scraper and a rotating shaft of a processing device for removing powder in a semiconductor etching aluminum process of an embodiment of the present application.

[0025] Icon: 1, air inlet pipe; 11, fixed cover plate; 2, nitrogen purging device; 21, heating device; 211, heating shell; 212, heating rod; 22, inner pipe; 23, nitrogen input pipeline; 3, dust removing device; 31, driving device; 32, scraper; 33, rotating shaft; 4, waste gas input pipeline; 5, temperature sensor. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, rather than all the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0027] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0028] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0029] In the description of the utility model, it needs to be explained that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly placed when the utility model product is used, which is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the utility model. In addition, the terms "first", "second", "third" and the like are only used for differentiation in description and cannot be understood as indicating or implying relative importance.

[0030] In addition, the terms "horizontal", "vertical" and the like do not mean that the components must be absolutely horizontal or hanging, but can be slightly inclined. For example, "horizontal" only means that its direction is relatively more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0031] In the description of the utility model, it also needs to be explained that, unless otherwise explicitly specified and limited, the terms "set", "install", "connect", "connect" should be broadly understood, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For ordinary skilled persons in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0032] As shown in Figure 1 The current semiconductor waste gas treatment device does not have a powder removal device, and under the process of etching aluminum, powder is easy to block in the gas inlet pipe 1. The main component of the powder is aluminum chloride and the powder is relatively hard. Once the temperature of the aluminum chloride powder is low, it will accelerate condensation. Therefore, the normal temperature nitrogen gas above the gas inlet pipe 1 cannot be purged, but will accelerate the blocking speed, so that the machine inlet pressure is high, which causes the machine to alarm and shut down.

[0033] As shown in Figure 2As shown, the present application changes the current machine intake direction, from top-in to side-in, nitrogen purging device 2 is arranged above intake pipe 1, nitrogen purging device 2 can heat the output nitrogen, when the process exhaust gas is input into intake pipe 1 laterally, the hot nitrogen above purges the process exhaust gas, under the action of high temperature, the aluminum chloride powder will enter the combustion chamber as much as possible in the gaseous state. With the increase of the path of hot nitrogen, its temperature will also decrease, and a small amount of aluminum chloride powder will still condense inside the wall of intake pipe 1, at this time, the driving device 31 of powder removal device 3 drives scraper 32 to move, and the condensed aluminum chloride powder is scraped off, effectively avoiding the condensation and accumulation of aluminum chloride powder on the inside wall of intake pipe 1, thereby ensuring smooth air flow of intake pipe 1, stable machine pressure, and avoiding machine downtime.

[0034] The processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the present application comprises intake pipe 1, nitrogen purging device 2 and dust removal device 3; process exhaust gas is input into intake pipe 1, nitrogen purging device 2 comprises nitrogen supply device and heating device 22, the nitrogen supply device is connected with intake pipe 1 for inputting nitrogen into intake pipe 1, the heating device 22 is arranged on the nitrogen supply device for heating nitrogen, and the heated nitrogen is input into intake pipe 1 and used for purging the dust of the process exhaust gas input into intake pipe 1; dust removal device 3 comprises driving device 31 and scraper 32, the driving device 31 is connected with scraper 32 for driving scraper 32 to move, and scraper 32 is arranged in intake pipe 1 and used for scraping the dust deposited on the inside wall of intake pipe 1.

[0035] In combination with the above embodiment, as shown, Figure 2 When the process exhaust gas is input into intake pipe 1, the heated nitrogen is input into intake pipe 23 by nitrogen purging device 2, thereby realizing the heating of the process exhaust gas inside the intake pipe, avoiding the condensation of aluminum chloride powder in the process exhaust gas due to the decrease of temperature. The temperature of the heated process exhaust gas will gradually decrease in the subsequent conveying process, and a small amount of aluminum chloride powder in the process exhaust gas may condense, thereby accumulating on the inside wall of intake pipe 1, at this time, the driving device 31 of dust removal device 3 drives scraper 32 to rotate, and the aluminum chloride powder accumulated on the inside wall of intake pipe 1 is scraped off, thereby effectively avoiding the accumulation of a large amount of aluminum chloride powder on the inside wall of intake pipe 1, thereby ensuring smooth air flow of intake pipe 1, stable machine pressure, and avoiding machine downtime.

[0036] The processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the present application, the processing device further comprises exhaust gas input pipeline 4, the exhaust gas input pipeline 4 is connected with the side wall of intake pipe 1 for inputting process exhaust gas into intake pipe 1; the nitrogen supply device comprises nitrogen source and nitrogen input pipeline 23; one end of the nitrogen input pipeline 23 is connected with the nitrogen source, and the other end is connected with the side wall of the top of intake pipe 1.

[0037] In combination with the above embodiment, as shown in Figure 2 and Figure 4 The exhaust gas input pipe 4 is connected to the outer side wall of the middle part of the air inlet pipe 1 and communicates with the air inlet pipe, and the process exhaust gas is input into the air inlet pipe 1 through the exhaust gas input pipe 4. The nitrogen gas input pipe 3 of the nitrogen gas supply device is connected to the side wall of the top of the air inlet pipe 1, and the heated nitrogen gas is input at the top of the air inlet pipe 1 to realize the top-down blowing and heating of the process exhaust gas, so that the aluminum chloride powder is in the gaseous state as much as possible to enter the subsequent combustion chamber to realize the redox reaction, and avoid the accumulation of a large amount of aluminum chloride solid on the inner side wall of the air inlet pipe 1 to block the air inlet pipe 1.

[0038] The processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the application further comprises an inner pipe 22, the inner pipe 22 is arranged at the top end inside the air inlet pipe 1, and the nitrogen gas outlet of the nitrogen gas input pipe 23 is opposite to the outer side wall of the inner pipe 22, so that the nitrogen gas input into the air inlet pipe 1 blows the process exhaust gas from top to bottom.

[0039] In combination with the above embodiment, as shown in Figure 1 and Figure 4 The inner pipe 22 is located inside the top end of the air inlet pipe 1, and after the heated nitrogen gas is blown into the air inlet pipe 1, it first flows along the outer side wall of the inner pipe 22. With the increase of the input amount of nitrogen gas, the heated nitrogen gas blows the process exhaust gas from top to bottom along the outer side wall of the inner pipe 22, so as to realize sufficient blowing and heating of the process exhaust gas.

[0040] The processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the application further comprises a first control device, the first control device is electrically connected with the heating device 21, and the nitrogen gas blowing device 2 further comprises a temperature sensor 5; the temperature sensor 5 is arranged on the air inlet pipe 1 and used for collecting the temperature value of the nitrogen gas inside the air inlet pipe 1, and the temperature sensor 5 is electrically connected with the first control device; when the temperature value of the nitrogen gas exceeds a temperature threshold value, the first control device is used for controlling the heating device 21 to stop heating.

[0041] In combination with the above embodiment, the temperature sensor 5 is used for collecting the temperature of the nitrogen gas input into the air inlet pipe 1 in real time, and the heating temperature value can be set on the screen of the machine. In order to avoid that the heating temperature is too high, when the temperature sensor 5 detects that the temperature value of the heated nitrogen gas exceeds the temperature threshold value, the first control device controls the heating device 21 to stop heating and sends an alarm signal, so as to ensure the safety of heating.

[0042] The processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the application comprises a heating device 21, the heating device 21 comprises a heating shell 211, a heating rod 212 and a power supply device; the heating shell 211 is sleeved on the nitrogen gas input pipeline 23, the heating rod 212 is arranged in the heating shell 211, the power supply device is connected with the heating rod 212, and a first control device is electrically connected with the power supply device; when the temperature value of the nitrogen gas exceeds a temperature threshold value, the first control device is used for controlling the power supply device to stop power supply.

[0043] In combination with the above embodiment, as shown in Figure 3 The heating shell sleeve 211 is arranged on the outer side wall of the nitrogen gas input pipeline 23, the heating rod 212 is arranged in the heating shell 211 and contacts the nitrogen gas input pipeline 23, the heating rod 212 is heated through the power supply device, so that the nitrogen gas in the input gas pipeline 1 is heated. When the temperature value of the nitrogen gas exceeds the temperature threshold value, the first control device is used for controlling the power supply device to stop power supply and sending an alarm signal, so as to ensure the heating safety.

[0044] The processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the application, the inner tube 22 and the gas pipeline 1 are both circular tubes, the inner tube 22 is coaxially arranged with the gas pipeline 1, the spacing between the outer side wall of the inner tube 22 and the inner side wall of the gas pipeline 1 is the same, which can ensure the temperature of the nitrogen gas conveying and is beneficial to the blowing and heating of the process waste gas from top to bottom.

[0045] The processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the application, the dust removal device 3 further comprises a rotating shaft 33, the driving device 31 is arranged at the top end of the gas pipeline 1, the output shaft of the driving device 31 is coaxially connected with the rotating shaft 33, the rotating shaft 33 is located in the gas pipeline 1 and extends in the same direction as the length direction of the gas pipeline 1, and the scraper 32 is arranged on the rotating shaft 33; the driving device 31 drives the rotating shaft 33 to rotate to drive the scraper 32 to rotate. In addition, the scraper 32 is provided in plurality, the plurality of scrapers 32 are arranged on the rotating shaft 33 at equal intervals and equal angles along the axis of the rotating shaft 33.

[0046] In combination with the above embodiment, the plurality of scrapers 32 can sufficiently scrape the accumulated aluminum chloride powder on the inner side wall of the gas pipeline 1, so as to clean the attached aluminum chloride solid powder as much as possible and effectively avoid the accumulation of the aluminum chloride powder on the inner side wall of the gas pipeline 1.

[0047] As shown in Figures 5 to 7As shown, the processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the application is provided with a fixed cover plate 11 at the top end of the air inlet pipe 1, the driving device 31 is arranged on the fixed cover plate 11, the output shaft of the driving device 31 penetrates through the fixed cover plate 11 and extends into the air inlet pipe 1 to be connected with the rotating shaft 33. The driving device 31 can be a driving motor, a servo motor or the like, the fixed cover plate 11 provides a mounting position for the driving device 31 and the inner pipe 22, and simultaneously realizes the closure of the top of the air inlet pipe 1, so as to avoid that the process waste gas flows out through the top of the air inlet pipe 1.

[0048] The processing device for removing powder in the semiconductor etching aluminum process of the embodiment of the application is provided with the rotating shaft 33 coaxially arranged with the air inlet pipe 1, and a set gap is arranged between the side of each scraper 32 away from the rotating shaft 33 and the inner side wall of the air inlet pipe 1. In addition, a sensor for detecting the working state of the scraper 32 can also be arranged, once the scraper 32 is stuck or fails, the machine table gives a warning and needs to be repaired, the number of rotations of the scraper 32 can be set on the screen, and the number of rotations can be better defined according to the process of metal etching.

[0049] The above only describes the preferred embodiments of the present application and is not used to limit the present application. For those skilled in the art, the present application can be variously changed and modified. Any modification, equivalent replacement, improvement and the like within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A processing apparatus for removing powder from a semiconductor etching aluminum process, characterized by, The processing device comprises an air inlet pipe, a nitrogen purging device and a dust removing device; the air inlet pipe is internally connected with process exhaust gas; the nitrogen purging device comprises a nitrogen supply device and a heating device; the nitrogen supply device is connected with the air inlet pipe for inputting nitrogen into the air inlet pipe; the heating device is arranged on the nitrogen supply device for heating the nitrogen; the heated nitrogen is input into the air inlet pipe and used for purging the dust of the process exhaust gas input into the air inlet pipe; the dust removing device comprises a driving device and a scraper; the driving device is connected with the scraper for driving the scraper to move; the scraper is arranged in the air inlet pipe and used for scraping the dust deposited on the sidewall of the air inlet pipe.

2. The apparatus for removing powder from a semiconductor etching aluminum process of claim 1, wherein, The processing device further comprises an exhaust gas input pipe connected with the sidewall of the air inlet pipe for inputting the process exhaust gas into the air inlet pipe; the nitrogen supply device comprises a nitrogen source and a nitrogen input pipe; one end of the nitrogen input pipe is connected with the nitrogen source and the other end is connected with the sidewall of the top of the air inlet pipe.

3. The apparatus for removing powder from a semiconductor etching aluminum process of claim 2, wherein, The nitrogen purging device further comprises an inner pipe arranged at the top of the air inlet pipe; the nitrogen outlet of the nitrogen input pipe is opposite to the outer sidewall of the inner pipe so that the nitrogen input into the air inlet pipe can purify the process exhaust gas from top to bottom.

4. The apparatus for removing powder from a semiconductor etching aluminum process of claim 3, wherein, The processing device further comprises a first control device electrically connected with the heating device; the nitrogen purging device further comprises a temperature sensor; the temperature sensor is arranged on the air inlet pipe for collecting the temperature value of the nitrogen in the air inlet pipe; the temperature sensor is electrically connected with the first control device; when the temperature value of the nitrogen exceeds a temperature threshold, the first control device is used for controlling the heating device to stop heating.

5. The apparatus for removing powder from a semiconductor etching aluminum process of claim 4, wherein, The heating device comprises a heating shell, a heating rod and a power supply device; the heating shell is sleeved on the nitrogen input pipe; the heating rod is arranged in the heating shell; the power supply device is connected with the heating rod; the first control device is electrically connected with the power supply device; when the temperature value of the nitrogen exceeds a temperature threshold, the first control device is used for controlling the power supply device to stop power supply.

6. The apparatus for removing powder from a semiconductor etching aluminum process of claim 3, wherein, The inner pipe and the air inlet pipe are both circular pipes; the inner pipe is coaxially arranged with the air inlet pipe.

7. The apparatus for removing powder from a semiconductor etching aluminum process of claim 1, wherein, The dust removing device further comprises a rotating shaft; the driving device is arranged at the top of the air inlet pipe; the output shaft of the driving device is coaxially connected with the rotating shaft; the rotating shaft is arranged in the air inlet pipe and extends in the same direction as the length direction of the air inlet pipe; the scraper is arranged on the rotating shaft; the driving device drives the rotating shaft to rotate so as to drive the scraper to rotate.

8. The apparatus for removing powder from a semiconductor etching aluminum process of claim 7, wherein, The scraper is arranged in plurality; the plurality of scrapers are equidistantly and equiangularly arranged on the rotating shaft along the axis of the rotating shaft.

9. The apparatus for removing powder from a semiconductor etching aluminum process of claim 8, wherein, The top of the air inlet pipe is provided with a fixed cover plate; the driving device is arranged on the fixed cover plate; the output shaft of the driving device penetrates through the fixed cover plate and extends into the air inlet pipe to be connected with the rotating shaft.

10. The apparatus for removing powder from a semiconductor etching aluminum process of claim 7, wherein, The rotating shaft is coaxial with the air inlet pipe, and a gap is arranged between the inner side wall of the air inlet pipe and the side of each scraper away from the rotating shaft.

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