Packaging shuttle and structure comprising same

Abstract

An encapsulated shuttle, and a structure including such an encapsulated shuttle, includes a lower shuttle assembly including a first lower shuttle structural element, an array of thermally conductive plates positioned over the first lower shuttle structural element, and at least one second lower shuttle structural element including an array of shuttle openings therethrough. An array of shuttle openings overlies the array of thermally conductive plates and is configured to receive the array of semiconductor packages therein. The packaging shuttle may also include an upper shuttle assembly including a carrier substrate and an array of packaging clips attached to a bottom surface of the carrier substrate. The array of packaging clips is configured to mate with the lower shuttle assembly such that when the lower shuttle assembly is mated with the upper shuttle assembly, the lower shuttle assembly is stationary to prevent lateral movement relative to the upper shuttle assembly.

Description

TECHNICAL FIELD

[0001] Embodiments of the present utility model relate to a package shuttle and a structure comprising the same. BACKGROUND

[0002] Semiconductor packages contain integrated circuits or chips that are susceptible to damage from mechanical shock during shipping. Package shuttles configured to ship semiconductor packages can experience thermal expansion at high temperatures, which can cause undesirable contact between the edges of the semiconductor packages and the package shuttle. This undesirable contact can cause misalignment, collision, or dropping of some semiconductor packages. A secure package shuttle that can provide reliable shipping of semiconductor packages is needed. SUMMARY

[0003] The present utility model aims to provide a package shuttle and a structure comprising the same to solve at least one of the above problems.

[0004] Some embodiments of the present utility model provide a package shuttle. The package shuttle comprises a lower shuttle assembly, wherein the lower shuttle assembly comprises a first lower shuttle structural element, an array of conductive plates, and at least one second lower shuttle structural element. The array of conductive plates is positioned above the first lower shuttle structural element. The at least one second lower shuttle structural element comprises an array of shuttle openings therethrough, wherein the array of shuttle openings overlies the array of conductive plates and is configured to accommodate an array of semiconductor packages therein.

[0005] According to one embodiment of the present utility model, each shuttle opening in the array of shuttle openings is positioned within a region of a perimeter of a corresponding conductive plate in the array of conductive plates in a plan view.

[0006] According to one embodiment of the present utility model, the lower shuttle assembly comprises an array of cavities positioned below the array of shuttle openings, such that each cavity selected from the array of cavities is positioned below a corresponding shuttle opening selected from the array of shuttle openings and has a larger lateral extent than the corresponding shuttle opening, wherein: the array of shuttle openings comprises a first sidewall array of the at least one second lower shuttle structural element; and a bottom perimeter of the first sidewall array of the at least one second lower shuttle structural element is positioned above a horizontal plane comprising a top surface of the array of conductive plates.

[0007] According to one of the embodiments of the present application, each of the heat-conductive plates in the array of heat-conductive plates is laterally spaced apart from a combination of the first lower shuttle structural element and the at least one second lower shuttle structural element by a lateral gap, and wherein each of the heat-conductive plates in the array of heat-conductive plates is vertically spaced apart from a respective overhanging portion of the at least one second lower shuttle structural element by a vertical gap.

[0008] According to one of the embodiments of the present application, the first lower shuttle structural element comprises a non-perforated plate having a flat top surface located below a horizontal plane comprising a bottom surface of the array of heat-conductive plates, and the at least one second lower shuttle structural element comprises a perforated plate comprising a plurality of stepped openings therethrough, wherein each of the plurality of stepped openings comprises a respective shuttle opening in the array of shuttle openings and further comprises a respective plate-level opening in a plate-level array of openings, the respective plate-level opening having a larger area than the respective shuttle opening.

[0009] According to one of the embodiments of the present application, the first lower shuttle structural element comprises a non-perforated plate comprising an array of recessed cavities, wherein the array of heat-conductive plates is located within the array of recessed cavities, and the at least one second lower shuttle structural element comprises a perforated plate comprising the array of shuttle openings therethrough, wherein each of the array of shuttle openings overlies a respective recessed cavity in the array of recessed cavities and has a smaller area than the respective recessed cavity.

[0010] According to one of the embodiments of the present application, the first lower shuttle structural element comprises a frame comprising a two-dimensional array of stepped recessed cavities, wherein each of the two-dimensional array of stepped recessed cavities has a larger lateral dimension at an upper portion than at a lower portion, and the at least one second lower shuttle structural element comprises an array of perforated inserts located within the upper portions of the two-dimensional array of stepped recessed cavities, wherein each of the array of perforated inserts comprises a respective shuttle opening in the array of shuttle openings.

[0011] According to one of the embodiments of the present application, further comprising an upper shuttle assembly, wherein the upper shuttle assembly comprises: a carrier substrate; and an array of packaging clamps attached to a bottom surface of the carrier substrate, wherein the array of packaging clamps is configured to cooperate with the lower shuttle assembly such that, when the lower shuttle assembly cooperates with the upper shuttle assembly, the lower shuttle assembly is fixedly immobile to prevent lateral movement relative to the upper shuttle assembly.

[0012] Some embodiments of the present application provide a structure comprising a package shuttle. The package shuttle comprises a lower shuttle assembly, wherein the lower shuttle assembly comprises a first lower shuttle structural element, an array of thermal interface material plates, an array of conductive plates, and at least a second lower shuttle structural element. The array of thermal interface material plates is positioned on the first lower shuttle structural element. The array of conductive plates is positioned on the array of thermal interface material plates. The at least a second lower shuttle structural element comprises an array of shuttle openings therethrough, wherein the array of shuttle openings overlies the array of conductive plates and is configured to receive an array of semiconductor packages therein.

[0013] According to one embodiment of the present application, the thermal conductivity of each of the first lower shuttle structural element and the at least a second lower shuttle structural element is less than the thermal conductivity of the array of conductive plates, and wherein the package shuttle comprises a heater element attached to a bottom surface of the first lower shuttle structural element. BRIEF DESCRIPTION OF DRAWINGS

[0014] The concept of the embodiments of the present application will be better understood from the following detailed description with reference to the accompanying drawings. It should be noted that the various features of the drawings are not necessarily drawn to scale. In fact, the dimensions of the various features can be arbitrarily expanded or reduced for the sake of clarity.

[0015] FIG. 1A is a vertical cross-sectional view of the intermediate first embodiment structure after the first lower shuttle structural element, the array of thermal interface material plates, and the array of conductive plates are disposed over the heater element according to some embodiments of the present application.

[0016] FIG. 1B is a top-down view of the intermediate first embodiment structure of FIG. 1A the vertical cross-sectional view of FIG. 1A is taken along the vertical plane A-A' in FIG. 1B .

[0017] FIG. 2A is a vertical cross-sectional view of the intermediate first embodiment structure after the lower shuttle assembly is formed according to some embodiments of the present application.

[0018] FIG. 2B is a top-down view of the intermediate first embodiment structure of FIG. 2A the vertical cross-sectional view of FIG. 2A is taken along the vertical plane A-A' inFIG. 2B It is intercepted by the vertical plane A-A' in the middle.

[0019] FIG. 3A This is a vertical cross-sectional view of the intermediate first embodiment structure after the semiconductor packaging array is set up in the array of shuttle openings, according to some embodiments of the present invention.

[0020] FIG. 3B yes FIG. 3A A top-down view of the structure of the first embodiment in the middle, wherein FIG. 3A The vertical cross-section is along FIG. 3B It is intercepted by the vertical plane A-A' in the middle.

[0021] FIG. 4 This is a vertical cross-sectional view of the intermediate first embodiment structure after the upper shuttle assembly is positioned on the lower shuttle assembly, according to some embodiments of the present invention.

[0022] FIG. 5 This is a vertical cross-sectional view of an intermediate first embodiment structure according to some embodiments of the present invention, after fixing the semiconductor package array by placing the upper shuttle assembly on the lower shuttle assembly.

[0023] FIG. 6 This is a vertical cross-sectional view of the structure of the first embodiment after using the upper shuttle assembly to lift the semiconductor package array according to some embodiments of the present invention.

[0024] FIG. 7A This is a vertical cross-sectional view of the intermediate second embodiment structure after a second lower shuttle structure element, a thermal interface material plate array, and a heat-conducting plate array are provided on top of the heater element, according to some embodiments of the present invention.

[0025] FIG. 7B yes FIG. 7A A top-down view of the structure of the middle second embodiment, wherein FIG. 7A The vertical cross-section is along FIG. 7B It is intercepted by the vertical plane A-A' in the middle.

[0026] FIG. 8A This is a vertical cross-sectional view of the intermediate second embodiment structure after the lower shuttle assembly has been formed, according to some embodiments of the present invention.

[0027] FIG. 8B yes FIG. 8A A top-down view of the structure of the middle second embodiment, wherein FIG. 8A The vertical cross-section is along FIG. 8B It is intercepted by the vertical plane A-A' in the middle.

[0028] FIG. 9A is a vertical cross-sectional view of the intermediate second embodiment structure after positioning the upper shuttle assembly on top of the lower shuttle assembly according to some embodiments of the present invention.

[0029] FIG. 9B is a top-down bottom view of the intermediate second embodiment structure of FIG. 9A wherein the vertical cross-sectional view of FIG. 9A is taken along the vertical plane A-A' in FIG. 9B .

[0030] FIG. 10 is a vertical cross-sectional view of the intermediate second embodiment structure after setting the semiconductor package array within the shuttle opening array according to some embodiments of the present invention.

[0031] FIG. 11 is a vertical cross-sectional view of the intermediate second embodiment structure after securing the semiconductor package array by setting the upper shuttle assembly on the lower shuttle assembly according to some embodiments of the present invention.

[0032] FIG. 12 is a vertical cross-sectional view of the second embodiment structure after lifting the semiconductor package array using the upper shuttle assembly according to some embodiments of the present invention.

[0033] FIG. 13A is a vertical cross-sectional view of the intermediate third embodiment structure after setting the third lower shuttle structure element, the thermal interface material plate array, and the heat conducting plate array on top of the heater element according to some embodiments of the present invention.

[0034] FIG. 13B is a top-down bottom view of the intermediate third embodiment structure of FIG. 13A wherein the vertical cross-sectional view of FIG. 13A is taken along the vertical plane A-A' in FIG. 13B .

[0035] FIG. 14A is a vertical cross-sectional view of the intermediate third embodiment structure after forming the lower shuttle assembly according to some embodiments of the present invention.

[0036] FIG. 14B is a top-down bottom view of the intermediate third embodiment structure of FIG. 14A wherein the vertical cross-sectional view of FIG. 14A is taken along the vertical plane A-A' in FIG. 14B .

[0037] FIG. 15A is a vertical cross-sectional view of the intermediate third embodiment structure after setting the semiconductor package array within the shuttle opening array according to some embodiments of the present invention.

[0038] FIG. 15B is FIG. 15A a top-down view of the intermediate third embodiment structure of FIG. 15A is a vertical cross-sectional view taken along FIG. 15B in the vertical plane A-A’.

[0039] FIG. 16 is a vertical cross-sectional view of the intermediate third embodiment structure after positioning the upper shuttle assembly over the lower shuttle assembly in accordance with some embodiments of the present invention.

[0040] FIG. 17 is a vertical cross-sectional view of the intermediate third embodiment structure after securing the semiconductor package array by disposing the upper shuttle assembly over the lower shuttle assembly in accordance with some embodiments of the present invention.

[0041] FIG. 18 is a vertical cross-sectional view of the third embodiment structure after lifting the semiconductor package array using the upper shuttle assembly in accordance with some embodiments of the present invention.

[0042] FIG. 19 is a flowchart showing the general processing steps for manufacturing the device structure in accordance with various embodiments of the present invention.

[0043] Reference numerals are as follows:

[0044] 20: lower shuttle assembly

[0045] 22: shuttle plate assembly

[0046] 22B: first lower shuttle structural element / bottom shuttle plate

[0047] 22T: top shuttle plate

[0048] 22F: shuttle frame

[0049] 22I: through-hole insert

[0050] 24: thermal interface material plate

[0051] 25: cavity

[0052] 25’: recessed cavity

[0053] 26: thermally conductive plate

[0054] 27: shuttle opening

[0055] 29: stepped recessed cavity

[0056] 291: first sidewall

[0057] 292: second sidewall

[0058] 293: horizontal surface

[0059] 30: heater element

[0060] 40: protrusion

[0061] 60: upper shuttle assembly

[0062] 62: carrier substrate

[0063] 64: lower clamp portion

[0064] 66: upper clamp portion

[0065] 68: fastening element

[0066] 69: cavity

[0067] 80: semiconductor package

[0068] 88: solder material portion

[0069] 1910, 1920, 1930, 1940: steps

[0070] P: perimeter

[0071] UA: unit area

[0072] LG1: first lateral gap

[0073] LG2: second lateral gap

[0074] VG: vertical gap

[0075] A-A’: vertical plane DETAILED DESCRIPTION

[0076] The following disclosure provides many different embodiments, or examples, for implementing different features of the present embodiments. Specific examples of components and configurations are described below to provide a thorough description of embodiments of the present embodiments. Of course, it will be apparent that the specific examples described below are simply that, and are not intended to limit the present embodiments. For example, the description below refers to forming a first feature on or over a second feature, which can include embodiments where the first and second features are directly in contact, or embodiments where additional features are formed between the first and second features such that the first and second features can not be directly in contact. In addition, the present embodiments can repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.

[0077] Furthermore, spatially relative terms, such as "beneath", "below", "lower", "above", "upper", and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The devices can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. Unless otherwise noted, each element including like reference numerals refers to the same element or feature throughout the description and drawings.

[0078] Various embodiments of the present utility model relate to a package shuttle, a semiconductor structure using the package shuttle, and a method of operating the package shuttle to transport semiconductor packages. Semiconductor packages can contain integrated circuits or chips, which are delicate components that need to be securely held and transported during various stages of manufacturing and testing. A package shuttle including an array of package clamps can be used to transport an array of semiconductor packages in a protected environment. The package shuttle can alternatively be referred to as a package carrier or a package handler. According to one aspect of the present utility model, a package shuttle is provided in which semiconductor packages are thermally coupled to heater elements, while portions of the package shuttle laterally surrounding the semiconductor packages can have less thermal coupling to the heater elements. In this way, semiconductor packages loaded into the package shuttle can be heated to high temperatures during transport without causing mechanical damage to the semiconductor packages due to thermal expansion. Various embodiments of the present utility model are now described with reference to the accompanying drawings.

[0079] Referring to FIG. 1A and FIG. 1B , a first embodiment structure is shown according to some embodiments of the present utility model. The first embodiment structure includes a first lower shuttle structural element 22B that is located on a heater element 30. The first lower shuttle structural element 22B is a structural element that is used to form a lower shuttle assembly that is incorporated into a package shuttle to transport a plurality of semiconductor packages.

[0080] In some embodiments, the first lower shuttle structural element 22B is a structural element having an unperforated plate configuration with a uniform thickness and without any openings therethrough. In this configuration, the first lower shuttle structural element 22B is referred to as a bottom shuttle plate 22B. The thickness of the bottom shuttle plate 22B can be in the range of 1 mm to 3 mm, although smaller or larger thicknesses can also be used. In some embodiments, the bottom shuttle plate 22B can comprise a metallic or semiconductor material having a coefficient of thermal expansion of less than 1.22 x 10 -5 / K at 20 degrees Celsius, and / or preferably less than 1.0 x 10 -5 / K at 20 degrees Celsius. For example, the bottom shuttle plate 22B can comprise a metallic material such as W, Fe, Mo, Ti, Ta, and alloys thereof; or a metal nitride material such as WN, TiN, TaN, MoN, and alloys thereof; or a semiconductor material such as polysilicon or single crystal silicon.

[0081] The heater element 30 can comprise any form of heater element configured to provide heat to the bottom shuttle plate 22B. For example, the heater element 30 can comprise an embedded thermal resistance heater having a temperature control mechanism configured to control the temperature of the heater element 30 at a predetermined target temperature, which can be any temperature greater than room temperature (i.e., 20 degrees Celsius). A programmable temperature controller (not shown) and a power supply line (not shown) can be attached to the heater element 30 such that the heater element 30 is powered during subsequent transport of the packaged shuttles.

[0082] In general, the semiconductor shuttle can be configured to transport an array of semiconductor packages, such as an M x N rectangular array of semiconductor packages. M can be a number in the range of 2 to 100, and N can be a number in the range of 2 to 100, although larger numbers can also be used for each of M and N. FIG. 1A and FIG. 1B The area shown in FIG. 1 corresponds to an area of the first embodiment structure for transporting a 2 x 2 array of semiconductor packages. Thus, the area shown can be smaller than the entirety of the first embodiment structure. In general, the repeating unit area UA can be repeated in two different horizontal directions to provide a packaged shuttle that can transport an array of semiconductor packages. Furthermore, while a rectangular array is shown in the present disclosure, a non-rectangular periodic array or a non-periodic array such as a hexagonal array can also be used. Thus, the present disclosure is not limited to any particular type of array configuration.

[0083] An array of thermal interface material plates 24 can be formed on a top surface of the bottom shuttle plate 22B. The thermal interface material plates 24 include a thermal interface material, which is a material that improves the thermal coupling between two surfaces by filling gaps and enhancing the heat transfer between the two surfaces. The thermal interface material can include a thermal grease, a thermal pad, a thermal paste, a metal-based thermal interface material, etc. The thermal interface material of the thermal interface material plates 24 can have a thermal conductivity greater than 0.026 W / m-K, and / or can desirably be greater than 0.1 W / m-K, and / or can desirably be greater than 1 W / m-K. The thickness of the thermal interface material plates 24 can be in a range of 100 microns to 500 microns, although lesser or greater thicknesses can also be used. The thermally conductive material can be applied and patterned over the top surface of the bottom shuttle plate 22B to form the array of thermal interface material plates 24.

[0084] The array of thermal interface material plates 24 can be arranged in a pattern of the array of shuttle openings 27 for later use in accommodating the array of semiconductor packages. Each thermal interface material plate 24 is formed within a respective unit area UA. The array of thermal interface material plates 24 can be formed as a two-dimensional periodic array, such as a rectangular array. Each thermal interface material plate 24 can have a greater area than the area of the respective shuttle opening 27 that is later formed thereover. Thus, each thermal interface material plate 24 has a greater area than the area of the semiconductor package that is later placed thereover. In non-limiting illustrative examples, each thermal interface material plate 24 can have a length greater than 31 mm and / or 40 mm and / or 50 mm and / or 60 mm, and can have a width greater than 31 mm and / or 40 mm and / or 50 mm and / or 60 mm.

[0085] An array of conductive plates 26 can be formed over the array of thermal interface material plates 24, such as by directly attaching the array of conductive plates 26 to the array of thermal interface material plates 24, or by depositing and patterning a thermally conductive material. The array of conductive plates 26 can include a metallic material that provides a thermal conductivity greater than 70 W / m-K. In some embodiments, the array of conductive plates 26 includes a metallic material that has a thermal conductivity at least 10 times greater than the thermal conductivity of the material of the array of thermal interface material plates 24.

[0086] In illustrative examples, the array of thermally conductive plates 26 can comprise and / or can substantially consist of a metal, such as silver, copper, gold, aluminum, tungsten, nickel, iron, platinum, etc. Other suitable thermally conductive materials are also within the contemplation of the present disclosure. The thickness of the thermally conductive plates 26 can be in the range of 0.5 mm to 3 mm, although lesser or greater thicknesses can also be used. The dimensions of the thermally conductive plates 26 are less than the dimensions of the corresponding underlying thermal interface material plates 24. In some embodiments, each thermally conductive plate 26 can be laterally offset inwardly from the nearest perimeter of the corresponding underlying thermal interface material plate 24 by a lateral offset distance in the range of 25 microns to 500 microns (e.g., 50 microns to 300 microns).

[0087] Generally, the heater element 30 can be attached to a bottom surface of a first lower shuttle structure element (e.g., the bottom shuttle plate 22B). In some embodiments, the first lower shuttle structure element can comprise a non-perforated plate (e.g., the bottom shuttle plate 22B) having a flat top surface that is located below the horizontal plane of the bottom surface that includes the array of thermally conductive plates 26. The array of thermal interface material plates 24 can be in contact with the first lower shuttle structure element (e.g., the bottom shuttle plate 22B). Each thermal interface material plate 24 in the array of thermal interface material plates 24 is in contact with a bottom surface of a corresponding thermally conductive plate 26 in the array of thermally conductive plates 26.

[0088] Referring to FIG. 2A and FIG. 2B , a second lower shuttle structure element is provided that includes an array of shuttle openings 27 therethrough. In some embodiments, the second lower shuttle structure element can comprise a perforated plate, which is referred to herein as the top shuttle plate 22T. The top shuttle plate 22T includes an array of stepped openings therethrough. As used herein, a “stepped opening” refers to an opening having stepped sidewalls in a vertical cross-sectional profile, i.e., the sidewalls have at least two vertically extending surface segments and at least one horizontally extending surface segment connecting a respective pair of vertically extending surface segments. The stepped openings through the top shuttle plate 22T can define multiple groups of openings that are located at different levels and have partial area overlap in a plan view (e.g., a top view or a bottom view). As used herein, a “plan view” refers to a view along a vertical direction in which the profile of all elements is shown, regardless of visibility along the view direction.

[0089] In particular, each stepped opening through the top shuttle plate 22T can include a shuttle opening 27 disposed at an upper portion of the stepped opening, and a cavity 25 disposed below the shuttle opening 27 and having an area greater than that of the shuttle opening 27. The area of the cavity 25 can encompass the entire area of the shuttle opening 27 within any stepped opening. The size of the shuttle opening 27 can be selected to be larger than the size of a semiconductor package subsequently placed therein. In some embodiments, the size of each cavity 25 can be selected to match the size of the thermal interface material plate 24.

[0090] The second lower shuttle structural element (including the top shuttle plate 22T) can be configured to mate with a top surface of the first lower shuttle structural element (including the bottom shuttle plate 22B), for example by contacting a grid-shaped physically-exposed surface segment of the top surface of the first lower shuttle structural element that is not covered by the array of thermal interface material plates 24. By way of example, the top shuttle plate 22T can be attached to the bottom shuttle plate 22B by using a combination of perforations (not shown) extending through the top shuttle plate 22T and the bottom shuttle plate 22B, and fastening elements (e.g., bolts, nuts, screws, clips, etc.) through the perforations. Alternatively or additionally, an adhesive layer (not shown) can be used between the top shuttle plate 22T and the bottom shuttle plate 22B to join the top shuttle plate 22T and the bottom shuttle plate 22B. The combination of the first lower shuttle structural element (which can include the bottom shuttle plate 22B) and the second lower shuttle structural element (which can include the top shuttle plate 22T) constitutes a shuttle plate assembly 22.

[0091] When the assembly of the top shuttle plate 22T and the bottom shuttle plate 22B is complete, a lower shuttle assembly 20 is formed. The lower shuttle assembly 20 includes the first lower shuttle structural element (including the bottom shuttle plate 22B), the array of thermal interface material plates 24 positioned above the first lower shuttle structural element, the array of thermally-conductive plates 26 positioned above the array of thermal interface material plates 24, and the second lower shuttle structural element (including the top shuttle plate 22T) including the array of shuttle openings 27 therethrough. The array of shuttle openings 27 overlies the array of thermally-conductive plates 26 and is configured to receive an array of semiconductor packages therein.

[0092] In some embodiments, the bottom shuttle plate 22B has a planar top surface that is below the horizontal plane of the bottom surface that includes the array of thermally conductive plates 26. In some embodiments, the lower shuttle assembly 20 includes an array of cavities 25 that are below the array of shuttle openings 27, such that each cavity 25 selected from the array of cavities 25 is below a respective shuttle opening 27 selected from the array of shuttle openings 27 and has a greater lateral extent than the respective shuttle opening 27. In some embodiments, each shuttle opening 27 in the array of shuttle openings 27 is inside the area of the perimeter P of a respective one of the thermally conductive plates 26 in plan view.

[0093] Generally, each thermally conductive plate 26 in the array of thermally conductive plates 26 is laterally spaced apart from the combination of the first lower shuttle structural element and the second lower shuttle structural element (e.g., the combination of the bottom shuttle plate 22B and the top shuttle plate 22T) by a lateral gap (e.g., the first lateral gap LG1). According to one aspect of the present disclosure, the first lateral gap LG1 is designed to be positive at the maximum operating temperature of the lower shuttle assembly 20. In other words, the value of the first lateral gap LG1 remains positive even in embodiments where the various components of the lower shuttle assembly 20 thermally expand to their respective maximum volumes at the maximum operating temperature of the lower shuttle assembly 20, and the thermally conductive plates 26 do not come into physical contact with the combination of the bottom shuttle plate 22B and the top shuttle plate 22T.

[0094] Generally, thermal expansion of each structural element can be estimated using a linear thermal expansion model and given by the equation AL = L0 x a x AT, where AL refers to the change in lateral dimension, L0 is the lateral dimension of the structural element, a is the coefficient of thermal expansion of the structural element, and AT is the change in temperature relative to room temperature (the value of L0 is measured at room temperature). In illustrative examples, the lateral dimension of each shuttle opening 27 can be in the range of 30 mm to 100 mm, and the first lateral gap LG1 can be in the range of 25 microns to 500 microns (e.g., 50 microns to 300 microns), although smaller or larger values can be used for the first lateral gap LG1 (measured at room temperature, i.e., at 20 degrees Celsius).

[0095] The material of the second lower shuttle structural element (e.g., the top shuttle plate 22T) can be the same as or different from the material of the first lower shuttle structural element (e.g., the bottom shuttle plate 22B). For example, the top shuttle plate 22T can include a metallic material, such as W, Fe, Mo, Ti, Ta, and alloys thereof; or a metal nitride material, such as WN, TiN, TaN, MoN, and alloys thereof; or a semiconductor material, such as polysilicon or single crystal silicon. The coefficient of thermal expansion of the top shuttle plate 22T is generally less than 2.0 x 10 -5 / K. Generally, the thermal conductivity of each of the first and second lower shuttle structural elements can be less than the thermal conductivity of the array of thermally conductive plates 26.

[0096] In some embodiments, the array of shuttle openings 27 includes an array of first side walls 291 of the second lower shuttle structural elements (e.g., the top shuttle plate 22T). In some embodiments, each first side wall 291 can have a tapered upper side wall segment and a vertical lower side wall segment. The bottom periphery of the first side wall 291 of the second lower shuttle structural element can be located above a horizontal plane that includes the top surface of the array of thermally conductive plates 26. In some embodiments, each thermally conductive plate 26 in the array of thermally conductive plates 26 is vertically spaced apart from a respective overhanging portion of at least one second lower shuttle structural element (e.g., the top shuttle plate 22T) by a vertical gap VG. The vertical gap VG can be in a range of 10 microns to 300 microns (e.g., 20 microns to 200 microns), although smaller or larger values can be used for the vertical gap VG (measured at room temperature).

[0097] In some embodiments, in a plan view of the stepped openings (25, 27), the periphery of the cavity 25 can be laterally offset outward relative to the periphery of the shuttle opening 27 by a lateral offset distance that is greater than the first lateral gap LG1. Thus, in the plan view, each thermally conductive plate 26 can include a respective peripheral region that has an areal overlap with a respective overhanging portion of the second lower shuttle structural element (e.g., the top shuttle plate 22T). In some embodiments, the top shuttle plate 22T includes a plurality of stepped openings therethrough. Each stepped opening includes a respective shuttle opening 27 in the array of shuttle openings 27, and also includes a respective plate-level opening (e.g., cavity 25) in the array of plate-level openings (e.g., the array of cavities 25). The respective plate-level opening (e.g., cavity 25) has a larger area than the respective shuttle opening 27.

[0098] According to one aspect of the present application, the top surface of the second lower shuttle structural element (e.g., top shuttle plate 22T) can include an array of topographical features that can be used to cause self-alignment during mating of the lower shuttle assembly 20 with a subsequently used upper shuttle assembly. The topographical features can include an array of protrusions 40 or an array of cavities configured to receive a mating array of protrusions. In the illustrated example, the topographical features on the top surface of the top shuttle plate 22T include an array of protrusions 40. In some embodiments, the array of protrusions 40 can be arranged in a periodic array of protrusions 40 having the same periodicity as the array of shuttle openings 27. The array of topographical features can include geometric features that facilitate self-alignment between the top shuttle plate 22T and a subsequently used upper shuttle assembly. In embodiments that use an array of protrusions 40, the protrusions 40 can include conical tips that can be advantageously used to cause lateral sliding between the top shuttle plate 22T and an upper shuttle assembly during subsequent alignment processes.

[0099] With reference to FIG. 3A and FIG. 3B , an array of semiconductor packages 80 can be placed within the array of shuttle openings 27. Each semiconductor package 80 can be placed on the top surface of a respective one of the thermally conductive plates 26 within a respective shuttle opening 27 using a pick-and-placement tool. In general, the semiconductor packages 80 can include any type of semiconductor package known in the art. By way of example, the semiconductor packages 80 can include a single semiconductor die, a fan-in semiconductor die, a fan-out semiconductor die, a composite die including at least one semiconductor die and an interposer, a composite die including a vertical stack of at least two semiconductor dies, a chip-on-wafer-on-substrate package, or any other type of semiconductor package. In some embodiments, each semiconductor package 80 can include an array of solder material portions 88.

[0100] According to one aspect of the present application, a second lateral gap LG2 exists between each sidewall of the semiconductor package 80 and a respective nearest sidewall of the second lower shuttle structure element (e.g., the top shuttle plate 22T). According to one aspect of the present application, the second lateral gap LG2 is designed to be positive at the maximum operating temperature of the lower shuttle assembly 20. In other words, even in embodiments where the various components of the lower shuttle assembly 20 thermally expand to their respective maximum volumes at the maximum operating temperature of the lower shuttle assembly 20, the value of the second lateral gap LG2 remains positive and the semiconductor package 80 does not come into physical contact with the top shuttle plate 22T. In some embodiments, the second lateral gap LG2 can be in the range of 300 microns to 5 mm (e.g., 50 microns to 3 mm), although smaller or larger dimensions can also be used for the second lateral gap LG2.

[0101] With reference to FIG. 4 The upper shuttle assembly 60 can be positioned above the lower shuttle assembly 20. The upper shuttle assembly 60 includes a carrier substrate 62 and an array of package clamps (64, 66) attached to a bottom surface of the carrier substrate 62. In some embodiments, each package clamp (64, 66) can include a combination of a lower clamp portion 64 and an upper clamp portion 66. At least one fastening element 68 configured to secure a respective underlying semiconductor package 80 can be provided at a bottom of each package clamp (64, 66). In the illustrative example, the at least one fastening element 68 can include at least one vacuum suction terminal connected to a vacuum pump (not shown) through the package clamp (64, 66). By way of example, a vacuum tube (not shown) can be provided within the package clamp (64, 66) and in, on, or above the carrier substrate 62.

[0102] The array of package clamps (64, 66) can be arranged in a mirror image pattern of the pattern of shuttle openings 27. The carrier substrate 62 provides structural support for the array of package clamps (64, 66). The upper shuttle assembly 60 is configured to mate with the lower shuttle assembly 20 such that the lower shuttle assembly 20 is secured against lateral movement relative to the upper shuttle assembly 60 when the lower shuttle assembly 20 is mated with the upper shuttle assembly 60. By way of example, in embodiments where the lower shuttle assembly 20 includes an array of protrusions 40, the array of package clamps (64, 66) can include an array of cavities 69 or an array of vertical grooves configured to mate with the array of protrusions 40. The pattern of the array of cavities 69 or the array of vertical grooves can be a mirror image pattern of the pattern of the array of protrusions 40.

[0103] Generally, the array of fastening elements 68 can be configured to provide secure retention of the semiconductor packages 80. Each package clamp (64, 66) can be adjustable to accommodate different package sizes and shapes of the semiconductor packages 80. Generally, the package clamps (64, 66) can be configured to simultaneously retain multiple packages.

[0104] Referring to FIG. 5 The upper shuttle assembly 60 can be lowered onto the lower shuttle assembly 20 such that the array of protrusions 40 aligns with the array of cavities 69. The array of fastening elements 68 can contact the top surfaces of the semiconductor packages 80 and can secure the semiconductor packages 80 against lateral movement. Once positionally fixed by the array of package clamps (64, 66), the semiconductor packages 80 are securely retained against any movement or structural damage during subsequent transport and / or handling steps. The array of package clamps (64, 66) and the array of fastening elements 68 can be designed to exert just enough pressure to retain the semiconductor packages 80 without causing any damage to the semiconductor packages 80. In some embodiments, the array of fastening elements 68 can comprise an array of vacuum suction terminals to which a vacuum suction force is applied during operation.

[0105] Generally, the upper shuttle assembly 60 includes an array of fastening elements 68 that can press against the top surfaces of the array of semiconductor packages 80 when the upper shuttle assembly 60 is disposed on the lower shuttle assembly 20. In some embodiments, the array of protrusions 40 is disposed on one of the array of package clamps (64, 66) and the lower shuttle assembly 20, and the array of cavities 69 or the array of recesses is disposed on the other of the array of package clamps (64, 66) and the lower shuttle assembly 20. The array of protrusions 40 mates within the array of cavities 69 or the array of recesses when the upper shuttle assembly 60 is disposed on the lower shuttle assembly 20.

[0106] The combination of the heater element 30, the lower shuttle assembly 20, and the upper shuttle assembly 60 constitutes a package shuttle (30, 20, 60). After the semiconductor packages 80 are securely retained by the package shuttle (30, 20, 60), the semiconductor packages 80 and the package shuttle (30, 20, 60) can be transported within the semiconductor fabrication plant from one location to another. In other words, the array of semiconductor packages 80 can be transported while the array of semiconductor packages 80 is housed within the combination of the lower shuttle assembly 20 and the upper shuttle assembly 60. The package shuttle (30, 20, 60) can be transported to and from different processing stations, such as assembly stations, testing stations, and / or inspection stations.

[0107] In some embodiments, the encapsulation shuttle (30, 20, 60) includes a heater element 30 attached to a bottom surface of a first lower shuttle structural element (e.g., bottom shuttle plate 22B). In this embodiment, after the array of semiconductor packages 80 is disposed in the array of shuttle openings 27, the semiconductor packages 80 can be heated to an elevated temperature by heat generated by the heater element 30, prior to, during, and / or after transport of the semiconductor packages 80. In some embodiments, a second lower shuttle structural element (e.g., top shuttle plate 22T) includes a material having a lower thermal conductivity than the thermal conductivity of the array of thermal conductive plates 26. In this embodiment, thermal expansion of the second lower shuttle structural element can be reduced, and the reduction in size of the second lateral gap LG2 due to thermal expansion of the second lower shuttle structural element can be reduced. This feature can be advantageous in reducing the likelihood of contact between the semiconductor packages 80 and the second lower shuttle structural element during subsequent lifting of the semiconductor packages 80 out of the volume of the shuttle openings 27. In some embodiments, the semiconductor packages 80 can be at a higher temperature than the average temperature of the at least one second lower shuttle structural element (e.g., top shuttle plate 22T) while the semiconductor packages 80 are being heated.

[0108] Referring to FIG. 6 The array of semiconductor packages 80 can be lifted out of the volume of the shuttle openings 27 using the upper shuttle assembly 60. Subsequently, various processing steps can be performed on the semiconductor packages 80 while the semiconductor packages 80 are securely held in the package clamps (64, 66) by the array of fastening elements 68. Exemplary processing steps include, but are not limited to, soldering steps, wire bonding steps, sealing steps, and electrical testing steps. In addition, various quality control measures can be implemented to ensure that the semiconductor packages 80 meet desired specifications. Such quality control measures can include visual inspection, functional testing, and other forms of testing. Once the semiconductor packages 80 have undergone all necessary processing and quality control steps, the semiconductor packages 80 can be released from the package clamps (64, 66) for further processing or packaging.

[0109] Referring to FIG. 7A and FIG. 7BThe second embodiment structure can be derived from the first embodiment structure by modifying the bottom shuttle plate 22B. Specifically, the height of the bottom shuttle plate 22B in the second embodiment structure is equal to the vertical distance between the heater element 30 and the bottom perimeter of the shuttle openings 27 described with reference to the first embodiment structure. According to an aspect of the present disclosure, the bottom shuttle plate 22B includes an array of recess cavities 25’ therein. In some embodiments, the array of recess cavities 25’ in the bottom shuttle plate 22B can have the same shape and dimensions as the array of cavities 25 described with reference to the first embodiment structure. The depth of each recess cavity 25’ can be greater than the sum of the thickness of the thermal interface material plate 24 and the thickness of the thermally conductive plate 26. In some embodiments, the dimensions of each recess cavity 25’ in plan view can be the same as the dimensions of the corresponding thermal interface material plate 24. In this embodiment, the overall bottom surface of the array of recess cavities 25’ in the bottom shuttle plate 22B can be covered by the array of thermal interface material plates 24 when the array of thermal interface material plates 24 is formed. The array of thermally conductive plates 26 can be formed on the top surface of the array of thermal interface material plates 24.

[0110] The top surface of the array of thermally conductive plates 26 can be vertically recessed by a vertical gap VG relative to the topmost surface of the bottom shuttle plate 22B. The vertical gap VG can be in the range of 10 microns to 300 microns (e.g., 20 microns to 200 microns), although smaller or larger values can be used for the vertical gap VG (measured at room temperature). Each thermally conductive plate 26 in the array of thermally conductive plates 26 is laterally spaced apart from the first lower shuttle structure element (e.g., the bottom shuttle plate 22B) by a lateral gap (e.g., the first lateral gap LG1). According to an aspect of the present disclosure, the first lateral gap LG1 is designed to be positive at the maximum operating temperature of the lower shuttle assembly. In other words, the value of the first lateral gap LG1 remains positive and the thermally conductive plate 26 does not come into physical contact with the bottom shuttle plate 22B, even in embodiments where the various components of the lower shuttle assembly thermally expand to their respective maximum volumes at the maximum operating temperature of the lower shuttle assembly.

[0111] Referring to FIG. 8A and FIG. 8B The second lower shuttle structure element of the second embodiment structure is derived from the second lower shuttle structure element of the first embodiment structure by removing the portion of the second lower shuttle structure element of the first embodiment structure that is below the bottom perimeter including the array of shuttle openings 27. In some embodiments, the second lower shuttle structure element of the second embodiment structure includes a perforated plate (e.g., the top shuttle plate 22T) that includes an array of shuttle openings 27 therethrough. Each shuttle opening 27 in the array of shuttle openings 27 overlies a respective recess cavity 25’ in the array of recess cavities 25’ and has a smaller area than the respective recess cavity 25’.

[0112] The second lower shuttle structural element (including the top shuttle plate 22T) can be configured to mate with the top surface of the first lower shuttle structural element by contacting grid-like physically exposed surface segments of the top surface of the first lower shuttle structural element (including the bottom shuttle plate 22B) that are not covered by the array of thermal interface material plates 24. By way of example, the top shuttle plate 22T can be attached to the bottom shuttle plate 22B by using a combination of perforations (not shown) that extend through the top shuttle plate 22T and the bottom shuttle plate 22B and fastening elements (e.g., bolts, nuts, screws, clips, etc.) that pass through the perforations. Alternatively or additionally, an adhesive layer (not shown) can be used between the top shuttle plate 22T and the bottom shuttle plate 22B to join the top shuttle plate 22T and the bottom shuttle plate 22B. The combination of the first lower shuttle structural element (which can include the bottom shuttle plate 22B) and the second lower shuttle structural element (which can include the top shuttle plate 22T) constitutes the shuttle plate assembly 22.

[0113] When the assembly of the top shuttle plate 22T and the bottom shuttle plate 22B is complete, the lower shuttle assembly 20 is formed. The lower shuttle assembly 20 includes the first lower shuttle structural element (including the bottom shuttle plate 22B), the array of thermal interface material plates 24 positioned above the first lower shuttle structural element, the array of thermally conductive plates 26 positioned above the array of thermal interface material plates 24, and the second lower shuttle structural element (including the top shuttle plate 22T) that includes the array of shuttle openings 27 therethrough. The array of shuttle openings 27 is overlaid above the array of thermally conductive plates 26 and is configured to accommodate the array of semiconductor packages therein.

[0114] In some embodiments, the bottom shuttle plate 22B has a perforated top surface that is positioned above the level of the top surfaces of the array of thermally conductive plates 26. In some embodiments, the lower shuttle assembly 20 includes an array of recessed cavities 25’ positioned below the array of shuttle openings 27 such that each recessed cavity 25’ selected from the array of recessed cavities 25’ is positioned below and has a larger lateral extent than a corresponding shuttle opening 27 selected from the array of shuttle openings 27. In some embodiments, each shuttle opening 27 in the array of shuttle openings 27 is positioned inside the area of the perimeter P of a corresponding one of the thermally conductive plates 26 in plan view.

[0115] Generally, each of the array of thermally conductive plates 26 is laterally spaced apart from the combination of the first and second lower shuttle structural elements (e.g., the combination of the bottom shuttle plate 22B and the top shuttle plate 22T) by a lateral gap (e.g., the first lateral gap LG1). According to one aspect of the present disclosure, the first lateral gap LG1 is designed to be positive at the maximum operating temperature of the lower shuttle assembly 20. In other words, the value of the first lateral gap LG1 remains positive and the thermally conductive plates 26 do not come into physical contact with the combination of the bottom shuttle plate 22B and the top shuttle plate 22T, even in embodiments where the various components of the lower shuttle assembly 20 thermally expand to their respective maximum volumes at the maximum operating temperature of the lower shuttle assembly 20.

[0116] In some embodiments, the array of shuttle openings 27 includes an array of first side walls 291 of the second lower shuttle structural element (e.g., the top shuttle plate 22T). In some embodiments, each of the first side walls 291 can have a tapered upper side wall segment and a vertical lower side wall segment. The bottom periphery of the first side walls 291 of the second lower shuttle structural element can be located above a horizontal plane that includes the top surface of the array of thermally conductive plates 26. In some embodiments, each of the array of thermally conductive plates 26 is vertically spaced apart from a respective overhanging portion of at least one second lower shuttle structural element (e.g., the top shuttle plate 22T) by a vertical gap VG. The vertical gap VG can be in the range of 10 microns to 300 microns (e.g., 20 microns to 200 microns), although smaller or larger values can be used for the vertical gap VG (measured at room temperature).

[0117] In some embodiments, the periphery of the recessed cavity 25’ in each unit area UA can be laterally offset outward relative to the periphery of the shuttle opening 27 above by a lateral offset distance that is greater than the first lateral gap LG1. Thus, in plan view, each of the thermally conductive plates 26 can include a respective peripheral region that has an areal overlap with a respective overhanging portion of the second lower shuttle structural element (e.g., the top shuttle plate 22T). In some embodiments, the top shuttle plate 22T includes a plurality of stepped openings therethrough.

[0118] According to one aspect of the present utility model, the top surface of the second lower shuttle structural element (e.g., top shuttle plate 22T) can include an array of topographical features that can be used to cause self-alignment during mating of the lower shuttle assembly 20 with a subsequently used upper shuttle assembly. The topographical features can include an array of protrusions 40 or an array of cavities configured to receive an array of mating protrusions. In the illustrated example, the topographical features on the top surface of the top shuttle plate 22T include an array of protrusions 40. In some embodiments, the array of protrusions 40 can be arranged in a periodic array of protrusions 40 having the same periodicity as the array of shuttle openings 27. The array of topographical features can include geometric features that facilitate self-alignment between the top shuttle plate 22T and a subsequently used upper shuttle assembly. If an array of protrusions 40 is used, the protrusions 40 can include conical tips that can be advantageously used to cause lateral sliding between the top shuttle plate 22T and the upper shuttle assembly during subsequent alignment processes.

[0119] Referring to FIG. 9A and FIG. 9B , the array of semiconductor packages 80 can be disposed within the array of shuttle openings 27 by performing the processing steps described with reference to FIG. 3A and FIG. 3B .

[0120] Referring to FIG. 10 , the upper shuttle assembly 60 can be positioned over the lower shuttle assembly 20 as described with reference to FIG. 4 .

[0121] Referring to FIG. 11 , the upper shuttle assembly 60 can be disposed on the lower shuttle assembly 20 as described with reference to FIG. 5 . The array of semiconductor packages 80 can be positionally fixed relative to the package shuttle (30, 20, 60) and can be transported by selectively heating the semiconductor packages 80.

[0122] Referring to FIG. 6 , various processing steps described with reference to FIG. 13A may be performed. The semiconductor packages 80 can be lifted out of the shuttle openings 27.

[0123] Referring to FIG. 13B and FIG. 14A , a third embodiment structure can be derived from the second embodiment structure by modifying the bottom shuttle plate 22B to be a shuttle frame 22F having a greater height. In some embodiments, the height of the shuttle frame 22F in the third embodiment structure can be equal to the vertical distance between the heater element 30 and a horizontal plane including the top surface of the second upper shuttle structural element (e.g., top shuttle plate 22T) in the second embodiment structure.

[0124] In the third embodiment structure, the first lower shuttle structure element includes a frame (e.g., shuttle frame 22F) that includes a two-dimensional array of stepped recessed cavities 29 therein. Each stepped recessed cavity 29 in the array of stepped recessed cavities 29 has a larger lateral dimension at an upper portion than at a lower portion. Each stepped recessed cavity 29 includes a first sidewall 291 at the upper portion, a second sidewall 292 at the lower portion, and a horizontal surface 293 connecting a bottom perimeter of the first sidewall 291 with a top perimeter of the second sidewall 292. Each volume laterally enclosed by a set of second sidewalls 292 can be the same as the volume of the cavity 25 described with reference to the first embodiment structure and / or the volume of the recessed cavity 25’ described with reference to the second embodiment structure.

[0125] The array of thermal interface material plates 24 and the array of thermally conductive plates 26 can be formed at the lower portion of the array of stepped recessed cavities 29. The top surfaces of the array of thermally conductive plates 26 can be vertically recessed by a vertical gap VG relative to a horizontal plane that includes the horizontal surfaces 293 of the array of stepped recessed cavities 29. The vertical gap VG can be in a range of 10 microns to 300 microns (e.g., 20 microns to 200 microns), although smaller or larger values can be used for the vertical gap VG (measured at room temperature). Each thermally conductive plate 26 in the array of thermally conductive plates 26 is laterally spaced apart from the nearest one of the second sidewalls 292 of the stepped recessed cavities 29 by a lateral gap (e.g., a first lateral gap LG1). According to one aspect of the present disclosure, the first lateral gap LG1 is designed to be positive at the highest operating temperature of the lower shuttle assembly. In other words, the value of the first lateral gap LG1 remains positive and the thermally conductive plates 26 do not make physical contact with the shuttle frame 22F, even in embodiments where the various components of the lower shuttle assembly thermally expand to their respective maximum volumes at the highest operating temperature of the lower shuttle assembly.

[0126] In some embodiments, each horizontal surface 293 of the stepped recessed cavities 29 can have a frame shape, such as a rectangular frame shape. In some embodiments, the width of each segment of the rectangular frame shape of the horizontal surface 293 of the stepped recessed cavities 29 can be in a range of 1 mm to 30 mm (e.g., 2 mm to 15 mm), although smaller or larger widths can be used. The height of each first sidewall 291 can be greater than the height of a subsequently used semiconductor package and can be in a range of 1 mm to 5 mm, although smaller or larger heights can be used.

[0127] Reference is made to FIG. 14B and FIG. 15AIn some embodiments, a plurality of second lower shuttle structure elements can be attached to the first lower shuttle structure element (which includes shuttle shelves 22F). In some embodiments, a plurality of perforated inserts 22I can serve as the plurality of second lower shuttle structure elements. In some embodiments, the plurality of perforated inserts 22I can be inserted into the upper portions of the stepped recessed cavities 29 by sliding downward into respective final positions. Each perforated insert 22I can be configured to fit into the upper portion of a respective one of the stepped recessed cavities 29 and include openings (which are shuttle openings 27) therethrough. A two-dimensional array of perforated inserts 22I can be inserted into a two-dimensional array of stepped recessed cavities 29, and a two-dimensional array of shuttle openings 27 can be disposed within a two-dimensional array of perforated inserts 22I.

[0128] In a third embodiment structure, an array of perforated inserts 22I can be disposed within the upper portions of the array of stepped recessed cavities 29 after forming the array of thermal interface material plates 24 and the array of thermally conductive plates 26. Each perforated insert 22I of the array of perforated inserts 22I includes a respective one of the array of shuttle openings 27. The first lower shuttle structure element (including shuttle shelves 22F) and the second lower shuttle structure element (including the array of perforated inserts 22I) constitute a shuttle plate assembly 22.

[0129] In general, the shuttle plate assembly 22 of various embodiments can have the same overall volume and the same overall shape. However, the distribution of volume between the first lower shuttle structure element and the at least one second lower shuttle structure element can be different in various embodiment structures of the present application.

[0130] In a third embodiment structure, the shuttle plate assembly 22 includes an array of topographical features that can be used to cause self-alignment during mating of the lower shuttle assembly 20 with a subsequently used upper shuttle assembly. The topographical features can include an array of protrusions 40 or an array of cavities configured to receive an array of mating protrusions 40. In the illustrated example, the topographical features on the top surface of the perforated inserts 22I include an array of protrusions 40. While the present application is described using embodiments in which an array of protrusions 40 is disposed on the array of perforated inserts 22I, embodiments in which an array of topographical features is disposed on the top surface of the shuttle shelves 22F are expressly contemplated herein. In some embodiments, the array of protrusions 40 can be arranged in a periodic array of protrusions 40 having the same periodicity as the array of shuttle openings 27. The array of topographical features can include geometric features that facilitate self-alignment between the lower shuttle assembly 20 and a subsequently used upper shuttle assembly. In embodiments in which an array of protrusions 40 is used, the protrusions 40 can include conical tips that can be advantageously used to cause lateral sliding between the lower shuttle assembly 20 and the upper shuttle assembly during subsequent alignment processes.

[0131] Referring to FIG. 15B andFIG. 3A The semiconductor package 80 array can be disposed within the shuttle opening 27 array by performing the processing steps described with reference to FIG. 3B and FIG. 16 .

[0132] With reference to FIG. 4 , the upper shuttle assembly 60 can be positioned above the lower shuttle assembly 20 as described with reference to FIG. 17 .

[0133] With reference to FIG. 5 , the upper shuttle assembly 60 can be disposed on the lower shuttle assembly 20 as described with reference to FIG. 6 . The semiconductor package 80 array can be positionally fixed relative to the package shuttle (30, 20, 60) and can be transported by selectively heating the semiconductor package 80.

[0134] With reference to FIG. 19 , various processing steps described with reference to FIG. 1A to FIG. 2B may be performed. The semiconductor package 80 can be lifted out of the shuttle opening 27.

[0135] FIG. 7A to FIG. 8B is a flowchart illustrating general processing steps for a manufacturing device structure in accordance with various embodiments of the present disclosure.

[0136] With reference to step 1910 and FIG. 13A to FIG. 14B , FIG. 3A and FIG. 3B , the lower shuttle assembly 20 is provided. The lower shuttle assembly 20 includes a first lower shuttle structure element (22B, 22F), an array of thermally conductive plates 26 positioned above the first lower shuttle structure element (22B, 22F), and at least one second lower shuttle structure element (22T, 22I) including an array of shuttle openings 27 therethrough.

[0137] With reference to step 1920 and FIG. 9A , FIG. 9B , FIG. 15A , FIG. 15B , FIG. 4 and FIG. 10 , the semiconductor package 80 array can be disposed on the array of thermally conductive plates 26 in the array of shuttle openings 27.

[0138] With reference to step 1930 and FIG. 16 , FIG. 5 and FIG. 6 , the upper shuttle assembly 60 can be selectively disposed on the lower shuttle assembly 20. The upper shuttle assembly 60 includes a carrier substrate 62 and an array of package clamps (64, 66) attached to a bottom surface of the carrier substrate 62.

[0139] With reference to step 1940 andFIG. 11 、 FIG. 12 、 FIG. 17 、 FIG. 18 、 FIG. 1A to FIG. 6 and FIG. 7A to FIG. 12 The array of semiconductor packages 80 can be transported when housed within the combination of the lower shuttle assembly 20 and the upper shuttle assembly 60.

[0140] With reference to all of the drawings and in accordance with various embodiments of the present invention, a packaging shuttle (30, 20, 60) is provided. The packaging shuttle (30, 20, 60) includes a lower shuttle assembly 20 including a first lower shuttle structural element (22B, 22F), an array of thermally conductive plates 26 overlying the first lower shuttle structural element (22B, 22F), and at least one second lower shuttle structural element (22T, 22I) including an array of shuttle openings 27 therethrough, wherein the array of shuttle openings 27 overlies the array of thermally conductive plates 26 and is configured to house an array of semiconductor packages 80 therein.

[0141] In some embodiments, each shuttle opening 27 of the array of shuttle openings 27 lies within an area of a perimeter P of a respective one of the thermally conductive plates 26 in plan view. In some embodiments, the lower shuttle assembly 20 includes an array of cavities 25 underlying the array of shuttle openings 27, such that each cavity 25 selected from the array of cavities 25 underlies a respective one of the shuttle openings 27 selected from the array of shuttle openings 27 and has a greater lateral extent than the respective shuttle opening 27. In some embodiments, the array of shuttle openings 27 includes a first array of side walls 291 of the at least one second lower shuttle structural element (22T, 22I); and a bottom perimeter of the first array of side walls 291 of the at least one second lower shuttle structural element (22T, 22I) lies above a horizontal plane including a top surface of the array of thermally conductive plates 26.

[0142] In some embodiments, the packaging shuttle (30, 20, 60) further includes an array of thermal interface material plates 24 in contact with the first lower shuttle structural element (22B, 22F), wherein each thermal interface material plate 24 of the array of thermal interface material plates 24 is in contact with a bottom surface of a respective one of the array of thermally conductive plates 26.

[0143] In some embodiments, each thermally conductive plate 26 of the array of thermally conductive plates 26 is laterally spaced apart from the combination of the first lower shuttle structural element and the at least one second lower shuttle structural element by a lateral gap (e.g., a first lateral gap LG1). In some embodiments, each thermally conductive plate 26 of the array of thermally conductive plates 26 is vertically spaced apart from a respective overhanging portion of the at least one second lower shuttle structural element (22T, 22I) by a vertical gap VG.

[0144] In some embodiments, the first lower shuttle structural element comprises a non- perforated plate (e.g., bottom shuttle plate 22B) having a flat top surface located below the horizontal plane of the bottom surface comprising the array of thermally conductive plates 26; and at least a second lower shuttle structural element comprises a perforated plate (e.g., top shuttle plate 22T) comprising an array of stepped openings therethrough, wherein each stepped opening comprises a respective one of the array of shuttle openings 27, and further comprises a respective one of the array of plate-level openings (e.g., cavities 25) having a larger area than the respective shuttle opening 27, e.g., as shown in FIGS. 13A-18. ​

[0145] In some embodiments, the first lower shuttle structural element comprises a non- perforated plate (e.g., bottom shuttle plate 22B) comprising an array of recessed cavities 25’, wherein the array of thermally conductive plates 26 is located within the array of recessed cavities 25’; and at least a second lower shuttle structural element comprises a perforated plate (e.g., top shuttle plate 22T) comprising an array of shuttle openings 27 therethrough, wherein each shuttle opening 27 of the array of shuttle openings 27 overlies a respective one of the array of recessed cavities 25’ and has a smaller area than the respective recessed cavity 25’, e.g., as shown in FIGS. 13A-18. ​

[0146] In some embodiments, the first lower shuttle structural element comprises a frame (e.g., shuttle frame 22F) comprising a two-dimensional array of stepped recessed cavities 29, wherein each stepped recessed cavity 29 of the array of stepped recessed cavities 29 has a larger lateral dimension at an upper portion than at a lower portion; and at least a second lower shuttle structural element comprises an array of perforated inserts 22I located within the upper portion of the array of stepped recessed cavities 29, wherein each perforated insert 22I of the array of perforated inserts 22I comprises a respective one of the array of shuttle openings 27, e.g., as shown in FIGS. 13A-18.

[0147] In some embodiments, the package shuttle can further comprise an upper shuttle assembly, wherein the upper shuttle assembly comprises: a carrier substrate; and an array of package clamps attached to a bottom surface of the carrier substrate, wherein the array of package clamps is configured to cooperate with the lower shuttle assembly such that the lower shuttle assembly is immobilized to prevent lateral movement relative to the upper shuttle assembly when the lower shuttle assembly cooperates with the upper shuttle assembly.

[0148] ​​According to one aspect of the present application, a structure including a packaging shuttle (30, 20, 60) is provided. The packaging shuttle (30, 20, 60) includes a lower shuttle assembly 20 including a first lower shuttle structural element (22B, 22F), an array of thermal interface material plates 24, an array of thermally conductive plates 26, and at least one second lower shuttle structural element (22T, 22I). The array of thermal interface material plates 24 is positioned on the first lower shuttle structural element (22B, 22F). The array of thermally conductive plates 26 is positioned on the array of thermal interface material plates 24. The at least one second lower shuttle structural element (22T, 22I) includes an array of shuttle openings 27 therethrough, wherein the array of shuttle openings 27 overlies the array of thermally conductive plates 26 and is configured to receive an array of semiconductor packages 80 therein.

[0149] In some embodiments, the first lower shuttle structural element (22B, 22F) and the at least one second lower shuttle structural element (22T, 22I) each have a thermal conductivity less than a thermal conductivity of the array of thermally conductive plates 26. In some embodiments, the packaging shuttle (30, 20, 60) includes a heater element 30 attached to a bottom surface of the first lower shuttle structural element (22B, 22F).

[0150] In some embodiments, the array of thermally conductive plates 26 includes a metallic material having a thermal conductivity at least 10 times greater than a thermal conductivity of a material of the array of thermal interface material plates 24. In some embodiments, the structure further includes an array of semiconductor packages 80 positioned within the array of shuttle openings 27, wherein each semiconductor package 80 of the array of semiconductor packages 80 includes a respective array of solder material portions 88 contacting a top surface of a respective one of the array of thermally conductive plates 26.

[0151] According to one aspect of the present application, a method of transporting semiconductor packages is provided. The method includes providing a lower shuttle assembly, wherein the lower shuttle assembly includes a first lower shuttle structural element, an array of thermally conductive plates positioned on the first lower shuttle structural element, and at least one second lower shuttle structural element including an array of shuttle openings therethrough. The method includes positioning an array of semiconductor packages on the array of thermally conductive plates in the array of shuttle openings. The method includes transporting the array of semiconductor packages while the array of semiconductor packages is contained within the lower shuttle assembly.

[0152] In some embodiments, an array of protrusions is disposed on one of the array of package clamps of the upper shuttle assembly and the lower shuttle assembly; an array of cavities or an array of grooves is disposed on the other of the array of package clamps and the lower shuttle assembly; and the array of protrusions is fitted within the array of cavities or the array of grooves when the upper shuttle assembly is disposed on the lower shuttle assembly. In some embodiments, the method further includes disposing the upper shuttle assembly on the lower shuttle assembly, wherein the upper shuttle assembly includes a carrier substrate, an array of package clamps attached to a bottom surface of the carrier substrate, and an array of fastening elements that press against a bottom surface of the array of semiconductor packages when the upper shuttle assembly is disposed on the lower shuttle assembly; and transporting the array of semiconductor packages when the upper shuttle assembly is disposed on the lower shuttle assembly. In some embodiments, a heater element is located on a bottom surface of the first lower shuttle structure element; and the method includes heating the array of semiconductor packages by heat generated by the heater element after the array of semiconductor packages is disposed in the array of shuttle openings. In some embodiments, at least a second lower shuttle structure element includes a material having a lower thermal conductivity than the array of thermally conductive plates; and the array of semiconductor packages is at a higher temperature than an average temperature of the at least a second lower shuttle structure element when the array of semiconductor packages is heated.

[0153] Generally, thermal expansion of various components of the package shuttle can cause various detrimental effects that can cause damage or degradation of the semiconductor packages 80 in transport. For example, in processing steps where the lower shuttle assembly and the upper shuttle assembly need to be separated from each other, the topographical protrusions 40 (e.g., guide pins) and the topographical recesses between the lower shuttle assembly and the upper shuttle assembly can become lodged against each other. This mechanical failure can cause abnormal wear and tear on the topographical protrusions and the topographical recesses, and can compromise the integrity of the vacuum suction on the semiconductor packages 80, and can cause a portion of the semiconductor packages 80 to fall during or after the semiconductor packages 80 are transported in the package shuttle. Various embodiments of the present invention reduce the transfer of heat from the heater element 30 to at least one second lower shuttle structure element (e.g., the top shuttle plate 22T or the plurality of perforated inserts 22I) and / or to the upper shuttle assembly, while effectively transferring heat from the heater element 30 to the semiconductor packages 80.

[0154] The features of many embodiments are summarized above to enable those skilled in the art of the present application to better understand the various embodiments of the present application. Unless otherwise explicitly disclosed herein, each embodiment described using the term "comprising" is inherently disclosed as also comprising, in some embodiments, the term "consisting essentially of" or the term "consisting of" in place of the term "comprising." When two or more elements are listed in the same paragraph or different paragraphs as alternatives, Markush combinations including the list of two or more elements are also implicitly disclosed in some embodiments. Whenever a helper verb "may" is used in the present application to describe the formation of an element or the performance of a process step, embodiments in which such element is not formed or such process step is not performed are also explicitly contemplated, as long as the resulting device or apparatus can provide equivalent results. Therefore, whenever the helper verb "may" is used to describe the formation of an element or the performance of a process step, the same should also be interpreted as "may" or "may or can not" whenever the formation of such element or the performance of such process step is omitted and the same results or equivalent results (including slightly superior results and slightly inferior results) can be provided. Those skilled in the art of the present application should understand that other processes and structures can be easily designed or changed based on the embodiments of the present application to achieve the same purpose and / or achieve the same advantages as the embodiments introduced herein. Those skilled in the art of the present application should also understand that these equivalent structures do not deviate from the spirit and scope of the present application. Various changes, substitutions and variations can be made to the embodiments of the present application without departing from the spirit and scope of the appended claims.

Claims

1. A packaging shuttle comprising a lower shuttle assembly, characterised in that, The lower shuttle assembly includes: a first lower shuttle structural element; an array of thermally conductive plates over the first lower shuttle structural element; and at least a second lower shuttle structural element including an array of shuttle openings therethrough, wherein the array of shuttle openings overlies the array of thermally conductive plates and is configured to accommodate an array of semiconductor packages therein.

2. The package shuttle of claim 1, wherein, Each shuttle opening in the array of shuttle openings is interior to a region of a perimeter of a corresponding thermally conductive plate in the array of thermally conductive plates in a plan view.

3. The package shuttle of claim 1, wherein, The lower shuttle assembly includes an array of cavities under the array of shuttle openings, such that each cavity selected from the array of cavities is under a corresponding shuttle opening selected from the array of shuttle openings and has a larger lateral extent than the corresponding shuttle opening, wherein: the array of shuttle openings includes a first sidewall array of the at least a second lower shuttle structural element; and a bottom perimeter of the first sidewall array of the at least a second lower shuttle structural element is above a horizontal plane including a top surface of the array of thermally conductive plates.

4. The package shuttle of claim 1, wherein, Each thermally conductive plate in the array of thermally conductive plates is laterally spaced apart from a combination of the first lower shuttle structural element and the at least a second lower shuttle structural element by a lateral gap, and wherein each thermally conductive plate in the array of thermally conductive plates is vertically spaced apart from a corresponding overhanging portion of the at least a second lower shuttle structural element by a vertical gap.

5. The package shuttle of claim 1, wherein: the first lower shuttle structural element includes a non-porous plate having a planar top surface below a horizontal plane including a bottom surface of the array of thermally conductive plates; and the at least a second lower shuttle structural element includes a perforated plate including a plurality of stepped openings therethrough, wherein each of the plurality of stepped openings includes a corresponding shuttle opening in the array of shuttle openings and further includes a corresponding panel-level opening in an array of panel-level openings having a larger area than the corresponding shuttle opening.

6. The package shuttle of claim 1, wherein: the first lower shuttle structural element includes a non-porous plate including a recessed array of cavities, wherein the array of thermally conductive plates is within the recessed array of cavities; and the at least a second lower shuttle structural element includes a perforated plate including the array of shuttle openings therethrough, wherein each shuttle opening in the array of shuttle openings overlies a corresponding recessed cavity in the recessed array of cavities and has a smaller area than the corresponding recessed cavity.

7. The package shuttle of claim 1, wherein: the first lower shuttle structural element includes a frame including a two- dimensional array of stepped recessed cavities therein, wherein each stepped recessed cavity in the two-dimensional array of stepped recessed cavities has a larger lateral dimension at an upper portion than at a lower portion; and the at least a second lower shuttle structural element includes an array of perforated inserts within a plurality of the upper portions of the two-dimensional array of stepped recessed cavities, wherein each perforated insert in the array of perforated inserts includes a corresponding shuttle opening in the array of shuttle openings. ​ 8. The capsule shuttle of claim 1, wherein, Also included is an upper shuttle assembly, wherein the upper shuttle assembly includes: a carrier substrate; and a package clamp array attached to a bottom surface of the carrier substrate, wherein the package clamp array is configured to cooperate with the lower shuttle assembly such that when the lower shuttle assembly cooperates with the upper shuttle assembly, the lower shuttle assembly is immobilized to prevent lateral movement relative to the upper shuttle assembly.

9. A structure comprising a package shuttle, wherein, The package shuttle includes a lower shuttle assembly, the lower shuttle assembly including: a first lower shuttle structural element; a thermal interface material plate array positioned on the first lower shuttle structural element; a thermally conductive plate array positioned on the thermal interface material plate array; and at least a second lower shuttle structural element including a shuttle opening array therethrough, wherein the shuttle opening array overlies the thermally conductive plate array and is configured to accommodate a semiconductor package array therein.

10. The structure of claim 9, wherein The first lower shuttle structural element and the at least a second lower shuttle structural element each have a thermal conductivity less than a thermal conductivity of the thermally conductive plate array, and wherein the package shuttle includes a heater element attached to a bottom surface of the first lower shuttle structural element. The package shuttle includes a lower shuttle assembly, the lower shuttle assembly including: a first lower shuttle structural element; a thermal interface material plate array positioned on the first lower shuttle structural element; a thermally conductive plate array positioned on the thermal interface material plate array; and at least a second lower shuttle structural element including a shuttle opening array therethrough, wherein the shuttle opening array overlies the thermally conductive plate array and is configured to accommodate a semiconductor package array therein. The first lower shuttle structural element and the at least a second lower shuttle structural element each have a thermal conductivity less than a thermal conductivity of the thermally conductive plate array, and wherein the package shuttle includes a heater element attached to a bottom surface of the first lower shuttle structural element.

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