Heater and semiconductor device processing equipment
By employing a multi-point temperature detection system in semiconductor process equipment, the problem of insufficient temperature distribution detection in dual-drive heating plates was solved, enabling precise temperature control of each area of the heating plate and improving the fabrication efficiency of semiconductor processes.
Patent Information
- Application Number
- CN202422271348.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-14
- Publication Date
- 2025-11-07
- Estimated Expiration
- 2034-09-14
AI Technical Summary
Existing semiconductor process equipment cannot effectively detect the temperature distribution in different areas of the dual-drive heating plate, which requires the collection of process data when replacing the heating plate, increasing time, manpower and material costs.
A multi-point temperature detection system is adopted, including thermocouples in the center, periphery, and outer ring area, which detect and heat the temperature of each area respectively, and achieve precise control of temperature distribution through heating unit.
It improves the efficiency of semiconductor manufacturing processes, reduces time and resource waste, and enables precise acquisition and control of temperature distribution in different areas of the heating plate.
Smart Images
Figure CN223528225U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of semiconductor processing, especially to a kind of heater, and a kind of processing equipment of semiconductor device. BACKGROUND
[0002] Semiconductor process is usually very sensitive to the temperature uniformity or distribution of heating disc, and the ideal temperature detection can be achieved by measuring the temperature of heating disc with thermocouple under certain conditions (such as temperature set point, chamber pressure, gas flow rate, etc.). The control of the heating wire inside the double-drive heating disc adopts double-drive mode, that is, the current of the inner and outer ring heating wires can be controlled separately, and the temperature difference between the inner and outer rings can be controlled.
[0003] In the prior art, the semiconductor process equipment can only test the center temperature by thermocouple single point, therefore, the single area temperature detection of double-drive disc does not have enough detection capability to accurately detect the temperature distribution during use. In addition, during the use of double-drive disc, since the actual temperature of the outer ring heating disc is unknown, when replacing a new heating disc, the optimal current ratio value of the process data used by the actual heating disc is usually confirmed after collecting process data of different current ratios, which increases the time cost and wastes manpower and resources.
[0004] In order to overcome the above-mentioned defects existing in the prior art, the technical field urgently needs a kind of heater technology for detecting the temperature of each corresponding area of the disc body respectively, so as to effectively obtain and control the temperature distribution of each area of the heating disc, and improve the preparation efficiency of semiconductor process. SUMMARY
[0005] The following gives a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects, and neither is it intended to identify key or critical elements of all aspects nor to delineate the scope of any or all aspects. Its only purpose is to present some concepts of one or more aspects in a simplified form, before the more detailed description is given later.
[0006] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a kind of heater, a kind of processing equipment of semiconductor device, for detecting the temperature of each corresponding area of the disc body respectively, so as to effectively obtain and control the temperature distribution of each area of the heating disc, and improve the preparation efficiency of semiconductor process.
[0007] Specifically, the heater according to the first aspect of the present application comprises: a disc body, a first electric thermocouple arranged in a first area at the center of the disc body and a second electric thermocouple arranged in a second area at the periphery of the first area, the first electric thermocouple and the second electric thermocouple are respectively used for detecting the temperature of each corresponding area of the disc body; and a heating unit for heating the first area and the second area respectively.
[0008] Further, in some embodiments of the present application, the disc body further comprises a third electric thermocouple arranged in a third area at the periphery of the second area, and the heating unit is further used for heating the third area.
[0009] Further, in some embodiments of the present application, the heating unit is arranged in a support structure at the lower part of the center of the disc body, wherein the second electric thermocouple comprises at least one first radial block, the second electric thermocouple is connected to the heating unit via the first radial block, the third electric thermocouple comprises at least one second radial block, and the third electric thermocouple is connected to the heating unit via the second radial block.
[0010] Further, in some embodiments of the present application, the heating unit comprises a first heating element, a second heating element, and a third heating element, wherein the first heating element is located in the first area, the second heating element is located in the second area, and the third heating element is located in the third area.
[0011] Further, in some embodiments of the present application, the first area is a circular area with the center point of the disc body as the center, the second area is an annular area surrounding the first area, and the third area is an annular area surrounding the second area.
[0012] Further, in some embodiments of the present application, the radius of the disc body is 15 cm, the radius range of the first electric thermocouple is 2 cm to 3 cm, the width range of the second electric thermocouple is 4 cm to 6 cm, the width range of the third electric thermocouple is 2.5 cm to 3 cm, and the first distance between the first electric thermocouple and the second electric thermocouple is equal to the second distance between the second electric thermocouple and the third electric thermocouple.
[0013] Further, in some embodiments of the present application, the first area is a square area with the center point of the disc body as the origin, the second area is a wave-shaped area surrounding the first area, and the third area is a wave-shaped area surrounding the second area.
[0014] Further, in some embodiments of the present application, the radius of the disc is 15 cm, the side length of the first electric thermocouple is 4 cm, the width range of the second electric thermocouple is 4 cm-5 cm, the width range of the third electric thermocouple is 2.5 cm-3 cm, and the first distance between the first electric thermocouple and the second electric thermocouple is equal to the second distance between the second electric thermocouple and the third electric thermocouple.
[0015] Further, in some embodiments of the present application, a metal layer is provided outside the first electric thermocouple, the second electric thermocouple and the third electric thermocouple, for shielding the signal interference received by the first electric thermocouple, the second electric thermocouple and the third electric thermocouple in temperature detection.
[0016] In addition, the processing equipment of the semiconductor device according to the second aspect of the present application comprises: a process chamber for performing a thin film deposition process on a device therein; and the heater according to any one of the first aspect of the present application. BRIEF DESCRIPTION OF DRAWINGS
[0017] The above features and advantages of the present application can be better understood by reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which the components are not necessarily drawn to scale and components of similar or identical function or structure can have the same or similar reference numbers. The detailed description of the embodiments of the present application is provided with reference to the accompanying drawings.
[0018] Figure 1 A structural schematic diagram of a heater according to some embodiments of the present application is shown.
[0019] Figure 2 A structural schematic diagram of a disc and an electric thermocouple according to some embodiments of the present application is shown.
[0020] Figure 3 An electric thermocouple structural schematic diagram according to some embodiments of the present application is shown.
[0021] Figure 4 A cross-sectional structural schematic diagram of an electric thermocouple according to some embodiments of the present application is shown.
[0022] LIST OF REFERENCE NUMBERS:
[0023] 10 disc
[0024] 21-23 electric thermocouple
[0025] 31 first heating element
[0026] 32 second heating element
[0027] 321 first radial block
[0028] 33 third heating element
[0029] 331 second radial block
[0030] 40 metal layer DETAILED DESCRIPTION
[0031] The above objects, features and advantages of the present application will become more apparent from the following description referring to the accompanying drawings, in which:
[0032] In the description of the present application, it is to be understood that, unless specifically stated and limited otherwise, the terms "mounting", "connected", "connecting" or "connection" should be interpreted broadly, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be mechanically connected, can be electrically connected; can be directly connected, or indirectly connected through an intermediate medium, or can be the communication between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0033] In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. The relative terms are only used for convenience of description, and do not mean that the device described should be manufactured or operated in a specific orientation, so it should not be understood as a limitation of the present application.
[0034] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be referred to as the second component, region, layer and / or part without departing from some embodiments of the present application.
[0035] As described above, the semiconductor process is usually very sensitive to the temperature uniformity or distribution of the heating plate, and the ideal temperature detection can be achieved by measuring the temperature of the heating plate with the thermocouple under certain conditions (e.g., temperature set point, chamber pressure, gas flow rate, etc.). The control of the heating wire inside the double-drive heating plate adopts a double-drive mode, that is, the currents of the inner and outer heating wires can be controlled separately, and the temperature difference between the inner and outer rings can be controlled.
[0036] In the prior art, the semiconductor process equipment can only test the center temperature by a single thermocouple, and therefore, the single area temperature detection of the double-drive plate does not have sufficient detection capability to accurately detect the temperature distribution. In addition, during the process using the double-drive plate, since the actual temperature of the outer heating plate is unknown, when replacing a new heating plate, the optimal current ratio value of the process data of the actual heating plate is usually confirmed after collecting process data of different current ratios, which increases the time cost and wastes manpower and resources.
[0037] In order to overcome the above-mentioned defects in the prior art, the utility model provides a kind of heater, a kind of semiconductor device's processing equipment, for respectively detecting the temperature of each corresponding area of the plate body, to effectively obtain and control the temperature distribution of each area of heating plate, to improve the preparation efficiency of semiconductor process.
[0038] In some non-limiting embodiments, the heater provided in the first aspect of the utility model can be configured in the semiconductor device processing equipment provided in the second aspect of the utility model. Specifically, the semiconductor device processing equipment includes a process chamber and the heater provided in the first aspect of the utility model. The process chamber is used for thin film deposition process on the device therein.
[0039] For details, please refer to Figure 1 , Figure 1 The structure of the heater provided in some embodiments of the utility model is shown.
[0040] As Figure 1 shown, the heater includes a plate body 10 and a heating unit. The plate body 10 includes a first thermocouple 21 arranged at the first area in the center of the plate body 10 and a second thermocouple 22 arranged at the second area in the periphery of the first area, which can detect the temperature at different positions of the heater plate with multiple points.
[0041] Specifically, the first thermocouple 21 and the second thermocouple 22 are respectively used for detecting the temperature of each corresponding area of the plate body 10. The heating unit is used for heating the first area and the second area respectively. The heating unit is arranged at the lower part of the support structure in the center of the plate body 10.
[0042] Further, in some embodiments, the plate body 10 further includes a third thermocouple 23 arranged at a third area in the periphery of the second area, and the heating unit is further used for heating the third area.
[0043] Referring to Figure 2 , Figure 2 A disc body and an electric thermocouple structure according to some embodiments of the present application are shown in the schematic diagram.
[0044] As Figure 2 shown, specifically, the second electric thermocouple 22 includes at least one first radial block 321, and the second electric thermocouple 22 is connected to the heating unit via the first radial block 321. The third electric thermocouple 23 includes at least one second radial block 331, and the third electric thermocouple 23 is connected to the heating unit via the second radial block 331.
[0045] Further, in some embodiments, the heating unit includes a first heating element 31, a second heating element 32, and a third heating element 33. The first heating element 31 is located in the first region, the second heating element 32 is located in the second region, and the third heating element 33 is located in the third region.
[0046] In some embodiments, the first region is a circular region with the center point of the disc body 10 as the center, the second region is an annular region surrounding the first region, and the third region is an annular region surrounding the second region.
[0047] Further, in some embodiments, the radius of the disc body 10 is 15 cm, the radius range of the first electric thermocouple 21 is 2 cm to 3 cm, the width range of the second electric thermocouple 22 is 4 cm to 6 cm, the width range of the third electric thermocouple 23 is 2.5 cm to 3 cm, the first distance between the first electric thermocouple 21 and the second electric thermocouple 22 is equal to the second distance between the second electric thermocouple 22 and the third electric thermocouple 23, so that the temperature sensing region is uniformly covered on the heating disc disc body 10.
[0048] Referring to Figure 3 , Figure 3 A disc body and an electric thermocouple structure according to some embodiments of the present application are shown in the schematic diagram.
[0049] As Figure 3 shown, the first region is a square region with the center point of the disc body 10 as the origin, the second region is a wave-shaped region surrounding the first region, and the third region is a wave-shaped region surrounding the second region.
[0050] Further, the radius of the disc body 10 is 15 cm, the side length of the first electric thermocouple 21 is 4 cm, the width range of the second electric thermocouple 22 is 4 cm to 5 cm, the width range of the third electric thermocouple 23 is 2.5 cm to 3 cm, the first distance between the first electric thermocouple 21 and the second electric thermocouple 22 is equal to the second distance between the second electric thermocouple 22 and the third electric thermocouple 23, so that the temperature sensing region is uniformly covered on the heating disc disc body 10.
[0051] Those skilled in the art can understand that the embodiments of the structure of the thermocouple are only some non-limiting embodiments provided by the present application, which aims to clearly show the main concept of the present application and provide some specific schemes for the public to implement, rather than to limit the entire structure of the thermocouple.
[0052] Optionally, the thermocouple can also be divided into sawtooth and / or other irregular shapes.
[0053] Please refer to Figure 4 , Figure 4 The cross-sectional structure schematic diagram of the thermocouple provided by some embodiments of the present application is shown.
[0054] As Figure 4 shown, the first thermocouple 21, the second thermocouple 22 and the third thermocouple 23 are provided with a metal layer 40, which is used to shield the signal interference received by the first thermocouple 21, the second thermocouple 22 and the third thermocouple 23 in temperature detection, so as to improve the accuracy of temperature detection.
[0055] Specifically, the interference includes end-to-end interference such as alternating magnetic field, interference introduced by welding the thermocouple on the live body, and impedance voltage interference generated by the thermocouple and the instrument measurement, and / or ground interference such as high-temperature leakage interference, ground current interference, and high-voltage electric field interference.
[0056] In summary, the heater and the processing equipment of the semiconductor device provided by the present application can be used to detect the temperature of each corresponding area of the disc body respectively, so as to effectively obtain and control the temperature distribution of each area of the heating disc, so as to improve the preparation efficiency of the semiconductor process.
[0057] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it will be appreciated and understood that the methods are not limited by the order of acts, as some acts can occur in different orders and / or concurrently with other acts from that shown and described herein or in other acts not shown and described herein, which are made possible as a result of one or more embodiments.
[0058] The foregoing description of the present disclosure has been provided for purposes of enabling any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A heater characterized by, The disc body comprises a first electrical thermocouple arranged in a first region at the center of the disc body, a second electrical thermocouple arranged in a second region at the periphery of the first region, and a third electrical thermocouple arranged in a third region at the periphery of the second region, wherein the first electrical thermocouple, the second electrical thermocouple, and the third electrical thermocouple are respectively used to detect the temperature of the corresponding region of the disc body. A metal layer is arranged outside the first electrical thermocouple, the second electrical thermocouple, and the third electrical thermocouple, and is used to shield the first electrical thermocouple, the second electrical thermocouple, and the third electrical thermocouple from signal interference during temperature detection. A heating unit is arranged at the lower part of the support structure at the center of the disc body, wherein the second electrical thermocouple comprises at least one first radial block, and the second electrical thermocouple is connected to the heating unit via the first radial block. The third electrical thermocouple comprises at least one second radial block, and the third electrical thermocouple is connected to the heating unit via the second radial block. The heating unit comprises a first heating element, a second heating element, and a third heating element, wherein the first heating element is arranged in the first region, the second heating element is arranged in the second region, and the third heating element is arranged in the third region.
2. The heater of claim 1, wherein The first region is a circular region with the center point of the disc body as the center, the second region is an annular region surrounding the first region, and the third region is an annular region surrounding the second region. The radius of the disc body is 15 cm, the radius of the first electrical thermocouple ranges from 2 cm to 3 cm, the width of the second electrical thermocouple ranges from 4 cm to 6 cm, the width of the third electrical thermocouple ranges from 2.5 cm to 3 cm, and the first distance between the first electrical thermocouple and the second electrical thermocouple is equal to the second distance between the second electrical thermocouple and the third electrical thermocouple. The first region is a square region with the center point of the disc body as the origin, the second region is a wavy region surrounding the first region, and the third region is a wavy region surrounding the second region.
3. The heater of claim 2, wherein The radius of the disc body is 15 cm, the side length of the first electrical thermocouple is 4 cm, the width of the second electrical thermocouple ranges from 4 cm to 5 cm, the width of the third electrical thermocouple ranges from 2.5 cm to 3 cm, and the first distance between the first electrical thermocouple and the second electrical thermocouple is equal to the second distance between the second electrical thermocouple and the third electrical thermocouple.
4. The heater of claim 1, wherein The process chamber is used for thin film deposition process on devices therein.
5. The heater of claim 4, wherein The heater according to any one of claims 1-7.
6. The heater of claim 1, wherein 7. The heater of claim 6, wherein 8. A processing apparatus of a semiconductor device, characterized by comprising: