Vapor deposition reaction device

Abstract

The utility model discloses a vapor deposition reaction device. The vapor deposition reaction device comprises a reaction chamber, the base is arranged in the reaction chamber, the base comprises a ventilation area and a placement area, the placement area is arranged around the ventilation area, and the placement area is used for placing a substrate; the gas guide part is arranged in the reaction chamber, the gas guide part is arranged in the circumferential direction of the base, an exhaust part is arranged at the top of the gas guide part, and the exhaust part is communicated with a space between the top surface of the placement area and the inner top surface of the reaction chamber and is used for providing process gas which flows through the placement area and flows towards the ventilation area; the gas supply part is arranged at the bottom of the reaction chamber, is communicated with the gas guide part and is used for providing process gas into the gas guide part; and the gas outlet part is arranged at the bottom of the reaction chamber, is communicated with the ventilation area and is used for discharging the process gas through the ventilation area. According to the utility model, the problem of non-uniform growth of the semiconductor layer can be improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a vapor deposition reaction apparatus. Background Technology

[0002] During the vapor deposition reaction, the substrate is placed on a pedestal, and a heating device is positioned below the pedestal to heat it. The substrate is heated through heat conduction from the pedestal until it reaches the required process temperature. Once the reaction chamber reaches the process pressure, process gas is introduced into the reaction chamber from the side wall and flows through the substrate in a laminar flow manner, depositing a semiconductor layer on the substrate surface.

[0003] In existing technologies, after the process gas enters the reaction chamber, due to the reaction of the gas on the substrate surface and the diffusion properties of the gas, the concentration of the process gas tends to dissipate along the gas inlet direction, thus affecting the uniformity of the semiconductor layer on the substrate. Uneven growth of the semiconductor layer can lead to defects such as crack distribution and dislocation density on the substrate surface during subsequent deposition processes, affecting the quality of the semiconductor layer.

[0004] Therefore, it is necessary to provide a new vapor deposition reaction apparatus to solve the above-mentioned problems existing in the prior art. Utility Model Content

[0005] The purpose of this invention is to provide a vapor deposition reaction apparatus that can form laminar flow on the substrate surface to compensate for the gradual decrease in chemical concentration, thereby improving the problem of uneven growth of semiconductor layers.

[0006] To achieve the above objectives, the technical solution of this utility model is as follows:

[0007] A vapor deposition reaction apparatus includes a reaction chamber;

[0008] A base is disposed inside the reaction chamber. The base includes a ventilation area and a placement area. The placement area is arranged around the ventilation area and is used to place a substrate.

[0009] A gas guide section is disposed in the reaction chamber. The gas guide section is arranged around the base. An exhaust section is provided at the top of the gas guide section. The exhaust section connects the space between the top surface of the placement area and the inner top surface of the reaction chamber, and is used to provide process gas flowing through the placement area and toward the ventilation area.

[0010] A gas supply unit is located at the bottom of the reaction chamber and communicates with the gas guide unit, for supplying process gas to the gas guide unit;

[0011] An exhaust section is located at the bottom of the reaction chamber and communicates with the ventilation area, for discharging process gas through the ventilation area.

[0012] By adopting the above technical solution, the base includes a ventilation area and a placement area, with the placement area surrounding the ventilation area. A gas guide section is provided around the circumference of the base within the reaction chamber. A gas supply section communicating with the gas guide section and a gas outlet section communicating with the ventilation area are located at the bottom of the reaction chamber. The gas supply section provides process gas to the gas guide section, and an exhaust section is located at the top of the gas guide section. The outlet of the exhaust section connects to the space between the top surface of the placement area and the inner top surface of the reaction chamber, providing process gas that flows through the placement area and towards the ventilation area. Therefore, within the reaction chamber, the process gas flows from around the base through the placement area to the ventilation area, and then exits through the exhaust section. During this process, the process gas accumulates as it flows, compensating for the gradually decreasing chemical concentration and improving the problem of uneven semiconductor layer on the substrate caused by the reduced process gas concentration. The gas supply section is located at the bottom of the reaction chamber, extending the gas path and facilitating uniform mixing of the gas during transport, thereby improving film quality.

[0013] Optionally, the gas guiding part includes an annular chamber surrounding the base, the annular chamber communicating with the gas supply part; the exhaust part includes a plurality of first connecting holes formed in the inner wall of the annular chamber, the plurality of first connecting holes being distributed circumferentially along the inner wall of the annular chamber, each of the first connecting holes communicating with the space between the top surface of the placement area and the inner top surface of the reaction chamber, for providing gas flowing toward the ventilation area and flowing through the placement area in a laminar flow manner.

[0014] Optionally, the gas guide includes a plurality of pipes, each pipe being disposed in the reaction chamber and distributed circumferentially around the base, and an exhaust section being disposed at the top of each pipe.

[0015] Optionally, a mixing chamber is provided at the bottom of the reaction chamber, the mixing chamber is connected to each of the pipes, the mixing chamber is connected to the gas supply section, and the mixing chamber is arranged around the gas outlet section.

[0016] Optionally, a plurality of mixing chambers are provided in the bottom of the reaction chamber, the gas supply section is connected to each of the mixing chambers, each of the mixing chambers is connected to at least two of the pipes, and the mixing chambers are arranged around the gas outlet section.

[0017] Optionally, the exhaust section includes a second connecting hole formed on the side wall of the pipe, the second connecting hole connecting the space between the top surface of the placement area and the inner top surface of the reaction chamber; or: the exhaust section includes an internally hollow annular structure, the annular structure having a connecting port, the annular structure connecting the space between the top surface of the placement area and the inner top surface of the reaction chamber through the connecting port; each of the pipes is connected to the interior of the annular structure.

[0018] Optionally, it may also include a side temperature control device provided in the gas guide section to adjust the temperature of the process gas in the gas guide section, which is located in the side wall of the reaction chamber.

[0019] Optionally, a first cooling device is provided in the top of the reaction chamber, and the reaction chamber includes a detachable chamber cover on the top, with the first cooling device located inside the chamber cover.

[0020] Optionally, it also includes a rotary drive device. The base includes a hollow support seat located at the bottom of the reaction chamber. The placement area surrounds the top of the hollow support seat, so that the space inside the hollow support seat connects the base and the reaction chamber. The space inside the hollow support seat is the ventilation area. The rotary drive device is located at the bottom of the reaction chamber in a dynamic sealing manner and is connected to the hollow support seat to drive the base to rotate.

[0021] Optionally, a second cooling device is also included. A heating device is disposed between the base and the bottom of the reaction chamber. The heating device is disposed corresponding to the placement area. The second cooling device is disposed below the heating device and surrounds the hollow support base. Attached Figure Description

[0022] Figure 1 This is a cross-sectional view of the main structure of a vapor deposition reactor according to an embodiment of the present invention;

[0023] Figure 2 This is a schematic diagram showing the placement of a substrate on a support platform in a vapor deposition reactor according to an embodiment of the present invention.

[0024] Figure 3 This invention relates to a vapor deposition reactor equipped with a first cooling device.

[0025] Figure 4 This is a schematic diagram of a vapor deposition reactor equipped with a sidewall temperature control device according to an embodiment of the present invention.

[0026] Figure 5 This is a schematic diagram of the structure of a vapor deposition reactor, including a driving device and a second cooling device, according to an embodiment of the present invention.

[0027] Figure 6 This is a schematic diagram of the structure of an air guide section with a first connecting hole as the exhaust section in Embodiment 1 of this utility model;

[0028] Figure 7 This is a schematic diagram of a gas guide section with an annular exhaust structure in Embodiment 1 of this utility model;

[0029] Figure 8 This is a schematic diagram of a vapor deposition reactor in Embodiment 2 of the present invention, wherein the gas guide part is a pipe and the exhaust part is a second connecting hole.

[0030] Figure 9 This is a schematic diagram showing the assembly relationship between an air guide and an exhaust section in Embodiment 3 of this utility model;

[0031] Figure 10 This is a schematic diagram of a vapor deposition reactor with one-to-one correspondence between the air inlet pipe and the pipeline in Embodiment 4 of this utility model.

[0032] Figure 11 This is a schematic diagram of a vapor deposition reactor in Embodiment 4 of the present invention, in which an air inlet pipe and a mixing chamber are in one-to-one correspondence, and each mixing chamber corresponds to at least two pipes.

[0033] Figure 12 This is a schematic diagram of a vapor deposition reactor in Embodiment 5 of the present invention, wherein each mixing chamber corresponds to at least one air inlet pipe and at least two corresponding pipes.

[0034] Figure label:

[0035] 100, Base; 110, Support platform; 111, Placement area; 1112, Placement slot; 112, Ventilation area; 120, Hollow support base; 200, Reaction chamber; 210, Mixing chamber; 230, Heating device; 240, First cooling device; 250, Drive device; 260, Second cooling device; 270, Side temperature control device; 300, Substrate; 400, Air inlet pipe; 500, Air outlet pipe; 610, Annular chamber; 611, First side wall; 6111, Upper half; 6112, Lower half; 612, Second side wall; 613, Chamber top wall; 614, Chamber bottom wall; 620, Pipe; 710, First connecting hole; 720, Second connecting hole; 730, Annular structure; 731, Connecting port; 740, Annular channel; 800, Chamber cover. Detailed Implementation

[0036] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions in the embodiments of this utility model will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art to which this utility model pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but does not exclude other elements or objects.

[0037] The specific embodiments of this utility model will be further described in detail below with reference to the accompanying drawings.

[0038] This invention provides a vapor deposition reaction apparatus for growing a semiconductor material layer on a substrate. The vapor deposition reaction apparatus can be a chemical vapor deposition (CVD) apparatus or a physical vapor deposition (PVD) apparatus. The chemical vapor deposition apparatus can be a plasma-enhanced chemical vapor deposition (PECVD) apparatus, a metal-organic chemical vapor deposition (MOCVD) apparatus, etc. This embodiment uses an MOCVD apparatus as an example. It should be understood that this apparatus is merely exemplary, and this invention is not limited to this one apparatus.

[0039] Reference Figure 1 and Figure 2 The vapor deposition apparatus includes a reaction chamber 200. A base 100 is disposed inside the reaction chamber 200. In some embodiments, the base 100 may be fixedly disposed inside the reaction chamber 200 or rotatably disposed inside the reaction chamber 200. The base 100 has a ventilation area 112 and a placement area 111, the placement area 111 being used to place a substrate 300.

[0040] Reference Figure 1 and Figure 2The placement area 111 is arranged around the ventilation area 112. In some embodiments, the base 100 includes a support platform 110 and a hollow support base 120, wherein the interior of the hollow support base 120 is hollow, forming the ventilation area 112; the support platform 110 surrounds the top of the hollow support base 120, such that the interior of the hollow support base 120 communicates the space between the base 100 and the reaction chamber 200. The placement area 111 is the top of the support platform 110.

[0041] In some specific embodiments, the support platform 110 and the hollow support base 120 are coaxially arranged and fixed to each other. The fixing method can be bonding, welding, or integral molding, etc.

[0042] Reference Figure 1 and Figure 2 The placement area 111 has multiple placement slots 1112, which are used to place the substrate 300. In some embodiments, the multiple placement slots 1112 are evenly distributed around the circumference of the ventilation area 112.

[0043] In this embodiment, the reaction chamber 200 is provided with a gas guide section. The interior of the gas guide section is hollow and is arranged around the base 100. At the same time, the gas guide section has an exhaust section, which is located at the top of the gas guide section. The exhaust section connects the interior of the gas guide section with the reaction chamber 200, so that the process gas inside the gas guide section can be discharged into the interior of the reaction chamber 200 through the exhaust section.

[0044] The exhaust outlet connects to the space between the top surface of the placement area 111 and the inner top surface of the reaction chamber 200, providing process gas flowing through the placement area 111 and toward the ventilation area 112. In one embodiment, the process gas flows through the placement area 111 in a laminar flow manner. In another embodiment, the exhaust outlet is positioned higher than the end face of the substrate 300, allowing the process gas to exit from the exhaust outlet in a laminar flow manner and flow through each placement area 111. When a substrate is placed in the placement area 111, the temperature of the substrate 100 is controlled to reach the process temperature, and the temperature and pressure within the reaction chamber 200 meet the process requirements. The process gas then performs vapor deposition growth on the exposed surface of the substrate to form a semiconductor material layer.

[0045] A gas supply unit, located at the bottom of the reaction chamber 200 and communicating with the gas guide unit, is used to supply process gas into the gas guide unit. In some embodiments, reference is made to... Figure 1An air inlet pipe 400 is provided at the bottom of the reaction chamber 200 as a gas supply section. The position and number of air inlet pipes 400 can be adjusted according to requirements. Specifically, the air inlet pipe 400 is fixedly installed on the bottom plate of the reaction chamber 200. The fixing method can be welding or bolting, etc., to ensure that the air inlet pipe 400 can communicate with the inside of the gas guiding section, and to avoid disrupting the temperature and pressure environment inside the reaction chamber 200. In this embodiment, the air inlet pipe 400 is fixedly installed on the bottom outer wall of the reaction chamber 200 by bolting. The air inlet pipe 400 communicates with the inside of the gas guiding section, allowing the process gas to enter the gas guiding section through the air inlet pipe 400.

[0046] A gas outlet, located at the bottom of the reaction chamber 200 and communicating with the ventilation area 112, is used to discharge process gases through the ventilation area. In some embodiments, reference is made to... Figure 1 The bottom of the reaction chamber 200 is also fixedly provided with an exhaust pipe 500 as an exhaust section. Specifically, the exhaust pipe 500 is fixedly provided at the bottom of the reaction chamber 200, and its fixing method can be welding or bolt fixing, etc. In this embodiment, the exhaust pipe 500 is fixedly provided at the bottom of the reaction chamber 200 by bolt fixing. During the process, the process gas first enters the gas guide section through the gas inlet pipe 400. The process gas in the gas guide section is transferred to the interior of the reaction chamber 200 through the exhaust section. The process gas moves from the edge of the base 100 towards the interior of the reaction chamber 200. The gas flows through the ventilation area 112 and is discharged through the outlet pipe 500. That is, the process gas in the reaction chamber 200 flows from the periphery of the base 100 towards the center. The gas becomes more and more concentrated as it flows, thereby compensating for the gradual decrease in chemical concentration. This improves the problem of uneven semiconductor layer on the substrate 300 caused by the decrease in process gas concentration. At the same time, the inlet pipe 400 is set at the bottom of the reaction chamber 200, so that the process gas flows axially and then radially into the reaction chamber 200. This extends the gas path and is conducive to uniform mixing of the gas during the transportation process, thereby improving the film quality.

[0047] The reaction chamber 200 includes a removable cover 800 disposed on the top of the reaction chamber 200. In some embodiments, refer to... Figure 3 and Figure 4 The top of the reaction chamber 200 is detachably equipped with a chamber cover 800. Specifically, the detachable method can be snap-fit, fastening, or bolt fixing, to ensure that the chamber cover 800 can seal the top of the reaction chamber 200. During the installation process, different detachable connection methods can be selected according to the requirements.

[0048] A heating device 230 is disposed below the base 100, specifically between the base 100 and the bottom of the reaction chamber 200, and is correspondingly disposed in the placement area 111. Its placement and implementation are conventional techniques in the art; for example, it could be a resistance heating device or a radio frequency heating device. The heating device 230 generates heat, which is conducted to the substrate 300 through the base 100, thereby heating the substrate 300 to meet the process temperature requirements.

[0049] A first cooling device 240 is disposed within the top of the reaction chamber 200. In some embodiments, the first cooling device 240 is disposed on the top wall of the reaction chamber 200 to assist in regulating the temperature of the process gas, ensuring that the process gas meets the requirements of the deposition reaction as it flows through the substrate 300. Specifically, the first cooling device 240 is a cooling coil disposed within the top wall of the reaction chamber 200, spirally wound radially within the reaction chamber. In some embodiments, the first cooling device 240 is disposed within the chamber cover 800.

[0050] The vapor deposition reactor also includes a side temperature control device 270 surrounding the gas guide section to regulate the temperature of the gas within the gas guide section. The side temperature control device 270 assists in regulating the temperature of the process gas, ensuring that the process gas reaches a temperature sufficient for the deposition reaction as it flows through the substrate 300, thanks to the action of the side temperature control device 270. In some embodiments, the side temperature control device 270 is located on the outer wall of the gas guide section, or it is wound around the gas guide section along the axial direction of the reaction chamber 200. In some embodiments, the side temperature control device 270 is located within the side wall of the reaction chamber 200, and the gas guide section is also located within the side wall of the reaction chamber 200, reducing or avoiding the influence of the side temperature control device 270 on the environment within the reaction chamber 200. In some embodiments, the side temperature control device 270 is a cooling coil. Gas or liquid can be introduced into the cooling coil; that is, the cooling method can be water cooling or gas cooling, and there is no limitation here. In some embodiments... The side temperature control device 270 is a resistance wire heating device.

[0051] Reference Figure 1 and Figure 5 The reaction chamber 200 is also equipped with a rotary drive device 250, which is used to drive the base 100 to rotate, thereby dragging and mixing the laminar flow flowing through the substrate 300, which is beneficial to further mixing of the components of the process gas on the surface of the substrate 300 and to improving the uniformity of film formation.

[0052] In some embodiments, the rotary drive device 250 is dynamically sealed on the bottom plate of the reaction chamber 200 and connected to the hollow support base 120. When the rotary drive device 250 is activated, it can drive the hollow support base 120 to rotate, thereby driving the support platform 110 to rotate. The arrangement of the rotary drive device 250 at the bottom of the reaction chamber 200 is necessary to drive the base 100 to rotate without affecting the internal environment of the reaction chamber 200, such as the stability of pressure and temperature. In some specific embodiments, the rotary drive device 250 is a magnetohydrodynamic sealed rotary device, and its specific implementation and its specific arrangement with the bottom of the reaction chamber are conventional techniques in the art.

[0053] Heat is generated during the rotation of the base 100 by the rotary drive device 250 via the hollow support 120, especially at high speeds. This rotational heat affects the temperature of both the base 100 and the substrate 300. (Refer to...) Figure 1 and Figure 5 The reaction chamber 200 is further equipped with a second cooling device 260, located below the heating device 230 and surrounding the hollow support base 120. Its cooling method can be air cooling or water cooling, which is not limited here. In some embodiments, the second cooling device 260 is disposed in the area enclosed by the heating device 230, the air guide, the hollow support base 120, and the bottom wall of the reaction chamber 200.

[0054] The various implementations of the air guide section are described in detail through the following specific embodiments, for example:

[0055] Example 1,

[0056] In this embodiment, refer to Figure 1 , Figure 6 and Figure 7The gas guiding part is an annular chamber 610, which can be an annular chamber 610 located between the inner wall of the reaction chamber 200 and the base 100, or it can be a cavity provided in the side wall of the reaction chamber 200, thereby forming an annular chamber 610. In this embodiment, the gas guide is selected as an independent annular chamber 610 surrounding the base 100. Specifically, the annular chamber 610 has a first sidewall 611, a second sidewall 612, a top wall 613, and a bottom wall 614. The first sidewall 611 is the inner sidewall of the annular chamber 610, which can be in contact with the edge of the support platform 110 or have a certain gap with the edge of the support platform 110 so as not to affect the movement of the support platform 110 (e.g., rotation driven by a rotary drive device). In this embodiment, the first sidewall 611 is selected to have a certain gap with the edge of the support platform 110. The second sidewall 612 is the outer wall of the annular chamber 610, which can be in contact with the inner sidewall of the reaction chamber 200 or have a certain gap with the inner sidewall of the reaction chamber 200. In this embodiment, the second sidewall 612 is fitted to the inner sidewall of the annular chamber 610; the top wall 613 of the chamber is the top wall of the annular chamber 610, which can be fitted to the inner top of the reaction chamber 200 or have a certain gap with the inner top of the reaction chamber 200. In this embodiment, the top wall 613 of the chamber is fitted to the inner top of the reaction chamber 200; the bottom wall 614 of the chamber is the bottom wall of the annular chamber 610, which can be fitted to the inner bottom of the reaction chamber 200 or have a certain gap with the inner bottom of the reaction chamber 200. In this embodiment, the bottom wall 614 of the chamber is fitted to the inner bottom of the reaction chamber 200. The first sidewall 611, the second sidewall 612, the top wall 613 of the chamber, and the bottom wall 614 of the chamber form a cavity for the passage of process gas.

[0057] In this embodiment, the exhaust section can be a plurality of first connecting holes 710 formed on the first sidewall 611, that is, the exhaust section includes a plurality of first connecting holes 710 formed on the inner wall of the annular chamber 610, or it can include a whole annular channel 740 formed on the first sidewall 611; when the exhaust section includes a plurality of first connecting holes 710 formed on the inner wall of the annular chamber 610, the plurality of first connecting holes 710 are circumferentially spaced along the inner sidewall of the annular chamber 610, that is, they are spaced apart on the first sidewall 611, and at the same time, the plurality of first connecting holes 710 are evenly distributed on the first sidewall 611, and the first connecting holes 710 penetrate the first sidewall 611 radially along the annular chamber 610, so that the reaction chamber 2 The exhaust section is connected to the cavity inside the annular chamber 610, or when the gas guide is located inside the side wall of the reaction chamber 200, the exhaust section also includes side wall connecting pipes connecting the inner side wall of the reaction chamber 200 and each of the first connecting holes 710, or the first side wall 611 is the inner side wall of the reaction chamber 200, so that the process gas inside the annular chamber 610 can enter the reaction chamber 200; when the exhaust section is a whole annular channel 740 opened on the first side wall 611, the first side wall 611 is divided into an upper half 6111 and a lower half 6112, wherein there is a gap between the upper half 6111 and the lower half 6112, and the space between the upper half 6111 and the lower half 6112 is the annular channel. 740, the gas in the annular chamber 610 can enter the reaction chamber 200 through the annular channel 740, or when the gas guide is located inside the side wall of the reaction chamber 200, the exhaust part also includes a connecting pipe connecting the inner side wall of the reaction chamber 200 and the side wall of the annular channel 740, or the first side wall 611 is the inner side wall of the reaction chamber 200, so that the gas in the annular chamber 610 can enter the reaction chamber 200; in this embodiment, the exhaust part is selected as a plurality of first connecting holes 710 opened in the inner wall of the annular chamber 610, each of the first connecting holes 710 connecting the space between the top surface of the placement area 111 and the inner top surface of the reaction chamber 200, for providing airflow towards the ventilation area 1 12. Gas flows through the placement area 111 in a laminar flow manner; in addition, since the gas guide is an annular chamber 610, one or more inlet pipes 400 can be set. When multiple inlet pipes 400 are set, different process gases can be introduced into different inlet pipes 400. The process gases are mixed in the annular chamber 610 and enter the reaction chamber 200 through the exhaust section. With this scheme, the amount of different types of process gases can be accurately metered and controlled by each inlet pipe 400. Then, they are mixed in the annular chamber 610 and then transported into the reaction chamber 200. This is especially suitable for application scenarios that allow different types of process gases to be mixed and enter the reaction chamber 200.In this embodiment, an air inlet pipe 400 is selected. In the working state, the process gas enters the annular chamber 610 through the air inlet pipe 400 and enters the reaction chamber 200 through the first connecting hole 710. The process gas flows from the edge of the base 100 toward the ventilation area 112 inside the reaction chamber 200 and is discharged through the air outlet pipe 500. During this process, the process gas moves from the periphery of the base 100 toward the center in the reaction chamber 200. The gas becomes more and more concentrated as it flows, thereby compensating for the gradual decrease in chemical concentration and improving the problem of uneven semiconductor layer on the substrate 300 caused by the decrease in process gas concentration.

[0058] Example 2,

[0059] In this embodiment, refer to Figure 8 The gas guiding part is a pipe 620, and multiple pipes 620 are provided. These multiple pipes 620 are distributed circumferentially around the base 100 within the reaction chamber 200. The process gas enters into each pipe 620 through the inlet pipe 400 and is discharged into the reaction chamber 200 through the exhaust section provided in the pipe 620. Multiple pipes 620 are provided to introduce process gas respectively. Gas equalization devices can be installed in the pipes 620 as needed to ensure uniform mixing of the process gas.

[0060] In this embodiment, one or more intake pipes 400 can be provided; one mixing chamber 210 is provided.

[0061] When there is one inlet pipe 400, the bottom wall of the reaction chamber 200 is provided with a mixing chamber 210 surrounding the outlet. The mixing chamber 210 can be annular or circular. In this embodiment, the mixing chamber 210 is annular and is connected to multiple pipes 620. At the same time, the mixing chamber 210 is connected to the inlet pipe 400. In the working state, the process gas enters the mixing chamber 210 through the inlet pipe 400, and then enters the interior of different pipes 620 after passing through the mixing chamber 210. The process gas inside the pipes 620 enters the reaction chamber 200 through the exhaust section.

[0062] When multiple air inlet pipes 400 are provided, all multiple air inlet pipes 400 are fixedly installed at the bottom of the reaction chamber 200, and all multiple air inlet pipes 400 are connected to the mixing chamber 210. In the working state, the same or different types of process gas can be introduced into different air inlet pipes 400 as needed. The process gas can be mixed in the mixing chamber 210. The mixed process gas enters the pipe 620 and enters the reaction chamber 200 through the exhaust section to participate in the reaction.

[0063] In this embodiment, the exhaust section is a second connecting hole 720 formed on the side wall of the pipe 620. The second connecting hole 720 connects the space between the top surface of the placement area 111 and the inner top surface of the reaction chamber 200. The second connecting hole 720 penetrates the side wall of the pipe 620, making the pipe 620 connected to the inside of the reaction chamber. In the working state, the process gas enters the inside of the reaction chamber 200 through the second exhaust hole on the side wall of the pipe 620 and participates in the reaction process.

[0064] Example 3,

[0065] The difference between Embodiment 3 and Embodiment 2 of this application is that, referring to... Figure 8 and Figure 9 The exhaust section is an internally hollow annular structure 730 with a cavity inside. The inner wall of the annular structure 730 has a connecting port 731, which separates the inner wall of the annular structure 730. Multiple pipes 620 are connected to the interior of the annular structure 730. During operation, the process gas in the pipes 620 enters the cavity of the annular structure 730 and then enters the reaction chamber 200 through the connecting port 731 to participate in the reaction process.

[0066] Example 4,

[0067] Reference Figure 10 and Figure 11 In this embodiment, multiple air inlet pipes 400 are provided. The number of air inlet pipes 400 can be the same as or different from the number of pipes 620. Multiple mixing chambers 210 are provided, which can perform fine control on each process gas entering the reaction chamber 200 according to process requirements, such as flow rate control and flow volume control. It can also be applied to application scenarios where different types of process gases that can react with each other are prone to pre-reaction in the gas guide section. Different types of process gases that can react with each other enter the reaction chamber 200 through different pipes 620 to avoid pre-reaction in the gas guide section.

[0068] When the number of inlet pipes 400 is the same as the number of pipes 620, multiple inlet pipes 400 correspond one-to-one with multiple pipes 620. This means that the bottom wall of the reaction chamber 200 has multiple mixing chambers 210, the number of which is the same as the number of pipes 620. Each group of inlet pipes 400 and pipes 620 has one mixing chamber 210 between them; that is, each inlet pipe 400 corresponds to one pipe 620 and one mixing chamber 210, and the inlet pipes 400 and 620 are connected through the mixing chambers 210. Since each inlet pipe 400 corresponds to one pipe 620 and one mixing chamber 210, it can also be understood that the inlet pipe 400 is directly connected to the pipe 600. In operation, the process gas enters the corresponding pipe 620 through the inlet pipe 400 and then enters the reaction chamber 200 through the exhaust section.

[0069] When the number of air pipes differs from the number of pipes 620, the number of air inlet pipes 400 can be greater than 1 but less than the number of sidewall air inlet pipes 400. The bottom wall of the reaction chamber 200 has multiple mixing chambers 210, with each air inlet pipe 400 corresponding to one mixing chamber 210. Each mixing chamber 210 is connected to at least two pipes 620; that is, each air inlet pipe 400 corresponds to at least two pipes 620 and at least one mixing chamber 210. In some embodiments, some air inlet pipes 400 may correspond to one pipe 620 and one mixing chamber 210. The inlet pipe 400 corresponds to at least two pipes 620 and a mixing chamber 210 simultaneously. During operation, the process gas enters the mixing chamber 210 through the inlet pipe 400. It can be used for reaction bodies where the process gas cannot be premixed or some process gases cannot be premixed. After passing through the mixing chamber 210, the process gas enters the pipe 620 and then enters the reaction chamber 200. In the reaction chamber 200, it flows from the edge of the base 100 toward the ventilation area 112 and is discharged through the outlet pipe 500, forming a laminar flow through the substrate 300.

[0070] In this embodiment, the exhaust section is a second connecting hole 720 formed on the side wall of the pipe 620. The second connecting hole 720 connects the space between the top surface of the placement area 111 and the inner top surface of the reaction chamber 200. The second connecting hole 720 penetrates the side wall of the pipe 620, making the pipe 620 connected to the inside of the reaction chamber. In the working state, the process gas enters the inside of the reaction chamber 200 through the second exhaust hole on the side wall of the pipe 620 and participates in the reaction process.

[0071] Example 5,

[0072] The difference between Embodiment 5 and Embodiment 4 of this application is that, referring to... Figure 12Each mixing chamber 210 is connected to at least one air inlet pipe 400. In actual use, one mixing chamber 210 can be connected to multiple air inlet pipes 400 as needed, so that the premixable process gas can be mixed evenly in the mixing chamber 210.

[0073] Example 6,

[0074] The difference between Embodiment 6 and Embodiment 4 of this application is that, referring to... Figure 9 The exhaust section is an annular structure 730 with an internal cavity. The inner wall of the annular structure 730 has a connecting port 731, which separates the inner wall of the annular structure 730. Multiple pipes 620 are connected to the internal cavity of the annular structure 730. During operation, the process gas in the pipes 620 enters the cavity of the annular structure 730 and enters the reaction chamber 200 through the connecting port 731 to participate in the reaction process.

[0075] The implementation principle of the vapor deposition reaction apparatus in the various embodiments of this application is as follows: the process gas enters the gas guide section from the bottom of the reaction chamber 200 through the gas inlet pipe 400, and then enters the interior of the reaction chamber 200 through the exhaust section provided in the gas guide section. In the reaction chamber 200, the gas flows from the edge of the base 100 toward the center. The gas accumulates as it flows, thereby compensating for the gradual decrease in chemical concentration. Since the gas inlet pipe 400 is located at the bottom of the bottom reaction chamber 200, the process gas flows axially and then radially into the chamber. Compared with the process gas entering the chamber radially by being located on the side wall, the gas path is extended, which is beneficial for the gas to be mixed evenly during the transportation process to improve the film quality.

[0076] Although the embodiments of this utility model have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of this utility model as described in the claims. Moreover, the utility model described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A vapor deposition reactor, characterized in that, Includes a reaction chamber (200); A base (100) is disposed inside the reaction chamber (200). The base (100) includes a ventilation area (112) and a placement area (111). The placement area (111) is disposed around the ventilation area (112) and is used to place a substrate (300). A gas guide is provided in the reaction chamber (200). The gas guide is arranged circumferentially around the base (100). An exhaust section is provided at the top of the gas guide. The exhaust section connects the space between the top surface of the placement area (111) and the inner top surface of the reaction chamber (200) and is used to provide process gas flowing through the placement area (111) and toward the ventilation area (112). A gas supply unit is located at the bottom of the reaction chamber (200) and communicates with the gas guide unit, for supplying process gas to the gas guide unit; An exhaust section is located at the bottom of the reaction chamber (200) and communicates with the ventilation area (112) for discharging process gas through the ventilation area (112).

2. The vapor deposition reactor according to claim 1, characterized in that, The air guide includes an annular chamber (610) surrounding the base (100), and the annular chamber (610) is connected to the air supply section; The exhaust section includes a plurality of first connecting holes (710) formed on the inner wall of the annular chamber (610). The plurality of first connecting holes (710) are distributed circumferentially along the inner wall of the annular chamber (610). Each first connecting hole (710) connects the space between the top surface of the placement area (111) and the inner top surface of the reaction chamber (200) to provide gas flowing toward the ventilation area (112) and flowing through the placement area (111) in a laminar flow manner.

3. The vapor deposition reactor according to claim 1, characterized in that, The gas guiding section includes a plurality of pipes (620), each of the pipes (620) being disposed in the reaction chamber (200) and distributed circumferentially around the base (100), and the exhaust section being disposed at the top of each of the pipes (620).

4. The vapor deposition reactor according to claim 3, characterized in that, The bottom of the reaction chamber (200) is provided with a mixing chamber (210), which is connected to each of the pipes (620) and the gas supply section. The mixing chamber (210) is arranged around the gas outlet section.

5. The vapor deposition reactor according to claim 3, characterized in that, The bottom of the reaction chamber (200) is provided with a plurality of mixing chambers (210), the gas supply section is connected to each of the mixing chambers (210), each of the mixing chambers (210) is connected to at least two of the pipes (620), and each of the mixing chambers (210) is arranged around the gas outlet section.

6. The vapor deposition reactor according to claim 3, characterized in that, The exhaust section includes a second connecting hole (720) formed in the side wall of the pipe (620), the second connecting hole (720) connecting the space between the top surface of the placement area (111) and the inner top surface of the reaction chamber (200), or: The exhaust section includes an internally hollow annular structure (730), the annular structure (730) having a connecting port (731), the annular structure (730) connecting the space between the top surface of the placement area (111) and the inner top surface of the reaction chamber (200) through the connecting port (731); each of the pipes (620) is connected to the interior of the annular structure (730).

7. The vapor deposition reactor according to claim 1, characterized in that, It also includes a side temperature control device (270) provided in the gas guide section to adjust the temperature of the process gas in the gas guide section, which is located in the side wall of the reaction chamber.

8. The vapor deposition reactor according to claim 1, characterized in that, The reaction chamber (200) is provided with a first cooling device (240) at the top. The reaction chamber (200) includes a detachable chamber cover (800) at the top. The first cooling device (240) is located inside the chamber cover (800).

9. The vapor deposition reactor according to claim 1, characterized in that, It also includes a rotary drive device (250). The base (100) includes a hollow support (120) located at the bottom of the reaction chamber (200). The placement area (111) surrounds the top of the hollow support (120) so that the space inside the hollow support (120) connects the base (100) and the reaction chamber (200). The hollow support (120) contains the ventilation area (112). The rotary drive device (250) is located at the bottom of the reaction chamber (200) in a dynamic sealing manner and is connected to the hollow support to drive the base (100) to rotate.

10. The vapor deposition reactor according to claim 9, characterized in that, It also includes a second cooling device (260), and a heating device (230) is provided between the base (100) and the bottom of the reaction chamber (200). The heating device (230) is provided corresponding to the placement area (111). The second cooling device (260) is located below the heating device (230) and surrounds the hollow support base.

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